JPS61159302A - Cutting tip - Google Patents
Cutting tipInfo
- Publication number
- JPS61159302A JPS61159302A JP27917584A JP27917584A JPS61159302A JP S61159302 A JPS61159302 A JP S61159302A JP 27917584 A JP27917584 A JP 27917584A JP 27917584 A JP27917584 A JP 27917584A JP S61159302 A JPS61159302 A JP S61159302A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- diamond film
- cutting edge
- tip
- edge member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は切削用チップに関し、より詳細には、量産性お
よび切削性能に優れた切削チップに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a cutting tip, and more particularly, to a cutting tip that is excellent in mass productivity and cutting performance.
（発明の背景） ′
従来から切削用チップとして超硬合金、Ａｊ２ｏ８等の
酸化物、ＳＩＣ、５ｉｓＮ＋等の炭化物、窒化物、ある
いは、超硬合金に炭化物、窒化物を被覆したものが、強
度諮よび耐摩耗性にすぐれていることから、主として使
用されている。(Background of the Invention) Conventionally, cutting tips have been made of cemented carbide, oxides such as Aj2o8, carbides such as SIC, 5isN+, nitrides, or cemented carbides coated with carbides or nitrides. It is mainly used because of its excellent wear resistance and abrasion resistance.
近年、機械材料として、さらに耐摩耗性を有する材料と
してダイヤモンドが注目され、チップへの応用も研究さ
れつつある。In recent years, diamond has attracted attention as a mechanical material and as a material with wear resistance, and its application to chips is also being studied.
チップへの対応としては、天然ダイヤモンｋ、 ゛また
は超高圧、超高温下でダイヤモンド番合成焼結したもの
を工具の刃部に接合するか、または工具面全体にｇ Ｃ
ＶＤ法、プラズマＣＶＤ法、イオンビーム法等の気相合
成により、ダイヤモンド膜を被覆する方法が提案されて
いる。To deal with chips, natural diamonds or synthetic sintered diamonds under ultra-high pressure and high temperature can be bonded to the cutting edge of the tool, or G C can be applied to the entire tool surface.
A method of coating a diamond film by vapor phase synthesis such as a VD method, a plasma CVD method, and an ion beam method has been proposed.
（発明が解決しようとする問題点）
しかしながら、前者の方法では、要部のみへの加工がで
きる点では合理的であるが、焼結体自体の製造に際し、
大型且つ複雑な装置を必要とし、しかも大量生産が困難
なため、コスト的に問題がある。一方、後者の方法では
、装置系が単純であるというメリットを有するが気相成
長の反応空間が狭いうえに、被覆時、チップ母体そのも
のを反応空間内に設置する必要があるため、１度の被覆
処理で得られるチップ数が限定され、しかも大型のチッ
プにおいては、反応空間を広くする必要があり、そのた
め又応装置自体も大型化せざるを得ないのが現状である
。また、気相中での合成では、チップ母体の全体にダイ
ヤモンド膜が形成されることに起因して、ダイヤモンド
膜が不均一になりやすいため、外部応力に対して剥離を
生じゃすくなるという欠点があった。(Problems to be Solved by the Invention) However, although the former method is reasonable in that only the essential parts can be processed, when manufacturing the sintered body itself,
This method requires large and complicated equipment and is difficult to mass produce, resulting in cost problems. On the other hand, the latter method has the advantage that the equipment system is simple, but the reaction space for vapor phase growth is narrow, and the chip matrix itself must be placed in the reaction space during coating. At present, the number of chips that can be obtained by coating is limited, and in the case of large chips, the reaction space must be widened, and therefore the reaction equipment itself must also be increased in size. Another disadvantage of synthesis in the gas phase is that a diamond film is formed over the entire chip matrix, which tends to make the diamond film non-uniform, making it more likely to peel off due to external stress. was there.
（発明の目的）
本発明は、上記の問題点を解決するものであり、その目
的とするところは、構造的に製造効率を高めることが可
能で、それにより安価なダイヤモンド被覆された切削用
チップを提供することである。OBJECT OF THE INVENTION The present invention solves the above-mentioned problems and aims at providing a diamond-coated cutting tip that is structurally capable of increasing manufacturing efficiency and is thereby inexpensive. The goal is to provide the following.
さらに他の目的はダイヤモンド膜の剥離のない切削性能
に優れた切削用チップを提供することである。Still another object is to provide a cutting tip with excellent cutting performance without peeling of the diamond film.
（＋！明の概要）
即ち、本発明では、刃先部材と、該刃先部材を接合支持
するチップ母材により構成され、前記刃先部材には少な
くとも刃部に直接あるいは中間層を介してダイヤモンド
膜が形成されていることを特徴とする切削用チップが提
供される。(Overview of +! Ming) That is, the present invention is composed of a cutting edge member and a chip base material that joins and supports the cutting edge member, and the cutting edge member has at least a diamond film on the blade portion directly or through an intermediate layer. A cutting tip is provided, characterized in that the cutting tip is formed.
（問題を解決するための手段） 以下、図面に基づき、本発明の詳細な説明する。(Means to solve the problem) Hereinafter, the present invention will be described in detail based on the drawings.
第１図は本発明の切削用チップを示す分解斜視図である
。切削用チップ１は刃先部材２とチップ母材３とから構
成され、刃先部材２は、切削用刃部４をその一部に有し
ている。また刃先部材２は刃先用基体５と、その表面に
気相成長法によりダイヤモンド膜６を形成して成る。さ
らに、チップ母材８には、刃先部材２を支持するための
台座７が設けられており、この台座７に刃先部材２を接
合等の手段により、支持することによって、チップ１が
形成される。FIG. 1 is an exploded perspective view showing a cutting tip of the present invention. The cutting tip 1 is composed of a cutting edge member 2 and a tip base material 3, and the cutting edge member 2 has a cutting edge portion 4 in a part thereof. The cutting edge member 2 is made up of a cutting edge base 5 and a diamond film 6 formed on the surface thereof by vapor phase growth. Further, the chip base material 8 is provided with a pedestal 7 for supporting the cutting edge member 2, and the chip 1 is formed by supporting the cutting edge member 2 on this pedestal 7 by means such as bonding. .
