JPS60187187A - Solid-state image pickup device and its driving method - Google Patents
Solid-state image pickup device and its driving methodInfo
- Publication number
- JPS60187187A JPS60187187A JP59043337A JP4333784A JPS60187187A JP S60187187 A JPS60187187 A JP S60187187A JP 59043337 A JP59043337 A JP 59043337A JP 4333784 A JP4333784 A JP 4333784A JP S60187187 A JPS60187187 A JP S60187187A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion elements
- transferred
- ccd
- horizontal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は固体撮像装置およびその駆動方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a solid-state imaging device and a method for driving the same.
従来例の構成とその問題点
固体撮像素子は、撮像管と比較して多くの利点を有する
ため盛んに開発が進められてきた。なかでもインターラ
イン転送方式ＣＣＤ（以下ＩＴ−ＣＣＤと略記する。）
は原理的に低雑音であるため特に有望視されている。Conventional Structures and Problems Solid-state imaging devices have been actively developed because they have many advantages over image pickup tubes. Among these, interline transfer type CCD (hereinafter abbreviated as IT-CCD)
is considered particularly promising because it has low noise in principle.
以下に従来の■Ｔ−ＣＣＤの全体構成図を示す第１図を
用いて説明する。A description will be given below with reference to FIG. 1, which shows the overall configuration of a conventional T-CCD.
この構成において光電変換素子１のそれぞれに蓄７債さ
れた信号電荷は矢印のごとく垂直転送ＣＣＤ２（以下Ｖ
−Ｃ−ＣＤと略記する。）へ転送された後、史に水平
転送ＣＣＤ３ （以下Ｈ−ＣＣＤと略記する。）へ転送
され、電荷検知部４へｌｌｌｌｌ次転送され、検知、出
力される。これがＩＴ−ＣＣＵの基本動作である。この
様に光電変換素子１を正方行列状に配列した場合、素子
の水平解像度はその水平方向の画素数で定まる。例えば
、現状よく使われる水平画素数３８０程度の素子では水
平解像度は２８ＯＴＶ本程度であり、水平解像度の向上
が望捷れている。In this configuration, the signal charges stored in each of the photoelectric conversion elements 1 are transferred to the vertical transfer CCD 2 (hereinafter referred to as V
It is abbreviated as -C-CD. ), then transferred to the horizontal transfer CCD 3 (hereinafter abbreviated as H-CCD), and then transferred to the charge detection section 4, where it is detected and output. This is the basic operation of the IT-CCU. When the photoelectric conversion elements 1 are arranged in a square matrix in this manner, the horizontal resolution of the elements is determined by the number of pixels in the horizontal direction. For example, the horizontal resolution of a currently commonly used device with a horizontal pixel count of about 380 is about 28 OTV lines, and there is great hope for an improvement in the horizontal resolution.
解像度を高める方法としては画素数を増せばよいが、微
細加工技術上の問題や、感度、ダイナミックレンジの低
下といった問題があるため必ずしも簡単に実現できない
。One way to increase resolution is to increase the number of pixels, but this is not always easy to achieve because of problems with microfabrication technology and problems such as reductions in sensitivity and dynamic range.
発明の目的
本発明は、感度、ダイナミックレンジ等の’ｌ’６”ｌ
＜ｌ。Purpose of the Invention The present invention provides improvements in sensitivity, dynamic range, etc.
<l.
を殆んど犠性にすることなく、水平解像度の高いインタ
ーライン転送方式ＣＯＤ固体撮像装置、およびその駆動
方法を提供するものである。The present invention provides an interline transfer type COD solid-state imaging device with high horizontal resolution and a method for driving the same without sacrificing much.
発明の構成
上記目的を達成するためＶこ、本発明は行列状に配列さ
れた複数の光電変換素子の互いに隣接した行に属する前
記光電変換素子の水平方向の位置が互いに異なるように
配置されているとともに垂直転送手段が蛇行状に配置さ
れた固体撮像装置及びその駆動方法であって、少い画素
数で高い水平解像度を得ることができる。Structure of the Invention In order to achieve the above object, the present invention provides a plurality of photoelectric conversion elements arranged in a matrix, in which the photoelectric conversion elements belonging to mutually adjacent rows are arranged such that the positions in the horizontal direction are different from each other. The present invention provides a solid-state imaging device in which vertical transfer means are arranged in a meandering manner, and a method for driving the same, whereby high horizontal resolution can be obtained with a small number of pixels.
