JPS60227461A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS60227461A JPS60227461A JP59079683A JP7968384A JPS60227461A JP S60227461 A JPS60227461 A JP S60227461A JP 59079683 A JP59079683 A JP 59079683A JP 7968384 A JP7968384 A JP 7968384A JP S60227461 A JPS60227461 A JP S60227461A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- groove
- sio2
- shaped
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59079683A JPS60227461A (ja) | 1984-04-19 | 1984-04-19 | 半導体集積回路装置 |
DE8585302116T DE3565339D1 (en) | 1984-04-19 | 1985-03-26 | Semiconductor memory device and method of manufacturing the same |
EP85302116A EP0164829B1 (en) | 1984-04-19 | 1985-03-26 | Semiconductor memory device and method of manufacturing the same |
US07/110,616 US4786954A (en) | 1984-04-19 | 1987-10-19 | Dynamic ram cell with trench surrounded switching element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59079683A JPS60227461A (ja) | 1984-04-19 | 1984-04-19 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60227461A true JPS60227461A (ja) | 1985-11-12 |
JPH0336309B2 JPH0336309B2 (ko) | 1991-05-31 |
Family
ID=13696998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59079683A Granted JPS60227461A (ja) | 1984-04-19 | 1984-04-19 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60227461A (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
JPS61108163A (ja) * | 1984-11-01 | 1986-05-26 | Nec Corp | 半導体記憶装置の製造方法 |
JPS62145864A (ja) * | 1985-12-20 | 1987-06-29 | Nec Corp | ダイナミツク型半導体記憶装置の記憶素子構造および製造方法 |
JPS63228742A (ja) * | 1987-03-06 | 1988-09-22 | シ−メンス、アクチエンゲゼルシヤフト | 3次元1トランジスタメモリセル構造とその製法 |
JPS645052A (en) * | 1987-06-29 | 1989-01-10 | Mitsubishi Electric Corp | Capacitor cell of semiconductor storage device |
-
1984
- 1984-04-19 JP JP59079683A patent/JPS60227461A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
JPS61108163A (ja) * | 1984-11-01 | 1986-05-26 | Nec Corp | 半導体記憶装置の製造方法 |
JPH0369185B2 (ko) * | 1984-11-01 | 1991-10-31 | Nippon Electric Co | |
JPS62145864A (ja) * | 1985-12-20 | 1987-06-29 | Nec Corp | ダイナミツク型半導体記憶装置の記憶素子構造および製造方法 |
JPS63228742A (ja) * | 1987-03-06 | 1988-09-22 | シ−メンス、アクチエンゲゼルシヤフト | 3次元1トランジスタメモリセル構造とその製法 |
JPS645052A (en) * | 1987-06-29 | 1989-01-10 | Mitsubishi Electric Corp | Capacitor cell of semiconductor storage device |
Also Published As
Publication number | Publication date |
---|---|
JPH0336309B2 (ko) | 1991-05-31 |
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