JPS6059078A - Dry etching apparatus - Google Patents
Dry etching apparatusInfo
- Publication number
- JPS6059078A JPS6059078A JP16656283A JP16656283A JPS6059078A JP S6059078 A JPS6059078 A JP S6059078A JP 16656283 A JP16656283 A JP 16656283A JP 16656283 A JP16656283 A JP 16656283A JP S6059078 A JPS6059078 A JP S6059078A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- dry etching
- communicate
- etching gas
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
本発明は、平行平板電極型のドライエツチング装置に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a parallel plate electrode type dry etching apparatus.
半導体デバイスの製造工程におけるエツチング処理には
、いわゆる湿式のエツチング装置に代えて、排液処理の
問題が無く、かつ微細なパターンのエツチングも可能な
各種のドライエツチング装置が提供されている。その一
つのタイプとして、平板状の上部電極と下部電極とが互
いに平行に配設される。いわゆる平行平板電極型と呼ば
れるドライエツチング装置が用いられている。しかしな
がら、このタイプの装置には。For etching processing in the manufacturing process of semiconductor devices, various dry etching apparatuses are provided in place of so-called wet etching apparatuses, which do not have the problem of drainage treatment and are also capable of etching fine patterns. In one type, a flat upper electrode and a lower electrode are arranged parallel to each other. A so-called parallel plate electrode type dry etching apparatus is used. However, for this type of device.
エンチングガスの注入方法あるいは排気方法によってク
エハ内でのエツチング速度のばらつきが大きくなるとい
う欠点がある。すなわち、エンチングガスを上部対向電
極から注木し、チャンバ内の下部から排気する方法であ
っても、ウェハ内でのガスの供給が不均一であるため、
エッチャントの偏りが生じ、エツチング速度のばらつき
が大きかったり２反応生成物等のデポジションが起った
りして、良好なエツチングを行うことが難しい。There is a drawback that the etching rate within the wafer varies greatly depending on the method of injecting or exhausting the etching gas. In other words, even if the etching gas is injected from the upper counter electrode and exhausted from the lower part of the chamber, the gas supply within the wafer is uneven;
It is difficult to perform good etching because the etchant is biased, the etching rate varies widely, and two reaction products are deposited.
本発明は、このような欠点に鑑み、ウェハ内でのエツチ
ング速度のばらつきが小さく、かつ高速でエツチングで
きるドライエンチング装置を提供することを目的とする
。SUMMARY OF THE INVENTION In view of these drawbacks, it is an object of the present invention to provide a dry etching apparatus that has small variations in etching speed within a wafer and can perform etching at high speed.
本発明は、上部電極にエツチングガス注入口と排気口と
を複数個設けて、上部電極を通してエツチングガス注入
と排気とを同時（−し力・もウェハに対して均一に行う
ことができるようにしたものである。In the present invention, a plurality of etching gas injection ports and exhaust ports are provided in the upper electrode so that the etching gas can be injected and exhausted simultaneously (and evenly applied to the wafer) through the upper electrode. This is what I did.
以下に９本発明の実施例を図面を参照して説明する。Below, nine embodiments of the present invention will be described with reference to the drawings.
第１図は１本発明による平行平板電極型ドライエツチン
グ装置の一実施例を縦断面図で示す。FIG. 1 shows a longitudinal sectional view of an embodiment of a parallel plate electrode type dry etching apparatus according to the present invention.
真空チャンバ１内の下部側にウエノ・４を載置する平板
状の下部電極６が設けられてｌｚＸる。下部電極乙に対
向させてその上方には上部電極２が設けられている。７
は下部電極ろ（＝接続した高周波電源である。A flat plate-shaped lower electrode 6 on which the wafer 4 is placed is provided on the lower side of the vacuum chamber 1. An upper electrode 2 is provided above and opposite to the lower electrode B. 7
is the lower electrode (= connected high frequency power source).
上部電極２は、ダクト状にして内部を仕切板２１により
２分し、一方をエツチングガス注入系８に、他方を排気
系９にそれぞれ連通させている。また、下部電極６と対
向している上部電極２の下面全面に、細長いエンチング
ガス注入口５と排気口６とを交互に設けている。そして
。The upper electrode 2 is shaped like a duct and divided into two parts by a partition plate 21, with one part communicating with the etching gas injection system 8 and the other part communicating with the exhaust system 9. Further, elongated etching gas inlets 5 and exhaust ports 6 are alternately provided on the entire lower surface of the upper electrode 2 facing the lower electrode 6. and.
排気口６はすべて排気系９に連通させており。All exhaust ports 6 are connected to an exhaust system 9.
注入口５は上部電極２の内壁に設けたダクト２２により
排気系９の空間から仕切り、しかもすべて注入系８に連
通ずるよう構成している。The injection port 5 is partitioned off from the space of the exhaust system 9 by a duct 22 provided on the inner wall of the upper electrode 2, and is configured to communicate with the injection system 8 entirely.
以上のような構成により、エツチングガス注入と排気と
を同時かつ均一に行い、ウェハ４上でのガスの流れを最
小限におさえることができるので、ウェハ４には常に新
しいエッチャントが供給され、きわめて均一性の良い高
速のエツチングを行うことができる。本実施例では、ウ
ェハ４のエツチング速度は１５％以下となり。With the above configuration, the etching gas can be injected and exhausted simultaneously and uniformly, and the gas flow on the wafer 4 can be minimized, so that the wafer 4 is constantly supplied with new etchant, making it extremely High-speed etching with good uniformity can be performed. In this embodiment, the etching rate of the wafer 4 is 15% or less.
エツチング速度も大きくなる。The etching speed also increases.