実姉例の説明
本発明の一実殉例で垂直画素数６．水平画素数４の場合
の全体構成図を示す第２図を用いて説明する。本実施例
では同図に示すように光電変換素子５を一行おきに水平
方向に半画素分ずらせた配列に在っている。（以下画素
ずらし配列と略記する。）各光電変換素子５に蓄積され
た信号電荷は矢印の如く一斉（ｌこＶ−ＣＣＤ６に転送
された後、更ＶこＨ−ＣＣＤ７へ転送される。このとき
、」二下で力いに隣（とじた工費の光電変換子から得ら
れた信号電荷がＨＣＣＤへ転送され順次電荷検知器８へ
転送され、検知、出力されろ。すなわち、工費分の信号
が一水−ゝ１１１１ＪＪ間中に読み出され、いわゆる同
時工費読み出し法となる。同じ水平画素数の場合画素ず
らし配列では正方配列に比べて、水平方向の空間サンプ
リング１＾Ｊ波数が２倍になり水平庁ｃ像度が大１１ｅ
に向−１ニすることがわかる。Explanation of a practical example This is a practical example of the present invention with a vertical pixel count of 6. This will be explained with reference to FIG. 2, which shows an overall configuration diagram when the number of horizontal pixels is 4. In this embodiment, as shown in the figure, the photoelectric conversion elements 5 are arranged in an array in which every other row is shifted by half a pixel in the horizontal direction. (Hereinafter abbreviated as pixel shifted arrangement.) The signal charges accumulated in each photoelectric conversion element 5 are transferred to the V-CCD 6 and then further transferred to the H-CCD 7 as shown by the arrow. At this time, the signal charge obtained from the photoelectric converter that was closed next to the power source is transferred to the HCCD, and sequentially transferred to the charge detector 8, where it is detected and output. In other words, the signal charge corresponding to the construction cost is It is read out during 1111JJ from 1st water, which is the so-called simultaneous construction cost readout method.For the same number of horizontal pixels, the horizontal spatial sampling 1^J wave number is doubled in the pixel shifted array compared to the square array. The horizontal magnification is 11e.
It can be seen that the direction is -1 d.
この実姉例における更に詳しい構造を示す第３図を用い
て説明する。同図は、六つの光電変換素子を含みｖ−ｃ
ｃＤとして４相駆動埋め込みチ４・ンネルＣＣＯを用い
だ撮像部の一部荀示している。The detailed structure of this actual sister example will be explained using FIG. 3. The figure includes six photoelectric conversion elements, v-c
A portion of the imaging unit is shown using a four-phase drive embedded channel CCO as the CD.
同図で１０はチトンネルストッパー等による分１す１１
領域、１２−１と１２−２は一層目のポリシリコンで形
成され、４相駆動に用いる４つのクロックパルスφ■１
．φ■２．φＶ３ｔφＶ４１のうちのφＶ２が印加され
る転送電極である。同じ（１４−Ｏ。In the same figure, 10 is the division by tunnel stopper etc. 11
Regions 12-1 and 12-2 are formed of the first layer of polysilicon, and four clock pulses φ■1 used for four-phase drive
．． φ■2. Of φV3tφV41, φV2 is the transfer electrode to which voltage is applied. Same (14-O.
