JPS60153212A - Tuning fork type crystal resonator - Google Patents
Tuning fork type crystal resonatorInfo
- Publication number
- JPS60153212A JPS60153212A JP900684A JP900684A JPS60153212A JP S60153212 A JPS60153212 A JP S60153212A JP 900684 A JP900684 A JP 900684A JP 900684 A JP900684 A JP 900684A JP S60153212 A JPS60153212 A JP S60153212A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tuning fork
- crystal resonator
- thin film
- type crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 230000005284 excitation Effects 0.000 claims description 23
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 42
- 239000010931 gold Substances 0.000 description 12
- 239000012528 membrane Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 240000001548 Camellia japonica Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 235000018597 common camellia Nutrition 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002560 therapeutic procedure Methods 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
ｒ技術分計〕
本発明はフォト・工・・ノ子ングにより形成される音叉
型水晶振動子の金属薄膜の構成に門する。[Detailed Description of the Invention] Technical Details] The present invention is directed to the structure of a metal thin film of a tuning fork type crystal resonator formed by photo-etching.
従来のフォトエ・ソチング応用技術によ−て製造される
音叉型水晶振動子の電極構造を演１図（ハ）〜■）に示
す。同図（Ａ）（ｌ−を音叉型水晶振動子の雷１ゲ構造
を模式的に書いた平面図であり、同図（Ｂ）、（（り、
Φ）は同図（Ａ）に示すｘ、 ’−ｘ、’、Ｙ、 −Ｙ
、’、 Ｚ、 −ｚ、’でそわぞれ切断した場合の片側
の断面図である。１は音叉型水晶振動子を示し、２け該
音叉型水晶発振片１上に構成さねた励振用金属薄膜であ
る。３け該音叉型水晶発振片１上に形成さハた周波数調
整部、４は同じ〈励振電極部、５は支持部を示す、同図
（Ｂ）ｔ （Ｃ）、 ’ （Ｄ）の６〜１１は電接用の
金属薄膜を示し、６け０ｒｌＩ！Ｊ、７けＡｕ ｑｔＪ
、８けＣｒ膜、９けＡｒｉ、 嘩である、Ｙ、 −Ｙ′
１に示す如く、励振雷療部４には４層から成る金属薄膜
が形成さｈているーすなわち、フォト・エツチング技術
によって形成された音叉型水晶発掘片１けその表裏面に
Ｃｒ膜６、Ａｕ［７を残しだ状態で、更に電解効率を高
めるための側面電極形成が成される。通常１ｄ Ｃｒ膜
、勉膜のスパッタリングによって平面と同時に側面への
回り込みにより金属薄膜の形Ｗが成される。したがりて
、表。The electrode structure of a tuning fork type crystal resonator manufactured by conventional photolithography technology is shown in Figures 1(c) to 2). Figure (A) is a plan view schematically depicting the lightning structure of a tuning fork crystal resonator;
Φ) is x, '-x,', Y, -Y shown in Figure (A)
, ', Z, -z,' are cross-sectional views of one side, respectively. Reference numeral 1 denotes a tuning fork type crystal resonator, and two metal thin films for excitation are formed on the tuning fork type crystal oscillator piece 1. There are three frequency adjustment parts formed on the tuning fork type crystal oscillator piece 1, 4 is the same excitation electrode part, and 5 is the support part. ~11 indicates a metal thin film for electrical connection, and 6 digits 0rlI! J, 7ke Au qtJ
, 8-layer Cr film, 9-layer Ari, Y, -Y'
As shown in Fig. 1, a metal thin film consisting of four layers is formed in the excitation lightning therapy section 4; that is, a Cr film 6, an Au film on the front and back surfaces of a tuning fork-shaped crystal excavation piece 1 formed by photo-etching technology. [With 7 remaining, side electrodes are formed to further improve electrolytic efficiency. Usually, by sputtering a 1d Cr film or a thin film, the shape W of the metal thin film is formed by wrapping around the side surface as well as the plane surface. Therefore, table.
裏面には初期の金属薄膜２Ｍ６．７が、更にスバ・ツタ
による金属８１Ｉ膜８．９の合削４層が形成さｈる。又
、側面にも同図（Ｂ）、 （ｃｌ、（Ｄ）に示す如ぐ８
〜１１の４層の金属薄膜が形成きれる。その後で型棒分
割のフォトエンチングにより、同図（Ａ）〜ＣＤ）に示
す如く官給構造が形成されるわけである。以上のように
、従来の音叉型水晶振動子１土に形成官りている金属薄
膜は４層構造となっている。On the back surface, an initial metal thin film 2M6.7 is formed, and further four layers of a metal 81I film 8.9 formed by suba-ivy are formed. In addition, the same figure 8 shown in (B), (cl, (D)) is also on the side.
A four-layer metal thin film of ~11 can be formed. Thereafter, by photo-etching the die rod division, the government-issued structure as shown in FIGS. As described above, the metal thin film formed on the conventional tuning fork type crystal resonator has a four-layer structure.
しかしながら、従来のように水晶発振片の励振電極部４
に４ＷＶの金属薄膜を形成することは振動エネルギーロ
スを増大させる誘因にもなることから水晶振動子のクリ
スタル・インビー〃゛ンス（以後略して、０■値と呼ぶ
）の改善には限界があった。However, as in the conventional case, the excitation electrode part 4 of the crystal oscillation piece
Forming a 4WV metal thin film on a crystal oscillator also causes an increase in vibrational energy loss, so there is a limit to improving the crystal impedance (hereinafter referred to as the 0 value) of a crystal resonator. Ta.
本発明は、水晶発振片に形成される金属薄膜の新規な構
成により前述のＣａ値の改善を目的とするものであり、
小型でＣａ値の小さい高性能な音叉型水晶振動子を提供
することにある。更には、Ｃａ値の改善に併なう消費電
流の低減により、長寿命化が計れる腕時計用水晶振動子
の提供にある。The present invention aims to improve the above-mentioned Ca value by a new configuration of a metal thin film formed on a crystal oscillation piece.
The object of the present invention is to provide a high-performance tuning fork type crystal resonator that is small in size and has a low Ca value. Furthermore, it is an object of the present invention to provide a crystal oscillator for a wristwatch whose life can be extended by reducing current consumption along with improving the Ca value.
本発明の音叉型水晶振動子は、周波数調整部、励振電極
部及７Ｙ支持部を有１２、ｍ前記支持部はリード端子と
固着しており、少なくとも前記支持部には４層からなる
金杯薄膜が形成され、その金属薄膜とリード端子とが固
着されていることｆｒ−特徴とする。The tuning fork type crystal resonator of the present invention has a frequency adjustment section, an excitation electrode section, and a 7Y support section. is formed, and the metal thin film and the lead terminal are firmly fixed.
以下、本発明につ（ハで実施例に基づ＾詳細に説明する
。Hereinafter, the present invention will be explained in detail based on examples in Section C.
第２図は、大発明の実施例を示す平面図及び断面図であ
る、
ｐＸ２図（Ａ＞において、１２Ｆｉ音叉型水晶発振片、
１３け該音叉型水晶発振片１２士に形成された金属薄膜
、１４け該金属薄膜１３から放る周波数調整部、１５は
同じく励振電極部、１６は支持部である。又、同図（Ｂ
）、 Ｕ 、 （Ｄ）は同図（Ａ）の中ｘ２− ｘ’２
Ｙ２−Ｙ′２、ｚ２−ｚ’２で各々切断した場合の片側
の断面図であり、１７〜２２は各切断部に見られる金属
薄膜層で、１７．１９．２１ＨＣＣｒ膜、１８，２０．
２２はＡｕ膜を示すものである。Figure 2 is a plan view and a cross-sectional view showing an embodiment of the great invention, pX2 diagram (A> shows a 12Fi tuning fork crystal oscillator piece,
13 metal thin films formed on the 12 tuning fork type crystal oscillator pieces, 14 frequency adjustment parts emitted from the metal thin films 13, 15 the same excitation electrode part, and 16 a support part. Also, the same figure (B
), U, (D) is x2-x'2 in the same figure (A)
This is a cross-sectional view of one side when cut along Y2-Y'2 and z2-z'2, and 17 to 22 are metal thin film layers seen at each cut section, 17.19.21HCCr film, 18, 20.
