JPH1074738A - Wafer treating device - Google Patents
Wafer treating deviceInfo
- Publication number
- JPH1074738A JPH1074738A JP20239797A JP20239797A JPH1074738A JP H1074738 A JPH1074738 A JP H1074738A JP 20239797 A JP20239797 A JP 20239797A JP 20239797 A JP20239797 A JP 20239797A JP H1074738 A JPH1074738 A JP H1074738A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- reaction gas
- flow
- exhaust
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体処理装置の１つで
あるウェーハ処理装置、特に１枚ずつ処理する枚葉式ウ
ェーハ処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing apparatus which is one of semiconductor processing apparatuses, and more particularly to a single wafer processing apparatus for processing one wafer at a time.
【０００２】[0002]
【従来の技術】半導体素子を製造する工程の中に、熱エ
ネルギ・プラズマ放電等で励起されたガス分子を利用し
て試料台上のシリコンウェーハをエッチング、或は化学
蒸着（ＣＶＤ）等の処理を行う工程がある。2. Description of the Related Art In a process of manufacturing a semiconductor device, a silicon wafer on a sample table is etched using gas molecules excited by thermal energy, plasma discharge or the like, or a process such as chemical vapor deposition (CVD) is performed. Is performed.
【０００３】これは気密な処理室内に、ウェーハを装入
し、該処理室内を真空に排気し、更に反応ガスを導入
し、高周波電力によって発生させたプラズマのイオン、
又はラジカル（中性活性種）を利用して、或はヒータ等
の熱を利用してエッチング、或は化学蒸着（ＣＶＤ）等
の処理を行うものである。[0003] In this method, a wafer is charged into an airtight processing chamber, the processing chamber is evacuated to a vacuum, a reaction gas is introduced, and plasma ions generated by high-frequency power,
Alternatively, etching, chemical vapor deposition (CVD), or the like is performed using radicals (neutral active species) or using heat from a heater or the like.
【０００４】従来のウェーハ処理装置の中の、特にカソ
ード結合方式平行平板型プラズマエッチング装置の概略
を図３により説明する。FIG. 3 is a schematic diagram of a conventional parallel plate type plasma etching apparatus of the conventional wafer processing apparatus, particularly a cathode bonding type.
【０００５】処理室１の内部に相対向して電極２，３が
設けられ該電極２には高周波電源４が接続されている。
前記電極の一方、カソード電極２側にウェーハ６が装填
される。前記電極２，３は冷却系５によって冷却されて
おり、又前記電極の他方、アノード電極３からはガス導
入系７より反応ガスが導入される様になっている。[0005] Electrodes 2 and 3 are provided facing each other inside the processing chamber 1, and a high-frequency power supply 4 is connected to the electrodes 2.
A wafer 6 is loaded on one of the electrodes, the cathode electrode 2 side. The electrodes 2 and 3 are cooled by a cooling system 5, and a reaction gas is introduced from a gas introduction system 7 from the other of the electrodes, the anode electrode 3.
【０００６】更に、前記処理室１には排気系８が接続さ
れており、前記反応ガスを排気する様になっている。図
３中、９は流量調整弁、１０は排気ポンプである。Further, an exhaust system 8 is connected to the processing chamber 1 so as to exhaust the reaction gas. In FIG. 3, 9 is a flow control valve, and 10 is an exhaust pump.
【０００７】ウェーハ６のプラズマエッチング処理は、
一般に次の様に行われる。ウェーハ６が装入され、真空
排気された前記処理室１内に反応ガスを前記ガス導入系
７から前記アノード電極３の下面又はアノード電極３の
外周より導入する。前記排気系８により処理室１内を所
要の圧力にし、カソード電極２に高周波電力を印加しプ
ラズマを発生させる。[0007] The plasma etching of the wafer 6
Generally, it is performed as follows. A reaction gas is introduced from the gas introduction system 7 from the lower surface of the anode electrode 3 or the outer periphery of the anode electrode 3 into the processing chamber 1 into which the wafer 6 has been loaded and evacuated. The inside of the processing chamber 1 is set to a required pressure by the exhaust system 8, and high-frequency power is applied to the cathode electrode 2 to generate plasma.
