JPS61107516A - Pattern forming method of resist film - Google Patents
Pattern forming method of resist filmInfo
- Publication number
- JPS61107516A JPS61107516A JP59229902A JP22990284A JPS61107516A JP S61107516 A JPS61107516 A JP S61107516A JP 59229902 A JP59229902 A JP 59229902A JP 22990284 A JP22990284 A JP 22990284A JP S61107516 A JPS61107516 A JP S61107516A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- film
- resist film
- pattern
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
Landscapes
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、レジスト膜のパターン形成方法に関し、特
に厚いレジスト膜に対して高解像度でパターン形成する
ための新しいパターン形ｇ 方Ｌ に関するものである
。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for forming a pattern on a resist film, and in particular to a new pattern shape g direction L for forming a pattern with high resolution on a thick resist film. be.
薄膜磁気ヘッドのコイル導体などの厚い材料層を形成す
る際に利用して有効なレジスト膜パターン形成方法とし
て、特開昭５８−１１４４３０号公報に示す方法が知ら
れており、それにつき第２図を参照して簡単に説明する
。As a resist film pattern forming method effective for forming a thick material layer such as a coil conductor of a thin film magnetic head, a method disclosed in Japanese Patent Application Laid-Open No. 114430/1982 is known, and FIG. Please refer to and briefly explain.
まず第２図（ａ）を参照して、基板１１に３．５μｍ程
度の厚い第１のレジストｌＩ＊１２を塗布後、その上に
アルミニウムなど露光に対し不透明である０、１μｍの
金属膜１３を蒸着法などで形成し、さらにその上に０．
５μｍ程度の第２のレジスト膜１４を塗布する。そして
第２のレジスト膜１４を所定パターンを有するフォトマ
スク 〈図示せず）により露光し、現像して第２レジス
トパターンを形成する。次ぎに第２図（ｂｌを参照して
、前記第２レジストパターンをマスクにして金属膜１３
をエツチング後、基板全面を露光する。さらに現像を加
えることにより、第２図（Ｃ１に示す如き垂直な壁を持
つ高解像な第ルジストパターンが形成される。この後、
例えば図示しないが金属膜１３を除去してから基板１１
の表面に予め導電膜を付着し、それをメッキ浴に浸して
電解メッキ処理すれば第ルジストパターンに対応する所
望のコイル導体を当該基板上に析出することができる。First, referring to FIG. 2(a), after coating a first resist lI*12 with a thickness of about 3.5 μm on a substrate 11, a metal film 13 of 0.1 μm, such as aluminum, which is opaque to exposure is applied thereon. is formed by a vapor deposition method or the like, and then 0.
A second resist film 14 of about 5 μm is applied. The second resist film 14 is then exposed to light using a photomask (not shown) having a predetermined pattern and developed to form a second resist pattern. Next, referring to FIG. 2 (bl), the metal film 13 is removed using the second resist pattern as a mask.
After etching, the entire surface of the substrate is exposed. By further developing, a high-resolution first pattern with vertical walls as shown in FIG. 2 (C1) is formed. After this,
For example, although not shown, after removing the metal film 13, the substrate 11
By attaching a conductive film to the surface of the substrate in advance, immersing it in a plating bath, and subjecting it to electrolytic plating, a desired coil conductor corresponding to the first resist pattern can be deposited on the substrate.
