JPS6037734A - Pattern formation - Google Patents

Pattern formation

Info

Publication number
JPS6037734A
JPS6037734A JP58147527A JP14752783A JPS6037734A JP S6037734 A JPS6037734 A JP S6037734A JP 58147527 A JP58147527 A JP 58147527A JP 14752783 A JP14752783 A JP 14752783A JP S6037734 A JPS6037734 A JP S6037734A
Authority
JP
Japan
Prior art keywords
pattern
mask
layer
film
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58147527A
Other languages
Japanese (ja)
Inventor
Hideaki Itakura
秀明 板倉
Masahiro Yoneda
昌弘 米田
Kuniaki Miyake
邦明 三宅
Masayuki Nakajima
真之 中島
Shinichi Sato
真一 佐藤
Takahisa Sakaemori
貴尚 栄森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58147527A priority Critical patent/JPS6037734A/en
Publication of JPS6037734A publication Critical patent/JPS6037734A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To form a flat film having least stepped portions by giving a larger light transparent coefficient of mask pattern provided on the mask plate to the peripheral part than to the center thereof and by generating inclination to the aperture generated on a resin film, therefore to the aperture of the layer to be processed under such risin film on the occasion of irradiating the photo sensitive resin film covering over the layer to be processed on the substrate with the light through the mask plate. CONSTITUTION:The layer 2 to be processed is deposited on a semiconductor substrate 1, it is then covered with a photo sensitive resin film 3 and a mask plate 24 having a mask pattern 25 formed by Cr is deposited thereon. In this case, amount of transparent light at the peripheral part is larger than that at the center and thereby amount of light entering the film 3 is controlled and gradient is generated at the periphery of remaining film 3. The layer 2 to be processed is etched with the film 3 used as the mask and the corresponding gradient is also generated herein. The thickness of the upper layer film 27 provided on the layer 2 is made equal any where so that thickness at the gradient area 28 is not reduced.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はパターン形成方法、特に半導体装置の製造工
程などに適用されるパターン形成方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a pattern forming method, and particularly to a pattern forming method applied to the manufacturing process of semiconductor devices.

〔従来技術〕[Prior art]

従来のこの種のパターン形成方法を第１図（ａ）ないし
くｄ）に示す。同図において、符号（１）は半導体基板
、（２）は被加工層、（３）は感光性樹脂膜、（４）は
感光用のマスク板、（５）はマスク板表面に形成された
マスクパターン、（６）は照射される光である。A conventional pattern forming method of this type is shown in FIGS. 1(a) to 1(d). In the figure, (1) is the semiconductor substrate, (2) is the layer to be processed, (3) is the photosensitive resin film, (4) is the photosensitive mask plate, and (5) is the layer formed on the surface of the mask plate. The mask pattern (6) is the irradiated light.

す々わち、従来方法においては、まず基板（１）上に形
成された被加工層（２）に対して、マスク板（４）上に
形成された一般にはクロムからなるマスクパターン（５
）全転写するのには、第１図（、）に示すように、被加
工層（２）上に感光性樹脂膜（３）を形成し、この感光
性樹脂膜（３）にマスク板（４）ヲ通して光（６）全照
射するが、この時、光（６）はマスクパターンを形成し
てない部分のみ透過して、感光性樹脂膜（３）ｆ：露光
する。そしてこの照射後、現像工程を減ることによって
、例えば感光性樹脂膜（３）がポジ型のときには、第１
図（ｂ）のように、照射部分の感光性樹脂膜（３）が除
去されて下地の被加工層（２）面が選択的に露出され、
またネガ型のときには反対に未照射部分が除去される。In other words, in the conventional method, first, a mask pattern (5) formed on a mask plate (4), generally made of chromium, is applied to a layer to be processed (2) formed on a substrate (1).
) For full transfer, as shown in Figure 1(, ), a photosensitive resin film (3) is formed on the layer to be processed (2), and a mask plate ( 4) All of the light (6) is irradiated through the photosensitive resin film (3), but at this time, the light (6) passes through only the portion where the mask pattern is not formed, and exposes the photosensitive resin film (3)f. After this irradiation, by reducing the number of development steps, for example, when the photosensitive resin film (3) is positive, the first
As shown in Figure (b), the photosensitive resin film (3) in the irradiated area is removed and the surface of the underlying layer to be processed (2) is selectively exposed.
Conversely, in the case of a negative type, the unirradiated portions are removed.

