JPS61125028A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61125028A
JPS61125028A JP59245985A JP24598584A JPS61125028A JP S61125028 A JPS61125028 A JP S61125028A JP 59245985 A JP59245985 A JP 59245985A JP 24598584 A JP24598584 A JP 24598584A JP S61125028 A JPS61125028 A JP S61125028A
Authority
JP
Japan
Prior art keywords
wire
groove
lead
semiconductor device
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59245985A
Other languages
English (en)
Inventor
Masachika Masuda
正親 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59245985A priority Critical patent/JPS61125028A/ja
Publication of JPS61125028A publication Critical patent/JPS61125028A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は、半導体装置、特に半導体装置内部の電極間結
線に適用して有効な技術に関するものである。
〔背景技術］ 半導体装置では、リードまたはメタライズからなる内部
電極とベレットとの電気的接続がワイヤボンディングに
よって行われることが広く知られている。
このとき、リードフレームを用いる半導体装置であれば
、インナーリード部分に金、恨、半田等のメッキが施さ
れることがある。
これは、ワイヤとリードの電気的接続を良好ならしめる
ためである。
ところが、メッキを施す際にはインナーリード全体にメ
ッキを施すために、必要となるメッキ量も多く、特にメ
ッキ材料として導電性の良い金を用いた場合にはコスト
高となる。
ここで、ボンディングに必要な部分にのみメッキを施す
、いわゆるポイントメッキにより、使用するメッキ材を
少量に抑えることが考えられる。
しかし、ポイントメッキは被着面積が小さいため、メッ
キが剥がれ易いことが本発明者によって明らかにされた
。
このことから、メッキを用いずにワイヤとり−ドの電気
的接続を確実に行うことの出来る技術が必要であること
が、更に本発明者によって明らかにされたのである。
また、内部電極がセラミック等のパッケージ上に形成さ
れたメタライズによって形成されている半導体装置にお
いても同様に、電極とワイヤの電気的接続を良好に行う
ことのできる技術が必要であることが本発明者によって
明らかにされた。
なお、ワイヤを用いた電極間接続の技術として詳しく述
べである例としては、工業調査会、１９８０年１月１５
日発行ｒｌｃ化実装技術」、Ｐ９９〜Ｐ１０３がある。
［発明の目的］ 本発明の目的は、内部電極とワイヤとの電気的接続を確
実に行うことのできる技術を提供することにある。
本発明の他の目的は低コストで信鎖性の高い半導体装置
を提供することにある。
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。
［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。
すなわち、ワイヤボンディングされる内部電極表面の長
さ方向に溝を設けることによって、咳溝にワイヤ先端部
を圧入して内部電極とワイヤとの電気的接続を行い、前
記目的を達成するものである。
［実施例１］ 第１図は、本発明による一実施例である半導体装置のワ
イヤとリードの接合状態を示す第２図の１−１線拡大部
分断面図である。
第２図は、本実施例による半導体装置の全体を示す断面
図である。
本実施例の半導体装置１は、エポキシ樹脂等のレジン２
により封止されてなるいわゆるレジンモールド型の半導
体装置であって、たとえば４２アロイや！１Ｍ（ｃｕ）
を含む合金からなるリードフレーム３の中央に形成され
たタブ４の上に／リコン（Ｓ　ｉ）からなるペレット５
がＩＮ（Ａｇ）ペースト６で取付けられている。該ペレ
ット５上にはアルミニウムからなるポンディングパッド
７が形成されている。
また、リードフレーム３のワイヤボンディング部である
内部リードを構成する各リード３ａのタブ４よりの先端
にはリード３ａの長さ方向に１１１８が設けられている
。咳溝８は溝幅がリード３ａ表面の開口部付近は狭く、
底部にいくに従って広（なるよう逆テーパ状に形成され
ている。かかる溝形状は凸面を有するパンチでまず溝を
形成した後に凹面のパンチで開口部を狭くプレスするこ
とにより容易に形成できるものである。
この溝８とペレット５上のポンディングパッド７とは金
（Ａｕ）からなるワイヤ９により電気的に接続されてい
る。このワイヤ９による電気的接続は、まずペレット５
上のポンディングパッド７にポールボンディングを行い
、十分なループ高さをとった上でキャピラリ先端部（図
示せず）でワイヤ９の他端をリード３ａ上の該溝８部分
に加圧することによってワイヤ材料の一部を該溝８に圧
入して電気的導通を達成するものである。また、このと
きにワイヤ９の他端を加熱してその一部を溶融せしめて
該溝８との接合を行ってもよい。
このように本実施例によれば、リード３ａがワイヤ９を
咬持した状態で接続が行われているため、リード３ａ上
のワイヤ９との接続部分にメッキを施すことなく信頌性
の高い電気的接続を行うことができる。
［実施例２］ 第３図は、本発明による他の実施例である半導体装置の
ワイヤとリードの接合状態を示す第４図のｌｌｌ−１１
１線拡大部分断面図である。
第４図は、本実施例による半導体装置の全体を示す断面
図である。
本実施例による半導体装置１１は、バラケーン基板１２
を低融点ガラス１３を介してキャップＩ４で気密封止し
てなる、いわゆるチップキャリア型の半導体装置である
。
セラミックからなる断面コ字状のパッケージ基板１２の
中央部のペレット取付は面にはベレット１５が銀ペース
ト１６で取付けられており、該ベレット】５上面にはア
ルミニウムからなる多数のポンディングフィツト１７が
形成されている。
また、ペレット１５周囲のバッケーノ基板１２表面には
Ｍ基板１２の壁面を貫通して該基板１２の側面および裏
面まで延在されてなるメタライズ１８が形成されており
、該メタライズ１８のベレット１５近傍には各メタライ
ズ１８の長さ方向に溝１９が設けられている。
該溝１９はパッケージ基板１２の焼結前に形成しておい
てもよいし、また焼結後に該基板１２の一部をエツチン
グ除去することにより形成してもよい。
なお、該１１１１９の内面にもメタライズ１８が形成さ
れている。
この溝１９とペレット１５上のポンディングパッド１７
とは金（Ａｕ）からなるワイヤ２０により電気的に接続
されている。このワイヤ２０による電気的接続は、まず
ペレット１５上のポンディングパッド１７にウェッジポ
ンディングまたはポールポンディングを行い、十分なル
ープ高さをとった上でキャピラリもしくはウェッジの先
端部（図示せず）でワイヤ２０の他端をメタライズ１日
上の該溝１９部分に加圧することによってワイヤ材料の
一部を接溝１９に正大して電気的導通を達成するもので
ある。また、このときにワイヤ２０他端に超音波振動を
加えれば、メタライズ１８との接合性をさらに高めるこ
とができる。
このように本実施例によれば、ワイヤ２０とメタライズ
１８との接触面積を大きくとることができるため、信頼
性の高い接続を行うことができ、さらに接合部の電気抵
抗の低減を図ることもできる。
［効果］ （１ｊ、内部電極の長さ方向に溝を設けることによって
、核溝部にワイヤ先端を正大して内部′ｒ１１８ｉとワ
イヤとの電気的接続を行うことができ、信頼性の高い電
気的接続が可能となる。
（２）、溝を逆テーバ状の横断面形状とすることにより
、さらに接続強度の高い電気的接続を行うことができる
。
（３）、リード上に溝を設けることにより、インナーリ
ード表面のメッキ処理を行うことな（ワイヤとの接続が
可能となり、材料の低減を図ることができる。
（４１，メタライズ部を溝の内部にも設けることにより
、ワイヤとメタライズとの接触面積を太き（することが
でき、電気抵抗の低減を図ることができる。
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
たとえば、実施例ではパッケージ構造としてレジンモー
ルド型およびチンプキャリア型についてのみ説明したが
、これに限るものでなく、ワイヤポンディングを行う半
導体装置であればいかなるパッケージ構造のものであっ
てもよい。
また、ワイヤの材質についても金に限られず、銅もしく
はアルミニウム等であってもよい。
【図面の簡単な説明】
第１図は、本発明による実施例Ｉである半導体装置のワ
イヤとリードの接合部を第２図の［−１線で切断した拡
大部分断面図、 第２図は、実施例１による半導体装置の全体を示す断面
図、 第３図は、本発明による実施例２である半導体装置のワ
イヤとリードの接合部を第４図のｍ−■線で切断した拡
大部分断面図、 第４図は、実施例２による半導体装置の全体を示す断面
図である。 １・・・半導体装置、２・・・レジン、３・・・リード
フレーム、３ａ・・・リード、４・・・タフ゛、５・・
・ベレット、６・・・１艮ペースト、７・　・　・ポン
ディングパッド、８・・　・溝、９・・　ワイヤ、１１
・・・半導体装置、Ｉ２・・・パッケージ基板、Ｉ３・
・・低融点ガラス、１４・・・キャップ、１５・・・ベ
レット、１６・・・銀ペースト、１７・・・ポンディン
グパッド、１８・・・メタライズ、１９・・・溝、２ｏ
・・・ワイヤ。 第　　１　　図 第　　２　　図

Claims (1)

  1. 【特許請求の範囲】 １、ワイヤボンディングされる内部電極表面の長さ方向
    に溝が設けられていることを特徴とする半導体装置。 ２、溝の開口部付近の横断面幅が溝底側の横断面幅より
    も狭くなるように形成されていることを特徴とする特許
    請求の範囲第１項記載の半導体装置。 ３、内部電極がパッケージ基板上のメタライズで形成さ
    れていることを特徴とする特許請求の範囲第１項記載の
    半導体装置。 ４、内部電極がリードフレームの内部リードで形成され
    ていることを特徴とする特許請求の範囲第１項記載の半
    導体装置。
JP59245985A 1984-11-22 1984-11-22 半導体装置 Pending JPS61125028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59245985A JPS61125028A (ja) 1984-11-22 1984-11-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59245985A JPS61125028A (ja) 1984-11-22 1984-11-22 半導体装置

Publications (1)

Publication Number Publication Date
JPS61125028A true JPS61125028A (ja) 1986-06-12

Family

ID=17141755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59245985A Pending JPS61125028A (ja) 1984-11-22 1984-11-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61125028A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002073177A3 (en) * 2001-03-09 2003-06-05 Zellweger Analytics Ltd Electrochemical gas sensor
JP2005026691A (ja) * 2003-07-01 2005-01-27 Stmicroelectronics Inc ボールボンディングにおいて小径ワイヤにより構成されたボンドの強度を増加するシステム及び方法
WO2008155726A2 (en) * 2007-06-21 2008-12-24 Nxp B.V. A carrier for electric packages and a method of structuring a carrier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002073177A3 (en) * 2001-03-09 2003-06-05 Zellweger Analytics Ltd Electrochemical gas sensor
JP2005026691A (ja) * 2003-07-01 2005-01-27 Stmicroelectronics Inc ボールボンディングにおいて小径ワイヤにより構成されたボンドの強度を増加するシステム及び方法
WO2008155726A2 (en) * 2007-06-21 2008-12-24 Nxp B.V. A carrier for electric packages and a method of structuring a carrier
WO2008155726A3 (en) * 2007-06-21 2009-03-05 Nxp Bv A carrier for electric packages and a method of structuring a carrier

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