JPS6054996A - Synthesis of diamond - Google Patents
Synthesis of diamondInfo
- Publication number
- JPS6054996A JPS6054996A JP58164766A JP16476683A JPS6054996A JP S6054996 A JPS6054996 A JP S6054996A JP 58164766 A JP58164766 A JP 58164766A JP 16476683 A JP16476683 A JP 16476683A JP S6054996 A JPS6054996 A JP S6054996A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- microwave
- gas
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
Description
【発明の詳細な説明】
ｚ′
本発明は化学気相析出法によるダイヤモンドの合成法に
関する。DETAILED DESCRIPTION OF THE INVENTION z' The present invention relates to a method for synthesizing diamond by chemical vapor deposition.
従来、常圧以下の低圧領域におけるダイヤモンドの合成
法としては、次のような方法が知られている。Conventionally, the following methods are known as methods for synthesizing diamond in a low pressure region below normal pressure.
１）、減圧下で炭化水素を加熱した基板表面に通じ、そ
の熱エネルギーで熱分解して遊離炭素を生成速、さらに
集束して基板表面に衝突させてダイヤモンドを析出させ
るイオンビーム法。1) An ion beam method in which hydrocarbons are heated under reduced pressure to the substrate surface, and the thermal energy is used to thermally decompose them to generate free carbon, which is then focused and collided with the substrate surface to precipitate diamonds.
５）、水素ガスと炭化水素ガスとの混合ガスに、３０Ｍ
Ｈｚ以下、例えば１３．５ＭＨｚの高周波を導通して高
周波プラズマを発生せしめ、プラズマの高エネルギーの
荷電粒＋Ｋよって炭化水素の化学結合を解き放すと同時
に励起状態の炭素原子または励起状態の炭化水素を生成
せしめ、基板衣Ｑ Ｘ
゛−′−相析出法。5), 30M to the mixed gas of hydrogen gas and hydrocarbon gas
A high frequency plasma is generated by conducting a high frequency of Hz or less, for example 13.5 MHz, and the high energy charged particles +K of the plasma release the chemical bonds of hydrocarbons and at the same time generate excited state carbon atoms or excited state hydrocarbons. Seshime, substrate coating QX ゛-'-phase precipitation method.
４）、黒鉛、基板及び水素を封管中に黒鉛を高温部に、
基板を低温部に設置して封入し、水素ガスを熱的あるい
は放電によって原子状水素を生成せしめ、不均化反応を
利用して基板表面にダイヤモンドを析出させる化学輸送
法。4) Graphite, substrate, and hydrogen are placed in a sealed tube, and the graphite is placed in the high temperature section.
A chemical transport method in which the substrate is placed in a low-temperature area and sealed, hydrogen gas is thermally or electrically discharged to generate atomic hydrogen, and diamond is deposited on the substrate surface using a disproportionation reaction.
などがある。and so on.
たダイヤモンドを合成するためには、析出の操作と酸素
または水素ガスを導入して基板表面に析出した黒鉛状炭
素を除去する操作とを、屑期的に繰返し行うことが必要
である。従って析出速度が遅く、また基板がダイヤモン
ドに限定される欠点がある。In order to synthesize diamond, it is necessary to repeatedly perform the precipitation operation and the operation of introducing oxygen or hydrogen gas to remove graphitic carbon deposited on the substrate surface. Therefore, the deposition rate is slow and the substrate is limited to diamond.
前記２）のイオンビーム法は、常温で各種材料の基板表
面にダイヤそンドを析出させることができ！ｉ、’４７
利点はあるが、炭素の正イオンビームを発生させる装置
及びその集束装置Ｎが高価であり、また放電持続に用い
るアルゴンガス等の不活性ガスの原子がダイヤモンド格
子中に混入するなどの欠点がある。The ion beam method described in 2) above can deposit diamonds on the surface of substrates made of various materials at room temperature! i, '47
Although there are advantages, the device for generating a carbon positive ion beam and its focusing device N are expensive, and there are also disadvantages such as atoms of inert gas such as argon gas used to sustain the discharge mixed into the diamond lattice. .
