JPS6039869A - Structure of semiconductor superlattice - Google Patents
Structure of semiconductor superlatticeInfo
- Publication number
- JPS6039869A JPS6039869A JP58146703A JP14670383A JPS6039869A JP S6039869 A JPS6039869 A JP S6039869A JP 58146703 A JP58146703 A JP 58146703A JP 14670383 A JP14670383 A JP 14670383A JP S6039869 A JPS6039869 A JP S6039869A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- doped
- algaas
- layers
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003362 semiconductor superlattice Substances 0.000 title claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 14
- 230000004888 barrier function Effects 0.000 abstract description 10
- 238000010030 laminating Methods 0.000 abstract description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 12
- 230000005533 two-dimensional electron gas Effects 0.000 description 18
- 230000037230 mobility Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（，１発明の技術分野
本発明は半導体超格子構造１％にヘテロ接合界面に平行
な方向に大きい導電率を有する変調ドープ砒化アルミニ
ウム・ガリウム／砒化ガリウム系半導体超格子構造に関
する。Detailed Description of the Invention (1) Technical Field of the Invention The present invention relates to a modulated doped aluminum gallium arsenide/gallium arsenide based semiconductor superlattice having a semiconductor superlattice structure of 1% and a large electrical conductivity in the direction parallel to the heterojunction interface. Regarding structure.
（１）） 技術の背景
社会の情報化か急速に進展しつつあるが１次世代への飛
躍を考えるときその基礎となるべきエレクトロニクス技
術には幾つかの限界が予測きれる。(1)) Background of technology Information society is rapidly progressing, but when we think about making the leap to the next generation, we can foresee some limitations in the electronics technology that will form the basis of it.
すなわち基本とな・、）デバイス（素子）の動作速度集
積密度或いは波長帯域等には材料物性によ／】限界があ
り、このデバイスの限界によってシステム、の進展が制
約されることとなる、。In other words, there is a fundamental limit to the operating speed, integration density, wavelength band, etc. of a device (element) depending on the physical properties of the material, and this device limit will restrict the progress of the system.
この材料物性に基づく限界を打破する可能性が人工的に
創造される超格子結晶構造に期待されている。すなわち
異なる材料よりなる単原子層乃至数１０ｗ、子層程度の
層を周期的に成長させた超格子構造に訃いては１通常の
結晶で（−１ポテンシヤル場の周期がその格子定数で定
まるのに対して、前記周期で定“まるこれより太きい周
期が形成されて電子の負質量すなわち負性抵抗が観測さ
れるなど新しい可能性がうかがわれる・この様な可能性
を有する超格子構造によって新機能素子１例えｆ−ｉ新
型超高速トランジス〃、高感度かつ高効率の可視光紗、
紫外線、Ｘ線の変換素子、或いは光双安定論理素子など
が実現されることとなろう、（ｃ）従来技術と問題点
超格子構造によって先に述べた如く９通常の固体内にお
ける原子間隔より大きい周期で２次元的な周期ボテンシ
ャルを形成することかできるが。Artificially created superlattice crystal structures are expected to have the potential to overcome these limitations based on material properties. In other words, in a superlattice structure in which monoatomic layers to several tens of nanometers of sublayers made of different materials are grown periodically, in a normal crystal (-1 the period of the potential field is determined by its lattice constant). On the other hand, a new possibility is suggested, such as the formation of a wider period determined by the above period and the observation of negative mass of electrons, that is, negative resistance.A superlattice structure with such a possibility. One new functional element is the fi-i new type of ultra-high-speed transistor, a highly sensitive and highly efficient visible light gauze,
Ultraviolet and X-ray conversion elements, optical bistable logic elements, etc. will be realized. (c) Prior art and problems As mentioned above, the superlattice structure will reduce the atomic spacing in a normal solid. However, it is possible to form a two-dimensional periodic botential with a large period.
この２次・元的なポテンシャルによつ−Ｃ２次元状態の
電子すなわち２次元電子ガスを実現することができる、
従来の通常の半導体デバイスで１キヤリアはドナーやア
クセプタ不純物が添加され、したがってそれらの不純物
が存在している領域内を移動する１、移動に際してキャ
リアは格子振動および不純物イオンによって散乱を受け
るが、格子振で１１による散乱の確率を小さくしてキャ
リアの移動度を大きくするためＩＣ低温にすると、不純
物イオンによるクーロン散乱の確率が大きくなつ１キヤ
リアの移動度は期待するように大きくはならない。Due to this two-dimensional/dimensional potential, electrons in the -C two-dimensional state, that is, two-dimensional electron gas, can be realized. When carriers move in a region where impurities exist, they are scattered by lattice vibrations and impurity ions, but in order to reduce the probability of scattering by 11 due to lattice vibrations and increase carrier mobility, IC low temperature is used. When this happens, the probability of Coulomb scattering due to impurity ions increases, and the mobility of one carrier does not become as large as expected.
不純物イオンは所要の多数キャリアを得るために必要で
あるがキャリアが移動する領域と同じ領域に加える必要
はなく、不純物が添加される領域とキャリアが移動する
領域とを空間的に分離すれば、不純物散乱効果を抑制し
てキャリアの移動度を大きくすることができる。Although impurity ions are necessary to obtain the required majority carriers, they do not need to be added to the same region where the carriers move; if the region where the impurity is added and the region where the carriers move are spatially separated, The carrier mobility can be increased by suppressing the impurity scattering effect.
前記２次元電ｒガスはこの不純物から空間的に分離され
たギヤリアであり、これを実現す、ルン代費的構造（４
１次のとおりである。すなわち、ノンドーグの砒化ガリ
ウノ、（ＣＪｈΔｅ）層上に、ドナー不純物としてシリ
コノ（Ｓｌ）を添加した砒化アルミニラ１１ガリウム（
Ａｔ１ａＡθ）ＷＩを成長させると。The two-dimensional electric gas is a gear which is spatially separated from this impurity, and a structure similar to that of a run (4) is used to realize this.
The first order is as follows. That is, on a non-doped gallium arsenide (CJhΔe) layer, a layer of aluminum 11 gallium arsenide (CJhΔe) doped with silicon (Sl) as a donor impurity was formed.
When At1aAθ)WI is grown.
ＡｔＧａΔρ層内の【７１から供給された電子は禁制帯
幅が小さく電子に対するボテンシャルエネルギーが小さ
い（］ａＡ１１層側に煮Ｇして、ヘモロ接合界面近傍Ｖ
ｒ、２次元電子ガスが形成される この梯なＳ１選択ド
ープΔｔ（ＩａＡｓ／ＱｎＡｅシングルへ７−ロ構造結
晶では、既に例えば温度７７（Ｋ）において２次元電子
ガス移動度／’ｎ＝１１．７，０００（ｃＪ／Ｖ、＋（
）程度の値がイυられでいる、
上記のＳ１選択ドープΔ／、Ｏｎ／１．Ｓ／ｉ、ｌａ、
Ａｒシングルへテロ構造を積層して超格子構造を形成す
るならは、へテロ接合界面に平行な方向（以下横方向と
略称する）について高電子移動度、従って高導電率の半
導体基体が得られるものと期待される。Electrons supplied from [71 in the AtGaΔρ layer have a small forbidden band width and low potential energy for electrons (]aA11 layer side, and V near the hemojunction interface.
r, a two-dimensional electron gas is formed.In this stepped S1 selective doping Δt (IaAs/QnAe single to seven-ro structure crystal, the two-dimensional electron gas mobility/'n=11. 7,000 (cJ/V, +(
) of the above S1 selective doping Δ/, On/1. S/i, la,
If a superlattice structure is formed by stacking Ar single heterostructures, a semiconductor substrate with high electron mobility in the direction parallel to the heterojunction interface (hereinafter referred to as lateral direction) and therefore high conductivity can be obtained. It is expected that
第１図はこの目的で形成された変調ドーグｎ −Ａ ｔ
ｏ ａ Ａｓ ／ｅ ｅ、 ＡＥ＋超格子構造の伝導
帯のコーネルギーバンド図である。図に示す如く本従来
例の超格（、−” ）程［Ｋドーグしたｎ型Ａ ！０．
３ （ｌ ａ ０．７ ｈｓｂｉ １：電子供給層３．
ノンドーグのＡ ｌ ０．３ （Ｊ ａ、 ０．７ΔＧ
スペーサ層４０組合わせを１周期として構成されて、２
次元電子ガス７及Ｑ・８が形成されている。なおエピタ
キシャル結晶成長は図中矢印で示す如く、スペーサ層２
→電子供給層３◆スペーサ層４の方向に行なわれている
・
前記の超格子構造１（おいてね二、その１周期内ヲＣ２
層の２次元電子カス７及υ・８が形成される。第１の２
次元電子ガス７は先に成長さ−ｄ／ｃノンドープＧａＡ
ｏ層１上にＡＡ（］ａＡｆ１層２及び３を成長したヘテ
ロ接合界面に形成され、第２の２次元電子ガス８は先）
Ｃ成長さ・毬７’（Ａ４ＧａＡｅ層３及び４上にＧａＡ
θ層１を成長したヘテｌｆｆ接合界面に形成されている
。FIG. 1 shows a modulated dog n −A t formed for this purpose.
o a As /e e, is a Corergie band diagram of the conduction band of the AE+ superlattice structure. As shown in the figure, the super case (,-") of this conventional example [K-dawg n-type A!0.
3 (l a 0.7 hsbi 1: electron supply layer 3.
Nondawg A l 0.3 (J a, 0.7ΔG
40 combinations of spacer layers constitute one period,
Dimensional electron gases 7 and Q.8 are formed. The epitaxial crystal growth is performed on the spacer layer 2 as shown by the arrow in the figure.
→ Electron supply layer 3 ◆ Spacer layer 4
Two-dimensional electronic debris 7 and υ·8 of the layer are formed. 1st 2
Dimensional electron gas 7 is first grown -d/c non-doped GaA
Formed at the heterojunction interface where AA(]aAf1 layers 2 and 3 are grown on the o layer 1, and the second two-dimensional electron gas 8 is grown first)
C growth layer 7' (GaA on A4GaAe layers 3 and 4)
It is formed at the hetero lff junction interface where the θ layer 1 is grown.
この２種の２次元可、子ガス７及び８け、それぞれが単
独に形成すＪ１メー場合にその電子移動度が大きく異な
ること／Ｉ測測定れている、すなわち前記第１の構成の
２次元電子ガス番１先に述べた如くμｎ＝１１０．００
０ （ｅｌｖｖ、ＬＩ） ｊ？ｊ一度の電子移動度カ実
現ｊれるのに対しで、前記第２の構成の２次元電子ガス
はその電子秤ｉ’ｉ！Ｉ ｊ！’、３ ：ｒ ｒ＋ ＝
１０．０００１ｃｌ／Ｖ 、Ｆ＋ ）程度と著しく低
い１．この後者に１、・け乙電子ｆ８動度の低下は、ｎ
型Ａ ｌ ［Ｊ ａ、 ｒ□ｒ ｅ 電子供給層中のド
ナー不純物例えばＳＩＺ・−・ア１」接合界面を越えて
２次元電子ガスの領域Ｖこ１−Ｃ拡散すること（７−よ
ると考えられる、
先に第１図に示り、、Ａｌ超格子４１４造において、各
層の厚さを］／１′−プのＧｔｈΔｒ３層１について１
． ＝２５（ｎｍ）、ノン・ドーグのＡｔｃａ、ｔ１＊
４２及０・４についてｔ２＝ｔ４−Ｇ （ｎｍ３．
ｎ型Ａｔ（ｌａΔＳ電子供給層３につい千ｔ＊ ”１０
〔ｎｘｎ〕、従って１周期あたりの厚さＴ＝４７（＋
１ｍ） とし、こノ１をに口０周期積層した例につい１
．槓方向導質率σ、２次元電子ガス７及び８の電子移動
度μ７及びμｓ、並びに電子面濃１ｉｎ７及びｎ８’ｉ
ｉ：温吐７７〔Ｋ」において測定して次の如き結果が得
ら＃ｔているσ ≠１．ｌＸ１０’ （Ｓ−ｍ’ 〕μ
７−２０，０００ 〔ｃｌ／’Ｖ−ｓ ３ｎ７≠６ ｘ
１０” （ｍ−２：１
μａ ’ｉ”ｌＯ，０００（ｃ１１／”Ｖ−ｅ）。When these two types of two-dimensional gases 7 and 8 are formed independently, their electron mobilities are significantly different. Electronic gas number 1 As mentioned earlier, μn = 110.00
0 (elvv, LI) j? In contrast, the two-dimensional electron gas of the second configuration realizes the electron mobility i'i! I j! ', 3: r r+ =
10.0001cl/V, F+), which is extremely low. In this latter case, 1, the decrease in electronic f8 movement is n
type A l [J a, r□re donor impurity in the electron supply layer, e.g. SIZ・-・A1” Diffusion of the two-dimensional electron gas region V 1-C beyond the junction interface (according to 7- As shown in Fig. 1 above, in the Al superlattice 414 structure, the thickness of each layer is given by ]/1'-GthΔr3 for layer 1
．． =25 (nm), non-dawg Atca, t1*
42 and 0.4 t2=t4-G (nm3.
n-type At (laΔS 1,000t* ”10 per electron supply layer 3
[nxn], therefore the thickness per period T = 47 (+
1m), and for an example of laminating this 1 with 0 cycles, 1
．． conductivity σ in the radial direction, electron mobilities μ7 and μs of the two-dimensional electron gases 7 and 8, and electron surface concentrations 1in7 and n8'i
i: Measured at a temperature of 77 [K] and obtained the following results: σ ≠ 1. lX10'(S-m' 〕μ
7-20,000 [cl/'V-s 3n7≠6 x
10" (m-2:1 μa'i"lO,000(c11/"V-e).
ｎ、≠２ｘ ｌ Ｑ１２１−ｔｒｉ−’ 〕またノンド
ープのＧａＡｓ１悼１の厚さｔ、＝＝８０（ｎｍｌとし
その他の層ＶＣついてｄ前記従来例と同一の厚さとして
、１周期あたりの厚さＴ−１０２（ｎｍｌとした例につ
いてｔ」、次の如き結果が得られている
σ Ｆｌ、３ ｘ １０３（８・ａｎ−’ 〕μ、≠１
００．０００ （ｃｒＡ、／ Ｖ □ （１） 。n, ≠ 2x l Q121-tri-'] Also, the thickness of the non-doped GaAs1 layer t, ==80 (nml), and the thickness of the other layers VC is the same as that of the conventional example, and the thickness per period is T-102 (t for the example with nml), the following results are obtained σ Fl, 3 x 103 (8・an-' ] μ, ≠ 1
00.000 (crA, / V □ (1).
ｎ７≠６ Ｘ １０” （ｃｒｎ−’ ）す≠１０，０
００ ＣｅｒＡ／ Ｖ Ｕ〕。n7≠6×10” (crn-')su≠10,0
00 CerA/VU].
ｎ ＠ ：２ ｘ １０１２ 〔ａｍ−ｑ−）ただし、
横方向導電率σは亀仔の電荷をｅとして、電子移動度μ
７．μ８．電子面濃度ｎ７．ｎ８及び−周期あたりの厚
さＴとの間に次式に示す関係が成立する。n @ :2 x 1012 [am-q-) However,
The lateral conductivity σ is the electron mobility μ
7. μ8. Electronic surface concentration n7. The following relationship holds true between n8 and the thickness T per -period.
σ−ｅ （／ｌ ７．ｎ ７ ＋ ｔｒ ８．ｎ ８）
／Ｔ前記従来例についてＴ、ｉｌられた横方向導電率
σ−１１乃至１．３ ｘ Ｉ Ｏ’ （Ｓ−ｃｎＩ−＋
３ は、ＧａＡｓ単結晶について得られる上限値σＦ
Ｏ，８ｘ １ ｏ３（Ｓ −ｃｍ−＋ ）よりは高いが
超格子構造に対する期待を満足させるものとはいえ乃い
。σ-e (/l 7.n 7 + tr 8.n 8)
/T for the conventional example T,il lateral conductivity σ-11 to 1.3 x I O' (S-cnI-+
3 is the upper limit value σF obtained for GaAs single crystal
Although it is higher than O,8x 1 o3 (S -cm-+ ), it does not satisfy expectations for a superlattice structure.
前記測定値を検討すると、 Ｔ＝４７ （ｎ＋ｒ＋３゜
城′
ｔ、＝２５［ｎｍｌの例においては前記第１の構造２次
元電子ガス７の電子移動度がμ７−２０，０００（ｅ４
７Ｖ−＋＋ Ｊ と大幅【て低下することによって、捷
だ’ｒ＝ｔｏ２（ｎｍｌｊ、 ｔｌ−８０（ｎｍｌの例
においては２次元電子ガス７の電子移動度はμ７≠１０
０，０００〔ｃｒｙ／ Ｖ−０）どほぼ正常であるが、
−周期あたりの厚さＴの増加にＪ：つて、横方向導電率
σが低下してい・−）・
し＋ ＝２５ （１１１１１Ｊの例Ｖこおける第１の溝
底の２次元電子ガス７り電子＊ｔｋｂｅの低下は、ノン
ドープの１・ａＡ８ｆ’４１の上下両界面が接近してい
るために２次元電子ガス相互間の干渉を生ずることによ
ると判断され＝ ｔｒ −８０（ｎｒ＋−］の例におい
てはこの２次元電子ノｉス相互間が分ＩＩｆｌされて、
第１の構成の２次元電子ガス７の電子移動度が正常な値
を示すと判１析されろ、
（ｃｌ）発明の目的
本発明は、横方向導電率が前記現状より向上された変調
ドープＡ 、Ｉ Ｇ Ｆｌ、 Ａ ８ ／Ｇ ｎ、 Ａ
Ｒ超格子構造を提供することを目的とする、
Ｉρ）発明の構成
本発明の前記目的は、第１の砒化ガリウム層と第１の砒
化下ルミニウム・ガリウム層と、ドナー不純物がドープ
された第２の砒化アルミニウム・ガリウム層と、第３の
砒化アルミニウム・ガリウム層と、第２の砒化ガリウム
層と、厚さが５（ｎｍ）以下の第４の砒化アルミニウム
・ガリウＪ一層とが順次積層されて前記第１の砒化ガリ
ウム層に戻る周期が複数周期含まれてなら半導体超格子
構造により達成される。Considering the above measurement values, in the example of T=47 (n+r+3° Castle' t,=25 [nml), the electron mobility of the first structured two-dimensional electron gas 7 is μ7-20,000 (e4
7V-++ J, and the electron mobility of the two-dimensional electron gas 7 is μ7≠10
0,000 [cry/V-0] is almost normal, but
- As the thickness T per period increases, the lateral conductivity σ decreases. The decrease in electron *tkbe is determined to be due to the interference between two-dimensional electron gases due to the proximity of both the upper and lower interfaces of non-doped 1.aA8f'41.Example of = tr -80(nr+-) In this case, the two-dimensional electronic noise is divided by IIfl,
It is analyzed that the electron mobility of the two-dimensional electron gas 7 of the first configuration shows a normal value. A , I G Fl, A 8 /G n, A
Iρ) Structure of the Invention Aiming to provide an R superlattice structure. A second aluminum arsenide/gallium arsenide layer, a third aluminum arsenide/gallium layer, a second gallium arsenide layer, and a fourth aluminum arsenide/gallium J layer having a thickness of 5 (nm) or less are sequentially laminated. A semiconductor superlattice structure is achieved by including a plurality of periods in which the gallium arsenide layer returns to the first gallium arsenide layer.
（イ）発明の実施例
以下本発明づ：実施例により図面を参照して具体的に説
明する。Ｋｃ２図は９本発明による変調ドープＡ／、Ｇ
ａＡｌ１／Ｇａ、Ａａ超格子構造の実施例の伝導帯のエ
ネルギーバンド図である。図に示す如く本実施例の超格
子構造は、ノンドープのＧａＡｓ層１１゜ノンドーグの
ＡｔＯ，３Ｇａ０．７Ａｓスペ一サ層１２．Ｓｉを２
ｘ ｌ Ｏ” （ｃ＋＋＋−３）程度にドーグしたｎ型
ΔｔＱ、３ Ｇ ａ、 Ｑ、７ Ａ ｓ 電子供給＃１
３．ノンドープのＡｔＯ，３ＧａＯ，７Ａｓスペ一サ層
１４．ノンドープの（Ｊｎ、 Ａ ６層１５及びノンド
ープのＡ ｔ Ｏ，３Ｇ ａ Ｏ，７Ａ Ｅｌバリア層
１６が順次積層されて前記ノンドープの０ａＡＳ層１１
に戻る周期が繰返えされて・、前記第１の構成の２次元
電子ガス１７がノンドープのＧ ａ、 Ａ ｅ層１１の
ＡｔＧａＡｓ スペーサ層１２との界面近傍にまた前記
第２の構成の２次元電子ガス１８かノンドープのＧａＡ
ｓ層１５のＡｔＧａＡｅスペーサ層１４との層面４傍に
形成されている。(a) Embodiments of the Invention The present invention will now be described in detail by way of embodiments with reference to the drawings. Kc2 diagram is 9 Modulation doped A/, G according to the present invention
aAl1/Ga, is an energy band diagram of the conduction band of an example of the Aa superlattice structure. As shown in the figure, the superlattice structure of this embodiment includes a non-doped GaAs layer 11°, a non-doped AtO, 3Ga0.7As spacer layer 12. Si 2
x l O” (c+++-3) n-type ΔtQ, 3 Ga, Q, 7 A s Electron supply #1
3. Non-doped AtO, 3GaO, 7As spacer layer 14. A non-doped (Jn, A 6 layer 15) and a non-doped AtO, 3G a O, 7A El barrier layer 16 are sequentially stacked to form the non-doped 0aAS layer 11.
The cycle of returning to is repeated, and the two-dimensional electron gas 17 of the first configuration is added to the non-doped Ga, Ae layer 11 near the interface with the AtGaAs spacer layer 12, and the two-dimensional electron gas 17 of the second configuration is Dimensional electron gas 18 or non-doped GaA
It is formed near the layer surface 4 of the s-layer 15 with the AtGaAe spacer layer 14 .
本実施例においては前記半導体層１１乃至１６は分子線
エピタキシャル成長方法によって成長しており、各層の
厚さはノンドープのＧａＡｓ層１１及び１５Ｖｃついて
ｔＩＩ≠ｔＩＩ＋≠１０（ｎｍ）、ノンドープの、Ａｆ
ＧａＡ日 スペーサ層１２及（に １４ ＆てついてｔ
＋２：ｔ＋＊≠（ｉ（ｎｍ）、ｎ型Ａ４ＧａＡｅ電子供
給層１３じついてｔ１３己１０（ｎｍ１．ノンドーグ゛
のＡｔＧａ／ｌ バリア層１６についてｔｔｏ ？’５
（ｎｍ〕としている、従って１周期あたりの厚さＴ＝
４７（ｎｍ）で前記第１の従来例と同一である。この構
造を数１０周期繰返した本実施例について、前記従来例
と同様に温度７７（Ｋ）において測定した結果、下記の
横方向導電率σ、電子移動度μｍ７及び１１１８．並び
に電子面濃度ｎ１７及びｎ１８が得られている。In this embodiment, the semiconductor layers 11 to 16 are grown by the molecular beam epitaxial growth method, and the thickness of each layer is tII≠tII+≠10 (nm) for the non-doped GaAs layers 11 and 15Vc, and the thickness of the non-doped Af
GaA spacer layer 12 and 14 &
+2: t+*≠(i (nm), n-type A4GaAe electron supply layer 13 and t13 self 10 (nm 1.
(nm), therefore, the thickness per period T =
47 (nm), which is the same as the first conventional example. This example, in which this structure was repeated several dozen times, was measured at a temperature of 77 (K) in the same way as the conventional example, and the results were as follows: lateral conductivity σ, electron mobility μm7, and 1118. In addition, electronic surface concentrations n17 and n18 are obtained.
σ ≠２．７Ｘ１０３ （Ｓ−圀−リ μｍ７≠１００，０００ （ｃｄ／’Ｖ−Ｂ）。σ ≠ 2.7X103 (S-Kori-Li μm7≠100,000 (cd/'V-B).
ｎ１７≠６ ｘ １０” Ｃｃｒｓ−” ）μｍ８＝１
０，０００ （ｃｄ／Ｖ−ｓ 〕ｎ１８ｔ２ｘｌｏ”
Ｃｃｍ−２）
本実施例においては横方向導電率が前記従来例に比較し
て約２倍に増大している。この増大は１周期あたりの厚
さを増力けることなく２次元電子ガス１７と１８との間
１４７９７層１６を設けることによって両者間が分離さ
れたことｒこよる効果である
本実施例においては先に述べた如く厚さ約５（ｎｍｌの
Ａ ｔ ０．３ｕａ （１，７Ａ ｅ層をバリア層とし
ておりその組成比かスペーサ層及び電子供給層と同一で
あるが、これらの各ＡＩＧａＡ６層が同一組成比である
ことは必要条件ではない。バリア層の効果はバリア幅ず
なわち厚さとバリア高さすなわちＡｔｘＧａｌ−ＸＡＩ
ＩとＧａＡｓ との伝導帯のエネルギー差の平方根との
積によって定まるから、バリア層とするＡｔＸＧａ １
−ＸＡＦＩの組成比Ｘと厚さとの組恰わせを選択“〕る
ことによって所要の効果を得ることができる。ただしバ
リア層の厚さは１周期あたりの厚さを抑制するために５
（ｎｍ、Ｉ以下とすることが望ましい、。n17≠6 x 10” Ccrs-”)μm8=1
0,000 (cd/V-s]n18t2xlo”
Ccm-2) In this example, the lateral conductivity is approximately twice as high as that of the conventional example. This increase is due to the fact that the two-dimensional electron gases 17 and 18 are separated by providing the 14797 layer 16 between them without increasing the thickness per cycle. As mentioned above, the thickness is about 5 (nml) and the A t 0.3 ua (1,7 A) layer is used as a barrier layer, and its composition ratio is the same as that of the spacer layer and the electron supply layer, but each of these AIGaA6 layers is the same. The composition ratio is not a necessary condition.The effectiveness of the barrier layer depends on the barrier width, that is, the thickness, and the barrier height, that is, AtxGal-XAI
Since it is determined by the product of I and the square root of the energy difference in the conduction band of GaAs, the barrier layer AtXGa 1
- The desired effect can be obtained by selecting a combination of the composition ratio X of XAFI and the thickness.However, the thickness of the barrier layer is set to 5.
(It is desirable that it be less than nm, I.
（ｇ） 発明の詳細
な説明した如く本発明によれば、変調ドーグｎ−ＡｔＧ
ａＡｓ／ＧａＡｓ超格子構造において、高電子移動度の
２次元電子ガスと低電子移動度の２次元電子ガスとの間
の干渉が１周期あたりの厚さを増加することなく分離さ
れて、ペテロ接合面に平向な方向の導電度の増大が実現
される。(g) According to the present invention, as described in the detailed description of the invention, the modulated Dawg n-AtG
In the aAs/GaAs superlattice structure, the interference between the two-dimensional electron gas with high electron mobility and the two-dimensional electron gas with low electron mobility is separated without increasing the thickness per period, resulting in a Peter junction. An increase in conductivity in the direction parallel to the plane is achieved.
第１図は変調ドープｎ−ＡｔＧａＡｓ／ＧａＡｏ超格子
構造の従来例のエネルギーバンド図、第２図は本発明の
実施例のエネルギーバンド図である、図において、１１
及び１５はノンドーグのＧａＡｎ層、１２及び１４θノ
ンドープのＡｔ（ｌａΔ０スペーザ層、１３にＩｎ型Ａ
Ｌ（）ａＡｓ電子供給層、１６はノンドープ「υＡｔＧ
ａＡ３ バリア層、１７は第１の構成の２次元電子ガス
、１８は第２の構成の２次元電子ガスを示す。FIG. 1 is an energy band diagram of a conventional example of a modulation-doped n-AtGaAs/GaAo superlattice structure, and FIG. 2 is an energy band diagram of an embodiment of the present invention.
and 15 are non-doped GaAn layers, 12 and 14θ non-doped At (laΔ0 spacer layers, 13 is In-type A
L()aAs electron supply layer, 16 is non-doped “υAtG
aA3 barrier layer; 17 indicates the two-dimensional electron gas of the first configuration; and 18 indicates the two-dimensional electron gas of the second configuration.
Claims (1)
・ガリウム層と、ドナー不純物７．５・ドープされた第
２の砒化アルミニウム ガリウム層と、第３の砒化アル
ミニウム・ガリウム層と、第２の砒化ガリウム層と、厚
さが５〔ｎＩｎ〕以下の第４の砒化アルミニウム・ガリ
ウム層とが順次積層されて前記第１の砒化ガリウム層に
戻る周期が複数周期含首れてなることを特徴とする半導
体超格子構造。[Claims] A first gallium arsenide layer and a first aluminum arsenide layer.
・Gallium layer, second aluminum arsenide doped with donor impurity 7.5 gallium layer, third aluminum gallium arsenide layer, second gallium arsenide layer, with a thickness of 5 [nIn] or less A semiconductor superlattice structure comprising a plurality of periods in which a fourth aluminum-gallium arsenide layer is sequentially stacked and returns to the first gallium arsenide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58146703A JPS6039869A (en) | 1983-08-12 | 1983-08-12 | Structure of semiconductor superlattice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58146703A JPS6039869A (en) | 1983-08-12 | 1983-08-12 | Structure of semiconductor superlattice |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6039869A true JPS6039869A (en) | 1985-03-01 |
| JPH0121631B2 JPH0121631B2 (en) | 1989-04-21 |
Family
ID=15413636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58146703A Granted JPS6039869A (en) | 1983-08-12 | 1983-08-12 | Structure of semiconductor superlattice |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6039869A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501459A (en) * | 1985-11-22 | 1988-06-02 | ザ ゼネラル エレクトリツク カンパニ−，ピ−．エル．シ− | semiconductor equipment |
| JPH04260339A (en) * | 1990-10-19 | 1992-09-16 | Philips Gloeilampenfab:Nv | Semiconductor device |
-
1983
- 1983-08-12 JP JP58146703A patent/JPS6039869A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501459A (en) * | 1985-11-22 | 1988-06-02 | ザ ゼネラル エレクトリツク カンパニ−，ピ−．エル．シ− | semiconductor equipment |
| JPH04260339A (en) * | 1990-10-19 | 1992-09-16 | Philips Gloeilampenfab:Nv | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121631B2 (en) | 1989-04-21 |
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