JPS61176121A - Vacuum processing device utilizing sheet plasma - Google Patents
Vacuum processing device utilizing sheet plasmaInfo
- Publication number
- JPS61176121A JPS61176121A JP1535185A JP1535185A JPS61176121A JP S61176121 A JPS61176121 A JP S61176121A JP 1535185 A JP1535185 A JP 1535185A JP 1535185 A JP1535185 A JP 1535185A JP S61176121 A JPS61176121 A JP S61176121A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sheet plasma
- plasma
- electric field
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、シートプラズマを利用した例えばＣＶＤ装置
やエツチング装置のような真空プ四セス装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a vacuum processing apparatus such as a CVD apparatus or an etching apparatus that utilizes sheet plasma.
従来の技術
シートプラズマに関して、例えば簡単には永久磁石を利
用して磁場中の放電で作られたプラズマを圧縮および伸
長して所望の幅、厚さおよび密度をもつシートプラズマ
を形成する技術は従来公知である。そしてこのようなシ
ートプラズマを利用して！ｆｃ展を行なう技術も従来提
案されている。その−例として％開開ｚｙ−ｒｒｒｘｏ
号公報に開示された化合物半導体薄膜製造装置を挙ける
ことができ、この装置においては、五族成分元素を含ん
だシートプラズマを形成する手段とこのシートプラズマ
を通過して他方の成分元素の分子線を基板へ注入する手
段とが設けられ、シートプラズマから一方の成分元素の
イオンを引き出して他方の成分元素の分子線と共に基板
へ注入するように構成されている。これにより付着確率
の低い成分元素をシートプラズマにのせて基板表面の近
傍から注入し、空間電荷による拡がシの影響を受ける前
に基板へ入るので低速大密変のイオン注入が可能となる
と共に付着確率の低い元素蒸気で成！３ｉ！を汚染する
ことがないなどの作用効果ｔ−あけている。Conventional technology Regarding sheet plasma, for example, there is a conventional technology that simply utilizes a permanent magnet to compress and expand the plasma created by electric discharge in a magnetic field to form a sheet plasma with a desired width, thickness, and density. It is publicly known. And using sheet plasma like this! Techniques for conducting FC exhibitions have also been proposed in the past. For example, %openingzy-rrrxo
An example of this is the compound semiconductor thin film production apparatus disclosed in the above publication, which includes a means for forming a sheet plasma containing a group V element, and a means for forming a sheet plasma containing a group V element, and molecules of the other element passing through the sheet plasma. Means for implanting a beam into the substrate is provided and configured to extract ions of one component element from the sheet plasma and implant them into the substrate together with a molecular beam of the other component element. This allows component elements with low adhesion probability to be implanted from near the substrate surface using sheet plasma, and enters the substrate before being affected by space charge spread, making it possible to perform low-speed, high-density ion implantation. Made with elemental vapor with low adhesion probability! 3i! The effect is that it does not contaminate the air.
発明が解決しようとする問題点
このような従来のシートプラズマを利用した真空プロセ
ス装置は成膜装置にすぎない。ところで、一般に薄膜技
術においては単に成膜だけでなくエツチング処ｆｉ勢が
伴なうのが普通であシ、そのため上述のような装置を含
めて従来の装置では異なったプロセス工程毎に装置を用
意する必要があシ、その結果インライン方式等に応用し
た場合装置自体が大規模、大型となる。Problems to be Solved by the Invention Such a conventional vacuum process apparatus using sheet plasma is nothing more than a film forming apparatus. By the way, in general, thin film technology involves not only film formation but also etching processing, so conventional equipment, including the equipment mentioned above, requires equipment for each different process step. As a result, when applied to an in-line method or the like, the device itself becomes large-scale and large-scale.
そこで本発明の目的は、シートプラズマを利用した真空
プロセス装置において同−処理室内で異なるプロセス工
程を選択的に実施できるようにすることにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to enable a vacuum process apparatus using sheet plasma to selectively perform different process steps within the same processing chamber.
問題点を解決する友めの手段
上記の目的を達成するために、本発明によるシートプラ
ズマを利用した真空プロセス装置は、基板に平行にしか
もそれに近接して基板表面の実質的部分を覆う幅をもち
処理に用いる成分元素を含む化学的に活性なガスまたは
蒸気によって形成されたシートプラズマを発生する装置
と、シートプラズマと基板との間に制御電界を加え名制
御装置と金有し、基板の処理プロセスに応じて必要な励
起活性ビームを基板へ注入できるようにしたことを特徴
としている。Companion Means for Solving the Problems In order to achieve the above objects, a sheet plasma-based vacuum processing apparatus according to the present invention has a width parallel to and in close proximity to the substrate that covers a substantial portion of the substrate surface. A device that generates sheet plasma formed by chemically active gas or vapor containing component elements used in mochi processing, and a control device that applies a control electric field between the sheet plasma and the substrate, It is characterized by being able to inject the necessary excitation active beam into the substrate depending on the treatment process.
