JPS61131418A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPS61131418A JPS61131418A JP25344584A JP25344584A JPS61131418A JP S61131418 A JPS61131418 A JP S61131418A JP 25344584 A JP25344584 A JP 25344584A JP 25344584 A JP25344584 A JP 25344584A JP S61131418 A JPS61131418 A JP S61131418A
- Authority
- JP
- Japan
- Prior art keywords
- glass tube
- quartz glass
- substrate
- light source
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光化学的に反応ガスを分解して薄膜を基板
上に形成させる方法（ｐｈｏｔｏ ｃｈｅｎ＋１ｃａｌ
ｖａ−ｐｏｕｒ ｄｅｐｏｓｉ１）ｏｎ ＝以下光励
起ＣＶＤ法と称す）を用いて薄膜を形成する半″・導体
製造装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is a method of photochemically decomposing a reactive gas to form a thin film on a substrate (photo chen+1 cal).
The present invention relates to a semiconductor/conductor manufacturing apparatus that forms thin films using va-pour deposition (hereinafter referred to as photo-excited CVD method).
ＣＶＤ法は集積回路装置におけるＷｉ膜形成等において
重要な技術であるが、従来のＣＶＤ法は、主として反応
ガスを加熱して化学反応を起こさせるようにしており１
、このため反応温度が高温となり、これにより形成され
る薄膜はダメージを受は易いものである。
′そこで最近、低温ＣＶＤ技術として
光励起ＣＶＤ法が注目されている。この光励起ＣＶＤ法
は、ＣＶＤのエネルギー源として光を用いるものであり
、これによれば、従来の熱励起ＣＶＤ法、プラズマＣＶ
Ｄ法等に比較して反応温度を低温にでき、薄膜へのダメ
ージも少なくすることができる。The CVD method is an important technology for forming Wi films in integrated circuit devices, etc., but the conventional CVD method mainly heats a reaction gas to cause a chemical reaction.
Therefore, the reaction temperature becomes high, and the thin film formed thereby is easily damaged.
'Therefore, recently, the photoexcitation CVD method has been attracting attention as a low-temperature CVD technology. This photo-excited CVD method uses light as an energy source for CVD, and is different from the conventional thermally-excited CVD method and plasma CVD method.
Compared to methods such as D, the reaction temperature can be lowered and damage to the thin film can be reduced.
また、一般的に光励起ＣＶＤ法では、光の強度が薄膜の
形成速度に大きな影響を与えることが知られており、基
板温度１反応ガスの組成比、圧力を一定に保った条件下
では、薄膜の形成速度は光の照射強度に比例して速（な
ることが知られている。In general, in the photo-excited CVD method, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the rate of formation of is proportional to the intensity of light irradiation.
第３図はこのような光励起ＣＶＤ法による従来の薄膜形
成装置の基本的な構成を示し、−図ドおいて、１は膜形
成時にその中が高真空状態に減圧される反応室、２は線
状ランプからなる光源、３は基板加熱用ヒータ、４はシ
ラン等の反応ガス、５−は薄膜が形成される基板、６は
光透過材からなる光入射窓、７は反応ガス供給口、８は
反応後のガス４ａを排出するためのガス排出口、９は基
板５を載せる固定台であるＩ
なお、反応室１内は一般的に高真空状態に減圧され、反
応室１の壁、光透過材からなる光入射窓６も当然この圧
力に耐えうる構造、板厚により構成されている。Figure 3 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. A light source consisting of a linear lamp, 3 a heater for heating the substrate, 4 a reactive gas such as silane, 5 - a substrate on which a thin film is formed, 6 a light entrance window made of a light transmitting material, 7 a reactive gas supply port, Reference numeral 8 denotes a gas outlet for discharging the gas 4a after the reaction, and 9 denotes a fixing table I on which the substrate 5 is placed.The interior of the reaction chamber 1 is generally reduced to a high vacuum state, and the walls of the reaction chamber 1, Naturally, the light entrance window 6 made of a light transmitting material has a structure and plate thickness that can withstand this pressure.
