JPS60211075A - Formation of electrically conductive alloy film pattern - Google Patents
Formation of electrically conductive alloy film patternInfo
- Publication number
- JPS60211075A JPS60211075A JP6795284A JP6795284A JPS60211075A JP S60211075 A JPS60211075 A JP S60211075A JP 6795284 A JP6795284 A JP 6795284A JP 6795284 A JP6795284 A JP 6795284A JP S60211075 A JPS60211075 A JP S60211075A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- alloy
- electrically conductive
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、例えばＭと８１の合金などからなる合金環ｋ
ｍパターンを基体上に形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to an alloy ring made of, for example, an alloy of M and 81.
The present invention relates to a method of forming an m pattern on a substrate.
Ｕ導電膜パターンは半導体装置のＳｉ基板上の配線等に
多く用いられるが、Ａｌがｓｉと合金してアロイスパイ
クが生じ、内部接合を貫通して所望の特性が得られない
ことがある０従って予めＡＪに８１を合金させて導電膜
を形成し、基板の８１が合金するのを防止することが行
われる◇あるいはＡＪはエレクトｐマイグレーシ日ンを
起こしゃすいので、その対策としてＡｌ−Ｃｕ合金ある
いはＡｌ−８ｔ−Ｃｕ合金によシ導電膜を形成すること
もある。このような合金導電膜の形成は、従来蒸着法や
スパッタリング法で行われるのが一般的であった◇しか
しスパッタリング位言うに及ばず、蒸着法でさえも導電
膜の構成原子がかなシ大きな運動エネルギーを持って基
板に衝突するために、基体に損傷を与えるという現象が
あり、特にシリコン基板の場合には基板に作シ込まれて
デバイスの特性を劣化させる問題がある。そのため、蒸
着あるいはスパッタリング工程後に必ずアニール工程を
施さねばならなかった０また、これらの方法で鉱、たと
えマスクを使用しても堆積粒子がマスクの下側にｍｎ込
むため、μｍ１１度の微細なパターンを堆積工程と同時
に形成することは不可能でアシ、堆積後のりソゲラフイ
エ程が必須であった。さらに、例えばＳｔ基板上のＡＡ
！−８１合金導電膜パターンにおいては、基板との界面
における合金組成が重要で１４）、Ｓｉ濃度が高すぎる
と接触抵抗が高くなり、Ｓｉ濃度が低いとアロイスパイ
クの発市咋−ことができないので、この領域の合金組成
を精密に制御しなければならず、それよシ上側の層では
電気抵抗の減少のためむしろ８１濃度の低いことが望ま
しい。しかし従来の方法では、膜中の成分元素濃度をそ
のように微妙に変化させることは困難であった。U conductive film patterns are often used for wiring on Si substrates of semiconductor devices, but aluminum alloys with Si, resulting in alloy spikes that may penetrate internal junctions and prevent desired characteristics from being obtained. A conductive film is formed by alloying 81 with AJ in advance to prevent 81 on the substrate from being alloyed.Alternatively, since AJ tends to cause electro-p migration, an Al-Cu alloy is used as a countermeasure. Alternatively, the conductive film may be formed using an Al-8t-Cu alloy. Formation of such alloy conductive films has conventionally been generally carried out by vapor deposition or sputtering methods◇However, not only sputtering, but even vapor deposition methods require large movements of the constituent atoms of the conductive film. Since it collides with the substrate with energy, there is a phenomenon in which it damages the substrate, and in the case of a silicon substrate in particular, there is a problem that it is etched into the substrate and deteriorates the characteristics of the device. Therefore, an annealing process must be performed after the evaporation or sputtering process.Also, even if a mask is used, the deposited particles get under the mask, making it difficult to create fine patterns of 11 μm. It was impossible to form reeds at the same time as the deposition process, so it was necessary to perform a process of reeding after deposition. Furthermore, for example, AA on the St substrate
! In the -81 alloy conductive film pattern, the alloy composition at the interface with the substrate is important14); if the Si concentration is too high, the contact resistance will be high, and if the Si concentration is low, the alloy spike will not be able to form. The alloy composition in this region must be precisely controlled, and a lower 81 concentration in the upper layer is preferable to reduce electrical resistance. However, with conventional methods, it has been difficult to make such subtle changes in the concentration of component elements in the film.
