JPS61164202A - Manufacture of moisture-sensitive resistor - Google Patents

Manufacture of moisture-sensitive resistor

Info

Publication number
JPS61164202A
JPS61164202A JP60004842A JP484285A JPS61164202A JP S61164202 A JPS61164202 A JP S61164202A JP 60004842 A JP60004842 A JP 60004842A JP 484285 A JP484285 A JP 484285A JP S61164202 A JPS61164202 A JP S61164202A
Authority
JP
Japan
Prior art keywords
sensitive resistor
humidity
moisture
sintering
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60004842A
Other languages
Japanese (ja)
Inventor
恵三 塚本
守 石井
上赤 日出人
山岸 千丈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Cement Co Ltd
Original Assignee
Nihon Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Cement Co Ltd filed Critical Nihon Cement Co Ltd
Priority to JP60004842A priority Critical patent/JPS61164202A/en
Publication of JPS61164202A publication Critical patent/JPS61164202A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は新規な原料を用いて゛低温焼結を可能にする感
湿抵抗体の製造方法に関”する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a moisture-sensitive resistor that uses a new raw material and enables low-temperature sintering.

〔従来の技術〕[Conventional technology]

従来、湿度変化に応じて電気抵抗が変化することを利用
して湿度測定する感湿抵抗体がある。
2. Description of the Related Art Conventionally, there is a humidity-sensitive resistor that measures humidity by utilizing a change in electrical resistance in response to a change in humidity.

それには金属酸化物原料を焼結することによって得られ
る焼結体が多く用いられている。その原料としてはTi
 02 、 Mg CrzOt、 V205. Al1
03などを適宜に組合せたものが使われている。そして
該原料を焼結して感湿抵抗体を製造するには1200〜
1350℃という高温の焼結温度が必要であった。
Sintered bodies obtained by sintering metal oxide raw materials are often used for this purpose. The raw material is Ti
02, MgCrzOt, V205. Al1
03 etc. are used in appropriate combinations. And 1200~
A high sintering temperature of 1350°C was required.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

高温で焼結する場合、温度制御が厳密に行む1難いため
、製造された感湿抵抗体の品質tこノくラツキが生じ、
数φ程度の不良品の発生は避けられなかった。
When sintering at high temperatures, it is difficult to strictly control the temperature, resulting in slight variations in the quality of the manufactured moisture-sensitive resistor.
The occurrence of defective products of several diameters was unavoidable.

また、焼結温度が高温であると、その炉に用いる各種部
材、すなわち耐火材料や発熱体Cま温度条件に合わせて
高温用の部材を使用しなければならないという問題があ
った。
Further, when the sintering temperature is high, there is a problem that various members used in the furnace, such as refractory materials and heating elements C, must be used in accordance with the temperature conditions.

〔問題点を解決するための手段〕[Means for solving problems]

そこで本発明者らは上述の欠点を解消すると共(乙省エ
ネルキーも考慮して、より低温度で焼結しても従来の感
湿抵抗体の特性を有する新規な焼結体原料について鋭意
研究した結果1本発明に到達した。
Therefore, in order to eliminate the above-mentioned drawbacks (B) and also take into account the energy saving key, the present inventors have conducted intensive research on a new sintered material that has the characteristics of a conventional moisture-sensitive resistor even when sintered at a lower temperature. As a result, we have arrived at the present invention.

すなわち本発明はMe3VO4(MeはNaおよび/ま
たはK)およびTlO2からなる混合物を700〜90
0℃で焼結することを特徴とする感湿抵抗体の製造方法
である。
That is, the present invention uses a mixture of Me3VO4 (Me is Na and/or K) and TlO2 at 700 to 90%
This is a method for manufacturing a moisture-sensitive resistor characterized by sintering at 0°C.

本発明の感湿抵抗体の製造方法を図によって説明する。A method for manufacturing a humidity-sensitive resistor according to the present invention will be explained with reference to the drawings.

第1図は感湿抵抗体の製造工程を4ブロツクに分けたフ
ロック図で、]0はM’e3VO4+TlO2およびバ
インダーの混合調製工程、】1は前記混合物を所定形状
に成形するための加圧成形工程、12はその成形体を焼
結するための焼結工程、]8は焼結体表面を必要に応じ
て研磨したのち、その表面に電極をつけて湿度センサー
をつくる研磨加工工程である。
Figure 1 is a block diagram showing the manufacturing process of a humidity-sensitive resistor divided into four blocks, where ]0 is the mixing and preparation process of M'e3VO4+TlO2 and a binder, ]1 is the pressure molding process to mold the mixture into a predetermined shape. Step 12 is a sintering step for sintering the molded body; and 8 is a polishing process in which the surface of the sintered body is polished as necessary, and then electrodes are attached to the surface to create a humidity sensor.

