JPS61134020A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS61134020A JPS61134020A JP25665484A JP25665484A JPS61134020A JP S61134020 A JPS61134020 A JP S61134020A JP 25665484 A JP25665484 A JP 25665484A JP 25665484 A JP25665484 A JP 25665484A JP S61134020 A JPS61134020 A JP S61134020A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electron beam
- deposited
- wcl6
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010894 electron beam technology Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000001312 dry etching Methods 0.000 claims abstract description 3
- 238000000059 patterning Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 229910003091 WCl6 Inorganic materials 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 239000010937 tungsten Substances 0.000 abstract description 5
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 2
- 229920002521 macromolecule Polymers 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 5
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- WIDQNNDDTXUPAN-UHFFFAOYSA-I tungsten(v) chloride Chemical compound Cl[W](Cl)(Cl)(Cl)Cl WIDQNNDDTXUPAN-UHFFFAOYSA-I 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子ビームを用いたパターン形成方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pattern forming method using an electron beam.
超ＬＳＩレベルの高密度集積回路の製造に伴い、パター
ンの微細化が要求され、１ｐｒｎ以下の寸法を十分制御
してパターン形成することが必要となりてきておシ、こ
のためリング、７フイ一手段として、光学的方法から電
子ビームの直接描画方法へと移行してきている。第３図
（ａ）〜（Ｃ）に従来技術である電子ビームリソグラフ
ィー技術を示す。第３図（ａ）において、基板３２上に
、電子ビームに感応する、例えばＰＭＭＡ （ポリメチ
ルメタクリレート）や、Ｐ ＧＭＡ （ポリグリ７キル
メタクリレート）等の電子ビームレジスト３１をスピン
塗布し、プリベイクする０次に第３図（ｂ）として、集
束した電子ビームをレジスト３１上に照射する。レジス
ト３１内部には、その照射部に蓄積エネルギーの潜像が
形成される。With the manufacture of high-density integrated circuits at the VLSI level, finer patterns are required, and it has become necessary to form patterns with sufficient control over dimensions of 1 prn or less. As a result, there has been a shift from optical methods to direct writing methods using electron beams. FIGS. 3(a) to 3(C) show a conventional electron beam lithography technique. In FIG. 3(a), an electron beam resist 31 sensitive to electron beams, such as PMMA (polymethyl methacrylate) or PGMA (poly glycol 7-kill methacrylate), is spin-coated on a substrate 32 and prebaked. Next, as shown in FIG. 3(b), the resist 31 is irradiated with a focused electron beam. Inside the resist 31, a latent image of accumulated energy is formed at the irradiated portion.
最後に第３図（Ｃ）として、現像プロセスを経て、潜儂
部が除去される。Finally, as shown in FIG. 3(C), the latent portion is removed through a development process.
ところで、これらの電子ビーム用レジストを用いて実際
に集積回路等で使われるパターンを形成する場合に、近
接効果と現像時にウェットプロセスが必要であることが
大きな問題となっていた。By the way, when using these electron beam resists to form patterns actually used in integrated circuits, etc., the proximity effect and the necessity of a wet process during development have become major problems.
すなわち、電子ビームが照射されると、主に基板３２の
表面に発生した２次電子によりレジスト中で散乱された
領域のレジスト感度が変化するという近接効果と呼ばれ
る現象が生じ、この効果がパターンの微細化と共に顕著
となシ、制御性や解像度に支障をきたしていた。又、現
像がウェットプロセスであるため、歩留υの点でドライ
プロセス化が望まれている。以上述べた様に従来の電子
ビームリソグラフィー技術では、近接効果によ）パター
ン精度に問題があり、又、ウェットプロセスによる歩留
シの低下の問題があった。That is, when an electron beam is irradiated, a phenomenon called the proximity effect occurs in which the resist sensitivity changes in the area where the secondary electrons generated on the surface of the substrate 32 are scattered in the resist, and this effect causes a change in the pattern. As miniaturization progresses, this becomes more noticeable, causing problems in controllability and resolution. Furthermore, since development is a wet process, a dry process is desired from the viewpoint of yield υ. As described above, the conventional electron beam lithography technique has problems with pattern accuracy (due to the proximity effect) and a decrease in yield due to the wet process.
