JPS60258959A - Manufacture of color solid-state image pickup device - Google Patents
Manufacture of color solid-state image pickup deviceInfo
- Publication number
- JPS60258959A JPS60258959A JP59114907A JP11490784A JPS60258959A JP S60258959 A JPS60258959 A JP S60258959A JP 59114907 A JP59114907 A JP 59114907A JP 11490784 A JP11490784 A JP 11490784A JP S60258959 A JPS60258959 A JP S60258959A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- protective film
- color solid
- pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 230000001681 protective effect Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 25
- 238000003384 imaging method Methods 0.000 claims description 16
- 238000010030 laminating Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract 1
- 108091008695 photoreceptors Proteins 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- 230000007547 defect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 108010025899 gelatin film Proteins 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000012192 staining solution Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、カラー固体撮像装置の製造方法の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a method for manufacturing a color solid-state imaging device.
〔発明の技術的背景、１とびその問題点〕周知の如く、
固体機ｇｌ索子は小型、軽量、長寿命等の利点を有する
ことから、最近、そのカラー化の開発が精力的に行なわ
れている。[Technical background of the invention, 1 and its problems] As is well known,
Since solid-state glazing has advantages such as small size, light weight, and long life, colorization of the solid-state glider has recently been actively developed.
従来、ヒリした固体撮像素子を有したカラー固体撮像装
置は、例えば第１図（ａ）・〜（ｄ）に示すように製造
されている。まず、例えばシリコン基板１上に独立した
受光素子（図示せず）を形成した後、同基板１上にがン
ディングノ苛ツド部２・・・を形成する。つづいて、全
面にパッジベージ１ン膜３を形成した後、前記ノ臂ツド
部２・・・に対応するパッジページ曹ン膜Ｓを選択的に
除去し開口部４・・・を形成する（第１図（、）図示）
。次いで、前記パッジページ田ン膜Ｓ上の所定位置に有
機着色層例えば赤フイルタ層５を写真蝕刻（ｐｇｐ ）
法によ多形成する（第１図（ｂ）図示）。Conventionally, a color solid-state imaging device having a burnt solid-state imaging device has been manufactured, for example, as shown in FIGS. 1(a) to 1(d). First, an independent light receiving element (not shown) is formed on, for example, a silicon substrate 1, and then a bonding hole 2 is formed on the same substrate 1. Subsequently, after forming the Padge Page 1 film 3 on the entire surface, the Padge Page 1 film S corresponding to the arm portions 2... is selectively removed to form openings 4... Figure 1 (,) shown)
. Next, an organic colored layer, for example, a red filter layer 5, is photo-etched (PGP) at a predetermined position on the PADGE PAGE film S.
(Fig. 1(b) illustration).
しかる後、全面に前記開口部４・・・に対応する部分が
開口したエポキシ樹脂岬からなる透明な保護膜６を形成
する（第１図（ｅ）図示）。、以下、同様にして青フイ
ルタ層１、透明な第２の保帥膜８、緑フイルタ層９及び
透明な第３の保護膜１０を順次形成し、カラー固体撮像
装置を製造する（第１図（ｄ）図示）。以下、この製造
方法を従来例１とする。Thereafter, a transparent protective film 6 made of an epoxy resin cape with openings corresponding to the openings 4 is formed over the entire surface (as shown in FIG. 1(e)). Thereafter, a blue filter layer 1, a transparent second protective film 8, a green filter layer 9, and a transparent third protective film 10 are sequentially formed in the same manner to manufacture a color solid-state imaging device (see FIG. 1). (d) As shown). Hereinafter, this manufacturing method will be referred to as Conventional Example 1.
