JPS6054171U - liquid crystal display device - Google Patents
liquid crystal display deviceInfo
- Publication number
- JPS6054171U JPS6054171U JP14611183U JP14611183U JPS6054171U JP S6054171 U JPS6054171 U JP S6054171U JP 14611183 U JP14611183 U JP 14611183U JP 14611183 U JP14611183 U JP 14611183U JP S6054171 U JPS6054171 U JP S6054171U
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display device
- crystal display
- source
- tpt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図イ9口は従来構造を示す上面図並びに断面図、第
2図イ9口は本考案装置の構造を示す上面図並びに断面
図であって、3はゲート電極、5はアモルファスシリコ
ン層、6,7はソース、ドレイン電極、を夫々示してい
る。Figure 1A9 shows a top view and a cross-sectional view of a conventional structure, FIG. , 6 and 7 indicate source and drain electrodes, respectively.
Claims (1)
スシリコン層、並びにソース、ドレイン電極を順次積層
してTPTを形成すると共に、そのTPTのソース、ド
レイン電極の何れか一方に透明表示電極を接続して構成
した液晶ストリツクス表示装置に於て、上記ソース、ド
レイン各電極をその間隔を略一定として互に折曲形成し
て成る液晶表示装置。A TPT is formed by sequentially laminating a gate electrode, an insulating film, an amorphous silicon layer, and source and drain electrodes on a transparent glass substrate, and a transparent display electrode is connected to either the source or drain electrode of the TPT. A liquid crystal display device constructed by bending the source and drain electrodes with substantially constant intervals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14611183U JPS6054171U (en) | 1983-09-20 | 1983-09-20 | liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14611183U JPS6054171U (en) | 1983-09-20 | 1983-09-20 | liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6054171U true JPS6054171U (en) | 1985-04-16 |
JPH0314652Y2 JPH0314652Y2 (en) | 1991-04-02 |
Family
ID=30325328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14611183U Granted JPS6054171U (en) | 1983-09-20 | 1983-09-20 | liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054171U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60233858A (en) * | 1984-05-04 | 1985-11-20 | Nec Corp | Thin film transistor |
JPH0225038A (en) * | 1988-07-13 | 1990-01-26 | Seikosha Co Ltd | Silicon thin film transistor array and its manufacture |
JP2011233882A (en) * | 2010-04-07 | 2011-11-17 | Semiconductor Energy Lab Co Ltd | Transistor |
-
1983
- 1983-09-20 JP JP14611183U patent/JPS6054171U/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60233858A (en) * | 1984-05-04 | 1985-11-20 | Nec Corp | Thin film transistor |
JPH0225038A (en) * | 1988-07-13 | 1990-01-26 | Seikosha Co Ltd | Silicon thin film transistor array and its manufacture |
JP2011233882A (en) * | 2010-04-07 | 2011-11-17 | Semiconductor Energy Lab Co Ltd | Transistor |
US9401407B2 (en) | 2010-04-07 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
Also Published As
Publication number | Publication date |
---|---|
JPH0314652Y2 (en) | 1991-04-02 |
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