JPS60181270A - Production of target for sputtering - Google Patents
Production of target for sputteringInfo
- Publication number
- JPS60181270A JPS60181270A JP59036412A JP3641284A JPS60181270A JP S60181270 A JPS60181270 A JP S60181270A JP 59036412 A JP59036412 A JP 59036412A JP 3641284 A JP3641284 A JP 3641284A JP S60181270 A JPS60181270 A JP S60181270A
- Authority
- JP
- Japan
- Prior art keywords
- target
- holder
- sputtering
- plasma
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はスパッター用ターゲットの製造方法、たとえば
半導体分野のパシベーション、絶縁薄膜および誘電体薄
膜をはじめとする各種薄膜の形成に有用なスパッター用
ターゲットを製造する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a sputtering target, for example, for manufacturing a sputtering target useful for forming various thin films including passivation, insulating thin films, and dielectric thin films in the semiconductor field. It's about how to do it.
２ ・・
従来例の構成とその問題点
近年、無機物の薄膜を作製するさいに、特に金属以外の
無機化合物の場合、マグネトロンＲＦスパッター法がよ
く利用される。その時スパッタータルゲットは、無機化
合物の原料の粉末を混合し、仮焼、粉砕、成形、焼成（
焼結）およびスパッター装置に合った形状にするための
加工の順に長い工程を通って作製される。この中で成形
、焼成および加工の工程は、ターゲットが小さくてよい
場合には大がかりな治具、装置は必要でないが、大形ス
パッター装置の２ｏｒＩｎ直径以上のターゲットや５イ
ンチ×１５インチの方形の生産機用夕〜ゲットでは、上
記治具、装置関係は大がかりでコストがかさむ。また焼
成技術も高度なものが要求され、大きなターゲットをそ
りやクラックなしに平板状に焼結することはなかなか困
難である。そりがあるとその後の修正加工にそのだめの
設備と労力を要するので、できるだけ上下面が平行で、
かつそりがない焼結体を作らねばならない。実際、上記
適当な形状の大形セラミックターゲットを−気に焼結す
ることは困難であるので、よく分割したり、加工に労力
をついやしでいる。このようにして作製したセラミソク
ターダット板の片面にＣｕやＮｉの薄膜をスパッター法
や蒸着法でつけ、その面とターゲットホルダー金属板（
スパッター装置のカソードの一部となる）との間を低融
点エ ハンダを用いて接合し、最終的なスパッターター
ゲットとして完成させる。この最後のプロセスもＣｕ、
Ｎｉ膜を形成する設備や、高価なＩｎｚ・ンダを使用し
、接合後の歪取り等に長時間を必要とする。2. Configuration of conventional examples and their problems In recent years, magnetron RF sputtering is often used when producing thin films of inorganic substances, especially in the case of inorganic compounds other than metals. At that time, the sputter talget is made by mixing raw material powders of inorganic compounds, calcining, pulverizing, molding, and baking (
It is manufactured through a long process of sintering) and processing to make it into a shape suitable for sputtering equipment. In this process, the molding, firing, and processing steps do not require large jigs or equipment if the target is small, but it can be In order to obtain a production machine, the above-mentioned jigs and equipment are large-scale and costly. Furthermore, sophisticated firing techniques are required, and it is quite difficult to sinter a large target into a flat plate without warping or cracking. If there is warpage, additional equipment and labor will be required for subsequent corrections, so the top and bottom surfaces should be parallel as much as possible.
It is also necessary to produce a sintered body that is free from warpage. In fact, it is difficult to sinter a large ceramic target of an appropriate shape, so it is necessary to divide the target into parts or to process it with great effort. A thin film of Cu or Ni is applied to one side of the ceramic soctor plate thus prepared by sputtering or vapor deposition, and that surface and the target holder metal plate (
(which becomes part of the cathode of the sputtering device) is bonded using a low melting point epoxy solder to complete the final sputter target. This last process also Cu,
Equipment for forming the Ni film and expensive Inz solder are used, and it takes a long time to remove strain after bonding.
発明の目的
本発明は上述したような成形、焼成（焼結）および加工
工程がなく、かつターゲットホルダー板との接合に、Ｃ
ｕ、Ｎｉ等の金属膜やＩｎｚ・ンダを用いない、低コス
トで短時間に容易にできるスノ（ツタ−用ターゲットの
製造方法を提供することを目的とする。Purpose of the Invention The present invention does not require the above-mentioned molding, firing (sintering), and processing steps, and the bonding with the target holder plate requires C.
It is an object of the present invention to provide a method for manufacturing a target for snow vines that can be easily made at low cost and in a short time without using metal films such as U, Ni, etc. or Inz and solder.
発明の構成
本発明の方法は、基本的に、ターゲット粉末をたとえば
プラズマ溶射装置を用いて半溶融状態にし、タルゲット
ホルダー金属に溶射付着せしめ、ホルダー金属面上に直
接セラミック状ターゲットを形成するものである。これ
によって、金型に粉末をつめてプレス成形する工程、そ
れを電気炉中で焼結する工程、適当な形状に加工修正す
る工程、ＣｕやＮｉのスパッターあるいは蒸着工程、■
ｎ）・ンダによる接合工程を特に必要としない。ただ粉
末を得る寸での工程、特に容易に入手できない複雑な化
合物の場合、化学的合成あるいは窯業的固相反応を利用
して作製する。容易に入手できる単純な無機物の場合必
要に応じ簡単な粉体の前処理、たとえば熱処理、粉砕、
分級を経て溶射に適当なすべり易い粒径にそろえること
で利用できる。以」二のようにして作製したターゲット
は、ターゲット物質からカソード電極への熱伝導がよく
、また強固にターゲットホルダー金属板に付着している
ので、高いスパッターパワーの時に熱ショックによるク
ラック等の破損しにくい長所を持つ。Components of the Invention The method of the present invention basically involves making a target powder into a semi-molten state using, for example, a plasma spraying device, and depositing it on a metal target holder by thermal spraying, thereby forming a ceramic target directly on the metal surface of the holder. It is. This process includes the process of filling a mold with powder and press-forming it, sintering it in an electric furnace, processing and modifying it into an appropriate shape, sputtering or vapor deposition of Cu and Ni,
n) No special bonding process is required. In the process of obtaining powder, especially in the case of complex compounds that are not easily available, chemical synthesis or ceramic solid-phase reactions are used to produce them. In the case of easily available simple inorganic materials, simple powder pretreatment such as heat treatment, grinding,
It can be used by classifying it to a slippery particle size suitable for thermal spraying. The target prepared as described above has good heat conduction from the target material to the cathode electrode, and is firmly attached to the target holder metal plate, so there is no damage such as cracks due to thermal shock when using high sputtering power. It has advantages that are difficult to overcome.
さらに、時として使用される平板状でないスパッタータ
ーゲット、たとえば球形のターゲットが必要な場合、従
来では製作が非常に困難であったが、本発明は容易にそ
のようなターゲットを提供できる。すなわち、球状の金
属ターゲットホルダーに、その全表面にまんべんなく、
粉末を溶射付着させれば簡単に球状ターゲットが得られ
る。Furthermore, if a non-planar sputter target, which is sometimes used, is required, for example a spherical target, which is conventionally very difficult to manufacture, the present invention can easily provide such a target. That is, a spherical metal target holder is evenly coated on its entire surface.
A spherical target can be easily obtained by thermal spraying the powder.
一般にマグネトロンスハソターターゲソトでは、長時間
使用すると当然集中的にスパッターされた部分、すなわ
ちエロージョンパターンが生ずる。In general, when using a magnetron sputter target for a long period of time, concentrated sputtering areas, that is, erosion patterns, naturally occur.
この部分はターゲットが薄くなり、ある一定の厚みまで
減少したら、ターゲットの一部のみ薄くなっているにも
かかわらず全体を新しいターゲ７）と交換しなくてはな
らない。したがって、不経済といえる。しかし本発明の
方法は、エロージョンパターン部分の薄くなってターゲ
ット物質が減少した部分に、さらに同じ物質粉末を溶射
し、つぎたす形で元の状態に再生できるという長所を持
つ。In this part, the target becomes thinner, and when it decreases to a certain thickness, the entire target must be replaced with a new target 7) even though only a part of the target has become thinner. Therefore, it can be said to be uneconomical. However, the method of the present invention has the advantage that the same material powder can be further thermally sprayed onto the thinned erosion pattern portion and the target material has been reduced to restore the original state.
また、ターゲットの厚みに場所による分布を持たせるこ
とも容易で、それによって、ターゲット表面での磁界の
強さや、温度の分布を持たせて、生成する薄膜の厚み分
布をコントロールすることもできる。Furthermore, it is easy to make the thickness of the target have a distribution depending on the location, and by doing so, it is also possible to control the thickness distribution of the produced thin film by giving the strength of the magnetic field and the distribution of the temperature on the target surface.
実施例の説明
実施例１
高い電気絶縁、耐熱性および耐摩耗性を有するＡ１２ｏ
３は、半導体分野でゲート絶縁膜や保護膜および誘電体
膜として、電子ディスプレイデバイス（たとえば薄膜電
場発光素子）で、絶縁膜やパシベーション膜として利用
される。このＡｌ２Ｏ３のターゲットについて以下述べ
る。前記有用性からＡｌ２Ｏ３はそのままで容易に溶射
に適した粉体が得られる。９９．５％純度の約４０μｍ
粒径の粉体を用いた。Description of Examples Example 1 A12o with high electrical insulation, heat resistance and wear resistance
3 is used as a gate insulating film, a protective film, and a dielectric film in the semiconductor field, and as an insulating film and a passivation film in electronic display devices (for example, thin film electroluminescent devices). This Al2O3 target will be described below. Because of the above-mentioned usefulness, powder suitable for thermal spraying can be easily obtained from Al2O3 as it is. Approximately 40 μm with 99.5% purity
A powder with a particle size was used.
第１図に示すように、プラズマ溶射ガン１と１２．７胴
Ｘ３８．１Ｍの寸法の真ちゅう製のターゲットホルダー
２（カソードの一部となる）を配置し、互いの距離を約
１ｏｃｒｎに保った。真ちゅうホルダーのエツジ部分に
はボルト穴がおいており、ターゲツト材が付着する必要
がないのでステンレススチール板のマスク３をかぶせた
。ターゲソトホルダー２の、Ａｌ２Ｏ３が付着する表面
側は、あらかじめサンドブラストによって表面を荒し、
粗面の状態にした。Ａｒ ガスをプラズマガスに用い、
毎分約４２．５Ｌの流量で、了○〇へ、３５Ｖのパワー
を印加した。第２図のプラズマ溶射ガンの断面図に示し
たように１００００〜２００００ ℃のＡｒガスプラズ
マ５により、Ａｌ２Ｏ３粒子６が瞬間的に加熱され、ガ
スと共にターゲットホルダーに向けて輸送され、そこで
凝集しセラミック化する。As shown in Figure 1, a plasma spray gun 1 and a brass target holder 2 (which becomes part of the cathode) with dimensions of 12.7 mm x 38.1 mm were arranged, and the distance between them was maintained at approximately 1 ocrn. . There is a bolt hole in the edge of the brass holder, and since there is no need for target material to adhere to it, I covered it with a stainless steel plate mask 3. The surface side of the target soto holder 2 to which Al2O3 will adhere is roughened by sandblasting in advance.
The surface was left in a rough state. Using Ar gas as plasma gas,
A power of 35V was applied to ○○ at a flow rate of approximately 42.5L per minute. As shown in the cross-sectional view of the plasma spray gun in Figure 2, the Al2O3 particles 6 are instantaneously heated by the Ar gas plasma 5 at a temperature of 10,000 to 20,000°C, and are transported together with the gas to the target holder, where they aggregate and form ceramics. become
ホルダーを紙面に垂直方向に振動させつつ、上方に動か
し、ホルダーの下部丑できたら今度は下方に動かす操作
を繰返し、薄いＡｌ２Ｏ３層を何度も積重ねた。最終２
胴の厚みのＡｌ２Ｏ３セラミック膜を付着させるのに約
２０分を要し、従来通りの窯業的手法で作るターゲット
に比較すると格段に短時間で作製される。While vibrating the holder in a direction perpendicular to the plane of the paper, the holder was moved upward, and when the lower part of the holder was finished, it was moved downward again. This operation was repeated, and thin Al2O3 layers were stacked many times. final 2
It takes about 20 minutes to deposit an Al2O3 ceramic film the thickness of the body, which is much faster than targets made using conventional ceramic techniques.
上記のようにして得られたターゲットをマグネトロンＲ
Ｆスパッター装置に装填し、ＩＴＯ薄膜を有するガラス
基板上にＡ１２ｏ３薄膜を形成した。The target obtained as above is magnetron R
It was loaded into an F sputtering device, and an A12o3 thin film was formed on a glass substrate having an ITO thin film.
形成条件は１０％の０２を含むＡｒガスをスパッターガ
スにし、５ Ｘ １ （Ｙ’ ｔｏｒｒ のガス圧、基
板温度２００℃、パワー ４ Ｋ’Ｗ テある。The formation conditions were as follows: Ar gas containing 10% 02 was used as sputtering gas, gas pressure was 5.times.1 (Y'torr), substrate temperature was 200.degree. C., and power was 4 K'W.
Ａｌ２Ｏ３を７０Ｏｏ人の厚みにつけたところ、無色透
明な薄膜が得られ、誘電率と絶縁破壊強度を測定したと
ころ、それぞれ８．５×１０６ｖ／ｌ：ｔｎであり、Ａ
ｌ２Ｏ３本来の特性が得られた。また上記ターゲットは
、従来の窯業的手法でセラミックを作り、それをターゲ
ットホルダーにはりつけたものに比較し、熱ショックに
よる破損に対し、強固であった。すなわち、従来法では
２．ｓｋＷ程度でクラックが入るが、本発明の方法によ
るＡｌ２Ｏ３ターゲットは５ｋＷでもなんらクラックは
認められず、約２倍のデポジションレートのターゲット
が得られるという長所が見い出された。When Al2O3 was applied to a thickness of 70Om, a colorless and transparent thin film was obtained, and the dielectric constant and dielectric breakdown strength were measured to be 8.5 x 106v/l:tn, respectively, and A
The original characteristics of 12O3 were obtained. Furthermore, the target was more resistant to damage due to thermal shock than a ceramic target made using conventional ceramic methods and then attached to a target holder. That is, in the conventional method, 2. Although cracks occur at about skW, the Al2O3 target produced by the method of the present invention shows no cracks even at 5kW, and the advantage has been found that a target with about twice the deposition rate can be obtained.
実施例２
高誘電率でかつ安定性の高い誘電体膜として、半導体あ
るいは電子ディスプレイデバイスによく用いられるＴａ
２０６膜を形成するためのスパッター用ターゲットを作
製した。Example 2 Ta is often used as a dielectric film with high dielectric constant and stability in semiconductor or electronic display devices.
A sputtering target for forming the 206 film was prepared.
なお、Ｔａ２０５粉末の流動性をよくするために、９
・ 。In addition, in order to improve the fluidity of Ta205 powder, 9
・ .
まずルツボに入れ１３００℃で２時間、空気中で加熱し
た。ついでボールミルで粉砕し、分級してあらかじめ２
０〜５０μｍ粒径の粉体にそろえておいた。この粉体を
用いて、以後実施例１と同様の手順でターゲットを作製
した。First, it was placed in a crucible and heated in air at 1300°C for 2 hours. Then, it is ground in a ball mill, classified and pre-treated with 2
The powder was prepared to have a particle size of 0 to 50 μm. Using this powder, a target was produced in the same manner as in Example 1.
