JPS6060726A - Treating device - Google Patents
Treating deviceInfo
- Publication number
- JPS6060726A JPS6060726A JP16819083A JP16819083A JPS6060726A JP S6060726 A JPS6060726 A JP S6060726A JP 16819083 A JP16819083 A JP 16819083A JP 16819083 A JP16819083 A JP 16819083A JP S6060726 A JPS6060726 A JP S6060726A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- shielding member
- processing
- electrodes
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 5
- 238000003487 electrochemical reaction Methods 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は、処理技術、特に、プラズマ反応を利用して処
理を行う技術に関し、たとえば、半導体装置の製造にお
いて使用されるドライエツチング処理やＣ，ＶＤ処理等
に利用して有効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to processing technology, particularly technology that performs processing using plasma reactions, such as dry etching processing, C, VD processing, etc. used in the manufacture of semiconductor devices. Regarding effective techniques that can be used for etc.
［背景技術］
半導体装置の製造において、従来、エツチング処理を実
施する場合、プラズマ反応を利用したドライエツチング
装置が使用されている（たとえば、昭和５７年１０月３
０日新技術開発センター発行の半導体製造技術集成、Ｐ
、１９７参照）。[Background Art] In the manufacture of semiconductor devices, dry etching equipment that utilizes plasma reaction has conventionally been used to perform etching processing (for example,
Semiconductor manufacturing technology collection published by New Technology Development Center, P.
, 197).
かかるドライエツチング装置として、ガス導入路と排気
路とを備えた処理室に平行平板電極が設けられ、その電
極の一方にウェハを載置して高周波電圧を印加し、電極
間に形成されるプラズマによる気体電気化学反応により
ウェハにエツチング処理を施すようになっている。As such a dry etching apparatus, parallel plate electrodes are provided in a processing chamber equipped with a gas introduction path and an exhaust path, a wafer is placed on one of the electrodes, a high frequency voltage is applied, and a plasma is formed between the electrodes. The etching process is performed on the wafer through a gas electrochemical reaction.
しかし、かかるドライエツチング装置においては、ウェ
ハに処理ガスを均一に供給することが困難であるため、
ウェハの中央部では周辺部に比ベエソチング処理が遅く
なり、処理が不均一になるという問題点があることが、
本発明者によって明らかにされた。However, in such dry etching equipment, it is difficult to uniformly supply processing gas to the wafer.
The problem is that the etching process is slower at the center of the wafer than at the periphery, resulting in uneven processing.
revealed by the inventor.
そこで、一方の電極に開口を設けて処理ガスをウェハ上
に均一に供給するようにしてなるドライエツチング装置
が考えられる。Therefore, a dry etching apparatus can be considered in which an opening is provided in one electrode to uniformly supply processing gas onto the wafer.
しかし、かかるドライエツチング装置においては、電極
に開口が設けられるため、電界が不均一になり、処理が
不均一になるばかりでなく、一部では電界が集中するた
め、ウェハにダメージを与えるという問題点が発生する
ことが、本発明者によって明らかにされた。However, in such dry etching equipment, since openings are provided in the electrodes, the electric field becomes non-uniform, which not only results in non-uniform processing, but also causes damage to the wafer as the electric field concentrates in some areas. The inventor has revealed that points occur.
［発明の目的］
本発明の目的は、処理を均一に行うことができる処理技
術を提供することにある。[Object of the Invention] An object of the present invention is to provide a processing technique that allows uniform processing.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
［発明の概要］
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.
すなわち、平行平板電極間に透孔を有する遮蔽部材を設
けることにより、電界の集中を引き起こすことなくして
処理対象物にガスが均等に供給されるようにしたもので
ある。That is, by providing a shielding member having a through hole between the parallel plate electrodes, gas is uniformly supplied to the object to be processed without causing concentration of electric field.
［実施例］
図は本発明の一実施例であるドライエツチング装置を示
す縦断面図である。[Embodiment] The figure is a longitudinal sectional view showing a dry etching apparatus which is an embodiment of the present invention.
本実施例において、このドライエツチング装置は、石英
ベルジャ等からなる処理室１１を備えており、処理室１
１は気密が保たれるように構成されている。処理室１１
には一対の平行平板電極１２．１３が下部および上部に
それぞれ配設されている。In this embodiment, this dry etching apparatus is equipped with a processing chamber 11 made of a quartz bell jar or the like.
1 is constructed to maintain airtightness. Processing room 11
A pair of parallel plate electrodes 12 and 13 are arranged at the bottom and top, respectively.