本発明によれば、上記の構造となすことにより、ダイヤ
モンド膜の形成を刃部を含む要部に限定することができ
、かつ、ダイヤモンド膜を小さい面積に制御できるため
、膜の均一化が容易となることから、剥離等の問題を解
決することができる。According to the present invention, with the above structure, the formation of the diamond film can be limited to the main parts including the blade part, and the diamond film can be controlled to a small area, making it easy to make the film uniform. Therefore, problems such as peeling can be solved.
それにより、切削性能としても、向上させることが可能
となる。この点に関しては後述する実施例′からさらに
明らかとなる。また、大型の工具に対しても有効的にダ
イヤモンド被覆処理を行なうことができる。Thereby, cutting performance can also be improved. This point will become clearer from Example', which will be described later. Further, even large tools can be effectively coated with diamond.
本発明における刃先部材２の基体６としては、切削用チ
ップとして、強度、靭性等機械的強度に優れた材質で、
例えばＳｉ、Ｍｏ、石英、ステンレスｅ Ａ＃Ｏａ ｔ
ｍ硬合金、 ？−、ＩＩ ｙ ） 、 ５ｉ−Ｃｏ
Ｓｌ、３Ｎ４ 、 ジルコニア等公知の材料が選択さ
れる。特に、ダイヤモンド膜との密着性を考慮すればＳ
ｉＧ 。The base body 6 of the cutting edge member 2 in the present invention is made of a material with excellent mechanical strength such as strength and toughness as a cutting tip.
For example, Si, Mo, quartz, stainless steel e A#Oa t
m hard alloy, ? -, IIy), 5i-Co
Known materials such as Sl, 3N4, and zirconia are selected. In particular, considering the adhesion with the diamond film, S
iG.
Ｓｌ ３Ｎ ４を主成分とするのが好ましい。Preferably, the main component is Sl3N4.
さらに、本発明によれば、ダイヤモンド膜６の密着性を
向上させることを目的として、基体５の成分及び炭素成
分を有する中間層を設けることができる。この中間層は
剥離の一要因となる熱膨張係数の差による内部応力を緩
和することができる。Further, according to the present invention, for the purpose of improving the adhesion of the diamond film 6, an intermediate layer containing the components of the base 5 and a carbon component can be provided. This intermediate layer can relieve internal stress due to a difference in thermal expansion coefficients, which is one of the causes of peeling.
チップ母材８としても、刃先基体と同様、公知の工具材
料が使用できるが、特にＡｊ１０３ 、 Ａｊ１０３−
Ｔｉｃ 、 Ａｍ１ｓｓ −ＺｒＯｓ 、 ５１ｓＮ
４．超硬合金、サーメット、部分安定化ジルコニア（ｐ
ｓｚ）等が好ましく、これらの中でも靭性の比較的大き
い、５ｉａＮ４ 、超硬合金、サーメッ）、ＰＳＺ、等
が好ましい。As with the tip base material 8, known tool materials can be used, but in particular Aj103, Aj103-
Tic, Am1ss-ZrOs, 51sN
4. Cemented carbide, cermet, partially stabilized zirconia (p
sz), etc. are preferred, and among these, 5iaN4, cemented carbide, cermet), PSZ, etc., which have relatively high toughness, are preferred.
なお、本発明の切削用チップの全体的形状詔よび、刃先
部材の形状は、第１図の形状に限定されるものでなく、
あらゆる形状に対応が可能である。Note that the overall shape of the cutting tip of the present invention and the shape of the cutting edge member are not limited to the shape shown in FIG.
Can be applied to any shape.
例えば、刃先部材３に凸部、チップ母材に凹部を形成し
、両者を嵌合するようになすこともできる。For example, it is also possible to form a convex part on the cutting edge member 3 and a concave part on the tip base material so that the two fit together.
また、切削用チップＩＫ詔いて刃先４を複数有する場合
Ｋｍいても、各刃先部を同様にして、ダイヤモンド被覆
処理を行なうことができる。Further, even if the cutting tip IK has a plurality of cutting edges 4, each cutting edge portion can be coated with diamond in the same manner.
な詔刃先部材３の形状を決定する場合、チップ自体がホ
ルダー等の支持部材により支持される部位を含まない事
が重要である。これは、ホルダー等による支持の際、そ
の応力によってダイヤモンド膜が剥離するのを防止する
ためである。 ′よって、第１図に＃ける態様では、
支持開口８を除いた部位で、刃先部材３の形状が決定さ
れている。When determining the shape of the blade tip member 3, it is important that the tip itself does not include a portion supported by a support member such as a holder. This is to prevent the diamond film from peeling off due to stress when supported by a holder or the like. 'Therefore, in the embodiment shown in Figure 1,
The shape of the cutting edge member 3 is determined at a portion other than the support opening 8.
本発明の切削用チップを製造する際には、まず、刃先基
体、チップ母材の形状の焼結体を製造した後、次に刃先
基体に対して、熱ｃｖｐ法、プラズマＣＶＤ法、イオン
ビーム法等の気相成長法により、ダイヤモンド膜を形成
させる。この気相成長法によれば、被覆される基体の特
にコーナ一部分にダイヤモンドが生成されやすいことか
ら、工具等の被覆には特に有効である。これら、気相成
長法のうち、例えばプラズマＣＶＤ法を例にとると、反
応室内に前述の所望の材質から成る基体４を配置し、反
応室内に所定の割合の次化水素（ＣＨ４）、および水素
（Ｈ２）の混合ガスを導入し、高周波またはマイクロ波
をかけて、プラズマを誘発させ、この状態を数時間維持
させると基体上にダイヤモンド膜が生成される。この時
刃先用基体５を小さくするほど、被覆面積が小さくなり
被覆処理毎の処理個数を増加させることができ、量産化
ができるとともに、最終的に得られるチップの切削性能
のバラツキを低減することができ、製品としての安定性
を高めることができる。また、反応槽内に設置する際、
基体５が例えば、第１図に示すような三角柱である場合
、反応室内での配置を第２図に示すように、後にチップ
母材８に接合する際の接合面の１つ（第１図中５ａ ）
同志を背中合わせで配置すると、ダイヤモンド膜の不必
要な面への生成を抑えるとともに、基体５の刃先４への
ダイヤモンドの生成を助長することができる。When manufacturing the cutting tip of the present invention, first, a sintered body in the shape of a cutting edge base material and a chip base material is manufactured, and then the cutting edge base material is processed by thermal CVP method, plasma CVD method, ion beam method, etc. A diamond film is formed by a vapor phase growth method such as a method. This vapor phase growth method is particularly effective for coating tools and the like because diamonds are likely to be formed, particularly at the corners, of the substrate to be coated. Among these vapor phase growth methods, for example, taking the plasma CVD method as an example, the substrate 4 made of the above-mentioned desired material is placed in the reaction chamber, and a predetermined proportion of hydrogen subhydride (CH4) and A mixed gas of hydrogen (H2) is introduced, high frequency waves or microwaves are applied to induce plasma, and this state is maintained for several hours to form a diamond film on the substrate. At this time, the smaller the cutting edge base 5 is, the smaller the coating area becomes, which makes it possible to increase the number of pieces processed in each coating process, allowing mass production, and reducing variations in the cutting performance of the chips finally obtained. The stability of the product can be improved. In addition, when installing in the reaction tank,
When the substrate 5 is, for example, a triangular prism as shown in FIG. 1, its arrangement in the reaction chamber is as shown in FIG. 5th grade a)
By arranging the blades back to back, it is possible to suppress the formation of a diamond film on unnecessary surfaces and to promote the formation of diamond on the cutting edge 4 of the base body 5.
しかも、ダイヤモンド膜の形成面積が小さくなることに
より、各々のダイヤモンド膜が均一に形成され、剥離を
低減することができる。Furthermore, since the area in which the diamond films are formed is reduced, each diamond film can be formed uniformly, and peeling can be reduced.
基体上に設けるダイヤモンド膜の膜厚は切削用チップと
しての性能的見地からαｌ乃至１００μｍにすることが
望ましい。The thickness of the diamond film provided on the substrate is desirably from αl to 100 μm from the viewpoint of performance as a cutting tip.
本発明では、前述した通り、ダイヤモンド膜の密着性を
向上させることを目的として基体成分及び炭素成分を有
する中間層を設けることができる。In the present invention, as described above, an intermediate layer containing a base component and a carbon component can be provided for the purpose of improving the adhesion of the diamond film.
中間層の形成にあたっては、ダイヤモンド膜の形成前に
例えば、基体として５ｉａＮ４を使用する場合はＳＩＨ
＋ 、 ＮＨａ 、 ＣＨ４を所定の割合で混合した混
合ガスを導入し、プラズマを誘発させることにより、ダ
イヤモンド及びＳｉ、ａＮ４から成る中間層を設けるこ
とができる。その後、同じ反応系で先と同様の操作を行
なうことで基体表面に中間層、ダイヤモンド膜を連続的
に設けることができる。ここで中間層は、前述した通り
基体成分及び炭素成分を有する他に密着性を向上させる
目的で第３成分、第４成分・・・−・を加え、多層構造
にすることもできる。中間層の厚みは０．０１μ調乃至
１ｆｌの範囲に設定するのが望ましく、この厚みは基体
の材料、中間層の炭素含有量や他成分含有量、及び層構
成とも関連するが、本発明者等がこれまでに繰り返し行
った実験によれば前記の範囲内に設定することにより一
段と顕著な密着性が得られた。When forming the intermediate layer, for example, if 5iaN4 is used as the substrate, SIH
An intermediate layer made of diamond, Si, and aN4 can be provided by introducing a gas mixture of +, NHa, and CH4 at a predetermined ratio and inducing plasma. Thereafter, by performing the same operation as above using the same reaction system, the intermediate layer and the diamond film can be continuously provided on the surface of the substrate. Here, the intermediate layer may have a multilayer structure by adding a third component, a fourth component, etc. for the purpose of improving adhesion in addition to having the base component and the carbon component as described above. The thickness of the intermediate layer is preferably set in the range of 0.01 μm to 1 fl, and this thickness is related to the material of the substrate, the carbon content and other component contents of the intermediate layer, and the layer structure, but the inventor According to experiments repeatedly conducted by et al., even more remarkable adhesion was obtained by setting within the above range.
更に、ダイヤモンド膜の厚みを中間層の厚み以下に設定
するのが望ましい。即ち、本発明者等が種々の実験を繰
り返し行った結果、基体材料、中間層の層構成や組成材
料にも関係するが、ダイヤモンド膜の厚みが中間層の厚
みを越えていると内部に応力が発生し易くなる傾向にあ
ることを確かめた。Furthermore, it is desirable to set the thickness of the diamond film to be less than or equal to the thickness of the intermediate layer. In other words, as a result of repeated various experiments conducted by the present inventors, it has been found that if the thickness of the diamond film exceeds the thickness of the intermediate layer, internal stress will occur, although this is related to the substrate material, the layer structure and composition of the intermediate layer. It was confirmed that there is a tendency for this to occur more easily.
