JPS6116523A - Less damage ion beam etching process of silicon - Google Patents
Less damage ion beam etching process of siliconInfo
- Publication number
- JPS6116523A JPS6116523A JP13761784A JP13761784A JPS6116523A JP S6116523 A JPS6116523 A JP S6116523A JP 13761784 A JP13761784 A JP 13761784A JP 13761784 A JP13761784 A JP 13761784A JP S6116523 A JPS6116523 A JP S6116523A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- ion beam
- chlorine
- pressure
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 96
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 31
- 229910052801 chlorine Inorganic materials 0.000 abstract description 31
- 239000000460 chlorine Substances 0.000 abstract description 31
- 238000007796 conventional method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 241000981595 Zoysia japonica Species 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、電子デバイス製造プロセスに用いる、Ｓｉの
イオンビームエツチング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for ion beam etching of Si, which is used in an electronic device manufacturing process.
（従来技術とその問題点） 従来のＳｉのイオンビームエツチング装置として。(Prior art and its problems) As a conventional Si ion beam etching device.
は、イオン源よシ真空中にイオンビームを引き出し、こ
れを真空中または活性ガス雰囲気中で一定時間Ｓｉに照
射することによってエツチングを行う装置が知られてい
る。（Ｈ，Ｒ，Ｋａｕｆ ｆｍａｎｎ、 ジャーナル
・オブ・バキユーム・サイエンス・テクノロジ（Ｊ＊Ｖ
ａｃ、Ｓｃｉ、Ｔｅｃｈｎｏｌ。１６巻１９７９年１７
９ページ））。このような装置においては、真空中にお
いてイオンビーＡによるエツチングを行う場合にはエツ
チングレイトが遅く、まだ塩素などの活性ガス雰囲気中
でイオンビームによるエツチングを行う場合にはエツチ
ングレイトは増加するがイオン衝撃及び活性ガス分子吸
着の相乗効果によるダメージがｓｉ表面上に形成される
という欠点があったＯ
従来のイオンビームエツチング方法によるエツチング時
間及びエツチング後の表面に誘起した０８Ｆ（Ｏｘｃｉ
ｄａｔｉｏｎ Ｉｎｄｕｃｅｄ Ｓｔａｃｋｉｎｇ Ｆ
ａｕｌｔ）の顕微鏡写真（約３００倍）を、第４図（ｂ
ａｔ （ｃ）に示す。ここでは従来の方法’ｔ２ｍ類Ａ
、 Ｂとして示している。There is known an apparatus which performs etching by extracting an ion beam from an ion source into a vacuum and irradiating Si with the ion beam for a certain period of time in a vacuum or an active gas atmosphere. (H, R, Kauf fmann, Journal of Baquium Science and Technology (J*V
ac, Sci, Technol. Volume 16 1979 17
(page 9)). In such an apparatus, when etching is performed with ion beam A in a vacuum, the etching rate is slow, and when etching is performed with an ion beam in an active gas atmosphere such as chlorine, the etching rate increases, but ion bombardment increases. There was a drawback that damage was formed on the Si surface due to the synergistic effect of adsorption of active gas molecules.
dation Induced Stacking F
Fig. 4 (b) shows a micrograph (approximately 300x magnification) of
At (c). Here, the conventional method 't2m class A
, shown as B.