前記５）の高周波プラズマ化学気相析出法は、プラズマ
を発生させるだめには、反応系の圧力が低い圧力の狭い
範囲であることが必要であり、圧力続操業を行うことが
できない欠点がある。The high-frequency plasma chemical vapor deposition method described in 5) above requires the pressure of the reaction system to be in a low pressure narrow range in order to generate plasma, and has the disadvantage that continuous pressure operation cannot be performed. .
本発明者らは、これらの従来法の欠点を改善すべく研究
の結果、さきに、（１）水素をマイクロ波無極放電中を
通過させた後炭化水素を混合した混合ガス、または水素
と炭化水素との混合ガスをマイクロ波無極放電中を通過
させた混合ガスを、３００〜１３００℃に加熱した基板
上１で導き、炭化水素の分解によりダイヤモンドを基板
上に析出させる方’−，，”ｊｌ’￥）（特願昭５６−
２０４３２１号）を見出した。As a result of research to improve the shortcomings of these conventional methods, the present inventors have previously found that (1) a mixed gas in which hydrogen is passed through a microwave non-polar discharge and then mixed with hydrocarbons, or a mixture of hydrogen and hydrocarbons; A method in which a mixed gas with hydrogen is passed through a microwave polarless discharge and guided over a substrate heated to 300 to 1300°C, and diamond is deposited on the substrate by decomposition of hydrocarbons. jl'￥) (Special application 1982-
204321).
しかし、この方法によると、合成したダイヤモンド中に
、乱れた構造を有する炭素あるいは水ご素？
本発明の目的は前記問題点を解消せんとするものである
。However, according to this method, the synthesized diamond contains carbon or hydrogen with a disordered structure. An object of the present invention is to solve the above-mentioned problems.
本発明者らは、この問題点を克服すべく更に研の発振機
ではプラズマを維持し、且つ基板温度をダイヤモンド合
成温度（３００〜１３００℃）に適し九温度に保つ出力
のマイクロ波を発振させプラズマを発生させて導波管で
基板忙導くようにすると、高品質のダイヤモンドが基板
上に析出し得られることを究明し得た。この知見に基い
て本発明を完成した。In order to overcome this problem, the present inventors further developed an oscillator that maintains the plasma and oscillates microwaves with an output that maintains the substrate temperature at a temperature suitable for the diamond synthesis temperature (300 to 1300°C). It has been found that high-quality diamond can be deposited on a substrate by generating plasma and guiding it through a waveguide. The present invention was completed based on this knowledge.
本発明の要旨は、
（５）
電を用いて基板上にダイヤモンドを析出させる方法にお
いて、２個のマイクル波導入用導波管を用い、一方の導
波管でガスの励起、解離を効率よく行う高出力のマイク
ロ波を導入してプラズマを発生させ、他方の導波管でプ
ラズマを維持し、基板温度をダイヤモンド合成に適した
３００〜１３００℃の温度に保つ出力のマイクロ波を発
振させ導波管させるために用いる出力は大きい程よいが
、２００Ｗ〜５ｋＷ、好ましくは５００ Ｗ〜２ ｋＷ
で、ガスに３００ＭＨｚ〜１０００ＧＨｚのマイクロ波
を導入してプラズマを発生させる。The gist of the present invention is as follows: (5) In a method of depositing diamond on a substrate using electricity, two waveguides for introducing microwave waves are used, and one waveguide efficiently excite and dissociate gas. A high-power microwave is introduced to generate plasma, and the plasma is maintained in the other waveguide, and the output microwave is oscillated and guided to maintain the substrate temperature at a temperature of 300 to 1300 degrees Celsius, which is suitable for diamond synthesis. The output used for making the wave tube is higher, the better, but 200 W to 5 kW, preferably 500 W to 2 kW.
Then, microwaves of 300 MHz to 1000 GHz are introduced into the gas to generate plasma.
また、基板をダイヤモンド合成に適する３００〜１３０
０℃に保持させるための出力は１００ Ｗ〜１．５ｋＷ
、好ましくは１００Ｗ〜１ｋＷで、３００ＭＨｚ〜１
０００ＧＨｚのマイクロ波を導入する。In addition, the substrate is 300 to 130, which is suitable for diamond synthesis.
