JPS62190612A - Manufacture of zinc oxide conductive film - Google Patents
Manufacture of zinc oxide conductive filmInfo
- Publication number
- JPS62190612A JPS62190612A JP3236886A JP3236886A JPS62190612A JP S62190612 A JPS62190612 A JP S62190612A JP 3236886 A JP3236886 A JP 3236886A JP 3236886 A JP3236886 A JP 3236886A JP S62190612 A JPS62190612 A JP S62190612A
- Authority
- JP
- Japan
- Prior art keywords
- film
- zinc oxide
- conductive film
- oxide conductive
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 35
- 239000011787 zinc oxide Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 29
- 238000002834 transmittance Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、太陽電池、液晶表示パネル、その他、産業上
巾広く用いられている透光性導電膜のうち酸化亜鉛導電
膜の作製方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a zinc oxide conductive film among light-transmitting conductive films widely used in solar cells, liquid crystal display panels, and other industries.
従来の透明導電膜にはＡｕ等の金属薄物を用いるものと
、ＳｎＯ□、ＩｎｚＯｔ等の金属酸化物を用いるものと
がある。金属薄膜はその高い導電性の為、低抵抗の膜を
作りやすい反面、可視域での吸収が大きい為、高透過率
が得に＜＜、かつ膜の強度が劣るという欠点をもってい
る。一方金属酸化物は適度の導電性と高透過率そのうえ
優れた膜強度をもっているので幅広く応用されている。Conventional transparent conductive films include those using thin metals such as Au, and those using metal oxides such as SnO□ and InzOt. Metal thin films have high conductivity, making it easy to create films with low resistance; however, they have the drawback of high absorption in the visible range, resulting in high transmittance and poor film strength. On the other hand, metal oxides have appropriate conductivity, high transmittance, and excellent film strength, so they are widely used.
現在、一般に知られている金属酸化物はネサ膜と呼ばれ
るＳｎ０ｇ膜、１ｎｚＯ＋膜、ＩＴＯ膜等でこれらのう
ちＩｎ２Ｏ２膜とＩＴＯ膜は比抵抗が１０〜４Ωｃｍ程
、ＳｎＯ□膜が１０−’Ωｃｍ程の膜質の物が得られて
いる。Currently, generally known metal oxides include Sn0g film called Nesa film, 1nzO+ film, and ITO film. Among these, In2O2 film and ITO film have a resistivity of about 10 to 4 Ωcm, and SnO□ film has a resistivity of 10-'Ωcm. A material with a film quality of about 100% was obtained.
さらに最近、酸化亜鉛膜ＺｎＯがＩＴＯ膜と同程度の光
透過性を有し、原材料が安価であるために注目されてい
る。Furthermore, recently, a zinc oxide film, ZnO, has attracted attention because it has a light transmittance comparable to that of an ITO film and its raw materials are inexpensive.
しかしながら、公知のスパッタ法などで作製されたＺｎ
Ｏ膜はその比抵抗が、１０−２（９ｃｍ ）程度しか得
られず実用にはあまり向いていなかった。However, Zn produced by known sputtering method etc.
The O film had a specific resistance of only about 10-2 (9 cm2) and was not very suitable for practical use.
本発明は、この問題を解決するものであり、従来の製造
装置をそのまま利用してより低抵抗なＺｎＯ膜を作製す
る方法に関するものである。The present invention solves this problem and relates to a method for producing a ZnO film with lower resistance using conventional production equipment as is.
この問題を解決するために、従来は酸化物被膜を作製す
る際に不必要または悪影響を及ぼすと考えられていた還
元性気体である水素を少量添加して酸化物被膜を形成す
ることを特徴とするものである。In order to solve this problem, the oxide film is formed by adding a small amount of hydrogen, which is a reducing gas that was conventionally thought to be unnecessary or have a negative effect when creating an oxide film. It is something to do.
以下に実施例により本発明を説明する
実施例
本実施例では従来より公知のアゲネトロンスパッタリン
グ装置を用いて行った。６インチのＺｎ０（９９，９χ
）焼結体ターゲットを用い基板とターゲットの間隔は９
０鶴であり、不活性ガスとしてＡｒを用いスパッタリン
グガス圧は１．２Ｐａ、印加電力３００Ｗで一定とし添
加する水素量及び膜形成温度条件を種々変えてＺｎＯ導
電膜を作製した。その結果を表１に示す。EXAMPLES The present invention will now be explained with reference to examples. In this example, a conventionally known agenetron sputtering apparatus was used. 6 inch Zn0 (99,9χ
) Using a sintered target, the distance between the substrate and target is 9
A ZnO conductive film was prepared by using Ar as an inert gas, keeping the sputtering gas pressure constant at 1.2 Pa, and the applied power at 300 W, and varying the amount of hydrogen added and the film forming temperature conditions. The results are shown in Table 1.
表１
また比較の為に各温度において水素を添加しないで、Ｚ
ｎＯ膜を作製した。その結果を表２に示す。Table 1 For comparison, Z
An nO film was produced. The results are shown in Table 2.
表２
尚、表１表２の基板温度の欄において加熱せずと表示が
ある時の実際の基板温度は、スパッタリング時の輻射熱
の為若干の違いがあり３０℃〜５０℃の範囲で一定であ
った
これらの実施例及び比較例より明らかなようにＺｎＯ膜
を作製する際に水素を少量添加すると、その比抵抗は最
大で２ケタ以上改善されることが判明した。また水素を
添加すると、基板温度を下げてゆくにしたがい、ＺｎＯ
膜の抵抗値が下がってくることが判明した。これは水素
を添加しない場合の現象と全く逆である。Table 2 In addition, in the substrate temperature column of Table 1 and Table 2, the actual substrate temperature when it is indicated that it is not heated is constant within the range of 30°C to 50°C, although there may be slight differences due to radiant heat during sputtering. As is clear from these Examples and Comparative Examples, it has been found that when a small amount of hydrogen is added when producing a ZnO film, the specific resistance can be improved by two orders of magnitude or more at most. Furthermore, when hydrogen is added, as the substrate temperature is lowered, ZnO
It was found that the resistance value of the membrane decreased. This is completely opposite to the phenomenon when no hydrogen is added.
また、これらのＺｎＯ膜の光の透過率の代表的な値を表
３に示す。Further, Table 3 shows typical values of the light transmittance of these ZnO films.
表３
（膜厚はすべて３０００人）
このように透過率は水素の添加の有無、温度の差にかか
わらず、はぼ一定で良好な透過性を示した。Table 3 (All film thicknesses were 3,000 people) As described above, the transmittance was almost constant regardless of whether hydrogen was added or not, and regardless of the temperature difference, indicating good permeability.
図１に表１の結果をまとめて示す曲線（１） （２）
（３）（４）は各々０°Ｃ１加熱せず１００°Ｃ，１５
０℃の基板温度に対応する。これより明らかなように、
水素分圧比で１．５〜２．５χ付近が最も低抵抗を示し
ている。また０℃においては、水素分圧比１０χでも１
０−’（０ｃｍ）台の比抵抗値であり、基板加熱せずと
０℃では０．０５χでも同様に１０−’（０ｃｍ）台の
比抵抗を有していた。Figure 1 shows the curves (1) (2) that summarize the results in Table 1.
(3) and (4) are respectively 0°C100°C without heating, 15
Corresponds to a substrate temperature of 0°C. As is clearer from this,
The lowest resistance is shown around a hydrogen partial pressure ratio of 1.5 to 2.5χ. Furthermore, at 0°C, even with a hydrogen partial pressure ratio of 10χ, 1
The resistivity value was on the order of 0-' (0 cm), and even at 0.05χ at 0° C. without heating the substrate, the resistivity was on the order of 10-' (0 cm).
このように、従来の装置を使用し、還元性気体である水
素を少量添加することにより、より低抵抗なＺｎＯ膜を
形成することができる。In this way, by using a conventional device and adding a small amount of hydrogen, which is a reducing gas, it is possible to form a ZnO film with lower resistance.
さらに、この時基板温度を室温以下に保持し、ＺｎＯ膜
を形成することは、非常に有効であった。Furthermore, it was very effective to maintain the substrate temperature below room temperature and form the ZnO film at this time.
本実施例では、ＺｎＯのターゲ・７トを用いＡｒガス中
に水素を添加したが、Ｚｎターゲットを用いＡｒガスと
０２ガスによる反応性スパッタリング時に水素を添加し
ても同様である。In this example, hydrogen was added to Ar gas using a ZnO target, but the same effect can be obtained by adding hydrogen during reactive sputtering using Ar gas and O2 gas using a Zn target.
また、スパッタリングターゲット中にＡＩまたはＡｈａ
３を１〜５ｗ Ｌ２程度混入しても同様の結果が得られ
る。Also, AI or Aha in the sputtering target
Similar results can be obtained even if approximately 1 to 5w L2 of 3 is mixed.
第１図は、ＺｎＯ膜の比抵抗と作製時の水素分圧比の関
係を示す。FIG. 1 shows the relationship between the resistivity of the ZnO film and the hydrogen partial pressure ratio during fabrication.
Claims (1)
ターゲットにより酸化亜鉛導電膜をスパッタリングさせ
て所定の基板に酸化亜鉛導電膜を作製する方法において
、スパッタリング用気体に水素が添加されていることを
特徴とする酸化亜鉛導電膜の作製方法 ２、特許請求の範囲第１項において、前記水素は分圧比
１０．０％以下の割合で添加されたことを特徴とする酸
化亜鉛導電膜の作製方法[Claims] 1. In a method of sputtering a zinc oxide conductive film using a sputtering target containing zinc or zinc oxide as a main component to produce a zinc oxide conductive film on a predetermined substrate, hydrogen is added to the sputtering gas. A method 2 for manufacturing a zinc oxide conductive film, characterized in that in claim 1, the hydrogen is added at a partial pressure ratio of 10.0% or less. How to make
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3236886A JPS62190612A (en) | 1986-02-17 | 1986-02-17 | Manufacture of zinc oxide conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3236886A JPS62190612A (en) | 1986-02-17 | 1986-02-17 | Manufacture of zinc oxide conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62190612A true JPS62190612A (en) | 1987-08-20 |
Family
ID=12357002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3236886A Pending JPS62190612A (en) | 1986-02-17 | 1986-02-17 | Manufacture of zinc oxide conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190612A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006249540A (en) * | 2005-03-14 | 2006-09-21 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Method for forming transparent electroconductive thin-film with low resistance |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54127598A (en) * | 1978-03-27 | 1979-10-03 | Sharp Corp | Process for fabricating transparent conductive film |
-
1986
- 1986-02-17 JP JP3236886A patent/JPS62190612A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54127598A (en) * | 1978-03-27 | 1979-10-03 | Sharp Corp | Process for fabricating transparent conductive film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006249540A (en) * | 2005-03-14 | 2006-09-21 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Method for forming transparent electroconductive thin-film with low resistance |
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