JPS60136235A - Electron beam tester - Google Patents
Electron beam testerInfo
- Publication number
- JPS60136235A JPS60136235A JP58243316A JP24331683A JPS60136235A JP S60136235 A JPS60136235 A JP S60136235A JP 58243316 A JP58243316 A JP 58243316A JP 24331683 A JP24331683 A JP 24331683A JP S60136235 A JPS60136235 A JP S60136235A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- electron
- electrodes
- projected
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は走査型電子顕微鏡（以下８ＢＭと略すを用いた
′電子ビームテスタに関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to an electron beam tester using a scanning electron microscope (hereinafter abbreviated as 8BM).
（従来技術）
最近のマイクロエレクトロニクスの進歩に伴い、電子素
子は微細化を極め、もはやマニュアルプローパ等の探針
を用いた接触型σ解析機器では、電子素子の必要カ所に
探針をあてることが不可能になシつつある。一方、この
様な状況を打開すべく、電子プロービング技術が発達し
、ＳＥＭを用いた非接触型の電位検出器が開発され、実
用化を輸亭極めた。その原理は電位差による二次電子蔓
の放出効率の違いを利用したものである。しかし、実際
上、評価されるデバイスに外部より電位を与え、動作さ
せる為には、被測定素子を容器に収容し、試料室内に用
意されたＩＣソケット等を通して動作させている。しか
し、実際には、ウエノ・・一段階でのプロービング、特
定領域への信号印加等、従来のマニュアルプローバで用
いられた手法をそのまま電子プロービングでも用いたい
と考えるのは当然である。このような要求には、非接触
型のバイアス印加方法が発見されない限シ答える事がで
きない。(Prior art) With recent advances in microelectronics, electronic devices have become extremely fine, and contact-type σ analysis instruments that use probes such as manual proppers no longer allow the probe to be applied to the required location on the electronic device. is becoming impossible. On the other hand, in order to overcome this situation, electronic probing technology has been developed, and a non-contact potential detector using SEM has been developed, and its practical application has reached its peak. The principle is to utilize the difference in emission efficiency of secondary electrons due to potential difference. However, in practice, in order to apply a potential to the device to be evaluated from the outside and operate it, the device to be measured is housed in a container and operated through an IC socket or the like prepared in a sample chamber. However, in reality, it is natural to want to use the techniques used in conventional manual probers, such as one-step probing and signal application to a specific area, for electronic probing. Such demands cannot be met unless a non-contact bias application method is discovered.
（発明の目的）
そこで、本発明の目的は非接触で電子素子の特定領域あ
るいはウェハーの特定の領、域にバイアスを印加する方
法を提供するものである。(Object of the Invention) Therefore, an object of the present invention is to provide a method of applying a bias to a specific region of an electronic device or a specific region of a wafer in a non-contact manner.
（発明の構成）
すなわち本発明によれば、非接触バイアス源として、グ
ローブビームとは別の電子ビーム（以下ソースビームと
呼ぶ）を用い、電子ビームをあてることによって特定領
域にバイアスを印加する電子顕微鏡を用いた電子ビーム
テスタを得る。(Structure of the Invention) That is, according to the present invention, an electron beam (hereinafter referred to as a source beam) different from a globe beam is used as a non-contact bias source, and an electron beam is applied to apply a bias to a specific region by applying the electron beam. Obtain an electron beam tester using a microscope.
（発明の実施例） 次に本発明を図面を用いて、よシ詳細に説明する。(Example of the invention) Next, the present invention will be explained in detail using the drawings.
第１図は本発明の原理を示したもので、１はソースビー
ム用電子旅であシ、試料中の負電位を与えたい箇所に常
時あるいはパルス状に照射される。FIG. 1 shows the principle of the present invention. Reference numeral 1 indicates an electron beam for a source beam, which is irradiated constantly or in a pulsed manner to a location in a sample where a negative potential is desired to be applied.