第４図（ｂ）は、横軸にエツチング時間、縦軸に工ラテ
ンブレイトを取Ｊ）、Ａ、Ｂ２つの条件による従来のイ
オンビームエツチング方法を示したものである。４１は
、へ条件すなわち塩素雰囲気の存？ ＋
在しない真空中で電流密度４． ＯｒｎＡＩｃｍの、Ａ
ｒ イオンビームによるＳｉのイオンビームエツチン
グを行い、１μｍのエツチング深さを得た場合のエツチ
ングレイト及びエツチング時間を示したものである０４
２は、Ｂ条件すなわち、塩素分圧９．２Ｘ１０−’’ｒ
ｏｒｒの雰囲気中で電流密度４．０ｍＡ／−のＡｒ
イオンビームによる８ｉのイオンビームエツチングを行
い、１μｍのエツチング深さを得た場合のエツチングレ
イト及びエツチング時間を示したものである。第４図（
ｃ）は、第４図（ａ）の４１．４２に対応して、４３は
へ条件のエツチング後の表面について、４４はＢ条件の
エツチング後の表面についてそれぞれＯ８Ｆを誘起して
顕微鏡観察したものである０第４図（ｂ）、（ｃ）から
れかるように、高い塩素分圧９．２ Ｘ １’ ＯＴｏ
ｒｒでエツチングしたＢ方法の場合、１μｍをエツチン
グするための工、テング時間は１分５６秒と短かいが、
Ｏ８Ｆは数多く観察されている。０８Ｆが数多く観察さ
れるということは、エツチング後のＳｔ衣表面多数のダ
メージが存在したということを意味するロム方法の場合
、０８Ｆは比較的少なく、エツチング表面にダメージが
少なかったことがわかるが、エツチング時間は７分４０
秒と長くなる〇
（発明の目的）
本発明は、このゞような従来の欠点を除去せしめて、Ｓ
ｉのイオンビームエツチングにおいて、エツチングレー
トが大きくしかも８ｉ表面のダメージを小さくできるエ
ツチング方法を提供することを目的とする０
（発明の構成）
本発明では、比較的高い圧力の塩素ガス雰囲気中の８ｉ
に対し、イオン源よ、ＣＡｒ イオンビームを照射し、
所期のエツチング深さよシ４やや浅くエツチングする０
その後、塩素ガス圧力を下げてＡｒ”イオンビームを照
射し、所期のエツチング深さまでエツチングする。この
方法によｊ）、ｓｔを高速工、テングするとともに、エ
ツチング後の８ｉ表面を低ダメージ化することができる
Ｏ
（構成の詳細な説明）
本発明は、上述の方法をとるととＫよシ、従来技術の問
題点を解決した０
第２図は、本発明に用いたイオン源による８ｉのイオン
ビームエツチングにおける、エツチングレイトのＡｒ”
電流密度依存性を、塩素分圧をパラメータとして示した
ものである０図において、２１は塩素分圧０Ｔｏｒｒ、
２２は０．２ Ｘ １０−’Ｔｏｒｒ、２３は９．２
Ｘ １０−’ＴｏｒｒにおけるエツチングレイトのＡｒ
＋電流密度依存性である。FIG. 4(b) shows the conventional ion beam etching method under two conditions A and B, with the horizontal axis representing the etching time and the vertical axis representing the etching rate. 41 is the following condition, that is, the existence of a chlorine atmosphere? + current density in a vacuum without 4. OrnAIcm's A
04 shows the etching rate and etching time when an etching depth of 1 μm is obtained by performing ion beam etching of Si using an ion beam.
2 is B condition, that is, chlorine partial pressure 9.2X10-''r
Ar with a current density of 4.0 mA/- in an atmosphere of orr
This figure shows the etching rate and etching time when an etching depth of 1 μm was obtained by performing 8i ion beam etching using an ion beam. Figure 4 (
c) corresponds to 41.42 in FIG. 4(a), 43 is the surface after etching under condition B, and 44 is the surface after etching under condition B, which were observed with a microscope by inducing O8F. As can be seen from Figure 4(b) and (c), the high chlorine partial pressure is 9.2
In the case of method B etching with rr, the etching time to etch 1 μm is short at 1 minute 56 seconds.
Many O8Fs have been observed. Observation of a large number of 08F means that there was a lot of damage to the surface of the etched coating after etching.In the case of the ROM method, there were relatively few 08F, indicating that there was little damage to the etching surface. Etching time is 7 minutes 40 minutes
(Objective of the Invention) The present invention eliminates such conventional drawbacks and
An object of the present invention is to provide an etching method that can increase the etching rate and reduce damage to the 8i surface in ion beam etching of 8i.
On the other hand, the ion source irradiates CAr ion beam,
Intended etching depth: 4: Etch slightly shallower: 0
After that, the chlorine gas pressure is lowered and Ar'' ion beam is irradiated to etch to the desired etching depth. By this method, the 8i surface after etching is reduced in damage while high-speed machining and lengthening are performed on the st. (Detailed description of the configuration) The present invention solves the problems of the prior art compared to the method described above. In ion beam etching, the etching rate Ar”
In Figure 0, which shows the current density dependence using chlorine partial pressure as a parameter, 21 indicates chlorine partial pressure 0 Torr;
22 is 0.2 x 10-'Torr, 23 is 9.2
Etching rate Ar at X 10-'Torr
+ Current density dependence.
