JPS6042832A - Ion beam device - Google Patents
Ion beam deviceInfo
- Publication number
- JPS6042832A JPS6042832A JP15123283A JP15123283A JPS6042832A JP S6042832 A JPS6042832 A JP S6042832A JP 15123283 A JP15123283 A JP 15123283A JP 15123283 A JP15123283 A JP 15123283A JP S6042832 A JPS6042832 A JP S6042832A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- workpiece
- vacuum container
- processed
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、イオンビームを照射し、イオンのスパッタリ
ング効果によって、薄膜の露出部をエツチングして、基
板上に薄膜回路等を形成するためのイオンビーム装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an ion beam for forming a thin film circuit or the like on a substrate by irradiating an ion beam and etching the exposed portion of a thin film by the sputtering effect of the ions. It is related to the device.
従来例の構成とその問題点
近年、半導体分野？中心に薄膜を利用し７たデバイスの
需要は、年々高まっている〇一方、その製造方法におい
ては、薄膜の付着、除去と種々の工程があり、用途に応
じ、適切な加工法および装置を利用している。この薄膜
除去法の一つとして、イオンビームエツ゛チング法が検
討されている。Conventional configuration and its problems In recent years, semiconductor field? The demand for devices that mainly utilize thin films is increasing year by year. However, the manufacturing method involves various processes such as thin film attachment and removal, and it is necessary to use appropriate processing methods and equipment depending on the application. We are using. Ion beam etching is being considered as one method for removing this thin film.
以下、図面を参照しながら、従来のイオンビーム装置に
ついて説明する。Hereinafter, a conventional ion beam apparatus will be described with reference to the drawings.
従来のイオンビーム装置は、第１図にその具体構成を示
す。第１図において、１は真空状態を維持することが可
能な真空容器、２はイオンビームを発生するイオンビー
ム発生器、３はレジストマスクによって、パターン形成
された被加工ｍ、ａａは材質がガラスの基材、３ｂは真
空蒸着法で形成された膜厚が約１０００人の金属薄膜、
３Ｃは膜厚が約１．７μｍのレジストマスク、４μ被カ
ロエ物３を保持し、かつ被加工物３を冷却すること力；
可能な試料台、６はイオンビーム発生器２より発生する
イオン粒子がアルゴン（以下Ａｒと略す）イオン−のイ
オンビームである０
以上のように構成されたイオンビーム装置について、以
下その動作を説明する０
ま、ず、真空ポンプにより、真空容器１内の真空度を２
Ｘ １０−５Ｔｏｒｒ以下に真空排気した後、Ａにガ
スを６．０ないしｙ、ｏ ＳＣＣＭの流量でイオン発生
器２に導入し、真空容器１内の真空度を１．８Ｘ１０”
−’Ｔｏｒｒ程度に保持する。次に、イオン発生器２の
構成部品に所定の電力および冷却水等を供給し、被加工
物３方向にＡｒイオンのイオンビーム５を発生させ、被
加工物３にＡｒイオンを照射する。被加工物３表面に衝
突したＡｒイオン粒、子は、被加工物３の原子を除去す
る。加速されたＡｒイオン粒子が、被加工物３に衝突す
ると、Ａｒイオン粒子の運動量が被加工物３の原子に移
り、その原子は、Ａｒイオン粒子により、はじき出され
る。すなわち、イオンビーム５照射によるエツチングは
、スパッタリング効果に起因し、Ａｒイオン粒子のエネ
ルギーが、被加工物３の構成原子の結合エネルギー（約
２６ｅＶ）より、大きい場合に進行する。この場合、レ
ジストマスク３ｃも、エツチングされるべき金属薄ｉｓ
ｂと共にイオンビーム５によって除去されるが１、金属
薄膜、３ｂに比較し、レジストマスク３ｃの膜厚が木き
いため、金属薄膜３ｂの露出部が、レジストマスク３ｃ
よりも早く除去することが可能である。また、イオンビ
ーム６照射による被加工物３の加工速度（工・ンチング
速度’）Ｒ（＃）は、一般に次式で表わされる。The specific configuration of a conventional ion beam device is shown in FIG. In FIG. 1, 1 is a vacuum container capable of maintaining a vacuum state, 2 is an ion beam generator that generates an ion beam, 3 is a resist mask, and pattern-formed workpiece m, aa is made of glass. The base material 3b is a metal thin film with a thickness of about 1000 mm formed by vacuum evaporation method,
3C is a resist mask with a film thickness of about 1.7 μm, a force for holding a 4 μm coating object 3 and cooling the workpiece 3;
A possible sample stage 6 is an ion beam in which the ion particles generated by the ion beam generator 2 are argon (hereinafter abbreviated as Ar) ions.The operation of the ion beam apparatus configured as above will be explained below. 0 Well, with the vacuum pump, the degree of vacuum in the vacuum container 1 is increased to 2.
After evacuation to below X 10-5 Torr, gas A is introduced into the ion generator 2 at a flow rate of 6.0 to y, o SCCM, and the degree of vacuum in the vacuum vessel 1 is reduced to 1.8 x 10''.
-'Torr is maintained. Next, predetermined electric power, cooling water, etc. are supplied to the components of the ion generator 2, and an ion beam 5 of Ar ions is generated in the direction of the workpiece 3, so that the workpiece 3 is irradiated with Ar ions. The Ar ion particles that collide with the surface of the workpiece 3 remove atoms of the workpiece 3. When the accelerated Ar ion particles collide with the workpiece 3, the momentum of the Ar ion particles is transferred to the atoms of the workpiece 3, and the atoms are repelled by the Ar ion particles. That is, etching by irradiation with the ion beam 5 proceeds when the energy of the Ar ion particles is greater than the bonding energy (about 26 eV) of the constituent atoms of the workpiece 3 due to the sputtering effect. In this case, the resist mask 3c is also used as the metal thin film to be etched.
However, since the resist mask 3c is thicker than the metal thin film 3b, the exposed portion of the metal thin film 3b is removed by the ion beam 5.
can be removed more quickly. Further, the machining speed (machining/nching speed') R(#) of the workpiece 3 by irradiation with the ion beam 6 is generally expressed by the following equation.
ｕ（０）＝ＡｘＩｘＳ（θ） ｃｏｓ、４／ ／ ｎ
ＡＡ”ここで、ｎ’は被加工物３の原子密度（ａ ｔ
ｏｍａ １ｃｄｔ ）、ｌはイオンビーム電流密度（ｍ
Ａ／ｃｒり、θは被加工物３へのイオンビーム入射角、
Ｓ（のはスノ（ツタリング率、Ａは定数である。すなわ
ち、被加工物３の加工速度は、イオンビーム電流密度に
比例する関係がある。従がって、被加工物３に照射され
るイオンビーム６のイオンビーム電流密度が、被加、Ｌ
工物３表面上で、強弱の分布をもげ、被加工物３の加工
速度は、分布をもつことになる。概して、被加工物３に
は、加工均一性を要求するものが多い。例えば、オーバ
ーエツチング時、被加工層の下地に悪影響を与えるもの
、また、レジストの後退により、被加工物３の製品品質
を悪化させるもの等、加工均一性に伴う種々の問題があ
る。そこで、ビーム径が大きいイオンビーム６を用いて
、中央部のイオンビーム電流密度が比較的均一な部分を
利用して、被加工物３を処理する試みが成されてきた。u(0)=AxIxS(θ) cos, 4//n
AA'' Here, n' is the atomic density of the workpiece 3 (a t
oma 1cdt ), l is the ion beam current density (m
A/cr, θ is the angle of incidence of the ion beam on the workpiece 3,
S( is the sno(tuttering rate, A is a constant. In other words, the processing speed of the workpiece 3 is proportional to the ion beam current density. Therefore, the ion beam current density of the workpiece 3 is irradiated. The ion beam current density of the ion beam 6 has a strength distribution on the surface of the workpiece 3, and the processing speed of the workpiece 3 has a distribution. Many of them require processing uniformity. For example, when over-etching, there are cases where the underlying layer of the processed layer is adversely affected, or when the resist retreats, the product quality of the processed object 3 is deteriorated. There are various problems associated with uniformity.Therefore, attempts have been made to process the workpiece 3 by using the ion beam 6 with a large beam diameter and utilizing the central part where the ion beam current density is relatively uniform. has been accomplished.
しかし、被加工物３以外へのイオンビーム６の照射量が
増加するため、真空容器１内の構成部品に悪影響を与え
た。例えば、真空容器１内の駆動機構部品等をエツチン
グし、駆動のメカニズムに誤動作を発生させたシする欠
点を有していた。However, since the amount of irradiation of the ion beam 6 to areas other than the workpiece 3 increased, the components inside the vacuum container 1 were adversely affected. For example, it has the disadvantage that parts of the drive mechanism inside the vacuum container 1 are etched, causing malfunctions in the drive mechanism.
発明の目的
本発明は、このような従来の欠点を除去するものであり
、ビーム径の大きいイオンビームを利用し、被加工物の
加工均一性を向上させる際、捷だイオンビームを長時間
被加工物に照射する除、また、試料台上に位置する複数
の被加工物を１枚毎に、連続して処理する際、被加工物
以外の真空容器内に位置する構成部品に悪影響を与えな
いイオンビーム装置を提供するものである。Purpose of the Invention The present invention is intended to eliminate such conventional drawbacks, and when using an ion beam with a large beam diameter to improve the processing uniformity of a workpiece, it is possible to avoid using a shattered ion beam for a long time. In addition to irradiating the workpiece, when processing multiple workpieces one by one on a sample stage in succession, it may adversely affect components located in the vacuum container other than the workpieces. ion beam equipment.
発明の構成
本発明は、真空状態の維持が可能な真空容器と、ビーム
径が少なくとも１０配以上のイオンビームを発生するイ
オンビーム発生器と、イオンビームの照射によって、表
向加工される被加工物と、少なくとも１つ以上の被加工
物を保持する試料台と、イオンビーム発生器と被加工物
の間にあり、少なとも１つの被加工物以外の真空容器内
構成部品へのイオノビーム照射を遮断することが可能な
シャーイ体を設けることにより、イオしビーム照射時に
、真を容器内に位置する構成部品に悪影響を与えること
なく、被加工物の加工を可能にするものである。Structure of the Invention The present invention provides a vacuum container capable of maintaining a vacuum state, an ion beam generator that generates an ion beam with a beam diameter of at least 10 or more, and a workpiece whose surface is processed by irradiation with the ion beam. A sample stage that holds at least one workpiece, a sample stage that holds at least one workpiece, and an ion beam located between the ion beam generator and the workpiece, and that prevents ion beam irradiation to components in the vacuum vessel other than at least one workpiece. By providing a shielding body that can be shut off, it is possible to process a workpiece without adversely affecting the components located inside the container during ion beam irradiation.
実施例の説明 以下、本発明の一実施例を図面を参照して説明する。Description of examples Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第２図は、本発明の実施例におけるイオンビーム装置を
示すものである。第２図において、１１は真空容器、１
２はＡｒイオンのイオンビームを発生するイオノビーム
発生器、１３はレジストマスクによって、パターン形成
された被加工物、１３ａは口４０ ｍ１ｌｌ ＋厚さ０
．８咽の基材、１３ｂは真空蒸着法で基材１３ａ上に形
成された膜厚が約１０００人の金属薄膜、１３ｃは膜厚
が約１．７μｍのレジストマスク、１４は被加工物１３
を保持し、かつ被加工物１３を冷却することが可能で、
少なくとも一方向に移動することが可能な試料台、１６
はイオンビーム発生器１２より発生するビーム径が約８
０門のＡｒイオンのイオンビーム、１６は試料台１４と
イオンビーム発生器１２の間にあり、少なくとも１つの
被加工物１３以外へのイオンビームを遮断することが可
能な強制冷却された７ヤヘイ体、１６ａは材質がステン
レスであり、強制耐金属体または、金属メツシュである
。FIG. 2 shows an ion beam apparatus in an embodiment of the present invention. In Fig. 2, 11 is a vacuum container;
2 is an ion beam generator that generates an ion beam of Ar ions, 13 is a workpiece patterned with a resist mask, and 13a is an opening 40 ml + thickness 0.
．． 8 base materials, 13b is a metal thin film with a thickness of about 1000 people formed on the base material 13a by vacuum evaporation method, 13c is a resist mask with a film thickness of about 1.7 μm, 14 is a workpiece 13
It is possible to hold the workpiece 13 and cool the workpiece 13,
A sample stage capable of moving in at least one direction, 16
The diameter of the beam generated from the ion beam generator 12 is approximately 8
0 Ar ion ion beams, 16 are located between the sample stage 14 and the ion beam generator 12, and are forcibly cooled 7 beams that can block the ion beam to other than at least one workpiece 13. The body 16a is made of stainless steel and is a forced metal-resistant body or a metal mesh.
以上のように構成されたイオンビーム装置について、以
下その動作を説明する。The operation of the ion beam apparatus configured as described above will be described below.
捷ず、真空ポンプにより、真空容器１１内の真空度を２
Ｘ１０ Ｔｏｒｒ以下に真空排気した後、イオンビーム
発生器１２にＡｒガスを導入する。この時、真空容器１
１内の真空度は１．８ Ｘ １０”−’ Ｔｏｒ ｒに
なる。次に、イオンビーム発生器１２に所定の電力およ
び冷却水等を供給し、Ａｒイオンのイオンビーム１６を
発生させる。イオンビーム１５は、ンヤヘイ体１６の口
４２陥の窓を通り、被加工物１３に入射し、被加工物１
３をエツチング加工する。被加工物１３の加工均一性を
向上させる目的で、被ＪａＴ物１３の処理面積に対し、
イオンビーム１６のビーム径が大きいものを利用し、そ
のビーム電流密度の均一な部分によって被加工物１３を
処理する方法をとっているため、イオンビーム１６の約
６５係は、被加工物１３の処理に対して、有効に作用し
ない。しかし、前記６６％のイオンビーム１５は、ンヤ
ヘイ体１６に入射し、シャヘイ体１６下の構成部品には
、照射され碌いため、構成部品に悪影響を与えることが
なかった。また、ンヤヘイ体１６は、強制冷却されてい
るため、長時間のイオンビーム１６照射においても、変
形等シストダメージがなかった。また、被加工物１３の
エツチング処理に伴い、エツチング生成物が、シャヘイ
体１６の被加工物１３側に飛来゛し、付着し、その膜厚
を増加し、被加工物１３の加工面に、唇下し、エツチン
グ加工をする危険性があるが、シャヘイ体１６の被加工
物１３１ＩｌｌＩは、発泡状の金属体１６ｂで構成され
ており、前記エツチング生成物薄膜との密着力は、非常
に強固なものであった。The degree of vacuum in the vacuum container 11 is increased to 2 by using a vacuum pump without being separated.
After evacuation to X10 Torr or less, Ar gas is introduced into the ion beam generator 12. At this time, vacuum container 1
The degree of vacuum inside the ion beam generator 12 is 1.8 x 10''-' Torr.Next, a predetermined power, cooling water, etc. are supplied to the ion beam generator 12, and an ion beam 16 of Ar ions is generated.Ions The beam 15 passes through the window at the mouth 42 of the Nyahei body 16, enters the workpiece 13, and enters the workpiece 13.
3 is etched. In order to improve the processing uniformity of the workpiece 13, the processing area of the JaT workpiece 13 is
Since the ion beam 16 with a large beam diameter is used and the workpiece 13 is processed by a portion with a uniform beam current density, approximately 65% of the ion beam 16 is applied to the workpiece 13. Does not have an effective effect on processing. However, the 66% ion beam 15 was incident on the Nyahei body 16 and was able to irradiate the components under the Shahei body 16, so that it did not have any adverse effect on the components. Further, since the Nyahei body 16 was forcedly cooled, there was no cyst damage such as deformation even during long-time irradiation with the ion beam 16. In addition, as the workpiece 13 is etched, the etching product flies to the workpiece 13 side of the shading body 16 and adheres thereto, increasing the film thickness and causing the etching product to appear on the processed surface of the workpiece 13. Although there is a risk of lip-cutting and etching, the workpiece 131IllI of the Shahei body 16 is composed of a foamed metal body 16b, and the adhesion with the etching product thin film is very strong. It was something.
以上のように、試料台１４とイオンビーム発生器１２と
の間にあり、少なくとも１つの被加工物１３以外の真空
容器内構成部品へのイオンビーム１６照射を遮断するこ
とが可能なシャヘイ体１６を設けることにより、ビーム
径の大きいイオンビーム１６を利用し、被加工物１３の
加工均一性を向上させる際、また、イオンビーム１５を
長時間被加工物１３に照射する際、捷だ、試料台１４上
に位置する複数の被加工物１３を１枚毎に連続して処理
する゛際、被加工物１３以外の真空容器１１内に゛位置
する構成部品に悪影響を与えない様にすることが可能で
ある。As described above, the Shahei body 16 is located between the sample stage 14 and the ion beam generator 12 and is capable of blocking irradiation of the ion beam 16 to components inside the vacuum container other than at least one workpiece 13. By providing a To avoid adversely affecting components located in a vacuum container 11 other than the workpieces 13 when successively processing a plurality of workpieces 13 located on a table 14 one by one. is possible.
発明の効果
以上のように本発明は、特に試料台とイオンビ−ム発生
器との間にあり、少なくとも１つの被加工物以外の真空
容器内構成部品へのイ、オンビーム照射・を遮断するこ
とが可能なシャヘイ体を設けることにより、ビーム径の
大きいイオンビームを利用し、被加工物の加工均一性を
向上させる際、また、イオンビームを長時間被加工物に
照射する際、また、試料台上に位置する複数の被加工物
を１枚毎に連続して処理する際、被加工物以外の真空容
器内に位置する構成部品に悪影響を与えない様にするこ
とが可能であり、実用上、きわめて有利なものである。Effects of the Invention As described above, the present invention is particularly advantageous in that it is possible to block on-beam irradiation to components in a vacuum chamber other than at least one workpiece, which is located between a sample stage and an ion beam generator. By providing a Shahei body that is capable of When processing multiple workpieces located on a table one by one, it is possible to avoid adversely affecting the components located in the vacuum container other than the workpieces, making it practical. Above all, it is extremely advantageous.
第１図は従来のイオンビーム装置を示す断面図、第２図
は本発明Ｑ−実施例におけるイオンビーム装置を示す断
面図である。
１１・・・・・・真空容器、１２・・・・・・イオンビ
ーム発生器、１３・・・・・・被加工物、１４・・・・
・・試料台、１６・・・・・・シャヘイ体。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｍ１
図FIG. 1 is a sectional view showing a conventional ion beam device, and FIG. 2 is a sectional view showing an ion beam device according to the Q-embodiment of the present invention. 11... Vacuum container, 12... Ion beam generator, 13... Workpiece, 14...
...Sample stage, 16...Shahei body. Name of agent: Patent attorney Toshio Nakao and 1 other person m1
figure
Claims (1)
径が少なくとも１ｏｒｒａｎ以上のイオンビームを発生
するイオンビーム発生器と、前記真空容器内にあり、イ
オンビーλの照射によ−て表面加工される被加工物と、
前記少なくとも１つ以上の被加工物を保持する試料台と
、イオンビーム発生器と被加工物の間にあり、少なくと
も１つの被加工物以外の真空容器内構成部品へのイオン
ビーム照射を遮断するシャヘイ体とからなるイオンビー
ム装置。、 （２） シャヘイ体は、強制冷却によって、低温度に保
持される特許請求の範囲第１項記載のイオンビーム装置
。 （３）シャヘイ体は、発泡状の金属体により構成する特
許請求の範囲第１項記載のイオンビーム装置。 （４） シャヘイ体は、少なくとも被加工物側の部分が
、金属メ・ンシュより構成される特許請求の範囲第１項
記載のイオンビーム装置。 （６）試料台は、イオンビーム照射時に少なくとも一方
向に動くことが可能である特許請求の範囲第１項記載の
イオンビーム装置。 （６） イオンビームは、アルゴンイオンのイオンビー
ムである特許請求の範囲第１項記載のイオンビーム装置
。[Scope of Claims] (1) A vacuum container capable of maintaining a vacuum, an ion beam generator that generates an ion beam with a beam diameter of at least 1 orran, and an ion beam generator disposed within the vacuum container and irradiated with an ion beam λ. A workpiece whose surface is processed by
A sample stage that holds the at least one workpiece, and is located between the ion beam generator and the workpiece, and blocks ion beam irradiation to components inside the vacuum container other than the at least one workpiece. An ion beam device consisting of a Shahei body. (2) The ion beam device according to claim 1, wherein the Shahei body is maintained at a low temperature by forced cooling. (3) The ion beam device according to claim 1, wherein the Shahei body is constituted by a foamed metal body. (4) The ion beam apparatus according to claim 1, wherein at least a portion of the Shahei body on the workpiece side is made of a metal mesh. (6) The ion beam apparatus according to claim 1, wherein the sample stage is movable in at least one direction during ion beam irradiation. (6) The ion beam device according to claim 1, wherein the ion beam is an ion beam of argon ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15123283A JPS6042832A (en) | 1983-08-18 | 1983-08-18 | Ion beam device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15123283A JPS6042832A (en) | 1983-08-18 | 1983-08-18 | Ion beam device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6042832A true JPS6042832A (en) | 1985-03-07 |
| JPH0347573B2 JPH0347573B2 (en) | 1991-07-19 |
Family
ID=15514129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15123283A Granted JPS6042832A (en) | 1983-08-18 | 1983-08-18 | Ion beam device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6042832A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172076A (en) * | 1986-01-24 | 1987-07-29 | ゼロツクス コ−ポレ−シヨン | Ink jet composition and its production |
| US6037391A (en) * | 1997-06-24 | 2000-03-14 | Mitsubishi Pencil Kabushiki Kaisha | Water based dye ink composition for free ink rollerball pen |
| WO2002095085A1 (en) * | 2001-05-22 | 2002-11-28 | Infineon Technologies Ag | Method for producing a layer with a predefined layer thickness profile |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130288A (en) * | 1976-04-26 | 1977-11-01 | Hitachi Ltd | Patterning method |
| JPS5539690A (en) * | 1978-09-14 | 1980-03-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Plasma etching device |
| JPS5575220A (en) * | 1978-12-01 | 1980-06-06 | Nec Corp | Ion-etching apparatus |
| JPS5946031A (en) * | 1982-09-09 | 1984-03-15 | Fujitsu Ltd | Plasma treating device |
| JPS5946748A (en) * | 1982-09-10 | 1984-03-16 | Nippon Telegr & Teleph Corp <Ntt> | Ion shower unit |
-
1983
- 1983-08-18 JP JP15123283A patent/JPS6042832A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130288A (en) * | 1976-04-26 | 1977-11-01 | Hitachi Ltd | Patterning method |
| JPS5539690A (en) * | 1978-09-14 | 1980-03-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Plasma etching device |
| JPS5575220A (en) * | 1978-12-01 | 1980-06-06 | Nec Corp | Ion-etching apparatus |
| JPS5946031A (en) * | 1982-09-09 | 1984-03-15 | Fujitsu Ltd | Plasma treating device |
| JPS5946748A (en) * | 1982-09-10 | 1984-03-16 | Nippon Telegr & Teleph Corp <Ntt> | Ion shower unit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172076A (en) * | 1986-01-24 | 1987-07-29 | ゼロツクス コ−ポレ−シヨン | Ink jet composition and its production |
| US6037391A (en) * | 1997-06-24 | 2000-03-14 | Mitsubishi Pencil Kabushiki Kaisha | Water based dye ink composition for free ink rollerball pen |
| WO2002095085A1 (en) * | 2001-05-22 | 2002-11-28 | Infineon Technologies Ag | Method for producing a layer with a predefined layer thickness profile |
| EP1816233A2 (en) * | 2001-05-22 | 2007-08-08 | Infineon Technologies AG | Method for manufacturing a layer with a predefined layer thickness profile |
| EP1816233A3 (en) * | 2001-05-22 | 2007-08-22 | Infineon Technologies AG | Method for manufacturing a layer with a predefined layer thickness profile |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0347573B2 (en) | 1991-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2662321B2 (en) | Surface treatment method using ultra-slow cluster ion beam | |
| US3860783A (en) | Ion etching through a pattern mask | |
| US4886681A (en) | Metal-polymer adhesion by low energy bombardment | |
| US4620898A (en) | Ion beam sputter etching | |
| EP0206145B1 (en) | A method of metallising an organic substrate so as to achieve improved adhesion of the metal | |
| US4097636A (en) | Metallized device | |
| JPH05106020A (en) | Shield preparation for reducing fine particle in physical vapor deposition room | |
| US5708267A (en) | Processing method using fast atom beam | |
| JP2757546B2 (en) | Method and apparatus for etching Fe-containing material | |
| JPS6042832A (en) | Ion beam device | |
| JPH0417672A (en) | Ion beam sputtering apparatus and its operation | |
| JPS59170270A (en) | Apparatus for forming film | |
| JP3408311B2 (en) | Digital etching method and apparatus | |
| CA1071578A (en) | Cathode sputtering method for the manufacture of etched structures | |
| JPS59208726A (en) | Ion beam apparatus | |
| JPH0524959A (en) | Manufacture of ceramic circuit board | |
| JPH01309963A (en) | Sputtering device | |
| JPH02262335A (en) | Eliminating method of organic compound film | |
| JPS6348933Y2 (en) | ||
| JPS6136376B2 (en) | ||
| JP3078164B2 (en) | Fine processing method | |
| JP3525134B2 (en) | Cluster ion beam mass separation method | |
| JPH06207277A (en) | Production of molding having small pattern | |
| JPH0410415A (en) | Dry etching method | |
| JPH02290243A (en) | Flat processing method for hard film material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |