JPS60161664A - Tightly adhered two-dimensional image readout device - Google Patents

Tightly adhered two-dimensional image readout device

Info

Publication number
JPS60161664A
JPS60161664A JP59017885A JP1788584A JPS60161664A JP S60161664 A JPS60161664 A JP S60161664A JP 59017885 A JP59017885 A JP 59017885A JP 1788584 A JP1788584 A JP 1788584A JP S60161664 A JPS60161664 A JP S60161664A
Authority
JP
Japan
Prior art keywords
layer
film
photoelectric conversion
dimensional image
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59017885A
Other languages
Japanese (ja)
Inventor
Satoshi Nishigaki
敏 西垣
Masataka Ito
政隆 伊藤
Shoshichi Kato
加藤　昭七
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59017885A priority Critical patent/JPS60161664A/en
Priority to US06/696,089 priority patent/US4644406A/en
Priority to DE19853503048 priority patent/DE3503048A1/en
Priority to GB08502559A priority patent/GB2154368B/en
Publication of JPS60161664A publication Critical patent/JPS60161664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
    • H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
    • H04N1/195—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a two-dimensional array or a combination of two-dimensional arrays

Abstract

PURPOSE:To realize a simple readout device, which needs no mechanical scanning mechanism, as well as to realize a tightly adhered two-dimensional image sensor, which is superior both in S/N ratio and in photo sensitivity, by a method wherein manuscript information is read out by a photo electric converting film by performing an exposure on the whole surface of the film. CONSTITUTION:An Al film 2 is evaporated on a pyrex substrate 1 and a P type amorphous silicon film 3-1 is made to deposit on the whole surface thereof by a plasma CVD method. The Al film 2 and the P type amorphous silicon film 3-1 are combinedly worked in a stripe type by an ordinary photolithography process. After the pattern was formed, an I type amorphous silicon film 3-2 is made to deposit thereon, and moreover, an N type amorphous layer 3-3 is made to deposit thereon for forming a photoelectric converting film having a P-I-N diode structure. An ITO (In2O3-SnO2) (5%) film is further evaporated on the semiconductor layer as a transparent conductive film 4 by performing an RF sputtering. A photoresist pattern is formed in such a way as to cross with the lower Al strip electrode 2 for forming an upper electrode pattern and an etch processing is simultaneously performed, including the N type amorphous silicon layer 3-3 too, for obtaining a two-dimensional photoelectric converting part.

Description

【発明の詳細な説明】 く技術分野〉 本発明は、原稿と同等の大きさをもつイメージ素子を用
いて、機械的あるいは光学的走査を行なわずに原稿の読
取りが可能な簡匣型二次元画像読取装置に藺する。[Detailed Description of the Invention] [Technical Field] The present invention is a simple two-dimensional bag-type two-dimensional device that can read a document without mechanical or optical scanning using an image element having the same size as the document. Error on image reading device.

〈従来技術〉 画像読取装置はファクシミリ、インテリジェントコピア
等における原稿の読取り用として知られている。従来、
この種の受光センサとしては、−次元の固体イメージ素
子（ＣＣＤあるいはＭＯＳ型）を用いて原稿像をスリッ
ト露光かつ縮小結像することにより対応した画像情報信
号を得ている。<Prior Art> Image reading devices are known for reading documents in facsimiles, intelligent copiers, and the like. Conventionally,
This type of light receiving sensor uses a -dimensional solid-state image device (CCD or MOS type) to obtain a corresponding image information signal by slit exposure and reduction imaging of an original image.

この−次元固体イメージ素子はＩＣ技術を使って作製さ
れ、８０ｍｍ程度の大きさの素子であり、原稿からの反
射光を受光部に導くには光路長の長い光学系を用いざる
を得す、装置の小型化が困難である。さらに、このよう
な装置では、光学系の複雑な調整が必要であり、画面周
辺部の光量低下。This -dimensional solid-state image device is manufactured using IC technology and is approximately 80 mm in size, and an optical system with a long optical path length must be used to guide the reflected light from the original to the light receiving section. It is difficult to downsize the device. Furthermore, such devices require complicated adjustment of the optical system, which reduces the amount of light at the periphery of the screen.

分解能の劣化といった問題も生じる。Problems such as deterioration of resolution also occur.

これらの問題点の改善のために、原稿幅と同一寸法の長
さの長尺イメージ素子を用い、ファイバーレンズアレイ
を用いて密着結像するいわゆる密着型イメージ素子も考
案されている。この様な素子では大型の光電変換部が必
要で、広い面積にわたる均一な光導電膜の形成が要求さ
れる。現在、長尺の一次元イメージ素子を作成するため
にＣｄ５−ＣｄＳｅ膜あるいは５ｅ−Ａｓ−Ｔｅ系非晶
質薄膜。In order to improve these problems, a so-called contact type image element has also been devised, which uses a long image element with a length equal to the width of the document and uses a fiber lens array to form a close image. Such devices require a large photoelectric conversion section and require the formation of a uniform photoconductive film over a wide area. Currently, Cd5-CdSe films or 5e-As-Te amorphous thin films are used to create long one-dimensional image elements.

非晶質Ｓｉ　薄膜等が提案されているが、この種の一次
元密着型イメージ素子を二次元画像の読取りに用いるに
は、原稿の走査または光源及びイメージ素子の走査が必
要となり、装置が複雑で大型化する。Amorphous Si thin films have been proposed, but in order to use this type of one-dimensional contact type image element to read two-dimensional images, it is necessary to scan the original or scan the light source and image element, making the device complicated. Increase in size.

く本発明の目的〉 本発明は従来のイメージ素子向１゛もつ種々の問題点１
−鑑みてなされたもので、大面積二次元センサを作成す
ることにより、機械的走査機構を必要としない簡便な読
取装置を提供し、また光電変換部をｐ−１−ｎ構造とし
て逆バイアス状態を利用することにより、ＳＮ比、光感
度にすぐれた密着型二次元イメージセンサを提供するこ
とにある。OBJECTS OF THE INVENTION The present invention solves various problems of conventional image devices.
- By creating a large-area two-dimensional sensor, a simple reading device that does not require a mechanical scanning mechanism is provided, and the photoelectric conversion section is set to a p-1-n structure in a reverse bias state. By utilizing this, it is an object of the present invention to provide a contact type two-dimensional image sensor with excellent SN ratio and light sensitivity.

〈実施例〉 以下本発明を図面により説明する。第１図は本発明によ
る二次元イメージ素子の一部破断斜視図であり、半導体
層の構造をより詳細に示すため第１図のＡ−Ａ’面で切
断して内部構造を明らかにしたのが第２図（ａ）である
。第２図（ｂ）は第１図の平面図（一部省略）である。<Example> The present invention will be explained below with reference to the drawings. FIG. 1 is a partially cutaway perspective view of a two-dimensional image element according to the present invention, and in order to show the structure of the semiconductor layer in more detail, the internal structure is revealed by cutting along the plane AA' in FIG. is shown in FIG. 2(a). FIG. 2(b) is a plan view (partially omitted) of FIG. 1.

図示の様に光電変換素子は透光性基板１上に設けられた
ストライプ状の透明電極（Ｘ電極）２゜半導体層３、及
び透明電極２と交叉するように設けられた上部ストライ
プ電極（Ｙ電極）４から構成される。上記Ｘ電極２とＹ
電極４の構成は逆転してもよく、その場合基板１は透光
性である必要のないことは云うまでもない。透光性基板
１としては例えばガラス基板を用いることが可能で、透
光性を要求しない場合はポリイミド樹脂等の耐熱性有機
フィルムあるいはセラミック基板が使用できる。透明電
極２としては酸化インジウム（Ｉｎ２０３）。As shown in the figure, the photoelectric conversion element includes a striped transparent electrode (X electrode) 2 provided on a transparent substrate 1, a semiconductor layer 3, and an upper striped electrode (Y (electrode) 4. The above X electrode 2 and Y
It goes without saying that the configuration of the electrodes 4 may be reversed, in which case the substrate 1 need not be translucent. For example, a glass substrate can be used as the light-transmitting substrate 1, and if light-transmitting properties are not required, a heat-resistant organic film such as polyimide resin or a ceramic substrate can be used. The transparent electrode 2 is indium oxide (In203).

酸化スズ（５ｎ０２）あるいはインジウム・スズ酸化物
（ＩＴＯ）等、ストライプ電極４にはＡＩ。The stripe electrode 4 is made of AI, such as tin oxide (5n02) or indium tin oxide (ITO).

Ｃｕ、Ｃｒ、Ａｕ、Ｐｔ、Ｉｎ、Ｉｎ−５ｎ合金、Ｉｎ
−Ｇａ合金、Ｎｉ−Ｃｒ合金等を使用する。半導体層３
はｐｉｎ構造とし、非晶質水素化シリコンにより形成す
る。Cu, Cr, Au, Pt, In, In-5n alloy, In
-Ga alloy, Ni-Cr alloy, etc. are used. semiconductor layer 3
has a pin structure and is made of amorphous hydrogenated silicon.

第３図に等価回路及び走査回路系を示す。上記素子のＸ
及びＹ電極は画像情報を読み出すだめのスイッチング素
子５，６に夫々接続され、各電極に接続されたスイッチ
ング素子のオン・オフ動作は水平及び垂直走査回路７．
８からの制御信号によって行われる。スイッチング素子
としては、たとえばＣ−ＭＯ３ｊ−ランジスタで構成し
、各ゲートをシフトレジスタに接続する。FIG. 3 shows an equivalent circuit and a scanning circuit system. X of the above element
and Y electrodes are respectively connected to switching elements 5 and 6 for reading image information, and the on/off operation of the switching elements connected to each electrode is controlled by a horizontal and vertical scanning circuit 7.
This is done by control signals from 8. The switching element is composed of, for example, a C-MO3j-transistor, and each gate is connected to a shift register.

上記構造の光電変換素子の電圧−電流特性を第４図に、
出力電流の照度依存性を第５図に、光応答速度の逆バイ
アス依存性を第６図に示す。尚第６図に示しだ光応答速
度の逆バイアス依存性における立上シ（Ｌｏｎ）、立下
り（［ｏｆｆ　）の定義を第７図に示す。これらのデー
タから明らかなように本素子ば５Ｖ以下の低電位での駆
動が可能であり、明暗比（静特性）が１０〜ＩＯときわ
めて大きな値が得られる。また、光応答特性も非常に優
れており、立ち上がり（９０％）、立ち下がり（９０係
）応答性ともに５０μ就以下と著しく速い値の得られる
のが本素子の特徴である。The voltage-current characteristics of the photoelectric conversion element with the above structure are shown in Figure 4.
FIG. 5 shows the illuminance dependence of the output current, and FIG. 6 shows the reverse bias dependence of the light response speed. Incidentally, FIG. 7 shows the definitions of the rising edge (Lon) and the falling edge ([off) in the reverse bias dependence of the optical response speed shown in FIG. 6. As is clear from these data, this device can be driven at a low potential of 5 V or less, and a very large contrast ratio (static characteristic) of 10 to IO can be obtained. Furthermore, the photoresponse characteristics are also very excellent, and a feature of the present device is that both rise (90%) and fall (90%) responsivity are extremely fast, less than 50 μm.

本発明による素子の光電変換膜は、非晶質水素化シリコ
ンで構成されているため、ｐ層あるいはｎ層の固有体積
抵抗が低抵抗となる傾向があり、画素間のリークの原因
となる場合もあるので、必要に応じてｐ層あるいはｎ層
は上下の帯状電極と同形状のパターンに分割加工する必
要がある。この際、エツチング工程による素子特性への
影響は小さい。なお、光照射側の層は、この層での光損
失を最小限にとどめるため５０λ〜＋０００λの薄層と
する必要があり、′また、１層はピンホール等の欠陥を
なくし電流のまわり込みをなくするため、０．５μｍ程
度以上５μｍ以下、好ましくは１〜３μｍ程度の膜厚を
もち、ｌＯΩ・ｍ以上、好１しくけ１０Ω・α程度の固
有抵抗が必要となる。以下、具体的な実施例を示す。Since the photoelectric conversion film of the device according to the present invention is composed of amorphous hydrogenated silicon, the specific volume resistance of the p-layer or n-layer tends to be low, which may cause leakage between pixels. Therefore, it is necessary to divide the p-layer or n-layer into patterns having the same shape as the upper and lower band-shaped electrodes, if necessary. At this time, the effect of the etching process on the device characteristics is small. Note that the layer on the light irradiation side needs to be a thin layer of 50λ to +000λ in order to minimize optical loss in this layer. In order to eliminate this, it is necessary to have a film thickness of about 0.5 μm or more and 5 μm or less, preferably about 1 to 3 μm, and a specific resistance of about 10Ω·m or more, preferably about 10Ω·α. Specific examples will be shown below.

