JPS6066877A - Photo diode - Google Patents
Photo diodeInfo
- Publication number
- JPS6066877A JPS6066877A JP58175856A JP17585683A JPS6066877A JP S6066877 A JPS6066877 A JP S6066877A JP 58175856 A JP58175856 A JP 58175856A JP 17585683 A JP17585683 A JP 17585683A JP S6066877 A JPS6066877 A JP S6066877A
- Authority
- JP
- Japan
- Prior art keywords
- type
- contact
- diffused layer
- layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000000078 claw Anatomy 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 235000012631 food intake Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、光検知素子であるソメトダイオードに関する
。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a somethodiode which is a photodetecting element.
（ロ）従来技術
従来光通過域に、Ｉ３いて＋１型端η）ｔ」二にｐ型拡
ｉｆ＆層を形成−Ｊるフォトダイオードでは、光はｌ）
型拡散ｊｉ１を通追１してｐ−ｎ接合面に到達するため
、ｐ型拡＋ｉ＆ Ｉ＋％ ｃの入射光の減衰を少なくし
、（１１イリノ率を高めるためにはｐ型拡散層はできる
たり薄いほうが望まし５い（０，５ｐｍｌり下）。(b) Prior art In the conventional photodiode, a p-type expanded layer is formed at the +1 type end η)t in the optical passband.
In order to reach the p-n junction surface through the type diffusion ji1, the attenuation of the incident light of the p-type diffusion +i & I+% It is preferable that the liquid be thinner (less than 0.5 pml).
とごろかｐ型拡散層にアルミニウムコンタクトを形成す
る際、コンタクト＜３１Ｘにおいてアルミニウムとシリ
コンの合金化によるノリザ・イトがｐ Ｊｉ’、Ｉ拡散
層内に形成される。そのため前記のようノ、會１〜いｐ
型拡散層にアルミニウムコンタクトを形成すると、前記
シリサイドがｐ −ｎ接合面伺近にまで達し暗電流が非
常に多くなっ−でしまい、フＡＩ・ダイオードの特性が
悪化してしまう。さらにｉ’＋ｉｉ記合金化が進むとｐ
−ｎ接合面が短絡してしまい、ソＡトダイオードとして
の機能がなくなってしまう。When an aluminum contact is formed in a p-type diffusion layer, a norizite is formed in the p Ji',I diffusion layer by alloying aluminum and silicon at a contact <31X. Therefore, as mentioned above, meetings 1-p
When an aluminum contact is formed in the type diffusion layer, the silicide reaches close to the p-n junction surface, resulting in a very large dark current and deteriorating the characteristics of the FAI diode. As the alloying of i'+ii further progresses, p
-n junction surface is short-circuited, and the function as a so-A diode is lost.
（ハ）Ｌ１的
本発明は、感度を下げることなく 、Ｉｌｌ電ＤＩこの
少ない食費性のフォトダイオ−１−を提供することを１
」的としている。(c) The present invention aims to provide a photodiode with low food consumption without reducing sensitivity.
"It has been the target.
（ニ）構成
本発明に係るフォトダイオードＬ：ｌ： 、受光ｆ１１
４の−Ｊコンタク・下方の接合部分が該受光部の他の接
合部分よりも深く形成されていることを９１１徴として
いる。(d) Structure Photodiode L:l:, light receiving f11 according to the present invention
The 911 characteristic is that the lower joint part of the -J contact in No. 4 is formed deeper than the other joint parts of the light receiving part.
（ボ）実施例 第１図は本発明の一実施例を示す構成断面図Ｃある。(B) Example FIG. 1 is a sectional view C showing an embodiment of the present invention.
同図に１６いで１はｎ型基盤で、その上面部の−Ｄ：ｊ
＋にｎ−１八旧〃、散層２が形成され、それと少し間隔
を隔ててｎ型基盤１１面の受光部に相当する部分にｐ型
拡ｉｔ＆ Ｉ丙３が形成されている。これにまって＋１
型ｉ、弓ｊｉｉ ｌとｐ型拡散１ｅｊ ３のあいだにｐ
−ｎ接合＋Ｉｉｉ ４が形成される。In the same figure, 16 and 1 are n-type substrates, and -D:j
An n-1 diffusion layer 2 is formed on the positive side, and a p-type expansion layer 3 is formed at a portion corresponding to the light-receiving portion of the n-type substrate 11 surface at a slight distance from the diffusion layer 2. +1 for this
Type i, p between bow jii l and p type diffusion 1ej 3
-n junction +Iii 4 is formed.