本発明は、電子ビームデボジシラン効果を微細加工技術
に適用し、電子ビームによる直接微細加工を行うパター
ン形成方法を提供するものである。The present invention applies the electron beam debodisilane effect to microfabrication technology to provide a pattern forming method that directly performs microfabrication using an electron beam.
本発明は、被加工材を表面（備えた基板上に有機高分子
膜を形成し、少なくとも堆積させるべき材料を構成元素
として含んだガスを被堆積基板上に流し、基板の所望の
部分に電子ビームを照射して前記材料を基板上に堆積し
てバターニングし、次いでこのパターンをマスクとして
前記高分子膜を酸素ドライエツチングすることを特徴と
するパターン形成方法である。In the present invention, an organic polymer film is formed on a substrate with a workpiece material on the surface (surface), a gas containing at least the material to be deposited as a constituent element is flowed onto the substrate to be deposited, and a desired part of the substrate is exposed to electrons. This pattern forming method is characterized in that the material is deposited on a substrate by irradiation with a beam and patterned, and then the polymer film is dry-etched with oxygen using this pattern as a mask.
以下、本発明について、実施例を示す図面を参照して説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to drawings showing embodiments.
第１図（ａ）〜（Ｃ）は一実施例を工程屓に示す図であ
る。第１図において、基板１３上にＡＺレジストやポリ
イミドの様な有機高分子膜１２を０．５〜２μｍの厚さ
に塗布し、２５０℃、６０分程度にベイクする０次に第
１図伽）のように大塩化タングステン（ＷＣｌ６）ガス
を有機膜１２上に流し、且つ有機膜１２上の所望の部分
に電子ビームを照射し、タングステン（Ｗ）のパターン
１１を形成する。次に、第１図（ｃ）において、バター
ニングされたタングステンパターンをマスクとして酸素
リアクティブスパッターエツチングによ）有機膜１２を
エツチングする。FIGS. 1(a) to 1(C) are diagrams showing one embodiment at the step of the process. In FIG. 1, an organic polymer film 12 such as AZ resist or polyimide is coated on a substrate 13 to a thickness of 0.5 to 2 μm and baked at 250° C. for about 60 minutes. ), a large tungsten chloride (WCl6) gas is caused to flow over the organic film 12, and a desired portion of the organic film 12 is irradiated with an electron beam to form a tungsten (W) pattern 11. Next, in FIG. 1(c), the organic film 12 is etched by oxygen reactive sputter etching using the patterned tungsten pattern as a mask.
第２図は第１図（ｂ）の工程に用いる電子ビームデポジ
ション装置の構成図である。本装置は電子ビーム照射系
２１０と、試料室２０８と、副試料室２０６と雰囲気ガ
ス材料収納室２０１とから構成されている。本実施例に
おいてはタングステンＷを構成元素として含む大塩化タ
ングステンＷｅｂ、を雰囲気ガスとして用い、集束され
た電子ビーム照射により基板上にＷをデポジションさせ
た。ＷＣｌ６２０２を雰囲気ガス材料収納室２０１に入
れ、Ｗをデポジションさせる基板２０５を試料台２０４
にセットする。FIG. 2 is a block diagram of an electron beam deposition apparatus used in the step of FIG. 1(b). This apparatus is composed of an electron beam irradiation system 210, a sample chamber 208, a sub-sample chamber 206, and an atmospheric gas material storage chamber 201. In this example, a large tungsten chloride web containing tungsten W as a constituent element was used as an atmospheric gas, and W was deposited on the substrate by focused electron beam irradiation. WCl6202 is placed in the atmosphere gas material storage chamber 201, and the substrate 205 on which W is to be deposited is placed on the sample stage 204.
Set to .
電子ビーム照射系２１０と試料室２０８を１０−’Ｔｏ
ｒｒ程度以上の高真空に排気する。副試料室２０６に設
けたピンホール２０７は副試料皇２０６内部と外部との
差圧を保つためと、電子ビーム２１２をデポジションさ
せる基板２０５上に照射するための通路である。The electron beam irradiation system 210 and the sample chamber 208 are
Evacuate to a high vacuum of about rr or higher. A pinhole 207 provided in the sub-sample chamber 206 is a passage for maintaining a pressure difference between the inside and outside of the sub-sample chamber 206 and for irradiating the electron beam 212 onto the substrate 205 on which it is deposited.
