JPS6148706B2 - - Google Patents
Info
- Publication number
- JPS6148706B2 JPS6148706B2 JP2542380A JP2542380A JPS6148706B2 JP S6148706 B2 JPS6148706 B2 JP S6148706B2 JP 2542380 A JP2542380 A JP 2542380A JP 2542380 A JP2542380 A JP 2542380A JP S6148706 B2 JPS6148706 B2 JP S6148706B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- photomask
- shape
- right angles
- corner portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000006378 damage Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 本発明はフオトマスクに関する。[Detailed description of the invention] The present invention relates to photomasks.
近年高解像、高品質、長寿命等を特徴とするフ
オトマスク材料として、透明なガラス等の上に約
0.6μ〜２μ位の厚さにクロム等の金属膜を形成
したメタル基板が広く使用されている。しかる
に、その使用に於て、例えば、マスタマスクから
ワーキングマスクを製造する際、また、ワーキン
グマスクをウエハーに転写する際の様に、上記メ
タル基板を用いて製造したフオトマスクを他のメ
タル基板に密着転写を行なう場合、帯電する静電
気の放電により、形成されているフオトマスクパ
ターンが破壊される事がある。 In recent years, as a photomask material featuring high resolution, high quality, and long life, it has become possible to
Metal substrates on which a metal film of chromium or the like is formed to a thickness of about 0.6 μm to 2 μm are widely used. However, in its use, for example, when manufacturing a working mask from a master mask or when transferring a working mask to a wafer, a photomask manufactured using the metal substrate described above must be closely attached to another metal substrate. When performing transfer, the formed photomask pattern may be destroyed due to the discharge of static electricity.
この静電破壊によるパターン欠損は非常に大き
く、且つ広範囲に及ぶため、一度発生するとその
フオトマスクは即座は使用不可能なものとなり、
メタルマスクの長寿命という特徴は著るしく損わ
れる。そのため、静電破壊防止は重要な課題とな
つており、一部には前記ガラス等の基板と金属膜
との間に透明導電膜を形成し、帯電防止を考慮し
たフオトマスク用基板も発表されているが高コス
トになるのみならず従来のフオトマスク製造方法
を一部変更する事も必要とされ、その実用化は困
難であつた。 Pattern defects caused by electrostatic damage are extremely large and widespread, so once they occur, the photomask becomes unusable immediately.
The long life characteristic of metal masks is significantly impaired. Therefore, prevention of electrostatic damage has become an important issue, and some photomask substrates have been announced in which a transparent conductive film is formed between the glass substrate and the metal film to prevent static electricity. However, it is not only expensive but also requires some changes to the conventional photomask manufacturing method, making it difficult to put it into practical use.
本発明は以上述べた様な問題に鑑み形成するチ
ツプのコーナー部及びチツプの内部に形成するパ
ターンのコーナー部の形状を隣接する他のパター
ンの形状及び位置関係を考慮し、必要に応じてパ
ターン設計時に直角としない事で基板及び製造方
法を何等変更する事なく密着露光によるパターン
の静電破壊を防止出来るフオトマスクを提供する
ものである。 In view of the above-mentioned problems, the present invention takes into consideration the shape and positional relationship of other adjacent patterns, and adjusts the shape of the corner portion of the chip to be formed and the corner portion of the pattern formed inside the chip, as necessary. The purpose of the present invention is to provide a photomask that can prevent electrostatic damage to the pattern due to contact exposure without making any changes to the substrate or manufacturing method by not making the pattern at right angles during design.
先ず、従来のチツプの内部のパターンコーナー
部の形状例を第１図に、また第２図に静電気によ
るパターン破壊の例を示す。 First, FIG. 1 shows an example of the shape of a pattern corner inside a conventional chip, and FIG. 2 shows an example of pattern destruction due to static electricity.
第１図に於て、１は形成されたパターンであ
り、金属膜が残つている領域また２は金属膜が除
去され、ガラス等の透明基板が露出している領域
を示す。以下他図に於ても同様である。 In FIG. 1, numeral 1 indicates a formed pattern, and numeral 2 indicates an area where the metal film remains, and numeral 2 indicates an area where the metal film has been removed and a transparent substrate such as glass is exposed. The same applies to other figures below.
今日、フオトマスクの製造は設計されたパター
ンをもとに、作成されたパターンデータを用い
て、自動作画装置、パターンジエネレータ等の製
造装置により、転写及び縮写等を繰り返して行な
われる事は周知の通りである。その際、従来はそ
れら製造設備等の制約により、夫々のパターンの
コーナー部の形状は第１図に示す様に直角に設計
されていた。この場合、現在のフオトマスク製造
工程によればパターンコーナー部の形状は僅かに
丸みを生ずるがその大きさは１μ以下であり、ほ
ぼ設計通り直角に形成される。そのため、コーナ
ー部には電荷が集中し、隣接する他のパターンの
コーナー部に近接している場合、その部分に顕著
に放電が起こり、第２図に示す様なパターン破壊
が発生していた。 Today, it is well known that the production of photomasks involves repeated transfers and reductions based on a designed pattern and using created pattern data using manufacturing equipment such as automatic drawing equipment and pattern generators. That's right. In this case, conventionally, due to restrictions on manufacturing equipment, the shapes of the corner portions of each pattern were designed to be at right angles, as shown in FIG. In this case, according to the current photomask manufacturing process, the shape of the pattern corner portion is slightly rounded, but its size is less than 1 μm, and it is formed at right angles almost as designed. Therefore, charges are concentrated in the corner portion, and when the corner portion is close to the corner portion of another adjacent pattern, significant discharge occurs in that portion, resulting in pattern destruction as shown in FIG. 2.