本発明では、まず、塩素分圧９．２ Ｘ １０””Ｔｏ
ｒｒ下においてＡｒ＋イオンビームの電流密度ヲ２．５
ｍＡ／ａ＋＋２〜４．０ ＩｒＩＡ７−として８ｉのイ
オンビームエツチングを行う。第２図２３に示されてい
るよう゛に、この条件では約３２００ Ｘ／ ｍｉｎ〜
約５３００Ｘ／’ｍ Ｉ ｎの高いエツチングレイトが
得られる。このエツチングレイトに従い、目的とするエ
ツチング深さよシも５０Ｘ少ない深さまでイオンビーム
エツチングを続ける０この間、Ｓｉは高速でエツチング
されるが、 Ｓｉ表面のイオン衝撃点には塩素分子が多
数吸着するため、イオン衝撃の物理的スパッタによるダ
メージは、塩素分子の化学的なエツチング効果によって
拡大する。このため、 Ｓｉ表面には多数のダメージが
残される〇
続いて、先の塩素分圧の１／４６である塩素分圧２−Ｏ
ＸＩＯ″″５Ｔｏｒｒ下においてＡｒ紮オンビームの電
流密度を２．５ ｍＡ／ａ＊として３５秒間のエツチン
グを行う０第２図の２２に示されているように、この条
件下におけるエツチングレイトは約８０Ｘ／ｍｉｎであ
るため、３５秒間で約５０Ｘの追加エツチングが成され
る０この低圧の塩素雰囲気中における追加エツチング中
に、先の高速エツチング中に形成された多数のダメージ
は、ダメージ層がエツチングされてほとんど消失する■
また、新しい８ｉ工ツチング面にはダメージははとんど
生じない口これは次の２つの効果によるものである。第
１に、塩素分圧が高速エツチングの場合の１７４６と低
いため、塩素分子の吸着による表面汚染が少なく、これ
が引き壌こすダメージが形成され難い〇第２に、少量の
塩素分子が存在することによル、Ａ：イオン衝撃の物理
的スパッタによるダメージの周辺がわずかにエツチング
され、物理的スパッタによるダメージが緩和される０こ
のため、よルダメージの少ないエツチング面が形成され
るｏこのような２つの効果によりて、追加エツチング後
の８ｉ工ツチング面はダメージの少ないものとなる。In the present invention, first, the partial pressure of chlorine is 9.2
Under rr, the current density of Ar+ ion beam is 2.5
Perform 8i ion beam etching as mA/a++2 to 4.0 IrIA7-. As shown in Fig. 223, under this condition, approximately 3200 X/min ~
A high etching rate of approximately 5300X/'min is obtained. According to this etching rate, ion beam etching is continued until the target etching depth is 50X less than the desired etching depth. During this time, Si is etched at a high speed, but many chlorine molecules are adsorbed at the ion bombardment points on the Si surface. The physical sputtering damage caused by ion bombardment is magnified by the chemical etching effect of chlorine molecules. Therefore, many damages are left on the Si surface.Next, the chlorine partial pressure is 2-O, which is 1/46 of the previous chlorine partial pressure.
Etching is carried out for 35 seconds under XIO''5 Torr with the current density of the Ar ligation beam being 2.5 mA/a*. As shown at 22 in Figure 2, the etching rate under this condition is approximately 80X. /min, so an additional etching of about 50X is achieved in 35 seconds.During this additional etching in a low pressure chlorine atmosphere, a large number of damages formed during the previous high speed etching are removed by etching the damaged layer. almost disappears■
Moreover, damage hardly occurs to the new 8i cutting surface.This is due to the following two effects. Firstly, because the chlorine partial pressure is as low as 1746 in the case of high-speed etching, there is less surface contamination due to adsorption of chlorine molecules, which makes it difficult to form damage caused by soiling.Secondly, there is a small amount of chlorine molecules present. A: The area around the damage caused by physical sputtering due to ion bombardment is slightly etched, and the damage caused by physical sputtering is alleviated. Therefore, an etched surface with less damage is formed. Due to these two effects, the 8i etched surface after additional etching is less damaged.