【０００８】前記ウェーハ６はプラズマ内のラジカル、
高周波電極近傍に誘起されるセルフバイアス電圧により
加速された反応性ガスイオンとの相乗効果でエッチング
される。The wafer 6 contains radicals in the plasma,
Etching is performed by a synergistic effect with reactive gas ions accelerated by a self-bias voltage induced near the high-frequency electrode.
【０００９】[0009]
【発明が解決しようとする課題】前記排気系８の前記処
理室１に対する接続位置は、カソード電極２の中心部に
冷却系５等が設けられている為、該カソード電極２と同
心の位置に設けることが難しく、又構造的に複雑になる
為、前記カソード電極２の中心から外れた位置になって
いる。前記排気系８が前記処理室１と連通する排気孔１
１が前記カソード電極２と同心でない為、前記カソード
電極２上に同心に装填されるウェーハ６近傍の反応ガス
の流れに偏りが生じる。この為、ウェーハ６のエッチン
グ処理等、ウェーハ処理の均一性に問題を生ずる。The connection position of the exhaust system 8 to the processing chamber 1 is set at a position concentric with the cathode electrode 2 because the cooling system 5 and the like are provided at the center of the cathode electrode 2. Since it is difficult to provide it and the structure becomes complicated, it is located at a position off the center of the cathode electrode 2. The exhaust port 1 in which the exhaust system 8 communicates with the processing chamber 1
Since 1 is not concentric with the cathode electrode 2, the flow of the reaction gas near the wafer 6 concentrically loaded on the cathode electrode 2 is biased. This causes a problem in the uniformity of the wafer processing such as the etching processing of the wafer 6.
【００１０】図４で示す様に排気孔１１が設けられたと
して、ウェーハ６の中心を０、排気孔１１側を−、反排
気孔１１側を＋とすると、同一ウェーハのエッチング速
度をみると図５の様に排気孔１１側で速くなるという不
均一性を示す。Assuming that the exhaust hole 11 is provided as shown in FIG. 4, if the center of the wafer 6 is 0, the exhaust hole 11 side is-, and the anti-exhaust hole 11 side is +, the etching rate of the same wafer is considered. As shown in FIG. 5, the non-uniformity of increasing the speed on the exhaust hole 11 side is shown.
【００１１】本発明は斯かる実情を鑑み、ウェーハ近傍
での反応ガスの流れを均一にし、ウェーハ処理の均一性
を改善しようとするものである。The present invention has been made in view of the above circumstances, and has an object to make the flow of a reaction gas near a wafer uniform and improve the uniformity of wafer processing.
【００１２】[0012]
【課題を解決するための手段】本発明は、処理室内に設
けた試料台上にウェーハを装填し、反応ガス雰囲気下で
熱エネルギ・プラズマ放電等で励起されたガス分子を利
用しウェーハを処理するウェーハ処理装置に於いて、前
記処理室内を複数の分散孔を有するバッフルベースによ
り反応ガス導入側と反応ガス排出側に仕切り、前記各分
散孔に排気コンダクタンス調整孔を有するバッフルプレ
ートをそれぞれ設け、該バッフルプレートの排気コンダ
クタンス調整孔の大きさを位置により変えると共に反応
ガスの流れが均一となる様取付位置を選択可能としたこ
とを特徴とするものである。According to the present invention, a wafer is loaded on a sample stage provided in a processing chamber, and the wafer is processed by utilizing gas molecules excited by thermal energy / plasma discharge in a reaction gas atmosphere. In the wafer processing apparatus, the processing chamber is partitioned into a reaction gas introduction side and a reaction gas discharge side by a baffle base having a plurality of dispersion holes, and a baffle plate having an exhaust conductance adjustment hole is provided in each of the dispersion holes. The size of the exhaust conductance adjusting hole of the baffle plate is changed depending on the position, and the mounting position can be selected so that the flow of the reaction gas becomes uniform.
【００１３】反応ガスの導入位置、或は排出位置が処理
室の中心に無く偏在していてもウェーハに沿って流れる
反応ガスは、バッフルプレートにより整流され、ウェー
ハ全面に亘って均一化される。又反応ガスの整流状態は
バッフルプレートの取付位置を変更することで最適状態
を選択できる。The reaction gas flowing along the wafer is rectified by the baffle plate even if the introduction position or the discharge position of the reaction gas is not located at the center of the processing chamber and is uneven, and is uniformed over the entire surface of the wafer. The optimum condition of the rectification state of the reaction gas can be selected by changing the mounting position of the baffle plate.