22 indicates an Au film.
同図（Ｄ）に示す如く、支持部１６（ｚ２− ｚ’、断
面）はＣｒ噂−Ａｕ膜−Ｃｒ膜−Ａｕ膜の４層構造であ
り励振り電極部１５ （Ｙ２− Ｙ’２断面）及び周波
数調整部１４ （ｘ２− ｘ′２ｈ面）は表裏面をＣｒ
膜−Ａ’ｌＺ膜の２Ｍ構造としている。すなわち、励振
雷極部１５０表、裏面の雷療膜構造全Ｏｒ膜−Ａｔ＋、
＃ ノ２ ＷＩ化にすることＫより水晶振動子の振動
エネルギーロスを軽減し、Ｃａ値の向上を計るものであ
る。一般に、水晶振動子の励振型棒用金属薄膜はＡｕ膜
のみで構成すればＣａ値の良い水晶振動子となり得るが
、Ａｕ膜のみでは素材である水晶への密着力が弱いため
、該水晶と密着力の強いＣｒ膜をＡ’＋４膜の下地膜と
して採用している。１．かじながら、このことによって
Ｃａ値を劣化さねでいるのも周知の事実である。１．だ
がって、第２図に示す本発明の音叉型水２９発撮動子に
おいても、励振電極部１５をできることならＡ？／膜１
層の入の構成がより効果的であるが前述の如く弊害があ
るため、第２図に示す如＜Ｃ！ｒｌ草１９および２１’
？下地膣とし、Ｃｒ膜−Ａ？１．膜の２層構造とするわ
けである、つぎに第３図に本発明になる励振電極部の表
。As shown in the same figure (D), the support part 16 (z2-z', cross section) has a four-layer structure of Cr layer-Au film-Cr film-Au film, and the excitation electrode part 15 (Y2-Y'2 cross section) ) and the frequency adjustment section 14 (x2-x'2h surface) are made of Cr.
It has a 2M structure of film-A'lZ film. That is, the lightning therapy membrane structure all-Or membrane -At+ on the front and back sides of the excitation lightning pole part 150,
#2. Making it WI is intended to reduce the vibrational energy loss of the crystal resonator and improve the Ca value. In general, if the metal thin film for the excitation rod of a crystal resonator is composed of only an Au film, it can be a crystal resonator with a good Ca value, but if only an Au film is used, the adhesion to the crystal material is weak, so A Cr film with strong adhesion is used as the base film for the A'+4 film. 1. It is a well-known fact that this causes the Ca value to deteriorate. 1. Therefore, even in the tuning fork type water 29-shot camera element of the present invention shown in FIG. /Membrane 1
Although the structure with multiple layers is more effective, it has disadvantages as mentioned above, so as shown in FIG. 2, <C! rl grass 19 and 21'
? As a base vagina, Cr membrane-A? 1. The membrane has a two-layer structure. Next, FIG. 3 shows a table of the excitation electrode section according to the present invention.
裏面をＣｒ膜−Ａフ１．膜の２層化によりＣａ置の向上
を計った実験結果を示す。第３図（Ａ）は従来の４層励
振電極構造におけるＣ１値の分布、同図（］３）σ本発
明の２層励振電極構造におけるＣａ値の分布を示すもの
である。同図に示す如く、本発明によれば２割程度のＣ
ａ値の向上が図れるものである。The back side is Cr film-A film 1. The results of an experiment in which the Ca concentration was improved by making the film two-layered are shown. FIG. 3(A) shows the distribution of C1 values in the conventional four-layer excitation electrode structure, and FIG. 3(A) shows the distribution of Ca values in the two-layer excitation electrode structure of the present invention. As shown in the figure, according to the present invention, about 20% of C
It is possible to improve the a value.
又、第２図の支持部１６は断面を同図（ＤＩの２２−２
′２ 断面図に示す如く、Ｃｒ膜−Ａ導−Ｃｒ ｆｌｉ
ｔ −Ａｕ膜１７〜２２の４ｒｆ？！構造とｔｃってい
る。一般に、音叉型水晶振動子においては水晶振動子と
リード端子との結合にｐｂ −Ｓｎ、あるいけＡｌｔ−
、８７＋、等の合金ハンダが使用さねている。これらの
合金ノーングを加熱溶融し、水晶振動子の支持部とり−
ド端子との結合を図るわけであるが、萌配合金ノ・ンダ
は溶融の際表面のｋｕから順次合金を形成しながら裸部
へ侵食し結合する。この際ノ・ンダが水晶表面にまで到
達してしまうと、当然ながち前記合金ノ・ンタ゛と水晶
振動子の素材である水晶とけ結合しないので、水晶振動
子とリード端子との結合力は弱いものとなってしまう。The cross section of the support portion 16 in FIG. 2 is shown in the same figure (22-2 in DI).
'2 As shown in the cross-sectional view, Cr film-A conductor-Cr fli
4rf of t-Au films 17 to 22? ! Structure and tc. Generally, in a tuning fork type crystal resonator, the connection between the crystal resonator and the lead terminal is PB-Sn, or Alt-
, 87+, etc. are commonly used. These alloy materials are heated and melted to form the supporting part of the crystal resonator.
The purpose of this is to bond with the copper terminal, but during melting, the metal compound alloy gradually forms an alloy starting from the surface ku and erodes into the bare portions to bond. At this time, if the lead reaches the crystal surface, it will naturally not bond with the alloy contact and the crystal that is the material of the crystal resonator, so the bonding force between the crystal resonator and the lead terminal will be weak. It becomes a thing.
したがって、帥配合金ノ）ンダの侵食が水晶表面への到
達を防１トし強固な結合力を得るためには少なくとも支
持部は４層の薄膜構造とする必要がある。Therefore, in order to prevent the erosion of the composite gold powder from reaching the crystal surface and to obtain a strong bonding force, it is necessary that at least the supporting portion has a four-layer thin film structure.
次に第２図に示しだ本発明の音叉型水晶振動子の具体的
な製造方法の一例について述べる。Next, a specific example of a method for manufacturing the tuning fork type crystal resonator of the present invention shown in FIG. 2 will be described.
本発明の如くフォトエツチングの手法を用いて製造する
音叉型水晶発振片１２は、その外形形状を弗酸水溶液等
のエンチャントによるエツチングによって形成される。The tuning fork type crystal oscillator piece 12 manufactured using a photoetching method as in the present invention has its outer shape formed by etching with an enchantment such as a hydrofluoric acid aqueous solution.
その際、耐腐食金属模としてＣｒ喚、Ａｕ膜が用いら引
る。従って、エツチングによって外形成形が成された音
叉型水晶発振片１２０表裏面には、前記面４ｐ食金属膜
のＯｒ ｌｌ＊ 、 Ａ１ｂ膜が残されている。次に第
２図（Ａ）に示す支持部１６だけに前記Ｃｒ噂、Ａｕ＃
を残１７仙の部分のＯｆ−瞳。At this time, a Cr film or an Au film is used as a corrosion-resistant metal model. Therefore, on the front and back surfaces of the tuning fork type crystal oscillator piece 120 whose external shape has been formed by etching, the Orll* and A1b films of the surface 4p etched metal film remain. Next, only the support part 16 shown in FIG.
Of-pupil of the remaining 17 immortal parts.
ＡｔＬｌｌＩを除去するフォト・エツチングプロセス？
経れば、第２図■）に示すＣｒ膜１７、ＡｔＬｎｕ １
Ｂが実現し、つづいて側面１！ｗを形成中るために表
裏面へのスバ・・タリング及び前記同様のフォト争工・
ノチンクプロセスにより、第２図（Ｂ）、 （Ｃ）（Ｔ
＋ Ｏｒ ［、Ａ？７膜１９〜２２が形成されることと
なる。Photo etching process to remove AtLllI?
After that, the Cr film 17, AtLnu 1 shown in Fig. 2)
B is realized, followed by side 1! In order to form the w, the front and back sides were subjected to thinning and the same photo-cutting process as described above.
By the notinku process, Fig. 2 (B), (C) (T
+ Or [, A? Seven films 19 to 22 are formed.
