JPS6136748A - Exposing mask - Google Patents
Exposing maskInfo
- Publication number
- JPS6136748A JPS6136748A JP59159836A JP15983684A JPS6136748A JP S6136748 A JPS6136748 A JP S6136748A JP 59159836 A JP59159836 A JP 59159836A JP 15983684 A JP15983684 A JP 15983684A JP S6136748 A JPS6136748 A JP S6136748A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- metallic
- exposing
- light transmittivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/88—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by photographic processes for production of originals simulating relief
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体ICまたは薄膜IC等で使用する感光材
料の露光用マスクの構成に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a mask for exposing photosensitive materials used in semiconductor ICs, thin film ICs, and the like.
従来、この種の露光用マスクの構成は、屈折率の少ない
ガラス表面にクロム(Cr)または酸化鉄(Fed)な
どの金属膜また社金属酸化膜が、すべてのパターンに同
じ構成の膜で形成されている。Conventionally, this type of exposure mask has a structure in which a metal film such as chromium (Cr) or iron oxide (FED) or a metal oxide film is formed on a glass surface with a low refractive index, with the same structure for all patterns. has been done.
したがって、上記露光用iスフで露光する場合には透過
率が一定であるためパターン領域内で部分的Kg光材料
の感光度を変えることは不可能である。そこで、パター
ン領域内で部分的に透過率の異なった膜を形成すれば、
感光材料の感光度を部分的に変えることは可能となる。Therefore, when exposing with the exposure i-screen, the transmittance is constant, so it is impossible to partially change the photosensitivity of the Kg optical material within the pattern area. Therefore, if we form a film with partially different transmittance within the pattern area,
It becomes possible to partially change the photosensitivity of a photosensitive material.
このような露光用マスクを用いればパターンの側面ある
いはグイアホール(Via Ho1e)の側面などにテ
ーパが形成でき段差による断線不良が解消され得る。If such an exposure mask is used, a taper can be formed on the side surface of the pattern or the side surface of the via hole, and disconnection defects caused by steps can be eliminated.
本発明は透明なガラス表面に、予め定められた領域には
透過率の低い金属膜又は金属酸化・膜が形成され、前記
領域以外の予め定められた領域には前記金属膜又は金属
酸化膜とは異なった透過率を有する金属膜又は金属酸化
膜が形成されるような透過率の異なった2種以上の金属
膜あるいは金属酸化膜が混在してパターン化されている
ことを特徴とする。In the present invention, a metal film or metal oxide film with low transmittance is formed on a transparent glass surface in a predetermined area, and the metal film or metal oxide film is formed in a predetermined area other than the above area. is characterized in that two or more types of metal films or metal oxide films having different transmittances are mixed and patterned so that metal films or metal oxide films having different transmittances are formed.
次に本発明の露光用マスクの一実施例を図面を参照にし
て詳細に説明する。第1図と第3図は本発明のg光用マ
スクの一例が示されておシ、第2図と第4図はそれぞれ
第1図と第3図の露光用マスクを使用した場合の感光材
料の断面図を示す。Next, one embodiment of the exposure mask of the present invention will be described in detail with reference to the drawings. 1 and 3 show an example of the g-light mask of the present invention, and FIGS. 2 and 4 show the exposure when using the exposure masks of FIGS. 1 and 3, respectively. A cross-sectional view of the material is shown.
第1図を参照するとガラス板10片面に透過率の異なっ
た2種類の膜が形成されている。例えば2000Xの膜
厚を有する酸化鉄(Fed) 2と100OXのクロム
(Cr)膜の場合には、FeO3の方がCr膜よシ透過
率が3倍以上大きいため紫外線の波長、強度あるいは感
光材料の感度をコントロールすることでFed膜を透過
した光に↓シ感光材料をある程度感光させることが可能
となる。Referring to FIG. 1, two types of films with different transmittances are formed on one side of a glass plate 10. For example, in the case of iron oxide (Fed) 2 with a film thickness of 2000X and chromium (Cr) film with a film thickness of 100X, the transmittance of FeO3 is more than three times higher than that of the Cr film, so it is important to consider the wavelength, intensity, and photosensitive material of the ultraviolet rays. By controlling the sensitivity of the Fed film, it is possible to expose the photosensitive material to some extent to the light that has passed through the Fed film.
第2図には第1図で説明した露光用マスクを使用し九場
合の感光材料の断面図を示す。第2図を参照すると、基
板4表面にデポジットされた金属薄膜4の表面のネガク
イズ感光材料のうち領域8では紫外線が透過率の低いク
ロム(C「)膜でほとんどしゃ断され1いるため光硬化
されない。また領域7では比較的透過率の高い酸化鉄(
Fed)膜のため紫外線の一部が透過し不完全な光硬化
状態におる。よって次工程の現像後には硬化されない部
分の感光材料は完全に除去され、不完全な光硬化した領
域の感光材料線一部除去される。したがって、第2図の
断面図に示す様々形状にパターン化される。この実施例
では形成が2段にな9、急激な1段の場合より段差によ
る断線不良が起こシにくくなる。FIG. 2 shows a cross-sectional view of a photosensitive material when the exposure mask described in FIG. 1 is used. Referring to FIG. 2, in the area 8 of the negative photosensitive material on the surface of the metal thin film 4 deposited on the surface of the substrate 4, ultraviolet rays are mostly blocked by the chromium (C'') film with low transmittance, so it is not photocured. In addition, in region 7, iron oxide (
Fed) film allows some of the ultraviolet rays to pass through, resulting in incomplete photocuring. Therefore, after the next step of development, the uncured portions of the photosensitive material are completely removed, and the photosensitive material lines in the incompletely photocured areas are partially removed. Therefore, it is patterned into various shapes as shown in the cross-sectional view of FIG. In this embodiment, the wire is formed in two steps9, which makes it less likely that a wire breakage will occur due to a step difference than in the case of one abrupt step.
第3図および第4図には透過率の異なった311類の膜
による3段の場合の一例が示しである。FIGS. 3 and 4 show an example of a three-stage case using type 311 membranes having different transmittances.
本発明には、jl用マスク表面に2種以上の透過率の異
なった金属膜あるいは金属酸化膜でパターン化すること
で部分的に感光材料の感光度をコントロールすることが
でき、ヴイアホール形成の場合にはパターンエツジをな
だらかにし、段差による断線不良が解消されるという効
果がある。In the present invention, the photosensitivity of the photosensitive material can be partially controlled by patterning the surface of the jl mask with two or more types of metal films or metal oxide films with different transmittances. This has the effect of smoothing the pattern edges and eliminating disconnection defects caused by steps.
第1固〜第4
の断面図である。
図において、1および11 透明ガラス、2および12
・・比較的透過率の大きい金属膜あるいは金属酸化膜、
3および14・・・透過率の小さい金属FIXあるいは
金属酸化膜、4および15・・基板、5および16・・
・金属薄膜、6および17・・・感光材料(ネガタイプ
)、8および20・・完全に除去された部分、7および
18・・・一部除去された部分。It is 1st - 4th sectional drawing. In the figure, 1 and 11 transparent glass, 2 and 12
・・Metal film or metal oxide film with relatively high transmittance,
3 and 14...Metal FIX or metal oxide film with low transmittance, 4 and 15...Substrate, 5 and 16...
- Metal thin film, 6 and 17... Photosensitive material (negative type), 8 and 20... completely removed part, 7 and 18... partially removed part.
Claims (1)
れた第1の領域に設けられ光の透過率の低い第1の金属
膜または第1の金属酸化膜と、前記ガラス表面の前記第
1の領域以外の予め定められた第2の領域に設けられ前
記第1の金属膜または第1の金属酸化膜より透過率の高
い第2の金属膜または第2の金属酸化膜とから構成した
ことを特徴とする露光用マスク。an optically transparent glass; a first metal film or a first metal oxide film with low light transmittance provided in a predetermined first region on the glass surface; and the first metal oxide film on the glass surface. A second metal film or a second metal oxide film provided in a predetermined second region other than the region and having a higher transmittance than the first metal film or first metal oxide film. An exposure mask featuring:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59159836A JPS6136748A (en) | 1984-07-30 | 1984-07-30 | Exposing mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59159836A JPS6136748A (en) | 1984-07-30 | 1984-07-30 | Exposing mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6136748A true JPS6136748A (en) | 1986-02-21 |
Family
ID=15702303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59159836A Pending JPS6136748A (en) | 1984-07-30 | 1984-07-30 | Exposing mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6136748A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4920828A (en) * | 1988-02-08 | 1990-05-01 | Mazda Motor Corporation | Planetary gear type transmission |
KR100697366B1 (en) * | 2000-06-29 | 2007-03-20 | 비오이 하이디스 테크놀로지 주식회사 | Half tone mask employing in tft-lcd manufacture process |
-
1984
- 1984-07-30 JP JP59159836A patent/JPS6136748A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4920828A (en) * | 1988-02-08 | 1990-05-01 | Mazda Motor Corporation | Planetary gear type transmission |
KR100697366B1 (en) * | 2000-06-29 | 2007-03-20 | 비오이 하이디스 테크놀로지 주식회사 | Half tone mask employing in tft-lcd manufacture process |
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