JPS60262962A - Manufacture of electrically conductive tin oxide film - Google Patents
Manufacture of electrically conductive tin oxide filmInfo
- Publication number
- JPS60262962A JPS60262962A JP11754184A JP11754184A JPS60262962A JP S60262962 A JPS60262962 A JP S60262962A JP 11754184 A JP11754184 A JP 11754184A JP 11754184 A JP11754184 A JP 11754184A JP S60262962 A JPS60262962 A JP S60262962A
- Authority
- JP
- Japan
- Prior art keywords
- tin oxide
- substrate
- tin
- oxide film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野Ｊ
本発明は太陽電池、液晶表示パネル等に用いられる酸化
スズ導電膜の作製方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION INDUSTRIAL APPLICATION J Field of the Invention The present invention relates to a method for producing a tin oxide conductive film used in solar cells, liquid crystal display panels, etc.
「従来の技術」
透明導電膜にはＡｕ等の金属薄物を用いるものと、Ｓ
ｎ ０２、Ｉ ｎ、５等の金属酸化物を用いるものとが
ある。金属薄膜はその高い導電性の為低抵抗の膜を作り
やすい反面、可視域での吸収が大きい為高透過率が得に
くく、かつ膜の強度が劣るという欠点をもっている、一
方金属酸化物は適度の導電性と高透過率そのうえ優れた
膜強度をもっているので幅広く応用されている。``Prior art'' There are two types of transparent conductive films, one using thin metal such as Au, and the other using S.
Some use metal oxides such as n 02, I n, 5, etc. Metal thin films have high conductivity, making it easy to create low-resistance films, but they have the disadvantage of being difficult to obtain high transmittance due to large absorption in the visible range, and having poor film strength.Metal oxides, on the other hand, It has a wide range of applications because of its conductivity, high transmittance, and excellent film strength.
現在一般に知られている金属酸化物はネサ膜と呼ばれる
Ｓ ｎ Ｏ，［ｌｊｉ、Ｉ ｎ、ｏ、ｍ、ｒｒｏｌｌｌ
等でこｈらのうちＩ ｎ、ｏ、ＩｌｌとＩＴＯ膜は比抵
抗が１００国程５ｎａｉｌが１０Ω値程の膜質の物が得
られている。The currently generally known metal oxide is S n O, [lji, I n, o, m, rrolll, which is called the Nesa film.
Among them, ITO films with resistivities of about 100 Ω have been obtained for 5 nails in about 100 countries.
「発明が解決しようとする問題点」
これらのうちｓ ｎ ｏ、ｍは古くからスプレー法、Ｃ
ＶＤ法、真空蒸着法等により作製されていたが、比抵抗
が１０Ω１が限度で低い抵抗のものが得られないという
欠点があった。``Problems to be solved by the invention'' Among these, s no, m has been used since ancient times by the spray method, C
Although they have been produced by the VD method, vacuum evaporation method, etc., they have the drawback that the resistivity is limited to 10Ω1, making it impossible to obtain a low resistance product.
これを解決するためにスプレー法やＣＶＤ法において原
料溶液または原料ガス中にフッ素を含む物質（例えばＮ
Ｈ４Ｆ、ＣＦ４）を添加してフン素人の５ｎａｙ４が作
製されたがこれらの方法では基板を４００〜５００℃と
いう高温にしなければならずかかる温度では基板が変形
してしまうという欠点があった。To solve this problem, substances containing fluorine (for example, N
H4F, CF4) were added to produce 5nay4, but these methods had the disadvantage that the substrate had to be heated to a high temperature of 400 to 500 DEG C., and the substrate was deformed at such a temperature.
さらにフッ素を添加するために膜作製に必要のない元素
（例えばＮ、Ｃ，Ｈ）が眼中に入ってしまい良好な膜質
の酸化スズ導電膜が得られなかったさらに、真空蒸着法
によってフン素人の酸化スズ導電膜を形成しようとした
場合フッ素、スズフッ化物とスズ、スズ酸化物との蒸気
圧の違いによって膜中に均一にフッ素を導入することは
できなかった。Furthermore, due to the addition of fluorine, elements not necessary for film fabrication (e.g. N, C, H) entered the eye, making it impossible to obtain a tin oxide conductive film of good film quality. When attempting to form a tin oxide conductive film, it was not possible to uniformly introduce fluorine into the film due to the difference in vapor pressure between fluorine/tin fluoride and tin/tin oxide.