処理室１１の天井壁には、処理ガスとしてのエツチング
ガスを導入するための導入路１４が上部電極１３の真上
に開設され、処理室１１の底壁には排気路１５が室内を
真空引きするように接続されている。処理室１１の内部
には、石英等により平板形状に形成された遮蔽部材１６
が両電極１２．１３間において室内を仕切るように架設
されており、遮蔽部材１６には複数の透孔１７が中央部
に開設されている。上部電極１３には高周波電源１８が
接続されており、アースされた下部電極１２は、処理対
象物としてのウェハ１９を載置して保持し得るように構
成されている６
次に作用を説明する。An introduction path 14 for introducing an etching gas as a processing gas is provided on the ceiling wall of the processing chamber 11 directly above the upper electrode 13, and an exhaust path 15 is provided on the bottom wall of the processing chamber 11 for evacuating the chamber. connected to. Inside the processing chamber 11, a shielding member 16 formed in a flat plate shape from quartz or the like is provided.
is installed between both electrodes 12 and 13 to partition the room, and the shielding member 16 has a plurality of through holes 17 formed in the center. A high frequency power source 18 is connected to the upper electrode 13, and the grounded lower electrode 12 is configured to be able to place and hold a wafer 19 as an object to be processed.6 Next, the operation will be explained. .
ウェハ１９が下部電極１２上に載置され、処理室１１が
排気されてエツチングガスが導入されるとともに、両電
極１２．１３間に高周波電圧が印加されると、プラズマ
が形成され、これによる気体電気化学反応により、ウェ
ハ１９にエツチング処理が施される。When the wafer 19 is placed on the lower electrode 12, the processing chamber 11 is evacuated and etching gas is introduced, and a high frequency voltage is applied between the two electrodes 12 and 13, plasma is formed and the resulting gas is An etching process is performed on the wafer 19 by an electrochemical reaction.
このとき、導入路１４から処理室１１の遮蔽部材１６の
上側空間に導入されたエツチングガスは均一に拡散した
後、遮蔽部材１６の透孔１７を通って下側空間に流れ込
み、下部電極１２上のウェハ１９に対し周辺部中央部の
全体にわたって均等に供給される。このように、エツチ
ングガスが全体にわたって均等に供給されるため、ウェ
ハ１９に対するエツチングガスは全体にわたって均一に
施されることになる。At this time, the etching gas introduced from the introduction path 14 into the upper space of the shielding member 16 of the processing chamber 11 is uniformly diffused, and then flows into the lower space through the through hole 17 of the shielding member 16 and is etched onto the lower electrode 12. The wafer 19 is supplied evenly throughout the periphery and the center of the wafer 19. In this way, since the etching gas is uniformly supplied over the entire wafer 19, the etching gas is evenly applied over the entire wafer 19.
また、両電極１２．１３はいずれも平板形状に形成され
ているため、電界は均一に形成される。Furthermore, since both electrodes 12 and 13 are formed in a flat plate shape, the electric field is uniformly formed.
したがって、電界集中によりウェハ１９に加えられるダ
メージの発生は未然に回避され、前述したエツチングの
均一処理も確保されることになる。Therefore, damage to the wafer 19 due to electric field concentration can be avoided, and the uniform etching process described above can be ensured.
［効果］
（１）、一対の平行平板電極間に透孔を有する遮蔽部材
を介設することにより、ガスを処理対象物に均一に供給
することができるため、対象物における処理を全体にわ
たって均一に施すことができる。[Effects] (1) By interposing a shielding member with a through hole between a pair of parallel plate electrodes, gas can be uniformly supplied to the object to be processed, so that the processing on the object can be uniformly performed over the entire object. It can be applied to
（２）、遮蔽部材に透孔を開設することにより、電極を
変形させなくて済むため、電界が均一になり、電界集中
等の悪影響が回避できる。(2) By providing a through hole in the shielding member, the electrode does not need to be deformed, so the electric field becomes uniform and adverse effects such as electric field concentration can be avoided.
（３）、前記（２）により、ガスの均一供給による処理
の均一化が維持できる。(3) According to (2) above, uniformity of processing can be maintained by uniform supply of gas.
（４）、遮蔽部材を石英で形成することにより、処理対
象物としてのウェハに対する悪影響が回避できる。(4) By forming the shielding member from quartz, adverse effects on the wafer as the object to be processed can be avoided.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に附定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples, and it should be noted that various changes can be made without departing from the gist of the invention. Not even.
たとえば、遮蔽部材は石英に限らず、フッ素樹脂やステ
ンレス等のようなウェハ等処理対象物への悪影響を小さ
く制御できる材料を用いて形成してもよい。遮蔽部材は
平板状に限らず、膜状に形成してもよい。For example, the shielding member is not limited to quartz, but may be formed using a material such as fluororesin or stainless steel that can control the adverse effects on the processing target such as a wafer to a small extent. The shielding member is not limited to a flat plate shape, but may be formed in a film shape.
遮蔽部材の透孔は複数に限らず、単数でもよい。The number of through holes in the shielding member is not limited to a plurality, and may be a single number.
ガスはエツチングガスに限られないし、処理もエツチン
グに限られない。The gas is not limited to etching gas, and the processing is not limited to etching.
［利用分野］
以」二の説明では主として本発明者によってなされた発
明をその背景となった利用分野である半導体装置の製造
において使用されるドライエツチング装置に適用した場
合について説明したが、それに限定されるものではなく
、たとえば、Ｃ，ＶＤ装置やアッシャ除去装置等プラズ
マ反応を利用する処理装置に適用できる。[Field of Application] In the following explanation, the invention made by the present inventor is mainly applied to a dry etching apparatus used in the manufacture of semiconductor devices, which is the field of application that forms the background of the invention, but the present invention is not limited thereto. For example, the present invention can be applied to processing apparatuses that utilize plasma reactions, such as C and VD apparatuses and asher removal apparatuses.
図は本発明の一実施例を示す縦断面図である。
１１・・・処理室、１２．１３・・・電極、】４・・・
ガス導入路、１５・・・排気路、１６・・・遮蔽部材、
１７・・・透孔、１８・・・高周波電源、１９・・・ウ
ェハ（処理対象物）。
■
ｌ／The figure is a longitudinal sectional view showing an embodiment of the present invention. 11...Processing chamber, 12.13...Electrode, ]4...
Gas introduction path, 15... Exhaust path, 16... Shielding member,
17... Through hole, 18... High frequency power supply, 19... Wafer (processing target). ■ l/
Claims (1)
物が配され、処理室にガスを供給されて処理が（テわれ
る処理装置において、前記平行平板電極の間に透孔を有
する遮蔽部材が介設され、前記処理室の前記対象物が配
された側で排気され、その反対側の前−記ガスが供給さ
れることを特徴とする処理装置。 ２、透孔が、遮蔽部材に複数開設されていることを特徴
とする特許請求の範囲第１項記載の処理装置。 ３、遮蔽部材が、石英板で形成されていることを特徴と
する特許請求の範囲第１項記載の処理装置。[Scope of Claims] ] In a processing apparatus in which an object to be processed is disposed on one side of parallel plate electrodes provided in a processing chamber, and a gas is supplied to the processing chamber to carry out the process, there is a gap between the parallel plate electrodes. A processing apparatus characterized in that a shielding member having a through hole is interposed in the processing chamber, exhaust is exhausted from the side of the processing chamber where the object is arranged, and the gas is supplied from the opposite side.2. The processing device according to claim 1, characterized in that a plurality of through holes are formed in the shielding member. 3. The processing device according to claim 1, characterized in that the shielding member is formed of a quartz plate. The processing device according to scope 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16819083A JPS6060726A (en) | 1983-09-14 | 1983-09-14 | Treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16819083A JPS6060726A (en) | 1983-09-14 | 1983-09-14 | Treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6060726A true JPS6060726A (en) | 1985-04-08 |
Family
ID=15863450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16819083A Pending JPS6060726A (en) | 1983-09-14 | 1983-09-14 | Treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6060726A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5209803A (en) * | 1988-08-30 | 1993-05-11 | Matrix Integrated Systems, Inc. | Parallel plate reactor and method of use |
-
1983
- 1983-09-14 JP JP16819083A patent/JPS6060726A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5209803A (en) * | 1988-08-30 | 1993-05-11 | Matrix Integrated Systems, Inc. | Parallel plate reactor and method of use |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3115015B2 (en) | Vertical batch processing equipment | |
| JP2748886B2 (en) | Plasma processing equipment | |
| JP2680338B2 (en) | Electrostatic chuck device | |
| JPH0423429A (en) | Device and method for plasma processing of semiconductor device | |
| JPS63141318A (en) | Gas evacuating device for sample treatment | |
| JPH1074738A (en) | Wafer treating device | |
| JPS60123032A (en) | Plasma treatment and device thereof | |
| JPH0684837A (en) | Plasma treatment apparatus | |
| JPS6060726A (en) | Treating device | |
| JPH04297578A (en) | Plasma treating device | |
| JPH02198138A (en) | Electrode plate of parallel plate type dry etching apparatus | |
| JPH0573051B2 (en) | ||
| JPS5943880A (en) | Dry etching device | |
| JPS61245530A (en) | Processor | |
| JPS61292920A (en) | Plasma treater | |
| JPS60250631A (en) | Plasma etching device | |
| JPS60206027A (en) | Plasma processing apparatus | |
| JP2791795B2 (en) | Etching equipment | |
| JPH07142193A (en) | Microwave plasma treatment device | |
| KR940004101B1 (en) | Plasma etching device of parallel plate type | |
| JPH02141576A (en) | Plasma process device | |
| JPS62280372A (en) | Plasma vapor growth device | |
| JPH0637052A (en) | Semiconductor processing device | |
| JPH03129817A (en) | Plasma treatment device | |
| JP3865235B2 (en) | Plasma processing equipment |