JPS6055624A - Device for exposing to x-ray - Google Patents
Device for exposing to x-rayInfo
- Publication number
- JPS6055624A JPS6055624A JP58163223A JP16322383A JPS6055624A JP S6055624 A JPS6055624 A JP S6055624A JP 58163223 A JP58163223 A JP 58163223A JP 16322383 A JP16322383 A JP 16322383A JP S6055624 A JPS6055624 A JP S6055624A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- shutter
- light
- sor
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は牛導体集積回路の微細パターンを軟Ｘ線を用い
て転写形成するＸ線リングラフィに係り、特に軟Ｘ線光
源としてシンクロトロン軟道放射光（以下、ｓｏＲと称
す）を用いたＸ線露光装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to X-ray phosphorography for transferring and forming fine patterns on conductor integrated circuits using soft The present invention relates to an X-ray exposure apparatus using synchrotron radiation (hereinafter referred to as soR).
第１図はｓ ｏ ｉｔを用いたＸ線露光装置の概略図で
ある。この図において％ １は電子シンクロトロン、２
はシンクロトロン軌道放射光８０Ｒ，４はＸ線７２２％
５はＳ１ウエハなどの被露光試料、８はマスク・ウェハ
のアライメント光学系である。FIG. 1 is a schematic diagram of an X-ray exposure apparatus using SOIT. In this figure, %1 is an electron synchrotron, 2
is synchrotron orbital synchrotron radiation 80R, 4 is X-ray 722%
5 is a sample to be exposed such as an S1 wafer, and 8 is a mask/wafer alignment optical system.
マスク・ウェハの相７ｊ位置合せはＸ線マスク４および
被露光試料５に形成されたアライメントマーク６および
７をアライメント光学系により光センサ９上に結像し、
両マーク間のずれ量を検出する方法で行なわれる。３は
ＳＯＲ用シャッタで従来、８０Ｒを完全に遮蔽する金属
材料で主に作られ、マスク魯ウェハのアライメント完了
後、Ｘ線マスク４上にＳＯＲを露光する。The mask/wafer phase 7j is aligned by imaging the alignment marks 6 and 7 formed on the X-ray mask 4 and the exposed sample 5 onto the optical sensor 9 by an alignment optical system.
This is done by detecting the amount of deviation between both marks. Reference numeral 3 denotes an SOR shutter, which is conventionally made mainly of a metal material that completely shields the 80R, and exposes the SOR onto the X-ray mask 4 after the alignment of the mask wafer is completed.
１０は前記アライメント光学系におけるマーク検出用の
光源である。従来はＩｃｅ−Ｎｅレーザや水銀灯等が使
用されているが１発熱が多いためうンプハウスの特別の
冷却系が必要なことや発光線中の熱線を除去するための
光学系の工夫が必要となる。これらの問題はアライメン
ト光学系を複雑にするとともに、マスク・ウェハのアラ
イメント精度を劣化させる原因となっていた。10 is a light source for mark detection in the alignment optical system. Conventionally, Ice-Ne lasers, mercury lamps, etc. have been used, but because they generate a lot of heat, a special cooling system for the pump house is required, and an optical system must be devised to remove the hot rays in the emitted light. . These problems complicate the alignment optical system and cause deterioration in mask/wafer alignment accuracy.
本発明は上記従来技術の実情に鑑みてなされたもので、
その目的は、従来必要であったアライメントマーク検出
用の光源を不要として、構造が簡略なＸ線露光装置を提
供することにある。The present invention has been made in view of the above-mentioned actual state of the prior art,
The purpose is to provide an X-ray exposure apparatus with a simple structure that eliminates the need for a light source for detecting alignment marks, which was conventionally necessary.