以上のようにして製造された湿度センナ−に第2図に示
すようにリード線をつけて電気抵抗測定回路に接続すれ
ば湿度測定器が得られる。
A humidity measuring device can be obtained by attaching lead wires to the humidity sensor manufactured as described above and connecting it to an electrical resistance measuring circuit as shown in FIG.

本発明に用いるMe3VO4はこの分野では新規な物質
であり、原料としてMe3■04を用いることが必須要
件であり、これにTi 02を併用する。
Me3VO4 used in the present invention is a new substance in this field, and it is essential to use Me3VO4 as a raw material, and Ti02 is used in combination with this.

このMe3VOaのMeはNa、にのいずれか、あるい
は両者を含むものである。Me3VOtは市販されてい
るものを用いてもよく、またNa 20 r K20 
rNa2C03,に2CO3などのMeを含む化合物と
V2O5゜NHtVO3などの■を含む化合物とを終局
的にMesV04になるように配合し、600〜650
°C11時間程度力I熱して得られるMe !S VO
4を用いてもよい。
Me in this Me3VOa contains either Na, or both. Me3VOt may be commercially available, or Na20rK20
A compound containing Me such as 2CO3 and a compound containing ■ such as V2O5゜NHtVO3 are mixed with rNa2C03, so that the final result is MesV04, and 600 to 650
Me obtained by heating at °C for about 11 hours! S.V.O.
4 may be used.

TiO2は市販されているものが用いられる。Commercially available TiO2 is used.

前記二原料の混合割合は特に限定さ−れないが。The mixing ratio of the two raw materials is not particularly limited.

好ましい範囲はMe3VOaが0.3〜20%、TiO
2カ80〜999チである。
The preferred range is 0.3 to 20% Me3VOa, TiO
It is 80 to 999 chi for 2 ka.

原料を成形するには一般にバインダーが用いられるが、
これには慣用の材料、たとえばポリビニルアルコールや
メチルセルロースの水溶液が挙げられる。
A binder is generally used to mold raw materials, but
These include conventional materials such as polyvinyl alcohol and aqueous solutions of methylcellulose.

前記二原料およびバインダーを混合した混合物は700
〜900°Cで少なくとも30分間以上焼結される。焼
結温度が700℃未満では焼結不十分なため、得られた
焼結体は強度不足になり好ましくない。また逆に900
℃以上では焼き締りすぎ、これを用いてつくった湿度セ
ンサーの応答特性が悪くなり好ましくない。
The mixture of the two raw materials and the binder is 700%
Sintered at ~900°C for at least 30 minutes. If the sintering temperature is less than 700°C, the sintering will be insufficient and the resulting sintered body will lack strength, which is not preferable. On the other hand, 900
If it is above ℃, it will become too hard and the response characteristics of the humidity sensor made using it will deteriorate, which is not preferable.

〔実施例〕〔Example〕

次に本発明を実施例に基いて説明する。 Next, the present invention will be explained based on examples.

実施例1〜7.比較例1 第1表に示す混合割合になるようにMe3 VO4およ
びT i O2を乳鉢で混合調製したのち、5チポリビ
ニルアルコール水溶液を前記固形分に対し]重量係混合
した。それぞれの混合物を1.5 t/caで加圧し、
 ] OX]、OX0.5mmの大きさの成形体を得た
Examples 1-7. Comparative Example 1 Me3 VO4 and T i O2 were mixed in a mortar so as to have the mixing ratio shown in Table 1, and then a 5-tipolyvinyl alcohol aqueous solution was mixed in a weight ratio relative to the solid content. Each mixture was pressurized at 1.5 t/ca,
] OX], a molded article having a size of 0.5 mm was obtained.