ダイヤモンド膜を表面に形成した刃先部材３は、次にチ
ップ母材４の台座７に接合される。接合方法としては、
高融点金属法、酸化調法、硫化調法等公知の技術が使用
できるが、接合の際のダイヤモンド膜の黒鉛化を防ぐた
めに８００℃以下の接合温度で行なうことが必要である
。The cutting edge member 3 having a diamond film formed on its surface is then joined to the pedestal 7 of the tip base material 4. As for the joining method,
Known techniques such as the high melting point metal method, oxidation method, sulfurization method, etc. can be used, but it is necessary to perform the bonding at a temperature of 800° C. or lower to prevent graphitization of the diamond film during bonding.
本発明を次の例で説明する。The invention is illustrated by the following example.
実施例１
ｊ１１図の形状（ＴＰＧＮ Ｆ３２２ ）のチップを用
意し、刃先部材の基体として８１ａＮ４焼結体を使用し
、あらかじめ、第１図の５ａおよび５ｂの面に高融点金
属法を用いＭＯ−Ｍｎ −Ｔｉによるメタライズ化を行
なった。Example 1 A tip having the shape shown in Fig. 11 (TPGN F322) is prepared, an 81aN4 sintered body is used as the base of the cutting edge member, and the surfaces 5a and 5b in Fig. 1 are MO- Metallization was performed using Mn-Ti.
次に、反応爺内にメタライズ化された基体を配置させ、
マイクロ波プラズマＣＶＤ法で、下記条件下で膜厚７μ
ｍの多結晶質のダイヤモンド膜を形成した。Next, a metalized substrate is placed inside the reaction chamber,
By microwave plasma CVD method, the film thickness was 7μ under the following conditions.
A polycrystalline diamond film of m was formed.
得られた刃先部材を超硬合金（ＰＩＯ相当）から成るチ
ップ母材４の台座７に接合温度６００℃で、銀によりロ
ウ付けを行ない、切削用チップを得た。The obtained cutting edge member was brazed with silver to the pedestal 7 of the chip base material 4 made of cemented carbide (equivalent to PIO) at a bonding temperature of 600° C. to obtain a cutting chip.
得られた切削用チップについて、性能テストとして切削
テスト及び被覆面やダイヤモンド圧子を用いた引掻き法
による密着強度の測定を行なった。As a performance test, a cutting test was performed on the obtained cutting tip, and adhesion strength was measured by scratching the coated surface and using a diamond indenter.
ん フランク摩耗の測定
被 削 材 ； タフピッチ調
速 度 ”Ｊ 、 ５００屑／ｉ送 リ
ｆ ； （１１ａＩ／ ｒｅｖ切り込みｄ
；０．２１ＩＩＩ
時 間 ｔ ； １００ｍ（最高）Ｂ、寿命方
程式の算出
被削材としてタフピッチ鋼のかわりにＡｌ−Ｓｉ （１
８％）合金を使用し、送りｆ＝α１０ ｍ／ ｒｅｖ
、切り込みｄ＝α２０１１１１で速度Ｖを変化させ、Ｖ
Ｔ曲線の方程式を求める。な詔、ＶＴ曲線は、一般式（
１）％式％（１）
で示され、Ｘ値およびＣ値で寿命が決定され、Ｘ値が小
さい程、Ｃ値が大きい程、寿命の優れたものである。Measuring workpiece material for flank wear: Tough pitch adjustment speed ``J, 500 chips/i feed rate
f; (11aI/ rev notch d
; 0.21III Time t ; 100 m (maximum) B, calculation of life equation Al-Si (1
8%) alloy, feed f = α10 m/rev
, change the speed V with the depth of cut d=α201111, and
Find the equation of the T curve. According to the imperial edict, the VT curve is expressed by the general formula (
1) The life is determined by the X value and the C value, and the smaller the X value and the larger the C value, the better the life.
上記の測定結果は第１表に示した。またＴ１−６ｋｌ
−４Ｖ合金の切削でも焼結ダイヤモンドと同等の特性が
得られた。The above measurement results are shown in Table 1. Also T1-6kl
Characteristics equivalent to those of sintered diamond were obtained when cutting -4V alloy.
実施例２
刃先部材の基体としてＳｌ、Ｃ焼結体を使用する他は、
実施例１とまったく同様にして、切削用チップを得、実
施例１と同様に性能テストを行なったところ良好な切削
性能を示した。Example 2 In addition to using Sl and C sintered bodies as the base of the cutting edge member,
A cutting tip was obtained in exactly the same manner as in Example 1, and a performance test was conducted in the same manner as in Example 1, and it showed good cutting performance.
結果は第１表に示した。The results are shown in Table 1.
実施例８
刃先部材の基体としてＳ１Ｃを用い、あらかじめ接合面
にＭｏ −Ｍｎ −’ｆｉをメタライズした後、次の処
理を行なった。Example 8 S1C was used as the base of the cutting edge member, and after Mo-Mn-'fi was metallized on the joint surface in advance, the following treatment was performed.
度応室としての石英管の外側に高周波電流用コイルを４
回巻に形成し、その内部には９００℃の温度に設定しで
あるＳｉＧ基体を設置した。高周波プラズマＣＶＤ法に
基いて該コイルに［５６ＭＥ［ｚの高周波電流を流すと
共に石英管内部にＨ２ガス、ＣＨ４ガス及びＳｉ、ＥＩ
４ガスをそれぞれ２００ ＱＣ／ｗｉｎ。Four high-frequency current coils are installed outside the quartz tube as a reaction chamber.
It was formed into a spiral shape, and a SiG substrate set at a temperature of 900° C. was placed inside it. Based on the high-frequency plasma CVD method, a high-frequency current of [56ME[z] is passed through the coil, and H2 gas, CH4 gas, Si, EI
200 QC/win for each of the 4 gases.
２ＱＯ／ｍ及びα５００／ｌｉｎの流量で導入して全圧
ガスを１０ ＴＯｒｒ Ｋ設定し、プラズマを発生させ
た。The gas was introduced at a flow rate of 2QO/m and α500/lin, the total pressure was set at 10 TOrr K, and plasma was generated.