以上の製造工程金縁ることにより、第２図に示す如く、
支持部１６ｎ ｃｒ ｔ［−Ａｑｔ膜−Ｃｒ膜−Ａ’ｌ
Ｚ膜の４層構造、他の励振１１Ｎ？ｉｉ部１５汲び周波
数ＩＪＪＩ整部１４はＣｒ嗅−ＡＩＬ膜の２層構造とな
るわけである。Through the above manufacturing process, as shown in Figure 2,
Support part 16n cr t[-Aqt film-Cr film-A'l
4-layer structure of Z film, other excitation 11N? The ii part 15 and the frequency IJJI adjustment part 14 have a two-layer structure of Cr-AIL membrane.
第４図σ本発明になる夕■の実施例の平面図と断面図で
ある。FIG. 4 is a plan view and a sectional view of an embodiment of the present invention.
第４図１（Ａ）において、２３Ｆｉ音叉型水晶発振片２
４け該音５？型水晶発撮片２３十に形成さｈだ金属薄膜
、２５け周波数調整部、２６は励振電極部、２７は支持
部である。夕、第４図（Ｂｌ、 （Ｃ）、 （Ｄｌは同
図（Ａ）のＸ３− Ｘ３ 、”３− ＹＳ ｌ ２３
”Ｇで切断した場合の片側の断面図であり、２８〜３３
け各切断部にｙられる金属′薄膜層で、２Ｂ、３０．３
２ ｈ Ｃｒ膜、２９．３１．３３はＡｕ膜を示すもの
である。In FIG. 4 1(A), 23Fi tuning fork type crystal oscillator piece 2
4 ke corresponding sound 5? A metal thin film is formed on the quartz crystal oscillator piece 23, 25 is a frequency adjustment section, 26 is an excitation electrode section, and 27 is a support section. In the evening, Figure 4 (Bl, (C), (Dl is X3-X3 of the same figure (A), "3-YS l 23
"This is a cross-sectional view of one side when cut at 28-33
2B, 30.3 with a thin metal film layer placed on each cut.
2h Cr film, 29.31.33 shows Au film.
第４図（Ｂ）、 （ｃ）、 （Ｄ）に示す如く、本実施
例においては、励振電椿部２６’ｊｒＣγ膜〜Ａｕ膜の
２Ｗ化とし、周波数調整部２５及び支持部２７をａｒ＠
−Ａ’ｌｊ膜−Ｃｒ膜−Ａｖ、膜の４層構造となって
いる。励振電極部２６の２層化及び支持部２７の４層化
による効果はすでに萌述の如くであるが、本実施例にお
いては、周波数調整部２５ｆ４層化し、音叉型水晶振動
子の周波数調整量の拡大を可能にしたものである。第４
図に示す如く、音叉型水晶振動子の場合、共振周波数は
その外形形状寸度で決定され、所望の共振周波数を決定
するには萌配水晶振動子の周波数調整部２５の質量の増
減によって行なわれるが、本実施例の場合は質量の除去
により周波数の微調整を行なうものであるため、周波数
調整部２５の付加質量の量により周波数の微調量は異な
ってくる。しだがって、本実施例の如く周波数調整部２
５及び支持部２７層４層化とし、励振′ｌ吟部２６ｆｒ
２ｆＷ４化にすることによね、ＣＩ値が向上し、しかも
周波数調整量の拡大も回部にするものである。As shown in FIGS. 4(B), (c), and (D), in this embodiment, the excitation electric camellia part 26'jrCγ film to Au film are made into 2W, and the frequency adjustment part 25 and the support part 27 are @
It has a four-layer structure of -A'lj film, -Cr film, and Av film. The effect of having two layers of the excitation electrode part 26 and four layers of the support part 27 has already been described, but in this embodiment, the frequency adjustment part 25f has four layers, and the amount of frequency adjustment of the tuning fork type crystal resonator is increased. This enabled the expansion of Fourth
As shown in the figure, in the case of a tuning fork type crystal resonator, the resonant frequency is determined by its external shape and dimensions, and the desired resonant frequency is determined by increasing or decreasing the mass of the frequency adjustment section 25 of the tuning fork crystal resonator. However, in this embodiment, since the frequency is finely adjusted by removing mass, the amount of frequency finely adjusted differs depending on the amount of added mass of the frequency adjustment section 25. Therefore, as in this embodiment, the frequency adjustment section 2
5 and support part 27 layers, excitation part 26fr
By changing to 2fW4, the CI value is improved and the amount of frequency adjustment can also be expanded.
なお、本発明の音叉型水晶振動子は第５図（Ａ）の屈曲
振動の基本波を用いる振動子、第５図（Ｂ）の屈曲振動
の筑１高調波と捩り斉動の基本波を結合した振動子等に
有効である。The tuning fork type crystal oscillator of the present invention is a oscillator that uses the fundamental wave of bending vibration shown in FIG. Effective for coupled oscillators, etc.
以上述べたように本発明によｈば、音叉型水晶振動子の
少なくとも支持部に１″ｔ４層からｔｃる金属薄膜が形
成されることにより、リード端子との結合は強固なもの
２なり、しかも励振電皆部にＦｉ２層からなる金属薄膜
の形５ｙによって、大幅なＯ１値の向上が図れる。夕、
支持部及び周波数調整部には４層からなる金属薄膜が形
成さｈ、しかも励振電憚部には２層からなる金属薄膜の
形成によって大幅なＣＩ値の向上とともに共振周波数の
微調整量の拡大が図れる。以上の如（、本発明の音叉型
水晶振動子は、水晶腕時計用発振源として小型でしかも
、ＣＩ値の良い水晶振動子であるので消費軍力を小さく
するとともに、小型電池による水晶腕時計の長寿命化を
容易にする効果を有する、As described above, according to the present invention, the metal thin film from the 1" layer to the t4 layer is formed on at least the support portion of the tuning fork type crystal resonator, so that the connection with the lead terminal is strong2. Moreover, the O1 value can be significantly improved by using the metal thin film type 5y consisting of Fi2 layer in the excitation current section.Evening,
A metal thin film consisting of four layers is formed in the support part and frequency adjustment part, and a metal thin film consisting of two layers is formed in the excitation electric shock part, which greatly improves the CI value and expands the amount of fine adjustment of the resonant frequency. can be achieved. As mentioned above, the tuning fork type crystal oscillator of the present invention is a small oscillation source for a quartz wristwatch, and is a crystal oscillator with a good CI value, so it reduces power consumption and has a long lifespan for a quartz wristwatch with a small battery. has the effect of facilitating
第１図は従来の音叉型水晶振動子を示す平面図、断面図
。
第２図は本発明の音叉型水晶振動子の一実施例を示し、
（Ａ）は平面図、（Ｂ）（Ｃ）（Ｄ）は断面図。
第３図は本発明の音叉型水晶振動子の実験結果を示す図
。
第４図は本発明の仙の実施例を示す（Ａ）は平面図、（
Ｂｌ （ｃ） （Ｄ）は断面図。
１２・・・・・・音叉型水晶発振片
１３ ・・・・・・金属薄膜
１４・・・・・・周波数調整部
１５・・・・・・励振電椿部
１６・・・・・・支持部
１７、１９．２１・・・・・・Ｃγ膜
１８、２０．２２ ・−・−・Ａｕ膜 ｌ：Ｊ 上牙２
図
八 Ｂ
第３図
第４図
（ハ） （Ｂ）
第５図
丁 続 を市 ｉｌ： 、ｊｊ’ （ヵ式）％式％
：
２発明の名［６、
音叉型水晶振動子
３ 補止をする者
事件との関係
出願人長野県諏訪市大和３丁目３番５号松島工業株式会
社
４代理人 傾輔役土橋克實
〒１０４ 東京都中央区京橋２丁目６番２１号５ 補正
命令のＥｌ ｆｌ
刀り削欠の迎９
手続補正書（方式）
１ 明細書１１頁下から８行目
［（Ｂ） （０）（Ｄ）は断面図。」とあるを、［（Ｂ
）（０）（Ｄ）は断面図。
第５図（Ａ） （Ｂ）は不発明の詳細な説明図。」に補
正する。
以 上
代理人 最 上 務FIG. 1 is a plan view and a sectional view showing a conventional tuning fork type crystal resonator. FIG. 2 shows an embodiment of the tuning fork type crystal resonator of the present invention,
(A) is a plan view, (B), (C), and (D) are cross-sectional views. FIG. 3 is a diagram showing experimental results of the tuning fork type crystal resonator of the present invention. FIG. 4 shows an embodiment of the present invention. (A) is a plan view, (
Bl (c) (D) is a cross-sectional view. 12... Tuning fork type crystal oscillation piece 13... Metal thin film 14... Frequency adjustment section 15... Excitation electric camellia section 16... Support Part 17, 19.21...Cγ film 18, 20.22...Au film l:J Upper fang 2
Figure 8 B Figure 3 Figure 4 (C) (B) Figure 5 Continued il: ,jj' (Formula) %Formula %: 2 Name of the invention [6. Tuning fork crystal oscillator 3 Supplement Applicant Matsushima Kogyo Co., Ltd. 3-3-5 Yamato, Suwa City, Nagano Prefecture 4 Agent Katsumi Dobashi 2-6-21-5 Kyobashi, Chuo-ku, Tokyo 104 Order for amendment El fl Sword Cutout 9 Procedural Amendment (Method) 1 8th line from the bottom of page 11 of the specification [(B) (0) (D) is a cross-sectional view. ”, [(B