この装置では、反応ガス４が供給ロアから反応室１に導
入されると、該反応ガス４は入射窓６から投射された光
線により励起分解される。そしてこれにより生じた反応
生成物がヒータ３によって低温加熱された基板５上に堆
積し、該基板５上に薄膜が形成される。反応後のガス４
ａは排出口８から排出される。In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction product is deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. Gas after reaction 4
a is discharged from the discharge port 8.
この従来の半導体製造装置で−は以上のように反応室１
に光の入射窓６を設け、反応室１外に設けられた光：ａ
２から光を投射しているが、基板５上への薄膜の形成速
度を速めるためには基板５上の光の照度を強くする必要
があり、このためにはより出力の大きな光源を用いるか
、基板５と光源２の距離を縮め、基板５上の照度を強く
する必要がある。ところが、長寿命で出力の大きい実用
的な光源を求めることは現在では困難であり、また従来
の構造のまま基板５と光源２の間の距離を縮めることも
これらの間に光透過材からなる光入射窓６を、高真空の
圧力に耐えられる構造で反応室１に取り付けねばならな
いことからはなはだ困難であっ−た。In this conventional semiconductor manufacturing equipment, the reaction chamber 1 is
A light entrance window 6 is provided in the reaction chamber 1, and light provided outside the reaction chamber 1: a
However, in order to speed up the formation of a thin film on the substrate 5, it is necessary to increase the illuminance of the light on the substrate 5, and for this purpose, it is necessary to use a light source with a higher output. , it is necessary to shorten the distance between the substrate 5 and the light source 2 and increase the illuminance on the substrate 5. However, it is currently difficult to find a practical light source with a long life and high output, and it is also possible to shorten the distance between the substrate 5 and the light source 2 with the conventional structure by using a light-transmitting material between them. This was extremely difficult since the light entrance window 6 had to be installed in the reaction chamber 1 with a structure that could withstand high vacuum pressure.
また、光入射窓６に反応生成物が堆積して、いわゆる唸
りが生じ、短波長紫外線がこれを透過しにくくなるとい
う問題点があった。Further, there is a problem in that reaction products accumulate on the light entrance window 6, causing so-called buzzing, which makes it difficult for short wavelength ultraviolet rays to pass through.
この発明は、このような問題点を解消するためになされ
たもので、基板上の光の照度を高め、さらには反応生成
物の堆積による光の遮蔽の問題を解消できる半導体製造
装置を得ることを目的とするものである。This invention was made to solve these problems, and it is an object of the present invention to provide a semiconductor manufacturing device that can increase the illuminance of light on a substrate and also solve the problem of light shielding due to the accumulation of reaction products. The purpose is to
この発明に係る半導体製造装置は、反応室内の石英ガラ
ス管内に線状ランプを複数個配設してなるものを光源と
して用い、上記石英ガラス管の外周面の基板側部分を覆
うような状態にて紫外線透過フィルムを移動させるフィ
ルム駆動装置を設けたものである。A semiconductor manufacturing apparatus according to the present invention uses as a light source a plurality of linear lamps disposed inside a quartz glass tube in a reaction chamber, and is arranged so as to cover the substrate side portion of the outer peripheral surface of the quartz glass tube. A film drive device is provided to move the ultraviolet transmitting film.
この発明においては、光源を反応室内に設けたから、該
光源が基板に近づいて該基板上の光の照度が高まり薄膜
は速く形成される。また石英ガラス管下部を覆うフィル
ムを設けたから、反応生成物は該フィルムに付着し、該
フィルムが巻き取られることによって上記石英ガラス管
表面には曇りが生じない。In this invention, since the light source is provided in the reaction chamber, the light source approaches the substrate, increasing the illuminance of the light on the substrate and forming the thin film quickly. Furthermore, since a film is provided to cover the lower part of the quartz glass tube, the reaction product adheres to the film, and when the film is wound up, no clouding occurs on the surface of the quartz glass tube.