以上に述べた高圧塩素分圧下の高速エツチングと低圧塩
素分圧加の追加低速エツチングを続けて行うことによシ
、高速のエツチングを行うと同時にダメージの少ないエ
ツチング表面を得ることが可能となる。By successively performing the above-described high-speed etching under high-pressure chlorine partial pressure and additional low-speed etching under low-pressure chlorine partial pressure, it is possible to perform high-speed etching and at the same time obtain an etched surface with little damage.
（実施例）
以下本発明の実施例について図面を参照して詳細に説明
する０第３図に本発明の実施例を示す。・８ｉの試料３
１は、ガス導入管３２から導入した塩素ガス３３の雰囲
気中に置かれている０この試料３１に対し、イオン源３
４から出たＡｒ イオンビーム３５含照射する。ガス導
入管３２から導入する塩素ガス３３の分圧は、レギュレ
ーター３６の調節によル、ｊｌｌの高速エツチングの際
は９．２×１０”’ Ｔｏｒｒに、第２の追加エツチン
グの際は２．ＯＸ １０”Ｔｏｒｒに調整する。イオン
源３４から出すムｒイオ／ビーム３５の電流密度は、第
４の高速エツチングの際は２．５〜４．０ｍＡ／ｃｍ２
に、第２の追加エツチングの際は２．５ ｍＡ／ａｍに
調整する。(Example) An example of the present invention will be described in detail below with reference to the drawings.An example of the present invention is shown in FIG.・8i sample 3
1 is placed in an atmosphere of chlorine gas 33 introduced from a gas introduction pipe 32.
It is irradiated with an Ar ion beam 35 emitted from 4. The partial pressure of the chlorine gas 33 introduced from the gas introduction pipe 32 is adjusted by the regulator 36, and is set to 9.2 x 10'' Torr during high-speed etching of Jll, and to 2.2 Torr during the second additional etching. Adjust to OX 10” Torr. The current density of the ion beam 35 emitted from the ion source 34 is 2.5 to 4.0 mA/cm2 during the fourth high-speed etching.
Then, during the second additional etching, the current was adjusted to 2.5 mA/am.
塩素分圧及びＡｒ”イオンビーム電流密度は、所期のエ
ツチング深さの大小によシ、任意の適当な値を取るとと
ができるのは言うまでもない〇第１ 図（ａ）ｔ （ｂ
）は、本発明のイオンビームエツチング方法によるエツ
チング時間及び工、テング後の表面の顕微鏡写真を示し
たものである。第１図（、）は、横軸にエツチング時間
、縦軸にエツチングレイトを取シ、本発明の異なる塩素
分圧による連続的なエツチングの条件を示している。１
１は、エツチング時間Ｏ秒〜１分５０秒のエツチングは
塩素分圧９．２ Ｘ １０ Ｔｏｒｒ、 Ａｒ＋電流
密度４− ＯｍＡ／０で行い、１分５０秒〜３分のエツ
チングは塩素分圧２．０Ｘ１０ Ｔｏｒｒ、Ａｒ 電
流密度２．５ｍＡ／−で行ったもので、エツチング深さ
１μｍを得ている〇第１図（ｂ）は、この本発明による
イオンビームエツチング後の８ｉ表面にＯ８Ｆを誘起さ
せこの面を光学顕微鏡観察した写真（約３００倍）であ
る〇本発明のイオンビームエツチング方法によれば０８
Ｆ誘起の積層欠陥は全く観察されず、従来方法を示した
第４図人よシもエツチングによるダメージが少なく、第
４図Ｂよシははるかに表面が低ダメージであることがわ
かる。第１図（ａ）に示された１μｍをエツチングする
ためのエツチング時間は３分であシ、この時間を従来方
法で１μｍエツチングした場合と比較すると、第４図Ｂ
の１分５６秒よりｕ約１分長いが、第４図人の７分４０
秒よりは大幅に短かい。以上のエツチング時間及び表面
のダメージという２つの観点から考えて、本発明では従
来方法と比較して、エツチング時間を短かくすると同時
にダメージの少ないエツチング表面を得ることができる
と言える口
本発明の実施例では、最初の高い塩素分圧を９．２Ｘ１
０ Ｔｏｒｒ、追加エツチングの際の低い塩素分圧管
２．ＯＸ １０−５Ｔｏｒｒとして行ったが、所期のエ
ツチング深さが浅い場合には、高い塩素圧力をたとえば
５Ｘ１０ Ｔｏｒｒ等に下げてエツチングレイトを抑
えてエツチングするか、あるいはＡｒ＋イオンビームの
電流密度の方を下げてエツチングしても、本発明の効果
は十分に発揮されることは言うまでもない。It goes without saying that the chlorine partial pressure and the Ar'' ion beam current density can be set to any appropriate values depending on the desired etching depth.