ついで現像後、例えば反応性イオンの化学的、物理的反
応を利用したドライエツチング法などによ）被加工層（
２のエツチングを行在い、かつエツチング完了後、残さ
れた感光性樹脂膜（３）を除去すると、第１図（ｃ）に
示す被加工層（２）のパターンを得ることができる。そ
して半導体装置の製造工程においては、その後さらに第
１図（ｄ）に示すように上層膜（７）全形成し、かつこ
の上層膜（７）のパターン形成がなされるのである。Then, after development, the layer to be processed (by, for example, a dry etching method that utilizes chemical and physical reactions of reactive ions)
2, and after the etching is completed, the remaining photosensitive resin film (3) is removed to obtain the pattern of the processed layer (2) shown in FIG. 1(c). In the manufacturing process of the semiconductor device, the upper layer film (7) is then completely formed and the upper layer film (7) is patterned, as shown in FIG. 1(d).

しかしながらこのような従来方法の場合には、前記の第
１図（ｃ）で得た被加工層（２）のパターン上に上層膜
（７）　’に形成すると、被加工層（２）のパターンの
断面形状が垂直に近く、従ってその段差が太きいために
、前記第１図（ｄ）にみられるように、この段差部（８
）に形成される上層膜（γ）の膜厚が薄くなって断線を
生ずる可能性が大きいものであった。However, in the case of such a conventional method, when the upper layer film (7)' is formed on the pattern of the processed layer (2) obtained in FIG. 1(c), the pattern of the processed layer (2) is Since the cross-sectional shape of 8 is close to vertical and the step is thick, this step part (8
) The thickness of the upper layer film (γ) formed on the wire becomes thinner, and there is a high possibility that wire breakage will occur.

〔発明の概要〕[Summary of the invention]

この発明は従来方法のこのような欠点を改善するために
なされたもので、マスク板に形成されるマスクパターン
の中央部と周辺部との光透過特性に差を与え、周辺部で
の光透過率を大きくさせて、同周辺部に対応する感光性
樹脂膜への光の照射量を多くシ、これによって感光性樹
脂膜パターンの該当周辺部断面を傾斜形状にさせ、かっ
この断面形状の感光性樹脂膜パターンをマスクにして、
反応性イオンの化学的、物理的反応を利用したドライエ
ツチング法によりエツチングさせることにより、形成さ
れる被加工層パターンの周辺部を傾斜断面として、同周
辺部を段差部の少くない平担化形状に形成させるように
したものである。This invention was made in order to improve the above-mentioned drawbacks of the conventional method, and it provides a difference in light transmission characteristics between the central part and the peripheral part of the mask pattern formed on the mask plate, and improves the light transmission in the peripheral part. By increasing the ratio, the amount of light irradiated to the photosensitive resin film corresponding to the peripheral area is increased, and thereby the cross section of the corresponding peripheral area of the photosensitive resin film pattern is made to have an inclined shape, and the photosensitive resin film with the cross-sectional shape of the parentheses is Using the resin film pattern as a mask,
By etching using a dry etching method that utilizes chemical and physical reactions of reactive ions, the peripheral part of the pattern to be processed is formed with an inclined cross section, and the peripheral part is flattened with few steps. It is designed so that it is formed.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明方法の実施例につき、第２図。 The following is an example of the method of this invention shown in FIG.

第３図（ａ）ないしくｄ）、第４図および第５図を参照
して詳細に説明する。This will be explained in detail with reference to FIGS. 3(a) to d), FIGS. 4 and 5.

この第２図、第３図（、）ないしくｄ）に示す第１実施
例方法において前記第１図（ａ）ｆｚいしくｄ）従来方
法と同一符号は同一または相当部分を示しておシ、この
第１実施例方法では、前記マスク板（４）に相当するマ
スク板（２４）上に形成されるマスクパターンを、第２
図に示すように、周辺部が傾斜したマスクパターン（２
５）として、同周辺部における光透過率を大きくさせた
ものである。In the method of the first embodiment shown in FIGS. 2 and 3 (a) to d), the same reference numerals as in the conventional method in FIG. In this first embodiment method, the mask pattern formed on the mask plate (24) corresponding to the mask plate (4) is
As shown in the figure, the mask pattern (2
5), the light transmittance in the peripheral area is increased.

従ってこのように形成されたマスク板（２４）ｅ通して
第３図（ａ）のように感光性樹脂膜（３）に光（６）全
照射すると、そのマスクパターン（２６）の中央部と周
辺部との光透過特性の差にょシ、感光性樹脂膜（３）へ
の光の照射量が異なるために、現像後の感光性樹脂膜パ
ターンの断面は、第３図（ｂ）に示すように、周辺部が
傾斜した形状になる。そこでこの感光性樹脂膜パターン
をエツチングマスクとして、被加工層（２）全反応性イ
オンの化学的、物理的反応を利用したドライエツチング
法にょシエッチングすると、エツチング中の感光性樹脂
膜（３）の除去もまた僅かながら進行するので、エツチ
ング終了後、感光性樹脂膜（３）を除去したときの被加
工層パターンの断面は、第３図（ｃ）にみられるような
、周辺部が傾斜面となって前記従来方法での段差部（８
）のない形状となる。そしてこの断面形状とされた被加
工層（２）上に上層膜（２７）’を形成すると、被加工
層パターンの周辺部断面が傾斜面となっていて、平担化
されているためにその段差該当部（２８）の上層膜（２
Ｔ）の膜厚が薄くなるようなことはなく、断線を生ずる
虞れもなくなるのである。Therefore, when the photosensitive resin film (3) is fully irradiated with light (6) through the mask plate (24)e formed in this way as shown in FIG. 3(a), the central part of the mask pattern (26) and Due to the difference in light transmission characteristics with the peripheral area and the difference in the amount of light irradiated to the photosensitive resin film (3), the cross section of the photosensitive resin film pattern after development is shown in Figure 3 (b). As shown, the peripheral part is inclined. Therefore, using this photosensitive resin film pattern as an etching mask, the layer to be processed (2) is etched using a dry etching method that utilizes the chemical and physical reactions of all reactive ions. The removal of the etching also progresses slightly, so when the photosensitive resin film (3) is removed after etching, the cross section of the pattern of the processed layer has a sloping peripheral part as seen in FIG. 3(c). The step part (8) in the conventional method is
). Then, when the upper layer film (27)' is formed on the processed layer (2) having this cross-sectional shape, the peripheral section of the processed layer pattern is an inclined surface, which is flattened. The upper layer film (2) of the step part (28)
The film thickness of T) does not become thinner, and there is no possibility of wire breakage.

また前記第１実施例では、マスクパターンの中央部と周
辺部との光透過特性に差を得る方法として、パターン周
辺部断面を傾斜形状にしているが、このような形状に限
定されるものではなく、例えば第４図に示す第２実施例
のように、同パターン周辺部の膜厚を異ならせたマスク
パターン（３５）としても、あるいは第５図に示す第３
実施例のように、パターン中央部と周辺部とのパターン
形成材料としてその光透過特性に差のあるものを用い、
同中央部での材料（４５ａ）Ｋ対して同周辺部での材料
（４５ｂ）の光透過率を良くしたマスクパターン（４５
）としてもよい。Furthermore, in the first embodiment, as a method of obtaining a difference in light transmission characteristics between the central part and the peripheral part of the mask pattern, the cross section of the peripheral part of the pattern is formed into an inclined shape, but the shape is not limited to this. For example, as in the second embodiment shown in FIG. 4, a mask pattern (35) with different film thicknesses around the same pattern may be used, or as in the third embodiment shown in FIG.
As in the example, a material with different light transmission properties is used as the pattern forming material for the central part and the peripheral part of the pattern,
A mask pattern (45
).

なお、前記各実施例においては、感光性樹脂膜としてポ
ジ型のものを用いた場合について述べたが、ネガ型のも
のを用いた場合には、前記露光部と未露光部とを反対に
して考えればよく、同様な効果を期待できる。In each of the above embodiments, the case where a positive type photosensitive resin film was used was described, but when a negative type photosensitive resin film is used, the exposed area and the unexposed area are reversed. If you think about it, you can expect similar effects.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように、この発明方法によれば、マスク板
に形成されるマスクパターンの中央部と周辺部との光透
過特性に差を与え、中央部よりも周辺部での光透過率を
大きく、つ″！勺同周辺部に対応する感光性樹脂膜への
光の照射量を多くして、感光性樹脂膜パターンの該当周
辺部断面を傾斜形状にさせ、かつこの断面形状の感光性
樹脂膜パターンをエツチングマスクにして、反応性イオ
ンの化学的、物理的反応を利用したドライエツチング法
により、被加工層パターンの周辺断面を傾斜形状、すな
わち段差の少ない平担化形状にし得るようにしたから、
この被加工層パターン上に形成される上層膜が段差該当
部で断線されるようなことがなく、併せて段差の少ない
平担化膜の形成を可能にし得るものである。As detailed above, according to the method of the present invention, a difference is created in the light transmission characteristics between the center and the periphery of the mask pattern formed on the mask plate, and the light transmittance in the periphery is lower than that in the center. By increasing the amount of light irradiated onto the photosensitive resin film corresponding to the peripheral area, the cross-section of the corresponding peripheral area of the photosensitive resin film pattern is made to have an inclined shape, and the photosensitivity of this cross-sectional shape is increased. By using the resin film pattern as an etching mask and using a dry etching method that utilizes the chemical and physical reactions of reactive ions, the peripheral cross section of the layer pattern to be processed can be made into an inclined shape, that is, a flattened shape with few steps. Since the,
The upper layer film formed on this processed layer pattern will not be disconnected at the portion corresponding to the step difference, and it is possible to form a flattened film with fewer steps.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（、）ないしくｄ）は従来イク１１によるパター
ン形成方法全工程順に示す断面説明図、第２図はこの発
明方法に用いる第１実施例のマスクパターンを示す詳細
断面図、第３図（、）ないしくｄ）は同上マスクパター
ンを用いたパターン形成方法を工程順に示す断面説明図
、第４図および第５図は同上マスクパターンの第２およ
び第３実施例を示すそれぞれ詳細断面図である。 （１）・・・・基板、（２）・・・・被加工層、（３）
・・・・感光性樹脂膜、（４）、（２４）・・・・マス
ク板、（５）、　（２５）　、　（３５）　、　（４５
）・・・・マスクパターン、（γ）・・・・上層膜、。 代　理　人　大　岩　増　雄 第１図 第２図 第３図 第４図 第５図 第１頁の続き ＠発明者　佐−藤　真− ＠発明者栄森　貴尚 伊丹市瑞原４丁目１番地　三菱電機株式会社エル・ニス
・アイ研究所内 伊丹市瑞原４丁目１番地　三菱電機株式会社エル・ニス
・アイ研究所内 特許庁長官殿 ｌ、事件の表示　特願昭５８−１４７５２７号２、発明
の名称　パターン形成方法 ３、補正をする者 事件との関係　特許出願人 住　所　東京都千代田区丸の内二Ｊ目２番３号名　称　
（６０１）三菱電機株式会社 代表者片山仁八部 ４、代理人 住　所　東京都千代田区丸の内二丁目２番３号明細書の
発明の詳細な説明の欄 ６、補正の内容1(a) to d) are cross-sectional explanatory views showing the entire process order of the conventional pattern forming method using Ik 11, FIG. 2 is a detailed cross-sectional view showing the mask pattern of the first embodiment used in the method of the present invention, and FIG. Figures (,) to d) are cross-sectional explanatory diagrams showing the pattern forming method using the same mask pattern in the order of steps, and Figures 4 and 5 are detailed cross-sections showing the second and third embodiments of the same mask pattern, respectively. It is a diagram. (1)...Substrate, (2)...Layer to be processed, (3)
...Photosensitive resin film, (4), (24)...Mask plate, (5), (25), (35), (45
)...Mask pattern, (γ)... Upper layer film. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 5 Continuation of page 1 @ Inventor Makoto Sato @ Inventor Sakaemori Mitsubishi Electric, 4-1 Mizuhara, Kisho Itami City 4-1 Mizuhara, Itami City, Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Co., Ltd., Mitsubishi Electric Corporation, L.N.I. Method 3: Relationship with the case of the person making the amendment Patent applicant address: 2-3, Marunouchi 2-J, Chiyoda-ku, Tokyo Name:
(601) Mitsubishi Electric Corporation Representative Hitoshi Katayama 4, Agent address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Column 6 of the detailed description of the invention in the specification, Contents of amendment

Claims (1)

【特許請求の範囲】 （１ンマスク板表面のマスクパターンを、光照射によシ
被加工層上の感光性樹脂膜に転写して露光。 現像させ、この感光性樹脂膜パターンをマスクに被加工
層をエツチングしてパターン形成する方法において、前
記マスクパターンの中央部と周辺部との光透過特性に差
を与え、中央部よシも周辺部での光透過率、ひいては同
周辺部に対応する感光性樹脂膜への光の照射量を多くさ
せ、かつこれをマスクに被加工層を反応性イオンによシ
トライエツチングすることを特徴とするパターン形成方
法。 （２）マスクパターンの周辺部を傾斜断面形状としたこ
とを特徴とする特許請求の範囲第１項記載のパターン形
成方法。 （３）マスクパターンの中央部膜厚よすも周辺部膜厚を
薄くしたことを特徴とする特許請求の範囲第１項記載の
パターン形成方法。 （４）マスクパターンの中央部パターン形成材料の光透
過率よりも周辺部パターン形成材料の光透過率を良くし
たことを特徴とする特許請求の範囲第１項記載のパター
ン形成方法。[Claims] (The mask pattern on the surface of the mask plate is transferred to the photosensitive resin film on the layer to be processed by light irradiation and exposed. The photosensitive resin film pattern is developed and used as a mask to be processed. In a method of forming a pattern by etching a layer, a difference is made in the light transmission characteristics between the central part and the peripheral part of the mask pattern, so that the light transmittance of the central part corresponds to that of the peripheral part, and thus the same peripheral part. A pattern forming method characterized by increasing the amount of light irradiated onto the photosensitive resin film, and using this as a mask, the layer to be processed is etched by reactive ions. (2) The periphery of the mask pattern is A method for forming a pattern according to claim 1, characterized in that the mask pattern has a sloped cross-sectional shape. (3) A patent claim characterized in that the film thickness in the central part of the mask pattern is made thinner and the film thickness in the peripheral part is made thinner. The pattern forming method according to claim 1. (4) The method of forming a pattern according to claim 1, characterized in that the light transmittance of the pattern forming material in the peripheral part of the mask pattern is made higher than the light transmittance of the pattern forming material in the central part of the mask pattern. The pattern forming method according to item 1.
JP58147527A 1983-08-10 1983-08-10 Pattern formation Pending JPS6037734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147527A JPS6037734A (en) 1983-08-10 1983-08-10 Pattern formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147527A JPS6037734A (en) 1983-08-10 1983-08-10 Pattern formation

Publications (1)

Publication Number Publication Date
JPS6037734A true JPS6037734A (en) 1985-02-27

Family

ID=15432326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147527A Pending JPS6037734A (en) 1983-08-10 1983-08-10 Pattern formation

Country Status (1)

Country Link
JP (1) JPS6037734A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622536A (en) * 1985-06-28 1987-01-08 Nippon Telegr & Teleph Corp <Ntt> Mask for electron beam exposing device and manufacture thereof
JPS6264361A (en) * 1985-09-12 1987-03-23 鐘淵化学工業株式会社 Artificial blood vessel
JPH02213122A (en) * 1989-02-14 1990-08-24 Rohm Co Ltd Manufacture of resist pattern
US5004673A (en) * 1987-04-20 1991-04-02 Environmental Research Institute Of Michigan Method of manufacturing surface relief patterns of variable cross-sectional geometry
US6689160B1 (en) 1999-05-31 2004-02-10 Sumitomo Electric Industries, Ltd. Prosthesis for blood vessel
JP2007514201A (en) * 2003-12-12 2007-05-31 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． Method for forming a depression in the surface of a photoresist layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622536A (en) * 1985-06-28 1987-01-08 Nippon Telegr & Teleph Corp <Ntt> Mask for electron beam exposing device and manufacture thereof
JPS6264361A (en) * 1985-09-12 1987-03-23 鐘淵化学工業株式会社 Artificial blood vessel
JPH0471547B2 (en) * 1985-09-12 1992-11-16 Kanegafuchi Chemical Ind
US5004673A (en) * 1987-04-20 1991-04-02 Environmental Research Institute Of Michigan Method of manufacturing surface relief patterns of variable cross-sectional geometry
JPH02213122A (en) * 1989-02-14 1990-08-24 Rohm Co Ltd Manufacture of resist pattern
US6689160B1 (en) 1999-05-31 2004-02-10 Sumitomo Electric Industries, Ltd. Prosthesis for blood vessel
JP2007514201A (en) * 2003-12-12 2007-05-31 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． Method for forming a depression in the surface of a photoresist layer

Similar Documents

Publication Publication Date Title
JPH04136854A (en) Photomask and production thereof, formation of pattern by using this method and photomask blank
JPS6037734A (en) Pattern formation
JP4834235B2 (en) Photo mask for gray tone exposure
JPS62245251A (en) Resist pattern forming method
JPH06105678B2 (en) Method for manufacturing semiconductor device
JPS59155921A (en) Formation of resist pattern
JPH06105686B2 (en) Method for manufacturing semiconductor device
JPS58204532A (en) Formation of pattern
JPH03142466A (en) Production of semiconductor device and mask used for the production
JPS6386550A (en) Formation of multilayer interconnection layer
JP2000081696A (en) Phase shift mask and its production
JPS58101427A (en) Manufacture of semiconductor device
JPS6126221A (en) Manufacture of semiconductor device or the like
JPH0691066B2 (en) Method for forming photosensitive organic resin film
JPH0312452B2 (en)
JPS61156044A (en) Production of resist stencil mask
JPH07142531A (en) Transfer mask and resist pattern formation using it
JPS62173715A (en) Exposure method
JPH05347244A (en) Formation of resist pattern
JPS5984443A (en) Semiconductor device
JPS59231535A (en) Formation of pattern
JPS6136748A (en) Exposing mask
JPH0293461A (en) Pattern forming method
JPH0462166B2 (en)
JPS5830756A (en) Mask aligner