JPS60141862A - Manufacture of electrically conductive transparent film - Google Patents
Manufacture of electrically conductive transparent filmInfo
- Publication number
- JPS60141862A JPS60141862A JP58248444A JP24844483A JPS60141862A JP S60141862 A JPS60141862 A JP S60141862A JP 58248444 A JP58248444 A JP 58248444A JP 24844483 A JP24844483 A JP 24844483A JP S60141862 A JPS60141862 A JP S60141862A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrically conductive
- electrode
- conductive transparent
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は透明導電膜の形成方法、詳しくは低温と高温で
の熱処理を行うことにより電気特性に優れた透明導電膜
を製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for forming a transparent conductive film, and more particularly to a method for manufacturing a transparent conductive film with excellent electrical properties by performing heat treatment at low and high temperatures.
（２）技術の背景
アモルファス・シリコンを感光素子とする第１図に断面
図で示すフメトダイオードが知られており、同図におい
て、１はガラス基板、２ば透明電極、３は二酸化シリコ
ン膜（５ｉ０２膜）、４はアモルファス・シリコン（ａ
−３ｔ）膜、５は例えばア（１）
ルミニウム（Ａβ）で作った上部電極で、かかるデバイ
スにより図に見て透明電極２の下方から入る光ｈνに対
応する電気信号が得られる。透明電極２はＩｎ２Ｏ３，
５ｎＯｚまたはインジウム・錫オキサイド（ＴＴＯ）の
如き金属で作られ電極として働く一方、それは例えば５
００人というようにきわめて薄いもので、光を透過させ
る、すなわち光に透明であるので透明電極と呼ばれる。(2) Background of the technology A fumetode, which uses amorphous silicon as a photosensitive element and is shown in cross section in Figure 1, is known. In the figure, 1 is a glass substrate, 2 is a transparent electrode, and 3 is a silicon dioxide film. (5i02 film), 4 is amorphous silicon (a
-3t) film, 5 is an upper electrode made of aluminum (Aβ), for example, and with this device an electrical signal corresponding to light hv entering from below the transparent electrode 2 can be obtained as seen in the figure. The transparent electrode 2 is made of In2O3,
While it is made of a metal such as 5nOz or indium-tin oxide (TTO) and acts as an electrode, it is
It is called a transparent electrode because it is extremely thin, about 0.00 mm thick, and transmits light, that is, it is transparent to light.
それは透明導電膜をパターニングすることによって作ら
れる。It is made by patterning a transparent conductive film.
（３）従来技術と問題点
従来のイメージセンサ−に用いられる透明導電膜の製造
法としては、透明導電物質をガラス基板上に蒸着した後
、空気中で２００°Ｃの熱処理をすることで酸素原子の
不足分の補充を行っていた。ところが、このままでは膜
中の粒径が小さく、比抵抗も大きいため、より高温例え
ば４００°Ｃで熱処理を行う必要があるが、そうすると
分子構造が変化してしまい、透明度の低下や電気導電率
の低下が生じていた。(3) Conventional technology and problems The manufacturing method for transparent conductive films used in conventional image sensors involves vapor-depositing a transparent conductive material on a glass substrate and then heat-treating it at 200°C in air to remove oxygen. They were replenishing the lack of atoms. However, as the particle size in the film is small and the resistivity is high, it is necessary to heat treat it at a higher temperature, e.g. 400°C, but this changes the molecular structure, resulting in a decrease in transparency and electrical conductivity. There was a decline.
（４）発明の目的
（２）
本発明は」７記従来の問題に鑑み、イメージセンサ−の
透明電極を作る透明導電膜の電気特性を向」二せしめる
方法を提供することを目的とする。(4) Object of the Invention (2) In view of the conventional problems described in item 7, an object of the present invention is to provide a method for improving the electrical characteristics of a transparent conductive film that forms a transparent electrode of an image sensor.
（５）発明の構成
そしてこの目的は本発明によれば、透明導電物質を蒸着
等により薄膜化しそれに２００℃以下の酸素を含む雰囲
気中で熱処理を行い、続いて表面を保護膜で覆った後４
００°Ｃ以上の高温熱処理を行うことを特徴とする透明
導電膜の製造方法を提供することによって達成される。(5) Structure and object of the invention According to the present invention, a transparent conductive material is made into a thin film by vapor deposition, heat treated in an atmosphere containing oxygen at 200°C or less, and then the surface is covered with a protective film. 4
This is achieved by providing a method for manufacturing a transparent conductive film, which is characterized by performing a high-temperature heat treatment at 00°C or higher.
（６）発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.
本発明は、透明導電膜の組成を変化させることにより粒
径を大にし、それによって透明導電膜の電気特性を向上
させるものである。The present invention increases the particle size by changing the composition of the transparent conductive film, thereby improving the electrical properties of the transparent conductive film.
本発明の基本原理を第２図の断面図を参照して説明する
と（第２図と次の第３図において、第１図に示した部分
と同じ部分は同一符号を付して表示する）、透明導電膜
２ａをガラス基板１上に蒸着した後に空気中で２００°
Ｃの熱処理をする。この操（３）
作により蒸着で不足している酸素成分が補充され−る。The basic principle of the present invention will be explained with reference to the cross-sectional view in Fig. 2 (in Fig. 2 and the following Fig. 3, the same parts as shown in Fig. 1 are indicated with the same reference numerals). , after depositing the transparent conductive film 2a on the glass substrate 1, it was heated at 200° in air.