The output to maintain the temperature at 0℃ is 100 W to 1.5 kW.
, preferably 100W to 1kW, 300MHz to 1
000 GHz microwave will be introduced.
（６）
シ、水素と炭化水素ガスの励起・解離は高まり、かつダ
イヤモンドの化学結合を生せしめる十分な反応エネルギ
ーを持った炭素原子となる。下部のマイ（クロ波導波管
から導かれたマイクロ波プラズマまた、マイクロ波プラ
ズマ中で発生した励起状態または原子状態の水素は、黒
鉛及び黒鉛状炭素を成長させる原因となるＳｐ 、 Ｓ
ｐ結合を持つ炭素原子と反応して炭化水素を生成すると
同時に基板表面からこれらを離脱し、基板面の清浄化の
作用を行う。前記２つの作用が相俟って、ダイヤモンド
中に不純物及び乱れた構造の炭素が混入することが防止
し得られ、高品質のダイヤモンドを析出持合の材質を誘
電率及び誘電正接の値によって選択する。例えば、アル
ミナの代りに六方晶窒化はう素を用いることで５０℃か
ら２００℃の低い温度が得られる。または基板支持金の
周りに、マイクロ波の吸収剤例えば、黒鉛、ステンレス
を置いだ漫、あるいは支持台を１＃接冷媒で冷却するよ
うにすることＫよって、より正確に調整し得られる。(6) The excitation and dissociation of hydrogen and hydrocarbon gas increases, and carbon atoms become carbon atoms with sufficient reaction energy to form chemical bonds in diamond. Microwave plasma guided from the microwave waveguide at the bottom Also, the excited or atomic state hydrogen generated in the microwave plasma is responsible for the growth of graphite and graphitic carbon.Sp,S
It reacts with carbon atoms having p-bonds to generate hydrocarbons and at the same time separates them from the substrate surface, thereby cleaning the substrate surface. The above two effects work together to prevent impurities and carbon with a disordered structure from entering the diamond, and to select a material that can precipitate high-quality diamond based on its dielectric constant and dielectric loss tangent. do. For example, by using hexagonal boron nitride instead of alumina, temperatures as low as 50°C to 200°C can be obtained. Alternatively, more accurate adjustment can be achieved by placing a microwave absorber such as graphite or stainless steel around the substrate support, or by cooling the support with a 1# coolant.
本発明において使用する炭化水素と１２では、マイ１ク
ロ波プラズマ中で励起・解離する炭化水素で・あ、れば
よい。例えば、メタン、エタン、プロパン。The hydrocarbon 12 used in the present invention may be any hydrocarbon that is excited and dissociated in microwave plasma. For example, methane, ethane, propane.
・１（；・
几工）チレン、アセチ１／ン、ベンゼン等の飽和、不飽
和の脂肪族炭化水素及び芳香族炭化水素が挙げられる。・Saturated and unsaturated aliphatic hydrocarbons and aromatic hydrocarbons such as 1(;・ 几工) tyrene, acetylene, and benzene are mentioned.
炭化水素（Ａ）と水素ガス（Ｂ）の容量割合は、％＝１
０００〜０．００１の広い範囲で使用し得られる。The volume ratio of hydrocarbon (A) and hydrogen gas (B) is %=1
It can be used in a wide range of 0.000 to 0.001.
しかし、黒鉛状炭素の析出を防止するという観点から、
その」二限は１０以下であることが奸才しい。However, from the viewpoint of preventing the precipitation of graphitic carbon,
It is clever that the second limit is 10 or less.
基板の湿度は３００〜１３００℃の範囲であることが必
要である。３００℃より低いと、析出したダイヤ−Ｍ、
：％ノド中に水素が混入する恐れがあシ、１３００１１
：：を超えると析出したダイヤモンドが黒鉛に逆転移す
る欠点が生ずる。最も好ましい範囲は５００〜１２００
℃である。マイクロ波は前記した通りの３００ ＭＨｚ
〜１０００ ＧＨｚの範囲で、マイクロ波出力範囲は
前記した通りの範囲であることが好ましい。The humidity of the substrate needs to be in the range of 300 to 1300°C. When the temperature is lower than 300°C, the precipitated diamond M,
:% There is a risk of hydrogen getting mixed into the throat, 130011
If it exceeds ::, there will be a drawback that the precipitated diamond will reversely transform into graphite. The most preferred range is 500-1200
It is ℃. The microwave is 300 MHz as mentioned above.