その結果、５０００Ａの厚さで誘電率２５．絶縁破壊強
度１．５ Ｘ １０’ Ｖ ／ ｃｍ の無色透明な薄
膜を得た。Ａｌ２Ｏ３ターゲット同様、従来の窯業的手
法によるターゲ７）に比較し、約３倍の５ｋＷのスパッ
ターパワーでなんら破損が認められなかった０
実施例３
非常に高誘電率を示す誘電体薄膜としてＳ ｒ Ｔ ｉ
Ｏ３膜を作製するためのターゲットを作った０
なお、流動性のよい粉体を容易に入手できないので、Ｓ
ｒ ＣＯｓとＴ １０２を１：１％／ｌ／比に混合し
、それを１０００℃、５時間空気中で仮焼して反応させ
、ついで、ボールミル粉砕し、さらに分級してあらかじ
め２ｏ〜４０μｍの粉体に粒径にそろえ１ｏ ・
ておいた。以後、実施例１と同様の手順でターゲットを
作製した。As a result, at a thickness of 5000A, the dielectric constant was 25. A colorless and transparent thin film with a dielectric breakdown strength of 1.5 X 10' V/cm was obtained. Similar to the Al2O3 target, no damage was observed at a sputtering power of 5 kW, which is approximately three times that of the target made using the conventional ceramic method. Ti
A target was made for making an O3 film.0 Note that powder with good fluidity is not easily available, so S
r COs and T 102 were mixed at a ratio of 1:1%/l/l, and the mixture was calcined and reacted at 1000°C for 5 hours in the air, then ground in a ball mill, and further classified to form a 20 to 40 μm particle in advance. The powder was adjusted to the same particle size and placed at 1o. Thereafter, a target was produced in the same manner as in Example 1.
得られたターゲットを用いて７０００人厚みのＳ ｒ
Ｔ ｉＯ３薄膜を形成したところ、その誘電率は１４ｏ
、絶縁破壊強度は１．５ Ｘ １０６Ｖ ／備であった
。従来のターゲットに比較し、約２倍の４ｋＷのスパッ
ターパワーでもなんら熱ショックによる破損が認められ
なかった。Using the obtained target, Sr with a thickness of 7000 people
When a TiO3 thin film was formed, its dielectric constant was 14o.
The dielectric breakdown strength was 1.5 x 106V/equipment. No damage due to thermal shock was observed even at a sputtering power of 4kW, approximately twice that of conventional targets.
実施例４
耐熱、高熱導率、高強度および耐触性材料としてよく用
いられるＳｉＣの薄膜を作るためのターゲットを作製し
た。Example 4 A target for making a thin film of SiC, which is often used as a heat-resistant, high-thermal conductivity, high-strength, and corrosion-resistant material, was prepared.
ＳｉＣは一般に焼結性が悪く、セラミックを作ることは
非常に困難な材料である。しかし、本発明のプラズマ溶
射を利用することにより容易にターゲットは作成できた
。それを用いて酸素を含まないＡｒガス中でサファイヤ
基板上にスパッターし、５０００への薄膜を形成した。SiC generally has poor sinterability and is a material that is extremely difficult to make into ceramics. However, the target could be easily created by using the plasma spraying method of the present invention. Using it, sputtering was performed on a sapphire substrate in an oxygen-free Ar gas to form a thin film of 5,000 mm.
その結果黒色の薄膜が得られ、オージェ分析、赤外吸収
測定の結果ＳｉＣであることを確認した０６ｏ○℃以下
の基板１１ ゛
温度ではアモルファス状でそれ以上の基板温度では結晶
化し、容易にＸ線回析で固定できた。As a result, a black thin film was obtained, and as a result of Auger analysis and infrared absorption measurement, it was confirmed that the substrate was SiC.At temperatures below 0.6°C, it became amorphous, but at higher temperatures, it crystallized and was easily exposed to It was fixed using line diffraction.
発明の詳細
な説明したように、本発明の方法によれば、ターゲット
を溶射法を用いて作製するので、従来の窯業的設備を必
要とせず、ｉｆｔ加工工程、接合工程なしに容易に低コ
ストで短時間に作製でき、多くの溶射可能な無機物に対
して適用することができる。セラミック化が困難な高融
点物質や、板状に冶金、力ｎ工すると高価な高融点金属
は粉末状の方が一般に廉価であるため、特にそのような
ターゲットに対して効果的である。また平板状のみなら
ず曲面を持つターゲットも容易に得ることができる。As described in detail, according to the method of the present invention, the target is produced using a thermal spraying method, so conventional ceramic equipment is not required, and the process can be easily performed at low cost without the IFT process or bonding process. It can be produced in a short time and can be applied to many inorganic materials that can be thermally sprayed. High melting point substances that are difficult to make into ceramics and high melting point metals that are expensive to process into plate shapes by metallurgy or mechanical processing are generally cheaper in powder form, so it is particularly effective for such targets. In addition, it is possible to easily obtain not only a flat target but also a curved target.
第１図は本発明の方法においてターゲットホルダーに粉
末を溶射してスパッターターゲットを作製する時の様子
を示す図、第２図はそれに使用されるプラズマ溶射ガン
の一例の断面図である０１・・・・・・プラズマ溶射ガ
ン、２・・・・・・ターゲットホルダー、３・・・・・
・マスク金属、４・・・・・・溶射されたセラミック状
ターゲット、５・旧・・アルゴンガスプラズマ、６・・
・・・・Ａｌ２Ｏ３等の粒子。Fig. 1 is a diagram showing how a sputter target is produced by thermally spraying powder onto a target holder in the method of the present invention, and Fig. 2 is a cross-sectional view of an example of a plasma spray gun used therein. ...Plasma spray gun, 2...Target holder, 3...
・Mask metal, 4...Sprayed ceramic target, 5. Old...Argon gas plasma, 6...
...Particles such as Al2O3.
Claims (1)
、粉末状ターゲット物質を高温ガスで半溶融状態にし、
かつこのガスによりホルダーまで輸送し、セラミック状
に付着させることを特徴とするスパッター用ターゲット
の製造方法。 （２）粉末状ターゲット物質を半溶融状態にしてホルダ
ーに輸送する方法として、プラズマ溶射法を用いる特許
請求の範囲第１項記載のスパッター用ターゲットの製造
方法。[Claims] 0) A powdered target material is brought into a semi-molten state with high-temperature gas on a metal plate serving as a target holder for sputtering,
A method for producing a sputtering target, characterized in that the gas is transported to a holder and adhered in a ceramic form. (2) The method for manufacturing a sputtering target according to claim 1, wherein a plasma spraying method is used as a method for transporting the powdered target material in a semi-molten state to the holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59036412A JPS60181270A (en) | 1984-02-27 | 1984-02-27 | Production of target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59036412A JPS60181270A (en) | 1984-02-27 | 1984-02-27 | Production of target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60181270A true JPS60181270A (en) | 1985-09-14 |
Family
ID=12469109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59036412A Pending JPS60181270A (en) | 1984-02-27 | 1984-02-27 | Production of target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60181270A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
| US6743343B2 (en) | 1995-08-23 | 2004-06-01 | Asahi Glass Ceramics Co., Ltd. | Target and process for its production, and method of forming a film having a high refractive index |
| US6787011B2 (en) | 2000-09-08 | 2004-09-07 | Asahi Glass Company, Limited | Cylindrical target and its production method |
| WO2013065337A1 (en) * | 2011-11-04 | 2013-05-10 | 株式会社フェローテックセラミックス | Sputtering target and method for producing same |
| CN113249703A (en) * | 2021-07-15 | 2021-08-13 | 江苏海泰新材料科技有限公司 | Rotatory target apparatus for producing of electrically conductive zirconia |
-
1984
- 1984-02-27 JP JP59036412A patent/JPS60181270A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
| US6743343B2 (en) | 1995-08-23 | 2004-06-01 | Asahi Glass Ceramics Co., Ltd. | Target and process for its production, and method of forming a film having a high refractive index |
| EP1452622A3 (en) * | 1995-08-23 | 2004-09-29 | Asahi Glass Ceramics Co., Ltd. | Target and process for its production, and method for forming a film having a high refractive index |
| US6787011B2 (en) | 2000-09-08 | 2004-09-07 | Asahi Glass Company, Limited | Cylindrical target and its production method |
| WO2013065337A1 (en) * | 2011-11-04 | 2013-05-10 | 株式会社フェローテックセラミックス | Sputtering target and method for producing same |
| US10504706B2 (en) | 2011-11-04 | 2019-12-10 | Ferrotec Ceramics Corporation | Sputtering target and method for producing the same |
| CN113249703A (en) * | 2021-07-15 | 2021-08-13 | 江苏海泰新材料科技有限公司 | Rotatory target apparatus for producing of electrically conductive zirconia |
| CN113249703B (en) * | 2021-07-15 | 2021-09-14 | 江苏海泰新材料科技有限公司 | Rotatory target apparatus for producing of electrically conductive zirconia |
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