JPS60254729A - Correction of mask pattern on mask substrate - Google Patents
Correction of mask pattern on mask substrateInfo
- Publication number
- JPS60254729A JPS60254729A JP59111929A JP11192984A JPS60254729A JP S60254729 A JPS60254729 A JP S60254729A JP 59111929 A JP59111929 A JP 59111929A JP 11192984 A JP11192984 A JP 11192984A JP S60254729 A JPS60254729 A JP S60254729A
- Authority
- JP
- Japan
- Prior art keywords
- ink
- mask pattern
- pattern
- laser beam
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はたとえば電気回路パターン形成のために用い
られるフォトマスク基板上に施されたｍ光性パターンの
欠損等の欠陥を修正する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for correcting defects such as defects in an optical pattern formed on a photomask substrate used for forming an electric circuit pattern, for example.
従来、フォトマスク基板上に銀エマルジョン層等の連光
パターンをフォトリンクラフイ技術等を利用して形成し
たのちに、このイ０られた遮光パターンに欠損等の欠陥
を発見した場合、その部分を筆により喝で修正すること
がおこなわれている。Conventionally, after forming a continuous light pattern such as a silver emulsion layer on a photomask substrate using photolink rough-fi technology, if a defect such as a defect is found in the removed light-shielding pattern, the defective part is removed. It is practiced to revise the text by hand or by hand.
しかし、この従来の壷による修正では熟練を要求され、
しかも熟練者の場合でも量先の太さなどからして欠損部
の大きさが巾３０μｍ程度が限度であり、それ以下の小
さい欠損部の修正は不可能であった。したがって、近時
、ますます微細化の傾同にある微細パターンの無欠陥の
ものを炸裂することは極めて困難な情況にあった。However, this traditional pot-based modification requires skill;
Moreover, even for an expert, the size of the defect is limited to a width of about 30 μm due to the thickness of the tip, and it has been impossible to correct defects smaller than that. Therefore, in recent years, it has been extremely difficult to explode defect-free fine patterns, which are becoming increasingly finer.
この発明は上記事情に鑑みてなされたものであって、数
μｍｍ変度ａ元パターンの欠損でも容易に修正すること
ができるフォトマスク基板上のマスクパターンの修正方
法を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a method for repairing a mask pattern on a photomask substrate, which can easily repair even defects in the original pattern with a variation of a few μmm. .
すなわち、この発明はマスクパターンを被着したマスク
基板の該マスクパターンの欠損部を、まずレーザ光蒸発
性インキにより、該欠損部よりはみ出る程度に大きく充
填し、ついで、不必要なインキはみ出し部分をレーザ光
により蒸発させることを特徴とするマスク基板上のマス
クパターンの修正方法を提供するものである。That is, the present invention first fills the defective portions of the mask pattern of the mask substrate on which the mask pattern is adhered with laser light evaporable ink to the extent that it protrudes beyond the defective portions, and then removes unnecessary ink protruding portions. The present invention provides a method for modifying a mask pattern on a mask substrate, characterized in that the mask pattern is evaporated by laser light.
この発明は、手修正では修正困難な微細なマスクパター
ン欠陥部を、レーザ光照射により蒸発するインキ（すな
わちレーザ光蒸発性インキ）を用いて、この欠陥部を拡
大視しながら欠陥部をその範囲からはみ出る程度に大ま
かに修正し、ついで、適当に細いレーザ光を照射装置を
用い、拡大視しながら、そのはみ出し部に照射させて蒸
発除去する方法であり、特定のインキとレーザ光との組
合せを利用したところに特徴がある。This invention uses ink that evaporates by laser light irradiation (i.e., laser light evaporable ink) to correct fine mask pattern defects that are difficult to correct by manual correction. This is a method in which the ink is roughly corrected to the extent that it protrudes from the ink, and then a suitably thin laser beam is applied to the protruding part using an irradiation device while magnifying the area to evaporate and remove it. It is characterized by the use of .
このレーザ光蒸発性インキの具体例としてはランプブラ
ックの有機溶媒溶液（たとえばトルエン＋イソプロピル
アルコール
なお、手修正で修正容易な個所については従来通り墨又
はインキにて修正してよい。A specific example of this laser light evaporable ink is an organic solvent solution of lamp black (for example, toluene + isopropyl alcohol) Note that areas that can be easily corrected by hand may be corrected with black or ink as usual.
以下、この発明を図面を参照して説明する。The present invention will be explained below with reference to the drawings.
第１図はマスクパターン基板ｌ上に被着された銀エマル
ジョン遮光パターン２，３およびその欠損＠２ａ，３ａ
を示している。まず、これら欠損部２ｍ，３ｍ．を拡大
視しながら、これら欠損部２ｍ，３ｍを、第２図に示す
如くそれぞれ埋めつくし、かつ一部が所定の線２ｂ，３
ｂから、はみ出る程度に借又その他の筆記手段によりレ
ーザ光蒸発性インキ４（たとえばランプブラック１値５
（昭和インキ工業（株）製、商品名）１０重量′ｔ１眠
トルエン６０重量部、イソプロビルアイレコール３
０ｘｉｓからなるインキ）で塗布する。Figure 1 shows silver emulsion light-shielding patterns 2 and 3 deposited on a mask pattern substrate l and their defects @2a and 3a.