以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例による半導体製造装置の断面
側面図、第２図は第１図のａ−ｎ線断面図である。両図
において、１は反応室、１３は該反応室ｌ内に設けられ
た回転可能な円筒形石英ガラス管、１２は該石英ガラス
管１３の内壁に沿って複数の線状ランプが配設されてな
る光源、１６は上記石英ガラス管１３回転用モータ、１
４は紫外線透過フィルムであり、これは上記円筒形石英
ガラス管１３の外周面の基板側部分にこれを覆うような
状態にて移動するよう設けられている。１５は該フィル
ム１４を上記円筒形石英ガラス管１３の回転方向に該石
英ガラス管１３と同期させて移動させ巻き取るフィルム
駆動装置、１５ａ、１５ｂは該駆動装置１５のフィルム
供給ローラ、巻取ローラである。また、３は基板加熱用
ヒータ、４は反応ガス、５は基板、７は反応ガス供給口
、８は反応後のガス４ａを排出するためのガス排出口、
１９は基板５を載置し、円筒形石英ガラス管１３の軸に
直角方向に移動する移動テーブル、２０は該移動テーブ
ル１９を駆動するテーブル移動機構であり、これは上記
テーブル１９に固着された連結子１９ａに螺合したボー
ルネジ２．３六これを回転駆動するモータ２４とから構
成されている。FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line a--n in FIG. In both figures, 1 is a reaction chamber, 13 is a rotatable cylindrical quartz glass tube provided in the reaction chamber 1, and 12 is a plurality of linear lamps arranged along the inner wall of the quartz glass tube 13. 16 is a motor for rotating the quartz glass tube 13;
Reference numeral 4 denotes an ultraviolet transmitting film, which is provided on the substrate side portion of the outer peripheral surface of the cylindrical quartz glass tube 13 so as to be movable so as to cover it. 15 is a film drive device that moves and winds the film 14 in the rotational direction of the cylindrical quartz glass tube 13 in synchronization with the quartz glass tube 13; 15a and 15b are a film supply roller and a take-up roller of the drive device 15; It is. Further, 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 7 is a reaction gas supply port, 8 is a gas discharge port for discharging the gas 4a after the reaction,
19 is a moving table on which the substrate 5 is placed and moves in a direction perpendicular to the axis of the cylindrical quartz glass tube 13; 20 is a table moving mechanism that drives the moving table 19; this is fixed to the table 19; It consists of a ball screw 2.3 screwed onto the connector 19a, and a motor 24 for rotationally driving the ball screw.
１１は円筒形石英ガラス管１３の曲面側の一端に設けら
れた反応ガス供給ノズル、２１は該供給ノズル１１とと
もに円筒形石英ガラス管１３を挟むよう該ノズル１１と
反対側に設けられたガス排出−ノズルである。11 is a reaction gas supply nozzle provided at one end of the curved side of the cylindrical quartz glass tube 13, and 21 is a gas exhaust provided on the opposite side of the nozzle 11 so as to sandwich the cylindrical quartz glass tube 13 together with the supply nozzle 11. -It is a nozzle.
次に作用効果について説明する。Next, the effects will be explained.
本装置においては、反応ガス４は供給ロアから反応室１
内に供給され、一方光源１２である円筒形石英ガラス管
１３から光が投射されて該反応ガス４が光化学反応を生
じ、ヒータ３によって加熱されている基板５上に薄膜が
形成される、 そして本装置では円筒形石英
ガラス管１３内にづ 複数の線状ランプを配設
したものを光源として用い、該光源１２を反応室１内に
設けたので、該光源１２を任意の距離まで基板５に近づ
けることができ、該基板５上の光の照度を高めることが
できる。このため光、源の出力を必要以上に高めること
な（基板５上への薄膜の形成速度を速めることができる
。In this device, the reaction gas 4 is supplied from the supply lower to the reaction chamber 1.
On the other hand, light is projected from a cylindrical quartz glass tube 13 serving as a light source 12 to cause a photochemical reaction in the reaction gas 4, and a thin film is formed on the substrate 5 heated by the heater 3; In this apparatus, a plurality of linear lamps arranged inside a cylindrical quartz glass tube 13 is used as a light source, and since the light source 12 is installed in the reaction chamber 1, the light source 12 can be extended to any distance between the substrate and the substrate. The illuminance of the light on the substrate 5 can be increased. Therefore, the output of the light source is not increased more than necessary (the speed of forming a thin film on the substrate 5 can be increased).