副試料室２０６と雰囲気ガス材料収納室２０１とは配管
２０３によって接続されておシ、試料室２０８を真空排
気することによシ、ピンホール２０７を通して、副試料
室２０８の内部および雰囲気ガス材料収納室２０１内部
が真空排気される。雰囲気ガス材料であるＷＣＩ ６は
大気中では固体であるが真空にひくことによシ、容易に
昇華し、配管２０３を通し、副試料塞２０６内に流入し
てその内部が雰囲気ガスであるＷＣｌ、で充満される。The sub-sample chamber 206 and the atmosphere gas material storage chamber 201 are connected by a pipe 203, and by evacuating the sample chamber 208, the inside of the sub-sample chamber 208 and the atmosphere gas material storage chamber are connected through the pinhole 207. The inside of the chamber 201 is evacuated. Although WCI 6, which is an atmospheric gas material, is solid in the atmosphere, it easily sublimates by applying a vacuum, flows into the sub-sample block 206 through the pipe 203, and the inside becomes WCl, which is an atmospheric gas. , is filled with.
圧力は５ｍＴｏｒｒ程度である。この様にして、基板２
０５の雰囲気がＷＣＩ 、となシ、電子ビーム２１２を
ピンホール２０７を通して基板２０５の所望の部分に照
射することにより基板２０５表面上に吸着されたＷＣ１
，を分解する。その分解の結果ＷＣ１，はＷと塩素分子
ＣＩ２とに分かれる。Ｗは基板２０５上に析出する。一
方ＣＩ２は揮発性ガスであるので排出される。この様に
してＷが基板２０５表面の所望の部分にデポクシ１ンさ
れる。The pressure is about 5 mTorr. In this way, the board 2
When the atmosphere of 05 is WCI, the electron beam 212 is irradiated onto a desired part of the substrate 205 through the pinhole 207, and the WC1 is adsorbed onto the surface of the substrate 205.
, is decomposed. As a result of the decomposition, WC1 is separated into W and chlorine molecule CI2. W is deposited on the substrate 205. On the other hand, CI2 is a volatile gas and is therefore exhausted. In this way, W is deposited onto a desired portion of the surface of the substrate 205.
以上実施例では、タングステンのデポジションソースと
してＷＣｌ、を用いたが、ＷＣｌ５、ＷＦ、、Ｗ（ＣＯ
）。In the above embodiments, WCl was used as a tungsten deposition source, but WCl5, WF, , W(CO
).
を用いても良い。又、デポジション材としては酸素ドラ
イエツチング耐性があるクロム（Ｃｒ）等の他の金属や
シリコン（Ｓｌ）等を用いても良い。Ｃｒのデボジシｙ
７ソースとしてはＣｒ （Ｃｏ Ｈｓ ） ２やＣｒ
（Ｃｏ）６等がある。又、Ｓｌのデポジションソース
としては５ＩＣＩ４．５ＩＨ２ＣＩ２やＳ ［４等がち
る。You may also use Further, other metals such as chromium (Cr), silicon (Sl), etc., which are resistant to oxygen dry etching, may be used as the deposition material. Deposit of Cr
7 Sources include Cr (Co Hs) 2 and Cr
(Co)6 etc. In addition, 5ICI4.5IH2CI2 and S[4 are available as deposition sources for Sl.
以上のように本発明によれば、従来の電子ビームリソグ
ラフィーの問題点であった近接効果がな低下の問題を解
消できる効果を有するものである。As described above, according to the present invention, it is possible to solve the problem of a decrease in the proximity effect, which was a problem in conventional electron beam lithography.
