JPS61163197A - Production of single crystal sbsbr - Google Patents

Production of single crystal sbsbr

Info

Publication number
JPS61163197A
JPS61163197A JP537285A JP537285A JPS61163197A JP S61163197 A JPS61163197 A JP S61163197A JP 537285 A JP537285 A JP 537285A JP 537285 A JP537285 A JP 537285A JP S61163197 A JPS61163197 A JP S61163197A
Authority
JP
Japan
Prior art keywords
sbsbr
single crystal
crystal
raw material
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP537285A
Other languages
Japanese (ja)
Inventor
Masatoshi Saito
正敏 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP537285A priority Critical patent/JPS61163197A/en
Publication of JPS61163197A publication Critical patent/JPS61163197A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain the single crystal SbSBr which has a required size and is excellent in the quality by making a mixture of 1:(1-2) molar ratio of SbS3 and SbBr3 a raw material, using SbSBr as a seed crystal and performing a pressurization type LEC method. CONSTITUTION:Each 1mol of SbS3 and SbBr3 being a raw material is respectively introduced into a crucible 6 and e.g. the suitable quantity of B2O3 is introduced thereinto as a surface covering material. Then a seed crystal SbSBr 3 is set to a rotating axis 8 and an inert gas is pressed into the inside of a furnace 1 to several tens atms from several atms. Therein electricity is conducted to a high frequency coil 7 to melt the raw material and the covering material in the crucible 6 and the upbringing of the single crystal is performed while observing the growing state of the crystal from a slight window 2. Thereby the single crystal SbSBr which has a diameter of several inches and the stoichiometric composition and is less in the fault is obtained. This single crystal can be utilized as an optical memory as an optical switch, etc.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光伝導性をもつ強誘電体であり、光メモリ、
光スィッチ等に利用可能な単結晶Ｓ　ｂｓＩに製造法に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a ferroelectric material having photoconductivity, which can be used for optical memory,
The present invention relates to a method for manufacturing single crystal SbsI that can be used for optical switches and the like.

〔従来の技術〕[Conventional technology]

従来は、石英アンプルにＳｂｅ　Ｓ＃　Ｂ　ｒの化合物
を封じ込め、ブリッジマン法により、径が２〜３■、長
さが２〜６ＩＩＩ＋程度の製造されている。Conventionally, a compound of Sbe S# Br is sealed in a quartz ampoule, and a diameter of about 2 to 3 cm and a length of about 2 to 6 III+ are produced by the Bridgman method.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

前述の従来技術では、例えば光デバイスとして必要な結
晶の大きさ、径にして数インチのものを得ることはでき
ず、又、品質に於ても不純物、欠陥の混入は避げられな
いという問題があった。With the above-mentioned conventional technology, for example, it is not possible to obtain a crystal of several inches in diameter, which is necessary for an optical device, and there is also the problem that the quality is unavoidable due to the inclusion of impurities and defects. was there.

本発明は、この様な問題点を解決するもので、その目的
とするところは、デバイスとして利用可能なサイズ及び
品質を有する単結晶ＳｂＳＢｒを提供することにある。The present invention is intended to solve these problems, and its purpose is to provide single crystal SbSBr having a size and quality that can be used as a device.

〔問題を解決する手段〕[Means to solve the problem]

本発明の単結Ｊｌｌ　８　ｂ　Ｓ　Ｂ　ｒの製造法は、
硫化アンチモン（ｓｂｓａ）、臭化アンチモン（Ｓ　ｂ
　Ｂ　ｒｌ）をモル比で１対１から２の割合で原料とし
、加圧型ＬＩＣ法により単結晶ＳｂＳＢｒの製造をする
ことを特徴とする。The method for producing single bond Jll 8 b S Br of the present invention is as follows:
Antimony sulfide (sbsa), antimony bromide (S b
The method is characterized in that single-crystal SbSBr is produced by a pressurized LIC method using B rl) as a raw material at a molar ratio of 1:1 to 2.

〔作用〕[Effect]

本発明の作用を述べれば　（１）数インチの単結晶８ｂ
ＳＩが得られる　（１）加圧型ＩＩＣ法により、化学責
論的組成比が８ｂ、Ｓ、Ｂｒに対して１：１＝１に近い
ものが得られる　（１１）欠陥が少ない単結晶ＳｂＳＢ
ｒが得られることである。To describe the effects of the present invention: (1) Several inches of single crystal 8b
SI can be obtained (1) By pressurized IIC method, a chemical composition ratio close to 1:1=1 for 8b, S, and Br can be obtained (11) Single crystal SbSB with few defects
r is obtained.

〔実施例〕〔Example〕

第１図は、本発明に用いた加圧型ＬＥＣｆｆｉの模式図
である。まず、るつぼ■に原料であるＳｂＳ、。FIG. 1 is a schematic diagram of a pressurized LECffi used in the present invention. First, the raw material SbS is placed in the crucible ■.

Ｓ　ｂ　Ｂ　ｒ３を各１モルずつ入れ、次に表面皮覆材
として例えば酸化ホウ素ＣＢ１０ｍ）を適当量大れる。Add 1 mole each of S b B r3, and then add an appropriate amount of boron oxide (CB10m) as a surface coating material.

次に、回転軸■に種結晶ＳｂＳＢｒ■をセットとし、■
の炉内に、不活性ガスを数気圧から数十気圧に加圧して
いれる。次に、高周波コイル■に電流を流し、ルツボ内
の原料及び表面被種材を溶融し、のぞき窓（りから、結
晶の成長状況を見ながら、単結晶の育成を行なう。回転
軸の速度を２０〜４０ｒＰｍ）不活性ガスとしてＡｒを
５気圧まで加圧し、成長速度を１〜５　ａｘ／　ｈ　ｒ
、　’１ｌｉ−に２ｍ＋／ｈｒで育成したｔころ、結晶
径が２インチの単結晶ＳｂＳＢｒが得られた。Next, set the seed crystal SbSBr■ on the rotating shaft ■, and
Inert gas is pressurized from several atmospheres to several tens of atmospheres into the furnace. Next, a current is applied to the high-frequency coil (■) to melt the raw material and surface seed material in the crucible, and a single crystal is grown while observing the growth status of the crystal through the peephole. 20-40 rPm) Pressure Ar as an inert gas to 5 atm, and increase the growth rate to 1-5 ax/hr.
, '1li- at a rate of 2m+/hr, single crystal SbSBr with a crystal diameter of 2 inches was obtained.

〔発明の効果〕 上述の如く、本発明の単結ａ＋ｌｔｉ造法によれば、従
来の製造法では、不可能であった大きさ及び品質の良い
単結晶ＳｂＳＢｒを得ることができ、光メモリ、光スチ
ツチ材料である単結晶ＳｂＳＢｒを安価に供給できる。[Effects of the Invention] As described above, according to the single-crystal a+lti manufacturing method of the present invention, it is possible to obtain single-crystal SbSBr of a size and quality that was impossible with conventional manufacturing methods. Single crystal SbSBr, which is a stitch material, can be supplied at low cost.

【図面の簡単な説明】[Brief explanation of drawings]

Claims (1)

【特許請求の範囲】[Claims] 硫化アンチモン（ＳｂＳ＿３）、臭化アンチモン（Ｓｂ
Ｂｒ＿３）をモル比で１対１から２の割合で混合したも
のを原料とし、種結晶としてＳｂＳＢｒを用いて単結晶
ＳｂＳＢｒを加圧型ＬＥＣ法により製造することを特徴
とする単結晶ＳｂＳＢｒの製造法。Antimony sulfide (SbS_3), antimony bromide (Sb
Br_3) at a molar ratio of 1:1 to 2 as a raw material, and using SbSBr as a seed crystal, a method for producing single-crystal SbSBr, characterized by producing single-crystal SbSBr by a pressurized LEC method. .
JP537285A 1985-01-16 1985-01-16 Production of single crystal sbsbr Pending JPS61163197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP537285A JPS61163197A (en) 1985-01-16 1985-01-16 Production of single crystal sbsbr

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP537285A JPS61163197A (en) 1985-01-16 1985-01-16 Production of single crystal sbsbr

Publications (1)

Publication Number Publication Date
JPS61163197A true JPS61163197A (en) 1986-07-23

Family

ID=11609336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP537285A Pending JPS61163197A (en) 1985-01-16 1985-01-16 Production of single crystal sbsbr

Country Status (1)

Country Link
JP (1) JPS61163197A (en)

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