) shows the etching time and etching by the ion beam etching method of the present invention, and a microscopic photograph of the surface after etching. FIG. 1 (,) shows the conditions of continuous etching at different partial pressures of chlorine according to the present invention, with the horizontal axis representing the etching time and the vertical axis representing the etching rate. 1
1, etching for 0 seconds to 1 minute 50 seconds was performed at a chlorine partial pressure of 9.2 x 10 Torr, Ar + current density 4-OmA/0, and etching for 1 minute 50 seconds to 3 minutes was performed at a chlorine partial pressure of 2 0x10 Torr, Ar current density of 2.5 mA/-, and an etching depth of 1 μm was obtained. Figure 1 (b) shows O8F induced on the 8i surface after ion beam etching according to the present invention. This is a photograph (approximately 300x magnification) of this surface observed with an optical microscope. According to the ion beam etching method of the present invention, 08
No F-induced stacking faults were observed, and it can be seen that the conventional method shown in Figure 4 shows less damage due to etching, and the surface in Figure 4B shows much less damage. The etching time for etching 1 μm shown in FIG. 1(a) is 3 minutes, and when compared with the case of etching 1 μm using the conventional method, the etching time shown in FIG.
It is about 1 minute longer than 1 minute 56 seconds in Figure 4, but it is 7 minutes 40 seconds for humans.
Much shorter than seconds. Considering the above two aspects of etching time and surface damage, it can be said that the present invention can shorten the etching time and at the same time obtain an etched surface with less damage compared to the conventional method. In the example, the initial high chlorine partial pressure is 9.2X1
0 Torr, low chlorine partial pressure tube during additional etching2. The etching was carried out at OX 10-5 Torr, but if the desired etching depth is shallow, the etching rate should be reduced by lowering the high chlorine pressure to, for example, 5 x 10 Torr, or the current density of the Ar + ion beam should be lowered. It goes without saying that the effects of the present invention can be fully exhibited even when etching is performed at a lower value.
（発明の効果）
以上詳細に述べた通シ、本発明によれば高いエツチング
レイト（短かいエツチング時間）でエツチングできしか
もエツチングによるダメージの少ない８ｉ工ツチング表
面な得ることができる。(Effects of the Invention) As described in detail above, according to the present invention, it is possible to obtain an 8i etched surface that can be etched at a high etching rate (short etching time) and has less damage due to etching.