これらの成形体は焼結工程において酸化雰囲気下3時間
の焼結を行った。得られた感湿抵抗体を慣用の方法で研
磨し、その研磨の容易さから、焼結体の固さを判断して
最適焼結温度を調べ、その結果を同表に併記した。
These compacts were sintered in an oxidizing atmosphere for 3 hours in the sintering process. The obtained moisture-sensitive resistor was polished by a conventional method, and the optimum sintering temperature was determined by determining the hardness of the sintered body based on the ease of polishing, and the results are also listed in the table.

第  1  表 次に感湿抵抗体で感湿機能を有するか否かについて試験
するために、実施例2で製造した感湿抵抗体表面に、第
2図に示すようなくし形電極およびリード線をつけ湿度
センサーを作成した。この湿度センサーを用いて20°
C1相対湿度80〜90%における眠気抵抗値を測定し
、その結果を第8図に示した。
Table 1 Next, in order to test whether the humidity-sensitive resistor has a moisture-sensing function, interdigital electrodes and lead wires as shown in FIG. 2 were attached to the surface of the humidity-sensitive resistor manufactured in Example 2. I created a humidity sensor. 20° using this humidity sensor
The drowsiness resistance value was measured at C1 relative humidity of 80 to 90%, and the results are shown in FIG.

〔発明の効果〕〔Effect of the invention〕

本発明で説明したMe3vO4およびTlO2の二原料
を用いれば、従来法より250〜350℃低い焼結温度
で感湿抵抗体が製造でき、しかもそれによって得られた
感湿抵抗体の感湿機能は十分満足できるものであった。
By using the two raw materials Me3vO4 and TlO2 described in the present invention, a humidity-sensitive resistor can be manufactured at a sintering temperature 250 to 350°C lower than that of the conventional method, and the humidity-sensing function of the resulting humidity-sensitive resistor is It was quite satisfactory.

焼結温度が低いため、温度制御が十分に行われ、その結
果得られる感湿抵抗体は均一な品質を有するものが得ら
れ、不良品は殆んど発生しなかった。
Since the sintering temperature was low, the temperature was sufficiently controlled, and the resulting moisture-sensitive resistors had uniform quality, with almost no defective products.

従って本発明を実施することにより、焼結炉に用いられ
る各種部材は安価な普通のものが使用できると共に焼結
制御も容易になり、省エネルギーを達成することができ
る。
Therefore, by carrying out the present invention, inexpensive and ordinary members can be used as the various members used in the sintering furnace, and sintering control becomes easy and energy saving can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に基いた感湿抵抗体の製造工程を示すフ
ロック図であり、第2図は本発明によって製造された感
湿抵抗体を用いた湿度センサーの一例を示す図である。 第3図は実施例2で製造した感湿抵抗体の相対湿度と電
気抵抗値との関係を示すグラフである。
FIG. 1 is a block diagram showing the manufacturing process of a humidity-sensitive resistor according to the present invention, and FIG. 2 is a diagram showing an example of a humidity sensor using the humidity-sensitive resistor manufactured according to the present invention. FIG. 3 is a graph showing the relationship between relative humidity and electrical resistance of the humidity-sensitive resistor manufactured in Example 2.

Claims (1)

【特許請求の範囲】[Claims]  Me_3VO_4(MeはNaおよび/またはK)お
よびTiO_2からなる混合物を700〜900℃で焼
結することを特徴とする感湿抵抗体の製造方法。
A method for manufacturing a moisture-sensitive resistor, comprising sintering a mixture of Me_3VO_4 (Me is Na and/or K) and TiO_2 at 700 to 900°C.
JP60004842A 1985-01-17 1985-01-17 Manufacture of moisture-sensitive resistor Pending JPS61164202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60004842A JPS61164202A (en) 1985-01-17 1985-01-17 Manufacture of moisture-sensitive resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60004842A JPS61164202A (en) 1985-01-17 1985-01-17 Manufacture of moisture-sensitive resistor

Publications (1)

Publication Number Publication Date
JPS61164202A true JPS61164202A (en) 1986-07-24

Family

ID=11594935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60004842A Pending JPS61164202A (en) 1985-01-17 1985-01-17 Manufacture of moisture-sensitive resistor

Country Status (1)

Country Link
JP (1) JPS61164202A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370010U (en) * 1986-10-28 1988-05-11

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101401A (en) * 1981-12-14 1983-06-16 秩父セメント株式会社 Dew condensation sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101401A (en) * 1981-12-14 1983-06-16 秩父セメント株式会社 Dew condensation sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370010U (en) * 1986-10-28 1988-05-11

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