「問題を解決するための手段ｊ
本発明は上記の問題を解決するものでありフッ素元素又
はスズフッ化物を含むスズ合金又はスズ酸化物を出発材
料として、スパッタリング法により基板上に形成するこ
とを特徴とするものであり本発明により作製された酸化
スズ導電膜中には不純物としてフッ素元素を含み加熱す
る必要なく低抵抗の酸化スズ導電膜が得られるものであ
る。Means for Solving the Problems The present invention solves the above problems, and is characterized in that it is formed on a substrate by sputtering using a tin alloy or tin oxide containing fluorine element or tin fluoride as a starting material. The tin oxide conductive film produced according to the present invention contains fluorine element as an impurity, and a low resistance tin oxide conductive film can be obtained without the need for heating.
「作用」
フッ素元素をふくむ酸化スズ導電膜中において一部の酸
素とフッ素が置換されてドナーレベルを形成する為導電
性は向上するものと考えられる。"Operation" It is thought that conductivity is improved because some oxygen and fluorine are substituted in the tin oxide conductive film containing the fluorine element to form a donor level.
以下に実施例により本発明を説明する。The present invention will be explained below with reference to Examples.
「実施例１ｊ
基板としては厚さ２ｆｌのガラス基板を用いて、ＤＣス
パッタリング法によりフッ化第１スズをふくむ酸化スズ
をターゲットとして酸化スズ導電膜を作製した。以下に
その作製条件をしめす。Example 1j Using a glass substrate with a thickness of 2 fl as the substrate, a tin oxide conductive film was produced by DC sputtering using tin oxide containing stannous fluoride as a target.The production conditions are shown below.
・ターゲット Ｓ ｎ Ｆ ２ ５．Ｏｗｔ ％Ｓ ｎ
Ｏ２９５，０！１ｔ％
・ガス アルゴン １００％
・圧力 ３ ｘ １０Ｔｏｒｒ
・基板加熱 なし
得られた膜の物性は次の通りであった。・Target S n F 2 5. Owt %S n
O295,0!1t% - Gas argon 100% - Pressure 3 x 10 Torr - Substrate heating None The physical properties of the obtained film were as follows.
・膜厚 １０００人
−に
・比抵抗 １ｘ１０Ω口
・透過率 ８５ ％
「実施例２」
基板として厚さ１００μｍのプラスチックフィルムを用
いてＤＣスパッタリング法によりフッ素元素を含むスズ
合金をターゲットとして酸化スズ導電膜を作製した。以
下にその作製条件をしめす。- Film thickness: 1,000 people - Specific resistance: 1 x 10Ω - Transmittance: 85% "Example 2" Using a 100 μm thick plastic film as a substrate, a tin oxide conductive film was formed by DC sputtering using a tin alloy containing fluorine as a target. was created. The manufacturing conditions are shown below.
・ターゲット フッ素 ５．０ｗｔ％ スズ ９５．０ｗｔ％ ・ガス アルゴン、酸素 ・圧力 ３ ｘ １０Ｔｏｒｒ ・酸素分圧 ４ Ｘ １０Ｔｏｒｒ ・基板加熱 なし 得られたまくの物性は次の通りであった。・Target fluorine 5.0wt% Tin 95.0wt% ・Gas Argon, Oxygen ・Pressure 3 x 10 Torr ・Oxygen partial pressure 4 x 10 Torr ・No substrate heating The physical properties of the obtained pillow were as follows.
・１臭厚 １０００人
・比抵抗 ５ｘ１０ΩＣ
・透過率 ８５ ％
第１図に比抵抗値とターゲット中のフン素含有量の関係
をしめす。・1 odor thickness 1000 people ・Resistivity 5x10ΩC ・Transmittance 85% Figure 1 shows the relationship between the specific resistance value and the fluorine content in the target.
「効果ｊ
本発明は上記の問題を解決するものであり２Ｑｗ ｔ％
以下の濃度のフッ素元素又はスズフッ化物を含むスズ合
金又はスズ酸化物を出発材料として、スパッタリング法
により基板上に形成することを特徴とするものであり本
発明により作製された酸化スズ導電膜は特にターゲット
中のフッ素の量が２０ｓｔ％以下であれば、従来のもの
より約１桁以上低い比抵抗を簡単に得ることができるよ
うになった。"Effect j The present invention solves the above problem and has 2Qw t%
The tin oxide conductive film produced by the present invention is characterized in that it is formed on a substrate by a sputtering method using a tin alloy or tin oxide containing fluorine element or tin fluoride at the following concentrations as a starting material. If the amount of fluorine in the target is 20st% or less, it has become possible to easily obtain a resistivity that is about one order of magnitude lower than that of the conventional method.
また従来のフッ素人酸化スズ導電膜を作製するのに用い
られたスプレー法、ＣＶＤ法、真空蒸着法は、基板加熱
を必要としていたため基板の変形、基板からの不純物の
熱拡散等の問題があったが本発明は基板加熱を必要とし
ないためそれらの問題は全くおこらない、また原料中に
はＳｎ、０、Ｆ′のみを含むので、ターゲットの純度を
良くするだけで簡単に膜中の不純物を極力少なくするこ
とができる。In addition, the spray method, CVD method, and vacuum evaporation method used to fabricate conventional fluorinated tin oxide conductive films require heating of the substrate, resulting in problems such as deformation of the substrate and thermal diffusion of impurities from the substrate. However, since the present invention does not require substrate heating, these problems do not occur at all, and since the raw materials contain only Sn, 0, and F', it is easy to improve the purity of the target. Impurities can be reduced as much as possible.
さらに加熱する必要がないためプラスチックフィルム等
の耐熱性の低い基板のうえ等にもフン素人の酸化スズ導
電膜を形成することかできるという大きな特徴を有する
。Furthermore, since there is no need for heating, a significant feature is that a tin oxide conductive film can be formed even on substrates with low heat resistance such as plastic films.
第１図は比抵抗値とターケント中のフッ素含有量の関係
をしめす。
特許出願人
０ ２０
ｑ−ｒ’：、ド゛中０２ツ素ｔ （％）繁１図Figure 1 shows the relationship between specific resistance value and fluorine content in Tarquent. Patent applicant 0 20 q-r':, 02 elements in 0 (%) Frequency 1 figure
Claims (1)
化物を含むスズ合金又はスズ酸化物を出発材料として、
スパッタリング法により基板上に形成することを特徴と
した酸化スズ導電膜の作製方法 ２、特許請求の範囲第１項において前記スズフッ化物と
してはフン化第１スズ（Ｓ ｎ ＦＺ）又はフン化第２
スズ（Ｓ ｎ ％）であることを特徴とした酸化スズ導
電膜の作製方法 ３、特許請求の範囲第１項において前記基板としてはガ
ラス、セラミック、金属、またはフィルム等の可曲性基
板であることを特徴とした酸化スズ導電膜の作製方法[Claims] 1. Using a tin alloy or tin oxide containing elemental fluorine or tin fluoride at a concentration of 20 wt% or less as a starting material,
A method 2 for producing a tin oxide conductive film, characterized in that it is formed on a substrate by a sputtering method, wherein the tin fluoride is stannous fluoride (S n FZ) or difluoride.
A third method for producing a tin oxide conductive film characterized in that the film is made of tin (S n %), and in claim 1, the substrate is a flexible substrate such as glass, ceramic, metal, or film. A method for producing a tin oxide conductive film characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11754184A JPS60262962A (en) | 1984-06-08 | 1984-06-08 | Manufacture of electrically conductive tin oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11754184A JPS60262962A (en) | 1984-06-08 | 1984-06-08 | Manufacture of electrically conductive tin oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60262962A true JPS60262962A (en) | 1985-12-26 |
| JPH0323627B2 JPH0323627B2 (en) | 1991-03-29 |
Family
ID=14714347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11754184A Granted JPS60262962A (en) | 1984-06-08 | 1984-06-08 | Manufacture of electrically conductive tin oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60262962A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839348A (en) * | 2012-09-27 | 2012-12-26 | 攀枝花学院 | Method for preparing fluorine-doped tin oxide thin film |
-
1984
- 1984-06-08 JP JP11754184A patent/JPS60262962A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839348A (en) * | 2012-09-27 | 2012-12-26 | 攀枝花学院 | Method for preparing fluorine-doped tin oxide thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0323627B2 (en) | 1991-03-29 |
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