１４−１は一層目ポリシリコンで形成され、φＶ４が印
加される転送電極である。１１−１．１１−２及び１３
−１は二層目ポリシリコンで形成され、それぞれφＶ１
．及びφＶ３が印加される。光電変換素子１６，１７．
１８に蓄積されていた信月電荷は、φＶ２？φｖ４を読
み出し用の旨い′重圧状態とすることによって、表面チ
ャンネルゲート領域１９が開き、それぞれ右下の転送電
極１２−１．１４−１．１２−２のチャンネルに転送さ
れる３、このときも実姉例の様に、全ての光電変換素子
Ｇ′こ隣４イシた表「ｒ１１チャンネルゲート領域１９
が同一方向にあると各光′ｉＬ変換変換動らの転送条件
が雪価Ｖこなり、フリッカ−等が発生しにくい。撮像素
子で（ｄ通常垂直解罹度を向上さぜるため（Ｃインター
レース走査を行なう。本実施例では、例えばＡフィール
ドでは光電変換素子１６と１７の二つの行を一水千期間
に読み出し、その次の一水平期間には光′電変換素子１
８とその下の二つの行を読み出すという様に工性ずつを
一水平期間に読み出してゆく。一方Ｂフィールドでは光
電変換素子１６とその上の杓を一水゛ｒ期間中にＨしみ
出１−１次の一水平期間には光電変換素子１７ど１８の
工性を読み出す。以トのよう（ｆこフィールドごとに一
水≦に期間に読み出すに下工費のホ１■み合わせを考え
ることによってインターレース走査を実行する。各光電
変換素子から信づ電荷をＶ−ＣＣＤのチャンネルに転送
する寸では、ＡＢ共同じ駆ｊＪｊυであるが以後のＶ−
ＣＯＤの駆動はフィールドによって異なる。その翳合の
ｊｊ４７動パルスの一例を第４図に示して説明する。同
図で２０ｉ：パフイールドにおける光′屯変摸索イから
の転送１１４２１はＢフィールドにおける光電変換素子
からの転送時、２２ｒ１￥ｒ両方向へ一般転送する時の
ｊ、ｊｉｇ勤パルス例である。パフイールドでｄ。14-1 is a transfer electrode formed of first layer polysilicon and to which φV4 is applied. 11-1.11-2 and 13
-1 is formed of second layer polysilicon, and each φV1
．． and φV3 are applied. Photoelectric conversion elements 16, 17.
The Shinzuki charge accumulated in 18 is φV2? By putting φv4 under a good pressure state for reading, the surface channel gate region 19 opens and the signals are transferred to the channels of the lower right transfer electrodes 12-1, 14-1, and 12-2. As in the real sister example, all the photoelectric conversion elements G'
If they are in the same direction, the transfer conditions for each light 'iL conversion movement will be different from the snow value V, and flicker etc. will be less likely to occur. In this embodiment, for example, in the A field, two rows of photoelectric conversion elements 16 and 17 are read out in a period of 1,000 seconds. In the next horizontal period, the photoelectric conversion element 1
8 and the two lines below it are read out one by one in one horizontal period. On the other hand, in the B field, the photoelectric conversion elements 17 and 18 are read out during one horizontal period of H seepage from the photoelectric conversion element 16 and the ladle thereon during one water period. Interlaced scanning is performed by considering the combination of construction costs to read out each field in a period of ≤ 1 as described below. Charges transmitted from each photoelectric conversion element are transferred to the V-CCD channel. In the dimension transferred to , both AB and JJjυ are the same, but the subsequent
The driving of COD differs depending on the field. An example of the jj47 motion pulse of this combination is shown in FIG. 4 and will be explained. In the same figure, 20i: Transfer from the optical conversion element in the puff field 11421 is an example of j, jig pulses when transferring from the photoelectric conversion element in the B field and general transfer in both directions of 22r1\r. d in puff field.
φＶ２とφＶ４への最大’＠ Ｆ、Ｌの印）７１１時に
光電変換素子から１舌号電荷をφＶ２とφＶ４を印加す
る転送電極のチャンネルに転送した後、φＶ４０チヤン
ネルにあっ／こ伯創電荷を上の行のφＶ２とφＶ３を印
加する電極のチャンネルへ転送する。同じくＢフィール
ドでは光電変換素子から転送した後φ■４が印加される
電極のチャンネルにあったイハ号電荷を一行下のφＶ２
とφＶ３が印加される転送′Ｉ−ｚ極のチャンネルに転
送する。第３図に１２１１１．て説明すると、パフイー
ルドでは転送電極１４−１のチャンネルにある信号電荷
が転送電極１２−１と１３−１のチャンネルに転送され
る。同じくＢフィールドては転送電極１４−１の下にあ
る信−弓電荷か転送電極１２−２及０：１２−２の下の
φＶ３が印加される転送電極のチャンネル（／Ｃ転送さ
れる。このことは転送電極ｊ４−０のチャンネルＶＣあ
る信け１１−ｙ ｉ７ｒか転送電極１２−１と１３−１
のチャンネル（で転送される。このようにパフイールド
と１３フイールドでに１上下に隣接する二つの行の組み
合わせを変えた光電変換素子から得られた（Ｐｊ ”ｉ
７’Ｘ荷がφＶ２とφＶ３が印加される転送電極のチ
ャンネルに蓄積された状態になる。Maximum to φV2 and φV4 (marked by F, L) At 711 hours, after transferring the 1-signal charge from the photoelectric conversion element to the channel of the transfer electrode to which φV2 and φV4 are applied, the φV40 channel receives an A/Kohaku creation charge. φV2 and φV3 in the upper row are transferred to the channels of the applied electrodes. Similarly, in the B field, after being transferred from the photoelectric conversion element, the Ih charge that was in the channel of the electrode to which φ■4 is applied is transferred to φV2 one row below.
