JPS60245233A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS60245233A JPS60245233A JP10208684A JP10208684A JPS60245233A JP S60245233 A JPS60245233 A JP S60245233A JP 10208684 A JP10208684 A JP 10208684A JP 10208684 A JP10208684 A JP 10208684A JP S60245233 A JPS60245233 A JP S60245233A
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- gas
- titanium nitride
- titanium
- titanium tetrachloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は半導体装置の製造方法に関し、特にバリア膜で
ある窒化チタン膜を半導体基板上に堆積する半導体装置
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a titanium nitride film, which is a barrier film, is deposited on a semiconductor substrate.
（従来技術）
従来、バリアメタルである窒化チタン膜の形成方法とし
ては、スパヅタ法、チタンへの窒素のイオン注入法、あ
るいはチタンを窒素雰囲気中で熱処理する方法が知られ
ている。(Prior Art) Conventionally, as a method for forming a titanium nitride film which is a barrier metal, a sputtering method, a method of implanting nitrogen ions into titanium, or a method of heat-treating titanium in a nitrogen atmosphere are known.
そのうち、スパッタによる窒化チタン膜の形成法は、一
般的であるが、スパッタダメージによる素子特性の劣化
及びスパッタ中の残留ガスのトリ込みによる膜質の不安
定が大きいという欠点を有し、それに加え処理能力が低
いという欠点もあった。また第２の方法としてのチタン
への窒素イオン注入法では、極めて大量の窒素イオンド
ーズが必要のため、処理能力が極めて低く、又、イオン
注入ダメージも大きいので実用的でなかった。さらに第
３の方法であるチタンの窒素中での熱処理法は、通常用
いられる１００ＯＡ程度の厚さのチタンを完全に窒化す
るには現実的には無理であ夛、膜厚全体にわたって均一
な膜が得られないという欠点があった。Among these methods, the method of forming titanium nitride films by sputtering is common, but it has the drawbacks of deterioration of device characteristics due to sputter damage and instability of film quality due to trapping of residual gas during sputtering. There was also the drawback of low ability. Furthermore, the second method, nitrogen ion implantation into titanium, requires an extremely large dose of nitrogen ions, resulting in extremely low processing capacity and large ion implantation damage, making it impractical. Furthermore, the third method, heat treatment of titanium in nitrogen, is practically impossible to completely nitride titanium with a thickness of about 100 OA, which is usually used. The disadvantage was that it was not possible to obtain
（発明の目的）
本発明の目的は、上記欠点を除去し、処理能力を充分大
きくでき、かつ半導体基板表面に均一に均質な窒化チタ
ン膜を形成することの可能な半導体装置の製造方法を提
供することにある。(Object of the Invention) An object of the present invention is to provide a method for manufacturing a semiconductor device that eliminates the above-mentioned drawbacks, can sufficiently increase the processing capacity, and can form a uniform titanium nitride film on the surface of a semiconductor substrate. It's about doing.
（発明の構成）
本発明の半導体装置の製造方法は、四塩化チタンとアン
モニアを主原料とし、１気圧ｇ低い雰囲気での気相成長
法によシ窒化チタン膜を半導体基板表面に堆積すること
により構成される。(Structure of the Invention) The method for manufacturing a semiconductor device of the present invention includes depositing a titanium nitride film on the surface of a semiconductor substrate using titanium tetrachloride and ammonia as main raw materials by vapor phase growth in an atmosphere with a pressure of 1 atm. Consisted of.
（作用）
本発明においては、液体の充分蒸気圧の高い四塩化チタ
ンとアンモニアガスを主原料にすることにより通常用い
られる減圧気相成長装置をそのまま利用して窒化チタン
膜を形成することが出来るため、充分大量の基板を処理
することが可能となる。また減圧気相成長法のため膜厚
及び膜質の均一性も良い状態で得ることが可能である。(Function) In the present invention, a titanium nitride film can be formed using a commonly used reduced pressure vapor phase growth apparatus as is by using liquid titanium tetrachloride and ammonia gas, which have sufficiently high vapor pressure, as the main raw materials. Therefore, it becomes possible to process a sufficiently large amount of substrates. Further, because of the reduced pressure vapor phase growth method, it is possible to obtain good uniformity in film thickness and film quality.
素子特性の劣化は認められない。No deterioration of device characteristics was observed.
従って本発明方法で窒化チタン１ｌＩ３！を形成した半
導体装置の特性は、ばらつきがすくなく、かつ信頼性の
高いものとなる。Therefore, by the method of the present invention, titanium nitride 1lI3! The characteristics of the semiconductor device formed with the above-mentioned semiconductor device will have less variation and will be highly reliable.