【００１４】[0014]
【発明の実施の形態】以下、図１、図２に基づき本発明
の実施の形態を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.
【００１５】尚、図１中、図３中で示したものと同一の
ものには同符号を付してある。In FIG. 1, the same components as those shown in FIG. 3 are denoted by the same reference numerals.
【００１６】カソード電極２の周囲、処理室１を上下に
仕切る流量分布調整手段２１を設ける。該流量分布調整
手段２１はバッフルベース１４、バッフルプレート１５
ａ，１５ｂ，１５ｃ，…から構成される。前記カソード
電極２の周囲と処理室１との境界位置にバッフルベース
１４を設け、該バッフルベース１４には所要ピッチ円上
に沿って、同一径の分散孔１３を所要数穿設する。各分
散孔１３に対して、バッフルプレート１５ａ，１５ｂ，
１５ｃ，…を前記バッフルベース１４に重合させ取付け
る。各バッフルプレート１５ａ，１５ｂ，１５ｃ，…に
はそれぞれ排気コンダクタンス調整孔１６ａ，１６ｂ，
１６ｃ，…が設けられており、該排気コンダクタンス調
整孔１６ａ，１６ｂ，１６ｃ，…はその位置によって、
孔径が異なっている。即ち、前記排気孔１１に近いバッ
フルプレート１５については、排気コンダクタンス調整
孔１６の径が小さく、前記排気孔１１を離れるに従い排
気コンダクタンス調整孔１６の径が大きくなっている。There is provided a flow rate distribution adjusting means 21 for vertically partitioning the processing chamber 1 around the cathode electrode 2. The flow distribution adjusting means 21 includes a baffle base 14, a baffle plate 15
a, 15b, 15c,... A baffle base 14 is provided at a boundary position between the periphery of the cathode electrode 2 and the processing chamber 1, and a required number of dispersion holes 13 having the same diameter are formed in the baffle base 14 along a required pitch circle. Baffle plates 15a, 15b,
15c are superimposed on the baffle base 14 and attached. Each of the baffle plates 15a, 15b, 15c,... Has an exhaust conductance adjusting hole 16a, 16b,
. Are provided, and the exhaust conductance adjusting holes 16a, 16b, 16c,.
The pore size is different. That is, in the baffle plate 15 near the exhaust hole 11, the diameter of the exhaust conductance adjustment hole 16 is small, and the diameter of the exhaust conductance adjustment hole 16 increases as the distance from the exhaust hole 11 increases.
【００１７】而して、前記排気孔１１の近傍では、流路
抵抗が大きくなり、排気孔１１から離れるに従い流路抵
抗が小さくなる。この為、排気孔１１近傍で該排気孔１
１に対して反応ガスが流れやすい傾向が改善され、反応
ガスの流れはウェーハ６全面に亘って、均一となる。Thus, the flow path resistance increases near the exhaust hole 11, and decreases as the distance from the exhaust hole 11 increases. For this reason, the exhaust hole 1 near the exhaust hole 11
1, the tendency of the reaction gas to flow easily is improved, and the flow of the reaction gas becomes uniform over the entire surface of the wafer 6.
【００１８】ここで、前記反応ガスの流れの偏りは、処
理室１内の圧力、ガス流量、電極間隔、電極外周から排
気孔１１までの容積等、処理条件に影響される。従っ
て、前記バッフルプレート１５ａ，１５ｂ，１５ｃ，…
の取付け位置は、必ずしも小径の排気コンダクタンス調
整孔１６のバッフルプレート１５が前記排気孔１１の近
傍に位置するとは限らない。要は、反応ガスの流れが均
一になる様に、バッフルプレート１５ａ，１５ｂ，１５
ｃ，…の位置を適宜選択すればよい。Here, the bias of the flow of the reaction gas is affected by the processing conditions such as the pressure in the processing chamber 1, the gas flow rate, the electrode interval, the volume from the electrode outer periphery to the exhaust hole 11, and the like. Therefore, the baffle plates 15a, 15b, 15c,.
Is not necessarily located at the position where the baffle plate 15 of the small-diameter exhaust conductance adjusting hole 16 is located near the exhaust hole 11. The point is that the baffle plates 15a, 15b, 15
The positions of c,... may be appropriately selected.