第３図はパターンコーナー部の直角を設計時に
切り取つた例、第４図は同、円形にした例であ
る。当然の事ながら、これら切り取る又は円形に
する部分の大きさは前述の製造工程上出来るもの
と異なり、約４〜５μあるいはそれ以上と、非常
に大きいものである。 FIG. 3 shows an example in which the right angles of the pattern corner portions are cut out at the time of design, and FIG. 4 shows an example in which the pattern corners are made circular. Naturally, the size of these cut or circular parts is different from what can be achieved in the manufacturing process described above, and is very large, about 4 to 5 microns or more.
この様にパターンコーナー部の形状を必要に応
じて直角としない様設計する事により、電荷の集
中をなくし容易にパターンの静電破壊を防止出来
た。 In this way, by designing the shape of the corner portion of the pattern so that it is not at right angles as necessary, it is possible to eliminate the concentration of charge and easily prevent electrostatic damage to the pattern.
以上、チツプの内部のパターンを例に説明した
が、通常、チツプのコーナー部も同様に直角で設
計されており、一枚のフオトマスクに複数個のチ
ツプを形成した場合、隣接するチツプ間でも同様
なパターン破壊が発生していたが、チツプコーナ
ー部の形状を本実施例と同様、直角としない事に
より静電破壊を防止出来た。 The above has been explained using the internal pattern of a chip as an example, but the corners of the chip are usually designed with right angles as well, and when multiple chips are formed on a single photomask, the same pattern is applied between adjacent chips. Although some pattern destruction occurred, electrostatic damage could be prevented by making the shape of the chip corner part not at right angles as in this embodiment.
尚、本発明の実施例で示した様にパターンコー
ナー部を直角としない様に設計しても、今日では
そのパターン形成に際し、フオトマスク製造装置
等の制約は何等受けない。 Incidentally, even if the pattern corner portions are designed not to be at right angles as shown in the embodiments of the present invention, today, the pattern formation is not subject to any restrictions of photomask manufacturing equipment or the like.
以上述べた様に、本発明によれば密着露光によ
るフオトマスクパターンの静電破壊を現状の製造
装置、フオトマスク材料、及び製造方法を何等変
える事なく、容易に防止出来、メタルマスクの利
点である長寿命を保つ事が出来る。 As described above, according to the present invention, electrostatic damage to photomask patterns caused by contact exposure can be easily prevented without changing the current manufacturing equipment, photomask materials, and manufacturing methods, which is an advantage of metal masks. It can maintain a long life.
第１図は従来のパターン形状を示す平面図、第
２図は静電破壊されたパターンを示す平面図、第
３図は本発明の一実施例のパターン形状を示す平
面図、第４図は本発明の他の実施例のパターン形
状を示す平面図。
尚、図において、１…形成されたパターン部で
金属膜が残つている領域、２…金属膜が除去され
ガラス等の透明基板が露出している領域。
FIG. 1 is a plan view showing a conventional pattern shape, FIG. 2 is a plan view showing a pattern damaged by electrostatic discharge, FIG. 3 is a plan view showing a pattern shape according to an embodiment of the present invention, and FIG. FIG. 7 is a plan view showing a pattern shape of another example of the present invention. In the figure, 1...A region where the metal film remains in the formed pattern portion, 2...A region where the metal film has been removed and a transparent substrate such as glass is exposed.
Claims (1)
オトマスクにおいて、相対向するパターンのコー
ナー部に丸みもしくは切欠きを設けたことを特徴
とするフオトマスク。1. A photomask for forming a plurality of patterns on a semiconductor chip, which is characterized in that corners of opposing patterns are rounded or cut out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2542380A JPS56122034A (en) | 1980-02-29 | 1980-02-29 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2542380A JPS56122034A (en) | 1980-02-29 | 1980-02-29 | Photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56122034A JPS56122034A (en) | 1981-09-25 |
| JPS6148706B2 true JPS6148706B2 (en) | 1986-10-25 |
Family
ID=12165540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2542380A Granted JPS56122034A (en) | 1980-02-29 | 1980-02-29 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56122034A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63124904U (en) * | 1987-02-06 | 1988-08-15 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154959U (en) * | 1984-03-23 | 1985-10-16 | ホ−ヤ株式会社 | photo mask pattern |
| JP2892014B2 (en) * | 1988-07-29 | 1999-05-17 | ソニー株式会社 | Light exposure mask and exposure method |
| JP2012169457A (en) * | 2011-02-14 | 2012-09-06 | Ngk Spark Plug Co Ltd | Wiring board manufacturing method |
-
1980
- 1980-02-29 JP JP2542380A patent/JPS56122034A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63124904U (en) * | 1987-02-06 | 1988-08-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56122034A (en) | 1981-09-25 |
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