JPS61134606A - Semiconductor producing device - Google Patents
Semiconductor producing deviceInfo
- Publication number
- JPS61134606A JPS61134606A JP59256793A JP25679384A JPS61134606A JP S61134606 A JPS61134606 A JP S61134606A JP 59256793 A JP59256793 A JP 59256793A JP 25679384 A JP25679384 A JP 25679384A JP S61134606 A JPS61134606 A JP S61134606A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- pattern
- dark field
- detected
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000003708 edge detection Methods 0.000 abstract description 8
- 238000007493 shaping process Methods 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体製造装置に関し、特に投影転写によ
るレジストパターンニングに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to resist patterning by projection transfer.
第２図に従来のレジストパターンニングにおいてマスク
パターンをウェハへ転写する装置の基本的な構成を示す
、第２図において、１は、ウェハ、２ばウェハ１に形成
すべきパターン、３はウェハ１及びウェハ１上のパター
ン２に投影するレーザー光、４は４５°に反射されたレ
ーザー光を検出する暗視野検出器、５は信号波形整形回
路、６は増幅器である。なお各回路５．６の下部に該回
路５．６の信号波形を示す。FIG. 2 shows the basic configuration of an apparatus for transferring a mask pattern to a wafer in conventional resist patterning. In FIG. 2, 1 is a wafer, 2 is a pattern to be formed on the wafer 1, and 3 is a wafer and a laser beam projected onto a pattern 2 on the wafer 1, 4 a dark field detector for detecting the laser beam reflected at 45°, 5 a signal waveform shaping circuit, and 6 an amplifier. Note that the signal waveform of each circuit 5.6 is shown below each circuit 5.6.
以下、従来例の動作について説明する。この従来の装置
において、パターン２を付着したウェハ１にレーザー光
３を走査させ、走査され入射したレーザー光に対しパタ
ーンのエツジから４５°に反射されたレーザー光を検出
器４で検出する。検出された信号は信号波形整形回路５
を通り、所望のパルス波とされ、次段の増幅器６を通っ
て出力され、所望のパターンエツジ検出信号となる。The operation of the conventional example will be explained below. In this conventional apparatus, a laser beam 3 is scanned over a wafer 1 having a pattern 2 attached thereto, and a detector 4 detects the laser beam reflected at 45 degrees from the edge of the pattern with respect to the scanned and incident laser beam. The detected signal is sent to the signal waveform shaping circuit 5
The pulse wave is converted into a desired pulse wave, which is output through the next stage amplifier 6, and becomes a desired pattern edge detection signal.
しかるに従来のこの装置は、暗視野検出方式を用いてお
り、ウェハ１上に形成されたパターン２のエツジ部に対
し４５°角でレーザー光３が反射しなければならないか
ら、エツジ部の形状に規則性を持たせることが必要で、
エツジ形状の乱れによって出力に変動が生じ、エツジ検
出精度が低下するという欠点があった。However, this conventional device uses a dark field detection method, and the laser beam 3 must be reflected at a 45° angle to the edge of the pattern 2 formed on the wafer 1. It is necessary to have regularity,
Disturbances in the edge shape cause fluctuations in output, resulting in a reduction in edge detection accuracy.
この発明は、このような問題点を解消するためになされ
たもので、パターンエツジ部の形状が不規則な場合にも
、正確にパターンエツジを検出できる半導体製造装置を
得ることを目的としている。The present invention has been made to solve these problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can accurately detect pattern edges even when the shape of the pattern edge portion is irregular.
Ｃ問題点を解決するための手段〕
本発明に係る半導体製造装置は、パターンのエツジ部の
検出に従来の暗視野方式による検出器だけでなく、１８
０°逆方向に反射された信号を検出する方式、即ち明視
野方式の検出器を設は両検出器の出力からパターンのエ
ツジを検出判定するようにしたものである。Means for Solving Problem C] The semiconductor manufacturing apparatus according to the present invention uses not only a conventional dark field detector to detect the edge portion of a pattern, but also a detector using 18
A bright-field detector is used to detect the signal reflected in the 0° reverse direction, and the edges of the pattern are detected and determined from the outputs of both detectors.
この発明においては、暗視野検出器と明視野検出器の双
方の検出器を併用しているから、パターンエツジの形状
の乱れがあっても、エツジ検出出力に変動が生じず、エ
ツジ検出精度が向上する。In this invention, since both a dark-field detector and a bright-field detector are used together, even if there is a disturbance in the shape of a pattern edge, there is no change in the edge detection output, and the edge detection accuracy is improved. improves.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例による半導体製造装置を示す
。第１図において、第２図と同一符号は同一のものを示
し、１０はハーフミラ−１９はハーフミラ−１０によっ
て反射されたレーザー光３を検出する明視野検出器、５
ａ、５ｂはそれぞれ暗視野検出器４．明視野検出器９の
出力を波形整形する信号波形整形回路、７はインバータ
回路、８は信号波形整形回路５ａ及びインバータ回路７
からの出力の論理積をとる論理積回路であり、６は増幅
器である。なお各回路の下部又は上部に該回路の信号波
形を示す。FIG. 1 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 1, the same symbols as those in FIG.
a, 5b are dark field detectors 4. A signal waveform shaping circuit that shapes the output of the bright field detector 9; 7 is an inverter circuit; 8 is a signal waveform shaping circuit 5a and the inverter circuit 7;
6 is an amplifier. Note that the signal waveform of each circuit is shown at the bottom or top of each circuit.
