JPS6022130A - Device for protecting photomask for exposure - Google Patents
Device for protecting photomask for exposureInfo
- Publication number
- JPS6022130A JPS6022130A JP58132253A JP13225383A JPS6022130A JP S6022130 A JPS6022130 A JP S6022130A JP 58132253 A JP58132253 A JP 58132253A JP 13225383 A JP13225383 A JP 13225383A JP S6022130 A JPS6022130 A JP S6022130A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- support frame
- ventholes
- pattern
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、集積回路など半導体装置の製造に用いられ
る露光用フォトマスクの保護装置に関する0
〔従来技術〕
従来のフォトマスクの保護装置は、第1図及び第2図に
断面図及び斜視図で示すようになっていた。フォトマス
クの保護装fit tllは次のようになっている。(
2)は上下が開口した支持枠、(3)はニトロセルロー
ズなど光学的に透明な材質からなり、支持枠(2)の上
部に固着された透明保護板である。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to a protection device for an exposure photomask used in the manufacture of semiconductor devices such as integrated circuits. It was designed to be shown in sectional and perspective views in FIGS. 1 and 2. The photomask protective equipment fittll is as follows. (
2) is a support frame with an open top and bottom, and (3) is a transparent protection plate made of an optically transparent material such as nitrocellulose and fixed to the upper part of the support frame (2).
(5)は露光用フォトマスクであり、ガラス基板(6)
の上面に金属の薄膜パターン(7)を形成しである。(5) is a photomask for exposure, and a glass substrate (6)
A thin metal film pattern (7) is formed on the upper surface of the substrate.
半導体集積回路累子を製作する場合、このフォトマスク
(5)を用い、半導体ウェーハ(図示していない)上に
薄膜パターン(7)を8〜10回繰返し転写するのが一
般的である。When manufacturing a semiconductor integrated circuit device, this photomask (5) is generally used to repeatedly transfer a thin film pattern (7) onto a semiconductor wafer (not shown) 8 to 10 times.
ところで、このフォトマスク(6)によりパターンをウ
ェーハ上に転写する場合、ガラス基板(6)にごみなど
の異物が付着したり、取扱いの不手際による薄膜パター
ン(7)の欠損が生じたりすると、ウエ−へ上にそのt
t転写される。これにより、ウェーハ上でのパターン欠
陥となって半導体集積回路素子の歩留りを大きく低下さ
せることになる。また、ウェーハ上に1個宛基盤目状に
半導体集積回路素子を転写していく、いわゆるステップ
・アンド・リピート方式では、ガラス基板(6)上に付
着したごみなどの異物、パターン(7)の欠損はすべて
半導体集積回路素子に転写され、共通欠陥となりウェー
ハ上で良品がとれないことになる。By the way, when transferring a pattern onto a wafer using this photomask (6), if foreign matter such as dust adheres to the glass substrate (6) or if the thin film pattern (7) is damaged due to improper handling, the wafer may be damaged. - up to that t
t transcribed. This results in pattern defects on the wafer, which greatly reduces the yield of semiconductor integrated circuit devices. In addition, in the so-called step-and-repeat method in which semiconductor integrated circuit elements are transferred one by one onto a wafer in the form of a board pattern, foreign matter such as dust adhering to the glass substrate (6) and defects in the pattern (7) can be removed. All the defects are transferred to the semiconductor integrated circuit elements and become a common defect, making it impossible to produce good products on the wafer.
これをなくするため、第1図のように、フォトマスク(
6)のガラス基板(6)上に、フォトマスクの保護装置
(!)を接着剤(4)により接着している。In order to eliminate this, as shown in Figure 1, a photomask (
A photomask protector (!) is bonded onto the glass substrate (6) of 6) with an adhesive (4).
上記従来のフォトマスクの保護装置I (11は、フォ
トマスク(5)のパターン(7)の領域を密開状態で囲
っており、このため、内気と外気とで温度や湿度の差が
できる。したがって、透明保護板(3)へ露滴が付着し
たり、温度上昇による内外気の圧力差により透明保護板
111にひずみなどが生じたりし、半導体ウェーハへの
パターンの正常な転写を妨げる欠点があった。The conventional photomask protection device I (11) hermetically surrounds the area of the pattern (7) of the photomask (5), which creates a difference in temperature and humidity between the inside air and the outside air. Therefore, dew droplets may adhere to the transparent protection plate (3), or distortion may occur in the transparent protection plate 111 due to the pressure difference between the inside and outside air due to temperature rise, which may hinder the normal transfer of the pattern onto the semiconductor wafer. there were.
この発明は、支持枠に内外に貫通する通気***を設け、
内気と外気の温度や湿度の差を゛なくし、透明保蹟板の
露滴付着やひずみ発生を防ぎ、半導体ウェーハにパター
ンの正確な転写がされる露光用フォトマスクの保護装置
を提供することを目的としている。This invention provides a support frame with small ventilation holes that penetrate inside and outside,
It is an object of the present invention to provide a protection device for an exposure photomask that eliminates the difference in temperature and humidity between inside air and outside air, prevents dew droplets from adhering to a transparent protection plate and generates distortion, and allows accurate transfer of a pattern onto a semiconductor wafer. The purpose is
第3図及び第5図はこの発明の一実施例によるフォトマ
スクの保護装置を示す断面図及び斜視図であり、(9〜
(嚇は上記従来装置と同一のものである。フォトマスク
の保護装@ (lullは、上下が開口した支持枠(1
1)の側部に、内外に貫通する通気***+121が複数
箇所設けられている。これらの***0請は直径例えば5
00μ以下の微小径にしており、外方が大きいテーパ穴
になっている。FIG. 3 and FIG. 5 are a sectional view and a perspective view showing a photomask protection device according to an embodiment of the present invention.
(The threat is the same as the conventional device described above. Photomask protection @ (Lull is the support frame (1
1) A plurality of small ventilation holes +121 are provided on the side portion of the housing 1), which penetrate inside and outside. These small holes have a diameter of, for example, 5
It has a micro diameter of 00μ or less, and has a large tapered hole on the outside.
上記保饅装@ (101を7オトマスク(5)のガラス
基板(6)上に接着剤(4)で接着している。The above-mentioned candy packaging @ (101) is adhered to the glass substrate (6) of the 7 otomask (5) with an adhesive (4).
上記一実施例の装置において、支持枠(11)に設けた
微小径の通気***咥により、フォトマスク保護装置−内
は外気とは、温度や湿度の差がなくなる。In the device of the above-mentioned embodiment, the small diameter ventilation hole provided in the support frame (11) eliminates the difference in temperature and humidity between the inside of the photomask protection device and the outside air.
これにより、透明保護板に結露が生じたり、ひずみが発
生したシすることがなくなる。また、通気***(12)
は微小径であり、外部からのじんあいの侵入を阻止して
おり、外方が大きいテーパ穴にすることにより、いっそ
う防じん効果があげられる。This prevents dew condensation or distortion from occurring on the transparent protective plate. Also, ventilation holes (12)
The diameter of the hole is minute and prevents dust from entering from the outside, and by making the hole larger on the outside, the dust prevention effect can be further improved.
なお、上記実施例では通気***021をテーパ穴にした
が、テーパのない通気***にしてもよい。また、通気小
穴を外方高さに対し内方位置を高くして傾斜してあけ、
しんあし:侵入防止効果をあけるようにしてもよい。In the above embodiment, the ventilation hole 021 is made into a tapered hole, but it may be made into a non-tapered ventilation hole. In addition, the ventilation holes are made at an angle with the inner position higher than the outer height.
Shinfoot: The intrusion prevention effect may be increased.
さらに、上記実施例ではホトマスクとして、マスタマス
クの場合を説明したが、ステップアンドリピート用のレ
ディクルマスクにも適用でき、この場合は、ガラス基板
の両面にそれぞれフォトマスクの保護装置を接着する。Further, in the above embodiment, a master mask is used as the photomask, but it can also be applied to a step-and-repeat redicle mask. In this case, photomask protection devices are bonded to both sides of the glass substrate.
以上のように、この発明によれば、保護装置の支持枠に
内外に貫通する複数の通気***を設けたので、内外気の
温度や湿度の差がなくなり、透明保護板に露滴付着やひ
ずみ発生が防止され、正確なパターンの転写ができる。As described above, according to the present invention, the support frame of the protective device is provided with a plurality of ventilation holes penetrating the inside and outside, thereby eliminating the difference in temperature and humidity between the inside and outside air, and preventing dew droplets from adhering to the transparent protective plate and distortion. This prevents the occurrence of the pattern and enables accurate pattern transfer.
