JPS60165718A - Constitution of ion optical system in maskless ion implantation - Google Patents
Constitution of ion optical system in maskless ion implantationInfo
- Publication number
- JPS60165718A JPS60165718A JP2007584A JP2007584A JPS60165718A JP S60165718 A JPS60165718 A JP S60165718A JP 2007584 A JP2007584 A JP 2007584A JP 2007584 A JP2007584 A JP 2007584A JP S60165718 A JPS60165718 A JP S60165718A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- limiter
- rectangular
- lens
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 title claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 18
- 238000010586 diagram Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 241000238413 Octopus Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、マスクレスイオン注入法におけるイオン光
学系の構造に関するものであり、更に詳しくはマスクレ
スイオン注入装置としてのスルーブツトを高めたイオン
光学系に関するも２−
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of an ion optical system in a maskless ion implantation method, and more specifically to an ion optical system with increased throughput as a maskless ion implantation apparatus. .
マスクレスイオン注入法は、第１図に示すように電界放
出型液体金属イオン源（図示せず）の光軸上に小口径の
孔λαを有するリミッタ２、第ルンズ３、第２レンズグ
、半導体基板ｊを順次配列し、イオン源より放出された
イオンビームｌをリミッタλの孔コαを通過させ、第ル
ンズ３で４端クロスオーバさせた後、更に第２レンズグ
でイオンビーム径０．１μｍ或いはそれ以下に集束し、
このように集束されたイオンビームを加速走査して半導
体基板！の指定領域乙に直接、マスクなしでイオン注入
を行う方法である。As shown in FIG. 1, the maskless ion implantation method uses a limiter 2 having a small-diameter hole λα on the optical axis of a field emission liquid metal ion source (not shown), a second lens 3, a semiconductor The substrates j are arranged in sequence, and the ion beam l emitted from the ion source passes through the aperture α of the limiter λ, crosses over at the 4 ends at the 4th lens 3, and then further increases the ion beam diameter to 0.1 μm at the 2nd lens. Or focus on less than that,
The ion beam focused in this way is accelerated and scanned to scan the semiconductor substrate! This is a method in which ions are implanted directly into a designated area B without a mask.
このマスクレスイオン注入法は、従来のマスクを用いた
イオン注入法に比べてマスク作成のためのリソグラフィ
一工程が不必要で、プロセスが非常に簡単になり、更に
質量分離器を使用することにより、異なる不純動程（ｐ
、ｎ型）の異なる加速エネルギー及びドーズ量の注入領
域を同一ウェーハ上に簡単に形成することができる等の
優れた特徴を有している。Compared to conventional mask-based ion implantation, this maskless ion implantation method eliminates the need for one lithography step to create a mask, making the process extremely simple. , different impurity ranges (p
, n-type) can be easily formed on the same wafer with implantation regions having different acceleration energies and doses.
しかし、この方法においては第１図にも示されるように
イオンビーム放射角（数度〜士数度）のうち中心軸近傍
の角度のイオンビームをリミツタコの孔λα内に通過さ
せてサブミクロンで高電流密度のイオンビームを形成し
、この微細なイオンビームを走査しながら指定の領域へ
不純物注入を行うため、スルーブツトがそれ程高くなら
ず、半導体基板ｊ上に設けられた矩形状の大面積部分乙
にイオン注入を行う場合には微細なイオンビームで大面
積部分≦を塗り潰さなければならず、極めて能率が悪い
。However, in this method, as shown in Fig. 1, the ion beam at an angle near the central axis of the ion beam radiation angle (several degrees to several degrees) is passed through the hole λα of the limit octopus to produce a submicron beam. Since an ion beam with high current density is formed and impurity implantation is performed in a specified area while scanning this fine ion beam, the throughput is not so high, and it is possible to implant impurities into a large rectangular area provided on a semiconductor substrate. When ion implantation is performed in B, a large area ≦ must be covered with a fine ion beam, which is extremely inefficient.
この発明は、上記実情に鑑みマスクレスイオン注入法に
おいてスルーブツトを高めるようなイオン光学系の構造
を提案することを目的とし、。In view of the above circumstances, an object of the present invention is to propose a structure of an ion optical system that increases throughput in maskless ion implantation.
その特徴はイオン源、大口径の孔を有するリミッタ、第
ルンズ、第２レンズを順次配列し、更に第２レンズと基
板との間にはイオンビームが平行もしくは生葉束状態で
通過するように矩形リミッタマスクを配置したことにあ
る。Its features include an ion source, a limiter with a large diameter hole, a second lens, and a second lens arranged in sequence, and a rectangular shape between the second lens and the substrate so that the ion beam passes in parallel or in a bundle. This is due to the placement of the limiter mask.
可成り大きな角度（例えば、５１度）までのイオンビー
ムを上記リミッタの大口径に通過させ、更に第２レンズ
と基板との間には矩形リミッタマスクを設け、第２レン
ズから出たイオンビームを平行もしくは生葉束状態で通
過させて基板上に矩形状に照射されるため、上述のよう
な大面積部分についても一度成るいは数度の操作でイオ
ン注入を行うことができるのである。The ion beam at a considerably large angle (for example, 51 degrees) is passed through the large aperture of the limiter, and a rectangular limiter mask is provided between the second lens and the substrate, and the ion beam emitted from the second lens is passed through the large diameter of the limiter. Since the ions are passed in parallel or in the form of a bundle of leaves and irradiated onto the substrate in a rectangular shape, ions can be implanted in a single operation or several times even over a large area as described above.
更に、上記矩形リミッタマスクとしてその寸法を変える
ことができるものを使用すれば、イオン注入領域が四角
、矩形を間はず何れの寸法のものについても適用するこ
とができる。Further, by using a rectangular limiter mask whose dimensions can be changed, the present invention can be applied to cases where the ion implantation region has either a square or a rectangular shape.
以下、図示の実施例に基いてこの発明を説明すると、第
２図はこの発明の一実施例を示すマスクレスイオン注入
法におけるイオン光学系の概略図であって、第１図と同
様３は第ルンズ、グは第２レンズ、ｊは半導体基板で、
これ等は第１図に示すような従来のマスクレスイオン注
入法のイオン光学系の構造と同様に配列されて１−
いるが、この発明では第１図と異なりイオン源と第ルン
ズ３の間には大口径の孔７αを有するリミッタ７を設け
、また第２レンズグと半導体基板よとの間には二枚の鍵
型部材ｔα、ｌｒαを対向状に配列して内部に矩形状ス
リン） Ｉｂを形成した矩形リミットマスクｔを、第２
レンズｌから出たイオンビームが平行もしくは生葉束状
態で該矩形状スリットｒｂを通過するように配置する。Hereinafter, the present invention will be explained based on the illustrated embodiment. FIG. 2 is a schematic diagram of an ion optical system in a maskless ion implantation method showing an embodiment of the present invention. The second lens, g is the second lens, j is the semiconductor substrate,
These are arranged in the same way as the structure of the ion optical system of the conventional maskless ion implantation method as shown in FIG. 1, but in this invention, unlike in FIG. is provided with a limiter 7 having a large diameter hole 7α, and two key-shaped members tα and lrα are arranged oppositely between the second lens and the semiconductor substrate, and a rectangular ring is formed inside. The rectangular limit mask t formed with
The ion beam emitted from the lens l is arranged so as to pass through the rectangular slit rb in parallel or in a bundle state.
以上のような構成において、イオン源から放出されたイ
オンビーム／はその放射角のうち可成り大きな角度（ｚ
１度）までのイオンビームがリミッタ７の大口径孔７
αを通過する。このイオンビームは第ルンズ３でクロス
オーバさせられた後、第２レンズグで生葉束または平行
光とされ、矩形リミットマスクｔの矩形状スリン） １
ｂを通過して、半導体基板ｊ上にスポット状ではなく成
る面積をもって照射される。In the above configuration, the ion beam / emitted from the ion source has a fairly large radiation angle (z
The ion beam (up to 1 degree) is
Pass through α. After this ion beam is crossed over in the third lens, it is made into a bundle of leaves or parallel light in the second lens, and is converted into a straight beam or parallel light in the second lens, and is then converted into a rectangular beam with a rectangular limit mask (t).
b, and is irradiated onto the semiconductor substrate j with an area that is no longer spot-like.
したがって、この発明ではイオン源から放出ルれるイオ
ンビームｌの放射角のうち可成りのきな角度までのイオ
ンビームを平行もしくは ６−
生葉束状態で矩形状スリットざｂに通過させて半導体基
板Ｓ上に照射されるため、半導体基板！上には大面積部
分乙のイオン注入領域が一度の操作で形成することにな
る。Therefore, in this invention, the ion beam emitted from the ion source up to a considerably large radiation angle is passed through the rectangular slit b in parallel or in a bundle state to the semiconductor substrate S. Because it is irradiated onto the semiconductor substrate! On the top, a large-area ion implantation region B is formed in one operation.
なお、この実施例では二つの鍵型部材ｔα、ｒαを摺動
させることにより色々な寸法の矩形状スリットｒｂを形
成することができるので、一つの矩形リミットマスクｔ
を用いて各種寸法の四角形成るいは矩形状イオン注入部
を半導体基板ｊ上に形成することができる。In addition, in this embodiment, rectangular slits rb of various dimensions can be formed by sliding the two key-shaped members tα and rα, so one rectangular limit mask t
Square or rectangular ion implantation portions of various sizes can be formed on the semiconductor substrate j using the method.
なお、寸法の異なる矩形スリットを多数連設したリミッ
トマスク７を用いれば上述のような寸法可変の矩形リミ
ットを用いなくても各種寸法の矩形状イオン注入部を半
導体基板ｊ上に形成することができる。Note that by using the limit mask 7 in which a large number of rectangular slits with different dimensions are arranged in series, rectangular ion implantation portions with various dimensions can be formed on the semiconductor substrate j without using the variable-dimensional rectangular limit as described above. can.
更に、この発明では第２レンズがら出たイオンビームを
平行もしくは生葉束状態で、矩形リミットマスクｔのス
リットｔｂを通過させるものであるが、ここで生葉束の
大きさは注入矩形寸法（マスクの大きさ）との関係で決
められる。Further, in this invention, the ion beam emitted from the second lens is passed through the slit tb of the rectangular limit mask t in parallel or in the form of a bundle of ions, but the size of the bundle of ions is determined by the size of the implantation rectangle (the size of the mask). size).
−７− 次に、この発明の効果を具体的な実施例に基いて示す。-7- Next, the effects of this invention will be shown based on specific examples.
（１） イオン注入描画モデル
描画面積１００ ｍａ Ｘ １００ ｔｇｍの４吋ウェ
ハー上に縦横０．５μｍの間隔を置いて１００μｍＸ１
００μｍの正方形を描画モデルとする。(1) Ion implantation drawing model A drawing area of 100 μm x 1 is placed on a 4-inch wafer with a drawing area of 100 ma x 100 tgm with an interval of 0.5 μm vertically and horizontally.
A square of 00 μm is used as a drawing model.
（２）使用するイオンビーム
電流密度（０： ０．５ヤ侃、ドース量Ｉ Ｘ １０”
、雇のイオンビームを使用する。(2) Ion beam current density used (0: 0.5 Y, dose amount I x 10"
, using a hired ion beam.
（３） スループット
上記比較例は、イオンビームを最小スポット径０．１μ
ｍ まで集束して描画した場合のスループットであり、
実施例１〜４はこの発明の方法に１Ｊ開叩６０−１ｔｉ
ｂ７１Ｂ（、Ｓ）より描画した場合のスルーブツトであ
る。上記の表より明らかなように１００μｍｘｉｏｏμ
ｍのように大面積のイオン注入においてこの発明による
方法では従来法に比べて極めて効率的にイオン注入を行
うことができ、微細な線状領域にイオン注入するときは
小孔径を有するリミッタに交換することにより、容易に
イオン注入を行うことができる。(3) Throughput The above comparative example uses an ion beam with a minimum spot diameter of 0.1μ.
The throughput when drawing is focused up to m,
Examples 1 to 4 apply to the method of this invention using 1J open drum 60-1ti.
This is the throughput when drawn from b71B(,S). As is clear from the table above, 100 μmxiooμ
The method according to the present invention can perform ion implantation in a large area such as m, much more efficiently than the conventional method, and when implanting ions into a fine linear region, it is necessary to replace the limiter with a limiter having a small hole diameter. By doing so, ion implantation can be easily performed.
第１図は従来のマスクレスイオン注入法におけるイオン
光学系の構造を示す概略図、第２図はこの発明によるイ
オン光学系構造の概略図である。
図中、７は大口径の孔を有するリミッタ、ｌは矩形リミ
ッタマスク。
第１図
第２図FIG. 1 is a schematic diagram showing the structure of an ion optical system in a conventional maskless ion implantation method, and FIG. 2 is a schematic diagram showing the structure of an ion optical system according to the present invention. In the figure, 7 is a limiter with a large diameter hole, and l is a rectangular limiter mask. Figure 1 Figure 2
Claims (2)
ズ、第２レンズを順次配列し、更に第２レンズと半導体
基板との間にはイオンビームが平行もしくは生葉束状態
で通過するように矩形リミッタマスクを配置したことを
特徴とするマスクレスイオン注入法におけるイオン光学
系の構造。(1) An ion source, a limiter with a large diameter hole, a second lens, and a second lens are arranged in sequence, and a rectangular shape is arranged between the second lens and the semiconductor substrate so that the ion beam passes in parallel or in a bundle. The structure of an ion optical system in a maskless ion implantation method characterized by the arrangement of a limiter mask.
求の範囲第１項記載の構造。(2) The structure according to claim 1, which uses a rectangular limiter mask with variable dimensions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007584A JPS60165718A (en) | 1984-02-08 | 1984-02-08 | Constitution of ion optical system in maskless ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007584A JPS60165718A (en) | 1984-02-08 | 1984-02-08 | Constitution of ion optical system in maskless ion implantation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60165718A true JPS60165718A (en) | 1985-08-28 |
Family
ID=12016974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007584A Pending JPS60165718A (en) | 1984-02-08 | 1984-02-08 | Constitution of ion optical system in maskless ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60165718A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633820A (en) * | 1979-08-29 | 1981-04-04 | Toshiba Corp | Device for ion implantation |
| JPS58106824A (en) * | 1981-12-18 | 1983-06-25 | Toshiba Corp | Processing method by focus ion beam |
-
1984
- 1984-02-08 JP JP2007584A patent/JPS60165718A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633820A (en) * | 1979-08-29 | 1981-04-04 | Toshiba Corp | Device for ion implantation |
| JPS58106824A (en) * | 1981-12-18 | 1983-06-25 | Toshiba Corp | Processing method by focus ion beam |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4074139A (en) | Apparatus and method for maskless ion implantation | |
| US3434894A (en) | Fabricating solid state devices by ion implantation | |
| JP3113820B2 (en) | Electron beam lithography system with low brightness | |
| JPS5856332A (en) | Correction of defect in mask and device thereof | |
| JPH04230944A (en) | Broad beam ion implantation and device | |
| US4641034A (en) | Ion implantation apparatus and method for maskless processing | |
| JPH04242060A (en) | Reflecting electronic microscope | |
| JPS6051261B2 (en) | Charged particle beam lithography equipment | |
| JP2843249B2 (en) | Method and apparatus for manufacturing a device | |
| JPS60165718A (en) | Constitution of ion optical system in maskless ion implantation | |
| EP0035556A4 (en) | Electron beam system. | |
| JPH025343A (en) | Ion implantation | |
| JPS5943520A (en) | Maskless ion implanting device | |
| EP0066175B1 (en) | Ion implanter | |
| JPS58106824A (en) | Processing method by focus ion beam | |
| JP3265764B2 (en) | Electron beam exposure method and apparatus | |
| JPS60249318A (en) | Ion micro beam implantation | |
| JPH0897122A (en) | Method and device for applying charged particle beam | |
| JPH08162389A (en) | Method and device for charged particle beam projection | |
| JPH08315765A (en) | Electrostatic scan type ion implantation method | |
| JPS62241248A (en) | Focusing device for ion beam | |
| JPS60208826A (en) | Method of applying focusing ion beams | |
| JPS61256553A (en) | Ion-beam generator | |
| JPH0629198A (en) | Charged particle beam lithography | |
| JPH025353A (en) | Ion implanter |