本発明の目的は、上述の欠点を除去して基体上の合金導
電膜の微細なパターンを基体へ好ましくない影替を及は
すことな〈実施でき、また膜中の成分元素の濃度の微妙
な調整が可能な方法を提供することを目的とする。It is an object of the present invention to eliminate the above-mentioned drawbacks, to make it possible to form a fine pattern of an alloy conductive film on a substrate without causing an undesirable effect on the substrate, and to make it possible to improve the fineness of the concentration of component elements in the film. The purpose is to provide a method that allows for precise adjustment.
本発明は、基体表面に合金成分元素のすべてを含む反応
ガスを接触させ、所期の導電膜パターンと同一の透光パ
ターンを有するマスクを通して反応エネルギーを与える
光を基体上に照射することによシ、反応ガスよシ合金導
電膜を基体上に成長させることによって上記の目的を達
成するものである。照射光としては、必要な反応エネル
ギーに対応する波長よシ短いが、吸収が著しくなる＃１
ど短くない光が望ましく、そのため１０００〜６０００
Ａの波長の可視乃至紫外領域の光が有効に用いられる。In the present invention, the surface of the substrate is brought into contact with a reactive gas containing all of the alloy component elements, and the substrate is irradiated with light that imparts reaction energy through a mask having the same light-transmitting pattern as the intended conductive film pattern. The above object is achieved by growing a conductive alloy film on a substrate using a reactive gas. The wavelength of the irradiation light is shorter than that corresponding to the required reaction energy, but the absorption is significant. #1
It is desirable to have a light that is not too short, so 1000 to 6000
Light of wavelength A in the visible to ultraviolet region is effectively used.
以下、本発明の実施のための装置を示す第１図を引用し
てシリコン基板上の酸化シリコン膜の上にシリコン合有
アルミニウム配線パターンを形成する実施例について説
明する０１μｍ厚さの酸化シリコン膜を被着したシリコ
ン基板１を反応室２内に収容し、その直上１■の位置に
マスク３を配置する・マスク３は、例えば石英板にクロ
ム膜３１を遮光部とする透光パターンが所望の配線パタ
ーンと同一形状を有するものである。反応室２内を真空
ポンプ４により排気し、他側よシマ４赤ン７ ’ローメ
ータ５によシ流量制御された１ ００ ｍｌ／―のＡＪ
（ＣＨ３） ｓガスをボンベ６よシ、１０ｍ１／ｍの
ＳｉＨ４ガスをボンベ７より、またキャリヤガスとして
３０００ｍＡｔ／―のＨｅガスをボンベ８より導入して
１００’ｌ’ｏｒｒ前後の圧力に保つ。そこへＡｒＦエ
キシマレーザの波長１９３０Ｘの発振光９を鏡１０、レ
ンズ１１を経てマスク３を通して基板１上に５風肩のパ
ワー密度で焦点を結ぶように入射させる。マスク位置で
のパワー密度は、基板上でのパワー密度の１名。以下と
低いため、反応生成物はマスク３の上に紘堆積せず、シ
リコン基板１の上にのみマスクの透光パターン過多の１
％のシリコンを含むアルミニウム・シリコン合金からな
る配線パターンが形成される。Hereinafter, an example of forming a silicon-containing aluminum wiring pattern on a silicon oxide film on a silicon substrate will be described with reference to FIG. 1 showing an apparatus for carrying out the present invention. The silicon substrate 1 coated with the silicon substrate 1 is placed in the reaction chamber 2, and the mask 3 is placed directly above it at a position 1. The mask 3 is preferably a light-transmitting pattern, for example, a quartz plate with a chromium film 31 as a light-shielding part. It has the same shape as the wiring pattern. The inside of the reaction chamber 2 was evacuated by a vacuum pump 4, and the flow rate was controlled by an AJ of 100 ml/- by a low meter 5 on the other side.
(CH3) S gas is introduced from cylinder 6, SiH4 gas of 10 m1/m is introduced from cylinder 7, and He gas of 3000 mAt/- is introduced as a carrier gas from cylinder 8, and the pressure is maintained at around 100'l'orr. The oscillation light 9 of ArF excimer laser having a wavelength of 1930X is made incident on the substrate 1 through a mirror 10, a lens 11, and a mask 3 so as to be focused at a power density of 5 degrees. The power density at the mask position is one person of the power density on the board. Because the reaction product is as low as
A wiring pattern made of an aluminum-silicon alloy containing 50% silicon is formed.
