JP2000076630A - Manufacture of magnetoresistive type magnetic head and thin film magnetic head - Google Patents
Manufacture of magnetoresistive type magnetic head and thin film magnetic headInfo
- Publication number
- JP2000076630A JP2000076630A JP10261019A JP26101998A JP2000076630A JP 2000076630 A JP2000076630 A JP 2000076630A JP 10261019 A JP10261019 A JP 10261019A JP 26101998 A JP26101998 A JP 26101998A JP 2000076630 A JP2000076630 A JP 2000076630A
- Authority
- JP
- Japan
- Prior art keywords
- height
- substrate
- magnetoresistive
- electric resistance
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば異方性磁気
抵抗型（ＡＭＲ）やスピンバルブ構造の磁気抵抗素子を
有する磁気抵抗型薄膜磁気ヘッドに関し、特に磁気抵抗
素子を形成した基板をラッピングなどの機械加工により
研磨して、記録媒体対向面を画定すると同時に磁気抵抗
素子の高さを調整し、その電気抵抗を制御する磁気抵抗
型磁気ヘッドの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive thin-film magnetic head having an anisotropic magnetoresistive (AMR) or spin-valve magnetoresistive element, and more particularly to lapping a substrate on which a magnetoresistive element is formed. The present invention relates to a method of manufacturing a magnetoresistive magnetic head for controlling the electric resistance by adjusting the height of a magnetoresistive element at the same time as defining the surface facing the recording medium by polishing by the mechanical processing of the above.
【０００２】[0002]
【従来の技術】最近、磁気記録の高密度化に対応する再
生用ヘッドとして、異方性磁気抵抗効果やスピンバルブ
効果を利用した磁気抵抗素子（ＭＲ素子）を備えた磁気
抵抗型磁気ヘッド（ＭＲヘッド）が使用されている。Ｍ
Ｒヘッドは、その感度が外部磁場の強さに応じて変化す
るＭＲ素子の電気抵抗に依存することから、記録媒体の
回転速度に拘らず高い信号出力が得られる利点がある。2. Description of the Related Art Recently, a magnetoresistive magnetic head (MR element) provided with a magnetoresistive element (MR element) utilizing an anisotropic magnetoresistive effect or a spin valve effect as a reproducing head corresponding to a higher density of magnetic recording. MR head) is used. M
The R head has an advantage that a high signal output can be obtained regardless of the rotation speed of the recording medium because the sensitivity of the R head depends on the electric resistance of the MR element which changes according to the strength of the external magnetic field.
【０００３】ＭＲ素子は、基板上に積層した多層構造の
磁気抵抗膜（ＭＲ膜）を有し、その両端に接続した電極
間にセンス電流を流して該ＭＲ膜の抵抗の変化を電圧の
変化として検出することにより、磁気記録媒体からの信
号磁界を読み取る。従って、ＭＲヘッドが常に所定の電
磁変換特性を発揮し得るためには、外部磁場が無い状態
でのＭＲ素子の電気抵抗を所定の公差の範囲内に製造す
ることが必要である。An MR element has a multi-layered magnetoresistive film (MR film) laminated on a substrate, and a sense current flows between electrodes connected to both ends thereof to change the resistance of the MR film to change the voltage. As a result, the signal magnetic field from the magnetic recording medium is read. Therefore, in order for the MR head to always exhibit predetermined electromagnetic conversion characteristics, it is necessary to manufacture the electric resistance of the MR element in the absence of an external magnetic field within a predetermined tolerance.
【０００４】ＭＲ素子の電気抵抗は、その幅及び膜厚と
長さ、即ちストライプハイトと呼ばれる記録媒体対向面
からの高さとから決定される。ＭＲ素子の幅及び膜厚
が、基板上に磁気抵抗膜を形成するウエハの成膜工程で
制御されるのに対し、ストライプハイトは、磁気抵抗膜
を形成した基板をラッピングなどにより研磨して記録媒
体対向面を画定する工程で制御される。即ち、最終的に
ＭＲ素子の電気抵抗は、基板の研磨加工でその研磨量を
制御することにより決定される。The electrical resistance of an MR element is determined by its width, film thickness and length, that is, the height from the surface facing the recording medium, called the stripe height. While the width and thickness of the MR element are controlled in a wafer forming process for forming a magnetoresistive film on a substrate, the stripe height is recorded by polishing the substrate on which the magnetoresistive film is formed by lapping or the like. It is controlled in the step of defining the medium facing surface. That is, the electric resistance of the MR element is finally determined by controlling the polishing amount in the polishing of the substrate.