It shows. First, these missing parts 2m and 3m. As shown in FIG. 2, these missing parts 2m and 3m are completely filled in, and some of them are aligned with the predetermined lines 2b and 3.
b, use laser light evaporable ink 4 (for example, lamp black 1 value 5
(manufactured by Showa Ink Industries Co., Ltd., trade name) 10% by weight, 60 parts by weight of toluene, Isoprobil Irecole 3
0xis).
ついで、レーザ光照射装置（日本電気（株）製ｓｒ，４
ｓｉｆｆ）で、拡大視しながら各インキはみ出し部４
ａ 、 ４ ｂにレーザ光をスポット照射し、第３図に
示す如くこれらはみ出し部４ ａ 。Next, a laser beam irradiation device (sr, 4 manufactured by NEC Corporation) was used.
siff), check each ink protruding part 4 while looking at the magnified view.
A and 4b are spot-irradiated with a laser beam, and these protruding portions 4a are formed as shown in FIG.
４１）のインキを蒸発除去することにより修正が完了す
る。The correction is completed by evaporating and removing the ink in step 41).
以上、詳述したように、本発明によればマスクパターン
の欠損部の修正をレーザ光蒸発性インキを用いて大まか
におこない、ついでレーザ光線により正確に再度修正す
るようにしたから、修正個所の巾が３０μｍより若干小
さいものはもちろん、数μｍの極めて小さいものでも熟
練を要することなく容易かつ正確におこなうことができ
る。As described in detail above, according to the present invention, the defective portions of the mask pattern are roughly corrected using laser light evaporable ink, and then accurately corrected again using a laser beam. It is possible to easily and accurately perform not only widths slightly smaller than 30 μm but also extremely small widths of several μm without requiring any skill.
第１〜３図は本発明の方法を工程１１に説明するための
マスクパターン基板の一部の平面図である。
図中、ｌ・・・マスクパターン基板、２，３・・・銀エ
マルジョンパターン、２ａ 、３ｍ・・・欠損部、４ｍ
，４ｂ・・・インキはみ出し部。1 to 3 are plan views of a part of a mask pattern substrate for explaining step 11 of the method of the present invention. In the figure, l... mask pattern substrate, 2, 3... silver emulsion pattern, 2a, 3m... defective part, 4m
, 4b... Ink protrusion part.
Claims (2)
／７ ハターンの欠損部を、まずレーザ光蒸発性インキ
により、咳欠損部よりはみ出る程度に人きく光重し、つ
いで、不必要なインキはみ出し部分をレーザ元により蒸
発させることを特徴とするマスク基板上のマスクパター
ンの修正方法。(1) Firstly, the defective part of the square/7 pattern of the mask substrate on which the mask pattern is attached is covered with laser light evaporable ink to the extent that it protrudes beyond the defective part, and then the unnecessary ink is removed. A method for modifying a mask pattern on a mask substrate, the method comprising evaporating a portion using a laser source.
溶媒溶液からなる特許請求の範囲第１項記載のマスクパ
ターンの修正方法。(2) The mask pattern correction method according to claim 1, wherein the laser light evaporable ink comprises a solution of lamp black in an organic solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111929A JPS60254729A (en) | 1984-05-31 | 1984-05-31 | Correction of mask pattern on mask substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111929A JPS60254729A (en) | 1984-05-31 | 1984-05-31 | Correction of mask pattern on mask substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254729A true JPS60254729A (en) | 1985-12-16 |
| JPS6311659B2 JPS6311659B2 (en) | 1988-03-15 |
Family
ID=14573662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59111929A Granted JPS60254729A (en) | 1984-05-31 | 1984-05-31 | Correction of mask pattern on mask substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254729A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4950498A (en) * | 1986-02-24 | 1990-08-21 | Seiko Instruments Inc. | Process for repairing pattern film |
| KR100749976B1 (en) * | 2005-03-09 | 2007-08-16 | 세이코 엡슨 가부시키가이샤 | Photomask, manufacturing method thereof, and manufacturing method of electronic device |
-
1984
- 1984-05-31 JP JP59111929A patent/JPS60254729A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4950498A (en) * | 1986-02-24 | 1990-08-21 | Seiko Instruments Inc. | Process for repairing pattern film |
| KR100749976B1 (en) * | 2005-03-09 | 2007-08-16 | 세이코 엡슨 가부시키가이샤 | Photomask, manufacturing method thereof, and manufacturing method of electronic device |
| US7776492B2 (en) | 2005-03-09 | 2010-08-17 | Seiko Epson Corporation | Photomask, manufacturing method thereof, and manufacturing method of electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6311659B2 (en) | 1988-03-15 |
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