~1000 GHz, and the microwave output range is preferably as described above.
マイクロ波プラズマを発生させる管内の圧力は、プラズ
マを安定に維持するために、０．０５〜４００Ｔｏｒｒ
であることが好ましい。まだダイヤモンド■“−一
１．’：Ｉ板全面に均一に析出させる１基板の支持合成
に本発明の方法を実施する装置の態様を第１図に基いて
説明する。第１図はその態様を示す概要図である。図中
、１はガス供給装置で、１０゜１１はそれぞれ、炭化水
素ガス及び水素ガスの供給管に設けたパルプで、１２は
混合ガスの供給管に設けたパルプである。３及び５はマ
イクロ波発振機で、マイクロ波はそれぞれ導波管４及び
６を通り、反応室７内に導かれる。８は基板、９は支（
９）
”、、、？、２は排気装置、１３は排気バルブ、１４は
マイクロ波吸収剤である。The pressure inside the tube that generates microwave plasma is 0.05 to 400 Torr in order to maintain stable plasma.
It is preferable that An embodiment of the apparatus for carrying out the method of the present invention for supporting synthesis of one substrate in which diamond is deposited uniformly over the entire surface of the I plate will be explained based on FIG. 1. FIG. 1 shows the embodiment. In the figure, 1 is a gas supply device, 10° and 11 are pulps provided in the hydrocarbon gas and hydrogen gas supply pipes, respectively, and 12 is pulp provided in the mixed gas supply pipe. 3 and 5 are microwave oscillators, and the microwaves pass through waveguides 4 and 6, respectively, and are guided into the reaction chamber 7. 8 is a substrate, and 9 is a support (
9) ”,,,?, 2 is an exhaust device, 13 is an exhaust valve, and 14 is a microwave absorber.
反応室７内の支持台９上に基板８を設Ｗｔ−た後、排気
装置２を作動ｌ〜て反応室７内を減圧にすると共に１バ
ルブ１０ 、１１ 、１２及び１３を調整して水素ガス
、炭化水素の流量ならびに反応室内の圧力を所定の値に
保持する。次にマイクロ波発振機３及び５を所定の出力
で起動させ、導波管４及び６を通じて反応室７内にプラ
ズマを発生させる叉共に基板８の加熱を行う。基板８の
温度はマイ実施例１゜
第１図に示す装置を用い、基板８としてシリコンウェハ
ーを、ガスとしてメタン及び水素を使用した。シリコン
ウェハーを支持台９」二に設置ｔ ｔ、、排気装置２を
作動して反応室７を減圧にした。次いでガス供給袋ｆｔ
ｆｌより水素とメタンをそれぞれ毎分子ｏｃｃ、１ｃｃ
の流量で供給し、バルブ１３を調整して反応室７内の圧
力を４０ Ｔｏｒｒ Ｋｆｌｌｌｉ整しＣ１０）
、：た；。次いでマイクロ波発振機５の周波数２．４５
ＧＨｚ、８００Ｗの出力で無極放電を発生させ、導波管
６により反応室内に導きガスを励起させると共に、マイ
クロ波発振機３０周波数２．４５ＧＨｚ。After setting the substrate 8 on the support stand 9 in the reaction chamber 7, the exhaust device 2 is activated to reduce the pressure in the reaction chamber 7, and the first valves 10, 11, 12 and 13 are adjusted to release hydrogen. The gas and hydrocarbon flow rates as well as the pressure in the reaction chamber are maintained at predetermined values. Next, the microwave oscillators 3 and 5 are activated with predetermined outputs to generate plasma in the reaction chamber 7 through the waveguides 4 and 6 and to heat the substrate 8 at the same time. The temperature of the substrate 8 was as follows: My Example 1 The apparatus shown in FIG. 1 was used, a silicon wafer was used as the substrate 8, and methane and hydrogen were used as the gases. The silicon wafer was placed on a support stand 9'', and the exhaust device 2 was activated to reduce the pressure in the reaction chamber 7. Then gas supply bag ft
Each molecule of hydrogen and methane is occ and 1cc from fl, respectively.