しかしながら、前述した従来例１によれば、がンディン
グノｆツド部２・・・を露出した状態で赤フィルタｍｓ
、ｔｙイルタ層７、黄フィルタ層９を夫々形成するため
、前記パッド部２・・・が有機着色層の材料、現像液、
染色液等にさらされ、化学反応により変化してがンディ
ング不良を起こしやすい。また、各々のフィルタ層５．
７．９がＰＥＰ法によ多形成されるため、工程数が多く
歩留シ低下を起こす。However, according to the conventional example 1 described above, the red filter ms is
, ty filter layer 7, and yellow filter layer 9, the pad portion 2... is made of organic colored layer material, developer,
When exposed to staining solutions, etc., it changes due to chemical reactions and is likely to cause poor bonding. Moreover, each filter layer 5.
Since a large amount of 7.9 is formed by the PEP method, the number of steps is large and the yield decreases.
このようなことから、カラー用固体撮像装置は、第２図
（畠）〜（ｃ）に示すような改良された製造方法によシ
製造されている。まず、前記と同様に基板１上にがンデ
ィングパッド部２・・・を形成した後、全面にｔ４ツシ
ペーシ冒ン膜３を形成する（第２図（、）図示）。つづ
いて、既述したよりＫ ｉ４ッシペーシロン膜３上に赤
フイルタ層５、透明な第１の保護膜６、青フイルタ層１
、透明な第２の保護膜８、緑フイルタ層９及び透明な第
３の保護膜１０を順次形成する（第２図（ｂ）図示）。For this reason, color solid-state imaging devices are manufactured by an improved manufacturing method as shown in FIGS. 2(Hata) to 2(c). First, after forming the bonding pad portions 2 on the substrate 1 in the same manner as described above, a t4 paste etching film 3 is formed on the entire surface (as shown in FIG. 2(a)). Subsequently, a red filter layer 5, a transparent first protective film 6, and a blue filter layer 1 are formed on the K i4 pescillon film 3 as described above.
, a transparent second protective film 8, a green filter layer 9, and a transparent third protective film 10 are sequentially formed (as shown in FIG. 2(b)).
次いで、第３の保護膜１０をマスクとしてパッジベージ
冒ン膜３を選択的に除去して開口部４・・・を形成し、
カラー固体撮像装置を形成する（第２図（、）図示）。Next, using the third protective film 10 as a mask, the pudgebage attack film 3 is selectively removed to form openings 4.
A color solid-state imaging device is formed (as shown in FIG. 2(, )).
以下、この製造方法を従来例２とする。ヒリして従来例
２によれば、各フィルタ層５．７．９を形成する際、？
ンディンクハッド部２・・・をパッジページ璽ン膜３で
被覆しておくため、前述したがンディンダ不良を回避で
きる。しかしガから、工程数が多く歩留シ低下を起こす
という問題は解消するに至らない。Hereinafter, this manufacturing method will be referred to as Conventional Example 2. However, according to Conventional Example 2, when forming each filter layer 5.7.9, ?
Since the binding hard portions 2 . . . are covered with the pad page binding film 3, it is possible to avoid the binding defects as described above. However, this does not solve the problem of a large number of steps and a decrease in yield.