これを３時間続けたところ黒色の中間層が１２μｍの厚
みで形成することができた。この中間層を微あることを
確認した。When this was continued for 3 hours, a black intermediate layer with a thickness of 12 μm could be formed. It was confirmed that there was a slight amount of this intermediate layer.
次いでＨ２ガス及びＣＨ４ガスをそれぞれ２００ ｃｃ
／ｉ及び２００／ｍの流量にして全圧ガスを２０ ’ｒ
ｏｒｒに設定し、他の設定条件は何ら変更しないでプラ
ズマを発生させた。これを３時間続けたところ５μ謂の
ダイヤモンド膜の形成されたダイヤモンド被膜の刃先部
材を得た。尚、このダイヤモンド膜はＸ線回折及びＸ＃
！励起光電子分析法、オージェ電子分光のいずれによつ
Ａ結晶質ダイヤモンドが生成していることを確認した。Next, 200 cc each of H2 gas and CH4 gas
/i and 200/m flow rate and the total pressure gas is 20'r.
orr, and plasma was generated without changing any other setting conditions. When this process was continued for 3 hours, a diamond-coated cutting edge member having a so-called 5 μm diamond film formed thereon was obtained. In addition, this diamond film was analyzed by X-ray diffraction and
! It was confirmed by both excitation photoelectron analysis and Auger electron spectroscopy that A crystalline diamond was produced.
この刃先部材を接合温度６５０℃で超硬合金（Ｐ１０相
当）のチップ母材に銀ロウ付けにより、接合し、切削用
チップを得た。性能テストをおこなったところ良好な切
削性能であった。This cutting edge member was joined to a chip base material of cemented carbide (equivalent to P10) at a joining temperature of 650° C. by silver brazing to obtain a cutting chip. A performance test showed good cutting performance.
性能テスト結果は第１表に示す。Performance test results are shown in Table 1.
実施例４
基体として５１ｓＮ４を用い接合面にＭｏ −Ｍｎ −
Ｔｊ−によりメタライズした後火の操作を行なった。Ｈ
２て反応系に導入して２．４５ ＧＨｚのマイクロ波を
用い′て８０分間プラズマ発生させ、前記５ｉａＮ＋読
上に２μｍの厚みでＳｌ、Ｃ及び５ｊ−ａＮ４から成る
第１中間層を形成した。次いでＨ２ガス、ＣＨ４ガス及
び５ｊ−Ｈ４ガスをそれぞれ１００００ ／ｍ、 ２
ＱＱ ／ｍ及びｌｃｃ／＝の流量にて導入して１時間プ
ラズマ発生させ、前記第１中間層上に２μｍの厚みでダ
イヤモンド及びＳｉＣから成る第２中間層を形成した。Example 4 51sN4 was used as the base and Mo-Mn- was used on the bonding surface.
After metallizing with Tj-, a fire operation was performed. H
2 was introduced into the reaction system and plasma was generated for 80 minutes using a 2.45 GHz microwave to form a first intermediate layer consisting of Sl, C and 5j-aN4 with a thickness of 2 μm on the 5iaN+ layer. . Next, H2 gas, CH4 gas and 5j-H4 gas were each supplied at 10000/m, 2
The plasma was introduced at a flow rate of QQ /m and lcc/= to generate plasma for 1 hour to form a second intermediate layer made of diamond and SiC with a thickness of 2 μm on the first intermediate layer.
然る後、Ｈ２ガス及びＣＨ４ガスのそれぞれの流量を１
００００７ｍ及びα５０（３／ｍに設定して５声の厚み
の多結晶ダイヤモンド膜を形成した。尚、いずれの膜も
成膜中基体温度を９００℃に設定した。After that, the flow rates of each of H2 gas and CH4 gas were reduced to 1.
A polycrystalline diamond film with a thickness of 5 tones was formed by setting α50 (00007 m) and α50 (3/m). The substrate temperature during film formation was set at 900° C. for both films.
得られた刃先部材を接合温度６５０℃で超硬合金（Ｐ１
０相当）製のチップ母材に銀ロウ付けにより接合し、切
削用チップを得た。性能テストを行なったところ良好な
結果が得られた。The obtained cutting edge member was bonded to cemented carbide (P1) at a welding temperature of 650°C.
The cutting tip was bonded to a chip base material manufactured by (equivalent to 0) by silver brazing to obtain a cutting chip. When we conducted a performance test, good results were obtained.
性能テスト結果は第１表に示した。The performance test results are shown in Table 1.
実施例５
基体としてＴ１Ｃ基サーメット基体を用いて初めにＨ！
！ガス、ＴｉＣ１＋ガス及びＣｌＨ４ガスをそれぞれ１
００ｃｃ７騙、２００／−及び２ｃｃ／＝の流量で導入
して２，４５ ＧＨｚのマイクロ波によりプラズマを発
生させ、ＴＩＣＩＣ−メット基体表面に１μｍの厚みで
ＴｌＣとダイヤモンドから成る層を形成した。次いで１
５分毎にＴｉ、Ｃ１＋ガス流量を順次Ｌ５０（３／ｌｉ
ｎ。Example 5 First, H! using a T1C-based cermet substrate as the substrate!
! 1 each of TiC1+ gas and ClH4 gas
Plasma was generated by microwaves at 2.45 GHz by introducing the plasma at flow rates of 00 cc, 200/-, and 2 cc/= to form a layer of TLC and diamond with a thickness of 1 μm on the surface of the TICIC-Met substrate. then 1
Ti, C1+ gas flow rate is changed to L50 (3/li) every 5 minutes.
n.
ｌ ｃｃ／、ｉＨ，α５ＱＯ／ｍにまで減らし他のガス
流量はそのままにしながら段階的にダイヤモンド含有比
率を大きくした層をそれぞれ２μｍ、２μｙｅｔ、 １
μ調の厚みで形成して中間層とした。然る後、ＴｉＣｌ
４ガス流量を零として最上層に６μｍの多結晶ダイヤモ
ンド膜を形成した。The diamond content ratio was reduced to 1 cc/, iH, and α5QO/m, and the diamond content ratio was gradually increased while keeping the other gas flow rates unchanged.