ところが実際には上記従来のパターン形成方法では、第
３図に示すように第２レジストパターンの、パターン間
隔が数１０μｍと広いパターン間においてレジスト膜の
残存１２′が生じるという問題がある。この残存レジス
ト膜の発生原因は、現像不良によるものであるが、その
現像時に金属膜１３上に存在する第ルジストパターンの
段差形成によるものと考えられる。すなわち、第ルジス
トパターンは０．５μｍ程度の厚みを有していて第２図
（ｂ）に示す如く第１のレジスト膜１２上に比較的大き
な段差を生じる。この段で区画されたパターンが小さい
面積の場合は、現像液はその区画内に万遍なく侵入する
けれども、前述した数１０μｍの広い間隔を持つパター
ンでは広い面積の同区画内において気泡が生じ易く、そ
の気泡によって第１のレジスト膜１２面に対する現像液
の現像が阻止され、結果的にその部分のレジスト膜が残
されることになるわけである。従って、この現像不良の
第ルジストパターンによれば、断線傷害などの起こり易
い品質の悪いコイル導体が得られるという問題が発生す
る。However, in reality, in the conventional pattern forming method, as shown in FIG. 3, there is a problem that residual resist film 12' occurs between the second resist patterns, where the pattern spacing is as wide as several tens of micrometers. This residual resist film is caused by poor development, and is thought to be caused by the formation of a step in the resist pattern existing on the metal film 13 during development. That is, the first resist pattern has a thickness of about 0.5 μm, and a relatively large step is formed on the first resist film 12 as shown in FIG. 2(b). If the area of the pattern partitioned by this stage is small, the developer will penetrate evenly into the partition, but if the pattern has wide intervals of several tens of micrometers as described above, air bubbles will easily form within the same large area. The bubbles prevent the developer from developing the surface of the first resist film 12, and as a result, the resist film in that area remains. Therefore, the problem arises that a poor quality coil conductor is obtained which is susceptible to breakage and the like due to this poorly developed first resist pattern.
この発明は、以上のような従来の状況からパターン形状
に関係なく厚いレジスト膜を高解像度でパターン形成と
したレジスト膜のパターン形成方法の提供を目的とする
ものである。SUMMARY OF THE INVENTION In view of the conventional situation as described above, it is an object of the present invention to provide a method for forming a pattern of a resist film, which enables pattern formation of a thick resist film with high resolution regardless of the pattern shape.
この発明は、以上のような問題点を解決するために、基
板上に形成した厚膜の第１のレジスト膜をパターン化さ
れた不透明薄膜をマスクにして露光し、現像するに先立
って、不透明薄膜上に在る第２レジストパターンを除去
することにより、前 ；記現像時に第１のレジ
スト膜表面にパターニング用のマスクに大きな段差を生
じさせないようにしたことを特徴とするものである。第
２レジストパターンは、バターニングされた直後にまず
露光され、不透明薄膜のエツチング用マスクとして用済
み後直ちに現像により除去される。In order to solve the above-mentioned problems, this invention exposes a thick first resist film formed on a substrate using a patterned opaque thin film as a mask. By removing the second resist pattern existing on the thin film, it is possible to prevent a large step from forming on the patterning mask on the surface of the first resist film during the development described above. The second resist pattern is first exposed to light immediately after patterning and is removed by development immediately after being used as a mask for etching the opaque thin film.
感光された第１のレジスト膜を現像する際、その表面に
は小さな段差を呈する不透明薄膜しか存在しないので、
その段差で区画されたレジスト膜表面は気泡が発生し難
くなるために万遍なく現像液に浸され、完全に現像され
ることになる。When developing the exposed first resist film, only an opaque thin film with small steps is present on its surface.
Since the resist film surface divided by the steps is less likely to generate bubbles, it is evenly immersed in the developer and is completely developed.
第１図は本発明の一実施例によるパターン形成方法を工
程順に説明するための断面図で、基板１１上に第１のレ
ジスト膜１２．金属薄膜１３．第２のレジスト膜１４を
順次形成する工程と、該第２のレジス）１１％をパター
ニングする工程とは前記第２図の従来例と同一である。FIG. 1 is a cross-sectional view for explaining step-by-step a pattern forming method according to an embodiment of the present invention, in which a first resist film 12 is formed on a substrate 11. Metal thin film 13. The process of sequentially forming the second resist film 14 and the process of patterning the second resist film 11% are the same as in the conventional example shown in FIG.
本実施例では、この工程後まず第１図（ａｌに示す如く
基板全面を露光して、パターン化された第２のレジスト
膜（第２レジストパターン）１４を感光させる。この場
合、第１のレジスト膜１２は金属１！ｉ！１３に遮られ
て未感光である。In this embodiment, after this step, the entire surface of the substrate is first exposed to light as shown in FIG. 1 (al) to expose the patterned second resist film (second resist pattern) 14. The resist film 12 is blocked by the metal 1!i!13 and is not exposed to light.
次いで第１図（ｂｌに示す如く第２レジストパターン１
４をマスクとして金属膜１３を工・ノチングし、金属膜
マスク１３′を形成する。次いでこの基板１１を現像液
に浸して、前記感光の第２レジストパターン１４を除去
する。次いで第２レジストパターン１４が除去された第
１図（Ｃ）に基板１１上の第１のレジスト膜１２を露光
し、それによって金属膜マスク１３′の開口対応のレジ
スト部分を感光させる。そして最後に感光された第１の
レジスト膜１２を現像液により現像するが、この場合当
該レジスト膜の感光面には現像液が万遍な（浸される。Next, a second resist pattern 1 is formed as shown in FIG.
4 as a mask, the metal film 13 is machined and notched to form a metal film mask 13'. Next, the substrate 11 is immersed in a developer to remove the photosensitive second resist pattern 14. Next, the first resist film 12 on the substrate 11 is exposed to light in FIG. 1C from which the second resist pattern 14 has been removed, thereby exposing the resist portions corresponding to the openings of the metal film mask 13'. Finally, the exposed first resist film 12 is developed with a developer; in this case, the photosensitive surface of the resist film is evenly immersed in the developer.
そのため該第１のレジスト膜は第１図（ｄ）に示す如く
垂直な壁を持った高解像の第２レジストパターン１２′
として形成される。またこのパターンには不要なレジス
ト膜の残存は生じない。Therefore, the first resist film has a high resolution second resist pattern 12' having vertical walls as shown in FIG. 1(d).
is formed as. Moreover, no unnecessary resist film remains in this pattern.
以上の説明から明らかなように、この発明によれば厚い
レジスト膜に対して高品質の高解像度パターンを形成す
ることができる。よって、この発明は薄膜磁気ヘッドの
コイル導体などを形成するのに極めて有益である。As is clear from the above description, according to the present invention, a high-quality, high-resolution pattern can be formed on a thick resist film. Therefore, the present invention is extremely useful for forming coil conductors of thin film magnetic heads.
第１図はこの発明に係るレジスト膜のパターン形成方法
の一実施例を工程順に説明するための断面図、第２図は
従来例を説明するための断面図、第３図は従来例によっ
て形成されたレジスト残存を付随するレジストパターン
を示す断面図である。
１１：基板、１２：第１のレジスト膜＋１２′：第ルジ
ストパターン、１３：不透明薄膜（金属膜）。
１３′：金属膜マスク、１４：第２のレジスト膜。
第１図FIG. 1 is a cross-sectional view for explaining an embodiment of a resist film pattern forming method according to the present invention in the order of steps, FIG. 2 is a cross-sectional view for explaining a conventional example, and FIG. 3 is a cross-sectional view for explaining a conventional example. FIG. 3 is a cross-sectional view showing a resist pattern with residual resist. 11: Substrate, 12: First resist film + 12': First resist pattern, 13: Opaque thin film (metal film). 13': Metal film mask, 14: Second resist film. Figure 1
Claims (1)
不透明な薄膜、第１のレジスト膜より薄い第２のレジス
ト膜を順次形成する工程、前記第２のレジスト膜を選択
的に露光し、現像して所定のパターンを形成後、その第
２レジストパターンを露光する工程、該第２レジストパ
ターンをマスクにして前記不透明薄膜をエッチングし、
薄膜パターンを形成する工程、前記第２レジストパター
ンを現像により除去する工程、前記薄膜パターンをマス
クにして前記第１のレジスト膜を露光し、現像して第１
レジストパターンを形成する工程とからなることを特徴
とするレジスト膜パターン形成方法。a step of sequentially forming on a substrate a thick first resist film, a thin film opaque to exposure thereof, and a second resist film thinner than the first resist film; selectively exposing the second resist film; and after developing to form a predetermined pattern, exposing the second resist pattern to light, etching the opaque thin film using the second resist pattern as a mask,
forming a thin film pattern; removing the second resist pattern by development; exposing the first resist film using the thin film pattern as a mask; developing the first resist film;
1. A method for forming a resist film pattern, comprising the step of forming a resist pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59229902A JPS61107516A (en) | 1984-10-30 | 1984-10-30 | Pattern forming method of resist film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59229902A JPS61107516A (en) | 1984-10-30 | 1984-10-30 | Pattern forming method of resist film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61107516A true JPS61107516A (en) | 1986-05-26 |
Family
ID=16899515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59229902A Pending JPS61107516A (en) | 1984-10-30 | 1984-10-30 | Pattern forming method of resist film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61107516A (en) |
-
1984
- 1984-10-30 JP JP59229902A patent/JPS61107516A/en active Pending
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