更に、従来、カラー固体撮像装置は第３図（ａ）〜（ｄ
）に示すように製造されている（特開昭５６−５８２８
５）。まず、第２図（＆）と同様に基板１上にパッジベ
ージ冒ン膜３を形成する（第３図（ａ）図示）。つづい
て、このノ４ツシペーシ冒ン膜３上に赤フイルタ層５、
透明な第１の保囮膜６、實フィルタ層７、透明な第２の
保＠膜８、黄フ゛イルタ＃９及び透明な第３の保護膜１
０を各保護膜が開口されてない状態で順次形成する（第
３図（ｂ）図示）。次いで、がンディングノ々ツド部２
・・・上の第１〜第３の保護膜６．８．１゜をＰＥＰ法
によシ一括して選択的に除去しく第３図（、）図示）、
更にこれら保護膜６、ＩＩ、１０をマスクとしてパッジ
ページ璽ン膜３に開口部４・・・を形成し、カラー固体
撮像装置を製造する（第３図（、）図示）。以下、この
製造方法を従来例３とする。しかるに、この従来例３に
よれば、各フィルタ層５，７．９を形成する際、ゾンデ
イングツ昔ツド部２・・・をパッジベージ繋ン膜３で被
覆しておくため、？ンディング不良を回避できる。ｉた
、各保護膜６．８．１０を１回のＰＥＰ法によシ一括し
て選択的に除去するため、ＰＥＰの工程数を軽減できる
。しかしながら、従来例３においては各フィルタ層５．
７．９の形成時に熱処理工程が入いるため、保護膜６．
８．１０が架橋反応を起ヒしやすい。従って、 ＰＥＰ
法によシこれら保護膜６．ＩＩ、１０を一括して選択的
に除去する際、これらを十分に除去することができない
。そのため、熱処理工程で架橋反応を生じないような保
護膜を選ばなければならず、その材料選定が困難である
。Furthermore, conventional color solid-state imaging devices are shown in FIGS.
) is manufactured as shown in (Japanese Patent Application Laid-Open No. 56-5828
5). First, a padding film 3 is formed on the substrate 1 in the same manner as in FIG. 2(&) (as shown in FIG. 3(a)). Subsequently, a red filter layer 5 is placed on this four-sided paste film 3.
Transparent first protective film 6, real filter layer 7, transparent second protective film 8, yellow filter #9, and transparent third protective film 1
0 is sequentially formed in a state where each protective film is not opened (as shown in FIG. 3(b)). Next, the binding knot part 2
. . . The first to third protective films 6.8.1° above are selectively removed all at once by the PEP method (as shown in Fig. 3),
Further, using these protective films 6, II, and 10 as masks, openings 4 are formed in the padding page film 3 to manufacture a color solid-state imaging device (as shown in FIG. 3). Hereinafter, this manufacturing method will be referred to as Conventional Example 3. However, according to this conventional example 3, when forming each of the filter layers 5, 7, 9, the tube portions 2... are covered with the padding bonding film 3. It is possible to avoid landing defects. In addition, since each of the protective films 6, 8, and 10 is selectively removed all at once using the PEP method, the number of PEP steps can be reduced. However, in Conventional Example 3, each filter layer 5.
Since a heat treatment step is required when forming the protective film 6.9.
8.10 tends to cause crosslinking reactions. Therefore, PEP
By law, these protective films6. When selectively removing II and 10 all at once, these cannot be removed sufficiently. Therefore, it is necessary to select a protective film that does not cause a crosslinking reaction during the heat treatment process, and selection of the material is difficult.
本発明は上記事情に鎌みてなされたもので、がンディン
グノ々ツド部の？ンディング不良を解消し、工程数を減
少するととは勿論のこと、有機着色層を保膜する透明な
保護膜の材料選定を容易にし得るカラー固体撮像装置の
製造方法を提供すゐことを目的とする４のである。The present invention has been made in consideration of the above circumstances, and includes the following: The purpose of the present invention is to provide a method for manufacturing a color solid-state imaging device that not only eliminates printing defects and reduces the number of steps, but also facilitates the selection of materials for the transparent protective film that retains the organic colored layer. There are 4 things to do.
本発明は、がンディング／４ツド部を形成した半導体基
板上にΔツシペーシ■ン膜を介して有機着色層と透明な
保護膜を適宜積層した後、全面に前記パッド部に対応す
る部分が開口したマ。In the present invention, after appropriately laminating an organic colored layer and a transparent protective film via a Δ-paste film on a semiconductor substrate on which a bonding/four-way pad portion is formed, a portion corresponding to the pad portion is opened on the entire surface. I did it.
スフ材を形成し、このマスク材を用いて保護膜を選択的
に除去することによシ、保護膜の材料選定を容易にする
ことを主目的としたものである。また、各有機着色層を
形成する際、がンティングノヤッド′部をΔツシペーシ
四ン膜で被覆することによシ？ンディンダ不良を回避す
るとと亀に、各保護膜を１回のＰＥＰ法で除去すること
により工程数の軽減を図った。The main purpose of this method is to facilitate the selection of the material for the protective film by forming a blanket material and selectively removing the protective film using this mask material. In addition, when forming each organic coloring layer, it is possible to coat the adhesive layer with a Δtxy film. In order to avoid the occurrence of defects, we attempted to reduce the number of steps by removing each protective film in one PEP process.
以下、本発明の一実施例を第４図（ａ）〜（ｇ）を参照
して説明する。An embodiment of the present invention will be described below with reference to FIGS. 4(a) to 4(g).
〔１〕 まず、例えばシリコン基板２１上に独立した受
光素子（図示せず）を形成した後、同基板１上にがンデ
ィングノ々ツド部２２・・・を形成し、パッジページ冒
ン膜としてのＰｈｏｇｐｈｏ−８ｌｌｉｃａｔｅＧｌａ
ｍｓ （ＰＥＧ ）膜２３を形成した（第４図（ａ）図
示）。つづいて、前記ノ々ツド部２２・・・上のＰ８Ｇ
膜２３を除去することなく、ＰＳＧ膜２膜上３上えばゼ
ラチン−重クロム酸水溶液を塗布してゼラチン膜を形成
し、露光、現像を行なった後、ゼラチン膜を赤の染色液
に浸漬して赤フイルタ層２４を形成した。次いで、この
赤フイルタ層′１ ．７を含む全面に例えば−ポキシ樹
脂からなる第１の透明な保護膜２５を塗布、硬化した。[1] First, after forming an independent light-receiving element (not shown) on, for example, a silicon substrate 21, forming bonding nozzles 22 on the same substrate 1, and using it as a pad page cleaning film. Phogpho-8llicateGla
A ms (PEG) film 23 was formed (as shown in FIG. 4(a)). Next, P8G on the notch portion 22...
Without removing the film 23, a gelatin-dichromic acid aqueous solution is applied onto the PSG film 2 and film 3 to form a gelatin film, and after exposure and development, the gelatin film is immersed in a red staining solution. A red filter layer 24 was formed. Next, this red filter layer '1. A first transparent protective film 25 made of, for example, -poxy resin was coated on the entire surface including 7 and cured.
以下、同様にして青フイルタ層２６、透明な第２の保護
膜２７、緑フイルタ層２８、透明な第３の保護膜２９を
順次形成した（第４図（ｂ）図示）。Thereafter, a blue filter layer 26, a transparent second protective film 27, a green filter layer 28, and a transparent third protective film 29 were sequentially formed in the same manner (as shown in FIG. 4(b)).
しかる後、全面にマスク材料層３０を塗布し、硬化した
（第４図（Ｃ）図示）。Thereafter, a mask material layer 30 was applied to the entire surface and cured (as shown in FIG. 4(C)).
〔１１〕次に、全面にフすトレジスト層を塗布した後、
露光、現像を行なって前記パッド部２２・・・に対応す
る部分が開口されたレジストパターン３１を形成した（
第４図（ｄ）図示）。つづいて、このレジストパターン
３１をマスクとして前記マスク材料層３０を例えばフッ
化アンモニウム水溶液によシ選択的に除去し、バット部
２２・・・に対応する部分に開口部３２を有するマスク
材３３を形成した（第４図（・）図示）。次いで、この
マスク材３３により酸素プラズマを用いてパッド部２２
・・・上の各保護膜２５．２’ｌ、２９を選択的に除去
するとともに、レジストパターン３１も同時に除去した
（第４図（ｆ）図示）。しかる後、フッ化アンモニウム
水溶液によシマスフ材３３の開口部３２から露出するＰ
ＥＧ膜２３を選択的にエツチング除去すると同時に、マ
スク材３３も除去し、カラー固体撮像装置を除去した（
第４図（ｇ）図示）。[11] Next, after applying a film resist layer to the entire surface,
Exposure and development were performed to form a resist pattern 31 in which portions corresponding to the pad portions 22 were opened (
(Illustrated in FIG. 4(d)). Subsequently, using this resist pattern 31 as a mask, the mask material layer 30 is selectively removed using, for example, an ammonium fluoride aqueous solution to form a mask material 33 having openings 32 in portions corresponding to the butt portions 22 . was formed (as shown in Fig. 4 (•)). Next, using this mask material 33, the pad portion 22 is exposed using oxygen plasma.
...The upper protective films 25.2'l and 29 were selectively removed, and the resist pattern 31 was also removed at the same time (as shown in FIG. 4(f)). After that, the ammonium fluoride aqueous solution is applied to the P exposed from the opening 32 of the strip material 33.
At the same time as the EG film 23 was selectively etched away, the mask material 33 was also removed, and the color solid-state imaging device was removed (
(Illustrated in FIG. 4(g)).
しかして、本発明によれば、？ンディングノ９ッド部２
２・・・を形成したシリコン基板２１上にＰＥＧ膜２３
を形成し、更にとのＰＳＧ膜２膜上３上フイルタ層２４
、透明な第１の保農膜２５、青フイルタ層２６、透明な
第２の保護膜２７、緑フイルタ層２８及び透明な第３の
保護膜２９を順次積層し、しかる後前記パッド部２２・
・・に対応した部分に開口部３２・・・を有するマスク
材３３を形成し、このマスク材３８を用いて酸素プラズ
マによ多缶保護膜２５．２Ｆ、２９を一括して選択的に
除去するため、各フィルタ層２４．２Ｂ、ｊＪｌの形成
時に熱処理工程が入っても、各保護膜２Ｂ、２７．２９
の材料に関係なく、これらの一括した除去ができる。However, according to the present invention? Ndingno 9d part 2
2... is formed on the silicon substrate 21 on which the PEG film 23 is formed.
A filter layer 24 is formed on the PSG film 2 and 3.
, a transparent first protection film 25, a blue filter layer 26, a transparent second protective film 27, a green filter layer 28, and a transparent third protective film 29 are sequentially laminated, and then the pad portion 22.
A mask material 33 having openings 32... is formed in the portions corresponding to..., and using this mask material 38, the multi-can protective films 25.2F and 29 are selectively removed at once by oxygen plasma. Therefore, even if a heat treatment process is performed when forming each filter layer 24.2B, jJl, each protective film 2B, 27.29
These can be removed all at once, regardless of the material.
また、各フィルタ層２４．２６．２Ｂを形成する際、前
記／４ツド部２２・・・をＰＥＧ膜２３を覆った状態で
行なうため、従来例１の如きメンディング不良を回避で
きる。Further, when forming each of the filter layers 24, 26, 2B, the quarter-shaped portions 22, .
９−
更に、各保護膜２５．２７．２９を、マスク材３３を用
いて酸素ゾラズｉにより一括して選択的に除去し、工程
数を軽減し得、り、また、この際、各保護膜１１５．２
７，２９の選択的な除去と同時にレジストパターンＳ１
も除去でき、工程数を軽減し得る。9- Furthermore, each of the protective films 25, 27, and 29 can be selectively removed all at once with oxygen zolaz i using the mask material 33, and the number of steps can be reduced. 115.2
7 and 29 and at the same time resist pattern S1.
can also be removed, reducing the number of steps.
なお、上記実施例では、パッジベージ習ン膜としてＰＥ
Ｇ膜を用いたが、これに限らない。In addition, in the above embodiment, PE is used as the padding layer.
Although the G film is used, the invention is not limited to this.
また、上記実施例では保護膜の材料としてエポキシ樹脂
を用いたが、これに限らず、ＰＧＭＡ％ＰＭＭＡ等を用
いてもよい。なお、マスク材の材料も上記実施例のもの
に限定されるものではない。Further, in the above embodiments, epoxy resin was used as the material for the protective film, but the material is not limited to this, and PGMA%PMMA or the like may be used. Note that the material of the mask material is not limited to that of the above embodiment.
更に、上記実施例で拡、有機着色層として赤。Furthermore, in the above examples, red is used as an organic colored layer.
青、緑のフィルタ層を用いた場合について述べたが、こ
れらの色の組み合わせに限らず、更に他の色のフィルタ
層を設けてもよい。Although the case has been described in which blue and green filter layers are used, the combination is not limited to these colors, and filter layers of other colors may be provided.
以上詳述した如く本発明によれば、がンディング不良の
解消、工程数の軽減を図シ、各保護膜の、材料選定を容
易にし得るカラー固体撮像装１０−
置の製造方法を提供できるものである。As detailed above, according to the present invention, it is possible to provide a method for manufacturing a color solid-state imaging device that eliminates bonding defects, reduces the number of steps, and facilitates material selection for each protective film. It is.
第１図（ａ）〜（ｄ）は従来のカラー固体−像装置の製
造方法を工程順に示す断面図、第２図（ａ）〜（ｃ）は
従来の他のカラー固体撮像装置の製造方法を工程順に示
す断面図、第３図（、）〜（ｄ）は従来の更に他のカラ
ー固体撮像装置の製造方法を工程順に示す断面図、第４
図（、）〜（ｇ）は本発明の一実施例に係るカラー固体
撮像装置の製造方法を工程順に示す断面図であるｅ
２１・・・シリコン基板、２２・・・がンディング／臂
ッド部、；２Ｂ・・・ＰＥＧ ＩＫ （パッジページ目
ン膜）、１１４．２６．２ｇ・・・フィルタ層（有機着
色層）、２５、ｓｒ、２９・・・保護膜、３０・・・マ
スク材料層、３１・・・レジストパターン、３２・・・
開口部、３３・・・マスク材。
出願人代理人 弁理士 鈴 江 武 彦１１−
区 −−一一
、ｔｏ Ｄ Ｌ） ０
緊
３１８−
区 、−−
Ｎ （１；） Ｄ ’
味
臂 υ ℃ Φ
暖 ″″″′−
＾ へ
−■
の ＾ ＾ ｒ
味 Φ ｐ ｕ −。
３１９−FIGS. 1(a) to (d) are cross-sectional views showing a conventional color solid-state imaging device manufacturing method in order of process, and FIGS. 2(a) to (c) are other conventional color solid-state imaging device manufacturing methods. FIGS. 3(a) to 3(d) are cross-sectional views showing still another conventional method for manufacturing a color solid-state imaging device in order of steps;
Figures (,) to (g) are cross-sectional views showing the manufacturing method of a color solid-state imaging device according to an embodiment of the present invention in order of steps. 2B...PEG IK (pudge page film), 114.26.2g...filter layer (organic colored layer), 25, sr, 29...protective film, 30...mask material Layer, 31...Resist pattern, 32...
Opening, 33...Mask material. Applicant's representative Patent attorney Suzue Takehiko11- ward ---11, to DL) 0 連 318- ward , -- N (1;) D' taste υ ℃ Φ warm ″″″′- ＾ to −■ ＾ ＾ r taste Φ p u −. 319−
Claims (1)
臂ツド部を形成する工程と、前記基板上に／４ツシペー
シ四ン膜を介して有機着色層と透明な保護膜を有機着色
層が互いに基板主面と平行する方向に対して離間するよ
うに積層する工程と、全面に前記ノ々ツド部に対応する
部分が開口したマスク材を形成する工程と、このマスク
材を用いて前記保護膜を選択的に除去し前記ノ々ツド部
を霧出する工程とを具備することを特徴とするカラー固
体撮像装置の製造方法。A step of forming a pumping tube arm portion on a semiconductor substrate having a light-receiving element on the surface, and applying an organic colored layer and a transparent protective film to each other on the substrate through a four-layer film. a step of laminating the layers so as to be spaced apart from each other in a direction parallel to the surface; a step of forming a mask material with openings corresponding to the notch portions on the entire surface; and a step of selecting the protective film using this mask material. A method for manufacturing a color solid-state imaging device, comprising a step of removing the notch portion and atomizing the notch portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59114907A JPS60258959A (en) | 1984-06-05 | 1984-06-05 | Manufacture of color solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59114907A JPS60258959A (en) | 1984-06-05 | 1984-06-05 | Manufacture of color solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60258959A true JPS60258959A (en) | 1985-12-20 |
Family
ID=14649611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59114907A Pending JPS60258959A (en) | 1984-06-05 | 1984-06-05 | Manufacture of color solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258959A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447986B1 (en) * | 1997-12-29 | 2005-07-04 | 주식회사 하이닉스반도체 | Manufacturing method of color filter of optical sensing element |
| FR2880990A1 (en) * | 2005-01-14 | 2006-07-21 | St Microelectronics Sa | Photodiode semiconductor device, has electrical connection via traversing intermediate layer and connecting upper electrode to contact stud and well formed outside zone and traversing intermediate layer for uncovering connection stud |
-
1984
- 1984-06-05 JP JP59114907A patent/JPS60258959A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447986B1 (en) * | 1997-12-29 | 2005-07-04 | 주식회사 하이닉스반도체 | Manufacturing method of color filter of optical sensing element |
| FR2880990A1 (en) * | 2005-01-14 | 2006-07-21 | St Microelectronics Sa | Photodiode semiconductor device, has electrical connection via traversing intermediate layer and connecting upper electrode to contact stud and well formed outside zone and traversing intermediate layer for uncovering connection stud |
| US7709916B2 (en) | 2005-01-14 | 2010-05-04 | Stmicroelectronics S.A. | Optical semiconductor device having photosensitive diodes and process for fabricating such a device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60258959A (en) | Manufacture of color solid-state image pickup device | |
| JPS6078401A (en) | Color filter and its manufacture | |
| JPS5840507A (en) | Production of color filter for solid-state image pickup element | |
| JP2547194B2 (en) | Method for manufacturing color solid-state imaging device | |
| JPH0250441B2 (en) | ||
| US5053299A (en) | Method of making color filter arrays | |
| JP2614064B2 (en) | Solid color image sensor | |
| JPH031642B2 (en) | ||
| JP2573382B2 (en) | Manufacturing method of solid-state image sensor | |
| JP2702266B2 (en) | Manufacturing method of color filter | |
| JPS5868970A (en) | Color solid-state image sensing element and its manufacture | |
| JPS6259901A (en) | Production of color filter for liquid crystal display | |
| JPS58154808A (en) | Color filter | |
| JPH0746612A (en) | Manufacture of solid-state color image pickup device | |
| JP2943283B2 (en) | Method for manufacturing solid-state imaging device | |
| JPS58118611A (en) | Production of color filter | |
| JP2702196B2 (en) | Color solid-state imaging device and method of manufacturing the same | |
| JPS6041005A (en) | Manufacture of color filter | |
| JPS5893010A (en) | Production of color filter for solid state image pickup device | |
| JPS6055660A (en) | Color solid-state image pickup device and manufacture thereof | |
| JPS6142950A (en) | Color solid-state image sensor | |
| JPH047482B2 (en) | ||
| JPS63158503A (en) | Solid-state color image pickup element | |
| JPH02240964A (en) | Color solid-state image sensing device and manufacture thereof | |
| JPS5910692A (en) | Production of color filter |