The intermediate layer was formed to have a μ-like thickness. After that, TiCl
A polycrystalline diamond film with a thickness of 6 μm was formed on the top layer by setting the gas flow rate to zero.
得られた刃先部材を実施例１と同様にして接合し、切削
用チップを得た。性能テスト結果は第１表に示した。The obtained cutting edge member was joined in the same manner as in Example 1 to obtain a cutting tip. The performance test results are shown in Table 1.
実施例６
刃先部材の基体として超硬合金を用いて次の操作を行な
った。Example 6 The following operation was performed using cemented carbide as the base of the cutting edge member.
・ 高周波電源によりＷＣをターゲットとしてスパッタ
リングを行うべり、Ｈ！ガス及びＭ°ガスをそれぞれ８
０ ＱＱｌｉ 、 ２０００／ｍに設定して導入した。- Sputtering using a high frequency power source with WC as a target, H! gas and M° gas each at 8
It was introduced with the setting set to 0 QQli and 2000/m.
次いでこのスパッタリングによってＷＣが超硬合金基体
上に蒸着し始めるとかガスの流量を１ｏｃｃ／ｈｏｕｒ
（７）速さで減らすと共にＣＨ４ガスをＩ ＣＯ／ｈ。Then, by this sputtering, WC begins to be deposited on the cemented carbide substrate, and the gas flow rate is increased to 1 occ/hour.
(7) Reduce CH4 gas at a speed of I CO/h.
−”の速さで増やしながら導入することＫよりＷＣとダ
イヤモンドから成る中間層を形成した。次に高周波プラ
ズマＣＶＤ法に基いて高周波電源よりコイルに１ａ５６
ＭＨｚの高周波電流を流すと共にＨ８ガス及びＣＨ４
ガスをそれぞれ１００ ＱＱｌｉ及びｇｅｅ／ｉの流量
にて導入すると該中間層上に６μ解の多結晶ダイヤモン
ド膜が形成できた。An intermediate layer consisting of WC and diamond was formed by introducing K while increasing the amount of K at a speed of 1.5 mm.Next, a 1a56
While passing a high frequency current of MHz, H8 gas and CH4
When gases were introduced at flow rates of 100 QQli and gee/i, respectively, a 6 μm polycrystalline diamond film was formed on the intermediate layer.
得られた刃先部材を実施例１と同様にして接合し切削用
チップを得た。性能テストを行なったところ良好な結果
が得られた。結果は第１表に示した。The obtained cutting edge member was joined in the same manner as in Example 1 to obtain a cutting tip. When we conducted a performance test, good results were obtained. The results are shown in Table 1.
実施例７ 基体としてＭＯを用いて、次の操作を行なった。Example 7 The following operation was performed using MO as a substrate.
初めにＨｇガス、Ｍｏ１ｌｓガス及びＣＨ４ガスをそれ
ぞれ２５０００７ｍ 、’ １０００７ｍ及びｌ ＱＱ
ｌｉの流量で導入して１４５ ＧＨｚのマイクロ波によ
りプラズマを発生させ、次いで１０分毎にＭＯＣＩ５ガ
スを１５ ＱＱｌｉずつ減少させるとともにＣＥ（４ガ
スを約α１５０Ｑ／’ｉずつ増加して最終的に１時間後
ＭＯＣＩｇガス及びＣＨ４ガスのそれぞれの流量を１ｃ
ｃ／ｘｉ及びｇ ＱＱｌｉにして中間層を形成した。然
る後、Ｈｇガス及びＣＨ４ガスのそれぞれの流量を１０
０ ＱＱ／ｌｉｎ及び２ｃｃ／−に設定して６μ調の多
結晶ダイヤモンド膜を形成した。First, Hg gas, Mo1ls gas and CH4 gas are 250007m, '10007m and lQQ, respectively.
Plasma was generated by microwaves at 145 GHz by introducing the gas at a flow rate of 145 GHz, and then the MOCI5 gas was decreased by 15 QQli every 10 minutes, and the CE (4 gases was increased by about α150Q/'i, and finally 1 After time, the flow rates of MOCIg gas and CH4 gas were increased to 1c.
An intermediate layer was formed using c/xi and g QQli. After that, the flow rates of each of Hg gas and CH4 gas were increased to 10
A polycrystalline diamond film with a 6μ tone was formed by setting 0 QQ/lin and 2 cc/-.
得られた刃先部材を接合温度６５０℃で、超硬製の工具
基材に銀ロウ付けＫより接合し、切削用チップを得た。The obtained cutting edge member was bonded to a carbide tool base material by silver brazing K at a bonding temperature of 650° C. to obtain a cutting tip.
性能テストを行なったところ良好な性能を示した。A performance test showed good performance.
実施例８ 基体としてステンレスを用い次の操作を行なった。Example 8 The following operations were performed using stainless steel as the substrate.
実施例６に詔いて、ターゲットをＦｅとし、そして実施
例６と同じ操作方法を行いながらＨ！ガス及びかガスを
それぞれ８０ ＱＱ ／ｉ、 ２０ ＱＱ ／ｍにして
導入しスパッタリングを行った。次いでこのスパッタリ
ングによってＦｅがステンレス基体上に蒸着し始めると
かガスの流量を１０ ＱＣ／ ｋｌｏｕｒの速さで減ら
すと共にＣＨ４ガスをｌ Ｑ（３／ ｈｏｕｒの速さで
増やしながら導入することによりＦｅ 、 ＦｅＣｘ及
びダイヤモンドから成□る中間層を形成した。その後、
高周波プラズマＣＶＤ法に基いて高周波電源よりコイル
に１＆５６ ＭＨｚの高周波電流を流すと共にガス導入
口よりＨ８ガス及びＣＨ４ガスをそれぞれ１（１）ＱＱ
／ｍ及び２ＱＱ／ｖｉａの流量にて導入すると該中間
層上に６μｍの多結晶ダイヤモンド膜が形成できた。Using the same method as in Example 6, setting the target to Fe, and performing the same operation method as in Example 6, H! Sputtering was performed by introducing gas and gas at a rate of 80 QQ/i and 20 QQ/m, respectively. Then, when Fe starts to be deposited on the stainless steel substrate by this sputtering, Fe, FeC and an intermediate layer made of diamond.
