JPS60171618A - Test of magnetic resistance element - Google Patents
Test of magnetic resistance elementInfo
- Publication number
- JPS60171618A JPS60171618A JP2776984A JP2776984A JPS60171618A JP S60171618 A JPS60171618 A JP S60171618A JP 2776984 A JP2776984 A JP 2776984A JP 2776984 A JP2776984 A JP 2776984A JP S60171618 A JPS60171618 A JP S60171618A
- Authority
- JP
- Japan
- Prior art keywords
- head
- magnetoresistive element
- dummy
- thin film
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は、磁気抵抗効果型磁気ヘッドに係り、特に該ヘ
ッドの再生特性をダミー磁気抵抗素子を利用して測定す
る試験方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a magnetoresistive magnetic head, and more particularly to a test method for measuring the reproduction characteristics of the head using a dummy magnetoresistive element.
（ｂ） 従来技術と問題点
従来例を図に沿って説明する。第１図は従来の磁気抵抗
効果型磁気ヘッド（以下単にＭｌ）！ヘッドと略称スる
）のシャントバイアス方式の透視図兼ブロック図を示す
。(b) Prior art and problems A conventional example will be explained with reference to the drawings. Figure 1 shows a conventional magnetoresistive magnetic head (hereinafter simply referred to as Ml)! This is a perspective view and block diagram of the shunt bias method of the head.
図において１はＮｉＺｎフェライト・Ｍｎｚｎ７エライ
ト等よりなる磁性基板を示す。実際のＭＲヘッドにおい
ては基板を図示しない別の非磁性体にて形成し、前記磁
性基板を薄膜蒸着して形成することもある。２はチタン
薄膜、８はＮｉＦｅパーマロイよりなる磁気抵抗素子（
以下単にＭＲ素子と５はチタン薄膜２とＭ几素子８１１
！包彼する非磁性絶縁層、６はＮｉＦｅパーマロイ等の
高透磁率薄膜であって磁性基板１と共にＭＲ素子８を磁
気シールドしている。７と７′は電源であってＭＲ素子
３の両端から中央の引出層に対向方向に電流を流してい
る。この電流はＭＲ素子８に流れると共に、チタン薄膜
２にも抵抗比率に従って分流（シャント）する。このシ
ャント電流によって発生する磁界のために、ＭＲ素子８
にバイアス磁界が印加される。８は差動増幅器であって
、外部磁界に感応してＭＫ素子３の抵抗率が変化するこ
とを利用して、差動増幅器８にて差動的に外部磁界の変
化を信号として出力するものである。In the figure, numeral 1 indicates a magnetic substrate made of NiZn ferrite, Mnzn7 elite, or the like. In an actual MR head, the substrate may be formed of another non-magnetic material (not shown), and the magnetic substrate may be formed by thin film deposition. 2 is a titanium thin film, 8 is a magnetoresistive element made of NiFe permalloy (
Hereinafter, simply MR element 5 refers to titanium thin film 2 and M element 811.
! The enclosing nonmagnetic insulating layer 6 is a high magnetic permeability thin film such as NiFe permalloy, and magnetically shields the MR element 8 together with the magnetic substrate 1. Reference numerals 7 and 7' denote power supplies, which allow current to flow in opposite directions from both ends of the MR element 3 to the central extraction layer. This current flows to the MR element 8 and also to the titanium thin film 2 according to the resistance ratio. Due to the magnetic field generated by this shunt current, the MR element 8
A bias magnetic field is applied to the Reference numeral 8 denotes a differential amplifier, which uses the fact that the resistivity of the MK element 3 changes in response to an external magnetic field to differentially output changes in the external magnetic field as a signal. It is.
第２図は２Ｉ−のＭ凡素子を平行に配置したＭＲヘッド
（以下相互バイアス方式と呼称する）の透視図兼ブロッ
ク図を示す。同図において第１図との対応部位には同一
符号を付してその重複説明を省略する。図において３′
はＭＲ素子３と同じ素子を所要間隔を隔てて並行せしめ
、その間隔及び周囲を非磁性絶縁層５にて被包し、更に
磁性基板１と高透磁率薄膜６とで磁気シールドしている
。引出層４は各ＭＲ素子３と８′の両端に接続する。そ
の−万は共に接地され他方の引出端部にはｔ源７とτが
それぞれ接続され、かつ差動増幅器８が第１図と同様に
接続されている。電源７と７′によってＭＲ素子８と８
′に電流が流れ、この電流の発生する磁界によってＭｌ
Ｌ素子８と３′は相互にバイアス磁界が印加される。FIG. 2 shows a perspective view and a block diagram of an MR head (hereinafter referred to as mutual bias type) in which 2I-M elements are arranged in parallel. In this figure, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and redundant explanation thereof will be omitted. 3' in the figure
Elements identical to the MR element 3 are arranged in parallel at a required interval, and the interval and periphery thereof are covered with a non-magnetic insulating layer 5, and further magnetically shielded by a magnetic substrate 1 and a high magnetic permeability thin film 6. The extraction layer 4 is connected to both ends of each MR element 3 and 8'. -10,000 are both grounded, and the other lead-out end is connected to the t source 7 and .tau., respectively, and the differential amplifier 8 is connected in the same manner as in FIG. MR elements 8 and 8 by power supplies 7 and 7'
′, and the magnetic field generated by this current causes Ml
A bias magnetic field is mutually applied to the L elements 8 and 3'.
第３図は磁気テープ用多素子ＭＲヘッドの製造工程の概
略説明図であって、（ａ）は磁性基板１あるいは図示し
ない非磁性基板上に、第１図乃至第２図に対応する高透
磁率薄膜４までが真空成膜技術にて形成される製造工程
を示し、（ｂ）はすべての成膜が終った時点でカバープ
レート９を接着スる工程を示す。（Ｃ）は切断工程であ
ってＭＲヘッドが単体毎に切断され、研磨工程を経由し
て（ｄ）に示す７Ｌ／−ム１０に接着される。さらにフ
ラットケーブル１１とヘッド端子間を、ワイヤボンディ
ングにより接続してＭ凡へ、ドが完成する。FIG. 3 is a schematic explanatory diagram of the manufacturing process of a multi-element MR head for magnetic tape, in which (a) a high-transparency film corresponding to FIGS. A manufacturing process is shown in which up to the magnetic thin film 4 is formed by vacuum film forming technology, and (b) shows a process in which a cover plate 9 is bonded after all film formation is completed. (C) is a cutting process in which the MR head is cut into individual pieces, and then bonded to the 7L/-mu 10 shown in (d) through a polishing process. Furthermore, the flat cable 11 and the head terminal are connected by wire bonding to complete M and D.
ところで従来完成したＭＲヘッドには特性のばらつきを
伴なうことが多く、この特性のばらつきを支配している
主要因としては、ＭＲ素子の磁気異方性分散にあると言
われているが、その磁気異方性分散が実際のＭＲヘッド
の製造工程の途中において、どの程度あるかを見極める
手段がなかったために、実際のヘッドは前述のような製
造工程を経由して完成品となっｔこ時点で、ＭＲヘッド
の特性を試験してその製造ロットの合否を判定するしか
方法がなかった。By the way, conventionally completed MR heads are often accompanied by variations in properties, and it is said that the main factor controlling these variations in properties is the magnetic anisotropic dispersion of the MR element. Because there was no way to determine the extent of magnetic anisotropy dispersion during the manufacturing process of an actual MR head, the actual head was not made into a finished product through the manufacturing process described above. At that time, the only way to determine whether a manufacturing lot was acceptable was to test the characteristics of an MR head.
従って不合格品が発生すると、製造工程に消費される多
大の工数が無駄となるため量産化を阻害する欠点となっ
ていた。Therefore, when a rejected product occurs, a large amount of man-hours consumed in the manufacturing process are wasted, which is a disadvantage that hinders mass production.
（Ｃ） 発明の目的
本発明は上記従来の欠点に鑑みｌｉｔヘッド製造工程に
おける成膜の完了時点でＭＲヘッドの良否を判定する手
段の提供を目的とする。(C) Object of the Invention In view of the above-mentioned conventional drawbacks, it is an object of the present invention to provide means for determining the quality of an MR head at the time of completion of film formation in the LIT head manufacturing process.
（ｄ） 発明の構成
そしてこの目的は本発明によれば所定の熱伝導度及び熱
膨張率を有する非磁性基板上にヘラ―る磁気抵抗素子薄
膜に対して所定の縦横寸法比を有するダミー磁気抵抗素
子薄膜を形成してダミー素子を構成し、前記ダミー磁気
抵抗素子に流す電流値をパラメータとして抵抗率／磁界
の強さの関係を示す特性曲線の変曲点に設けた接線と最
小抵抗率のラインの交点が示す磁界値の変化あるいは前
記電流値によるバイアス磁界量の変化を測定することに
より前記磁気抵抗素子の良否の判定を行うことを特徴と
する磁気抵抗素子の試験方法であって又、前記ダミー素
子を磁気ヘッドを構成する基侭のｎ倍の熱伝導度を有し
、かつ同等の熱膨張率を有する非磁性基板上にヘッドと
なる磁気抵抗素子薄膜寸法の縦横比のｌ ／ ｎ倍にて
成膜形成することもでき更に、前記ダミー磁気抵抗素子
の素子幅をヘッドとなる磁気抵抗素子薄膜の素子幅のｎ
倍とし、前記ダミー磁気抵抗素子に流す電流値を前記磁
気抵抗素子薄膜に流す電流値の少くともｎ倍にて測定す
ることを特徴とする磁気抵抗素子の試験方法を提供する
ことにより達成される。(d) Structure and object of the invention According to the present invention, a dummy magnet having a predetermined length-width dimension ratio is formed on a non-magnetic substrate having a predetermined thermal conductivity and coefficient of thermal expansion with respect to a magnetoresistive element thin film. A dummy element is constructed by forming a resistive element thin film, and a tangent line and minimum resistivity are established at the inflection point of a characteristic curve showing the relationship between resistivity and magnetic field strength using the current value flowing through the dummy magnetoresistive element as a parameter. A method for testing a magnetoresistive element, characterized in that the quality of the magnetoresistive element is determined by measuring a change in the magnetic field value indicated by the intersection of the lines or a change in the amount of bias magnetic field due to the current value, and , the dummy element is placed on a non-magnetic substrate having a thermal conductivity n times higher than that of the base material constituting the magnetic head and having an equivalent coefficient of thermal expansion, and is placed on a non-magnetic substrate having an aspect ratio of the thin film dimension of the magnetoresistive element which becomes the head. It is also possible to form a film with n times the element width of the dummy magnetoresistive element.
This is achieved by providing a method for testing a magnetoresistive element, characterized in that the value of the current flowing through the dummy magnetoresistive element is measured at least n times the value of the current flowing through the thin film of the magnetoresistive element. .
（６） 発明の実施例 以下本発明の実施例を測定データによって詳述する。(6) Examples of the invention Examples of the present invention will be described in detail below using measurement data.
＠４図は７ヤントバイアス万式のダミー素子の特性測定
データを示す。実際の基板と同等の熱伝導度及び熱膨張
率を有する非磁性基板として、水晶基板（熱伝導度０．
０５４Ｗ／α℃、熱膨張率１５．６ Ｘ １０−’ ）
を用い、該水晶基板にチタン薄膜とＭＲ素子薄膜とを実
際のＭｉｔ累子の縦横寸法が相似形になる所要の大きさ
に実際のＭＲヘッドと同じ製造工程で成膜した゛所謂ダ
ミー素子（素子Ｍ１５０ｔｚｍ、素子横１１５０μｍ縦
横比２３）に、種々の電流Ｉｓ を流してその（抵抗率
ψ／磁界の強さＵ）特性曲線を測定し、該曲線の夏曲点
に設けた接線と最小抵抗率のラインの交点が示す磁界値
（以下■Ｖと略称する）及びバイアス磁界量の電流依存
性を調べた測定データを第４図に示しバイアス磁界量δ
は計算式により角度θに換算して表わしている。尚＾は
磁歪量を示す。測定の結果、ＭＲ素子として磁歪量λが
負のものについては■−が電流ｌｓの増加と共に上昇し
、ｌｓ＝８０ｍＡでＨＶが低電流の場合の１．４倍にな
った。そのためバイアス角θは２０’近辺でそれ以上変
化しないことが分った。−万ＭＲ素子として磁歪量λが
正のものについては１１には電流■ｓを増しても変化せ
ず’ｓ＝８０ｍＡ でも低電流の場合と同じＨｋを示す
ため、バイアス角θは２８° と良好なことがわかった
。Figure @4 shows the characteristic measurement data of 7 Yant bias dummy elements. A quartz substrate (thermal conductivity of 0.0.
054W/α℃, coefficient of thermal expansion 15.6 x 10-')
A so-called dummy element (so-called dummy element) was formed by forming a titanium thin film and an MR element thin film on the crystal substrate in the same manufacturing process as the actual MR head to the required size that the vertical and horizontal dimensions of the actual mit crystal are similar. Various currents Is were passed through an element M150tzm, element width 1150μm, aspect ratio 23), and its (resistivity ψ/magnetic field strength U) characteristic curve was measured, and the tangent line set at the summer point of the curve and the minimum resistance were measured. Figure 4 shows the measurement data of the magnetic field value (hereinafter abbreviated as ■V) indicated by the intersection of the ratio lines and the current dependence of the bias magnetic field amount.
is expressed by converting it into an angle θ using a calculation formula. Note that ^ indicates the amount of magnetostriction. As a result of the measurement, in the case of an MR element with a negative magnetostriction amount λ, - increases as the current ls increases, and at ls = 80 mA, HV was 1.4 times that in the case of a low current. Therefore, it was found that the bias angle θ does not change any further around 20'. - For a 10,000 MR element with a positive magnetostriction amount λ, there is no change in 11 even when the current ■s is increased, and even when 's = 80 mA, it shows the same Hk as in the case of a low current, so the bias angle θ is 28°. It turned out to be good.
上記ＭＲの磁歪社人の正負２種類の所謂シャントバイア
ス方式ＭＲヘッドパターンヲ、Ｍｎｚｕ７エライト基板
（熱伝導率０−０８１Ｗ／ａｇ’ｃ熱膨張率１２． ｌ
Ｘｌ０−６）ｋ：に形成し、Ｍ凡ヘッドの縦横比４０（
素子縦１０μｍ素子横４００μｍ ）に加工する。すな
わち上記測定ダミー素子が実際のＭ凡ヘッド形成基板の
熱伝導度の１．７４倍を有し、かつ同等の熱膨張率であ
ってＭ凡素子の縦横比が実際のＭＲヘッドの１／１４４
倍の関係に形成して、そのヘッド特性を前記測定電流の
１１５−あたる電流”ｓ＝１６ｍＡ で測定したところ
、第４図に示す測定結果と同様に、磁歪量＾が正のもの
の万がバイアスが正常にかかり再生特性が良好であった
。The above-mentioned MR magnetostrictive MR head pattern with two types of positive and negative, so-called shunt bias type MR head pattern, Mnzu7 elite substrate (thermal conductivity 0-081W/ag'c thermal expansion coefficient 12.l)
Xl0-6) k:, and the aspect ratio of the M head is 40 (
The device is processed to have a length of 10 μm and a width of 400 μm. That is, the measurement dummy element has a thermal conductivity 1.74 times that of the actual MR head forming substrate, has an equivalent thermal expansion coefficient, and has an aspect ratio of 1/144 of the actual MR head.
When the head characteristics were measured using a current equal to 115 - 16 mA of the above-mentioned measurement current, it was found that, similar to the measurement results shown in Fig. 4, even if the magnetostriction amount is positive, the bias was applied normally and the reproduction characteristics were good.
第５図は相互バイアス方式のダミー素子の測定データを
示す。図におけるダミー素子は第４図に用いｔこダミー
素子と同じ水晶基板上にＭ凡素子薄膜（素子縦５０μｍ
、素子横１１５０μｍ、縦横比２３）を実際のＭＲ素子
の縦横寸法が相似形になるように、又実際のＭｉｔヘッ
ドと同じ製造工程で成膜した所謂ダミー素子に種々の電
流Ｉｓを流してその（抵抗率ψ／磁界の強さｈ）特性曲
線を測定し、第４図の場合と同様にＬＬｋの電流依存度
を測定した。FIG. 5 shows measurement data of a dummy element using a mutual bias method. The dummy element in the figure is the one used in Figure 4, and the thin film of the M element (element length 50 μm) is placed on the same crystal substrate as the dummy element.
, the element width is 1150 μm, and the aspect ratio is 23), so that the vertical and horizontal dimensions are similar to the actual MR element, and various currents Is are applied to the so-called dummy element, which is formed in the same manufacturing process as the actual Mit head. A characteristic curve (resistivity ψ/magnetic field strength h) was measured, and the current dependence of LLk was measured in the same manner as in FIG.
その結果、Ｍ）Ｌ素子として磁歪量λが負のものについ
ては［ｋが電流Ｉｓの増加と共に上昇し、’ｓ＝８０ｍ
ＡでＨｋが低電流の場合の１．６７倍になつた。−万Ｍ
Ｒ素子として磁歪量＾が正のものについては、Ｉｉｋが
電流Ｉｓの増加に対して変化しないことが分った。As a result, for an M)L element with a negative magnetostriction amount λ, [k increases as the current Is increases, and 's=80m
At A, Hk was 1.67 times that at low current. -10,000M
It was found that for R elements with a positive magnetostriction amount, Iik does not change as the current Is increases.
上記ＭＲ素子の磁歪量λが正負２種類の所謂相互バイア
ス方式ＭＲヘッドパターンをＭ、、−Ｚｎ−ｙエライト
基板（熱伝導率０．０８１Ｗ／ｆｆ℃熱膨張率１２、ｌ
Ｘ１０ ）上に形成し、ＡＩＲ素子の縦横比４゜（素子
縦１０μｍ、素子横４００μｍ）に加工して、そのＭ凡
ヘッド特性を第５図の測定電流の１１５にあたる電流’
ｓ＝１６ｍＡにて測定したところ、上記の試験結果で■
−の電流依存性のない磁歪量λが正のものの万がバイア
スが正常にかかり再生特性が良好であった。The so-called mutual bias type MR head pattern in which the above-mentioned MR element has two types of magnetostriction λ, positive and negative, is fabricated on a -Zn-y elite substrate (thermal conductivity 0.081W/ff, thermal expansion coefficient 12, l
X10) and processed to have an aspect ratio of 4 degrees (element length: 10 μm, element width: 400 μm).
When measured at s=16mA, the above test results showed ■
Even though the magnetostriction amount λ was positive and had no - current dependence, the bias was applied normally and the reproduction characteristics were good.
（ｆン 発明の効果
以上詳細に説明したように、本発明の磁気抵抗素子の試
験方法によればＭｌ（会ッドのダミー素子を電流密度、
素子温度、応力等が実際のヘッドと同等の条件になるよ
うに形成したことにより、ＭＲ素子の良否をヘッド化（
製品化）する以前に判定できるので、ＭＲ素子の製造工
程上のばらっき低減に効果がある。Effects of the Invention As explained in detail above, according to the test method of the magnetoresistive element of the present invention, the dummy element of Ml (metal) is
By forming the element temperature, stress, etc. under the same conditions as the actual head, it is possible to check the quality of the MR element in the head (
Since it can be determined before commercialization, it is effective in reducing variations in the manufacturing process of MR elements.
第１図はシャントバイアス方式のＭＲヘッドの透視図兼
ブロック図、第２図は相互バイアス方式のＭＲヘッドの
透視図兼ブロック図、第８図はＭＲヘッドの製造工程の
概略説明図、第４図はシャントバイアス方式のダミー素
子の特性測定データ、第５図は相互バイアス方式のダミ
ー素子の特性測定データを示す。
図において１は磁性基板、２はチタン薄膜、３と３′は
Ｍｌｔ素子、４は引出層、５は非磁性絶縁層６は高透磁
率薄膜、７とτは電源、８は差動増幅器、９はカバープ
レート、１０は７レーム、１１は７ラツトケーブルを示
す。
第１図 第３問Fig. 1 is a perspective view and block diagram of a shunt bias type MR head, Fig. 2 is a perspective view and block diagram of a mutual bias type MR head, Fig. 8 is a schematic explanatory diagram of the manufacturing process of the MR head, and Fig. 4 The figure shows characteristic measurement data of a shunt bias type dummy element, and FIG. 5 shows characteristic measurement data of a mutual bias type dummy element. In the figure, 1 is a magnetic substrate, 2 is a titanium thin film, 3 and 3' are Mlt elements, 4 is an extraction layer, 5 is a non-magnetic insulating layer 6 is a high permeability thin film, 7 and τ are power supplies, 8 is a differential amplifier, 9 is a cover plate, 10 is a 7-ram cable, and 11 is a 7-rat cable. Figure 1 Question 3
Claims (3)
上にヘッド奄る磁気抵抗素子薄膜に対して所定の縦横寸
法比を有するダミー磁気抵抗素子薄膜を形成してダミー
素子を構成し、前記ダミー磁気抵抗素子に流す電流値を
パラメータとして抵抗率／磁界の強さの関係を示す特性
曲線の変曲点に設けた接線と最小抵抗率のラインの交点
が示す磁界値の変化あるいは前記電流値によるバイアス
磁界量の変化を測定することにより前記磁気抵抗素子の
良否の判定を行うことを特徴とする磁気抵抗素子の試験
方法。(1) A dummy magnetoresistive element is constructed by forming a dummy magnetoresistive element thin film having a predetermined length-to-width dimension ratio with respect to the magnetoresistive element thin film surrounding the head on a nonmagnetic substrate having a predetermined thermal conductivity and coefficient of thermal expansion. , a change in the magnetic field value indicated by the intersection of a tangent line provided at an inflection point of a characteristic curve showing the relationship between resistivity/magnetic field strength and a minimum resistivity line using the current value flowing through the dummy magnetoresistive element as a parameter; or A method for testing a magnetoresistive element, characterized in that the quality of the magnetoresistive element is determined by measuring changes in the amount of bias magnetic field depending on the current value.
倍の熱伝導度を有し、かつ同等の熱膨張率を有する非磁
性基板上にヘッドとなる磁気抵抗素子薄膜寸法の縦横比
のｌ ／ ｎ倍にて成膜形成したことを特徴とする特許
請求の範囲第（１）項記載の磁気抵抗素子の試験方法。(2) The dummy element is the n of the substrate constituting the magnetic head.
A patent characterized in that a film is formed on a non-magnetic substrate having twice the thermal conductivity and the same coefficient of thermal expansion at an aspect ratio of l/n times the aspect ratio of the thin film of the magnetoresistive element that becomes the head. A method for testing a magnetoresistive element according to claim (1).
磁気抵抗素子薄膜の素子幅のｎ倍とし、前記ダミー磁気
抵抗素子に流す電流値を前記磁気抵抗素子薄膜に流す電
流値の少くともｎ倍にて測定することを特徴とする特許
請求の範囲第（１）項記載の磁気抵抗素子の試験方法。(3) The element width of the dummy magnetoresistive element is n times the element width of the magnetoresistive element thin film serving as the head, and the current value flowing through the dummy magnetoresistive element is at least n times the element width of the magnetoresistive element thin film serving as the head. A method for testing a magnetoresistive element according to claim (1), characterized in that the measurement is performed at a magnification of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2776984A JPS60171618A (en) | 1984-02-15 | 1984-02-15 | Test of magnetic resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2776984A JPS60171618A (en) | 1984-02-15 | 1984-02-15 | Test of magnetic resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60171618A true JPS60171618A (en) | 1985-09-05 |
Family
ID=12230187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2776984A Pending JPS60171618A (en) | 1984-02-15 | 1984-02-15 | Test of magnetic resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60171618A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515475B2 (en) | 2001-02-16 | 2003-02-04 | International Business Machines Corporation | Determination of track width of magnetoresistive sensors during magnetic head fabrication using magnetic fields |
| US6822837B2 (en) * | 2001-01-19 | 2004-11-23 | Tdk Corporation | Thin-film magnetic head and method of manufacturing same, and method of forming a patterned thin film for a thin-film magnetic head |
| US7197813B2 (en) | 2001-03-30 | 2007-04-03 | Fujitsu Limited | Method of accurate evaluation on magnetoresistive read element |
-
1984
- 1984-02-15 JP JP2776984A patent/JPS60171618A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6822837B2 (en) * | 2001-01-19 | 2004-11-23 | Tdk Corporation | Thin-film magnetic head and method of manufacturing same, and method of forming a patterned thin film for a thin-film magnetic head |
| US6515475B2 (en) | 2001-02-16 | 2003-02-04 | International Business Machines Corporation | Determination of track width of magnetoresistive sensors during magnetic head fabrication using magnetic fields |
| US7197813B2 (en) | 2001-03-30 | 2007-04-03 | Fujitsu Limited | Method of accurate evaluation on magnetoresistive read element |
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