〔実施例１〕 基板１として厚さ１１朔のパイレックスガラス基板（’
１４０Ｘ７０）を用い、この上に約２，０００久の膜厚
のＡＩ２を蒸着し、この上に全面にプラズマＣＶＤ法に
てｐ形の非晶質シリコン膜３−１（第２図参照）を１，
０００λ堆積させた。次に、通常の７オトリングラフイ
ープロセスにより、ＡＩ及びｐ形の非晶質シリコン膜を
４本／調の密度でストライプ状に加工した。エツチング
液としてはＨＦ−ＨＮＯ３−ＣＨ５ＣＯＯＨ系エッチャ
ントを用いたが、他にＣＦ４による反応性イオンエツチ
ング等のドライプロセスでも加工が可能であることは云
うまでもない。パターン形成後この上にｎ形３−２、さ
ら（Ｃｎ形の非晶質シリコン層３−３を各々約１１１ｍ
及び２００ｘの厚さに堆積させｐ−１−ｎダイオード構
造を有する光電変換膜を形成した。[Example 1] As the substrate 1, a Pyrex glass substrate ('
140 x 70), a film of approximately 2,000 mm thick AI2 is deposited thereon, and a p-type amorphous silicon film 3-1 (see Fig. 2) is deposited on the entire surface using the plasma CVD method. 1,
000λ was deposited. Next, the AI and p-type amorphous silicon films were processed into stripes at a density of 4 films/tone using a normal 7-otolithography process. Although a HF-HNO3-CH5COOH etchant was used as the etching solution, it goes without saying that other dry processes such as reactive ion etching using CF4 can also be used. After pattern formation, an n-type 3-2 layer and a further (Cn-type amorphous silicon layer 3-3) each having a thickness of about 111 m are formed on the pattern.
A photoelectric conversion film having a p-1-n diode structure was formed by depositing the photoelectric conversion film to a thickness of 200×.

上記非晶質シリコン膜の作成条件は以下の通りである。The conditions for forming the amorphous silicon film are as follows.

基板温度２５０℃、放電圧力０．５　Ｔｏｒ＋高周波電
力１００　Ｗ　（８０ｍＷ／ｕ＋ｆ　）の条件下で、ｐ
形非晶質シリコン層はＢ２　Ｈ６とＳｉＨ４の体積比が
１，０００．ｐｐｍの混合ガスを■２で１０係程度に希
釈したもの、１形はＳｉＨ４をＢ２で３０チに希釈した
混合ガス、さらｌｃｎ形はＰＨ３とＳｉＨ４の体積比が
１０．ＯＯＯｐｐｍの混合ガスを２０係程度に希釈した
ものをグロー放電分解によって形成した。Under the conditions of substrate temperature 250°C, discharge pressure 0.5 Tor + high frequency power 100 W (80 mW/u + f), p
The amorphous silicon layer has a volume ratio of B2H6 and SiH4 of 1,000. ppm mixed gas diluted to about 10 parts with ■2, type 1 is a mixed gas of SiH4 diluted with B2 to about 30 parts, and lcn type is a mixed gas with a volume ratio of PH3 and SiH4 of 10. A mixed gas of OOOppm diluted to about 20% was formed by glow discharge decomposition.