and φV3 are applied to the transfer 'I-z pole channel. 12111 in Figure 3. To explain, in the puff field, signal charges in the channel of the transfer electrode 14-1 are transferred to the channels of the transfer electrodes 12-1 and 13-1. Similarly, in the B field, the signal charge under the transfer electrode 14-1 is applied to the transfer electrode channel (/C) to which φV3 under the transfer electrode 12-2 and 0:12-2 is applied. I believe that the channel VC of transfer electrode j4-0 is 11-y i7r or transfer electrodes 12-1 and 13-1.
(Pj ”i
The 7'X charge is accumulated in the channel of the transfer electrode to which φV2 and φV3 are applied.
上Ｖこ述べた実姉例ではＶ−ＣＯＤの最大転送電荷量を
大きくとるためφＶ２とφＶ３が印加される転送電極の
チャンネルに蓄積されているが、φＶ１とφＶ２１φＶ
２とφＶ３１φｖ３とφ！４．φｖ４とφＶ１ とどの
組合わせでもｂＪ能である。In the above example, in order to increase the maximum transfer charge amount of V-COD, φV2 and φV3 are accumulated in the channel of the transfer electrode to which they are applied, but φV1 and φV21φV
2 and φV31φv3 and φ! 4. Any combination of φv4 and φV1 has bJ function.
更に上の紹合わせのそれぞれに対し、Ｖ−ＣＣＤの」°
μ終転送電４；ｋ（Ｈ−ＣＣＤの直前）がそれぞれφＶ
４９φＶ１？φＶ２．φＶ３ ？であれはＶ−ＣＣＤと
Ｈ−ＣＣＤ （Ｄ Ｊｆ２界にＶ−ＣＣＤから、１［−
ＣＣＤ ヘの１１シ；送を制御卸するための渦°別な′
１Ｌｊ（−＋は不安である。Furthermore, for each of the above introductions, V-CCD's
μ final transfer voltage 4; k (just before H-CCD) is φV
49φV1? φV2. φV3? That is V-CCD and H-CCD (D Jf2 field from V-CCD, 1[-
11. Separate vortices for controlling the feed to the CCD
1Lj (-+ means anxiety.
ｉ／ζ最Ｊ（転送電荷）＋４を１“；９す必要がなけれ
ば、φＶ２又はφＶ４だけでもかまわ々い。If it is not necessary to increase i/ζ maximum J (transfer charge) + 4 by 1'', it is sufficient to use only φV2 or φV4.
以上のようにφＶ２とφＶ３にＭ！６された工費分のｆ
計づ電彷Ｊ附、水平帰線期間中に平面方向に一段ずつ転
送さね、るとともにＶ−ＣＣＤの＃終段に蓄積されてい
た信号電荷υよＨ−ＣＣ’ｌ）に転送され、Ｈ−ＣＣＤ
Ｉｙこｊｉすく送さ、１１だ信号電荷は続く一水・１′
−期間に胴次市、４“［検知器へも、送さＪｔて検知出
力される。As mentioned above, M! to φV2 and φV3! 6 f of the construction cost
During the horizontal retrace period, the signal charge υ accumulated in the final stage of V-CCD is transferred to H-CC'l), H-CCD
Iy this is sent quickly, 11 signal charges continue 1 water 1'
- During the period, it was sent to the detector and output as a detection output.
とのように、本発明りこよれは一水乎期間中に素子の水
）１／方向の画素数の２倍のサンフリンク周波数の信−
じかイ好られ水平解像灰が著しく向上する。As shown in the above, the present invention is capable of transmitting a signal with a Sunflink frequency twice as many as the number of pixels in the water direction of the element during one water period.
The horizontal resolution is significantly improved.
」メ十の説明てはＶ−ＣＣＤは４相、駆φｂであったが
２相、駆動でも本発明の主旨に沿った内容汀実現゛２で
きる。また、ポリシリコン二層溝ｊ−４で説明したが、
微Ｓ加工技術上煎しい場合は、例えに１転送電極１１−
１．１１−２は二層目のポリノリコンで形成され、１３
−１ｉｄ二層目のポリシリコンで形成される構造りこし
てもか捷わない。In the above explanation, the V-CCD is a four-phase drive φb, but it is also possible to realize the contents according to the gist of the present invention with a two-phase drive. Also, although it was explained using the polysilicon double layer groove j-4,
If the micro S processing technology is advanced, for example, 1 transfer electrode 11-
1.11-2 is formed from the second layer of polynolycone, 13
-1id The structure formed from the second layer of polysilicon does not deteriorate even if it is reused.
以上の説明はどんな基扱上に素子か形成されでいるかｒ
↓述べていないが、ｐＪＩ！半樽体）ＪＬ板上ＶＣ設け
られたｎチャンネル素子、もしくはｎ塑゛１〈心棒基板
上に形成されたいわゆるｐウェル内に設けら ゛れだｎ
チャンネル素子のどちらもＬｉＪ能である。またこの極
性を逆にしたｐチャンネル素７ももちろん可能である。The above explanation explains on what basis the element is formed.
↓Although not mentioned, pJI! (Half-barrel body) JL N-channel device provided with VC on the board, or n-channel device (provided in the so-called p-well formed on the mandrel substrate)
Both channel elements are LiJ functional. Of course, a p-channel element 7 with the polarity reversed is also possible.
寸だＪＴｉ：的転送方手段として′ｉ［暮１重結合・素
子の１易合を説明したが、ＢＢＤ等、他の転送手段でも
よい。JTi: As a means of transferring data, we have explained the simple case of a single bond/element, but other transfer means such as BBD may be used.
寸だ、光電変換素子からの読み出し手段としてＭＯＳＦ
ＥＴ ＶＣよるスイッチを用い、垂直転送手段として金
属層を用いたいわゆるＭＯＳ型の受光部を有するＭＯＳ
型、ＣＰＤ型、その他の固体撮像素子においでも有効で
ある。In fact, MOSF is used as a reading means from photoelectric conversion elements.
ET A MOS that uses a VC switch and has a so-called MOS type light receiving section that uses a metal layer as a vertical transfer means.
It is also effective for solid-state imaging devices such as type, CPD type, and others.
発明の効宋
以上のように本発明は、行列状に配列された複数の光電
変換素子の互いに隣接した行に属する前記光電変換素子
の水平方向の位１！が互いに異なる第
ように配置されているとともに、垂直転送手段が蛇行状
に配置ｆｆされていることによって少い画素数で高い水
平Ｍ’ｌ像度を得ることができその工業」二の価値は大
きい。EFFECTS OF THE INVENTIONSONG As described above, the present invention provides a horizontal position 1! of the photoelectric conversion elements belonging to mutually adjacent rows of a plurality of photoelectric conversion elements arranged in a matrix. The vertical transfer means are arranged in different directions, and the vertical transfer means are arranged in a meandering manner, so that a high horizontal M'l image resolution can be obtained with a small number of pixels. big.