また上記薄膜形成に際し、反応生成物は上記石英ガラス
管１３の表面に付着しようとするが、これば該表面に設
けられたフィルム１４に付着し、該フィルム１４が順次
巻き取られることによって上記石英ガラス管１３表面に
は反応生成物は付着しない、また、石英ガラス管１３の
回転速度に同期し、てフィルム１４が動くので両者の間
でほこりは発生しない。Further, during the formation of the thin film, the reaction product tends to adhere to the surface of the quartz glass tube 13, but it adheres to the film 14 provided on the surface, and as the film 14 is sequentially wound up, the reaction product tends to adhere to the surface of the quartz glass tube 13. No reaction products adhere to the surface of the glass tube 13, and since the film 14 moves in synchronization with the rotational speed of the quartz glass tube 13, no dust is generated between the two.
また、本実施例では反応ガス供給ノズル１１とガス排出
ノズル２１を円筒形石英ガラス管１３を挟んで該ガラス
管１３下方に設けたので、反応ガス４は、円筒形石英ガ
ラス管１３と基板５との間隔力１もっとも狭く、基板５
上の光の照度がもつとも強いところを流れ、該反応ガス
４に光化学反応を速やかに起こさせることができる。ま
たこれらノズル１１．２１を設けることにより、反応ガ
ス４を短い距離だけ流せばよいため、反応室ｌ内の不必
要な部分に反応ガス４が流れるのを防止できる。又、反
応ガスを短い距離を効率よく流すことができるため、反
応ガスの濃度を均一に、しかも反応ガスの光化学反応の
速度に合わせ十分な量の反応ガスを基板５上に流し込む
ことができ、薄膜の形成速度を速めることができる。Furthermore, in this embodiment, the reactive gas supply nozzle 11 and the gas discharge nozzle 21 are provided below the cylindrical quartz glass tube 13 with the cylindrical quartz glass tube 13 in between. The spacing force 1 is the narrowest, and the substrate 5
The light flows where the illuminance of the light is high, and can cause the reaction gas 4 to undergo a photochemical reaction quickly. Further, by providing these nozzles 11, 21, the reaction gas 4 only needs to flow over a short distance, so that it is possible to prevent the reaction gas 4 from flowing into unnecessary portions within the reaction chamber 1. In addition, since the reactive gas can be efficiently flowed over a short distance, the concentration of the reactive gas can be made uniform, and a sufficient amount of the reactive gas can be flowed onto the substrate 5 in accordance with the speed of the photochemical reaction of the reactive gas. Thin film formation speed can be increased.
又、円筒形石英ガラス管１３内に該ガラス管１３の内壁
に沿って線状ランプを適当な間隔をおいて配置している
ので、上記ガラス管１３の軸と直角な方向において基板
５上の光の照度分布はある程度均一にでき、さらに該方
向に移動テーブル１９を移動させるようにしたので、該
方向の光の照度分布をより均一にでき、従って基板５上
に連続して均一なｉ膜を形成することができる。Moreover, since the linear lamps are arranged at appropriate intervals along the inner wall of the cylindrical quartz glass tube 13, the linear lamps are arranged at appropriate intervals within the cylindrical quartz glass tube 13, so that the linear lamps are arranged at appropriate intervals along the inner wall of the cylindrical quartz glass tube 13. The illuminance distribution of the light can be made uniform to some extent, and since the moving table 19 is moved in this direction, the illuminance distribution of the light in that direction can be made even more uniform, and therefore a uniform i-film can be formed continuously on the substrate 5. can be formed.
また反応ガス供給ノズル１１とガス排出ノズル２１を円
筒形石英ガラス管１３を挟んで設けたことにより、移動
テーブル１９の移動方向に沿って反応ガスは流れること
になり、反応ガスの流れ方向に沿った微妙な反応ガスの
濃度変化により形成される薄膜への膜厚変化に対する影
響を回避できる。Furthermore, by providing the reactive gas supply nozzle 11 and the gas discharge nozzle 21 with the cylindrical quartz glass tube 13 in between, the reactive gas flows along the moving direction of the moving table 19. It is possible to avoid the influence of changes in the thickness of the thin film formed due to subtle changes in the concentration of the reactant gas.
以上のように、この発明に係る半導体製造装置によれば
、複数の線状ランプを石英ガラス管内に組み込んだもの
を光源として用い、該光源を反応室内に設けたので、基
板上の光の照度を高めて薄膜の形成速度を速めることが
でき、また上記石英ガラス管表面にフィルムを設け、こ
れを移動させ巻き取るようにしたので、゛核表面に曇り
が生ずるのを防止できる効果がある。As described above, according to the semiconductor manufacturing apparatus according to the present invention, a plurality of linear lamps incorporated in a quartz glass tube is used as a light source, and the light source is provided in the reaction chamber, so that the illuminance of the light on the substrate is In addition, since a film is provided on the surface of the quartz glass tube and the film is moved and wound up, it is possible to prevent clouding on the surface of the core.
第１図は本発明の一実施例による半導体製造装置の断面
側面図、第２図は第１図の■−■線断面図、第３図は従
来の半導体製造装置の断面側面図である。
１は反応室、１２は光源、４は反応ガス、５は基板、１
３は石英ガラス管、１４は紫外線透過フィルム、１５は
フィルム巻取装置である。
なお図中同一符号は同−又は相当部分を示す。
代理ん早瀬憲−FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line -■ in FIG. 1, and FIG. 3 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. 1 is a reaction chamber, 12 is a light source, 4 is a reaction gas, 5 is a substrate, 1
3 is a quartz glass tube, 14 is an ultraviolet transmitting film, and 15 is a film winding device. Note that the same reference numerals in the figures indicate the same or equivalent parts. Acting Ken Hayase
Claims (2)
化学反応を生じさせ該反応ガス中に置かれた基板上に薄
膜を形成させる半導体製造装置において、上記光源が上
記反応室内に設けられた石英ガラス管内に複数の線状ラ
ンプが配設されてなるものであり、上記石英ガラス管の
外周面の基板側部分を覆うような状態にて紫外線透過フ
ィルムを移動させるフィルム駆動装置が設けられている
ことを特徴とする半導体製造装置(1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the light source is provided in the reaction chamber. A plurality of linear lamps are disposed inside a quartz glass tube, and a film driving device is provided for moving an ultraviolet transmitting film so as to cover the substrate side portion of the outer peripheral surface of the quartz glass tube. Semiconductor manufacturing equipment characterized by
紫外線透過フィルムの移動速度は上記石英ガラス管の周
速度と同速であることを特徴とする特許請求の範囲第１
項記載の半導体製造装置。(2) The quartz glass tube is rotatable, and the moving speed of the ultraviolet transmitting film is the same as the circumferential speed of the quartz glass tube.
Semiconductor manufacturing equipment as described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25344584A JPH0638404B2 (en) | 1984-11-29 | 1984-11-29 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25344584A JPH0638404B2 (en) | 1984-11-29 | 1984-11-29 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61131418A true JPS61131418A (en) | 1986-06-19 |
| JPH0638404B2 JPH0638404B2 (en) | 1994-05-18 |
Family
ID=17251494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25344584A Expired - Lifetime JPH0638404B2 (en) | 1984-11-29 | 1984-11-29 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0638404B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6866721B2 (en) * | 2001-09-11 | 2005-03-15 | Korea Advanced Institute Of Science And Technology | Apparatus and method for photo-induced process |
-
1984
- 1984-11-29 JP JP25344584A patent/JPH0638404B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6866721B2 (en) * | 2001-09-11 | 2005-03-15 | Korea Advanced Institute Of Science And Technology | Apparatus and method for photo-induced process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0638404B2 (en) | 1994-05-18 |
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