上記作成した半導体層上に更に透明導電膜４としてＩ　
Ｔ　Ｏ（Ｉｎ２０Ｂ−５ｎ０２（５％））をＲＦスパッ
タリングで約１．ｏｏｏＸ蒸着した。上部電極パターン
を形成するために、前述の下部Ａ１ストライプ電極２と
交叉する様に、４本／１ｒｎの密度でフォトレジストパ
ターンを形成し、ｎ形弁晶質シリコン層８−３も含めて
同時にエツチング加工し、二次元の光電変換部を得た。I further formed a transparent conductive film 4 on the semiconductor layer created above.
T O (In20B-5n02 (5%)) was deposited by RF sputtering at approximately 1. oooX was deposited. In order to form the upper electrode pattern, a photoresist pattern is formed at a density of 4 lines/1rn so as to intersect with the lower A1 stripe electrode 2 described above, and a photoresist pattern is formed at the same time including the n-type crystalline silicon layer 8-3. A two-dimensional photoelectric conversion section was obtained by etching.

なお作成した光電変換部の大きさは約１０１００Ｘ１３
０であり、電極数は４００本（Ｘ電極）Ｘ５２０本（Ｙ
電極）となった。各電極を第３図に示すごとく駆動用回
路７，８に接続し、第８図の様な装置系を用いて上記構
造の光電変換素子Ｂの画像読取試験を行った。原稿Ａは
半透明なものを用い、全面密着露光により作像。The size of the created photoelectric conversion section is approximately 10100 x 13
0, and the number of electrodes is 400 (X electrode) x 520 (Y
electrode). Each electrode was connected to driving circuits 7 and 8 as shown in FIG. 3, and an image reading test was conducted on the photoelectric conversion element B having the above structure using an apparatus system as shown in FIG. Original A is semi-transparent, and the image is created by full-surface contact exposure.

光電変換した画像信号を読み出して画像信号処理回路Ｃ
で適宜処理し、ディスプレー膜上に表示した。Image signal processing circuit C reads out the photoelectrically converted image signal
The sample was treated as appropriate and displayed on a display film.

〔実施例２〕 実施例１と逆の素子構成とした。即ちパイレックスガラ
ス基板上にまずＲＦスパッタリングでＩＴＯを約９００
λ蒸着し、次にプラズマＣＶＤ法にてｐ形弁晶質シリコ
ン膜をｓｏＸ形成した。[Example 2] The element configuration was opposite to that of Example 1. That is, about 900% of ITO was first deposited on a Pyrex glass substrate by RF sputtering.
After λ evaporation, a p-type crystalline silicon film was formed using soX using a plasma CVD method.

これらの薄膜を実施例１と同様の手順で４本／謔の密度
でストライプ状に加工した。パターン形成された膜上に
ｎ形さらにｎ形の非晶質シリコン膜を所定の反応性ガス
を用いてグロー放電分解し、各々約３μｍ及びａ、ｏｏ
ｏＸの厚さ堆積させた。ｎ層、ｆ［ＡＩを約２ｏｏｏＸ
スパ２ツタ蒸着し、このｎ層と共に下部ＩＴＱストライ
プ電極２と交叉するように同一の密度でストライプ状に
エツチングした。なお、非晶質シリコン膜の作成条件は
実施例１とほぼ同じである。These thin films were processed into stripes using the same procedure as in Example 1 at a density of 4 strips/layer. N-type and n-type amorphous silicon films are decomposed by glow discharge using a predetermined reactive gas on the patterned film to form a film of about 3 μm, a, and oo, respectively.
A thickness of oX was deposited. n layer, f[AI approximately 2oooX
Two spat vines were deposited and etched together with this n-layer into a stripe pattern with the same density so as to intersect with the lower ITQ stripe electrode 2. Note that the conditions for forming the amorphous silicon film are almost the same as in Example 1.

第３図のごとく駆動回路系を接続し、実施例１と同様の
試験を試みだところ、瞬時にして画像をディスプレー上
に再現できた。When the drive circuit system was connected as shown in FIG. 3 and the same test as in Example 1 was attempted, an image could be instantly reproduced on the display.

〔実施例３〕 ブロッキングダイオード或いは薄膜トランジスタを設け
た実施例を示す。[Embodiment 3] An embodiment in which a blocking diode or a thin film transistor is provided will be described.