)(0)(D) is a cross-sectional view. FIGS. 5(A) and 5(B) are detailed explanatory diagrams of the non-invention. ”. Representative above
Claims (1)
励振電柱部及びリード端子が固着する支持部を有する音
叉型水晶振動子において、少なくとも該支持部には４層
かちなる金属薄膜が形成され、その金属薄膜を介して該
支持部とり−ド端子とが固着さねていることを特徴とす
る音叉型水晶振動子。 ２）周波数調整部及び励振電極部には少なくとも２層か
らなる金属薄膜が形成さ′れていることを特徴とする請
求範囲第１項記載の音叉型水晶振動子。 ３）励振電極部には少ｊｌ （とも２層がちなる金属薄
膜が形成きれていることを特徴とする請求範囲第１項記
載の音叉型水晶振動子、[Claims] 1) a frequency adjustment section formed by photo-etching;
In a tuning fork type crystal resonator having a support part to which an excitation pole part and a lead terminal are fixed, a metal thin film consisting of four layers is formed on at least the support part, and the support part and the lead terminal are connected to each other through the metal thin film. A tuning fork-type crystal resonator characterized by a fixed dovetail. 2) The tuning fork type crystal resonator according to claim 1, wherein a metal thin film consisting of at least two layers is formed on the frequency adjustment section and the excitation electrode section. 3) A tuning fork type crystal resonator according to claim 1, characterized in that a metal thin film having two layers is completely formed in the excitation electrode part;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP900684A JPS60153212A (en) | 1984-01-20 | 1984-01-20 | Tuning fork type crystal resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP900684A JPS60153212A (en) | 1984-01-20 | 1984-01-20 | Tuning fork type crystal resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60153212A true JPS60153212A (en) | 1985-08-12 |
Family
ID=11708566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP900684A Pending JPS60153212A (en) | 1984-01-20 | 1984-01-20 | Tuning fork type crystal resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60153212A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096899A (en) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | Manufacturing method and bonding structure of piezoelectric vibration piece, and piezoelectric device |
| JP2008098909A (en) * | 2006-10-11 | 2008-04-24 | Epson Toyocom Corp | Piezoelectric vibration piece and piezoelectric device |
| JP2012054893A (en) * | 2010-09-03 | 2012-03-15 | Nippon Dempa Kogyo Co Ltd | Tuning fork type crystal vibrating piece and crystal device |
-
1984
- 1984-01-20 JP JP900684A patent/JPS60153212A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096899A (en) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | Manufacturing method and bonding structure of piezoelectric vibration piece, and piezoelectric device |
| JP2008098909A (en) * | 2006-10-11 | 2008-04-24 | Epson Toyocom Corp | Piezoelectric vibration piece and piezoelectric device |
| JP2012054893A (en) * | 2010-09-03 | 2012-03-15 | Nippon Dempa Kogyo Co Ltd | Tuning fork type crystal vibrating piece and crystal device |
| CN102386872A (en) * | 2010-09-03 | 2012-03-21 | 日本电波工业株式会社 | Tuning-fork type quartz-crystal vibrating pieces and quartz-crystal devices |
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