ｒｌ型ノＩ’； ａ：Ｉ ’、ｒｌｌ型拡ｉ１＆Ｉｅ２
及びｐ型拡ｔｔ＆Ｅ７３上ｉ’ｊｐにソリコン酸化１１
Ｎ ５が形成され、ｎ＋ ＞、＜２１１： ＨｋＪ７ｉ
コンタクｌ−６及びｐ型拡１ｔ＆ 層コンタク１〜７が
それぞれ所定位置に形成される。そし゛Ｃｐ型拡１ｆ＆
ｌｉコンタクｌ−７−Ｆ部にｐ型拡散１ｉ７過剰拡１
１に部分８が他の受光部のｐ−τｌ接合面４ 、Ｊ、り
も７朶く形成される。rl type no I'; a: I', rll type expansion i1 & Ie2
and p-type expansion tt&E73 on i'jp solicon oxidation 11
N5 is formed, n+ >, <211: HkJ7i
Contactors 1-6 and p-type expansion 1t&layer contacts 1-7 are formed at predetermined positions, respectively. Then Cp type expansion 1f&
p-type diffusion 1i7 excessive expansion 1 in li contact l-7-F section
A portion 8 is formed on the p-τl junction surface 4, J, and 7 of the other light-receiving portion.
また入射光はｐ型拡：ｉ’ｉ、 Ｉぜ；３を通過し−（
ｐ −ｎ接合面４に到達するか、光の減ｇを防止するた
めに、＋ｉｉｔ記ｐ−ｒｌ接合は、受光部のコンタクト
であるｐ型拡散１５’ｉ 二＋ンタクト７部分を除いて
極めて浅く （０，５μｍ以下）に形成されている。Also, the incident light passes through the p-type expansion: i'i, Ize;3 and -(
In order to prevent the light from reaching the p-n junction surface 4 or to prevent the light from decreasing, the p-rl junction described in +iit is extremely It is formed shallowly (less than 0.5 μm).
つぎに、本実施例に係るフォＩ−ダイオードの製造工程
につい′Ｃ述べろ。Next, the manufacturing process of the photo diode according to this embodiment will be described.
第２図は本実施例に係るソ第１・ダ１羽−１・の製造工
程を説明するための図である。ｉ’； １．’、−４’
＋！に−）いて１ｌＩｌｉを追って説明する。FIG. 2 is a diagram for explaining the manufacturing process of the first wing and the first wing-1 according to this embodiment. i'; 1. ', -4'
+! 1lIli will be explained later.
（，１）研磨、洗浄したｒ１２（″１基４７．’ｉ ｌ
上面に水ブ・ｒ気１復化を行い、シリコン酸化膜４を形
成する。(,1) Polished and cleaned r12 (''1 unit 47.'i l
A silicon oxide film 4 is formed on the upper surface by performing reconstitution with water and air.
（ｂｌ 写真食刻工程によってシリコン酸化ｔ１１′ｌ
′！＋’＋にｎ ”型拡散部の窓開りをおこなう。(bl Silicon oxidation t11'l by photo-etching process
′! A window of the n'' type diffusion section is opened at +'+.
（Ｃ１リンなどの［１型不純物を拡１１にずイ）ごとに
、ｊ、ってｎｌ−型拡散ｊ聞２を形成する。For every [1-type impurity such as C1 phosphorus], an nl-type diffusion j2 is formed.
ｔｄｌ 写真食刻」二稈によってソリフン酸化１１１叉
４に［）型拡散Ｉ腎過剰拡１１に部の窓開りをおこなう
。tdl photo engraving' Two culms make a window opening in the soliphun oxidation 111 and 4 [) type diffusion I kidney hyperexpansion 11.
（ｃｌ ホ１′１ンなと゛のｐ暦り不に上物を１広１ｆ
Ｉ／、すること６．二、１、ってｐ型拡散層過刺拡１１
に部分８を形成する。(Cl Ho 1'1 N.'s P Calendar, 1st floor, 1st floor)
I/, to do 6. 2.1, p-type diffusion layer overextension 11
A portion 8 is formed.
（［）写真食刻工程によってシリ−ノンＨｆ、９化１１
９４にｐ型拡１ｆｋ層部の窓開けをおこなう。([) Silinone Hf, 9-11 by photo-etching process
At 94, a window is opened in the p-type expansion 1fk layer.
（ｇｌ ボｔコン拡１’ｌによって浅いｐ型拡ｉ１Ｎ！
＃３を形成する。(shallow p-type expansion i1N by gl button expansion 1'l!
Form #3.
（１１）写真食刻工程によってシリコン酸化膜４にｎ
Ｆ型拡散ｊ苗コンタクト６及びｐ型拡散ｊジｊコンタク
ｌ−７部に窓開りをおこなう。(11) N on the silicon oxide film 4 by photolithography process.
A window is opened in the F-type diffusion J seedling contact 6 and the P-type diffusion J Ji-J contact 1-7.
（ｉ＋ アルミニウＪ＼芸着及び写真食刻工程によって
０４型拡散１ｉ４ｉコンタク１−６及びｐ型拡散部［；
に１ンタクト７を形成する。(i+ Aluminum J\04 type diffusion 1i4i contact 1-6 and p type diffusion part [;
1 contact 7 is formed.
なお、上述の実施例では、ｎ型基盤にｐ型拡散１ｉツを
形成するとしＣ説明したが、これは、ｐ型基＜（：ｔに
ｎ〕ｌ’ｌ拡故層を形成するものであっても勿論よい。In the above embodiment, it was explained that a p-type diffusion layer is formed on an n-type substrate, but this does not mean that a p-type diffusion layer is formed on a p-type group <(:t). Of course it's fine.
また、′−１′−導体基Ｊｉｉｉ：とじては、シリコン
の他に、〔；（シ、 Ｇ１〕八ｓ１１ｎＧａ八ｓ、［；
ａ＾１八ｓへＧａ八へ Ｐ 、ｌ ｎ Ｇ ｄＡ ｓ
ｉ〕 であっζよい。In addition to silicon, the '-1'-conductor group Jiii: [; (S, G1] 8s11nGa 8s, [;
a＾18s to Ga8 P , l n G dA s
i] It's good.
（・＼） リノ果
本発明に（糸る）、Ａ１タイオー１” ＆；ｌ、受光部
の、、ＪンククＦカの１）ｉ合を深く形成しであるから
、前記、ノンタクトｌ：’ ｒｒ＋＋に形成されるシリ
ザイ１′が寝易に１）−ｒ１１部面に達しない。したが
って、従来のものに比較して、ｌ’ｉｆ電流の少ない良
性性のフＡｌ・タイオー［を実現できる。(・＼) According to the present invention, A1 type 1"&;l, light receiving part, 1) i joint of J&;F is formed deeply, so as mentioned above, non-tact l:' The silicone layer 1' formed on the rr++ layer does not easily reach the 1)-r11 surface.Therefore, a benign aluminum layer with less l'if current can be realized compared to the conventional one.
ま）こ、本発明に係るフッ）・ダイオードは、１ｉｉｉ
記：ノンタクト−ｊ’ｌ（分局外の受光部の接合を深く
するごとがないから、受光感度をさげることがない。The diode according to the present invention is 1iii
Note: Non-tact (Since there is no need to deepen the junction of the light-receiving part outside the branch, there is no reduction in light-receiving sensitivity.
！８１図は本発明の一実施例を示す構成断面１ツ１、第
２図は本実施例に係るフォトダ・イオー１−の製造工程
を説明するだめの図である。
１・・・ｎ型基盤、３・・・ｐ ４（、：ｊ拡散ＩＸづ
、７・・・ｐ型拡散層コンタクト、８・・・ｐ型拡散１
７ｉ過刺拡１ｉ（部分。
４）許出ｊの１人 林ｊ（会７１．島〆Ｖ（シ旧７１所
代理人 弁理士 大 西 孝 治
第［図
第２図
（Ｃ） （ｈ）
（ｅ）! FIG. 81 is a structural cross-sectional view showing one embodiment of the present invention, and FIG. 2 is a diagram for explaining the manufacturing process of the photodiode 1- according to this embodiment. 1...n-type base, 3...p 4(,:j diffusion IX), 7...p-type diffusion layer contact, 8...p-type diffusion 1
7i Excessive Expansion 1i (Part. 4) One of the members of Kisej, Hayashi J (Kai 71. Island 〆V) (former 71st office agent, patent attorney Takaharu Onishi [Fig. 2 (C) (h) (e)
Claims (1)
受光部の他の接合部分よりも深く形成されていることを
特徴とするツメ１−ダイオード。(1) Light reception f! 1) A claw 1-diode characterized in that the junction part below the contact 1 is formed deeper than the other junction parts of the light receiving part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175856A JPS6066877A (en) | 1983-09-22 | 1983-09-22 | Photo diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175856A JPS6066877A (en) | 1983-09-22 | 1983-09-22 | Photo diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6066877A true JPS6066877A (en) | 1985-04-17 |
Family
ID=16003391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58175856A Pending JPS6066877A (en) | 1983-09-22 | 1983-09-22 | Photo diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066877A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4986249A (en) * | 1988-10-12 | 1991-01-22 | Nissan Motor Co., Ltd. | Ignition apparatus mounting structure for internal combustion engine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4858798A (en) * | 1971-11-24 | 1973-08-17 | ||
| JPS5961191A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Semiconductor device |
-
1983
- 1983-09-22 JP JP58175856A patent/JPS6066877A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4858798A (en) * | 1971-11-24 | 1973-08-17 | ||
| JPS5961191A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4986249A (en) * | 1988-10-12 | 1991-01-22 | Nissan Motor Co., Ltd. | Ignition apparatus mounting structure for internal combustion engine |
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