作用
このように構成した本発明によるシートプラズマ全利用
した真空プロセス＃ｃｋにおいては、シートプラズマは
化学的に活性なガスまたは蒸気に１って形成され、形成
されたシートプラズマ内で励起された活性粒子（原子お
よび分子）が基板へ到達することによって成膜が行なわ
れる。また励起された活性粒子はシートプラズマからの
拡散によって補給され、シートプラズマ自体は基板を直
接衝撃しないようにされる。Function: In the vacuum process #ck that fully utilizes sheet plasma according to the present invention configured as described above, sheet plasma is formed by chemically active gas or vapor, and activated active gases excited within the formed sheet plasma are formed by chemically active gas or vapor. Film formation occurs when particles (atoms and molecules) reach the substrate. Further, the excited active particles are replenished by diffusion from the sheet plasma, and the sheet plasma itself is prevented from directly impacting the substrate.
シートプラズマと基板との間に自然に存在するプラズマ
ポテンシャルによって励起活性粒子以外にも低エネルギ
のイオンが生°成されるが、シートプラズマと基板との
間に設けた制御装置による制御電界によって基板へその
ようなイオンが入るのを阻止したシ或いは逆に基板へ入
るイオンを加速させ′ｆｃ＋：＞し、それによって、同
−処理屋内、で成膜処理やエツチング処理を任意に選択
して行なうことができる。In addition to excited active particles, low-energy ions are generated due to the plasma potential that naturally exists between the sheet plasma and the substrate. By blocking such ions from entering the substrate, or conversely by accelerating ions entering the substrate, a film forming process or an etching process can be arbitrarily selected within the same processing room. be able to.
実施例
以下６、本発明を、添附図面を参照して一実施例につい
て説明する。EXAMPLE 6 Below, the present invention will be described by way of example 6 with reference to the accompanying drawings.
図面には本発明による装置の構成を原理的に示し、ｌは
図示してない真空処理室内に配置される処理すべき基板
で、図示してない加熱装置で加熱され侍、そして静止状
態または回転成いは並進運動状態に保持され得る。なお
図示実施例では一つの基板ｌたけが示されているが処理
すべき基板によっては当然複数個の基板を同時に処理す
るようにしてもよい。The drawing shows the principle of the structure of the apparatus according to the present invention, where l is a substrate to be processed placed in a vacuum processing chamber (not shown), a substrate is heated by a heating device (not shown), and a substrate is placed in a stationary or rotating state. The structure can be held in translation. Although only one substrate is shown in the illustrated embodiment, it is of course possible to process a plurality of substrates at the same time depending on the substrate to be processed.
２はシートプラズマ形成装置で、この装置はシートプラ
ズマ発生部３と、このシートプラズマ発生部３から発生
された点線で略示するシートプラズマ弘を受けるシート
プラズマ受入部！とから成っている。シートプラズマ弘
は化学的に活性なガスまたは蒸気によって形成され、そ
して処理すべき基板の大きさに合わせて適宜寸法決めさ
れ得る。Reference numeral 2 denotes a sheet plasma forming apparatus, which includes a sheet plasma generating section 3 and a sheet plasma receiving section that receives the sheet plasma generated from the sheet plasma generating section 3 and shown schematically by the dotted line. It consists of. The sheet plasma is formed by a chemically active gas or vapor and can be sized appropriately to the size of the substrate to be processed.
また図示したようにシートプラズマ弘は基板ｌの表面に
平行にしかもその近くに位置して形成され、シートプラ
ズマ参の境界と基板ｌとの距離は例えｔｆ ２ ＷＭ〜
ＪＯ，程度に設定され得る。Further, as shown in the figure, the sheet plasma layer is formed parallel to and near the surface of the substrate 1, and the distance between the boundary of the sheet plasma layer and the substrate 1 is, for example, tf 2 WM ~
JO, may be set to about.
ブロックｔは、基板ｌとシートプラズマ参との間に処理
プロセス（例えば成膜プロセスやエツチングプロセス）
に応じて必要な制御電界を加える制御装置であシ、シー
トプラズマ弘と基板ｌとの間に存在するプラズマポテン
シャルによって励起活性粒子以外に基板ｌへ入る低エネ
ルギーのイオンを制御する。すなわち、制御装置ｔは、
そのようなイオンが基板ｌに入るのを妨けたい場合には
シートプラズマ参と基板ｌとの間に低速イオンを阻止す
るための電界を加え、またイオンを加速させるような電
界をシートプラズマ参と基板ｌとの間に加えることがで
きる。Block t is a processing process (for example, a film forming process or an etching process) between the substrate l and the sheet plasma reference material.
A control device applies a necessary control electric field according to the plasma potential, and controls low-energy ions entering the substrate 1 in addition to excited active particles by the plasma potential existing between the sheet plasma and the substrate 1. That is, the control device t is
If it is desired to prevent such ions from entering the substrate l, an electric field is applied between the sheet plasma sample and the substrate l to block slow ions, and an electric field that accelerates the ions is applied to the sheet plasma sample. It can be added between the substrate l.
図示実施例で説明してきたように本発明においては活性
ガスまたは蒸気のシートプラズマだけでもよいが、場合
によっては他の分子線がシートプラズマ弘を横切るよう
にすることもでき、さらにシートプラズマの活性ガスの
他に処理室内に他のガスを導入して基板／の表面で励起
活性粒子と化学反応させるようにしてもよい。As explained in the illustrated embodiments, in the present invention, only a sheet plasma of active gas or vapor may be used, but in some cases, other molecular beams may be used to cross the sheet plasma, and the sheet plasma may be activated. In addition to the gas, other gases may be introduced into the processing chamber to cause a chemical reaction with the excited active particles on the surface of the substrate.
効果
以上説明してきたように、本発明によれはシートプラズ
マ・會オＵ用した励起ビームによる成膜プロセスだけで
なくシートプラズマと基板との間に加える外部電界ｔ−
１１Ｊ＃することによってイオンを基板へ加速して入れ
たり阻止して入れなかつ皮すさせることで同一処理室内
で成膜プロセスとエツチングプロセスとを選択的にする
ことができる。Effects As explained above, according to the present invention, not only the film formation process using an excitation beam using a sheet plasma and an external electric field t- applied between the sheet plasma and the substrate can be performed.
11J# allows ions to be accelerated into the substrate or blocked so that they do not enter the substrate and cause them to evaporate, thereby making it possible to selectively perform the film forming process and the etching process within the same processing chamber.
図面は本発明による真空プロセス装置の構成を示すブロ
ック線図である。
図中、ｌ：基板、コニシートプラズマ発生装置、４ｃ：
シートプラズマ、ｔ：制御装置。The drawing is a block diagram showing the configuration of a vacuum process apparatus according to the present invention. In the figure, l: substrate, Konisheet plasma generator, 4c:
Sheet plasma, t: control device.
Claims (1)
部分を覆う幅をもち処理に用いる成分元素を含む化学的
に活性なガスまたは蒸気によつて形成されたシートプラ
ズマを発生する装置と、シートプラズマと基板との間に
基板の処理プロセスに応じた制御電界を加える制御装置
とを有し、基板の処理プロセスに従つて必要な励起活性
ビームを基板へ注入できるようにしたことを特徴とする
シートプラズマを利用した真空プロセス装置。an apparatus for generating a sheet plasma formed by a chemically active gas or vapor parallel to and in close proximity to the substrate and having a width covering a substantial portion of the substrate surface and containing component elements used in the process; It is characterized by having a control device that applies a control electric field between the sheet plasma and the substrate according to the substrate processing process, so that the necessary excitation active beam can be injected into the substrate according to the substrate processing process. Vacuum process equipment that uses sheet plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1535185A JPS61176121A (en) | 1985-01-31 | 1985-01-31 | Vacuum processing device utilizing sheet plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1535185A JPS61176121A (en) | 1985-01-31 | 1985-01-31 | Vacuum processing device utilizing sheet plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61176121A true JPS61176121A (en) | 1986-08-07 |
Family
ID=11886372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1535185A Pending JPS61176121A (en) | 1985-01-31 | 1985-01-31 | Vacuum processing device utilizing sheet plasma |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61176121A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988820A (en) * | 1982-11-15 | 1984-05-22 | Ulvac Corp | Compound semiconductor thin film manufacturing device utilizing sheet plasma |
-
1985
- 1985-01-31 JP JP1535185A patent/JPS61176121A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988820A (en) * | 1982-11-15 | 1984-05-22 | Ulvac Corp | Compound semiconductor thin film manufacturing device utilizing sheet plasma |
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