【０００５】従来より研磨量を制御するために、例えば
特開平９−２９３２１４号公報に記載されるように、基
板を研磨しながら、該基板上のＭＲ素子の両側に形成し
たモニターパターンを顕微鏡などで光学的に観察して、
研磨量を測定する方法が知られている。この光学的モニ
タ方法の場合、最終的な研磨寸法は、所望の電気抵抗に
対して磁気抵抗膜の寸法・成膜条件などから予め算出さ
れている。Conventionally, in order to control the polishing amount, a monitor pattern formed on both sides of an MR element on the substrate is polished by a microscope or the like while polishing the substrate as described in, for example, Japanese Patent Application Laid-Open No. 9-293214. Observe optically with
A method for measuring a polishing amount is known. In the case of this optical monitoring method, the final polished size is calculated in advance from the size of the magnetoresistive film, the film forming conditions, and the like with respect to a desired electric resistance.
【０００６】別の方法では、基板の研磨工程中に、図４
に示すように、基板上で磁気抵抗膜１の両端にリード
２、２を介して接続された電極３、３間に電流を流し、
その電気抵抗値を抵抗計４により測定して、図５に示す
ような電気抵抗と研磨量との関係を求め、その抵抗変化
特性曲線５から最終的な研磨寸法を算出する。磁気抵抗
膜の代わりに、同じ基板上に形成したモニタ用の素子の
電気抵抗値を測定することにより、同様に研磨寸法を決
定することができる。このような電気的モニタ方法は、
例えば特開平４−３６００８号公報などに記載されてい
る。[0006] In another method, during the polishing step of the substrate, FIG.
As shown in (1), a current flows between electrodes 3 and 3 connected to both ends of a magnetoresistive film 1 via leads 2 and 2 on a substrate,
The electric resistance value is measured by the ohmmeter 4 to determine the relationship between the electric resistance and the polishing amount as shown in FIG. 5, and the final polishing size is calculated from the resistance change characteristic curve 5. By measuring the electric resistance value of the monitoring element formed on the same substrate instead of the magnetoresistive film, the polishing size can be similarly determined. Such an electrical monitoring method is
For example, it is described in JP-A-4-36008.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上述し
た従来の光学的モニタ方法では、正確な制御のためには
精密な光学装置を必要とし、かつその測定作業は大変で
あり、しかも、ＭＲ素子と同様にモニターパターンも保
護膜で被覆されているため、光の乱反射により測定精度
が低下するという問題があった。However, in the above-mentioned conventional optical monitoring method, a precise optical device is required for accurate control, and the measurement operation is difficult. Similarly, since the monitor pattern is also covered with the protective film, there is a problem that the measurement accuracy is reduced due to irregular reflection of light.
【０００８】また、電気的モニタ方法では、或るウエハ
について得られた抵抗変化特性曲線を基準として、所望
のストライプハイトＨS に対して必要な電気抵抗率ＲF
を一定の公差範囲に設定し、その範囲内にモニタした電
気抵抗の値が入るように研磨する。ところが、ＭＲ素子
の形成工程では、ウエハ毎にフォトレジストの寸法やジ
ャンクション部の形成条件が微妙に異なるため、ウエハ
毎にＭＲ素子の電気抵抗がばらつき、図５に示すよう
に、ウエハによって抵抗変化特性曲線５が変化する。そ
のため、多数のウエハについて同じ電気抵抗値を適用す
ると、ウエハ毎にＭＲ素子のストライプハイトが所望の
値ＨS から外れてしまい、その電磁変換特性に悪影響を
与える虞がある。他方、ウエハ毎に抵抗変化特性曲線を
求めてその研磨量を決定することは、従来の製造工程で
は実際上困難である。In the electrical monitoring method, the electrical resistivity RF required for a desired stripe height HS is determined based on a resistance change characteristic curve obtained for a certain wafer.
Is set within a certain tolerance range, and polishing is performed so that the monitored electric resistance value falls within the range. However, in the process of forming the MR element, since the dimensions of the photoresist and the conditions for forming the junction portion are slightly different for each wafer, the electric resistance of the MR element varies for each wafer, and as shown in FIG. The characteristic curve 5 changes. Therefore, when the same electric resistance value is applied to a large number of wafers, the stripe height of the MR element deviates from a desired value HS for each wafer, which may adversely affect its electromagnetic conversion characteristics. On the other hand, it is practically difficult to determine the polishing amount by obtaining the resistance change characteristic curve for each wafer in the conventional manufacturing process.
【０００９】そこで、本発明は、上述した従来の問題点
に鑑みてなされたものであり、その目的とするところ
は、磁気抵抗素子を形成した基板を研磨することにより
磁気抵抗素子を所望の高さ即ちストライプハイトに調整
する磁気抵抗型磁気ヘッドの製造方法において、所望の
電気抵抗に対応した最適のストライプハイトを常にウエ
ハ毎に高精度に実現することができ、それにより磁気抵
抗型磁気ヘッドの電磁変換特性を安定させ、かつ製造上
歩留まりを向上させることにある。Accordingly, the present invention has been made in view of the above-mentioned conventional problems, and has as its object to polish a magnetoresistive element by polishing a substrate on which the magnetoresistive element is formed. In other words, in a method of manufacturing a magnetoresistive magnetic head that adjusts to a stripe height, an optimum stripe height corresponding to a desired electric resistance can always be realized with high accuracy for each wafer. An object of the present invention is to stabilize the electromagnetic conversion characteristics and improve the production yield.
【００１０】[0010]
【課題を解決するための手段】本発明は、上述した目的
を達成するためのものであり、その高さ方向に沿って記
録媒体対向面と平行な１つ又は複数のスリットにより相
互に分離され、かつそれぞれの両端が共通の電極に接続
された複数の区分を有する磁気抵抗膜からなる磁気抵抗
素子を基板上に形成する過程と、前記基板を前記高さ方
向に研磨して前記磁気抵抗素子を所望の高さに調整する
過程とからなり、前記基板を最後の前記区分より手前ま
で研磨する間の前記電極間の電気抵抗を測定して、前記
最後の区分以外の前記各区分における高さと電気抵抗と
の関係を求め、得られた前記高さと電気抵抗との関係か
ら前記最後の区分における高さと電気抵抗との関係を算
出し、この算出結果に基づいて前記所望の高さに対応す
る電気抵抗値を決定し、この電気抵抗値に合わせて前記
基板を研磨することを特徴とする磁気抵抗型磁気ヘッド
の製造方法が提供される。SUMMARY OF THE INVENTION The present invention has been made to achieve the above-mentioned object, and is separated from each other by one or more slits parallel to the recording medium facing surface along the height direction. Forming a magnetoresistive element having a plurality of sections each having a plurality of sections connected to a common electrode on a substrate, and polishing the substrate in the height direction to form the magnetoresistive element. Adjusting the resistance to a desired height, measuring the electrical resistance between the electrodes while polishing the substrate to a position before the last section, the height in each section other than the last section and The relationship between the height and the electrical resistance is calculated from the obtained relationship between the height and the electrical resistance, and the relationship between the height and the electrical resistance in the last section is calculated. Determine the electrical resistance value And method of manufacturing a magnetoresistive head, characterized in that polishing the substrate in accordance with the electric resistance value is provided.
【００１１】各ウエハについて、前記磁気抵抗膜の各区
分及びそれらを分離する各スリットの寸法と磁気抵抗膜
全体の電気抵抗とは、その研磨開始前のウエハ段階で容
易に測定できる。この測定値を用いることによって、最
後の区分における高さと電気抵抗との関係は、最後の区
分を研磨する前に、それ以外の各区分についてそれぞれ
測定された高さに対する電気抵抗の変化から容易に算出
できる。従って、磁気抵抗素子の最適のストライプハイ
トに対応する電気抵抗値をウエハ毎に決定できるので、
これに基づいて研磨量を高精度に制御することができ
る。For each wafer, the dimensions of each section of the magnetoresistive film and the slits separating them and the electric resistance of the entire magnetoresistive film can be easily measured at the wafer stage before the start of polishing. By using this measurement, the relationship between the height and the electrical resistance in the last section can be easily determined from the change in the electrical resistance to the measured height for each of the other sections before polishing the last section. Can be calculated. Therefore, since the electric resistance value corresponding to the optimum stripe height of the magnetoresistive element can be determined for each wafer,
Based on this, the polishing amount can be controlled with high accuracy.
【００１２】或る実施例では、前記磁気抵抗膜が異方性
磁気抵抗膜であり、それによりＡＭＲヘッドが製造され
る。別の実施例では、前記磁気抵抗膜がスピンバルブ膜
であり、それによりスピンバルブＭＲヘッドが製造され
る。[0012] In one embodiment, the magnetoresistive film is an anisotropic magnetoresistive film, whereby an AMR head is manufactured. In another embodiment, the magnetoresistive film is a spin valve film, thereby producing a spin valve MR head.
【００１３】また、別の実施例によれば、磁気抵抗素子
を基板上に形成する過程と、その高さ方向に沿って記録
媒体対向面と平行な１つ又は複数のスリットにより相互
に分離され、かつそれぞれの両端が共通の電極に接続さ
れた複数の区分を有する、前記磁気抵抗素子と同じ磁気
抵抗膜のモニタ用素子を基板上に形成する過程と、この
基板を高さ方向に研磨して磁気抵抗素子を所望の高さに
調整する過程とからなり、基板を最後の前記区分より手
前まで研磨する間の前記電極間の電気抵抗を測定して、
最後の区分以外の各区分における高さと電気抵抗との関
係を求め、得られた高さと電気抵抗との関係から最後の
区分における高さと電気抵抗との関係を算出し、この算
出結果に基づいて所望の高さに対応する電気抵抗値を決
定し、この電気抵抗値に合わせて基板を研磨することを
特徴とする磁気抵抗型磁気ヘッドの製造方法が提供され
る。この場合、モニタ用素子についてその最後の区分に
おける高さと電気抵抗との関係を同様に算出できるの
で、その電気抵抗値に基づいて、磁気抵抗素子の最適の
ストライプハイトに対応する研磨量をウエハ毎に高精度
に制御することができる。According to another embodiment, a process of forming a magnetoresistive element on a substrate and separating the magnetoresistive element from each other by one or a plurality of slits parallel to a recording medium facing surface along a height direction thereof. Forming a monitor element of the same magnetoresistive film as the magnetoresistive element on a substrate, and having a plurality of sections each having both ends connected to a common electrode, and polishing the substrate in the height direction. Adjusting the magnetoresistive element to a desired height, measuring the electrical resistance between the electrodes while polishing the substrate to a position before the last section,
The relation between the height and the electric resistance in each section other than the last section is obtained, and the relation between the height and the electric resistance in the last section is calculated from the obtained relation between the height and the electric resistance, based on the calculation result. A method for manufacturing a magnetoresistive magnetic head is provided, wherein an electric resistance value corresponding to a desired height is determined, and the substrate is polished in accordance with the electric resistance value. In this case, since the relationship between the height and the electric resistance in the last section of the monitor element can be similarly calculated, the polishing amount corresponding to the optimum stripe height of the magnetoresistive element is determined for each wafer based on the electric resistance value. Can be controlled with high accuracy.
【００１４】また、本発明によれば、上述した方法によ
り製造され、電磁変換特性の安定した磁気抵抗型薄膜磁
気ヘッドが提供される。Further, according to the present invention, there is provided a magnetoresistive thin film magnetic head manufactured by the above-described method and having stable electromagnetic conversion characteristics.
【００１５】[0015]
【発明の実施の形態】図１は、本発明によるＭＲヘッド
の製造過程において、ガラスやセラミック材料などの基
板１０上に下地膜を介して積層したＭＲ層／スペーサ層
／バイアス層からなる３層構造のＭＲ膜１１を示してい
る。図２に併せて良く示すように、ＭＲ膜１１は、後述
するラッピングなどの研磨加工により形成しようとする
記録媒体対向面１２に対して平行をなす２つのスリット
１３、１４により、その高さ方向に相互に分離された第
１、第２及び第３区分１５〜１７からなる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows three layers of an MR layer / spacer layer / bias layer laminated on a substrate 10 made of glass or ceramic material via a base film in the process of manufacturing an MR head according to the present invention. 1 shows an MR film 11 having a structure. As best shown in FIG. 2, the MR film 11 has a height direction formed by two slits 13 and 14 parallel to a recording medium facing surface 12 to be formed by polishing such as lapping, which will be described later. The first, second and third sections 15 to 17 are separated from each other.
【００１６】ＭＲ膜１１の前記各区分は、それぞれ両端
が共通のリード１８、１８を介して電極１９、１９に接
続されている。前記各区分は、その電気抵抗が同じであ
るように、それぞれ同じ長さ（即ち高さ方向の寸法）及
び幅を有する。また、前記各スリットも同様にそれぞれ
同じ長さ及び幅を有する。ＭＲ膜１１は、その上述した
寸法・形状に対応する適当なマスクを用いて、スパッタ
リング、イオンミリングなどの従来技術により形成され
る。更に前記ＭＲ膜の上に図示しない保護膜を付着させ
るなどしてウエハ上に多数のＭＲ素子が形成されるが、
その製造工程は従来と同じであるから、説明を省略す
る。Each of the sections of the MR film 11 is connected at both ends to electrodes 19, 19 via common leads 18, 18, respectively. Each of the sections has the same length (ie, height dimension) and width so that the electrical resistance is the same. Each of the slits also has the same length and width. The MR film 11 is formed by a conventional technique such as sputtering or ion milling using an appropriate mask corresponding to the dimensions and shape described above. Further, a number of MR elements are formed on the wafer by, for example, attaching a protective film (not shown) on the MR film.
Since the manufacturing process is the same as the conventional one, the description is omitted.
【００１７】次に、このように多数のＭＲ素子を形成し
たウエハを多数のアレーに切断し、かつ各アレーを前記
高さ方向にラッピングすることにより、前記各ＭＲ素子
について記録媒体対向面を画定する。このラッピング工
程において、両電極１９間に抵抗計２０を接続し、最後
の第３区分１７を除く第１及び第２区分１５、１６の電
気抵抗値を連続的に測定する。この測定結果から、前記
第１及び第２区分についてＭＲ膜１１の研磨量即ちスト
ライプハイトＨS とその電気抵抗Ｒとの関係が得られ
る。Next, the wafer on which a large number of MR elements are formed is cut into a large number of arrays, and each array is wrapped in the height direction to define a recording medium facing surface for each MR element. I do. In this lapping step, an ohmmeter 20 is connected between the electrodes 19, and the electric resistance values of the first and second sections 15, 16 except the last third section 17 are continuously measured. From this measurement result, the relationship between the polished amount of the MR film 11, that is, the stripe height HS and the electrical resistance R of the first and second sections is obtained.
【００１８】ラッピング前の成膜した状態での第１〜第
３区分１５〜１７の電気抵抗をそれぞれｒ1 、ｒ2 、ｒ
3 とし、前記各区分毎の研磨量をＬx とすると、ｒ1 ＝
ｒ2＝ｒ3 ＝ｒであるから、第１区分１５即ち区間ＡＢ
のラッピング中におけるＭＲ膜全体の電気抵抗Ｒ1 は、
次式で表される。The electrical resistances of the first to third sections 15 to 17 in the state of film formation before lapping are represented by r1, r2 and r, respectively.
Assuming that the polishing amount for each section is Lx, r1 = 3
Since r2 = r3 = r, the first section 15, that is, section AB
The electric resistance R1 of the entire MR film during the lapping of
It is expressed by the following equation.
【００１９】[0019]
【数１】 前記第１区分の削除後第１スリット１３の区間ＢＣのラ
ッピング中、ＭＲ膜全体の電気抵抗は一定で、第２、第
３区分１６、１７の合成抵抗である。第２区分１６即ち
区間ＣＤのラッピング中におけるＭＲ膜全体の電気抵抗
Ｒ2 は、次式のようになる。(Equation 1) During the lapping of the section BC of the first slit 13 after the deletion of the first section, the electric resistance of the entire MR film is constant and is the combined resistance of the second and third sections 16 and 17. The electric resistance R2 of the entire MR film during the lapping of the second section 16, that is, the section CD, is as follows.
【００２０】[0020]
【数２】 同様に、前記第２区分の削除後第２スリット１４の区間
ＤＥのラッピング中、ＭＲ膜全体の電気抵抗は一定で、
第３区分１７の抵抗ｒ3 に等しい。第３区分１７即ち区
間ＥＦのラッピング中におけるＭＲ膜全体の電気抵抗Ｒ
3 は、次式のようになる。(Equation 2) Similarly, during the lapping of the section DE of the second slit 14 after the deletion of the second section, the electric resistance of the entire MR film is constant,
It is equal to the resistance r3 of the third section 17. The electric resistance R of the entire MR film during the lapping of the third section 17, ie, the section EF.
3 is as follows.
【００２１】[0021]
【数３】 ここで、前記各区分の長さをＬAB＝ＬCD＝ＬEF＝１．０
μｍ、前記各スリットの長さをＬBC＝ＬDE＝０．５μｍ
とし、ラッピング前の前記各区分の抵抗をｒ＝３０Ωと
すると、第１及び第２区分１５、１６における電気抵抗
値の測定結果から、図３に示されるように、研磨量即ち
ストライプハイトＨs に対するＭＲ膜全体の電気抵抗Ｒ
1 、Ｒ2 の変化が分かる。従って、実際には測定してい
ない第３区分１７における研磨量Ｌx に対する電気抵抗
ｒ3（Ｌx）の変化をＲ1 、Ｒ2 から算出することができ
る。(Equation 3) Here, the length of each section is defined as LAB = LCD = LEF = 1.0.
μm, the length of each slit is LBC = LDE = 0.5 μm
Assuming that the resistance of each section before lapping is r = 30Ω, as shown in FIG. 3, from the measurement results of the electric resistance values in the first and second sections 15 and 16, as shown in FIG. Electric resistance R of the entire MR film
1 and changes in R2 can be seen. Therefore, the change of the electric resistance r3 (Lx) with respect to the polishing amount Lx in the third section 17, which is not actually measured, can be calculated from R1 and R2.
【００２２】上述したように第３区分１７における電気
抵抗ｒ3（Ｌx）の変化は、最終的なＭＲ膜の電気抵抗と
ストライプハイトとの関係に等しいから、目標とするス
トライプハイトＨS に対する電気抵抗値ＲF が容易に決
定される。このようにして決定された電気抵抗値ＲF に
基づいて、同じウエハから切断された前記アレーのラッ
ピングが行われるので、ウエハ毎に最適化してストライ
プハイトを高精度に制御することができる。As described above, since the change in the electric resistance r3 (Lx) in the third section 17 is equal to the relationship between the electric resistance of the final MR film and the stripe height, the electric resistance value with respect to the target stripe height HSs RF is easily determined. Since the array cut from the same wafer is wrapped on the basis of the electric resistance value RF determined in this way, the stripe height can be controlled with high precision by optimizing the array for each wafer.
【００２３】以上、本発明の好適な実施例について説明
したが、本発明はその技術的範囲内において、上記実施
例に様々な変更・変形を加えて実施することができる。
例えば、ＭＲ膜を構成する区分の数は、少なくとも２以
上あれば良く、またその長さも電気抵抗値の測定条件な
どに合わせて適当に設定することができる。また、上記
実施例は、異方性磁気抵抗素子に関するものであるが、
スピンバルブ構造のＭＲ素子の製造についても同様に適
用することができる。更に本発明は、上述した特開平４
−３６００８号公報などに記載されるラッピングガイド
素子のようなモニタ用素子についても、同様に適用する
ことができる。While the preferred embodiment of the present invention has been described above, the present invention can be implemented by adding various changes and modifications to the above embodiment within the technical scope thereof.
For example, the number of sections constituting the MR film may be at least two or more, and the length can be appropriately set in accordance with the conditions for measuring the electric resistance value. Further, the above embodiment relates to an anisotropic magnetoresistive element,
The same can be applied to the manufacture of an MR element having a spin valve structure. Further, the present invention relates to the above-mentioned JP-A-Hei.
The same can be applied to a monitoring element such as a lapping guide element described in JP-A-36008.
【００２４】[0024]
【発明の効果】本発明は、以上のように構成されている
ので、以下に記載されるような効果を奏する。本発明の
磁気抵抗型磁気ヘッドの製造方法によれば、磁気抵抗膜
のスリットにより分離された既知寸法の各区分について
その高さに対する電気抵抗の変化を基板の研磨工程で測
定し、その測定結果に基づいて最後の区分における高さ
と電気抵抗との関係を計算することにより、磁気抵抗素
子の所望のストライプハイト即ち研磨量に対応する電気
抵抗をウエハ毎に最適化して高精度に制御できるので、
ウエハ毎に製造される磁気抵抗型磁気ヘッドの電磁変換
特性が安定し、品質及び歩留まりの向上を図ることがで
きる。Since the present invention is configured as described above, it has the following effects. According to the method of manufacturing a magnetoresistive magnetic head of the present invention, for each section of a known size separated by a slit of a magnetoresistive film, a change in electric resistance with respect to its height is measured in a substrate polishing step, and the measurement result is obtained. By calculating the relationship between the height and the electric resistance in the last section based on the, it is possible to optimize the electric resistance corresponding to the desired stripe height or polishing amount of the magnetoresistive element for each wafer and control it with high accuracy,
Electromagnetic conversion characteristics of a magnetoresistive magnetic head manufactured for each wafer are stabilized, and quality and yield can be improved.
【図１】本発明の方法において基板上に形成した磁気抵
抗膜及び電極を示す平面図である。FIG. 1 is a plan view showing a magnetoresistive film and electrodes formed on a substrate in a method of the present invention.
【図２】図１の部分拡大図である。FIG. 2 is a partially enlarged view of FIG.
【図３】図１の磁気抵抗膜における電気抵抗値とストラ
イプハイトとの関係を示す抵抗変化特性曲線である。FIG. 3 is a resistance change characteristic curve showing a relationship between an electric resistance value and a stripe height in the magnetoresistive film of FIG.
【図４】従来の製造方法において基板上に形成した磁気
抵抗膜及び電極を示す平面図である。FIG. 4 is a plan view showing a magnetoresistive film and electrodes formed on a substrate in a conventional manufacturing method.
【図５】図４の磁気抵抗膜における電気抵抗値とストラ
イプハイトとの関係を示す抵抗変化特性曲線である。FIG. 5 is a resistance change characteristic curve showing a relationship between an electric resistance value and a stripe height in the magnetoresistive film of FIG. 4;
【符号の説明】 １ 磁気抵抗膜 ２ リード ３ 電極 ４ 抵抗計 ５ 抵抗変化特性曲線 １０ 基板 １１ ＭＲ膜 １２ 記録媒体対向面 １３、１４ スリット １５〜１７ 区分 １８ リード １９ 電極 ２０ 抵抗計[Description of Signs] 1 Magnetoresistance film 2 Lead 3 Electrode 4 Resistance meter 5 Resistance change characteristic curve 10 Substrate 11 MR film 12 Recording medium facing surface 13, 14 Slit 15-17 Classification 18 Lead 19 Electrode 20 Resistance meter
Claims (5)
平行な１つ又は複数のスリットにより相互に分離され、
かつそれぞれの両端が共通の電極に接続された複数の区
分を有する磁気抵抗膜からなる磁気抵抗素子を基板上に
形成する過程と、 前記基板を前記高さ方向に研磨して前記磁気抵抗素子を
所望の高さに調整する過程とからなり、 前記基板を最後の前記区分より手前まで研磨する間の前
記電極間の電気抵抗を測定して、前記最後の区分以外の
前記各区分における高さと電気抵抗との関係を求め、得
られた前記高さと電気抵抗との関係から前記最後の区分
における高さと電気抵抗との関係を算出し、この算出結
果に基づいて前記所望の高さに対応する電気抵抗値を決
定し、この電気抵抗値に合わせて前記基板を研磨するこ
とを特徴とする磁気抵抗型磁気ヘッドの製造方法。1. A recording medium which is separated from one another by one or more slits parallel to a recording medium facing surface along a height direction of the recording medium.
Forming a magnetoresistive element comprising a plurality of sections each having a plurality of sections connected to a common electrode on a substrate, and polishing the substrate in the height direction to form the magnetoresistive element. Adjusting the height to a desired height, measuring the electrical resistance between the electrodes while polishing the substrate to a position short of the last section, and measuring the height and electric power in each section other than the last section. The relation between the height and the electric resistance is calculated from the obtained relation between the height and the electric resistance, and the electric resistance corresponding to the desired height is calculated based on the calculation result. A method for manufacturing a magnetoresistive magnetic head, comprising determining a resistance value and polishing the substrate in accordance with the electric resistance value.
ることを特徴とする請求項１に記載の磁気抵抗型磁気ヘ
ッドの製造方法。2. The method according to claim 1, wherein said magnetoresistive film is an anisotropic magnetoresistive film.
ことを特徴とする請求項１に記載の磁気抵抗型磁気ヘッ
ドの製造方法。3. The method according to claim 1, wherein the magnetoresistive film is a spin valve film.
と、 その高さ方向に沿って記録媒体対向面と平行な１つ又は
複数のスリットにより相互に分離され、かつそれぞれの
両端が共通の電極に接続された複数の区分を有する、前
記磁気抵抗素子と同じ磁気抵抗膜のモニタ用素子を前記
基板上に形成する過程と、 前記基板を前記高さ方向に研磨して前記磁気抵抗素子を
所望の高さに調整する過程とからなり、 前記基板を最後の前記区分より手前まで研磨する間の前
記電極間の電気抵抗を測定して、前記最後の区分以外の
前記各区分における高さと電気抵抗との関係を求め、得
られた前記高さと電気抵抗との関係から前記最後の区分
における高さと電気抵抗との関係を算出し、この算出結
果に基づいて前記所望の高さに対応する電気抵抗値を決
定し、この電気抵抗値に合わせて前記基板を研磨するこ
とを特徴とする磁気抵抗型磁気ヘッドの製造方法。4. A process of forming a magnetoresistive element on a substrate, and separating the magnetoresistive element from each other by one or a plurality of slits parallel to a recording medium facing surface along a height direction of the magnetoresistive element. Forming a monitoring element of the same magnetoresistive film as the magnetoresistive element having a plurality of sections connected to the electrodes on the substrate; polishing the substrate in the height direction to form the magnetoresistive element; Adjusting the height to a desired height, measuring the electrical resistance between the electrodes while polishing the substrate to a position short of the last section, and measuring the height and electric power in each section other than the last section. The relation between the height and the electric resistance is calculated from the obtained relation between the height and the electric resistance, and the electric resistance corresponding to the desired height is calculated based on the calculation result. Determine the resistance value And polishing the substrate in accordance with the electric resistance value.
により製造されたことを特徴とする薄膜磁気ヘッド。5. A thin-film magnetic head manufactured by the method according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10261019A JP2000076630A (en) | 1998-09-01 | 1998-09-01 | Manufacture of magnetoresistive type magnetic head and thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10261019A JP2000076630A (en) | 1998-09-01 | 1998-09-01 | Manufacture of magnetoresistive type magnetic head and thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000076630A true JP2000076630A (en) | 2000-03-14 |
Family
ID=17355930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10261019A Pending JP2000076630A (en) | 1998-09-01 | 1998-09-01 | Manufacture of magnetoresistive type magnetic head and thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000076630A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7587809B2 (en) * | 2001-09-12 | 2009-09-15 | Seagate Technology Llc | Method for forming a MR reader with reduced shield topography and low parasitic resistance |
| US8070554B2 (en) | 2004-11-17 | 2011-12-06 | Hitachi Global Storage Technologies, Netherland B.V. | Distributed shunt structure for lapping of current perpendicular plane (CPP) heads |
| US8117736B2 (en) | 2008-12-11 | 2012-02-21 | Tdk Corporation | Method of lapping a magnetic head slider |
-
1998
- 1998-09-01 JP JP10261019A patent/JP2000076630A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7587809B2 (en) * | 2001-09-12 | 2009-09-15 | Seagate Technology Llc | Method for forming a MR reader with reduced shield topography and low parasitic resistance |
| US8070554B2 (en) | 2004-11-17 | 2011-12-06 | Hitachi Global Storage Technologies, Netherland B.V. | Distributed shunt structure for lapping of current perpendicular plane (CPP) heads |
| US8117736B2 (en) | 2008-12-11 | 2012-02-21 | Tdk Corporation | Method of lapping a magnetic head slider |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6532646B2 (en) | Method of manufacturing magnetic head | |
| JP3650051B2 (en) | Process monitor element, magnetic transducer, assembly of process monitor elements, and method of manufacturing magnetic transducer | |
| US8407882B2 (en) | Method for manufacturing thin film magnetic heads | |
| US5588199A (en) | Lapping process for a single element magnetoresistive head | |
| JPH0619814B2 (en) | Magnetic transformer device wrapping control device | |
| US11935569B2 (en) | Slider with bond pad arrangements | |
| JP3395590B2 (en) | Polishing control sensor for magnetoresistive head and polishing control method using the sensor | |
| JP3180906B2 (en) | Manufacturing method of magnetoresistive composite head | |
| US6944937B2 (en) | Method of reducing ESD damage in thin film read heads which enables measurement of gap resistance | |
| US6195871B1 (en) | Method of manufacturing magnetic head elements | |
| JP3421983B2 (en) | Method of manufacturing composite thin film magnetic head | |
| JPH11191204A (en) | Production of thin-film magnetic head | |
| US6557241B1 (en) | Method of manufacturing combination type thin film magnetic head and wafer for use therefor | |
| US6807722B2 (en) | Thin-film magnetic head material and method of manufacturing same and method of manufacturing thin-film magnetic head | |
| JP2000076630A (en) | Manufacture of magnetoresistive type magnetic head and thin film magnetic head | |
| US8166630B2 (en) | Magnetic head slider manufacturing method | |
| JPH097121A (en) | Magnetoresistance type magnetic head and its production and wafer | |
| JPH10269530A (en) | Manufacturing method of magneto-resistance effect type head | |
| US7854060B2 (en) | Magnetic head substructure for use for manufacturing a magnetic head | |
| JP3926032B2 (en) | MATERIAL FOR THIN FILM MAGNETIC HEAD, MANUFACTURING METHOD THEREOF, AND METHOD FOR MANUFACTURING THIN FILM MAGNETIC HEAD | |
| JPS60191418A (en) | Manufacture of magnetic head | |
| JPH07240010A (en) | Production of magnetic head | |
| JPS60171618A (en) | Test of magnetic resistance element | |
| JPH11306514A (en) | Magneto-resistive magnetic head | |
| KR100234180B1 (en) | Resistance pattern for processing gap depth and gap depth processing method of thin film magnetic head |