JPS6043016B2 - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6043016B2 JPS6043016B2 JP54110349A JP11034979A JPS6043016B2 JP S6043016 B2 JPS6043016 B2 JP S6043016B2 JP 54110349 A JP54110349 A JP 54110349A JP 11034979 A JP11034979 A JP 11034979A JP S6043016 B2 JPS6043016 B2 JP S6043016B2
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical
- envelope
- cylindrical body
- contact
- peripheral surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】
この発明は半導体装置にか）り、特に大電力用の整流
素子、同トランジスタ等の耐力向上を目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices, and particularly aims to improve the durability of high-power rectifying elements, transistors, and the like.
一般に大電力用整流素子や大電力用トランジスタ等の
半導体装置は種々の原因により過剰電流が流れることが
ある。In general, excessive current may flow in semiconductor devices such as high-power rectifying elements and high-power transistors due to various causes.
上記は一例として逆方向耐圧が劣化した場合などであり
、過剰電流は整流素子の一個所に集中して流れる。かゝ
る過剰電流を防止するために回路の一部にフェーズ等が
設けられているが、フェーズは作動してもその特性上過
剰電流の瞬時通電を許すことがある。次に半導体整流素
子を例示して側面図で示す第１図、および断面図で示す
第２図により説明する。図において１はセラミックスで
なる筒体、２、２’は前記筒体 〜の両端面に対向して
封着されコバール（商品名）でなる一対の環状蓋体、３
、３’は前記筒体と同軸かつ環状蓋体の開孔に挿通し封
着された一対の電極体で、前記筒体、環状蓋体および電
極体とで気密の外囲器が形成され、この内部に電極体の
対向面間に下部電極３とは鑞層５にて固着されて挾持さ
れた半導体素子構造体４と、過剰電流による半導体素子
構造体の溶解にをもなつてプラズマ状に飛散する溶融金
属による蓋体の破壊を防護するため遮蔽体６、６’が設
けられている。この遮蔽体はシリコンゴム、テフロン、
ダイフロン（商品名）等の耐熱性にすぐれた合成樹脂板
にて形成され、封止前に蓋体に密着させておくものであ
る。 上記従来の構造によれば、過剰電流（例えば数１
ＯＫＡ）が集中することにより半導体素子構造体が溶解
しプラズマ状に飛散する。そして遮蔽体６、６’によつ
て外囲器構造中最も弱い環状蓋体又は相当防護されるが
、絶縁性筒体１は飛散部に近接、対向しているため破損
する欠点がある。さらに外囲器の破損は爆発を伴うため
、回路配線においてこの半導体装置に隣接して設けられ
た他の部品まで破損するに至る。 この発明は従来の半
導体装置の欠点を改良するための構造を提供するものて
ある。The above example is a case where the reverse breakdown voltage has deteriorated, and the excess current flows in a concentrated manner at one location of the rectifying element. In order to prevent such excessive current, a phase or the like is provided in a part of the circuit, but even if the phase operates, due to its characteristics, it may allow instantaneous excessive current to flow. Next, a semiconductor rectifier will be explained with reference to FIG. 1, which is a side view showing an example, and FIG. 2, which is a cross-sectional view. In the figure, 1 is a cylindrical body made of ceramics, 2 and 2' are a pair of annular lids made of Kovar (trade name) and sealed opposite to both end surfaces of the cylindrical body, and 3
, 3' is a pair of electrode bodies that are coaxial with the cylindrical body and inserted into and sealed in the opening of the annular lid, and the cylindrical body, the annular lid, and the electrode body form an airtight envelope; Inside this, the lower electrode 3 is fixed and sandwiched between the opposing surfaces of the electrode body by the solder layer 5, and as the semiconductor element structure is melted by excessive current, a plasma is formed. Shields 6, 6' are provided to protect the lid from being destroyed by flying molten metal. This shield is made of silicone rubber, Teflon,
It is made of a synthetic resin plate with excellent heat resistance, such as Daiflon (trade name), and is tightly attached to the lid before sealing. According to the above conventional structure, excessive current (for example, the number 1
The concentration of OKA causes the semiconductor element structure to melt and scatter in the form of plasma. Although the shields 6 and 6' provide considerable protection against the annular lid, which is the weakest in the envelope structure, the insulating cylinder 1 has the disadvantage of being damaged because it is close to and facing the scattering part. Furthermore, since damage to the envelope accompanies an explosion, other components provided adjacent to the semiconductor device in the circuit wiring may also be damaged. The present invention provides a structure for improving the drawbacks of conventional semiconductor devices.
この発明にか）る半導体装置は絶縁性外囲器筒体と、こ
の筒体の両端面に対向して封着された一対の環状蓋体と
、筒体と同軸に環状蓋体の開孔に挿通して封着された一
対の電極体からなる気密の外囲器内に電極の対向面の間
に可滑動に挾持された半導体素子構造体と、軟質の絶縁
耐熱材で弾性を有する筒状になソー端に設けられたフラ
ンジ部の内周面を一方の電極体に外周面を外囲器筒体に
接触させて筒状部を電極体と外囲器筒体との間にこれら
とは離隔して定位するとともに筒状部の内周面の一部に
て半導体素子構造体に接してこれを定位させた筒状部材
とを備えたものである。The semiconductor device according to the present invention includes an insulating envelope cylindrical body, a pair of annular lids sealed oppositely to both end surfaces of the cylindrical body, and an opening in the annular lid coaxial with the cylindrical body. An airtight envelope consisting of a pair of electrode bodies inserted into and sealed together, a semiconductor element structure slidably sandwiched between opposing surfaces of the electrodes, and an elastic cylinder made of a soft insulating and heat-resistant material. The inner peripheral surface of the flange portion provided at the saw end is brought into contact with one of the electrode bodies, and the outer peripheral surface is brought into contact with the envelope cylindrical body, and the cylindrical part is placed between the electrode body and the envelope cylindrical body. and a cylindrical member that is oriented at a distance from the cylindrical part and that is in contact with the semiconductor element structure at a part of the inner circumferential surface of the cylindrical part.
この発明の半導体装置は一例の半導体整流素子において
、過剰電流による外囲器破損、飛散を防止する手段とし
て発明者らは第３図に断面図示した構造を案出した。図
について第２図に示された従来の構造との差を説明する
。この構造は半導体素子構造体１４が対向する電極体の
間に挾持されて鑞層５を欠き、下部遮蔽体に代わつて筒
状体１６が内装されてなる。この筒状体は一端部に内向
きフランジ１６ａを有し、その内周面で下部電極体３の
側面に接するとともに筒状体の外周面で外囲器筒体の内
周面に密接定位され、さらにこの筒状体の内周面の一部
に半導体素子構造体１４の外周面に接してこれを定位す
る。また筒状体は上部一遮蔽体６″とともに半導体ペレ
ットの過剰電流（スパーク）による破損の防護にあたる
。しかして破損防護のためには外囲器内空間を広くする
こと）、半導体素子構造体を定位するための構造として
第６図以降に示すものを案出した。In the semiconductor device of the present invention, which is an example of a semiconductor rectifying element, the inventors have devised a structure shown in cross section in FIG. 3 as a means for preventing damage to the envelope and scattering due to excessive current. The difference from the conventional structure shown in FIG. 2 will be explained with reference to the figure. In this structure, a semiconductor element structure 14 is sandwiched between opposing electrode bodies, the solder layer 5 is missing, and a cylindrical body 16 is installed in place of the lower shielding body. This cylindrical body has an inward flange 16a at one end, and its inner peripheral surface is in contact with the side surface of the lower electrode body 3, and the outer peripheral surface of the cylindrical body is closely positioned on the inner peripheral surface of the envelope cylinder. Further, a part of the inner circumferential surface of this cylindrical body is brought into contact with the outer circumferential surface of the semiconductor element structure 14 to orient it. In addition, the cylindrical body, together with the upper shield 6'', protects the semiconductor pellet from damage caused by excessive current (sparks).In order to prevent damage, the space inside the envelope must be widened). As a structure for localization, we devised the structure shown in Figures 6 onwards.
第６図に断面図、第７図に筒状部材を透視的に示す斜視
図によつて示す一実施例において１はセラミックスの絶
縁性外囲器筒体、２，２″は筒体の両端面に対向して封
着された一対の環状蓋体、３，３″は各環状蓋体の開孔
に挿通封着された一！対の電極体、そして外囲器筒体、
環状蓋体、電極体とで外囲器を形成し、この内部で電極
体の対向面の間に半導体素子構造体１４を挾持する。さ
らに外囲器内に筒状部材２６が装入され、その構造はシ
リコンゴム、テフロン、ダイフロン（商品（名）の如き
電気絶縁性と耐熱性とを備え軟質にして弾性を有する合
成樹脂にてなる筒状部２６ａと、この一端に設けられた
フランジ部２６ｂ（内向きフランジ部を含む）とからな
り、フランジ部の内周面（内向きフランジ部端）を（下
部）電極体３に接し、その外周面（外向きフランジ部端
）を外囲器筒体１の内周面に接してフランジ部を定位す
ることにより筒状部２６ａを電極体と外囲器筒体との間
にこれらとは離隔して定位するとともに筒状部の内周面
の一部て半導体素子構造体１４の外周面に接してこれを
定位させたことを特徴とする。次に第８図に断面図、第
９図に筒状部材を透視”的に示す斜視図によつて示され
る一実施例は筒状部材３６が上に述べた実施例に対し、
その筒状部３６ａの外周に軸方向の突堤３６ｂ，３６ｂ
・・・が設けられ、その堤頂が外囲器筒体１の内周面に
接する如くなる。In one embodiment shown in FIG. 6 as a sectional view and FIG. 7 as a perspective view of the cylindrical member, 1 is a ceramic insulating envelope cylindrical body, and 2 and 2'' are both ends of the cylindrical body. A pair of annular lids 3, 3'' are sealed facing each other and are inserted into the openings of each annular lid and sealed. a pair of electrode bodies, and an envelope cylinder;
The annular lid body and the electrode body form an envelope, and the semiconductor element structure 14 is sandwiched between opposing surfaces of the electrode body inside the envelope. Furthermore, a cylindrical member 26 is inserted into the envelope, and its structure is made of a soft and elastic synthetic resin with electrical insulation and heat resistance, such as silicone rubber, Teflon, and Diflon (product name). It consists of a cylindrical part 26a and a flange part 26b (including an inward flange part) provided at one end of the flange part 26b, with the inner peripheral surface of the flange part (inward flange part end) in contact with the (lower part) electrode body 3. By positioning the flange portion with its outer peripheral surface (outward flange end) in contact with the inner peripheral surface of the envelope cylinder 1, the cylindrical portion 26a is inserted between the electrode body and the envelope cylinder. It is characterized in that it is oriented separately from the cylindrical part, and a part of the inner circumferential surface of the cylindrical part is oriented in contact with the outer circumferential surface of the semiconductor element structure 14.Next, FIG. One embodiment shown in FIG. 9, which is a perspective view showing the tubular member 36, shows that the tubular member 36 is different from the embodiment described above.
Axial jetties 36b, 36b are formed on the outer periphery of the cylindrical portion 36a.
... are provided, and the top of the embankment comes into contact with the inner circumferential surface of the envelope cylinder 1.
この発明によれば圧接型の半導体装置において半導体素
子構造体が弾性の筒状部材にて充分に定位されるととも
に、筒状部材が軟質にて絶縁性が良好なるため過剰電流
（アーク）の発生に対する破損耐力が顕著に向上する。According to this invention, in a press-contact type semiconductor device, the semiconductor element structure is sufficiently localized by the elastic cylindrical member, and the cylindrical member is soft and has good insulation, so that excessive current (arc) is generated. The breakage resistance is significantly improved.
また、特に後者について外囲器内の容積が大となるため
、アーク発生時の内圧の上昇が大幅に抑制されることに
なる。さらに第２の実施例は半導体素子構造体の定位に
対し著効を有する。次にこの発明は実施にあたり半導体
装置部品、組立装置、製造工程等の変更が不要でも筒状
部材も廉価であるなど量産上の利点もある。Moreover, especially in the latter case, since the volume inside the envelope is large, the increase in internal pressure when arcing is generated is significantly suppressed. Furthermore, the second embodiment has a significant effect on the localization of the semiconductor element structure. Next, the present invention has advantages in terms of mass production, such as requiring no changes to semiconductor device parts, assembly equipment, manufacturing processes, etc., and the cylindrical member being inexpensive.
なお、この発明は上記実施例に限定されるものではなく
、サイリスタ、大電力用トランジスタ（キヤン封止）な
ど類似の構造体に広く適用できる。Note that the present invention is not limited to the above-mentioned embodiments, but can be widely applied to similar structures such as thyristors and high-power transistors (can-sealed).
第１図は半導体整流素子の側面図、第２図は従来の半導
体整流素子の断面図、第３図は半導体整流素子の断面図
、第４図は遮蔽体の斜視図、第５図は筒状体の斜視図、
第６図は一実施例の半導体整流素子の断面図、第７図は
筒状部材の斜視図、第８図は別の一実施例の半導体整流
素子の断面図、第９図は筒状部材の斜視図てある。
なお、図中同一符号は同一または相当部分を夫々示す。
１・・・・・・外囲器筒体、２，２″・・・・環状蓋体
、３，３″・・・・・・電極体、１４・・・・・・半導
体素子構造体、１６，２６，３６・・・・・・筒状体、
２６ａ，３６ａ・・・・・・筒状体の筒状部、２６ｂ・
・・・・・筒状体のフランジ部、３６ｂ，３６ｂ・・・
・・・筒状部の突堤。Figure 1 is a side view of a semiconductor rectifier, Figure 2 is a sectional view of a conventional semiconductor rectifier, Figure 3 is a sectional view of a semiconductor rectifier, Figure 4 is a perspective view of a shield, and Figure 5 is a tube. A perspective view of a body,
FIG. 6 is a sectional view of a semiconductor rectifier according to one embodiment, FIG. 7 is a perspective view of a cylindrical member, FIG. 8 is a sectional view of a semiconductor rectifier according to another embodiment, and FIG. 9 is a cylindrical member. A perspective view is shown. Note that the same reference numerals in the figures indicate the same or corresponding parts, respectively.
DESCRIPTION OF SYMBOLS 1... Envelope cylindrical body, 2, 2''... Annular lid body, 3, 3''... Electrode body, 14... Semiconductor element structure, 16, 26, 36... cylindrical body,
26a, 36a... Cylindrical part of the cylindrical body, 26b.
...Flange portion of the cylindrical body, 36b, 36b...
...The jetty of the cylindrical part.
Claims (1)
封着された一対の環状蓋体と、前記筒体と同軸に前記環
状蓋体の開孔に挿通して封着した一対の電極体からなる
気密の外囲器内にて電極体の対向面の間に可滑動に挾持
された半導体素子構造体と、軟質の絶縁耐熱材にて弾性
の筒状になり一端に設けられたフランジ部の内周面を一
方の電極体に外周面を外囲器筒体に接触させて筒状部を
電極体と外囲器筒体との間にこれらとは離隔して定位す
るとともに筒状部の内周面の一部にて半導体素子構造体
を接してこれを定位させた筒状部材とを備えた半導体装
置。1. An insulating envelope cylindrical body, a pair of annular lids that are sealed opposite to each other on both end surfaces of the cylindrical body, and a pair of annular lids that are inserted into an opening in the annular lid coaxially with the cylindrical body and sealed. In an airtight envelope consisting of a pair of electrode bodies, a semiconductor element structure is slidably sandwiched between opposing surfaces of the electrode bodies, and a flexible cylindrical structure made of a soft insulating and heat-resistant material is attached to one end. The inner peripheral surface of the provided flange portion is brought into contact with one electrode body and the outer peripheral surface is brought into contact with the envelope cylindrical body, and the cylindrical part is positioned between the electrode body and the envelope cylindrical body while being separated from them. and a cylindrical member having a part of the inner peripheral surface of the cylindrical portion in contact with a semiconductor element structure to orient the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54110349A JPS6043016B2 (en) | 1979-08-31 | 1979-08-31 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54110349A JPS6043016B2 (en) | 1979-08-31 | 1979-08-31 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5635439A JPS5635439A (en) | 1981-04-08 |
| JPS6043016B2 true JPS6043016B2 (en) | 1985-09-26 |
Family
ID=14533501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54110349A Expired JPS6043016B2 (en) | 1979-08-31 | 1979-08-31 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043016B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216610A (en) * | 1985-07-16 | 1987-01-24 | Asahi Glass Co Ltd | Container of ultrasonic delay line and its manufacture |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4745455A (en) * | 1986-05-16 | 1988-05-17 | General Electric Company | Silicon packages for power semiconductor devices |
| JP5040234B2 (en) | 2006-09-26 | 2012-10-03 | 三菱電機株式会社 | Pressure contact type semiconductor device |
-
1979
- 1979-08-31 JP JP54110349A patent/JPS6043016B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216610A (en) * | 1985-07-16 | 1987-01-24 | Asahi Glass Co Ltd | Container of ultrasonic delay line and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5635439A (en) | 1981-04-08 |
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