なお、実施例では、カソードカップリング方式のりアク
ティブイオンエツチング装置について説明したが、アノ
ードカップリング方式のプラズマエツチング装置にも適
用できることは言うまでもない。また、電極間隔を５〜
２０ｗ程度に小さくすることで、１ ｐｍ／ｍｉｎ （
例えば、Ａ１゜Ｐｏ１ｙ−８ｉ）以上のエツチング速度
を得ることも可能である。更に、上部電極２の形状につ
いても実施例の形状に限定されるものではない。In the embodiment, a cathode coupling type active ion etching apparatus has been described, but it goes without saying that the present invention can also be applied to an anode coupling type plasma etching apparatus. Also, the electrode spacing was set to 5~
By reducing the power to around 20w, the power consumption is reduced to 1 pm/min (
For example, it is possible to obtain an etching rate of A1°Po1y-8i) or higher. Furthermore, the shape of the upper electrode 2 is not limited to the shape of the embodiment.
第１図は本発明による平行平板電極型ドライエツチング
装置の縦断面図。
図中、１は真空チャンバ、２は上部電極、５は下部電極
、４はウェハ、５はエツチングガス注入口、６は排気１
］、７は高周波電源、８はエツチングガス注入系、９は
排気系。
第１図FIG. 1 is a longitudinal sectional view of a parallel plate electrode type dry etching apparatus according to the present invention. In the figure, 1 is a vacuum chamber, 2 is an upper electrode, 5 is a lower electrode, 4 is a wafer, 5 is an etching gas injection port, and 6 is an exhaust gas 1
], 7 is a high frequency power supply, 8 is an etching gas injection system, and 9 is an exhaust system. Figure 1
Claims (1)
該下部電極に平行に対向する平板状の上部電極とを内蔵
する平行平板電極型のドライエツチング装置において、
前記上部電極：ニエッチングガス注入口と、排気口とを
複数個設け。 各注入口はエツチングガス注入系路へ、各排気口は排気
系路へそれぞれ連通するよう構成したことを特徴とする
ドライエツチング装置。[Claims] 1. A flat lower electrode on which a substrate to be etched is placed;
In a parallel plate electrode type dry etching device that includes a flat upper electrode facing parallel to the lower electrode,
The upper electrode is provided with a plurality of etching gas inlets and exhaust ports. A dry etching apparatus characterized in that each injection port is configured to communicate with an etching gas injection system path, and each exhaust port is configured to communicate with an exhaust system path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16656283A JPS6059078A (en) | 1983-09-12 | 1983-09-12 | Dry etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16656283A JPS6059078A (en) | 1983-09-12 | 1983-09-12 | Dry etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6059078A true JPS6059078A (en) | 1985-04-05 |
| JPS6366394B2 JPS6366394B2 (en) | 1988-12-20 |
Family
ID=15833560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16656283A Granted JPS6059078A (en) | 1983-09-12 | 1983-09-12 | Dry etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6059078A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63157422A (en) * | 1986-12-22 | 1988-06-30 | Tokyo Electron Ltd | Ashing method |
| JPH01108930U (en) * | 1988-01-14 | 1989-07-24 | ||
| JPH02184022A (en) * | 1989-01-11 | 1990-07-18 | Koujiyundo Kagaku Kenkyusho:Kk | Cvd electrode |
| JPH0319318A (en) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | Processing device for material to be processed |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57131372A (en) * | 1981-02-05 | 1982-08-14 | Seiko Epson Corp | Plasma etching device |
-
1983
- 1983-09-12 JP JP16656283A patent/JPS6059078A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57131372A (en) * | 1981-02-05 | 1982-08-14 | Seiko Epson Corp | Plasma etching device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63157422A (en) * | 1986-12-22 | 1988-06-30 | Tokyo Electron Ltd | Ashing method |
| JPH01108930U (en) * | 1988-01-14 | 1989-07-24 | ||
| JPH02184022A (en) * | 1989-01-11 | 1990-07-18 | Koujiyundo Kagaku Kenkyusho:Kk | Cvd electrode |
| JPH0319318A (en) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | Processing device for material to be processed |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6366394B2 (en) | 1988-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6059078A (en) | Dry etching apparatus | |
| JPH0423429A (en) | Device and method for plasma processing of semiconductor device | |
| JP2550037B2 (en) | Dry etching method | |
| JPH0437124A (en) | Plasma processor | |
| JPS62299031A (en) | Electrode structure of parallel plate etching system | |
| JP3812966B2 (en) | Plasma processing apparatus and plasma processing method | |
| JPS61174388A (en) | Etching device | |
| JPS63166235A (en) | Parallel flat plate type plasma cvd system | |
| JPH02198138A (en) | Electrode plate of parallel plate type dry etching apparatus | |
| JPS57131372A (en) | Plasma etching device | |
| JPS6324623A (en) | Plasma treatment equipment | |
| JPS6345468B2 (en) | ||
| JPS5964779A (en) | Multi-chamber dry etching apparatus | |
| JPS62221116A (en) | Plasma treating apparatus | |
| JPS62183530A (en) | Dry etching apparatus | |
| JPS5919326A (en) | Plasma processor | |
| KR100264208B1 (en) | Apparatus for etching wafer | |
| JPH118225A (en) | Parallel plate plasma treatment apparatus | |
| JPS63107025A (en) | Treater | |
| KR20030002087A (en) | Dry etching apparatus having shower head for semiconductor processing | |
| JPH0196931A (en) | Plasma etching device | |
| JPS5966120A (en) | Semiconductor manufacturing device | |
| JPS6459916A (en) | Batch type reactive ion etching device | |
| JPS6418224A (en) | Semiconductor manufacture equipment | |
| JPH0586654B2 (en) |