次に動作について説明する。同図において、パターン２
を付着させたウェハ１上にレーザー光３１を走査させ、
レーザー光３のうちパターンエツジ部に当うたものは従
来とおり４５°角に反射し、暗視野検出器４で暗視野信
号として検出される。Next, the operation will be explained. In the same figure, pattern 2
A laser beam 31 is scanned over the wafer 1 on which the
The laser beam 3 that hits the pattern edge portion is reflected at a 45° angle, as in the conventional art, and is detected by the dark field detector 4 as a dark field signal.
そして本発明ではさらにパターン２上で正反射したレー
ザー光がハーフミラ−１０を通して明視野検出器９で明
視野信号として検出される。検出器４と検出器９で得た
両信号は信号波形整形回路５ａ、５ｂを通して波形整形
される。その結果、暗視野信号として検出される信号は
照射光がパターンエツジ部に照射されたときのみ暗視野
検出器４から出力され、°明視野検出器９ではパターン
エツジ部からの反射光は該検出器９には入らず、これが
負のパルス信号として検出される。そしてこの明視野検
出器９の検出信号はインバータ回路７を通って暗視野信
号と同じ正のパルス信号とされ、この両信号が同時に入
力されたときのみ、論理積回路８からのパターンエツジ
検出信号が増幅器６に送られ、増幅され出力される。Further, in the present invention, the laser beam specularly reflected on the pattern 2 passes through the half mirror 10 and is detected by the bright field detector 9 as a bright field signal. Both signals obtained by the detectors 4 and 9 are waveform-shaped through signal waveform shaping circuits 5a and 5b. As a result, a signal detected as a dark field signal is output from the dark field detector 4 only when the pattern edge is irradiated with the irradiation light, and the bright field detector 9 detects the reflected light from the pattern edge. The signal does not enter the device 9 and is detected as a negative pulse signal. The detection signal of the bright field detector 9 passes through the inverter circuit 7 and becomes the same positive pulse signal as the dark field signal, and only when these two signals are input at the same time, the pattern edge detection signal from the AND circuit 8 is output. is sent to the amplifier 6, amplified and output.
なお、上記実施例では投影転写によるレジストパターン
ニングの際、下地パターンエツジ検出を行なう装置とし
て説明したが、他にもパターンの寸法等を測定する装置
にも本発明は同様に実施できる。Although the above embodiment has been described as an apparatus for detecting base pattern edges during resist patterning by projection transfer, the present invention can be similarly implemented in other apparatuses for measuring pattern dimensions and the like.
以上のように、この発明に係る半導体製造装置によれば
、パターンエツジ検出において、パターン照射したレー
ザー光の１反射検出を暗視野信号と明視野信号の両方を
同時に検出して行なうようにしたので、パターンエツジ
検出の検出精度の高い半導体製造装置が得られる効果が
ある。As described above, according to the semiconductor manufacturing apparatus according to the present invention, in pattern edge detection, one reflection of the laser beam irradiated with the pattern is detected by simultaneously detecting both the dark field signal and the bright field signal. , there is an effect that a semiconductor manufacturing apparatus with high detection precision of pattern edge detection can be obtained.
第１図は本発明の実施例による半導体製造装置を示す図
、第２図は従来の半導体製造装置を示す図である。
１・・・ウェハ、２・・・マスクパターン、３・・・レ
ーザー光、４・・・暗視野検出器、９・・・明視野検出
器、ｌＯ・・・ハーフミラ−０
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a diagram showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1...Wafer, 2...Mask pattern, 3...Laser light, 4...Dark field detector, 9...Bright field detector, lO...Half mirror-0 Note that the same symbols are used in the drawings indicates the same or equivalent part.
Claims (2)
いて、パターンへの投影光源の照射光が照射する方向と
１８０°逆方向に反射されてくる反射光を検出する明視
野検出器と、上記反射光と異なる角度に反射する光を検
出する暗視野検出器と、上記両検出器の出力信号の論理
積をとる論理積回路とを備えたことを特徴とする半導体
製造装置。(1) In a semiconductor manufacturing device that detects a semiconductor pattern, a bright field detector that detects reflected light that is reflected in a direction 180 degrees opposite to the direction in which the pattern is irradiated with light from a projection light source; 1. A semiconductor manufacturing apparatus comprising: a dark-field detector that detects light reflected at different angles; and an AND circuit that ANDs output signals of both of the detectors.
特許請求の範囲第１項記載の半導体製造装置。(2) The semiconductor manufacturing apparatus according to claim 1, wherein the irradiation light is a laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256793A JPS61134606A (en) | 1984-12-05 | 1984-12-05 | Semiconductor producing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256793A JPS61134606A (en) | 1984-12-05 | 1984-12-05 | Semiconductor producing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61134606A true JPS61134606A (en) | 1986-06-21 |
Family
ID=17297516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59256793A Pending JPS61134606A (en) | 1984-12-05 | 1984-12-05 | Semiconductor producing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61134606A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887199A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for detecting photoresist damage through dark-field silicon wafer detection machine |
-
1984
- 1984-12-05 JP JP59256793A patent/JPS61134606A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887199A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for detecting photoresist damage through dark-field silicon wafer detection machine |
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