本発明は上記の実施例にとどまらず、使用ガス、使用光
源を変えることによＬＡＸ−８１−Ｃｕ合金、Ｍ−Ｃｕ
合金あるいはその他の各種金属の組合せからなる合金の
導電膜パターンを容易に形成することができる。反応ガ
スとしては、各成分金属をそれぞれ構成元素とするアル
キル金属ガスを混合することが有効である０膜厚方向に
おいて合金成分濃度を変化させようとするときは、各成
分金属に対する配合ガスの混合比、すなわち流量比を調
整することにより容易に可能である。The present invention is not limited to the above-mentioned embodiments, but can be applied to LAX-81-Cu alloy, M-Cu alloy, etc. by changing the gas and light source used.
A conductive film pattern made of an alloy or a combination of various other metals can be easily formed. As a reaction gas, it is effective to mix alkyl metal gases each having each of the component metals as constituent elements.0 When trying to change the alloy component concentration in the film thickness direction, mixing the gas mixture for each component metal is effective. This is easily possible by adjusting the ratio, that is, the flow rate ratio.
本発明は、所望パータンを透光パターンとするマスクを
透過した光を励起光源とする光ＣＶＤを用いて微細な合
金導電膜パターンも堆積と同時に形成可能にしたもので
、合金の構成原子が基体に衝突しないので損傷を与える
こともなく、また生ずる導電膜祉段差被覆性が優れてい
るため、半導体装置をはじめ各種製品の製造に極めて有
効に適用できる。The present invention makes it possible to form a fine alloy conductive film pattern at the same time as deposition using optical CVD using light transmitted through a mask with a desired pattern as a light-transmitting pattern as an excitation light source. Since it does not collide with other objects, it does not cause damage, and the resulting conductive film has excellent step coverage, so it can be extremely effectively applied to the manufacture of various products including semiconductor devices.
第１図は本発明の一実施例のための装置の断面図である
。
１・・・・・・シリコン基板、２・・・・・・反応室、
３・・・・・・マスク、３１・・・・・・クロム膜、６
・・・・・・ｋｌ （ＣＨ３） ３ボンベ、７・・・・
・・Ｓ ｉＨ４ボンベ、８・・・・・・Ｈｅボンベ、９
・・・・・・ＡｒＦエキシマレーザ光。FIG. 1 is a cross-sectional view of an apparatus for one embodiment of the invention. 1...Silicon substrate, 2...Reaction chamber,
3...Mask, 31...Chromium film, 6
...kl (CH3) 3 cylinders, 7...
...SiH4 cylinder, 8...He cylinder, 9
...ArF excimer laser light.
Claims (1)
接触させ、所期の導電膜パターンと同一の透光パターン
を有するマスクを通して反応エネルギーを与える光を基
体上に照射することによル、反応ガスよシ合金導電膜を
基体上に成長させることを特徴とする合金導電膜パター
ンの形成方法。 ２、特許請求の範囲第１項記載の方法において、照射さ
れる光が１０００ないし５ｏｏｏＡの波長を有する可視
ないし紫外光であることを特徴とする合金導電膜パター
ンの形成方法◇[Claims] 1) Contacting the surface of the substrate with a reactive gas containing all of the alloy component elements, and irradiating the substrate with light that imparts reaction energy through a mask having a transparent pattern identical to the intended conductive film pattern. 1. A method for forming an alloy conductive film pattern, which comprises growing an alloy conductive film on a substrate using a reactive gas. 2. A method for forming an alloy conductive film pattern according to claim 1, wherein the irradiated light is visible to ultraviolet light having a wavelength of 1000 to 500A.◇
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6795284A JPS60211075A (en) | 1984-04-05 | 1984-04-05 | Formation of electrically conductive alloy film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6795284A JPS60211075A (en) | 1984-04-05 | 1984-04-05 | Formation of electrically conductive alloy film pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60211075A true JPS60211075A (en) | 1985-10-23 |
| JPH0114314B2 JPH0114314B2 (en) | 1989-03-10 |
Family
ID=13359791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6795284A Granted JPS60211075A (en) | 1984-04-05 | 1984-04-05 | Formation of electrically conductive alloy film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60211075A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0255454A2 (en) * | 1986-07-26 | 1988-02-03 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
-
1984
- 1984-04-05 JP JP6795284A patent/JPS60211075A/en active Granted
Non-Patent Citations (2)
| Title |
|---|
| LASER PHOTO DEPOSITION OF METAL FILMS WITH MICROSCOPIC FEATURES T. F. DEUTSCH ETAL=1979 * |
| VACCUM ULTRAVIOLET DRIVEN CHEMICAL VAPOR DESPOSITION OF LOCALIZED ALUMINUM THIN FILMS A. R. CALLOWAY. ET AL=1983 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0255454A2 (en) * | 1986-07-26 | 1988-02-03 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0114314B2 (en) | 1989-03-10 |
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