（実施例）
以下、本発明の実施例について、図面を参照して説明す
る。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第４図は本発明の第１の実施例を説明す不ための減圧気
相成長装置の説明図である。FIG. 4 is an explanatory diagram of a reduced pressure vapor phase growth apparatus for explaining the first embodiment of the present invention.
第１図において、反応室１２には、外部から反応室内部
が均一に加熱されるように赤外線ヒータ１３が設けられ
ている。反応ガ漬導入管１１が反応室中央にＴ字型の形
状で設けられ、上部水平管の下方にはガス吹出孔が設け
られそいる。四塩化チタンの蒸気とアンモニアガス及び
キャリアガスとしての窒素ガスが、ガス混合装置にて混
合された後、前記導入管１１を通して反応室１２内に１
０のように導かれる。反応室１２は排気装置１５によシ
約０．３〜０．５Ｔｏｒｒに保たれ、また反応室１２の
内部は５００〜６５０℃の範囲で窒化チタン膜が半導体
基板１４０表面に堆積する。In FIG. 1, an infrared heater 13 is provided in a reaction chamber 12 so that the inside of the reaction chamber is uniformly heated from the outside. A reaction gas introduction pipe 11 is provided in the center of the reaction chamber in a T-shape, and a gas blowing hole is provided below the upper horizontal pipe. After the titanium tetrachloride vapor, ammonia gas, and nitrogen gas as a carrier gas are mixed in a gas mixing device, they are introduced into the reaction chamber 12 through the introduction pipe 11.
It is derived as 0. The reaction chamber 12 is maintained at a pressure of approximately 0.3 to 0.5 Torr by an exhaust device 15, and a titanium nitride film is deposited on the surface of the semiconductor substrate 140 at a temperature within the reaction chamber 12 in the range of 500 to 650°C.
また、第２の実施例として、反応室内部に平朽平板電極
を半導体基板設置場所の上下に設けて反応ガスをプラズ
マ励起することにより更に反応温度を低くすることがで
きる。In addition, as a second embodiment, the reaction temperature can be further lowered by providing flat plate electrodes inside the reaction chamber above and below the location where the semiconductor substrate is installed to excite the reaction gas into plasma.
（発明の効果）
以上説明したように、本発明によれば、処理能力が大き
く、かつ素子特性の劣化がない状態で、均一な膜厚でか
つ均質な膜質でバリアメタルたる窒化チタン膜を半導体
基板表面に堆積することが可能となる。(Effects of the Invention) As explained above, according to the present invention, a titanium nitride film, which is a barrier metal, can be made into a semiconductor with a uniform thickness and a uniform film quality, while having a large processing capacity and without deterioration of device characteristics. It becomes possible to deposit on the substrate surface.
第１図は本発明の一実施例を説明するための双互気相成
長装置の断面図である。
１−０・・・・・・反応ガス、１１・・・・・・反応ガ
ス導入管、１２・・・・・・反応室、１３・・・・・・
赤外線ヒーター、１４・・・・・・半導体基板、１５・
・・・・・排気装置。
代理人 弁理士 内 原 晋１．ｙ；
５
ｊＰ７７閲FIG. 1 is a sectional view of a reciprocal vapor phase growth apparatus for explaining one embodiment of the present invention. 1-0...Reaction gas, 11...Reaction gas introduction pipe, 12...Reaction chamber, 13...
Infrared heater, 14... Semiconductor substrate, 15.
...Exhaust device. Agent: Susumu Uchihara, patent attorney 1. y; 5 jP77 review
Claims (1)
雰囲気での気相成長法により窒化チタン膜を半導体基板
表面に堆積する事を特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, characterized in that a titanium nitride film is deposited on a semiconductor substrate surface by a vapor phase growth method using titanium tetrachloride and ammonia as main raw materials in an atmosphere lower than 1 atm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10208684A JPS60245233A (en) | 1984-05-21 | 1984-05-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10208684A JPS60245233A (en) | 1984-05-21 | 1984-05-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60245233A true JPS60245233A (en) | 1985-12-05 |
Family
ID=14317962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10208684A Pending JPS60245233A (en) | 1984-05-21 | 1984-05-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60245233A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300321A (en) * | 1992-05-12 | 1994-04-05 | Kawasaki Steel Corporation | Process for depositing titanium nitride film by CVD |
| EP1641031A3 (en) * | 2004-09-22 | 2007-09-05 | Asm International N.V. | Deposition of TiN films in a batch reactor |
-
1984
- 1984-05-21 JP JP10208684A patent/JPS60245233A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300321A (en) * | 1992-05-12 | 1994-04-05 | Kawasaki Steel Corporation | Process for depositing titanium nitride film by CVD |
| EP1641031A3 (en) * | 2004-09-22 | 2007-09-05 | Asm International N.V. | Deposition of TiN films in a batch reactor |
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