The pressure inside the reaction chamber 7 was adjusted to 40 Torr by adjusting the valve 13. Next, the frequency of the microwave oscillator 5 is 2.45.
A non-polar discharge was generated with an output of 800 W at GHz, and the waveguide 6 guided the gas into the reaction chamber to excite the gas, and the microwave oscillator 30 had a frequency of 2.45 GHz.
４００Ｗの出力で無極放電を発生させ、導波管４によシ
反応室内に導き、基板８を９００℃に加熱した。A non-polar discharge was generated with an output of 400 W, guided into the reaction chamber through the waveguide 4, and the substrate 8 was heated to 900°C.
３時間析出させたところ約１０μｍのダイヤモンド粒子
が基板８土に析出した。ダイヤモンド粒子ンド粉末でき
ずをつけたシリコンウェハーを、ガスとしてメタン及び
水素を使用し、水素及びメタンをそれぞれ毎分８０ ｃ
ｃｓ Ｏ，２４ｃｃの流量で供給し、反応室７内の圧力
を３０ Ｔｏｒｒにした。マイクロ波発振機５は周波数
２．４５ ＧＨｚ、 １ ｋＷの出力、マイクロ波発振
機３は周波数２．４５ＧＨｚ。After 3 hours of precipitation, diamond particles of about 10 μm were deposited on the substrate 8 soil. A silicon wafer impregnated with diamond particles and powder was heated at 80 c/min using methane and hydrogen as gases, respectively.
csO was supplied at a flow rate of 24 cc, and the pressure inside the reaction chamber 7 was set at 30 Torr. The microwave oscillator 5 has a frequency of 2.45 GHz and an output of 1 kW, and the microwave oscillator 3 has a frequency of 2.45 GHz.
５００ Ｗの出力で行い、支持台中に水を通して基板の
温度を９３０℃とした。５０時間析出させたとこに析出
した。膜状ダイヤモンド中には乱れた構造の炭素あるい
は水素と結合ｌ−だ炭素が光学的に観察されなかった。The temperature of the substrate was set at 930° C. by passing water into the support stage. Precipitation occurred after 50 hours of precipitation. No disordered carbon structure or l-carbon bonded to hydrogen was optically observed in the diamond film.
本発明の方法によると、２個のマイクロ波導入用導波管
を用い、一方の導波管でガスの励起解離に適したマイク
ロ波を導入してプラズマを発生させ、他方の導波管でプ
ラズマを維持し、かつ基板温１度をダイヤモンド合成に
適した湿度に保持するま
た；め、極めて適正にダイヤモンド合成に適する条智
る。According to the method of the present invention, two waveguides for introducing microwaves are used, one waveguide introduces microwaves suitable for excitation dissociation of gas to generate plasma, and the other waveguide generates plasma. In order to maintain the plasma and maintain the substrate temperature at 1 degree Celsius and the humidity suitable for diamond synthesis, the process is extremely suitable for diamond synthesis.