第１図附−介来例を説明するだめの概略図、第２図は本
発明の実姉例の全体構成図、第３１凶は本発明の実砲例
をすＪに詳しく説明するだめの部分Ｆｔ４成図、第４図
は本発明による５１９ス動パルス例を示すパルス図であ
る。
５・・・・・光電変換素子、６・・・・短面転送ＣＣＤ
。
７ ・・水５１（転送ＣＣＤ、８・・・・・・電荷検知
部、１Ｑ・・・・・・分１□；４［ｒ領域、１−１−１
．１１−２．１２−１゜１２−２．１３−ｊ 、１４−
０ 、１４−１ ・・・４相、駆動ＣＯＤの各転送電極
、１６，１７．１８−・・・・光電変換素子、１９・・
・表面チャンネル領域、２０．２１．２２・・・・・・
駆動ハルス例。
１図
？
第 ２ 図
６ に
７
第 ３１図Fig. 1 is a schematic diagram for explaining an example of the invention, Fig. 2 is an overall configuration diagram of an actual sister example of the present invention, and Fig. 31 is a schematic diagram for explaining the actual gun example of the present invention in detail. Ft4 diagram, FIG. 4 is a pulse diagram showing an example of 519 motion pulses according to the present invention. 5...Photoelectric conversion element, 6...Short surface transfer CCD
. 7...Water 51 (transfer CCD, 8...charge detection section, 1Q...minute 1□; 4 [r area, 1-1-1
．． 11-2.12-1゜12-2.13-j, 14-
0, 14-1...4 phase, each transfer electrode of drive COD, 16, 17.18-...photoelectric conversion element, 19...
・Surface channel area, 20.21.22...
Driving Hals example. Figure 1? Figure 2 Figure 6 to 7 Figure 31
Claims (5)
この光電変換素子に蓄積された信号電荷を垂直方向に転
送する手段を有し、たがいに隣接した行に属する前記光
電変換素子の水平方向の位置が互いに異なるよう１（配
置されるとともに、前記垂直方向に転送する手段が蛇行
状に配置されていることを特徴とする固体撮像装置。(1) A plurality of photoelectric conversion elements arranged in a matrix (f),
The photoelectric conversion elements have means for vertically transferring the signal charges accumulated in the photoelectric conversion elements, and the photoelectric conversion elements belonging to adjacent rows are arranged so that the horizontal positions of the photoelectric conversion elements are different from each other, and the vertical A solid-state imaging device characterized in that means for transmitting data in a direction is arranged in a meandering manner.
が垂直方向に対し９０度以下の角度をもつ辺を有すると
七を特徴とする特Ｗｒ１箔求の範Ｉ’１１第１ 、ｆＪ
ｉ記載の固体撮像装置。(2) The photoelectric conversion element or the means for vertically transferring data has a side having an angle of 90 degrees or less with respect to the vertical direction.
The solid-state imaging device according to i.
の前記光電変換素子に対し同一方形に形成されているこ
とを特徴とする特許請求の範囲第１項もしくは第２項に
記載の固体撮像装置。(3) The solid-state imaging device according to claim 1 or 2, wherein the means for transferring signal charges from the photoelectric conversion elements is formed in the same shape for all the photoelectric conversion elements. Device.
されていることを特徴とする特許請求の範囲第１項、第
２項もしくは第３項に記載の１１Ｊ・１体撮像装置。(4) The 11J one-piece imaging device according to claim 1, 2, or 3, wherein the vertical transfer means is constituted by a charge-coupled device.
