JPS60160561U - semiconductor pressure sensor - Google Patents

semiconductor pressure sensor

Info

Publication number
JPS60160561U
JPS60160561U JP4865884U JP4865884U JPS60160561U JP S60160561 U JPS60160561 U JP S60160561U JP 4865884 U JP4865884 U JP 4865884U JP 4865884 U JP4865884 U JP 4865884U JP S60160561 U JPS60160561 U JP S60160561U
Authority
JP
Japan
Prior art keywords
pressure sensor
semiconductor pressure
diaphragm
resistance region
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4865884U
Other languages
Japanese (ja)
Inventor
孝男 橋本
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP4865884U priority Critical patent/JPS60160561U/en
Publication of JPS60160561U publication Critical patent/JPS60160561U/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

図は半導体圧力センサを示し、第1図は従来例、第セ図
は本案の実施例の断面図である。 4・・・半導体薄板、4a・・・ダイヤフラム部、4b
・・・支持部、5・・・抵抗領域、6・・・絶縁膜。
The figures show semiconductor pressure sensors, with FIG. 1 being a sectional view of a conventional example and FIG. 4...Semiconductor thin plate, 4a...Diaphragm part, 4b
... Support part, 5... Resistance region, 6... Insulating film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一枚の半導体薄板で肉薄のダイヤグラム部と核部を囲む
肉厚の支持部を構成し、少なくとも前記ダイヤプラム部
の主表面に前記抵抗領域を形成し、前記ダイヤグラム部
主表面に前記抵抗領域の表面を含めて絶縁性保護膜を密
着させた保護膜と同質で等厚の絶縁膜をダイヤフラム部
の裏面にも設けた半導体圧力センサ。
A thin semiconductor plate constitutes a thin diagram portion and a thick support portion surrounding the core portion, the resistance region is formed on at least the main surface of the diaphragm portion, and the resistance region is formed on the main surface of the diagram portion. A semiconductor pressure sensor that has an insulating protective film in close contact with the protective film, including the surface, and an insulating film of the same quality and thickness on the back side of the diaphragm.
JP4865884U 1984-04-03 1984-04-03 semiconductor pressure sensor Pending JPS60160561U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4865884U JPS60160561U (en) 1984-04-03 1984-04-03 semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4865884U JPS60160561U (en) 1984-04-03 1984-04-03 semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS60160561U true JPS60160561U (en) 1985-10-25

Family

ID=30565123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4865884U Pending JPS60160561U (en) 1984-04-03 1984-04-03 semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS60160561U (en)

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