２は被バイアス領域であυ、この例では金属電極となっ
ている。３は金属電極２とオーミックコンタクトされた
半導体領域であシ、この領域が特定負電位にバイアスさ
れる。2 is a biased region υ, which in this example is a metal electrode. A semiconductor region 3 is in ohmic contact with the metal electrode 2, and this region is biased to a specific negative potential.
ソースビーム１から照射された電子１０は、金属電極２
にその一部が吸収され、オーミックコンタクトを通して
、領域Ｃに注入される。電子を注入された領域３では、
電子注入の為、外領域４に対して負電位をもつ事になる
。The electrons 10 irradiated from the source beam 1 are transferred to the metal electrode 2
A part of it is absorbed and implanted into region C through the ohmic contact. In region 3 where electrons were injected,
Because of electron injection, it has a negative potential with respect to the outer region 4.
印加する事ができる。注入電流量の制御は、ソースビー
ム出力全可変にする事、ソースビームをパルス状にする
事、等で制御可能であり、注入効率は、電子ビームのカ
ロ速電圧等で制御可能である。can be applied. The amount of injection current can be controlled by making the source beam output fully variable, making the source beam pulsed, etc., and the injection efficiency can be controlled by adjusting the Calospeed voltage of the electron beam, etc.
次に、実際上の電子ビームテスタとして使用した場合の
実用例を第２図に示す。ソースビーム１１から照射され
た電子ビーム１０は、偏向装置１３によシ、ハルス状ビ
ームとなって、電極１５と１６に照射される。この時電
子ビームの照射時間比率を電極１５と１６に対し、それ
ぞれｍ：ｎにする事によシ、負電位差ｍｚｎを得る事が
できる。電極１５はＮＰＮ ）ランジスタのエミッタに
、電極１６はベースに接続されている。Next, a practical example of use as an actual electron beam tester is shown in FIG. The electron beam 10 irradiated from the source beam 11 is converted into a Halus-like beam by the deflection device 13 and irradiated onto the electrodes 15 and 16. At this time, by setting the electron beam irradiation time ratio to m:n for the electrodes 15 and 16, respectively, a negative potential difference mzn can be obtained. Electrode 15 is connected to the emitter of the NPN transistor, and electrode 16 is connected to the base.
一方、グローブビーム１２から照射された電子ビーム１
０は偏向装置１４によシ試料玉を走査し、その走査周波
数と同期して二次電子２Ｏを検出器１７で検出し、ブラ
ウン管１８に描く。これは、従来のＳＥＭと同等の画像
処理方法である。但し、ソースビーム照射点くｔ極１５
，１６）よりｍａｎの時間比率で二次電子２０が放出さ
れている為、この影響を除くべくフィルター１９が挿入
されている。On the other hand, the electron beam 1 irradiated from the globe beam 12
0, the sample ball is scanned by the deflection device 14, and secondary electrons 2O are detected by the detector 17 in synchronization with the scanning frequency and drawn on the cathode ray tube 18. This is an image processing method equivalent to conventional SEM. However, the source beam irradiation point t pole 15
, 16), the secondary electrons 20 are emitted at a time ratio of man, so a filter 19 is inserted to remove this influence.
ＮＰＮ ）ランジスタのコレクタ領域２１の電位コント
ラストを観察しながら、ソースビームのペース領域に対
する照射比率を制御し、ＮＰＮ）ランジスタのターンオ
ン電位を検出する竿ができる。While observing the potential contrast of the collector region 21 of the NPN) transistor, the irradiation ratio of the source beam to the pace region is controlled, thereby creating a rod for detecting the turn-on potential of the NPN) transistor.
ソースビームは複数本使用する事も可能であシ、またソ
ースビームの強麓すなわち電流量を変調する事により、
クロック入力、交流入力等を作り出す事も可能である。It is also possible to use multiple source beams, and by modulating the strength of the source beam, that is, the amount of current,
It is also possible to create clock inputs, AC inputs, etc.
以上の様に１′＋Ｌ子ビームをソースビームとして用い
て、非接触で試料に負電位を印加する事は、ウェハーＩ
状態、または特定領域の動作解析を可能とする画期的な
手法である。As described above, using the 1'+L beam as a source beam and applying a negative potential to the sample without contacting the wafer I
This is an innovative method that enables analysis of the state or movement of a specific area.
第４図は本発明の原理を示す図である。
１・・・・・・ソースビーム用電子銃、２・・・・・・
金属電極、３・・・・・・半導体領域、４・・・・・・
外部半導体領域、１０・・・・・・電子。
嬉２図は本発明の一実施例の要部を示す図である。
１１・・・・・・ソースビーム用電子銃、１２・・・・
・・グローブビーム用電子銃、１３・・・・・・ソース
ビーム偏向器、１４・・・・・・プローブビーム偏向器
、１５．１６・・・・・・電子素子の電極、１７・・・
・・・二次電子検出器、１８・・・・・・二次電子像表
示用ＣＲＴ、１９・・・・・・ソースビームよりの二次
′電子信号除去用フィルター、２１・・・・・・電子素
子のコレクタ領域、１０・・・・・・電子、２０・・・
・・・二次電子。FIG. 4 is a diagram showing the principle of the present invention. 1... Source beam electron gun, 2...
Metal electrode, 3... Semiconductor region, 4...
External semiconductor region, 10...electrons. Figure 2 is a diagram showing essential parts of an embodiment of the present invention. 11... Source beam electron gun, 12...
... Globe beam electron gun, 13... Source beam deflector, 14... Probe beam deflector, 15.16... Electrode of electronic element, 17...
...Secondary electron detector, 18...CRT for secondary electron image display, 19...Filter for removing secondary 'electron signal from source beam, 21...・Collector region of electronic element, 10...electron, 20...
...Secondary electrons.
Claims (1)
走査画像を得る為のプローブビーム以外に、試料に特定
バイアスを印加する為のソースビームを複数本搭載し試
料に非接触で電位を与える事を可能にしたことを特徴と
する電子ビームテスタ。In an electron beam tester using a scanning electron microscope,
An electron beam tester characterized by being equipped with a plurality of source beams for applying a specific bias to a sample in addition to a probe beam for obtaining a scanning image, making it possible to apply a potential to the sample without contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58243316A JPS60136235A (en) | 1983-12-23 | 1983-12-23 | Electron beam tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58243316A JPS60136235A (en) | 1983-12-23 | 1983-12-23 | Electron beam tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60136235A true JPS60136235A (en) | 1985-07-19 |
Family
ID=17102019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58243316A Pending JPS60136235A (en) | 1983-12-23 | 1983-12-23 | Electron beam tester |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136235A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254742A (en) * | 1987-03-18 | 1988-10-21 | アルカテル・エヌ・ブイ | Integrated circuit and method and apparatus for testing it |
| EP0892275A2 (en) * | 1997-07-15 | 1999-01-20 | Schlumberger Technologies, Inc. | Method and apparatus for testing semiconductor and integrated circuit structures |
| US7528614B2 (en) | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57196539A (en) * | 1981-05-26 | 1982-12-02 | Ibm | Test device for electric characteristics |
-
1983
- 1983-12-23 JP JP58243316A patent/JPS60136235A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57196539A (en) * | 1981-05-26 | 1982-12-02 | Ibm | Test device for electric characteristics |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254742A (en) * | 1987-03-18 | 1988-10-21 | アルカテル・エヌ・ブイ | Integrated circuit and method and apparatus for testing it |
| EP0892275A2 (en) * | 1997-07-15 | 1999-01-20 | Schlumberger Technologies, Inc. | Method and apparatus for testing semiconductor and integrated circuit structures |
| EP0892275A3 (en) * | 1997-07-15 | 1999-07-28 | Schlumberger Technologies, Inc. | Method and apparatus for testing semiconductor and integrated circuit structures |
| US6504393B1 (en) | 1997-07-15 | 2003-01-07 | Applied Materials, Inc. | Methods and apparatus for testing semiconductor and integrated circuit structures |
| US7528614B2 (en) | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
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