JPS6020895B2 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS6020895B2 JPS6020895B2 JP52067157A JP6715777A JPS6020895B2 JP S6020895 B2 JPS6020895 B2 JP S6020895B2 JP 52067157 A JP52067157 A JP 52067157A JP 6715777 A JP6715777 A JP 6715777A JP S6020895 B2 JPS6020895 B2 JP S6020895B2
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- photosensitive resin
- semiconductor device
- bonding
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Wire Bonding (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置の製造方法、特に半導体ゥェハ基板
をはりつけ基板にはりつけて半導体個片装置に機械的分
離切断する製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device, in which a semiconductor wafer substrate is bonded to a substrate and mechanically separated and cut into individual semiconductor devices.
従来、半導体ウェハ基板を個片装置する場合、ガラス基
板や石英基板等の硬い透明な材質基板に接着剤やワック
ス剤を用いてはりつけて固定化し、しかる後ダィシング
装置を用いて各個片装置寸法に切断し、所定外部端子に
実装基板（リードフレーム）の電極リードをボンディン
グ接続し、該接続済み個片装置の接着剤又はワックス剤
を溶解除去して実装組立て処理を完了していた。Conventionally, when semiconductor wafer substrates are made into individual pieces, they are fixed by gluing them onto a hard transparent material substrate such as a glass substrate or a quartz substrate using adhesive or wax, and then a dicing machine is used to cut each piece into the size of the individual pieces. After cutting, the electrode leads of the mounting board (lead frame) are bonded to predetermined external terminals, and the adhesive or wax on the connected individual devices is melted and removed to complete the mounting assembly process.
しかしながら、上記万法によると多くの欠点が存在する
ために、半導体装置の製造歩蟹りの低下と品質低下を生
じていた。例えば、はりつけ剤を用いて個定基板をはり
つけ処理する際に半導体ゥェハ基板表面に押しつけて該
はりつけ剤を均一膜厚且つ脱泡処理するため表面の金属
膜回路配線網に傷を生じ断線不良や短絡不良を生ずる。
一方、談はりつけ剤は加熱融解してはりつけ処理するた
め、前記ボンディング時の加圧力、加熱温度等で再び融
解が生じ、該個片化装置側面をはりつけ剤がせり上り現
象を生じてボンディング面の強度特性を劣化させ、更に
は高温ボンディング温度のために個片化装置裏面に該は
りつけ剤が炭化現象を生じて完全除去が不可能になり、
該装置裏面部への半田付け処理において接着不良を生ず
る。また別の欠点として、通常、該種はりつけ剤の厚さ
は１０〜２０仏ｍを用いるため、ダィシング切断する際
のダィシング歯は個定基板を切り込むように切断しなけ
ればならず、個定基板が固いガラスや石英材のために該
ダィシング歯の寿命が短く該種装置の製品化コストを上
昇させていた。本発明の目的は、前記はりつけ剤として
膜厚の厚い粘着性のある且つ光重合をする乾式感光性樹
脂膜（ドライフオトフィルム）を用いることにより、上
記の欠点を除去し、半導体ウェハ基板の個片化分離切断
作業性を向上させ、はりつけ剤のせり上り現象を解消し
、ボンディング実装時の接着性維持を計り、ダィシング
歯の寿命を保持して製品コストの上昇を防ぐ製造方法を
提供することにある。However, the above-mentioned method has many drawbacks, resulting in slow manufacturing steps and quality deterioration of semiconductor devices. For example, when bonding individual substrates using a bonding agent, the bonding agent is pressed against the surface of the semiconductor wafer substrate to ensure a uniform film thickness and remove bubbles, which may cause damage to the metal film circuit wiring network on the surface, resulting in disconnection or disconnection. This will cause a short circuit failure.
On the other hand, since the bonding agent is heated and melted during the bonding process, it melts again due to the pressure and heating temperature during bonding, and the bonding agent rises up the side of the singulation device, causing the bonding surface to deteriorate. In addition, due to the high bonding temperature, the bonding agent causes carbonization on the back side of the singulation device, making it impossible to completely remove it.
Adhesion failure occurs during the soldering process to the back side of the device. Another drawback is that the thickness of the seed bonding agent is usually 10 to 20 mm, so the dicing teeth must cut into the individual substrates when dicing. Since the dicing teeth are made of hard glass or quartz, the lifespan of the dicing teeth is short, which increases the manufacturing cost of this type of device. An object of the present invention is to eliminate the above-mentioned drawbacks and improve the individuality of semiconductor wafer substrates by using a thick, sticky, photopolymerizable dry photosensitive resin film (dry photofilm) as the gluing agent. To provide a manufacturing method that improves the workability of fragmentation, separation, and cutting, eliminates the rising phenomenon of gluing agent, maintains adhesion during bonding mounting, maintains the life of dicing teeth, and prevents an increase in product costs. It is in.
本発明は、素子電極と回路配線を形成した半導体ウェハ
基板の裏側に乾式感光性樹脂膜を介在して個定基板に熱
圧着する工程と、所定の個片分離領域に沿って機械的切
断をして前記半導体ウェハ基板の全厚さと茂式感光性樹
脂膜の表面から一定の厚さのみを切断する工程と、個片
分離切断した半導体個片装置の外部接続端子に実装基板
の電極リードをボンディング接続する工程と、該実装基
板の電極リードを上方に引き上げることにより個片装置
を乾式感光性樹脂膜面から離脱する工程とから成る半導
体装置の製造方法である。The present invention involves a step of thermally pressing a dry photosensitive resin film on the back side of a semiconductor wafer substrate on which element electrodes and circuit wiring have been formed and bonding it to an individual substrate, and mechanical cutting along a predetermined separation area. A step of cutting only a certain thickness from the entire thickness of the semiconductor wafer substrate and the surface of the Shigeru style photosensitive resin film, and connecting the electrode leads of the mounting board to the external connection terminals of the semiconductor chip device that has been cut into individual pieces. This method of manufacturing a semiconductor device includes a step of bonding and connecting, and a step of separating the individual devices from the surface of the dry photosensitive resin film by pulling upward the electrode leads of the mounting board.
本発明によると、乾式感光性樹脂膜の被着処理に際して
、該樹脂膜のシートを個定基板と半導体ゥェハ基板の間
に挿入して単に加熱加圧下でラミネート処理するのみで
接着でき、該半導体ウェハ基板表面に傷を生じたり、一
方、はりつけ面に気泡を生ずることが解消でき、生産性
が大幅に向上する。According to the present invention, when applying a dry photosensitive resin film, a sheet of the resin film can be inserted between the individual substrate and the semiconductor wafer substrate and bonded by simply laminating the semiconductor wafer substrate under heat and pressure. This eliminates scratches on the wafer substrate surface and bubbles on the bonding surface, greatly improving productivity.
又、該樹脂膜の厚さが従来のはりつけ剤の１０〜２０山
ｍに対して１００〜２００山ｍに設定できるためダィシ
ング切断時のダィシング歯の入り込みを該樹脂膜の厚さ
内で制御でき、固い個定基板を切断処理することを防げ
るためにダイシング歯の寿命を長時間にわたって保持で
きる。更に別の効果としてボンディング処理時の温度で
融解しないため、加圧力に対して該個片化装置が樹脂膜
内へ沈み込む不良を生ずることなく、又、従来のはりつ
け剤のような側面せり上り現象も生じないため、ボンデ
ィング面の強度特性を維持できる。又、更には、該個片
化装置の裏面部に樹脂膜が融解して付着することをなく
、後作業における半田付処理においてもその半田接着性
を充分維持した製品を作ることが可能になり、該種製品
の品質向上と製造方法の簡略化の効果を得ることができ
る。次に本発明について図面を参照して説明する。尚、
説明の都合上、バンプ型半導体装置の場合で示し、拡散
素子領域や回路配線領域については省略した。第１図な
いし第４図は本発明の一実施例のバンプ型半導体装置の
個片化分離に係る製造方法を示す断面図であり、主面の
シリコン酸化膜１上に設けたバンプ端子２を有するシリ
コン基板３を石英板やガラス板等の透明材料の個定基板
４１こ乾式感光性樹脂膜５を介して１００℃位の加熱と
加圧のラミネート処理で該両者を固着する。In addition, since the thickness of the resin film can be set to 100 to 200 m, compared to the 10 to 20 m of conventional adhesives, the penetration of the dicing teeth during dicing can be controlled within the thickness of the resin film. Since it is possible to prevent cutting of hard individual substrates, the life of the dicing teeth can be maintained for a long time. Another effect is that because it does not melt at the temperature during the bonding process, the singulation device does not sink into the resin film due to the pressure applied, and it does not cause the side surfaces to rise like conventional bonding agents. Since no phenomenon occurs, the strength characteristics of the bonding surface can be maintained. Furthermore, the resin film does not melt and adhere to the back side of the singulation device, and it is possible to produce products that maintain sufficient solder adhesion even during post-soldering processing. , it is possible to obtain the effects of improving the quality of the product and simplifying the manufacturing method. Next, the present invention will be explained with reference to the drawings. still,
For convenience of explanation, a case of a bump-type semiconductor device is shown, and the diffusion element region and circuit wiring region are omitted. 1 to 4 are cross-sectional views showing a manufacturing method for singulating and separating a bump-type semiconductor device according to an embodiment of the present invention, in which bump terminals 2 provided on a silicon oxide film 1 on the main surface are A silicon substrate 3 having the same structure is attached to an individual substrate 41 made of a transparent material such as a quartz plate or a glass plate, and the two are fixed together through a dry photosensitive resin film 5 through a lamination process of heating at about 100° C. and applying pressure.
上記加熱により乾式感光性樹脂膜は適度に粘着性が増し
て、両者の固着が容易になる。この場合、個片化領域を
表わすため絶縁膜１に溝６を幅ｗ，に設定しておくと良
い。該感光性樹脂膜５の厚さｔ・は例えばデュポン社製
リストン膜１００山ｍ材を用いると良い（第１図）。次
にダィシング装置を用いて前記個片化領域溝６の幅ｗ，
に沿って機械的切断加工を施し、シリコン基板３を幅松
寸法で切断する。この時、切断溝７は該感光性樹脂膜５
の厚さｔ，を全部切断することなくその途中の厚さｔ２
で停止するように制御する。即ちｔ，＞ｔ２でちニ１０
０仏ｍの時、らニ７０〜８０〃ｍに再現できると、２０
〜３０仏ｍの厚さを残して切断制御されることになる。
尚、この際ｗ，ニ３０仏ｍとしダィシング歯厚ニ３０〃
ｍとすると切削しろが溝部片側で１０〜１５仏ｍ発生す
るので叫ニ５０〜６０ムｍになる（第２図）。続いて実
装基板８から延出した電極リード９をバンプ端子２とボ
ンディング接続する。通常ボンディング処理時には加熱
処理するが、例えば２５０〜３５０ｑｏで処理すると従
来方法でははりつけ剤がワックス等であったために融解
してシリコン基板３の側面をせり上ってバンプ面あるい
は他領域面に付着してボンディング強度特性を劣化せし
めたが、該方法では、乾式感光性樹脂膜５が融解するこ
となく固形状で存在するため正常なボンディング実装が
可能になる（第３図）。また、上記ボンディング時の熱
処理により、乾式感光性樹脂膜の表面が炭化されて粘着
性が減少する。最後に、該ボンディング済個片化装置を
上方に引き抜くと該装置裏面にはワックス材等の汚れの
ない状態で実装が完了する（第４図）。上記方法を繰返
し作業することで半導体ウェハ基板内の所定の個片化装
置をすべて実装できる。本発明の実施例によると、粘着
性のある厚い膜厚の乾式感光性樹脂膜をシート状にして
連続的にラミネート固着できるため生産性が大幅に向上
し、該ウェハ基板を個片化装置に分離切断する時のダィ
シング溝を該厚い乾式感光性樹脂膜の厚さの途中で制御
することを特徴とするため、ダィシング歯が硬い石英基
板に到達することを防ぎ、該種歯材の寿命を保持し、生
産コストを低減させ得る。The above-mentioned heating increases the adhesiveness of the dry photosensitive resin film to an appropriate extent, making it easier to adhere the two. In this case, it is preferable to set the groove 6 in the insulating film 1 to have a width w to represent the singulation region. For the thickness t of the photosensitive resin film 5, it is preferable to use, for example, Liston film 100 mm material manufactured by DuPont (FIG. 1). Next, using a dicing device, the width w of the singulation region groove 6,
A mechanical cutting process is performed along the lines to cut the silicon substrate 3 to the width of the pin. At this time, the cutting groove 7 is cut into the photosensitive resin film 5.