Perform C heat treatment. This operation (3) replenishes the oxygen component that is deficient in vapor deposition.
次に５ｉ０２膜３で透明導電膜２ａの表面をコート（被
覆）する。その後４００℃で熱処理をすることで透明導
電膜２ａ中の粒径を大きくし膜質を均一化させる。この
処理により、透明導電膜２ａの組成を変えずに（すなわ
ち透明度が低下することなく）比抵抗を下げることがで
きることが確認された。Next, the surface of the transparent conductive film 2a is coated with a 5i02 film 3. Thereafter, heat treatment is performed at 400° C. to increase the particle size in the transparent conductive film 2a and make the film quality uniform. It was confirmed that by this treatment, the specific resistance could be lowered without changing the composition of the transparent conductive film 2a (that is, without reducing the transparency).
第３図に本発明をイメージセンサーの製造プロセスへ適
用する例を示す。FIG. 3 shows an example in which the present invention is applied to an image sensor manufacturing process.
先ず、第３図＋ａｌに示される如く、ガラス基板１の表
面に透明導電膜としてＩＴＯ膜２ａを蒸着し、２００℃
の空気中で熱処理を行う。続いてフォトレジストを用い
るリソグラフィーでダイオード電極バターニングを行い
透明電極２を作る。First, as shown in FIG. 3+al, an ITO film 2a is deposited on the surface of a glass substrate 1 as a transparent conductive film,
Heat treatment is performed in air. Subsequently, diode electrode patterning is performed by lithography using a photoresist to form a transparent electrode 2.
次に第３図ｆｂｌに示される如く、ＳｉＯ２膜３を０．
５〜１．０μｍの膜厚にコートし、４ｏｏ′ｃの熱処理
を行う。次いで同図（Ｃ）に示される如く、 ５ｉ０２
膜３にフォトリソグラフィ一工程で窓開けを行い窓６を
作る。最後にａ−５ｉ膜４を堆積して窓６を埋め、それ
をパターニングし、次に八βを堆積しパ（４）
ターニングを行って上部電極５を作り第１図に示される
フォトダイオードを形成する。Next, as shown in FIG.
It is coated to a film thickness of 5 to 1.0 μm and heat treated for 400°C. Then, as shown in the same figure (C), 5i02
A window 6 is formed by opening a window in the film 3 in one photolithography process. Finally, an a-5i film 4 is deposited to fill the window 6 and patterned, and then an 8β film is deposited and patterned (4) to form the upper electrode 5 and form the photodiode shown in FIG. Form.
上記の工程で作られた５ｉ０２膜３は層間絶縁膜をＡ１
トねており、プロセスの追加をすることなく、ＩＴＯ膜
の抵抗値が低下し、ダイオードの電気特性が向上する効
果がある。The 5i02 film 3 made in the above process has an interlayer insulating film A1
This has the effect of reducing the resistance value of the ITO film and improving the electrical characteristics of the diode without adding any additional processes.
（７）発明の効果
以上詳細に説明した如く本発明によれば、ＩＴＯの如き
透明導電膜の最初は２００℃以下の、次いで４００℃程
度の高温熱処理により透明導電膜の変質を防ぐことがで
きるので、粒径を均一化し、電気特性を向上させる効果
がある。(7) Effects of the Invention As explained in detail above, according to the present invention, deterioration of the transparent conductive film such as ITO can be prevented by heat treatment at a high temperature of 200°C or less and then at about 400°C. Therefore, it has the effect of making the particle size uniform and improving electrical properties.
第１図はフォトダイオードの断面図、第２図は本発明の
原理を示す断面図、第３図は本発明の原理を適用例を示
す断面図である。
１−ガラス基板、２・−透明電極、
２ａ−透明導電膜、３−５ｉＯｚ膜、
４−ａ−３ｔ膜、５−上部電極
（５）FIG. 1 is a sectional view of a photodiode, FIG. 2 is a sectional view showing the principle of the present invention, and FIG. 3 is a sectional view showing an example of application of the principle of the present invention. 1-Glass substrate, 2-Transparent electrode, 2a-Transparent conductive film, 3-5iOz film, 4-a-3t film, 5-Upper electrode (5)
Claims (1)
Ｃ以下の酸素を含む雰囲気中で熱処理を行い、続いて表
面を保護膜で覆った後４００°Ｃ以上の高温ｐ）処理を
行うことを特徴とする透明導電膜の製造方法。A transparent conductive material is made into a thin film by # coating, etc., and then 200'
1. A method for producing a transparent conductive film, which comprises performing heat treatment in an atmosphere containing oxygen at a temperature of 400° C. or lower, followed by covering the surface with a protective film and then performing p) treatment at a high temperature of 400° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58248444A JPS60141862A (en) | 1983-12-29 | 1983-12-29 | Manufacture of electrically conductive transparent film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58248444A JPS60141862A (en) | 1983-12-29 | 1983-12-29 | Manufacture of electrically conductive transparent film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60141862A true JPS60141862A (en) | 1985-07-26 |
Family
ID=17178215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58248444A Pending JPS60141862A (en) | 1983-12-29 | 1983-12-29 | Manufacture of electrically conductive transparent film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60141862A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0217095A2 (en) * | 1985-09-03 | 1987-04-08 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
-
1983
- 1983-12-29 JP JP58248444A patent/JPS60141862A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0217095A2 (en) * | 1985-09-03 | 1987-04-08 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
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