第１図（ａｌは本発明の詳細な説明する図、第１図（ｂ
）は本発明の方法でエツチングした後の表面の光学顕微
鏡写真
第２図は塩素分圧をパラメータとしイオンビーム電流密
度の変化によるエツチングレートの変化を示す図。
第３図は本発明に用いるエツチング装置の概念図Ｏ
第４図（ａ）は塩素のあるなしによるエツチングレート
の違いを示す図〇
第４図（ｂ）ｊ （ｃ）は従来の方法でエツチングした
後の光学顕微鏡写真。
オ １図 （０）
エツチング時間 （ｍｉｎ ）
八−電流密度 ２．５ｍＡ／ｃｍ２
オ １ 図 （ｂ）
７２ 図
Ａｒ＋イオンビーム電流密度（ｍＡ／ｃｒｎ２）２１：
塩素分圧 なし
２２ ’ ／／ ２．ＯＸＩσ５Ｔｏｒｒ２３
： ｏ ９．２ｘｌσ’Ｔｏｒｒ７３ 図
３１：試料
３２ ガス導入管
３３ 塩素カス分子
３４ イオン源
３５ ’ Ａ’、イオン
３６ レギュレーター
第４図 （０）
エツチング時間 （ｍｉｎ）
オ ４ 図 （Ｃ）
４４＋８条件
手続補正書（方剤
昭和 年５９“１Ａ２６日
事件の表示 昭和５９年 特許 願第１３７６１、
発明の名称 ８ｉの低ダメージ・イオンビームエツ
チング方法３、補正をする者
事件との関係 出 願 人東京都港区芝五
丁目３３番１号
、代理人
（連絡先 日本電気株式会社特許部）
５、補正命令の日付 昭和５９年１０月３０日（発送
日）６．補正の対象 明細書の図面の簡単な説明の欄
７、補正の内容
（１）明細書第１Ｏ頁鮮１５行目に「表面の」とあるの
を「Ｓｉ表面の結晶の構造を示す」と補正する。
（２）明細書第１１頁第５行目に「の光学顕微鏡写真」
とあるのを「のＳｉ表面の結晶の構造を示す光学顕微鏡
写真」と補正する。Figure 1 (al is a detailed explanation of the present invention, Figure 1 (b)
) is an optical micrograph of the surface after etching by the method of the present invention. FIG. 2 is a diagram showing changes in etching rate due to changes in ion beam current density using chlorine partial pressure as a parameter. Figure 3 is a conceptual diagram of the etching apparatus used in the present invention. Figure 4 (a) is a diagram showing the difference in etching rate between the presence and absence of chlorine. Figure 4 (b) and (c) are the diagrams for etching using the conventional method. Optical micrograph after. E 1 Figure (0) Etching time (min) 8 - Current density 2.5 mA/cm2 O 1 Figure (b) 72 Figure Ar + ion beam current density (mA/crn2) 21:
Chlorine partial pressure None 22' // 2. OXIσ5Torr23
: o 9.2xlσ'Torr73 Figure 31: Sample 32 Gas introduction tube 33 Chlorine gas molecules 34 Ion source 35 'A', ion 36 Regulator Figure 4 (0) Etching time (min) O Figure 4 (C) 44+8 condition procedure Written amendment (Method 1984 1A26 day case 1988 patent application No. 13761,
Title of the Invention: 8i Low Damage Ion Beam Etching Method 3, Relationship with the Amendment Case Applicant: 5-33-1 Shiba, Minato-ku, Tokyo, Agent (Contact Information: NEC Corporation Patent Department) 5 , Date of amendment order: October 30, 1982 (shipment date) 6. Subject of amendment Column 7 of the brief explanation of the drawings in the specification, contents of the amendment (1) On page 1, page 1, line 15 of the specification, the phrase “on the surface” has been replaced with “indicates the crystal structure of the Si surface.” to correct. (2) “Optical micrograph of” on page 11, line 5 of the specification.
The text has been corrected to read, "An optical micrograph showing the crystal structure of the Si surface."
Claims (1)
高速エッチングを行い、続いて低い塩素ガス圧力雰囲気
中でイオンビームによる低速エッチングを同Ｓｉに施す
ことを特徴とする、Ｓｉのイオンビームエッチング方法
。An ion beam etching method for Si, comprising performing high-speed etching of Si with an ion beam in a high chlorine gas pressure atmosphere, and then performing low-speed etching of the Si with an ion beam in a low chlorine gas pressure atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13761784A JPS6116523A (en) | 1984-07-03 | 1984-07-03 | Less damage ion beam etching process of silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13761784A JPS6116523A (en) | 1984-07-03 | 1984-07-03 | Less damage ion beam etching process of silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6116523A true JPS6116523A (en) | 1986-01-24 |
Family
ID=15202861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13761784A Pending JPS6116523A (en) | 1984-07-03 | 1984-07-03 | Less damage ion beam etching process of silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6116523A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007121512A (en) * | 2005-10-26 | 2007-05-17 | Enplas Corp | Optical element and optical element molding die |
-
1984
- 1984-07-03 JP JP13761784A patent/JPS6116523A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007121512A (en) * | 2005-10-26 | 2007-05-17 | Enplas Corp | Optical element and optical element molding die |
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