JPS60139326U - High frequency signal amplification circuit - Google Patents

High frequency signal amplification circuit

Info

Publication number
JPS60139326U
JPS60139326U JP2774584U JP2774584U JPS60139326U JP S60139326 U JPS60139326 U JP S60139326U JP 2774584 U JP2774584 U JP 2774584U JP 2774584 U JP2774584 U JP 2774584U JP S60139326 U JPS60139326 U JP S60139326U
Authority
JP
Japan
Prior art keywords
frequency signal
variable impedance
high frequency
signal amplification
impedance element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2774584U
Other languages
Japanese (ja)
Inventor
淳 小野
彰 佐藤
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP2774584U priority Critical patent/JPS60139326U/en
Publication of JPS60139326U publication Critical patent/JPS60139326U/en
Pending legal-status Critical Current

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  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の高周波信号増幅回路の一例番示す接続図
、第２図はこの考案に係る高周波信号増　　　　−幅回
路の一例を示す接続図である。 １は４極電界トランジスタ、Ｑｌｔ　Ｑ２は第１及び第
２の可変インピーダンス素子、Ｒ□、Ｒ３゜Ｒ５，Ｒ６
はバイアス用抵抗器、ＶＡＣｊＣはＡＧＣ電圧である。FIG. 1 is a connection diagram showing an example of a conventional high frequency signal amplification circuit, and FIG. 2 is a connection diagram showing an example of a high frequency signal amplification circuit according to this invention. 1 is a quadrupole field transistor, Qlt Q2 is the first and second variable impedance element, R□, R3° R5, R6
is a bias resistor, and VACjC is an AGC voltage.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 高周波信号増幅用の４極電界効果トランジスタを有し、
その第１ゲートに入力高周波信号と一対の抵抗器を介し
て所定のＤＣバイアスが供給され、上記トランジスタの
第２のゲートに供給されるＡＧＣ信号にてそのドレイン
より得られる出力高周波信号のゲイ７ンがコントロール
されると共に、上記トランジスタのソース側には第１の
可変゛　　インピーダンス素子が接続され、この第１の
可変インピーダンス素子と上記抵抗器の接続中点との間
には第２の可変インピーダンス素子が接続され、この第
２の可変インピーダン反素子に供給される上記ＡＧＣ信
号によってこれら第１及び第２の可変インピーダンス素
子のインピーダンスがコツトロールされるようになされ
た高周波信号増幅回路。It has a quadrupole field effect transistor for high frequency signal amplification,
An input high-frequency signal and a predetermined DC bias are supplied to the first gate of the transistor via a pair of resistors, and an output high-frequency signal obtained from the drain thereof is given a gain of 7 by the AGC signal supplied to the second gate of the transistor. A first variable impedance element is connected to the source side of the transistor, and a second variable impedance element is connected between the first variable impedance element and the connection midpoint of the resistor. A high frequency signal amplification circuit in which the impedances of the first and second variable impedance elements are controlled by the AGC signal supplied to the second variable impedance element.
JP2774584U 1984-02-28 1984-02-28 High frequency signal amplification circuit Pending JPS60139326U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2774584U JPS60139326U (en) 1984-02-28 1984-02-28 High frequency signal amplification circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2774584U JPS60139326U (en) 1984-02-28 1984-02-28 High frequency signal amplification circuit

Publications (1)

Publication Number Publication Date
JPS60139326U true JPS60139326U (en) 1985-09-14

Family

ID=30524978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2774584U Pending JPS60139326U (en) 1984-02-28 1984-02-28 High frequency signal amplification circuit

Country Status (1)

Country Link
JP (1) JPS60139326U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01208908A (en) * 1988-02-16 1989-08-22 A T R Koudenpa Tsushin Kenkyusho:Kk Variable attenuation device
JPH03262308A (en) * 1990-03-13 1991-11-22 Toshiba Corp Dual gate field effect transistor amplifier circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01208908A (en) * 1988-02-16 1989-08-22 A T R Koudenpa Tsushin Kenkyusho:Kk Variable attenuation device
JPH03262308A (en) * 1990-03-13 1991-11-22 Toshiba Corp Dual gate field effect transistor amplifier circuit

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