Without cutting the entire thickness t, the thickness t2 is cut in the middle.
control to stop at . That is, t, > t2 and d10
If it can be reproduced to 70~80〃m when it is 0 Buddha m, then 20
The cutting will be controlled leaving a thickness of ~30 mm.
In addition, at this time, the dicing tooth thickness is 30 m and the dicing tooth thickness is 30 m.
If it is m, the cutting allowance will be 10 to 15 mm on one side of the groove, so the cutting allowance will be 50 to 60 mm (Figure 2). Subsequently, electrode leads 9 extending from the mounting board 8 are connected to the bump terminals 2 by bonding. Normally, heat treatment is performed during the bonding process, but if the process is performed at, for example, 250 to 350 qo, the bonding agent used in the conventional method was wax, etc., so it melts, climbs up the side of the silicon substrate 3, and adheres to the bump surface or other area surfaces. However, in this method, the dry photosensitive resin film 5 does not melt and exists in a solid state, so that normal bonding mounting is possible (FIG. 3). In addition, the heat treatment during bonding carbonizes the surface of the dry photosensitive resin film, reducing its tackiness. Finally, when the bonded singulation device is pulled upward, the mounting is completed with no stains such as wax material on the back surface of the device (FIG. 4). By repeating the above method, all of the predetermined singulation devices within the semiconductor wafer substrate can be mounted. According to the embodiment of the present invention, it is possible to continuously laminate and fix a thick adhesive dry photosensitive resin film in the form of a sheet, which greatly improves productivity, and allows the wafer substrate to be used in a singulation device. The feature is that the dicing groove when separating and cutting is controlled in the middle of the thickness of the thick dry photosensitive resin film, which prevents the dicing teeth from reaching the hard quartz substrate and extends the life of the seed tooth material. can be maintained and reduce production costs.
又、更に、加熱処理を伴ったボンディング実装時にワッ
クス剤等のせり上りがないため、ボンディング面が正常
な清浄度を保持して実装されるため、該接触界面の機械
的強度が充分に制御でき、品質向上を果す。一方、ボン
ディング実装後、該装置裏面部にワックス剤等の融解付
着がないために半田付処理において容易に半田金属の付
着を可能にし、生産性の向上と品質維持を果す大きな効
果をもたらす。以上に本発明について簡単な一実施例を
用いて説明したが、乾式感光性樹脂膜の種類、ラミネー
ト条件、ボンディング条件、及び裏面半田付け材料の種
類等は上記実施例に限定されるものではなく、所要によ
り適宜変更して、本発明を広く半導体装置一般の製法に
適用できることは勿論である。Furthermore, since there is no rise of wax agent etc. during bonding mounting that involves heat treatment, the bonding surface maintains normal cleanliness and is mounted, so the mechanical strength of the contact interface can be sufficiently controlled. , improve quality. On the other hand, since there is no melting or adhesion of wax or the like to the back surface of the device after bonding and mounting, it is possible to easily attach solder metal during the soldering process, which brings about great effects in improving productivity and maintaining quality. Although the present invention has been explained above using a simple example, the type of dry photosensitive resin film, laminating conditions, bonding conditions, type of backside soldering material, etc. are not limited to the above example. It goes without saying that the present invention can be applied to a wide range of manufacturing methods for semiconductor devices in general, with appropriate modifications as necessary.