第９図は本実施例による画像読み取り用二次元イメージ
素子の断面図である。本実施例は主に、感光部であ−る
フォトダイオード部９とクロストーク電流を防ぐブロッ
キングダイオード部ＩＯから成る。第１０図はブロッキ
ングダイオードを用いない場合の等価回路であるが、こ
の場合、例えば画素Ｄ１１に対して近隣のフォトダイオ
ードを通して（ａの経路を通シ周囲の電流が混入する恐
れがある。ところが、ブロッキングダイオードを設けて
おけば、第１＋図に示したように、光像によって生じた
フォトダイオードＤｐの電荷は必ずブロッキングダイオ
ードＤｂを逆バイアス状態とするため、クロス１トーク
電流を最小限とすることができる。以下、具体的な素子
の作成法を説明する。基板ｌｌ上にフォトダイオード部
９は実施例１と同様のプロセスで作成する。ＩＴＵ透明
電極１２は１．５００Ｘ　、ｐ形１３．Ｉ形１４．及び
ｎ形弁晶質シリコン膜Ｉ５は各々１００久、Ｉｐｍ、３
００Ａ　の厚さとした。この上にブロッキングダイオー
ド１０をフォトダイオード９と接続して形成する。即ち
ブロッキングダイオード部９に光が入射するのを妨げる
境界部に遮光電極Ｉ６をスパッタ蒸着し、引き続きｎ形
弁晶質シリコン層１８を堆積させる。FIG. 9 is a sectional view of the two-dimensional image device for image reading according to this embodiment. This embodiment mainly consists of a photodiode section 9, which is a photosensitive section, and a blocking diode section IO, which prevents crosstalk current. FIG. 10 shows an equivalent circuit when no blocking diode is used. In this case, for example, there is a risk that surrounding current may enter the pixel D11 through the neighboring photodiode (path a). However, If a blocking diode is provided, as shown in Figure 1+, the charge on the photodiode Dp generated by the optical image will always put the blocking diode Db in a reverse bias state, so the cross-1 talk current can be minimized. Hereinafter, a specific method for manufacturing the element will be explained.The photodiode section 9 is created on the substrate 11 by the same process as in Example 1.The ITU transparent electrode 12 is 1.500X, p-type 13.I Type 14. and n-type crystalline silicon film I5 are each 100 years old, Ipm, 3
The thickness was 00A. A blocking diode 10 is connected to the photodiode 9 and formed thereon. That is, a light-shielding electrode I6 is sputter-deposited at the boundary portion that prevents light from entering the blocking diode portion 9, and then an n-type crystalline silicon layer 18 is deposited.

これらの層はフォトダイオード部９と同じ密度４本／＝
でエツチングしストライプ状に分割した後、層間絶縁層
５１３Ｎ４１７をプラズマＣＶＤ法そ形成する。この層
間絶縁層には前記分割パターンと一致したストライプ状
のコンタクト用パターンを形成し、ｉ形及びｐ形弁晶質
シリコン層１９．２０を堆積させる。非晶質シリコン層
の膜厚と作成条件はフォトダイオード部とほぼ同じであ
る。最後に、Ａ１をスパッタ蒸着し、透明電極１２と直
交する様ＩＣｎ層を含めてエツチングし、上部ストライ
ブ電極２１を形成する。クロストーク防止用のブロッキ
ングダイオードは、すぐれた整流比が要求されるが２■
で約１０桁の整流比がとれている。These layers have the same density as the photodiode section 9: 4/=
After etching and dividing into stripes, an interlayer insulating layer 513N417 is formed by plasma CVD. A striped contact pattern matching the division pattern is formed in this interlayer insulating layer, and i-type and p-type crystalline silicon layers 19 and 20 are deposited. The film thickness and manufacturing conditions of the amorphous silicon layer are almost the same as those of the photodiode section. Finally, A1 is sputter-deposited and etched including the ICn layer so as to be orthogonal to the transparent electrode 12, thereby forming the upper stripe electrode 21. Blocking diodes for crosstalk prevention require an excellent rectification ratio, but 2
A rectification ratio of approximately 10 digits is obtained.

本素子を駆動回路に接続し、第８図の装置で画像読み取
りを行ったが、２００ＫＨｚのクロックで１フレームを
約１秒で読み取った。蓄積時間は約３ｍＳでｌ　ＯＯｌ
ｕｘの光源に対し２０　ｄＢ以上の明暗比を得た。This device was connected to a drive circuit and an image was read using the apparatus shown in FIG. 8, and one frame was read in about 1 second with a clock of 200 KHz. The storage time is about 3mS.
A contrast ratio of more than 20 dB was obtained for the ux light source.