【００１９】尚、上記実施の形態に於いて、分散孔、排
気コンダクタンス調整孔は必ずしも円である必要はな
く、楕円であっても、矩形であってもよい。又、上記実
施の形態では、反応ガスの導入を上側電極（本実施の形
態ではアノード電極）から導入することを想定している
が、下側電極（本実施の形態ではカソード電極）から導
入する様にしてもよく、この場合排気孔は上側電極側に
設けられ、排気系も上側電極側に連通される。In the above embodiment, the dispersion holes and the exhaust conductance adjusting holes need not necessarily be circular, but may be elliptical or rectangular. In the above embodiment, the reaction gas is assumed to be introduced from the upper electrode (the anode electrode in the present embodiment), but is introduced from the lower electrode (the cathode electrode in the present embodiment). In this case, the exhaust hole is provided on the upper electrode side, and the exhaust system is also connected to the upper electrode side.
【００２０】[0020]
【発明の効果】以上述べた如く本発明によれば、排気孔
が中心以外の偏った位置に設けられた場合でも、ウェー
ハ全面に亘って反応ガスの流れを均一にすることがで
き、ウェーハの均一処理を可能とし、歩留まりの向上、
製品品質の向上に寄することができる。As described above, according to the present invention, even when the exhaust hole is provided at a deviated position other than the center, the flow of the reaction gas can be made uniform over the entire surface of the wafer, and Enables uniform processing, improves yield,
It can help improve product quality.
【図１】本発明の実施の形態を示す概略断面図である。FIG. 1 is a schematic sectional view showing an embodiment of the present invention.
【図２】図１のＡ−Ａ矢視図である。FIG. 2 is a view as viewed in the direction of arrows AA in FIG. 1;
【図３】従来例の概略断面図である。FIG. 3 is a schematic sectional view of a conventional example.
【図４】図３のＢ−Ｂ矢視図である。FIG. 4 is a view taken in the direction of arrows BB in FIG. 3;
【図５】従来例に於けるウェーハの各位置に於けるエッ
チング速度を示す線図である。FIG. 5 is a diagram showing an etching rate at each position of a wafer in a conventional example.
１ 処理室 ２ カソード電極 ３ アノード電極 ４ 高周波電源 ６ ウェーハ １１ 排気孔 １４ バッフルベース １５ バッフルプレート １６ 排気コンダクタンス調整孔 ２１ 流量分布調整手段 DESCRIPTION OF SYMBOLS 1 Processing chamber 2 Cathode electrode 3 Anode electrode 4 High frequency power supply 6 Wafer 11 Exhaust hole 14 Baffle base 15 Baffle plate 16 Exhaust conductance adjusting hole 21 Flow rate adjusting means
Claims (1)
装填し、反応ガス雰囲気下で熱エネルギ・プラズマ放電
等で励起されたガス分子を利用しウェーハを処理するウ
ェーハ処理装置に於いて、前記処理室内を複数の分散孔
を有するバッフルベースにより反応ガス導入側と反応ガ
ス排出側に仕切り、前記各分散孔に排気コンダクタンス
調整孔を有するバッフルプレートをそれぞれ設け、該バ
ッフルプレートの排気コンダクタンス調整孔の大きさを
位置により変えると共に反応ガスの流れが均一となる様
取付位置を選択可能としたことを特徴とするウェーハ処
理装置。In a wafer processing apparatus, a wafer is loaded on a sample table provided in a processing chamber, and the wafer is processed using gas molecules excited by thermal energy, plasma discharge or the like in a reaction gas atmosphere. The processing chamber is partitioned into a reaction gas introduction side and a reaction gas discharge side by a baffle base having a plurality of dispersion holes, a baffle plate having an exhaust conductance adjustment hole is provided in each of the dispersion holes, and an exhaust conductance adjustment hole of the baffle plate is provided. A wafer processing apparatus characterized in that the size of the wafer can be changed depending on the position and the mounting position can be selected so that the flow of the reaction gas becomes uniform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20239797A JPH1074738A (en) | 1997-07-11 | 1997-07-11 | Wafer treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20239797A JPH1074738A (en) | 1997-07-11 | 1997-07-11 | Wafer treating device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7178136A Division JP2927211B2 (en) | 1995-06-21 | 1995-06-21 | Wafer processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1074738A true JPH1074738A (en) | 1998-03-17 |
Family