上記目的を達成するために１本発明のＸ線露光装置の特
徴は、５ＯＲＫ営まれる高輝度の紫外〜可視領域の光を
マスク・ウェハアライメント用のマーク検出光として利
用することにあシ、上記光に対し高透過率の材料でＸ線
リングラフィに必要な軟Ｘ線波長領域の８０Ｒ，が容易
に遮蔽でき、かつ％ＳＯＲの前記波長領域の光がアライ
メントマーク検出に十分利用できるほど高輝度であるこ
とに着目した結果、発明できたものである。In order to achieve the above object, the X-ray exposure apparatus of the present invention is characterized in that it utilizes high-intensity light in the ultraviolet to visible range operated by 5ORK as mark detection light for mask/wafer alignment. A material with high transmittance to light that can easily block the soft X-ray wavelength region of 80R required for X-ray phosphorography, and is so bright that the light in the wavelength region of %SOR can be used sufficiently for alignment mark detection. This invention was made possible by focusing on this fact.
以下、本発明の詳細を実施例により説明する。 Hereinafter, the details of the present invention will be explained with reference to Examples.
〈実施例〉
第２図曲線ａは電子の加速エネルギーＥ ＝ １．００
ｅＶ、加速’［ｆｉＩ ＝ １００ｍＡ、 １ｋＬ子軌
道の曲率半径ρ＝１ｍにおいて発生するＳＯＲのスペク
トルを示したものである。図中の一点破線すは通常使用
きれる５ｉａＮ４．８１０２ 、ＢＮ およびポリイミ
ドを基材とｉ−たＸ線マスクを透過したあとのＳ ＯＲ
スペクトルを示したもので、大略％ ４０人より長波長
のＳ Ｏｒ（は殆んで透過せず、したがって％Ｘ線感応
月別に照射さむるＸ線は３〜４０人の領域に限らｊる。<Example> Curve a in Figure 2 shows electron acceleration energy E = 1.00
eV, acceleration '[fiI = 100 mA, 1 kL] This shows the spectrum of SOR generated at the radius of curvature of the child orbit ρ = 1 m. The dotted line in the figure indicates the SOR after passing through an X-ray mask with a base material of 5iaN4.8102, BN, and polyimide, which can be used normally.
This shows the spectrum, and almost no S Or (with wavelengths longer than approximately 40 people) is transmitted, so the X-rays irradiated by X-ray sensitivity are limited to the range of 3 to 40 people.
また、同図中の破線Ｃは本発明に係るシャッタの月別と
して溶融石英を用いた場合の、該溶融石英透過後のＳＯ
Ｒスペクトルを示Ｉ−たものである。波長λが３００Ｏ
Ａ以上の８０ Ｉｔはほぼ１００％透過し、逆にＸ線リ
ングラフィに寄与する３〜４０人のＸ線は殆んど透過し
ないことが判る。In addition, the broken line C in the figure shows the SO after passing through the fused quartz when fused quartz is used as the monthly shutter of the present invention.
This shows the R spectrum. Wavelength λ is 300O
It can be seen that almost 100% of 80 It of A or higher is transmitted, and on the contrary, almost no X-rays of 3 to 40 people contributing to X-ray phosphorography are transmitted.
この溶融石英シャッタ透過後のＳＯＲの総光量は１０ｆ
ｆｌＷ以上でおり％Ｘ線マスクおよび被露光基板上のア
ライメントマークを検出が十分、可能な値である。本実
施例ではシャッタの材料溶融石英を使用したが、これ以
上にも、紫外〜可視領域の光に対する透過率が高く、軟
Ｘ線領域を遮蔽し得る他の材料を使用できることはいう
までもない。The total amount of SOR light after passing through this fused silica shutter is 10 f.
flW or more, which is a value that is sufficient to detect the alignment marks on the X-ray mask and the substrate to be exposed. In this example, fused silica was used as the material for the shutter, but it goes without saying that other materials that have high transmittance for light in the ultraviolet to visible range and can shield soft X-rays can also be used. .
本発明によればＳＯＲ中の真空紫外から可視光領域の光
がアライメントマーク検出用として使用できるため、従
来、別に必要であった光源およびこの光をアライメント
マーク部に照射するだめの光学系が不要となり、露光装
置としての構造が簡略化でき％また、光源からの熱発生
によるアライメント精度低下も除去できる。According to the present invention, light in the vacuum ultraviolet to visible light range during SOR can be used for alignment mark detection, so there is no need for a separate light source and an optical system for irradiating this light onto the alignment mark, which were previously required. As a result, the structure of the exposure apparatus can be simplified, and deterioration in alignment accuracy due to heat generation from the light source can also be eliminated.
第１図は８０Ｒ，を用いたときのＸ線露光装置の概略図
、第２図はＳＯＲスペクトルの特性線図である。FIG. 1 is a schematic diagram of an X-ray exposure apparatus using 80R, and FIG. 2 is a characteristic diagram of an SOR spectrum.
Claims (1)
パターンを該Ｘ線マスク後方に位置する放射線感応材料
に転写するＸ線リングラフィに於て、該Ｘ線マスク前方
、シンクロトロン軌道放射光光源側に可視光と軟Ｘ線に
対し透過性が低く、且つ紫外〜可視領域にある光に対し
て高透過性の材料から成り前記シンクロトロン軌道放射
光の光路内に脱入可能なシャッタと、該シャッタと前記
Ｘ線マスクの間に位置し、該シャッタを透過した前記波
長領域の光により前記Ｘ線マスクおよび放射線感応材料
を塗布した基板上のマークを検出する光学系を設けたこ
とを特徴とするＸ線露光装置。1. In X-ray phosphorography, in which synchrotron orbital synchrotron radiation is used to transfer a pattern on an X-ray mask to a radiation-sensitive material located behind the X-ray mask, in front of the X-ray mask, on the side of the synchrotron orbital synchrotron radiation light source. a shutter made of a material that has low transparency to visible light and soft X-rays and high transparency to light in the ultraviolet to visible range, and is removable into the optical path of the synchrotron orbital radiation; An optical system is provided between the shutter and the X-ray mask, and detects marks on the X-ray mask and the substrate coated with a radiation-sensitive material using light in the wavelength range transmitted through the shutter. X-ray exposure equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58163223A JPS6055624A (en) | 1983-09-07 | 1983-09-07 | Device for exposing to x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58163223A JPS6055624A (en) | 1983-09-07 | 1983-09-07 | Device for exposing to x-ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6055624A true JPS6055624A (en) | 1985-03-30 |
Family
ID=15769653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58163223A Pending JPS6055624A (en) | 1983-09-07 | 1983-09-07 | Device for exposing to x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6055624A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01101630A (en) * | 1987-10-14 | 1989-04-19 | Sumitomo Heavy Ind Ltd | Position detection device in x-ray aligner |
| JPH01109721A (en) * | 1987-10-22 | 1989-04-26 | Sumitomo Heavy Ind Ltd | Position sensor in x-ray exposure device |
| US5168512A (en) * | 1990-03-13 | 1992-12-01 | Canon Kabushiki Kaisha | Method of manufacture of semiconductor devices |
| US5276725A (en) * | 1988-05-10 | 1994-01-04 | Canon Kabushiki Kaisha | Exposure system |
| US5317615A (en) * | 1990-03-02 | 1994-05-31 | Canon Kabushiki Kaisha | Exposure apparatus |
| US5524131A (en) * | 1988-10-06 | 1996-06-04 | Canon Kabushiki Kaisha | Alignment apparatus and SOR x-ray exposure apparatus having same |
-
1983
- 1983-09-07 JP JP58163223A patent/JPS6055624A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01101630A (en) * | 1987-10-14 | 1989-04-19 | Sumitomo Heavy Ind Ltd | Position detection device in x-ray aligner |
| JPH01109721A (en) * | 1987-10-22 | 1989-04-26 | Sumitomo Heavy Ind Ltd | Position sensor in x-ray exposure device |
| US5276725A (en) * | 1988-05-10 | 1994-01-04 | Canon Kabushiki Kaisha | Exposure system |
| US5524131A (en) * | 1988-10-06 | 1996-06-04 | Canon Kabushiki Kaisha | Alignment apparatus and SOR x-ray exposure apparatus having same |
| US5822389A (en) * | 1988-10-06 | 1998-10-13 | Canon Kabushiki Kaisha | Alignment apparatus and SOR X-ray exposure apparatus having same |
| US5317615A (en) * | 1990-03-02 | 1994-05-31 | Canon Kabushiki Kaisha | Exposure apparatus |
| US5168512A (en) * | 1990-03-13 | 1992-12-01 | Canon Kabushiki Kaisha | Method of manufacture of semiconductor devices |
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