第１図は本発明の方法を実施する装置の概要図である。
１：ガス供給装置、２：排気装置、
３．５：マイクロ発振機、４．．６：導波管、７；反応
室、 ８：基板、
９：支持台、
す１１や・１１・１２・１３ ： ′Ｏｐ ７’・１４
：マイクロ波吸収剤。
（１３）
第 １ 図FIG. 1 is a schematic diagram of an apparatus for carrying out the method of the invention. 1: Gas supply device, 2: Exhaust device, 3.5: Micro oscillator, 4. ．． 6: Waveguide, 7: Reaction chamber, 8: Substrate, 9: Support stand, 11, 11, 12, 13: 'Op 7', 14
:Microwave absorber. (13) Figure 1
Claims (1)
用いて基板上にダイヤモンドを析出させる方法において
、２個のマイクロ波導入用導波管を用い、一方の導波管
でガスの励起、解離を効率よく行う高出力のマイクロ波
を導入してプラズマを発生させ、他方の導波管でプラズ
マを維持し、基板温度をダイヤモンド合成に適した３０
０〜１３００℃の温度に保つ出力のマイクロ波を発振さ
せ導波管で導入してプラズマを発生させて、基板上にダ
イヤモンドを析出させるようにしたことを特徴とするダ
イヤモンドの合成法。 ２ 基板の周囲に冷却材またはマイクロ波吸収材を配置
して基板温度を制御するようにした特許請求の範囲第１
項記載のダイヤモンドの合成法。 （１）[Claims] 1. In a method for depositing diamond on a substrate using microwave non-polar discharge of a mixed gas of hydrogen and hydrocarbon, two waveguides for introducing microwaves are used, and one of the waveguides is Plasma is generated by introducing high-power microwaves that efficiently excite and dissociate the gas, and the plasma is maintained in the other waveguide to maintain the substrate temperature at 30°C, which is suitable for diamond synthesis.
A method for synthesizing diamond, characterized in that microwaves are oscillated with an output that is maintained at a temperature of 0 to 1300°C and introduced through a waveguide to generate plasma and deposit diamond on a substrate. 2. Claim 1 in which the temperature of the substrate is controlled by disposing a cooling material or a microwave absorbing material around the substrate.
Synthesis method of diamond as described in section. (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58164766A JPS6054996A (en) | 1983-09-07 | 1983-09-07 | Synthesis of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58164766A JPS6054996A (en) | 1983-09-07 | 1983-09-07 | Synthesis of diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6054996A true JPS6054996A (en) | 1985-03-29 |
| JPS62120B2 JPS62120B2 (en) | 1987-01-06 |
Family
ID=15799517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58164766A Granted JPS6054996A (en) | 1983-09-07 | 1983-09-07 | Synthesis of diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054996A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62198277U (en) * | 1986-06-09 | 1987-12-17 | ||
| US4940015A (en) * | 1988-07-30 | 1990-07-10 | Kabushiki Kaisha Kobe Seiko Sho | Plasma reactor for diamond synthesis |
| US4984534A (en) * | 1987-04-22 | 1991-01-15 | Idemitsu Petrochemical Co., Ltd. | Method for synthesis of diamond |
| WO1992005867A1 (en) * | 1990-10-01 | 1992-04-16 | Idemitsu Petrochemical Company Limited | Device for generating microwave plasma and method of making diamond film utilizing said device |
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| EP0839928A1 (en) * | 1996-10-30 | 1998-05-06 | Schott Glaswerke | Remote plasma CVD method |
| KR100459531B1 (en) * | 2001-12-27 | 2004-12-04 | 박수길 | Manufacturing Method of Large crystalline Diamond Electrode by Microwave Plasma CVD |
-
1983
- 1983-09-07 JP JP58164766A patent/JPS6054996A/en active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62198277U (en) * | 1986-06-09 | 1987-12-17 | ||
| JPH043007Y2 (en) * | 1986-06-09 | 1992-01-31 | ||
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| US4984534A (en) * | 1987-04-22 | 1991-01-15 | Idemitsu Petrochemical Co., Ltd. | Method for synthesis of diamond |
| US4940015A (en) * | 1988-07-30 | 1990-07-10 | Kabushiki Kaisha Kobe Seiko Sho | Plasma reactor for diamond synthesis |
| WO1992005867A1 (en) * | 1990-10-01 | 1992-04-16 | Idemitsu Petrochemical Company Limited | Device for generating microwave plasma and method of making diamond film utilizing said device |
| EP0839928A1 (en) * | 1996-10-30 | 1998-05-06 | Schott Glaswerke | Remote plasma CVD method |
| US5985378A (en) * | 1996-10-30 | 1999-11-16 | Schott Glaswerke | Remote-plasma-CVD method for coating or for treating large-surface substrates and apparatus for performing same |
| KR100459531B1 (en) * | 2001-12-27 | 2004-12-04 | 박수길 | Manufacturing Method of Large crystalline Diamond Electrode by Microwave Plasma CVD |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62120B2 (en) | 1987-01-06 |
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