JPS6136748A - Exposing mask - Google Patents

Exposing mask

Info

Publication number
JPS6136748A
JPS6136748A JP59159836A JP15983684A JPS6136748A JP S6136748 A JPS6136748 A JP S6136748A JP 59159836 A JP59159836 A JP 59159836A JP 15983684 A JP15983684 A JP 15983684A JP S6136748 A JPS6136748 A JP S6136748A
Authority
JP
Japan
Prior art keywords
film
region
metallic
exposing
light transmittivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59159836A
Other languages
Japanese (ja)
Inventor
Hikari Kimura
光 木村
Takeshi Kiyono
健 清野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59159836A priority Critical patent/JPS6136748A/en
Publication of JPS6136748A publication Critical patent/JPS6136748A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/88—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by photographic processes for production of originals simulating relief

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To obtain an exposing mask suitable for manufacture of a thin film IC, etc. by providing a metallic (oxide) film having low light transmittivity in the prescribed 1st region of a transparent glass surface and a metallic (oxide) film having the light transmittivity higher than the light transmittivity of the metallic (oxide) film of the 1st region in the prescribed 2nd region. CONSTITUTION:An exposing mask formed with the metallic oxide film 2 of FeO, etc. having the large light transmittivity on one surface of a glass plate 1 and formed with the metallic film 3 of Cr, etc. having the light transmittivity of <=1/3 the light transmittivity of FeO in another region is manufactured. The negative type photosensitive material on the thin metallic film 5 formed on the substrate 4 is exposed by using such mask. The exposing region 8 corresponding to the film 3 having the small UV transmittivity is not photoset and the exposing region 7 corresponding to the film 2 is in an imperfectly set state. The region 6 corresponding to the films 2, 3 is perfectly set. The region 8 is thus thoroughly removed, the region 7 is partly removed and the region 6 remains without being removed in a developing stage. The generation of a sharp step in the regist pattern formed in such a manner is obviated and the generation of a disconnection defect is prevented.

Description

【発明の詳細な説明】 本発明は半導体ＩＣまたは薄膜ＩＣ等で使用する感光材
料の露光用マスクの構成に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a mask for exposing photosensitive materials used in semiconductor ICs, thin film ICs, and the like.

従来、この種の露光用マスクの構成は、屈折率の少ない
ガラス表面にクロム（Ｃｒ）または酸化鉄（Ｆｅｄ）な
どの金属膜また社金属酸化膜が、すべてのパターンに同
じ構成の膜で形成されている。Conventionally, this type of exposure mask has a structure in which a metal film such as chromium (Cr) or iron oxide (FED) or a metal oxide film is formed on a glass surface with a low refractive index, with the same structure for all patterns. has been done.

したがって、上記露光用ｉスフで露光する場合には透過
率が一定であるためパターン領域内で部分的Ｋｇ光材料
の感光度を変えることは不可能である。そこで、パター
ン領域内で部分的に透過率の異なった膜を形成すれば、
感光材料の感光度を部分的に変えることは可能となる。Therefore, when exposing with the exposure i-screen, the transmittance is constant, so it is impossible to partially change the photosensitivity of the Kg optical material within the pattern area. Therefore, if we form a film with partially different transmittance within the pattern area,
It becomes possible to partially change the photosensitivity of a photosensitive material.

このような露光用マスクを用いればパターンの側面ある
いはグイアホール（Ｖｉａ　Ｈｏ１ｅ）の側面などにテ
ーパが形成でき段差による断線不良が解消され得る。If such an exposure mask is used, a taper can be formed on the side surface of the pattern or the side surface of the via hole, and disconnection defects caused by steps can be eliminated.

本発明は透明なガラス表面に、予め定められた領域には
透過率の低い金属膜又は金属酸化・膜が形成され、前記
領域以外の予め定められた領域には前記金属膜又は金属
酸化膜とは異なった透過率を有する金属膜又は金属酸化
膜が形成されるような透過率の異なった２種以上の金属
膜あるいは金属酸化膜が混在してパターン化されている
ことを特徴とする。In the present invention, a metal film or metal oxide film with low transmittance is formed on a transparent glass surface in a predetermined area, and the metal film or metal oxide film is formed in a predetermined area other than the above area. is characterized in that two or more types of metal films or metal oxide films having different transmittances are mixed and patterned so that metal films or metal oxide films having different transmittances are formed.

次に本発明の露光用マスクの一実施例を図面を参照にし
て詳細に説明する。第１図と第３図は本発明のｇ光用マ
スクの一例が示されておシ、第２図と第４図はそれぞれ
第１図と第３図の露光用マスクを使用した場合の感光材
料の断面図を示す。Next, one embodiment of the exposure mask of the present invention will be described in detail with reference to the drawings. 1 and 3 show an example of the g-light mask of the present invention, and FIGS. 2 and 4 show the exposure when using the exposure masks of FIGS. 1 and 3, respectively. A cross-sectional view of the material is shown.

第１図を参照するとガラス板１０片面に透過率の異なっ
た２種類の膜が形成されている。例えば２０００Ｘの膜
厚を有する酸化鉄（Ｆｅｄ）　２と１００ＯＸのクロム
（Ｃｒ）膜の場合には、ＦｅＯ３の方がＣｒ膜よシ透過
率が３倍以上大きいため紫外線の波長、強度あるいは感
光材料の感度をコントロールすることでＦｅｄ膜を透過
した光に↓シ感光材料をある程度感光させることが可能
となる。Referring to FIG. 1, two types of films with different transmittances are formed on one side of a glass plate 10. For example, in the case of iron oxide (Fed) 2 with a film thickness of 2000X and chromium (Cr) film with a film thickness of 100X, the transmittance of FeO3 is more than three times higher than that of the Cr film, so it is important to consider the wavelength, intensity, and photosensitive material of the ultraviolet rays. By controlling the sensitivity of the Fed film, it is possible to expose the photosensitive material to some extent to the light that has passed through the Fed film.

第２図には第１図で説明した露光用マスクを使用し九場
合の感光材料の断面図を示す。第２図を参照すると、基
板４表面にデポジットされた金属薄膜４の表面のネガク
イズ感光材料のうち領域８では紫外線が透過率の低いク
ロム（Ｃ「）膜でほとんどしゃ断され１いるため光硬化
されない。また領域７では比較的透過率の高い酸化鉄（
Ｆｅｄ）膜のため紫外線の一部が透過し不完全な光硬化
状態におる。よって次工程の現像後には硬化されない部
分の感光材料は完全に除去され、不完全な光硬化した領
域の感光材料線一部除去される。したがって、第２図の
断面図に示す様々形状にパターン化される。この実施例
では形成が２段にな９、急激な１段の場合より段差によ
る断線不良が起こシにくくなる。FIG. 2 shows a cross-sectional view of a photosensitive material when the exposure mask described in FIG. 1 is used. Referring to FIG. 2, in the area 8 of the negative photosensitive material on the surface of the metal thin film 4 deposited on the surface of the substrate 4, ultraviolet rays are mostly blocked by the chromium (C'') film with low transmittance, so it is not photocured. In addition, in region 7, iron oxide (
Fed) film allows some of the ultraviolet rays to pass through, resulting in incomplete photocuring. Therefore, after the next step of development, the uncured portions of the photosensitive material are completely removed, and the photosensitive material lines in the incompletely photocured areas are partially removed. Therefore, it is patterned into various shapes as shown in the cross-sectional view of FIG. In this embodiment, the wire is formed in two steps9, which makes it less likely that a wire breakage will occur due to a step difference than in the case of one abrupt step.

第３図および第４図には透過率の異なった３１１類の膜
による３段の場合の一例が示しである。FIGS. 3 and 4 show an example of a three-stage case using type 311 membranes having different transmittances.

本発明には、ｊｌ用マスク表面に２種以上の透過率の異
なった金属膜あるいは金属酸化膜でパターン化すること
で部分的に感光材料の感光度をコントロールすることが
でき、ヴイアホール形成の場合にはパターンエツジをな
だらかにし、段差による断線不良が解消されるという効
果がある。In the present invention, the photosensitivity of the photosensitive material can be partially controlled by patterning the surface of the jl mask with two or more types of metal films or metal oxide films with different transmittances. This has the effect of smoothing the pattern edges and eliminating disconnection defects caused by steps.

【図面の簡単な説明】[Brief explanation of drawings]

第１固〜第４ の断面図である。 図において、１および１１　透明ガラス、２および１２
・・比較的透過率の大きい金属膜あるいは金属酸化膜、
３および１４・・・透過率の小さい金属ＦＩＸあるいは
金属酸化膜、４および１５・・基板、５および１６・・
・金属薄膜、６および１７・・・感光材料（ネガタイプ
）、８および２０・・完全に除去された部分、７および
１８・・・一部除去された部分。It is 1st - 4th sectional drawing. In the figure, 1 and 11 transparent glass, 2 and 12
・・Metal film or metal oxide film with relatively high transmittance,
3 and 14...Metal FIX or metal oxide film with low transmittance, 4 and 15...Substrate, 5 and 16...
- Metal thin film, 6 and 17... Photosensitive material (negative type), 8 and 20... completely removed part, 7 and 18... partially removed part.

Claims (1)

【特許請求の範囲】[Claims] 　光学的に透明なガラスと、該ガラス表面の予め定めら
れた第１の領域に設けられ光の透過率の低い第１の金属
膜または第１の金属酸化膜と、前記ガラス表面の前記第
１の領域以外の予め定められた第２の領域に設けられ前
記第１の金属膜または第１の金属酸化膜より透過率の高
い第２の金属膜または第２の金属酸化膜とから構成した
ことを特徴とする露光用マスク。an optically transparent glass; a first metal film or a first metal oxide film with low light transmittance provided in a predetermined first region on the glass surface; and the first metal oxide film on the glass surface. A second metal film or a second metal oxide film provided in a predetermined second region other than the region and having a higher transmittance than the first metal film or first metal oxide film. An exposure mask featuring:
JP59159836A 1984-07-30 1984-07-30 Exposing mask Pending JPS6136748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59159836A JPS6136748A (en) 1984-07-30 1984-07-30 Exposing mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59159836A JPS6136748A (en) 1984-07-30 1984-07-30 Exposing mask

Publications (1)

Publication Number Publication Date
JPS6136748A true JPS6136748A (en) 1986-02-21

Family

ID=15702303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59159836A Pending JPS6136748A (en) 1984-07-30 1984-07-30 Exposing mask

Country Status (1)

Country Link
JP (1) JPS6136748A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920828A (en) * 1988-02-08 1990-05-01 Mazda Motor Corporation Planetary gear type transmission
KR100697366B1 (en) * 2000-06-29 2007-03-20 비오이 하이디스 테크놀로지 주식회사 Half tone mask employing in tft-lcd manufacture process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920828A (en) * 1988-02-08 1990-05-01 Mazda Motor Corporation Planetary gear type transmission
KR100697366B1 (en) * 2000-06-29 2007-03-20 비오이 하이디스 테크놀로지 주식회사 Half tone mask employing in tft-lcd manufacture process

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