JPS6088356A - Semiconductor type gas detecting bridge - Google Patents
Semiconductor type gas detecting bridgeInfo
- Publication number
- JPS6088356A JPS6088356A JP19570683A JP19570683A JPS6088356A JP S6088356 A JPS6088356 A JP S6088356A JP 19570683 A JP19570683 A JP 19570683A JP 19570683 A JP19570683 A JP 19570683A JP S6088356 A JPS6088356 A JP S6088356A
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- Japan
- Prior art keywords
- gas
- series
- humidity
- detection
- semiconductor
- Prior art date
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】 この発明は、半導体式ガス検出用ブリッジに関する。[Detailed description of the invention] The present invention relates to a semiconductor gas detection bridge.
従来の半導体式ガス検出用ブリッジとしては、例えば特
公昭５５−１９３７９号公報に記載さ力、ているような
ものが知られている。このものは、第１図に示すように
接触燃焼式の検出素子（１）および半導体式の検出素子
（２）を直列接続して第１の直列２辺（３）を構成し、
また、２つの抵抗素子（４）（５）を直列接続して縞２
の直列２辺（Ｇｌ ｋ 構成している。前記検出素子（
１）は熱線（７）の小部分に触媒からなる吸着部（８）
を塗布して構成し、一方、検出素子（２）は熱線（９）
の大きな部分に半導体からなる吸殆部（１０） ｋ （
７１着して構成している。そして、前記第１、第２の直
列２辺（３１（６！の両端同士は互に接続さｎて入力端
子（１す（１４となり、また、これら直列２辺＋３）ｆ
６）の中間接すに点は出力端子＋１３）（１４）となる
。このようなガス検出用ブリッジの入力端子（ｌ ］）
＋１２１に入力端子を印加した状態で検出素子＋１）（
２１にガスが接触すると、ガスの燃焼によって検出素子
（１）の温１悶が上昇して抵抗が増大し、一方、ガスの
吸着によって検出素子（２）の合成電気抵抗が減少し、
これにより、両者の抵抗値に大きな相違が生じ、太さな
出力′ｒｈ圧全出力端子（１３１（１４）から得ること
ができるのである。As a conventional semiconductor type gas detection bridge, for example, the one described in Japanese Patent Publication No. 19379/1983 is known. As shown in FIG. 1, this device has a catalytic combustion type detection element (1) and a semiconductor type detection element (2) connected in series to form two first series sides (3),
Also, by connecting two resistive elements (4) and (5) in series, stripes 2
It consists of two series sides (Gl k ).The detection element (
1) is an adsorption part (8) consisting of a catalyst in a small part of the hot wire (7).
On the other hand, the detection element (2) is composed of a hot wire (9)
The absorption part (10) consisting of semiconductor in a large part of k (
It consists of 71 finishes. Then, both ends of the first and second series sides (31 (6!) are connected to each other to form an input terminal (1 (14), and these two series sides + 3) f
The intermediate interface point of 6) becomes the output terminal +13) (14). Input terminal (l ]) of such a gas detection bridge
With the input terminal applied to +121, the detection element +1)(
When gas comes into contact with 21, the temperature of the detection element (1) increases due to the combustion of the gas and the resistance increases, while the combined electrical resistance of the detection element (2) decreases due to adsorption of the gas.
This causes a large difference in the resistance value between the two, and a thick output 'rh pressure can be obtained from the full output terminal (131 (14)).
しかしながら、このものは、画素子（１）（２＋の吸着
部（８）（Ｉｆｆ）の太きさ、月質等が異なるため、ガ
ス中に水蒸気が含まれていると、この水蒸気の影響を受
けてガス濃度測定に誤差が生じたり、あるいは周囲環境
の７１１一度変化に伴なって零点が変動するという問題
点がある。しかも、前述の理由により周囲環境の温度変
化によっても零点が変動するという問題点もある。さら
に、このものは高濃度ガスに接触すると、燃焼熱により
検出素子（１）の熱線（７）が高温となりすぎて断線し
てしまうという問題点もある。However, since the thickness and quality of the adsorption parts (8) (Iff) of pixel elements (1) (2+) are different, if water vapor is included in the gas, the effects of this water vapor may be affected. Therefore, there is a problem that an error occurs in the gas concentration measurement, or the zero point fluctuates due to a change in the surrounding environment.Furthermore, for the reasons mentioned above, the zero point also fluctuates due to a change in the temperature of the surrounding environment. There are also problems.Furthermore, when this device comes into contact with highly concentrated gas, the hot wire (7) of the detection element (1) becomes too hot due to combustion heat and breaks.
この発明は前述の問題点に着目してなされたもので、全
ての半導体検出素子が影響を受ける湿度に対する補償が
なされるとともに温度に対しても補償がなされ、さらに
高濃度のガスをも検出でさる半導体式ガス検出用ブリッ
ジを提供することを目白りとしている。This invention was made by focusing on the above-mentioned problems, and it is not only compensated for humidity, which affects all semiconductor detection elements, but also compensated for temperature, and is also capable of detecting highly concentrated gases. The company is currently planning to provide a semiconductor gas detection bridge.
このような目的は、半導体式の検出素子および補償素子
を直列接続して第１の直列２辺を構成するとともに２つ
の抵抗素子を直列接続して第２の直列２辺を構成し、こ
れら第１、第２の直列２辺の両端同士を接続して入力端
１子とするとともに、第１、第２の直列２辺の中間接続
点を出力端子とした半６体式ガス検出用ブリッジにおい
て、前記検出素子は熱線条に金属酸化物半導体をイｔ
ｆｆｉして構成した感ガス素子よりなり、一方、補償素
子は前記感ガス素子と瓜二つの感ガス素子の表面にガス
が吸着しない透湿部全没けて構成した感溝素子よりなる
ことにより達成することができ石。For this purpose, a semiconductor detection element and a compensation element are connected in series to form two first series sides, and two resistance elements are connected in series to form a second series side. 1. In a semi-six-piece gas detection bridge in which both ends of the two series sides of the second series are connected to each other to form one input terminal, and an intermediate connection point of the first and second series sides is used as the output terminal, The detection element includes a metal oxide semiconductor applied to the hot wire.
ffi, and the compensating element is composed of a groove sensing element configured such that the moisture-permeable part where gas is not adsorbed is entirely submerged on the surface of the gas-sensitive element, which is exactly the same as the gas-sensitive element. You can achieve the stone.
以下、この発明の一実施例の１１４成を図面を参照して
説明する。Hereinafter, the 114th structure of one embodiment of the present invention will be explained with reference to the drawings.
第２図において、（２１）は半導体式ガス検出用ブリッ
ジであり、このブリッジ（２１）は半導体式の検出素子
（２２）および温度、湿度を補償する補償素子Ｃ：３）
が直列接続されて構成された第１の直列２辺シ４）？有
する。前記検出素子曽は感ガス素子（２５）よりなり、
この感ガス素子（２５）は、例えば白金等の耐熱、耐Ｉ
Ｏ’。In Fig. 2, (21) is a semiconductor type gas detection bridge, and this bridge (21) includes a semiconductor type detection element (22) and a compensation element C:3) that compensates for temperature and humidity.
The first series two sides configured by connecting in series 4)? have The detection element consists of a gas-sensitive element (25),
This gas-sensitive element (25) is made of heat-resistant, I-resistant material such as platinum, for example.
O'.
食性金属の細線（線径１５ミクロン程度うからなる熱線
条シラ）を有する。そして、この熱線条（２６）は通電
されるとジュール熱を発生して発熱する。この熱線条Ｃ
２［ｉ＋は中央部に複数回巻回されたコイル部（２７１
全イ１し、このコイルｄ；（２力全部には金属酸化物半
導体ｔ２ｇ＋が塗布焼結により付着されている。なお、
この金属酸化物半導体郭）はコイル部（２７）の大部分
に刺着されていてもよい。この金属酸化物半導体（２８
）としては、例えば、酸化錫、酸化亜鉛、酸化チタン、
酸化鉄等の１１型半ｍ体が使用される。このような金属
酸化物半導体（＋８１は、酸化性あるいは還元性ガスを
眼幅すると、その抵抗値がガス濃度に応じて増大あるい
は減少し、また、水蒸気（湿気）を吸／音するとその抵
抗筒が湿度に応じて変化（減少）する。前述した熱線条
（２６）および金属酸化物半導体０８１は全体として前
１Ｈ−Ｉ６ガス素子（２５）を構成する。また、＋）ｉ
Ｊ記袖噴素子（２３）は感湿素子し９）よりなり、この
感湿素子（２）は前記感ガス素子（２５）と瓜二つの感
ガス素子Ｃ３（＋１の表面ｐｃ透湿部（３１）を設けて
構成されている。It has thin wires of edible metal (thermal filaments with a wire diameter of about 15 microns). When the heating wire (26) is energized, it generates Joule heat and generates heat. This heat streak C
2[i+ is a coil part (271
All parts are 1, and this coil d; (2) A metal oxide semiconductor t2g+ is attached to the entire part by coating and sintering.
This metal oxide semiconductor shell may be stuck to most of the coil part (27). This metal oxide semiconductor (28
), for example, tin oxide, zinc oxide, titanium oxide,
Type 11 half-m body such as iron oxide is used. When such a metal oxide semiconductor (+81) is exposed to an oxidizing or reducing gas, its resistance value increases or decreases depending on the gas concentration, and when it absorbs water vapor (humidity)/sound, its resistance value increases or decreases. changes (decreases) depending on the humidity.The above-mentioned heat line (26) and metal oxide semiconductor 081 constitute the front 1H-I6 gas element (25) as a whole.
The J recording element (23) consists of a moisture sensing element (2), which is exactly the same as the gas sensing element (25), and the gas sensing element C3 (+1 surface PC moisture permeable part ( 31).
ここで感カス素子（７）が感ガス素子（２５１と瓜二つ
とは、感ガス素子（２））の熱線条Ｃ３２１が熱線条（
２６）と同一線径、同−月質、同−技さてあり、また、
コイ１１部Ｉ３濠がコイル部（２７）と同一巻数、同一
コイル径、同一ピッチ角であり、金属酸化物半導体Ｃ３
（１）が金属酸化物半導体（２８）と同一材質、同−形
状等であることをいう１、前記透湿部（３１）は多孔質
の金属酸ｆＬ物からなり、例えば、粒子径が０１〜３ミ
クロンの酸化第２クロム、酸化第２鉄、酸化アルミニウ
ムまたは前記金属酸化物から選ばれた２種以上の混合物
からなる。Here, the gas-sensitive element (7) is the same as the gas-sensitive element (251 is the gas-sensitive element (2)), and the heat line C321 is the heat line (251).
26) has the same wire diameter, the same quality, and the same technique, and also,
The coil 11 part I3 moat has the same number of turns, the same coil diameter, and the same pitch angle as the coil part (27), and the metal oxide semiconductor C3
(1) is of the same material, shape, etc. as the metal oxide semiconductor (28). ~3 microns of chromic oxide, ferric oxide, aluminum oxide, or a mixture of two or more selected from the above metal oxides.
このような透湿部０１）を感ガス素子０））にイτ１シ
ムするには、例えば透湿部（３１）が酸化第２クロムの
場合には、重クロム酸カリ水溶液金感ガス素子嬢に塗布
し焼成する工程を繰り返すことにより行なう。また、（
３５）圓は直列に接続された固定および可変抵抗素子で
あり、これら固定、可変抵抗素子（３ω□□□）は全体
として第２の直列２辺０７）を構成する。前記第１、第
２の直列２辺（２ａＯ力の両端は互に接続されて電諒入
力端子（３８１０９）となり、これらの人力鼎１１子ぐ
（８１（３９）には直流又は交流電掠が接続されている
。また、１）１１記第１、第２の直列２辺（２尋６ηの
中間接続点はそれぞ）主出力端子（＝＋ （４υとなり
、これらの出力ＱＷ子（４ｆｌ＋ Ｇｌ １１には例え
ばｔ圧計が接続されている。In order to shim such a moisture-permeable part 01) to the gas-sensitive element 0)), for example, when the moisture-permeable part (31) is made of chromic oxide, an aqueous solution of potassium dichromate is used for the gold-sensitive gas element. This is done by repeating the steps of coating and baking. Also,(
35) The circle is a fixed and variable resistance element connected in series, and these fixed and variable resistance elements (3ω□□□) collectively constitute the second series two sides 07). Both ends of the first and second series sides (2aO power) are connected to each other to form an electric power input terminal (38109), and a DC or AC electric wire is connected to these human power input terminals (81 (39)). Also, 1) The first and second series sides of No. 11 (the middle connection point of 2 fathom 6η are respectively) main output terminal (=+ (4υ), and these output QW terminals (4fl+ Gl 11 For example, a t-pressure gauge is connected to the t-pressure gauge.
Ｑ′に、この発明の一実施例の作用について六兄明する
。Q' will explain the operation of one embodiment of this invention.
まず、入力端子（３８１（３９）を通じて第１および第
２の直列２辺Ｃ・Ｉ）（３Ｄに直流又は交流を通電する
と、検出素子（２２１および補償素子し３）は、共に熱
線条（２Ｇ）および（記）の発熱により２００°Ｃから
５００℃までの検出温度に上昇する。このとき、水蒸気
を含むガスを検出素子（２２１および補償素子（２３）
に接触させると検出素子＠の金属酸化物半導体（２８１
が水蒸気およびガスを吸シｕし、この金属酸化物半導体
（２８）の抵抗値が、カスの種類（酸化性又は還元性）
！１．ｔおよび水蒸気の砲１隻に対応して増大あるいは
減少する。First, when direct current or alternating current is applied to the first and second series two sides C and I (3D) through the input terminal (381 (39)), both the detection element (221 and the compensation element 3) detect the hot wire (2G ) and (note) increase the detection temperature from 200°C to 500°C.At this time, the gas containing water vapor is transferred to the detection element (221 and compensation element (23)).
When brought into contact with the metal oxide semiconductor (281
absorbs water vapor and gas, and the resistance value of this metal oxide semiconductor (28) depends on the type of scum (oxidizing or reducing).
! 1. t and increases or decreases by one steam cannon.
このとさ、検出素子（２渇は、熱線条（２６）の抵抗と
、熱線条シも）のコイル部Ｃ′Ｏ間に挾まれた金属酸化
物半導体（２８１の抵抗、とが並列接続された回路と等
価であるため、金属酸化物半導体（２）の抵抗値の変化
により、その合成抵抗値が変化する。一方、補償素子シ
３）については、透湿部（３１）が前述のような水蒸気
にλＪし吸イｊ性のある材質から構成されているため、
Ａ［伝は所＋ｕ ｄ臀＋Ｉｌｌ／賜豊ｊ引 へらに、金
属酸化物半導体０力に到達し吸着さ、？’ｌる。しがＬ
１ガス（ツー透湿部６１）に吸着されない。したがって
、金属酸化物半導体（３＝Ｉｊにはガスは到達しない。In this case, the metal oxide semiconductor (resistance 281) sandwiched between the coil portion C'O of the detection element (the resistance of the heating wire (26) and the heating wire) are connected in parallel. Since the circuit is equivalent to the circuit shown in FIG. Because it is made of a material that has λJ and absorbs water vapor,
A [The story is + u d buttocks + Ill / Tamayo j pull The metal oxide semiconductor reaches zero force and adsorbs it to the spatula,? 'll. Shiga L
1 gas (2 moisture permeable portion 61). Therefore, the gas does not reach the metal oxide semiconductor (3=Ij).