〈効　果〉 以上本発明によれば、大面積イメージ素子を用いて極め
て簡単な機構の原稿読取装置ができる。<Effects> According to the present invention, a document reading device with an extremely simple mechanism can be obtained using a large-area image element.

更に、高感度かつ高速光応答性を有する非晶質シリコン
を光電変換部に用いることにより、通常の一次元イメー
ジ素子ではおよそ実現不可能な超高速読取装置の作製が
可能となる。また、光電変換部にほぼ等倍の作像を行う
ため、高度の微細加工技術を必要とせず、電極サイズを
比較的大きく設計でき素子作成が容易という利点がある
。Furthermore, by using amorphous silicon, which has high sensitivity and high-speed photoresponsiveness, for the photoelectric conversion section, it becomes possible to fabricate an ultra-high-speed reading device that is almost impossible to achieve with a normal one-dimensional image element. Furthermore, since an image of approximately the same size is formed on the photoelectric conversion section, there is an advantage that advanced microfabrication technology is not required, the electrode size can be designed relatively large, and element fabrication is easy.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明による一実施例の光電変換素子構造を示
す斜視図、第２図（ａ）は同Ａ−Ａ’断面図、第２図（
ｂ）は同平面図、第３図は本発明にょる光電変換素子の
駆動回路図、第４図、第５図、第６図及び第７図は本発
明による光電変換素子の動作特性を示す図、第８図は本
発明による光電変換素子を機器に結合した構成図、第９
図は本発明による他の実施例を示す光電変換素子構造を
示す図、第１Ｏ図及び第１１図は回路動作を説明するだ
めの図である。 １：基板　２：Ｘ電極　３：光電変換膜　４：Ｙ電極　
７，８：走査回路　９：フォトダイオード部　１０ニブ
ロッキングダイオード部代理人　弁理士　福　士　愛　
彦（他２名）ｕｓ　２図 第４図 第５図 印１）Ｕ置方ＣＶ） 第６図 ｔｏｎ　ｔｏｆ７ 第７　Ｗ 第９図 第１Ｏ図 第１１ｖＡFIG. 1 is a perspective view showing the structure of a photoelectric conversion element according to an embodiment of the present invention, FIG.
b) is a plan view of the same, FIG. 3 is a drive circuit diagram of a photoelectric conversion element according to the present invention, and FIGS. 4, 5, 6, and 7 show operating characteristics of a photoelectric conversion element according to the present invention. 8 is a configuration diagram in which a photoelectric conversion element according to the present invention is coupled to a device, and FIG.
The figure shows the structure of a photoelectric conversion element according to another embodiment of the present invention, and FIGS. 1O and 11 are diagrams for explaining the circuit operation. 1: Substrate 2: X electrode 3: Photoelectric conversion film 4: Y electrode
7, 8: Scanning circuit 9: Photo diode section 10 Blocking diode section agent Patent attorney Ai Fukushi
Hiko (2 others) US 2 Figure 4 Figure 5 Mark 1) U placement CV) Figure 6 ton tof7 7th W Figure 9 Figure 1O Figure 11vA

Claims (5)