第１図（ａ）〜（Ｃ）は、本発明の電子ビームデボジシ
ｉノによシ形成されたパターンをマスクにして、有機膜
を酸素リアクティブスパッタによりエツチングする工程
のプロセスを示す断面図、第２図は電子ビームデボジン
１ン装置の構成図、第３図は従来の電子ビームリソグラ
フィープロセスを示す断面図である。
１１・・・・・・パターン、 ｎ・・・・・・有機高分
子膜、１３・・・・・・基板、２１２・・・・・・電子
ビーム第１図
（ｃＬ）
（ｂ）
（Ｃ）1(a) to 1(C) are cross-sectional views showing the process of etching an organic film by oxygen reactive sputtering using a pattern formed by electron beam deposition according to the present invention as a mask. FIG. 2 is a block diagram of an electron beam debossing apparatus, and FIG. 3 is a sectional view showing a conventional electron beam lithography process. 11...Pattern, n...Organic polymer film, 13...Substrate, 212...Electron beam Fig. 1 (cL) (b) (C )
Claims (1)
形成し、少なくとも堆積させるべき材料を構成元素とし
て含んだガスを被堆積基板上に流し、基板の所望の部分
に電子ビームを照射して前記材料を基板上に堆積してパ
ターニングし、次いでこのパターンをマスクとして前記
高分子膜を酸素ドライエッチングすることを特徴とする
パターン形成方法。(1) An organic polymer film is formed on a substrate with a material to be processed on its surface, a gas containing at least the material to be deposited as a constituent element is flowed onto the substrate to be deposited, and an electron beam is directed onto a desired portion of the substrate. A method for forming a pattern, comprising depositing and patterning the material on a substrate by irradiating the material, and then performing oxygen dry etching on the polymer film using this pattern as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256654A JPH0680629B2 (en) | 1984-12-05 | 1984-12-05 | Pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256654A JPH0680629B2 (en) | 1984-12-05 | 1984-12-05 | Pattern formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61134020A true JPS61134020A (en) | 1986-06-21 |
| JPH0680629B2 JPH0680629B2 (en) | 1994-10-12 |
Family
ID=17295612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59256654A Expired - Lifetime JPH0680629B2 (en) | 1984-12-05 | 1984-12-05 | Pattern formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680629B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140729A (en) * | 1987-11-27 | 1989-06-01 | Sony Corp | Formation of fine pattern |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745234A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | Method for formation of microscopic pattern |
| JPS57202740A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5892216A (en) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS59132132A (en) * | 1983-01-17 | 1984-07-30 | Mitsubishi Electric Corp | Forming method of fine pattern |
-
1984
- 1984-12-05 JP JP59256654A patent/JPH0680629B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745234A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | Method for formation of microscopic pattern |
| JPS57202740A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5892216A (en) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS59132132A (en) * | 1983-01-17 | 1984-07-30 | Mitsubishi Electric Corp | Forming method of fine pattern |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140729A (en) * | 1987-11-27 | 1989-06-01 | Sony Corp | Formation of fine pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0680629B2 (en) | 1994-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5948570A (en) | Process for dry lithographic etching | |
| JPS61134019A (en) | Formation of pattern | |
| Goodyear et al. | High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon | |
| JPH0458178B2 (en) | ||
| US4661426A (en) | Process for manufacturing metal silicide photomask | |
| US5064748A (en) | Method for anisotropically hardening a protective coating for integrated circuit manufacture | |
| JPS61134020A (en) | Formation of pattern | |
| US4826754A (en) | Method for anisotropically hardening a protective coating for integrated circuit manufacture | |
| EP0518545A1 (en) | Dry lithographic etching with gaseous mixtures of oxygen and chlorine | |
| US5757879A (en) | Tungsten absorber for x-ray mask | |
| JP2909317B2 (en) | Photo mask | |
| JPS6065534A (en) | Forming method for pattern | |
| WO2005015308A2 (en) | Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal | |
| JPH03192717A (en) | X-ray exposure mask and manufacture thereof | |
| JPS6358446A (en) | Pattern forming method | |
| JP2830007B2 (en) | Pattern formation method | |
| Herbert et al. | Dry development lithography by a novel ion-beam process | |
| JPS6339893B2 (en) | ||
| JPH0518906B2 (en) | ||
| EP0268595B1 (en) | Pattern transfer process for fabricating integrated-circuit devices | |
| JPH0542810B2 (en) | ||
| JP2783973B2 (en) | Method of manufacturing mask for X-ray lithography | |
| JPH06295889A (en) | Formation of fine pattern | |
| JPH0246719A (en) | Formation of pattern | |
| JPH02976A (en) | Fine pattern forming method |