第１図ないし第４図は本発明の一実施例のバンプ型半導
体装贋の個片化分離に係る製造方法を示す断面図である
。
１・・・・・・シリコン酸化膜、２・・・・・・バンプ
端子、３・・・・・・シリコン基板、４・・・・・・石
英基板、５・・・・・・乾式感光性樹脂膜、６・・…・
分離領域を示したシリコン酸化膜の溝、７…・・・ダィ
シング切断後の分離溝、８…・・・実装基板、９・・・
・・・実装基板から延在した電極り−ド、ｗ，…・・・
シリコン酸化膜の分離領域の幅、池・・・・・・ダィシ
ング切断後の分離領域の幅、ｔ，・・・・・・乾式感光
性樹脂膜の厚さ、ｔ２・・・・・・ダィシング切断後の
乾式感光性樹脂膜の溝部の深さ。
努′図
劣？図
慕う図
多４凶1 to 4 are cross-sectional views showing a manufacturing method for separating bump-type semiconductor devices into individual pieces according to an embodiment of the present invention. 1... Silicon oxide film, 2... Bump terminal, 3... Silicon substrate, 4... Quartz substrate, 5... Dry photosensitive Resin film, 6...
Groove of silicon oxide film showing isolation region, 7... Separation groove after dicing, 8... Mounting board, 9...
...Electrode lead extending from the mounting board, w,...
Width of separation area of silicon oxide film, pond...Width of separation area after dicing, t,...Thickness of dry photosensitive resin film, t2...Dicing Depth of groove in dry photosensitive resin film after cutting. Tsutomu' inferior? I admire Zuta 4 evil
Claims (1)
裏面側を乾式感光性樹脂膜により固定用基板に予め固定
する工程と、前記半導体ウエハ基板の全厚さおよび前記
乾式感光性樹脂膜の表面から一定の厚さのみを機械的に
切断して個片の半導体装置に分離する工程と、前記半導
体装置の外部接続端子に実装基板の電極リードを接続す
る工程と、前記電極リードを引き上げることにより前記
半導体装置を前記乾式感光性樹脂膜から離脱させる工程
を含むことを特徴とする半導体装置の製造方法。1. A step of pre-fixing the back side of a semiconductor wafer substrate on which a plurality of semiconductor devices are formed to a fixing substrate with a dry photosensitive resin film, and determining the total thickness of the semiconductor wafer substrate and the surface of the dry photosensitive resin film. A step of mechanically cutting only a certain thickness to separate the semiconductor device into individual pieces, a step of connecting the electrode lead of the mounting board to the external connection terminal of the semiconductor device, and a step of pulling up the electrode lead to separate the semiconductor device into individual pieces. A method for manufacturing a semiconductor device, comprising the step of separating the semiconductor device from the dry photosensitive resin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52067157A JPS6020895B2 (en) | 1977-06-06 | 1977-06-06 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52067157A JPS6020895B2 (en) | 1977-06-06 | 1977-06-06 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54974A JPS54974A (en) | 1979-01-06 |
| JPS6020895B2 true JPS6020895B2 (en) | 1985-05-24 |
Family
ID=13336771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52067157A Expired JPS6020895B2 (en) | 1977-06-06 | 1977-06-06 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6020895B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6322191U (en) * | 1986-07-26 | 1988-02-13 | ||
| JPH0611594U (en) * | 1990-12-17 | 1994-02-15 | 高清産業株式会社 | Toilet seat cover |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4876221A (en) * | 1988-05-03 | 1989-10-24 | Matsushita Electric Industrial Co., Ltd. | Bonding method |
| US5063177A (en) * | 1990-10-04 | 1991-11-05 | Comsat | Method of packaging microwave semiconductor components and integrated circuits |
-
1977
- 1977-06-06 JP JP52067157A patent/JPS6020895B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6322191U (en) * | 1986-07-26 | 1988-02-13 | ||
| JPH0611594U (en) * | 1990-12-17 | 1994-02-15 | 高清産業株式会社 | Toilet seat cover |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54974A (en) | 1979-01-06 |
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