【特許請求の範囲】[Claims] （１）光学情報を光の強度に応じた電気信号に変換する
画像読取素子において、絶縁性基板上に形成された帯状
電極（Ｘ）、ｐｉｎ構造を持つ光電変換膜および前記帯
状電極（Ｘ）と交叉する関係に配設された帯状電極（Ｙ
）をこの順に積層し、前記帯状電極のうち少なくとも一
方は透明電極から成る光電変換素子と、信号読み出しお
よび信号処理回路を備えてなり、前記光電変換膜は全面
露光により原稿情報を読み出すことを特徴とする密着型
二次元画像読取装置。(1) In an image reading element that converts optical information into an electrical signal according to the intensity of light, a strip-shaped electrode (X) formed on an insulating substrate, a photoelectric conversion film having a pin structure, and the strip-shaped electrode (X) A strip electrode (Y
) are laminated in this order, and at least one of the strip electrodes is provided with a photoelectric conversion element made of a transparent electrode, and a signal readout and signal processing circuit, and the photoelectric conversion film reads document information by full-surface exposure. A contact type two-dimensional image reading device. （２）請求範囲第１項において、光電変換膜は非晶質シ
リコンで形成されたｐ−１−ｎ構造を有し、逆バイアス
されて入射光量に対応した電流を出力し、画像情報が形
成されることを特徴とする密着型二次元画像読取装置。(2) In claim 1, the photoelectric conversion film has a p-1-n structure formed of amorphous silicon, is reverse biased and outputs a current corresponding to the amount of incident light, and image information is formed. A close-contact two-dimensional image reading device characterized by: （３）請求範囲第１項又は第２項に記載の光電変換膜は
、ｐ層およびまたはｎ層がこれらに接する帯状電極とほ
ぼ同形状の帯状に分割されてなり、１層は連続的１（形
成されていることを特徴とする密着型二次元画像読取：
装置。(3) The photoelectric conversion film according to claim 1 or 2 is formed by dividing the p-layer and/or n-layer into strips having substantially the same shape as the strip electrodes in contact with them, and one layer is a continuous one. (Contact two-dimensional image reading characterized by the formation of:
Device. （４）請求範囲第１項、第２項又は第３項に記載の光電
変換膜において、ｎ層の固有抵抗値は１０６Ω・α以下
であシ、ｎ層はこれに接する帯状電極と同形状に分割さ
れてなり、１層及びｐ層の固有抵抗値は１０Ω・ｃｔｎ
以上であり、ｐ層ｉ層とも連続的に形成されていること
を特徴とする密着型二次元画像読取装置。(4) In the photoelectric conversion film according to claim 1, 2, or 3, the n-layer has a specific resistance value of 10 6 Ω·α or less, and the n-layer has the same shape as the strip-shaped electrode in contact therewith. The specific resistance value of the 1st layer and p layer is 10Ω・ctn
The above is a contact type two-dimensional image reading device characterized in that the p layer and the i layer are formed continuously. （５）請求範囲第１項、第２項、第３項又は第４項に記
載の光電変換膜において、光像照射側となる層（ｐ層あ
るいはｎ層）の膜厚ば５層久以上＋、ｏｏｏＸ以下、１
層の膜厚が０．５μｍ以上５μｍ以下であることを特徴
とする密着型二次元画像読取装置。(5) In the photoelectric conversion film according to claim 1, 2, 3, or 4, the thickness of the layer (p layer or n layer) on the light image irradiation side is 5 layers or more. +, oooX or less, 1
A contact type two-dimensional image reading device, characterized in that the thickness of the layer is 0.5 μm or more and 5 μm or less.
JP59017885A 1984-02-01 1984-02-01 Tightly adhered two-dimensional image readout device Pending JPS60161664A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59017885A JPS60161664A (en) 1984-02-01 1984-02-01 Tightly adhered two-dimensional image readout device
US06/696,089 US4644406A (en) 1984-02-01 1985-01-29 Large scale contact type image reading unit using two-dimensional sensor array
DE19853503048 DE3503048A1 (en) 1984-02-01 1985-01-30 TWO DIMENSIONAL IMAGE READER
GB08502559A GB2154368B (en) 1984-02-01 1985-02-01 Image reading unit using two-dimensional sensor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59017885A JPS60161664A (en) 1984-02-01 1984-02-01 Tightly adhered two-dimensional image readout device

Publications (1)

Publication Number Publication Date
JPS60161664A true JPS60161664A (en) 1985-08-23

Family

ID=11956156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59017885A Pending JPS60161664A (en) 1984-02-01 1984-02-01 Tightly adhered two-dimensional image readout device

Country Status (4)

Country Link
US (1) US4644406A (en)
JP (1) JPS60161664A (en)
DE (1) DE3503048A1 (en)
GB (1) GB2154368B (en)

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Also Published As

Publication number Publication date
GB2154368A (en) 1985-09-04
GB8502559D0 (en) 1985-03-06
GB2154368B (en) 1988-05-18
US4644406A (en) 1987-02-17
DE3503048C2 (en) 1992-09-03
DE3503048A1 (en) 1985-08-01

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