この結果、補償素子（２ａｌの金属酸化物半導体（３４
）は湿度のみに反応し、湿度の高低に対応して金属酸化
物半導体（３４）の抵抗値が変化し、これにより、補償
素子（２３＋の合成抵抗値が変化する。このとき、検出
素子（２ン）および、補償素子（２３）における水蒸気
に対する抵抗の変化は、検出素子し榎、補償素子（２３
）が透湿部（３１）を除けば瓜二つであるため、共にほ
ぼ等しく、この結果、互に変化は打ち消し合い湿度補償
がなさ力、る。また、温度についても、検出素子（２２
）および補償素子（２３＋は、透湿部（３］１ （ｉｚ
除いて瓜二つであるため、環境温度の変化を等しく受け
、温度補償がなされる。この結果、出力端子（４０Ｈ４
１）間には、検出素子（２２１および補償素子（２３）
の合成芒抗の差が電位差として現われ、この電位差が電
圧計により指示される。この電位差は前記ガスの漢度に
のみ追従するため、電圧計の目盛を読み取ることにより
数十ｌ）ｌ］＋１のレベルでガス濃反ヲ検出することが
できる。As a result, the compensation element (2al metal oxide semiconductor (34
) reacts only to humidity, and the resistance value of the metal oxide semiconductor (34) changes in response to the humidity level, which changes the combined resistance value of the compensation element (23+).At this time, the detection element ( Changes in resistance to water vapor in the compensation element (23) and the detection element (23)
) are exactly the same except for the moisture permeable part (31), so they are almost equal, and as a result, the changes cancel each other out and there is no humidity compensation. Regarding temperature, the detection element (22
) and the compensation element (23+ are the moisture permeable part (3]1 (iz
Since they are identical to each other, they are equally affected by changes in environmental temperature, and temperature compensation is achieved. As a result, the output terminal (40H4
1) There is a detection element (221) and a compensation element (23) in between.
The difference in the composite awn resistance appears as a potential difference, and this potential difference is indicated by a voltmeter. Since this potential difference follows only the temperature of the gas, it is possible to detect gas concentration at a level of several tens of liters + 1 by reading the scale of the voltmeter.
第：う〜６図は第１図に示した従来のブリッジと本発明
のブリッジとの比較全示したグラフであり、第：３図は
ガス濃度を変化させた場合のプリノン出力刊性を示した
ものであり、第４図は周囲１ｉ１１’Ｌ度２０℃で相対
湿度を変化させた場合のブリッジ出力を示したもので湿
度干渉を現わしている。Figures 6 to 6 are graphs showing a complete comparison between the conventional bridge shown in Figure 1 and the bridge of the present invention, and Figure 3 shows the purinone output performance when changing the gas concentration. FIG. 4 shows the bridge output when the relative humidity is changed at an ambient temperature of 111'L degrees and 20 degrees Celsius, showing humidity interference.
第５図は周囲温度を変化させた場合のブリッジ出力を示
したもので、温度干渉を現わしている。この第４．５図
かられかるように、本発明のブリッジは湿１迂、温度が
変動してもブリッジの出力はほぼ一５ｉであり、湿度、
温度補償が行なわれている。FIG. 5 shows the bridge output when the ambient temperature is changed, showing temperature interference. As can be seen from Fig. 4.5, the bridge of the present invention has an output of approximately 15i even when the humidity and temperature fluctuate.
Temperature compensation is performed.
第６図は断線テストの結果であり、イソブタンガス濃度
・１％中に両ブリッジを設置し断線までの萌間ｆ： １
ｌｉｌｌ ’ｐＭしたが、従来のものは１分間で断線し
て１１ｉ１１定不能となり、一方、本発明のものは４０
時間を・経過し−（も断線しなかった。Figure 6 shows the results of a wire breakage test, where both bridges were installed in an isobutane gas concentration of 1%, and the distance between them until wire breakage was f: 1
lill' pM, but the conventional one broke in 1 minute and became undefined, while the inventive one broke at 40 pM.
After some time passed, the wire did not break.
以上説明したように、この発明により、ば、半導１・１
・式のカス検出素子に不可避な湿度の影響をｈｌｉ Ｉ
Ａでさるとともに温度補償もでき、さらに高濃度ガスを
も検出することができる。As explained above, according to this invention, semiconductor 1.1
・Hli I
In addition to A, temperature compensation is also possible, and high concentration gas can also be detected.
第１図は従来の半導体式ガス検出用ブリッジの一例を示
す回路図、第２図はこの発明の一実施例を示すその回路
図、第３図から第（）図は従来のブリッジとこの発明の
ブリッジとの比ＩＡ示すグラフであり、第３図は出力特
性を、第４図は湿度干渉を、第５図は温度干渉を、第６
図は断線テスト結果會示すグラフである。
０鼾・・・・・検出素子 （２３＋・・・・・補償素子
（２４）・・・・・・第１の直列２辺 （２５）・・・
・・・感ガス素子（２Ｇ）・・・・・熱線条
（２８）・・・・・金属酸化物半導体
１２９ｊ・・・・・・感湿素子 （３ｏ）・・・・・・
感ガス素子０１ノ・・・・・透湿ｔ’ＡＳＣ３５ｉ□□
□）・・・・・・抵抗索子Ｃ３７）・・・・・・第２の
直列２辺 （３８１Ｃ３９＋・・・・人力☆１１１１子
（４（ＩＩ （４１）・・・・・・出力端子特許出願人
理研３Ｉ器株式会社
代理人 弁理士 多 １） 敏 雄
図面の浄鶏（ｉ’）’ｉ’ｉ’に変更なし）第３図
第４図
どＣ，ｌ＋Ｕ
手続補正書（自発ン
昭和５８年１０月３１日
昭ｆ１１５８年１０月１９日提出の特許願２ 発明の名
称
半導体式ガス検出用ブリッジ
３ 補正をする者
小作との関係 特許出願人
住 所 東京都板楡区小豆沢２丁目７番６号名 称 理
研計器株式会社
１１代理人〒１６０
５ 補正の対象
願書、出願審査請求書、明細岩、同曲おまひ委任状
６ 補正の内容
（１）願書の浄書（内容に変更なし）を別紙の通り提出
する。
（２） 出願審査請求書の浄書（内容に変更なし）を別
紙の辿り提出する。
（３）明細書の浄書（内容に変更なし）を別紙の通り提
出する。
（４）図＋ｍｉ （全図）の浄書（内容に変更なし）を
別紙のＪｌｕり提出する。
（５）安住状全補充する。
ノ、Ｌノ、」ニFig. 1 is a circuit diagram showing an example of a conventional semiconductor type gas detection bridge, Fig. 2 is a circuit diagram showing an embodiment of the present invention, and Figs. Fig. 3 shows the output characteristics, Fig. 4 shows the humidity interference, Fig. 5 shows the temperature interference, and Fig. 6 shows the ratio IA to the bridge.
The figure is a graph showing the results of the disconnection test. 0 snore...detection element (23+...compensation element (24)...first two series sides (25)...
... Gas-sensitive element (2G) ... Heat wire (28) ... Metal oxide semiconductor 129j ... Moisture-sensitive element (3o) ...
Gas-sensitive element 01... Moisture permeable t'ASC35i□□
□)...Resistance cable C37)...Second series 2 sides (381C39+...Human power☆1111 child (4(II (41)...Output terminal Patent applicant Riken 3I Co., Ltd. agent Patent attorney 1) No change to Jyoji (i') 'i'i' in Toshiyu drawing) Figure 3 Figure 4 C, l + U Procedural amendment (voluntary Patent application 2 filed on October 31, 1980 and October 19, 1988 Name of the invention Semiconductor type gas detection bridge 3 Relationship with tenancy of the person making the amendment Patent applicant address 2-chome Azukizawa, Itaya-ku, Tokyo No. 7 No. 6 Name Riken Keiki Co., Ltd. 11 Agent 〒160 5 Application subject to amendment, request for examination of application, specification rock, same song mahi power of attorney 6 Contents of amendment (1) Engraving of application (no change in content) ) as attached. (2) Submit an engraving of the request for examination of the application (with no changes in content) as attached. (3) Submit an engraving of the specification (with no changes in content) as attached. (4) Submit an engraving (with no changes to the contents) of the drawings + mi (all drawings) on a separate sheet. (5) Supplement the entire certificate of residence. ノ, Lノ, "ni
Claims (1)
の直列２辺を構成するとともに２つの抵抗素子を直列接
続して第２の直列２辺を構成し、これら第１、第２の直
列２辺の両端同士を接５して入力端子とするとともに、
第１、第２の直列２辺の中間接続点を出力端子とした半
導体式ガス検出用ブリッジにおいて、前記検出素子は熱
線条にｅ属酸化物半導体を付着して構成した感ガス素子
よりなり、一方、補償素子は前記感ガス素子と瓜二つの
感ガス素子の狭面にガスが吸着しない透湿部を設けて構
成した感湿素子よりなることを相へとする半導体式ガス
検出用ブリクジ。[Semiconductor type detection element and compensation element are connected in series]
, and two resistance elements are connected in series to form a second series two sides, and both ends of these first and second series sides are connected to each other to form an input terminal. ,
In a semiconductor type gas detection bridge in which the intermediate connection point of the first and second series two sides is an output terminal, the detection element is composed of a gas-sensitive element formed by adhering a group E oxide semiconductor to a hot wire, On the other hand, in the semiconductor type gas detection bridge, the compensating element is composed of a moisture sensing element formed by providing a moisture permeable part on the narrow side of the gas sensing element, which is exactly the same as the gas sensing element, and a moisture permeable part that does not adsorb gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19570683A JPS6088356A (en) | 1983-10-19 | 1983-10-19 | Semiconductor type gas detecting bridge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19570683A JPS6088356A (en) | 1983-10-19 | 1983-10-19 | Semiconductor type gas detecting bridge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6088356A true JPS6088356A (en) | 1985-05-18 |
Family
ID=16345619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19570683A Pending JPS6088356A (en) | 1983-10-19 | 1983-10-19 | Semiconductor type gas detecting bridge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6088356A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003016877A1 (en) * | 2001-07-26 | 2003-02-27 | Avista Laboratories, Inc. | Method of compensating a mos gas sensor, method of manufacturing a mos gas sensor, mos gas sensor, and fuel cell system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693038A (en) * | 1979-12-27 | 1981-07-28 | Nec Corp | Semiconductor gas sensor |
-
1983
- 1983-10-19 JP JP19570683A patent/JPS6088356A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693038A (en) * | 1979-12-27 | 1981-07-28 | Nec Corp | Semiconductor gas sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003016877A1 (en) * | 2001-07-26 | 2003-02-27 | Avista Laboratories, Inc. | Method of compensating a mos gas sensor, method of manufacturing a mos gas sensor, mos gas sensor, and fuel cell system |
| US6550304B2 (en) | 2001-07-26 | 2003-04-22 | Avista Laboratories, Inc. | Method of compensating a MOS gas sensor, method of manufacturing a MOS gas sensor, MOS gas sensor, and fuel cell system |
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