Based on the high-frequency plasma CVD method, a high-frequency current of 1 & 56 MHz is passed through the coil from a high-frequency power supply, and H8 gas and CH4 gas are respectively supplied from the gas inlet at 1 (1) QQ.
When introduced at a flow rate of /m and 2QQ/via, a 6 μm polycrystalline diamond film could be formed on the intermediate layer.
得られた刃先部材を接合温度６５０℃で超硬合金製のチ
ップ母材に銀ロウ付けにより接合し、切削用チップを得
た。性能テストを行なったところ良好な結果であった。The obtained cutting edge member was joined to a cemented carbide chip base material by silver brazing at a joining temperature of 650° C. to obtain a cutting chip. A performance test showed good results.
結果は第１表に示す。The results are shown in Table 1.
実施例９
実施例１の方法で刃先部材を製造する際反応室内に基体
を第２図のよう（複数個配置させ、実施例１と同一条件
下で複数の基体に同時に７μｍのダイヤモンド膜の形成
を行ない刃先部材を得た。Example 9 When manufacturing a cutting edge member by the method of Example 1, a plurality of substrates were arranged in the reaction chamber as shown in Figure 2, and a 7 μm diamond film was formed on the plurality of substrates simultaneously under the same conditions as Example 1. A cutting edge member was obtained.
得られた刃先部材を実施例１と同一の材質から成る複数
の切削用チップを得た。A plurality of cutting tips made of the same material as in Example 1 were obtained from the obtained cutting edge member.
この複数の切削用チップの切削テストを行なったところ
、すべてが第１表に示す結果と変らず、性能が均一であ
ることが確認された。When a cutting test was conducted using a plurality of these cutting chips, it was confirmed that all the results were the same as those shown in Table 1, and that the performance was uniform.
比較例１
実施例１と同じ形状の５ｉＪＩＮ４焼結体であって、刃
先部材、チップ母材に分割されない通常の工具−に実施
例１と同じ条件下で５μｍの多結晶ダイヤモンド被覆を
行ない、切削用チップを得た。Comparative Example 1 A 5iJIN4 sintered body having the same shape as Example 1, which is a normal tool that is not divided into a cutting edge member and a tip base material, was coated with 5 μm of polycrystalline diamond under the same conditions as Example 1, and was cut. I got a chip for it.
この切削用チップを実施例１と同様の性能テストを行な
ったところ、実施例１と比較して、特に寿命の点で劣っ
てｂた。When this cutting tip was subjected to the same performance test as in Example 1, it was found to be inferior to Example 1, especially in terms of life.
結果は第１表に示した。The results are shown in Table 1.
比較例２
超硬合金（ＷＣ９４％、Ｃｏ ６％）からなる実施例１
と同形状の切削用チップを用いて、同様の性能テストを
行なったところ、本発明よりも劣った性能を示した。結
果は第１表に示す。Comparative Example 2 Example 1 made of cemented carbide (WC94%, Co 6%)
When a similar performance test was conducted using a cutting tip with the same shape as that of the present invention, the performance was inferior to that of the present invention. The results are shown in Table 1.
参考例
実施例１の工具と同形状のＳｉＮ＊焼結体から成 □す
、切削用刃部に超高圧、超高温下で焼結されたダイヤモ
ンド焼結体を接合してなる切削用チップを用いて、同様
の切削テストを行なったところ良好な結果が得られた。Reference Example A cutting tip made of a SiN* sintered body having the same shape as the tool of Example 1, and a diamond sintered body sintered under ultra-high pressure and ultra-high temperature bonded to the cutting blade. When a similar cutting test was conducted using this material, good results were obtained.
結果は第１表に示す。The results are shown in Table 1.
第１表 注） 圧子荷重は最高５０ｋｇまで行なった。Table 1 Note) The indenter load was up to 50 kg.
（発明の効果） 。(Effect of the invention) .
本発明は、上述したように切削用チップとして刃先部材
とチップ母材とが分割される構造のものを用い、刃先部
材のみに対し、ダイヤモンド膜を形成させた構造となす
ことにより、従来のダイヤモンド被覆工具に比較しても
、性能くすぐれ、しかも量産性に優れたチップを得るこ
とができる。As described above, the present invention uses a cutting tip with a structure in which the cutting edge member and the tip base material are separated, and has a structure in which a diamond film is formed only on the cutting edge member. Compared to coated tools, it is possible to obtain chips with excellent performance and excellent mass productivity.
す、第２図は膜形成時の基体の配置を示す図である。FIG. 2 is a diagram showing the arrangement of the substrate during film formation.
ｌは切削用チップ、２は刃先部材、３はチップ母材、４
は刃部、５は刃先用基体、６はダイヤモンド膜をそれぞ
れ示す。l is a cutting tip, 2 is a cutting edge member, 3 is a tip base material, 4
5 represents the blade portion, 5 represents the base for the blade edge, and 6 represents the diamond film.
Claims (4)
材とにより構成され、前記刃先部材には少なくとも刃部
に直接あるいは中間層を介してダイヤモンド膜が形成さ
れていることを特徴とする切削用チップ。(1) It is composed of a cutting edge member and a chip base material that joins and supports the cutting edge member, and the cutting edge member is characterized in that a diamond film is formed on at least the blade portion directly or via an intermediate layer. Cutting tip.
