JPH0329867A - Observation of voltage distribution image by electron beam apparatus - Google Patents
Observation of voltage distribution image by electron beam apparatusInfo
- Publication number
- JPH0329867A JPH0329867A JP1166178A JP16617889A JPH0329867A JP H0329867 A JPH0329867 A JP H0329867A JP 1166178 A JP1166178 A JP 1166178A JP 16617889 A JP16617889 A JP 16617889A JP H0329867 A JPH0329867 A JP H0329867A
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- detector
- voltage distribution
- memory
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 35
- 238000009826 distribution Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000003334 potential effect Effects 0.000 abstract 1
- 238000005070 sampling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
Description
【発明の詳細な説明】
〔発明の概要〕
電子ビーム装置によるