JPS603165A - Light-receiving element - Google Patents
Light-receiving elementInfo
- Publication number
- JPS603165A JPS603165A JP58111246A JP11124683A JPS603165A JP S603165 A JPS603165 A JP S603165A JP 58111246 A JP58111246 A JP 58111246A JP 11124683 A JP11124683 A JP 11124683A JP S603165 A JPS603165 A JP S603165A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- receiving element
- photoconductor
- xte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000011261 inert gas Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体レーザやＬＥＤのように狭い範囲の波
長をもつ光源に応答する受光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a light receiving element that responds to a light source having a narrow range of wavelengths, such as a semiconductor laser or an LED.
従来例の構成と問題点
ＬＥＤ−ｊたは半導体レーザ等の比較的狭い波長領域ま
たは単一波長の光源を用いて、その光を受光素子で検出
するような装置のスイッチの応用が広く用いられている
。これらのＬＥＤや半導体レーザ等の赤から近赤外光領
域に感度のある受光素子としては、Ｓｉ フォトダイオ
ードが用いられている。しかし、Ｓｉフォトダイオード
は、可視光から近赤外光重での広い波長領域で感度をも
つ。このため、室内の照明等の光によって誤動作するこ
とがある。この誤動作防止の為、バンドパスフィルタを
外付してＬＥＤまたは半導体レーザの波長のみを通過さ
せているのが現状である。したがって、従来の受光素子
は、このように８１単結晶フオトダイオードの使用及び
外付はフィルタの使用により、高価となっていた。Configuration and Problems of Conventional Examples It is widely used as a switch for devices that use a light source with a relatively narrow wavelength range or a single wavelength, such as an LED or semiconductor laser, and detect the light with a light receiving element. ing. Si photodiodes are used as light-receiving elements sensitive in the red to near-infrared light region of these LEDs, semiconductor lasers, and the like. However, Si photodiodes are sensitive in a wide wavelength range from visible light to near-infrared light. Therefore, it may malfunction due to light such as indoor lighting. In order to prevent this malfunction, currently a bandpass filter is attached externally to allow only the wavelength of the LED or semiconductor laser to pass through. Therefore, the conventional light receiving element is expensive due to the use of the 81 single crystal photodiode and the use of an external filter.
発明の目的
本発明の目的は、光導電体とフィルタ層を同一装置で形
成できる狭い波長領域にのみ高感度な受光素子を提供す
ることにある。OBJECTS OF THE INVENTION An object of the present invention is to provide a light-receiving element that is highly sensitive only in a narrow wavelength range, in which a photoconductor and a filter layer can be formed in the same device.
発明の構成
本発明は、光導電体を（ＣｄｘＺｎ、 、−ｘＴｅ）、
。Structure of the Invention The present invention provides a photoconductor (CdxZn, -xTe),
.
（ｌｎ２Ｔｅ３）、（０４ｘ≦１．０＜’ｙ＜０１ ）
とし、フィルタ層を ＧｄｘＺｎ、−ｘＴｅ （０イ
ｘ４１）として、主として光導電体の不純物による光導
電効果のおこる狭い波長領域にのみ感度をもたせている
。フィルタ層はＣｄｘＺｎ１−ｘＴｅ と限定する必要
はなく、同等の透過特性をもつものであっても良い。(ln2Te3), (04x≦1.0<'y<01)
The filter layer is made of GdxZn, -xTe (0 x 41) to provide sensitivity only in a narrow wavelength range where the photoconductive effect mainly occurs due to impurities in the photoconductor. The filter layer does not need to be limited to CdxZn1-xTe, and may have similar transmission characteristics.
実施例の説明 以下に本発明の実施例を図面を用いて説明する。Description of examples Embodiments of the present invention will be described below with reference to the drawings.
（ＧｔｆｌｘＺｎ、 −ｘＴｅ ） 、ｙ （工ｎ２Ｔ
ｅ３）ｙ は特開昭５２−４６２８５号公報で示された
ごとく、ある熱処理を加えると母体のＣｄｘＺｎ１−ｘ
Ｔｅ 自身の光導電に加えて長波長側に感度がでる。(GtflxZn, -xTe), y (ENGn2T
e3) y is the parent CdxZn1-x when a certain heat treatment is applied, as shown in JP-A No. 52-46285.
In addition to its own photoconductivity, Te is sensitive to longer wavelengths.
第１図にＺｎ”、ｅ５ （ｃｄ［１，３２ｎ０．７Ｔｅ
）０．９５ （Ｉｎ２ Ｔｅ５）０．０５の例を示す、
曲線ａが通常の熱処理をした場合の分光感度、曲線すが
再度低温熱処理したときの分光感度である。したがって
第２図に示すようなＣｄ、３Ｚｎｏ、、 ’ｒｅ、、と
同等の透過特性曲線Ｃをもつ材料を光の入射側に設ける
と、第３図の曲線ｄのように近赤外光にのみ感度もつ受
光素子となる。具体的な構成としては、第４図Ａに示す
ように（Ｃｄｏ、５”０．７Ｔｅ）０．９５（Ｉｎ２Ｔ
ｅ３ ）０．０５の低温熱処理によりＣｄｏ、３Ｚｌｏ
、 Ｔｅ自身の禁止帯幅より長波長寸で増感した光導電
体膜１および、短波長の不要な光を遮断するフィルタの
役割をもつ物質層２、透光性７［極３、裏面電極４とか
らなる。透光性電極３の方から光が入射するようにする
のはもちろんである。Figure 1 shows Zn'', e5 (cd[1,32n0.7Te
)0.95 Showing an example of (In2 Te5)0.05,
Curve a is the spectral sensitivity when normal heat treatment is performed, and curve a is the spectral sensitivity when low temperature heat treatment is performed again. Therefore, if a material with a transmission characteristic curve C equivalent to Cd, 3Zno, 're, as shown in Figure 2 is provided on the light incident side, near-infrared light will be transmitted as shown by curve d in Figure 3. It becomes a light-receiving element with only sensitivity. As shown in FIG. 4A, the specific configuration is (Cdo, 5"0.7Te) 0.95(In2T
e3) Cdo, 3Zlo by low temperature heat treatment at 0.05
, a photoconductor film 1 sensitized at wavelengths longer than the forbidden band width of Te itself, a material layer 2 having the role of a filter for blocking unnecessary light of short wavelengths, and a light transmitting property 7 [pole 3, back electrode]. It consists of 4. Of course, the light should be made to enter from the transparent electrode 3.
フィルタの役割をする物質層２は光導電体膜１の母体材
料Ｃｄｏ、５ｚｎｏ、７Ｔｅど同じ組成のＸ−Ｑ、３で
ある必要は必ずしもない。The material layer 2 serving as a filter does not necessarily have to be X-Q, 3 having the same composition as the base material Cdo, 5zno, 7Te, etc. of the photoconductor film 1.
このフィルタ層２の上に直接光導電体膜１（Ｃｄｏ、３
ｚｎｏ、、’ｒｅ） ０．９５ （Ｉｎ２ Ｔｅ５ ）
０．０５ を形成する場合、光導電体膜１の母体のＣｄ
ｏ、、 ｚｎ、５’ｒｅをフィルタ層２として用いると
、光導電体の膜質は良く光導電特性、例えば応答速度は
改善される。しかし、狭い波長領域に感度をもつために
は、フィルタ層２自体は感度をもたないように光導電体
に対して低抵抗にし、電界は光導電体膜１の方にもたせ
るようにしなければならない。この制約を除くためには
、第４図ＢＫ示すように、フィルタ層２の次に透光性の
電析層３をフィルタ層２と入れかえた構成にすると良い
。このような場合、フィルタ層５と透光性電極３とは必
ずしも接触していなくても良く、中間に透光性の層が入
−）でもかまわない。A photoconductor film 1 (Cdo, 3
zno,,'re) 0.95 (In2 Te5)
0.05, the Cd of the matrix of the photoconductor film 1
When o, zn, 5're is used as the filter layer 2, the film quality of the photoconductor is good and the photoconductive properties, such as response speed, are improved. However, in order to have sensitivity in a narrow wavelength range, the filter layer 2 itself must have a low resistance to the photoconductor so that it has no sensitivity, and the electric field must be applied to the photoconductor film 1. No. In order to eliminate this restriction, as shown in FIG. 4BK, it is preferable to adopt a structure in which a transparent electrodeposition layer 3 is replaced with the filter layer 2 next to the filter layer 2. In such a case, the filter layer 5 and the transparent electrode 3 do not necessarily need to be in contact with each other, and a transparent layer may be inserted between them.
光導電体（ＣｄｘＺｎ１−ｘＴｅ）１−ｙ（工ｎ２Ｔｅ
５）ｙの組成は、ｙ＝ｏでは長波長の増感効果がなく、
ｙ≧０．１では暗電流が大きく、受光素子として通さな
いのでＯ＜ ｙ＜ Ｏ−１が適している。Photoconductor (CdxZn1-xTe)1-y(Engin2Te
5) The composition of y has no long wavelength sensitizing effect when y=o,
When y≧0.1, the dark current is large and the light does not pass through as a light receiving element, so O<y<O−1 is suitable.
以下具体的な実施例で説明する。This will be explained below using specific examples.
実施例１
第６図に示すように、工ｎ２０３，５ｒＩ０２ 等の、
透明電極４を有する光透過性基板５上にＣｄｏ３Ｚｎｏ
７Ｔｅを基板１１ｉ１Ａ度２００ ”Ｃに保ちながら４
μｍ形成し、光遮断層６を形成する。ついでＺｎ５ｅを
０・１μｍ形成し、第２層７を形成する。さらに第２７
ｉｎＴ上に（ｃｄＯ，３ｚｎＯ０７Ｔｏ）０．９５ （
Ｉｎ２Ｔｅ５ ）０．０５からなる光導電体膜８を３〜
４μｍ形成する。この蒸着膜を６００〜６００″Ｃ５３
〜６０分間不活性ガス捷たは真空中で第１回の熱処理を
行なう。その後、第１回１月の熱処理より低い温度、た
とえば２７０“Ｃを２時間真空中１だは不活性ガス中で
熱処理を行なう。そＯ
の後、電子ビーム蒸着によりへを１０ｏＯ入形成して電
極９を得、受光素子とする。このときの分光感度は第３
図の曲線ｄの通りである。Example 1 As shown in Fig. 6, engineering n203,5rI02, etc.
Cdo3Zno on the light-transmissive substrate 5 having the transparent electrode 4
7Te to the substrate 11i1A while keeping it at 200"C
μm to form a light blocking layer 6. Next, Zn5e is formed to a thickness of 0.1 μm to form a second layer 7. Furthermore, the 27th
(cdO,3znO07To)0.95 (
The photoconductor film 8 made of In2Te5)0.05 is
Form 4 μm. This vapor-deposited film is 600~600″C53
The first heat treatment is performed in an inert gas atmosphere or vacuum for ~60 minutes. Thereafter, a heat treatment is performed at a temperature lower than that of the first heat treatment in January, for example, 270"C, for 2 hours in a vacuum or in an inert gas. After that, a 1000O2 film is formed by electron beam evaporation. The electrode 9 is obtained and used as a light receiving element.The spectral sensitivity at this time is the third
This is shown by curve d in the figure.
実施例２
第６図に示すように、ＣｄＳｅ単結晶を研摩及びエツチ
ングし、基板５とする。このＧｄＳｅは可視光を吸収す
る。この基板らを２６０°Ｃに設定し工ｎ２０３を酸素
雰囲気中で反応性蒸着を行ない、工ｎ２０６４を１００
〇八形成する。この上に実施例１の第２層７以下同様の
工程で、光導電体膜８゜電極９を形成（〜て受光素子を
形成する。この才子ばほぼ可視光を完全に遮断し、近赤
外光にのみＩＮ！３度のある受光素子となる。なお、感
度傷゛性に第３図の曲線Ａのようになる。Example 2 As shown in FIG. 6, a CdSe single crystal was polished and etched to form a substrate 5. This GdSe absorbs visible light. These substrates were set at 260°C, and step n203 was reactively vapor-deposited in an oxygen atmosphere, and step n2064 was deposited at 100°C.
〇8 Formed. On top of this, a photoconductor film 8° electrode 9 is formed (to form a light-receiving element) using the same steps as the second layer 7 and below in Example 1. This layer completely blocks visible light and near-infrared It is a light receiving element with IN!3 degrees only for external light.The sensitivity damage is as shown by curve A in Fig. 3.
発明の効果
本発明の受光素子は、特別に外っけのフィルタを必要と
ぜず、蒸着法によっても作成可能なので安価である。受
光する波長領域がＬＥＤ、半導体レーザの波長である近
赤外領域で感度が高く、したがって他の可視光光源によ
る誤動作のおそれが少ない。このような特性をもつため
、近赤外光によるスイッチ等の幅広い応用に適する。Effects of the Invention The light-receiving element of the present invention does not require a special external filter and can be produced by vapor deposition, so it is inexpensive. Sensitivity is high in the near-infrared wavelength region where light is received, which is the wavelength of LEDs and semiconductor lasers, so there is little risk of malfunction due to other visible light sources. Because of these characteristics, it is suitable for a wide range of applications such as switches using near-infrared light.
第１図はＺｎ５ｅ”ｄＯ１３”ｎＯ，７Ｔｅ）ｏ、９５
（工ｎ２Ｔｅ３）０．０５の分光感度を示す特性図、
第２図は光遮断フィルタの分光透過特性を示す特性図、
第３図は本発明の一実施例における受光素子の分光感度
を示す特性図、第４図Ａ、Ｂは本発明の原理を示す構成
図、第６図は本発明の一実施例における受光素子の断面
図、第６図は同他の実施例を示す断面図である。
１．８・・・・・光導電体膜、２，６・・・・・・フィ
ルタ層、３．４・・・・・電極層、６・・・・基板。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第３
図
シ芝畏 〔八ｍ）
第４図
１光Figure 1 shows Zn5e"dO13"nO,7Te)o,95
A characteristic diagram showing the spectral sensitivity of (Engine2Te3)0.05,
Figure 2 is a characteristic diagram showing the spectral transmission characteristics of the light cutoff filter.
FIG. 3 is a characteristic diagram showing the spectral sensitivity of a light receiving element in an embodiment of the present invention, FIGS. 4A and B are block diagrams showing the principle of the present invention, and FIG. 6 is a characteristic diagram showing the spectral sensitivity of a light receiving element in an embodiment of the present invention. FIG. 6 is a sectional view showing another embodiment. 1.8...Photoconductor film, 2,6...Filter layer, 3.4...Electrode layer, 6...Substrate. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 3
Figure Shishiba (8m) Figure 4 1 light
Claims (3)
（Ｉｎ、、 Ｔｅ５） ｙ（ｏ、４ｘ、４１゜０＜７
＜０・１）からなる光導電体と、前記光導電体の光の入
射側に設けられた、（ＣｄｘＺｎ１−ｘＴｅ）（（）
４Ｘ ４１ ）の禁止帯幅と一致する禁止帯幅をもつ物
質からなるフィルタ層とを備えたことを特徴とする受光
素子。(1) (Gdx zn j-z 're) 1-y
(In, Te5) y(o, 4x, 41°0<7
<0・1), and (CdxZn1-xTe)(() provided on the light incident side of the photoconductor.
4. A light-receiving element comprising: a filter layer made of a substance having a forbidden band width that coincides with a forbidden band width of 4× 41 ).
ことを特徴とする特許請求の範囲第１項記戦の受光素子
。(2) The light receiving element according to claim 1, wherein the photoconductor and the filter layer are in electrical contact.
電極を有することを特徴とする特許請求の範囲第１項記
ｄ戊の受光素子。(3) The light-receiving element according to claim 1, d, characterized in that it has a light-transmitting electrode on the surface of the photoconductor on which the filter layer is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58111246A JPS603165A (en) | 1983-06-20 | 1983-06-20 | Light-receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58111246A JPS603165A (en) | 1983-06-20 | 1983-06-20 | Light-receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS603165A true JPS603165A (en) | 1985-01-09 |
Family
ID=14556291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58111246A Pending JPS603165A (en) | 1983-06-20 | 1983-06-20 | Light-receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603165A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689650A (en) * | 1985-10-03 | 1987-08-25 | The United States Of America As Represented By The Secretary Of The Army | Infrared epitaxial detector structure and method of making same |
| US5296384A (en) * | 1992-07-21 | 1994-03-22 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector and method for fabricating same |
| US5401986A (en) * | 1992-07-21 | 1995-03-28 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector with II-VI passivation layer |
| US5936268A (en) * | 1988-03-29 | 1999-08-10 | Raytheon Company | Epitaxial passivation of group II-VI infrared photodetectors |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5057395A (en) * | 1973-09-18 | 1975-05-19 | ||
| JPS5125091A (en) * | 1974-08-26 | 1976-03-01 | Matsushita Electric Ind Co Ltd |
-
1983
- 1983-06-20 JP JP58111246A patent/JPS603165A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5057395A (en) * | 1973-09-18 | 1975-05-19 | ||
| JPS5125091A (en) * | 1974-08-26 | 1976-03-01 | Matsushita Electric Ind Co Ltd |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689650A (en) * | 1985-10-03 | 1987-08-25 | The United States Of America As Represented By The Secretary Of The Army | Infrared epitaxial detector structure and method of making same |
| US5936268A (en) * | 1988-03-29 | 1999-08-10 | Raytheon Company | Epitaxial passivation of group II-VI infrared photodetectors |
| US5296384A (en) * | 1992-07-21 | 1994-03-22 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector and method for fabricating same |
| US5401986A (en) * | 1992-07-21 | 1995-03-28 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector with II-VI passivation layer |
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