みを有することを特徴とする特許請求の範囲第１項記載
の切削用チップ。(2) The cutting tip according to claim 1, wherein the diamond film has a thickness of 0.1 to 100 μm.
を主体として成ることを特徴とする特許請求の範囲第１
項記載の切削用チップ。(3) Claim 1, wherein the cutting edge member is mainly made of either silicon carbide or nitrogen nitride.
Cutting tip as described in section.
たものであることを特徴とする特許請求の範囲第１項記
載の切削用チップ。(4) The cutting tip according to claim 1, wherein the diamond film is formed by a vapor phase growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59279175A JPH0710443B2 (en) | 1984-12-28 | 1984-12-28 | Cutting tip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59279175A JPH0710443B2 (en) | 1984-12-28 | 1984-12-28 | Cutting tip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61159302A true JPS61159302A (en) | 1986-07-19 |
| JPH0710443B2 JPH0710443B2 (en) | 1995-02-08 |
Family
ID=17607488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59279175A Expired - Lifetime JPH0710443B2 (en) | 1984-12-28 | 1984-12-28 | Cutting tip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0710443B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6392345A (en) * | 1986-10-07 | 1988-04-22 | 信越化学工業株式会社 | Medical incision and pressure insert instrument and production thereof |
| JPH02224349A (en) * | 1989-02-27 | 1990-09-06 | Sumitomo Electric Ind Ltd | Bonding tool |
| JPH0367602A (en) * | 1989-08-07 | 1991-03-22 | Nachi Fujikoshi Corp | Diamond-covered blade for lumber working |
| EP0428759A1 (en) * | 1989-06-15 | 1991-05-29 | Idemitsu Petrochemical Co. Ltd. | Diamond-coated member |
| EP0504424A1 (en) * | 1990-10-05 | 1992-09-23 | Sumitomo Electric Industries, Ltd. | Hard material clad with diamond, throwaway chip, and method of making said material and chip |
| US5855974A (en) * | 1993-10-25 | 1999-01-05 | Ford Global Technologies, Inc. | Method of producing CVD diamond coated scribing wheels |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5669305A (en) * | 1979-11-07 | 1981-06-10 | Mitsubishi Metal Corp | Composite sintered part piece for cutting edge of cutting tip |
| JPS59170262A (en) * | 1983-03-14 | 1984-09-26 | Mitsubishi Metal Corp | Surface-coated tool member with superior wear resistance |
-
1984
- 1984-12-28 JP JP59279175A patent/JPH0710443B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5669305A (en) * | 1979-11-07 | 1981-06-10 | Mitsubishi Metal Corp | Composite sintered part piece for cutting edge of cutting tip |
| JPS59170262A (en) * | 1983-03-14 | 1984-09-26 | Mitsubishi Metal Corp | Surface-coated tool member with superior wear resistance |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6392345A (en) * | 1986-10-07 | 1988-04-22 | 信越化学工業株式会社 | Medical incision and pressure insert instrument and production thereof |
| JPH02224349A (en) * | 1989-02-27 | 1990-09-06 | Sumitomo Electric Ind Ltd | Bonding tool |
| EP0428759A1 (en) * | 1989-06-15 | 1991-05-29 | Idemitsu Petrochemical Co. Ltd. | Diamond-coated member |
| US5318836A (en) * | 1989-06-15 | 1994-06-07 | Ngk Spark Plug Company Limited | Diamond-coated body |
| JPH0367602A (en) * | 1989-08-07 | 1991-03-22 | Nachi Fujikoshi Corp | Diamond-covered blade for lumber working |
| EP0504424A1 (en) * | 1990-10-05 | 1992-09-23 | Sumitomo Electric Industries, Ltd. | Hard material clad with diamond, throwaway chip, and method of making said material and chip |
| EP0504424A4 (en) * | 1990-10-05 | 1994-08-17 | Sumitomo Electric Industries | Hard material clad with diamond, throwaway chip, and method of making said material and chip |
| US5855974A (en) * | 1993-10-25 | 1999-01-05 | Ford Global Technologies, Inc. | Method of producing CVD diamond coated scribing wheels |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0710443B2 (en) | 1995-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5197651A (en) | Bonding tool | |
| EP0413834B1 (en) | Diamond-covered member and process for producing the same | |
| US5370299A (en) | Bonding tool having diamond head and method of manufacturing the same | |
| JPH0535221B2 (en) | ||
| JPH0566358B2 (en) | ||
| JPH03197677A (en) | Diamond-coated tool and its production | |
| JPS61159302A (en) | Cutting tip | |
| JPS59170262A (en) | Surface-coated tool member with superior wear resistance | |
| EP0549801A1 (en) | Diamond-covered member and production thereof | |
| JPH04157157A (en) | Production of artificial diamond coated material | |
| US5567522A (en) | Diamond cutting tool and method of manufacturing the same | |
| JPS61163275A (en) | Coated hard member | |
| JPH02267284A (en) | Polycrystalline diamond object and production thereof by vapor synthesis method | |
| JP3260156B2 (en) | Method for producing diamond-coated member | |
| JPH08151297A (en) | Production of diamond | |
| JPH02223437A (en) | Polycrystalline diamond material and manufacture thereof | |
| JPH03295552A (en) | Dental cutting tool and its manufacture | |
| JPH04261703A (en) | Polycrystal diamond cutting tool | |
| JP3314119B2 (en) | Diamond composite member and method of manufacturing the same | |
| JPH0623431B2 (en) | Hard coating coated cutting tool parts | |
| JPH0774449B2 (en) | Method for producing diamond-coated hydrogen-brittle metal | |
| JPS6257802A (en) | Parts coated with hard carbon | |
| JP3167371B2 (en) | Peel-resistant diamond-coated sintered alloy and method for producing the same | |
| JPH05148089A (en) | Diamond film for cutting tool | |
| JPH05299478A (en) | Bonding tool and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |