JPS60164723A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPS60164723A
JPS60164723A JP59020490A JP2049084A JPS60164723A JP S60164723 A JPS60164723 A JP S60164723A JP 59020490 A JP59020490 A JP 59020490A JP 2049084 A JP2049084 A JP 2049084A JP S60164723 A JPS60164723 A JP S60164723A
Authority
JP
Japan
Prior art keywords
liquid crystal
display device
crystal display
substrate
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59020490A
Other languages
Japanese (ja)
Inventor
Toru Sakai
徹 坂井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP59020490A priority Critical patent/JPS60164723A/en
Publication of JPS60164723A publication Critical patent/JPS60164723A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Abstract

PURPOSE:To raise an assembly yield of a process for sticking a glass substrate on which a TFT is formed, and another glass substrate, by placing a lot of insulating columnar substances on the TFT, and constituting them as a spacer. CONSTITUTION:A columnar electric insulator 41 is stuck and formed selectively higher than an ITO208 in an area except the ITO208. For instance, after forming a source 202 and a drain 208, polyimide is applied thickly to several mum on the whole surface, left selectively in a prescribed area on a TFT except the ITO208, heat-cured and the columnar insulator 41 is obtained. A light shielding effect to a channel area in a semiconductor layer 205 formed by the source 202 and the drain 208 is performed simultaneously, and an effect for reducing a leak current by a light by one digit or more is also generated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、液晶と薄膜トランジスタｃ以下、Ｔ］１’Ｔ
と略す）を用いた画像表示装置に関するものであって、
−主面上に透明電極を被着させたガラス板とＴＰＴ基板
との間隙を精度よく制御し、かつＴＦ’ｌ”への遮光を
図ることを目的とする。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a liquid crystal and a thin film transistor below c, T]1'T
(abbreviated as )),
- The purpose is to accurately control the gap between a glass plate with a transparent electrode on its main surface and a TPT substrate, and to shield light to TF'l''.

（従来技術〕 近年、従来のＣＲＴに代る表示装置として薄型２− の表示装置の開発が盛んに進められている。薄型表示装
置の中でも液晶表示装置は電力、駆動電圧寿命の点で他
を凌駕しており今後の表示装置としての期待は大きい。(Prior Art) In recent years, the development of thin 2-inch display devices has been actively promoted as a display device to replace the conventional CRT.Among thin display devices, liquid crystal display devices are superior to others in terms of power consumption and drive voltage lifespan. There are great expectations for future display devices.

一般に液晶表示装置はダイナミック駆動方式とスタティ
ック駆動方式があり、後者の方が電力、駆動電圧の点で
すぐれて込る。In general, liquid crystal display devices come in two types: a dynamic drive method and a static drive method, with the latter being superior in terms of power and drive voltage.

スタティック駆動方式の液晶表示装置は、一般に上側ガ
ラス基板と、下側半導体集積回路基板よシ構成されてお
り、前記半導体集積回路上にマ）　ＩＪラックス状配置
された液晶駆動用素子を外部選択回路にて選択し、液晶
に電圧を印加することＫより、任意の文字、グラフある
いは画像の表示を行なうものである。最近では、前記半
導体集積回路を、半導体基板上にではなく、大面積化、
低コスト化における優位性によル、絶縁基板上にＴＰＴ
として形成した液晶表示装置に関する研究が特に活発で
ある。その一般的な回路図を第１図に示す。A static drive type liquid crystal display device generally consists of an upper glass substrate and a lower semiconductor integrated circuit board, and an external selection circuit connects liquid crystal drive elements arranged in an IJ rack shape on the semiconductor integrated circuit. By selecting K and applying a voltage to the liquid crystal, arbitrary characters, graphs, or images can be displayed. Recently, the semiconductor integrated circuit has been developed not on a semiconductor substrate, but on a large area.
TPT on an insulating substrate due to its advantage in cost reduction
Research on liquid crystal display devices formed as a liquid crystal display device is particularly active. Its general circuit diagram is shown in FIG.

第１図（α）はスタティック駆動方式の液晶表示パネル
に用いる絶縁基板上のＴＰＴより構成された液晶駆動素
子（絵素）のマ）　ＩＪラックス配置図の８− １部分である。図中の１で囲まれた領域が表示領域であ
り、その中に絵素２αα、２αｂ、２ｂα、２ｂｂがマ
トリックス状に配置されている。８α、８６は絵素への
ビデオ信号ライン、また４α、４ｂは絵素へのタイミン
グ信号ラインである。FIG. 1(α) is a part 8-1 of a layout diagram of a liquid crystal drive element (picture element) composed of TPT on an insulating substrate used in a static drive type liquid crystal display panel. The area surrounded by 1 in the figure is the display area, in which picture elements 2αα, 2αb, 2bα, and 2bb are arranged in a matrix. 8α and 86 are video signal lines to the picture elements, and 4α and 4b are timing signal lines to the picture elements.

１つの絵素の回路図として特に絵素２ααについての等
価回路図を第１図（ｂ）に示す。スイッチングトランジ
スタ６によりコンデンサ６にデータ信号を保持させる。As a circuit diagram of one picture element, an equivalent circuit diagram particularly for picture element 2αα is shown in FIG. 1(b). The switching transistor 6 causes the capacitor 6 to hold the data signal.

データ信号は、絶縁性基板上の各絵素に対応して形成さ
れた液晶駆動用電極７１と対向したガラスパネル上に形
成された共通電極７２により液晶７に電界として印加さ
れ、それＫよ　゛〕コントラストを生じる。一般に画像
表示用（テレビ用）として本液晶表示パネルを用ｔ、−
ａ、を場合は、線順次走査により、各走査線毎にタイミ
ングをかけ、各絵素に対応したコンデンサーに信号電圧
を保持させる訳である。このように液晶表示パネルをテ
レビとして用いた場合には、液晶の応答も良く比較的良
好な画像が得られる。The data signal is applied as an electric field to the liquid crystal 7 by a common electrode 72 formed on the glass panel facing the liquid crystal driving electrode 71 formed corresponding to each picture element on the insulating substrate. ] Creates contrast. Generally, this liquid crystal display panel is used for image display (for television).
In the case of a, line-sequential scanning is performed, timing is applied to each scanning line, and a signal voltage is held in a capacitor corresponding to each picture element. When the liquid crystal display panel is used as a television in this way, the liquid crystal has good response and relatively good images can be obtained.

第２図（ロ））は、第１図（６）に示される単位画累を
ガ４− ラス基板上にＴＰＴによル集積回路化した場合の平面図
を示し、例えば単位画累の大きさを２２０μ＠ｘ１６５
μ常とした液晶表示装置が形成される。ＴＰＴ５は、ソ
ース２０２．ドレイン２０Ｂおよびゲート２０４よりな
り、ＩＴＯ（インジウム錫酸化物）２０８は薄い酸化シ
リコン膜２０７を介してコモン電位の工ＴＯ２０６とと
もにコンデンサ６を形成している。Fig. 2 (b)) shows a plan view of the unit image shown in Fig. 1 (6) integrated into a circuit on a glass substrate using TPT. 220μ @ x 165
A typical liquid crystal display device is formed. TPT5 is source 202. Consisting of a drain 20B and a gate 204, an ITO (indium tin oxide) 208 forms a capacitor 6 together with a common potential TO 206 via a thin silicon oxide film 207.

第２図（６）は第２図（ロ）のＸ　−ＸＩ紐線上断面図
である。ＴＦＴＩを形成したガラス基板２１と一生面上
に透明電極２８ｔ−被着形成したガラス基板２２との間
に％ＦＭＩ　ＴＮ液晶またはＧ−Ｈ液晶７ｔ−充填する
ととＫより液晶セルが構成される仁とになる。FIG. 2(6) is a sectional view taken along the line X-XI of FIG. 2(b). When 7t of FMI TN liquid crystal or GH liquid crystal is filled between the glass substrate 21 on which TFTI is formed and the glass substrate 22 on which a transparent electrode 28t is deposited, a liquid crystal cell is formed by K. It becomes.

ガラス基板２２上方より入射した光ｌＯは、偏向板２５
によ１光の振動方向を一方向のみとされて液晶７を通り
、ガラス基板２１．偏向板２４を経て通過する。ＩＴ０
２８および工’ｌ’０２０８０間に所望の電位を印加す
ることＫよル、液晶７に電界を加え液晶分子をツイスト
させ、光１０の液６− 晶７に対する透明率を制御する仁とによｐ、透過型の液
晶表示装置が得られｂことになる。The light IO incident from above the glass substrate 22 is directed to the deflection plate 25.
1. The vibration direction of the light is set to be only one direction, passes through the liquid crystal 7, and passes through the glass substrate 21. It passes through a deflection plate 24. IT0
By applying a desired potential between 28 and 2080, an electric field is applied to the liquid crystal 7 to twist the liquid crystal molecules and control the transparency of the light 10 to the liquid 6-crystal 7. A transmissive liquid crystal display device can be obtained.

第８図は前述のＴＰＴ、コンデンサ等が一体化された集
積回路の製作が終了した第２図（６）の状態のガラス基
板２１を切り出し、スペーサ１１を用いて一生面上に透
明電極２８を被着したガラス基板２２とガラス基板２１
との間に所定の間隙１８を設けた状態を示す。この間隙
１１Ｃは液晶７が封入される。適当な樹脂よｐ成るシー
ル材１２によシ、液晶のしみ出しを防止するとともに湿
気の浸入を阻止する。FIG. 8 shows the glass substrate 21 in the state shown in FIG. 2 (6) after the fabrication of the integrated circuit integrated with the TPT, capacitor, etc. described above is completed, and a transparent electrode 28 is placed on the entire surface using a spacer 11. Adhered glass substrate 22 and glass substrate 21
This shows a state in which a predetermined gap 18 is provided between the two. The liquid crystal 7 is sealed in this gap 11C. The sealing material 12 made of a suitable resin prevents the liquid crystal from seeping out and also prevents moisture from entering.

この種の表示装置において、切り出されたガラス基板２
１は４４ｍＸ５６Ｉｍと非常に大きい一方で厚みはわず
か１　ｗ　Ｌかない。従って、シール材１２の熱硬化工
程で発生した歪は、例えガラス基板２１がそっていない
状態で組み立てを始めても熱硬化後はガラス基板２１に
そ力を生ぜしめ、第８図（ａ）　Ｋ示すようにガラス基
板２１の中央がガラス基板２２に接近するか、あるいは
第８図（６）　Ｋ示すように遠ざかりてしまう。In this type of display device, a cut out glass substrate 2
1 is very large at 44 m x 56 Im, but its thickness is only 1 w L. Therefore, even if the assembly is started with the glass substrate 21 not warped, the strain generated during the heat curing process of the sealing material 12 will cause a force on the glass substrate 21 after heat curing, as shown in FIG. 8(a). The center of the glass substrate 21 approaches the glass substrate 22, as shown in FIG. 8(6), or moves away from it, as shown in FIG. 8(6)K.

６− 前記間隙１８は規格上はわずか６〜１０μｍであるので
熱硬化工程で発生する歪を制御するのは極めて困難であ
る。間隙１８は液晶７の間隙であるので、間ｒ！ｓ１Ｂ
の変化は液晶７Ｋかかる電界強度の変化をもたらし、こ
のことは液晶の応答速度や透過率の変化となって現われ
る。従って、画像の均一性は著しく失なわれ、極端な場
合には画面σ中央部では液晶がツイストしないことも起
りうる。　ＴＩｌ’Ｔによる集積回路の形成が終了した
ガラス基板にはなＫがしかのそりが必ず発生しておりこ
の場合には第８図に示したような単純な形でなくもっと
複雑な断面を生じ、従って画面の不均一性もモワレ模様
風のものとなる。6- Since the gap 18 is only 6 to 10 μm according to the standard, it is extremely difficult to control the distortion generated during the thermosetting process. Since the gap 18 is the gap between the liquid crystal 7, the gap r! s1B
A change in 7K causes a change in the electric field strength applied to the liquid crystal, and this appears as a change in the response speed and transmittance of the liquid crystal. Therefore, the uniformity of the image is significantly lost, and in extreme cases, the liquid crystal may not twist at the center of the screen σ. After forming an integrated circuit using TIl'T, a glass substrate always has a warp of some kind, and in this case, the cross section is not as simple as shown in Figure 8, but more complex. Therefore, the non-uniformity of the screen also becomes moiré pattern-like.

いずれｋしても４４ｗＸ５６ｍｍもあるような大きなガ
ラス基板２１ｔ−周辺部のみに配列したスペーサ１１だ
けでそらないようにガラス基板２２と接着させることＫ
はかなルの無理がある。そこでガラスファイバーを数十
Ａｍ程度に細かく切ったものをガラス基板２１０表面に
適尚な密度で分散させてスペーサの代１とし、ガラス基
板２１およ７− び２２とを加圧しながらシール材で封入するという手法
が試みられた。ガラスファイバーはその径のバラツキも
少なく、実際に組み立てに導入した結果にお込ても、画
像の均一性は著しく向上し、液晶の動作状態も極めて一
様となった。In the future, a large glass substrate 21t measuring 44w x 56mm must be bonded to the glass substrate 22 using spacers 11 arranged only at the periphery so as not to warp.
It's impossible to be fleeting. Therefore, glass fibers cut into pieces of several tens of amperes are dispersed at an appropriate density on the surface of the glass substrate 210 to serve as spacers 1, and the glass substrates 21, 7-, and 22 are pressed together with a sealing material. A method of encapsulation was attempted. Glass fibers have little variation in their diameter, and when they were actually used in assembly, the uniformity of images was significantly improved, and the operating conditions of the liquid crystal became extremely uniform.

しかしながら、工ＴＯ２９に与える電位により白黒は反
転するが非常に多くの点状欠陥、線欠陥が発生し、従来
とは異なった意味で画質が劣化し組立て歩留が下ってし
まった。その原因は第４図に示すようにスペーサとして
ガラス基板２１上に分散されたガラスファイバー８１が
加圧、封入する工程において、薄いコンデンサ用の酸化
膜２０７を工ＴＯ２０８上から破壊すること、およびソ
ース２０２．ゲート２０４のライン上にたまたま分散さ
れることによりラインを分断してしまう仁とによるもの
と判明した。ガラスファイバー８１の形状をよｐ短くか
つ同一の径であれば加圧封入時の圧力もより均等に加わ
９ライン上に位置する確率も小さくなるはずであるが、
実際にはファイバーの切断長さには限界があ〕、径にも
バラツキ８− があるために上記のような欠陥の発生は避は得ないもの
であると考えられる。ファイバー自身が軟かければファ
イバーがつぶれることＫよｐ上記のような破壊は免れる
であろうが、それでは間隙１３の精度をよ）良く保つこ
とはできないと容易に推測できる。However, although black and white are reversed by the electric potential applied to the TO 29, a large number of point defects and line defects are generated, which deteriorates the image quality and lowers the assembly yield in a way different from the conventional method. The cause of this is that the glass fibers 81 dispersed on the glass substrate 21 as spacers destroy the thin oxide film 207 for the capacitor from above the TO 208 during the pressurizing and sealing process, as shown in FIG. 202. It turned out that this was due to the particles accidentally being dispersed on the line of the gate 204 and dividing the line. If the shape of the glass fiber 81 is shorter and has the same diameter, the pressure during pressurization will be applied more evenly and the probability of being located on the 9th line should be smaller.
In reality, there is a limit to the cutting length of the fiber, and there is variation in the diameter, so it is considered that the occurrence of the defects described above is unavoidable. If the fiber itself is soft, the fiber will be crushed and the above-mentioned destruction will be avoided, but it can be easily assumed that the accuracy of the gap 13 cannot be maintained very well in this case.

（発明の目的〕 以上のような理由によｐ本発明者らはガラスファイバー
による間隙五８の制御については導入を断念せざるを得
なかった。スペーサとして液晶分子の配列を乱すことな
く、かつＴＩｒＴによる集積回路を破壊しないような材
質および形状を考案した結果が本発明の要点であって、
以下に本発明の実施例にもとづいてｓｍ’ｓ図とともＫ
ｉｌ！明する。(Objective of the Invention) For the above reasons, the inventors had no choice but to abandon the idea of controlling the gap 58 using glass fibers. The main point of the present invention is the result of devising a material and shape that will not destroy the TIrT integrated circuit,
Based on the embodiment of the present invention, K is shown below along with the sm's diagram.
Il! I will clarify.

〔発明の構成〕[Structure of the invention]

まずスペーサの形状であるが円柱または球のように線ま
たは点で集積回路と接触するものは接触点において単位
面積あた）の圧力が大きくなるので好ましく、なにがし
かの接触面積が必要である。First, regarding the shape of the spacer, a spacer such as a cylinder or a sphere that contacts the integrated circuit in a line or point is preferable because the pressure (per unit area) at the contact point is large, and some contact area is required.

つぎにスペーサーの配置であるが、ｍ　４図のとと９− く集積回路上にばらまくという手法ではスペーサがどん
なに小さくてもある確率でＩＴＯ上に位置し、そこでは
もちろん液晶は存在できないのであるから液晶による光
の透過率の制御はありえな−し、また液晶の流れが乱れ
るため液晶の配向状態にむらを生じて上述の現象ともあ
いまって画質の劣化をもたらす。従って、少なくともＩ
ＴＯ上を避けるような配置が必要である。とのような選
択性配置はもちろん感光性樹脂を用いたフォト工程に頼
らざるを得ない。最後にスペーサの材質であるがもし万
−Ｔ１１’Ｔ集積回路上で誤って配置されたル集積回路
上の酸化膜にクラックやピンホールがありても透明電極
がスペーサ材を通して金属配線や半導体層とショートし
ないように電気的に絶縁性でなければならない。Next, regarding the placement of spacers, if you scatter them over the integrated circuit as shown in Figure 4, there is a certain probability that the spacers will be located on the ITO no matter how small they are, and of course no liquid crystal can exist there. Therefore, it is impossible to control the light transmittance by the liquid crystal, and since the flow of the liquid crystal is disturbed, the alignment state of the liquid crystal becomes uneven, which, together with the above-mentioned phenomenon, causes deterioration of image quality. Therefore, at least I
It is necessary to arrange it so as to avoid above the TO. Of course, selective arrangement such as this must rely on a photo process using photosensitive resin. Finally, regarding the material of the spacer, even if there are cracks or pinholes in the oxide film on the integrated circuit that was placed incorrectly on the T11'T integrated circuit, the transparent electrode will pass through the spacer material to the metal wiring or semiconductor layer. It must be electrically insulating to prevent short circuits.

以上述べたことを配慮した結果、本発明においては第６
図に示すように工［Ｉｔ０２０８以外の領域に柱状の電
気絶縁体４１を工Ｔ″６２０８よりも高く選択的に被着
形成した。電気絶縁体４１のガラス基板２２との接触断
面は第６図に示したような１０− 必ずしも方形に限られるものではな込。As a result of considering the above-mentioned points, in the present invention, the sixth
As shown in the figure, a columnar electrical insulator 41 was selectively deposited in the area other than the part T″6208 to be higher than the part T″6208.The contact cross section of the electrical insulator 41 with the glass substrate 22 is shown in FIG. 10- As shown in Figure 10, it is not necessarily limited to rectangular shapes.

ＴＰＴの集積回路で用いられる電気絶縁性物質としては
ＣＶＤ（化学気相成長法）Ｋよる酸化シリコン膜、皇化
シリコン膜などがあるが、前記柱状スペーサ４１の厚み
が５〜ｌＯμｍも必要であることを考えると、それらの
厚みの均一性やエツチング方法に関してかなル技術的困
難が伴なうと予想される。Electrical insulating materials used in TPT integrated circuits include silicon oxide films and silicon silicon films produced by CVD (chemical vapor deposition), but the thickness of the columnar spacer 41 must be 5 to 10 μm. Considering this, it is expected that there will be technical difficulties regarding the uniformity of their thickness and the etching method.

〔実施例〕〔Example〕

本発明の実施例においては上記した問題を避けるため電
気絶縁体としてポリイミド樹脂に着目しこれを採用した
。ポリイミドは有機高分子で粘性の高い液体であり、キ
ュアと称する２００〜８００℃の熱処理によって硬化し
、硬化後は優れた耐熱性、耐湿性、絶縁性を有する。更
にポリイミドはスピナによる回転塗布が可能であること
と、酸素ガスプラズマによる灰化が容易であることから
感光性樹脂なみの取ｐ扱込ができ集積回路においてパシ
ベーションあるいは多層配線時の層間絶縁膜として広く
用いられるようＫなっている。更に熱硬化後は液晶に溶
解しないことも判っている。In the embodiments of the present invention, in order to avoid the above-mentioned problems, we focused on polyimide resin as an electrical insulator and adopted it. Polyimide is an organic polymer and a highly viscous liquid, which is cured by heat treatment at 200 to 800°C called curing, and has excellent heat resistance, moisture resistance, and insulation properties after curing. Furthermore, since polyimide can be spin-coated with a spinner and easily ashed with oxygen gas plasma, it can be handled as easily as photosensitive resin, and is used as passivation in integrated circuits or as an interlayer insulating film during multilayer wiring. It is designed to be widely used. Furthermore, it has been found that it does not dissolve in liquid crystals after thermosetting.

そこで、ソース２０２．ドレイン２０８の形成後全面に
ポリイミドを数μ惧と厚く塗布し、工Ｔ０２０８以外の
ＴＦＴ上の所定の領域に選択的に残し、熱硬化させ柱状
絶縁体４１としたものである。Therefore, source 202. After forming the drain 208, polyimide is applied to the entire surface to a thickness of several micrometers, selectively left in a predetermined area on the TFT other than T0208, and thermally hardened to form the columnar insulator 41.

ポリイミドを選択的に残すためには感光性樹脂を用いた
フォト工程を実施するか、あるいは感光性ポリイミドを
使用すれば良い。なお、ポリイミドと同等の性質を有す
る絶縁性樹脂も本発明に使用することができる。In order to selectively leave polyimide, a photo process using a photosensitive resin may be carried out, or a photosensitive polyimide may be used. Note that insulating resins having properties equivalent to polyimide can also be used in the present invention.

一方、外部光が直接Ｔ’ＦＴ表面に入射すると半導体層
２０５において光伝導効果が生じ、ＴＦＴＫよる各種信
号伝達の際に波形の変化や電圧の変化を招き、正常な素
子特性を維持できなくなることがしばしば生じていた。On the other hand, when external light is directly incident on the T'FT surface, a photoconductive effect occurs in the semiconductor layer 205, causing changes in waveform and voltage during various signal transmission by the TFTK, making it impossible to maintain normal device characteristics. was often occurring.

ところが、前記柱状電気絶縁体４１をＴＦＴ上に形成し
たところ、ソース２０２．ドレイン２０Ｂとによって形
成される半導体層２０５におけるチャネル領域への遮光
効果も同時に果たすこととな）、光によるリーク電流を
１桁以上低減させるという効果も生じることとなった。However, when the columnar electrical insulator 41 was formed on the TFT, the source 202. At the same time, the light shielding effect on the channel region of the semiconductor layer 205 formed by the drain 20B was also achieved), and the leakage current due to light was reduced by more than one order of magnitude.

〔発明の効果〕〔Effect of the invention〕

以上の説明からも明らかなように本発明におりては絶縁
性の柱状物質をＴＦＴ上に多数配着してスペーサとして
構成することにより、従来のスペーサ材に比べ配向むら
や集積回路の破壊等については皆無となＪ）、Ｔ’ＦＴ
を形成したガラス基板ともう一方のガラス基板とを接着
子る工程の組立て歩留ｐはほぼ１００％となった。また
同時にＴＰＴに関しての遮光効果をも果たし光リーク電
流も大幅に低減することができた。As is clear from the above description, in the present invention, by arranging a large number of insulating columnar materials on a TFT and configuring it as a spacer, it is possible to cause uneven orientation and damage to integrated circuits compared to conventional spacer materials. There is no such thing as J), T'FT
The assembly yield p of the step of gluing the glass substrate on which the glass substrate was formed and the other glass substrate was almost 100%. At the same time, it also achieved a light shielding effect regarding TPT and was able to significantly reduce light leakage current.

以上のごとく本発明は高性能で耐光性の大きい液晶表示
装置を高歩留りで実現する上で利用価値の極めて大きい
ものである。As described above, the present invention has extremely high utility value in realizing a liquid crystal display device with high performance and high light resistance at a high yield.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（α）は液晶表示装置のマ）　ＩＪツクヌ配置図
、第１図（ｂ）は液晶表示装置の１つについての等価回
路、第２図（α）はｍ１図の装置における単位画素の平
面図、第２図（ｂ）はｍ２図（ｃ）　ＯＸ　−Ｘ　’ｌ
ｉＡ　断面図、１３− 第８図（α＞　、　＜ｂ）は従来工法によるガラス基板
とＴＰＴを形成したガラス基板との封止断面図、第４図
はガラスファイバーがＴＦＴを破壊している状態を示す
断面図、第５図は本発明による構造に基づいた液晶表示
装置の一実施例についての断面図である。 ５、・ＴＦ’Ｔ５・、蓄積用コンデンサ　７゜・液晶　
２１・Ｏガラス基板　２０６・・工Ｔ０２０７・・酸化
膜　２０８・・工Ｔ０２２・φ対向ガラス基板　る・・
ＩＴＯ４】−・柱状電気絶縁体。 以　上 出願人　セイコー電子工業株式会社 代理人　弁理士　最　上　務 １４−Figure 1 (α) is an IJ Tsuknu arrangement diagram of a liquid crystal display device, Figure 1 (b) is an equivalent circuit for one of the liquid crystal display devices, and Figure 2 (α) is a unit pixel in the device in Figure m1. The plan view of Figure 2 (b) is m2 diagram (c) OX -X 'l
iA Cross-sectional view, 13-Figure 8 (α>, <b) is a cross-sectional view of the sealing between a glass substrate and a glass substrate with TPT formed using the conventional method, and Figure 4 shows a state where the glass fiber has destroyed the TFT. FIG. 5 is a cross-sectional view of an embodiment of a liquid crystal display device based on the structure according to the present invention. 5.・TF'T5・、Storage capacitor 7゜・LCD
21・O glass substrate 206・・T0207・・Oxide film 208・・・T022・φ Opposing glass substrate Ru・・
ITO4]--Column electrical insulator. Applicant: Seiko Electronic Industries Co., Ltd. Agent Patent Attorney: Mutsumi Mogami 14-

Claims (1)

【特許請求の範囲】 （１）表示パネルを構成する一方の基板上に複数個の液
晶駆動用菓子をマトリックス状に配置した基板と、前記
基板の対向面に透明電極を付けたガラス電極板の周辺を
接着剤で接着することにより前記基板とガラス電極板と
が所定の間隙を有する状態が形成され、この間隙に液晶
材料を有する液晶表示装置において、前記液晶駆動用菓
子上に所望の間１！ｄｉＶｃ対応した高さの支柱を電気
絶縁体によ）形成し、該支柱によ）前記基板とガラス電
極板を所望の間隙に設定することを特徴とする液晶表示
装置。 （２）　前記電気絶縁体が、液晶駆動用素子における遮
光を成すことを特徴とする特許請求の範囲第１項に記載
の液晶表示装置。 （８）前記液晶駆動用菓子が、ゲート電極と、ント 一スおよびドレイン電極と、前記ゲート電極に接して形
成される絶縁膜と、該絶縁膜上に接して形成されかつそ
の両端がそれぞれ前記ソースおよびドレイン電極と接す
る半導体層とを有する薄膜トランジスタであることを特
徴とする特許請求の範囲第１項又は第２項に記載の液晶
表示装置。 （４）前記電気絶縁体が、所定の位置にフォトリソグラ
フィ一工程により形成された合成樹脂材料であることを
特徴とする特許請求の範囲第１項ないし第８項忙記載の
液晶表示装置。[Scope of Claims] (1) A substrate comprising a substrate on which a plurality of confections for liquid crystal driving are arranged in a matrix on one substrate constituting a display panel, and a glass electrode plate with transparent electrodes attached on the opposite surface of the substrate. By bonding the periphery with an adhesive, a state in which the substrate and the glass electrode plate have a predetermined gap is formed, and in a liquid crystal display device having a liquid crystal material in this gap, a desired gap 1 is placed on the liquid crystal driving confection. ! 1. A liquid crystal display device, characterized in that a pillar (made of an electrical insulator) is formed with a height corresponding to diVc, and a desired gap is set between the substrate and the glass electrode plate by the pillar. (2) The liquid crystal display device according to claim 1, wherein the electrical insulator serves as a light shield for a liquid crystal driving element. (8) The liquid crystal driving confectionery includes a gate electrode, a gate electrode and a drain electrode, an insulating film formed in contact with the gate electrode, and is formed in contact with the insulating film, and both ends of the confectionery are formed in contact with the insulating film. 3. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is a thin film transistor having a semiconductor layer in contact with source and drain electrodes. (4) The liquid crystal display device according to any one of claims 1 to 8, wherein the electrical insulator is a synthetic resin material formed in a predetermined position by a single step of photolithography.
JP59020490A 1984-02-07 1984-02-07 Liquid crystal display device Pending JPS60164723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59020490A JPS60164723A (en) 1984-02-07 1984-02-07 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59020490A JPS60164723A (en) 1984-02-07 1984-02-07 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPS60164723A true JPS60164723A (en) 1985-08-27

Family

ID=12028586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59020490A Pending JPS60164723A (en) 1984-02-07 1984-02-07 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPS60164723A (en)

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