第1図は従来のフォトマスクの保護装置を示す縦断面図
、纂2図は第1図の装「【の斜視図、第3図はこの発明
の一実施例によるフォトマスクの保護装置を示す縦断面
図444図は第3図の執[の斜視図でるる。
図において、3・・・透明保護板、4・・・接着剤、5
・・・フォトマスク、6・・・ガラス基板、)・・・薄
膜パターン、lO・・・フォトマスクの保護装置、11
・・・支持枠、12・・・通気***。
なお、図中同一符号は同−又は相当部分を示す。
代理人 大 岩 垢 雄
第1図
第2図
第3図
第4図
昭和 年 月 日
1、事件の表示 特願昭58−:L321i!!$39
2・発明ノ名称 露光用フォトマスクの保護装置3、補
正をする者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁目2番3号名 称
(601)三菱電機株式会社
代表者片山仁八部
4、代理人
6、補正の対象
明細書の「発明の詳細な説明」の欄。
6、補正の内容
(1) 明細書第4ページ第14行の「***(至)」を
「***(6)」に補正する。
(2) 明細書第5ページ第12行の「ホトマスク」を
「フォトマスク」に補正する。
以上FIG. 1 is a vertical sectional view showing a conventional photomask protection device, FIG. 2 is a perspective view of the device shown in FIG. 1, and FIG. 3 is a photomask protection device according to an embodiment of the present invention. The vertical cross-sectional view 444 is a perspective view of the frame shown in FIG.
... Photomask, 6... Glass substrate, )... Thin film pattern, lO... Photomask protection device, 11
...Support frame, 12...Vent hole. Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Sakuo Oiwa Figure 1 Figure 2 Figure 3 Figure 4 Showa Year, Month, Day 1, Indication of the case Patent application 1984-: L321i! ! $39
2. Title of the invention: Protective device for photomasks for exposure 3. Relationship with the case of the person making the amendment Patent applicant address: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name:
(601) Mitsubishi Electric Corporation Representative Hitoshi Katayama 4, Agent 6, "Detailed Description of the Invention" column of the specification to be amended. 6. Contents of amendment (1) "Small hole (to)" in the 14th line of page 4 of the specification is corrected to "small hole (6)." (2) Correct "Photomask" in the 12th line of page 5 of the specification to "Photomask". that's all
Claims (1)
る複数の通気***が設けられた支持枠と、この支持枠の
上部に固着され上記開口部を覆う透明保護板とを備え、
フォトマスクの両面のうち少なくとも、パターンが施さ
れである上面側の外周寄りに上記支持枠の下部を当て接
着したことを特徴とする露光用フォトマスクの保護装置
。 (2)通気***は外方が大きいテーパ穴からなることを
特徴とする特許請求の範囲第1項記載の露光用フォトマ
スクの保護装置。 (3)通気***は内方位置を外方位置より高くして傾斜
して設けたことを特徴とする特許請求の範囲第1項又は
第2項記載の露光用フォトマスクの保護装置。[Claims] tll A support frame that is open at the top and bottom and has a plurality of small ventilation holes in the sides that penetrate inside and outside, and a transparent protection that is fixed to the top of the support frame and covers the openings. It is equipped with a board,
A protection device for a photomask for exposure, characterized in that the lower part of the support frame is applied and bonded to at least the outer periphery of the upper surface side of the photomask, which is patterned. (2) The protection device for a photomask for exposure according to claim 1, wherein the ventilation small hole is a tapered hole with a large outer side. (3) The protection device for an exposure photomask according to claim 1 or 2, wherein the ventilation holes are provided at an angle with the inner position higher than the outer position.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58132253A JPS6022130A (en) | 1983-07-18 | 1983-07-18 | Device for protecting photomask for exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58132253A JPS6022130A (en) | 1983-07-18 | 1983-07-18 | Device for protecting photomask for exposure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6022130A true JPS6022130A (en) | 1985-02-04 |
Family
ID=15076947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58132253A Pending JPS6022130A (en) | 1983-07-18 | 1983-07-18 | Device for protecting photomask for exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6022130A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07175206A (en) * | 1994-04-14 | 1995-07-14 | Hitachi Ltd | Pellicle |
JPH09204038A (en) * | 1996-09-24 | 1997-08-05 | Hitachi Ltd | Production of mask |
JP2010175618A (en) * | 2009-01-27 | 2010-08-12 | Shin-Etsu Chemical Co Ltd | Pellicle for photolithography |
-
1983
- 1983-07-18 JP JP58132253A patent/JPS6022130A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07175206A (en) * | 1994-04-14 | 1995-07-14 | Hitachi Ltd | Pellicle |
JPH09204038A (en) * | 1996-09-24 | 1997-08-05 | Hitachi Ltd | Production of mask |
JP2010175618A (en) * | 2009-01-27 | 2010-08-12 | Shin-Etsu Chemical Co Ltd | Pellicle for photolithography |
EP2211231A3 (en) * | 2009-01-27 | 2012-07-18 | Shin-Etsu Chemical Co., Ltd. | Pellicle for photolithography |
TWI461841B (en) * | 2009-01-27 | 2014-11-21 | Shinetsu Chemical Co | Pellicle for lithography |
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