JPS61163197A - Production of single crystal sbsbr - Google Patents
Production of single crystal sbsbrInfo
- Publication number
- JPS61163197A JPS61163197A JP537285A JP537285A JPS61163197A JP S61163197 A JPS61163197 A JP S61163197A JP 537285 A JP537285 A JP 537285A JP 537285 A JP537285 A JP 537285A JP S61163197 A JPS61163197 A JP S61163197A
- Authority
- JP
- Japan
- Prior art keywords
- sbsbr
- single crystal
- crystal
- raw material
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光伝導性をもつ強誘電体であり、光メモリ、
光スィッチ等に利用可能な単結晶S bsIに製造法に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a ferroelectric material having photoconductivity, which can be used for optical memory,
The present invention relates to a method for manufacturing single crystal SbsI that can be used for optical switches and the like.
従来は、石英アンプルにSbe S# B rの化合物
を封じ込め、ブリッジマン法により、径が2〜3■、長
さが2〜6III+程度の製造されている。Conventionally, a compound of Sbe S# Br is sealed in a quartz ampoule, and a diameter of about 2 to 3 cm and a length of about 2 to 6 III+ are produced by the Bridgman method.
前述の従来技術では、例えば光デバイスとして必要な結
晶の大きさ、径にして数インチのものを得ることはでき
ず、又、品質に於ても不純物、欠陥の混入は避げられな
いという問題があった。With the above-mentioned conventional technology, for example, it is not possible to obtain a crystal of several inches in diameter, which is necessary for an optical device, and there is also the problem that the quality is unavoidable due to the inclusion of impurities and defects. was there.
本発明は、この様な問題点を解決するもので、その目的
とするところは、デバイスとして利用可能なサイズ及び
品質を有する単結晶SbSBrを提供することにある。The present invention is intended to solve these problems, and its purpose is to provide single crystal SbSBr having a size and quality that can be used as a device.
本発明の単結Jll 8 b S B rの製造法は、
硫化アンチモン(sbsa)、臭化アンチモン(S b
B rl)をモル比で1対1から2の割合で原料とし
、加圧型LIC法により単結晶SbSBrの製造をする
ことを特徴とする。The method for producing single bond Jll 8 b S Br of the present invention is as follows:
Antimony sulfide (sbsa), antimony bromide (S b
The method is characterized in that single-crystal SbSBr is produced by a pressurized LIC method using B rl) as a raw material at a molar ratio of 1:1 to 2.
本発明の作用を述べれば (1)数インチの単結晶8b
SIが得られる (1)加圧型IIC法により、化学責
論的組成比が8b、S、Brに対して1:1=1に近い
ものが得られる (11)欠陥が少ない単結晶SbSB
rが得られることである。To describe the effects of the present invention: (1) Several inches of single crystal 8b
SI can be obtained (1) By pressurized IIC method, a chemical composition ratio close to 1:1=1 for 8b, S, and Br can be obtained (11) Single crystal SbSB with few defects
r is obtained.
第1図は、本発明に用いた加圧型LECffiの模式図
である。まず、るつぼ■に原料であるSbS、。FIG. 1 is a schematic diagram of a pressurized LECffi used in the present invention. First, the raw material SbS is placed in the crucible ■.
S b B r3を各1モルずつ入れ、次に表面皮覆材
として例えば酸化ホウ素CB10m)を適当量大れる。Add 1 mole each of S b B r3, and then add an appropriate amount of boron oxide (CB10m) as a surface coating material.
次に、回転軸■に種結晶SbSBr■をセットとし、■
の炉内に、不活性ガスを数気圧から数十気圧に加圧して
いれる。次に、高周波コイル■に電流を流し、ルツボ内
の原料及び表面被種材を溶融し、のぞき窓(りから、結
晶の成長状況を見ながら、単結晶の育成を行なう。回転
軸の速度を20〜40rPm)不活性ガスとしてArを
5気圧まで加圧し、成長速度を1〜5 ax/ h r
、 ’1li−に2m+/hrで育成したtころ、結晶
径が2インチの単結晶SbSBrが得られた。Next, set the seed crystal SbSBr■ on the rotating shaft ■, and
Inert gas is pressurized from several atmospheres to several tens of atmospheres into the furnace. Next, a current is applied to the high-frequency coil (■) to melt the raw material and surface seed material in the crucible, and a single crystal is grown while observing the growth status of the crystal through the peephole. 20-40 rPm) Pressure Ar as an inert gas to 5 atm, and increase the growth rate to 1-5 ax/hr.
, '1li- at a rate of 2m+/hr, single crystal SbSBr with a crystal diameter of 2 inches was obtained.
〔発明の効果〕
上述の如く、本発明の単結a+lti造法によれば、従
来の製造法では、不可能であった大きさ及び品質の良い
単結晶SbSBrを得ることができ、光メモリ、光スチ
ツチ材料である単結晶SbSBrを安価に供給できる。[Effects of the Invention] As described above, according to the single-crystal a+lti manufacturing method of the present invention, it is possible to obtain single-crystal SbSBr of a size and quality that was impossible with conventional manufacturing methods. Single crystal SbSBr, which is a stitch material, can be supplied at low cost.
Claims (1)
Br_3)をモル比で1対1から2の割合で混合したも
のを原料とし、種結晶としてSbSBrを用いて単結晶
SbSBrを加圧型LEC法により製造することを特徴
とする単結晶SbSBrの製造法。Antimony sulfide (SbS_3), antimony bromide (Sb
Br_3) at a molar ratio of 1:1 to 2 as a raw material, and using SbSBr as a seed crystal, a method for producing single-crystal SbSBr, characterized by producing single-crystal SbSBr by a pressurized LEC method. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP537285A JPS61163197A (en) | 1985-01-16 | 1985-01-16 | Production of single crystal sbsbr |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP537285A JPS61163197A (en) | 1985-01-16 | 1985-01-16 | Production of single crystal sbsbr |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61163197A true JPS61163197A (en) | 1986-07-23 |
Family
ID=11609336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP537285A Pending JPS61163197A (en) | 1985-01-16 | 1985-01-16 | Production of single crystal sbsbr |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61163197A (en) |
-
1985
- 1985-01-16 JP JP537285A patent/JPS61163197A/en active Pending
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