電変換素子に蓄積された信号型Ａを垂直方向に転送する
手段を有し、たがいに隣接した行に属する前記光電変換
素子の水モ方向のｆｉ′１．、 ｉ＠（が力いに異なる
ように配置されるとともに、前記了１ｊ自刃向に転送す
る手段として電？Ｗｒ結合素ｌを有しこの電荷結合素子
が蛇イア状に配置されている固体撮像素子の全ての前記
光電変換素子に蓄積された（７ｐ−、？屯ｆｉｆを前記
電荷結合素子に転送された状態（ｌζし７だ後、全ての
１１Ｊ配信ｆ４．７１： 、Ｑ：ｒが同一の駆動パルス
が印加される転送電４硯のチャンネルに転送すると吉を
・′１ヶ１″；□りとする固体撮像装置の駆動方法。(5) It has a plurality of photoelectric converters r arranged in a matrix and a means for vertically transferring the signal type A accumulated in the photoelectric conversion elements, and the photoelectric conversion elements belonging to adjacent rows are connected to each other. fi′1 in the water direction. , i@( are arranged in different directions, and the charge-coupled devices are arranged in a serpentine shape. The state (lζ and 7, then all 11J distribution f4.71:, Q:r are the same) accumulated in all the photoelectric conversion elements of the device A method for driving a solid-state imaging device in which a transfer voltage is transferred to four channels to which a driving pulse is applied to make the signal ``1 piece 1'';
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59043337A JPS60187187A (en) | 1984-03-06 | 1984-03-06 | Solid-state image pickup device and its driving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59043337A JPS60187187A (en) | 1984-03-06 | 1984-03-06 | Solid-state image pickup device and its driving method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60187187A true JPS60187187A (en) | 1985-09-24 |
Family
ID=12661020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59043337A Pending JPS60187187A (en) | 1984-03-06 | 1984-03-06 | Solid-state image pickup device and its driving method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60187187A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62266869A (en) * | 1986-05-15 | 1987-11-19 | Nippon Hoso Kyokai <Nhk> | Solid-state image sensing device |
| JPS6489363A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Solid state image sensing device |
| JPH05326913A (en) * | 1992-05-20 | 1993-12-10 | Sharp Corp | Solid-state image sensing device |
| US5488239A (en) * | 1994-07-14 | 1996-01-30 | Goldstar Electron Co., Ltd. | Solid state image sensor with shaped photodiodes |
| US5656835A (en) * | 1992-06-01 | 1997-08-12 | Matsushita Electric Industrial Co., Ltd. | Solid state imager and its driving method |
| US5793071A (en) * | 1996-09-27 | 1998-08-11 | Kabushiki Kaisha Toshiba | Solid-State imaging device |
| JP2001244450A (en) * | 2000-02-29 | 2001-09-07 | Fuji Film Microdevices Co Ltd | Solid-state image pick-up device |
| JP2002043559A (en) * | 2000-07-21 | 2002-02-08 | Fuji Film Microdevices Co Ltd | Solid-state imaging device and driving method thereof |
| US6674094B2 (en) | 2001-06-20 | 2004-01-06 | Kabushiki Kaisha Toshiba | CMOS image sensor |
| US8208052B2 (en) | 2008-12-19 | 2012-06-26 | Panasonic Corporation | Image capture device |
| US8253818B2 (en) | 2008-10-02 | 2012-08-28 | Panasonic Corporation | Pixel shift type imaging device |
| US8537256B2 (en) | 2009-10-07 | 2013-09-17 | Panasonic Corporation | Image pickup device and solid-state image pickup element |
-
1984
- 1984-03-06 JP JP59043337A patent/JPS60187187A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62266869A (en) * | 1986-05-15 | 1987-11-19 | Nippon Hoso Kyokai <Nhk> | Solid-state image sensing device |
| JPS6489363A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Solid state image sensing device |
| JPH05326913A (en) * | 1992-05-20 | 1993-12-10 | Sharp Corp | Solid-state image sensing device |
| US5656835A (en) * | 1992-06-01 | 1997-08-12 | Matsushita Electric Industrial Co., Ltd. | Solid state imager and its driving method |
| US5488239A (en) * | 1994-07-14 | 1996-01-30 | Goldstar Electron Co., Ltd. | Solid state image sensor with shaped photodiodes |
| US5793071A (en) * | 1996-09-27 | 1998-08-11 | Kabushiki Kaisha Toshiba | Solid-State imaging device |
| JP2001244450A (en) * | 2000-02-29 | 2001-09-07 | Fuji Film Microdevices Co Ltd | Solid-state image pick-up device |
| JP2002043559A (en) * | 2000-07-21 | 2002-02-08 | Fuji Film Microdevices Co Ltd | Solid-state imaging device and driving method thereof |
| US6674094B2 (en) | 2001-06-20 | 2004-01-06 | Kabushiki Kaisha Toshiba | CMOS image sensor |
| US8253818B2 (en) | 2008-10-02 | 2012-08-28 | Panasonic Corporation | Pixel shift type imaging device |
| US8208052B2 (en) | 2008-12-19 | 2012-06-26 | Panasonic Corporation | Image capture device |
| US8537256B2 (en) | 2009-10-07 | 2013-09-17 | Panasonic Corporation | Image pickup device and solid-state image pickup element |
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