ID=16456828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20239797A Pending JPH1074738A (en) | 1997-07-11 | 1997-07-11 | Wafer treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1074738A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6478923B1 (en) | 1999-08-20 | 2002-11-12 | Nec Corporation | Vacuum operation apparatus |
| JP2003504891A (en) * | 1999-07-13 | 2003-02-04 | ノードソン コーポレーション | High-speed symmetric plasma processing system |
| JP2006303309A (en) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | Plasma treatment apparatus |
| KR100694799B1 (en) | 2006-04-20 | 2007-03-14 | 세메스 주식회사 | Semiconductor ashing apparatus |
| JP2007533138A (en) * | 2004-04-08 | 2007-11-15 | アプライド マテリアルズ インコーポレイテッド | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| JP2010514216A (en) * | 2006-12-20 | 2010-04-30 | ラム リサーチ コーポレーション | Apparatus and method for gas flow conductance control in a capacitively coupled plasma process chamber |
| WO2011005620A3 (en) * | 2009-07-08 | 2011-03-03 | Applied Materials, Inc. | Tunable gas flow equalizer |
| JP2012146854A (en) * | 2011-01-13 | 2012-08-02 | Tokyo Electron Ltd | Substrate processing apparatus |
| KR101490431B1 (en) * | 2008-02-15 | 2015-02-11 | 엘아이지에이디피 주식회사 | Plasma processing apparatus for control of baffle opening volume |
| JP2020136062A (en) * | 2019-02-19 | 2020-08-31 | 東京エレクトロン株式会社 | Substrate processing apparatus |
| WO2023091268A1 (en) * | 2021-11-22 | 2023-05-25 | Applied Materials, Inc. | Plasma chamber with a multiphase rotating gas cross-flow and peripheral conductance control rings |
-
1997
- 1997-07-11 JP JP20239797A patent/JPH1074738A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003504891A (en) * | 1999-07-13 | 2003-02-04 | ノードソン コーポレーション | High-speed symmetric plasma processing system |
| JP4937474B2 (en) * | 1999-07-13 | 2012-05-23 | ノードソン コーポレーション | High speed symmetrical plasma processing system |
| US6478923B1 (en) | 1999-08-20 | 2002-11-12 | Nec Corporation | Vacuum operation apparatus |
| JP2007533138A (en) * | 2004-04-08 | 2007-11-15 | アプライド マテリアルズ インコーポレイテッド | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| JP2006303309A (en) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | Plasma treatment apparatus |
| KR100694799B1 (en) | 2006-04-20 | 2007-03-14 | 세메스 주식회사 | Semiconductor ashing apparatus |
| US8784948B2 (en) | 2006-12-20 | 2014-07-22 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
| JP2010514216A (en) * | 2006-12-20 | 2010-04-30 | ラム リサーチ コーポレーション | Apparatus and method for gas flow conductance control in a capacitively coupled plasma process chamber |
| KR101490431B1 (en) * | 2008-02-15 | 2015-02-11 | 엘아이지에이디피 주식회사 | Plasma processing apparatus for control of baffle opening volume |
| US8398814B2 (en) | 2009-07-08 | 2013-03-19 | Applied Materials, Inc. | Tunable gas flow equalizer |
| WO2011005620A3 (en) * | 2009-07-08 | 2011-03-03 | Applied Materials, Inc. | Tunable gas flow equalizer |
| KR101321677B1 (en) * | 2011-01-13 | 2013-10-23 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus |
| JP2012146854A (en) * | 2011-01-13 | 2012-08-02 | Tokyo Electron Ltd | Substrate processing apparatus |
| US8968475B2 (en) | 2011-01-13 | 2015-03-03 | Tokyo Electron Limited | Substrate processing apparatus |
| TWI483300B (en) * | 2011-01-13 | 2015-05-01 | Tokyo Electron Ltd | Substrate processing device |
| JP2020136062A (en) * | 2019-02-19 | 2020-08-31 | 東京エレクトロン株式会社 | Substrate processing apparatus |
| WO2023091268A1 (en) * | 2021-11-22 | 2023-05-25 | Applied Materials, Inc. | Plasma chamber with a multiphase rotating gas cross-flow and peripheral conductance control rings |
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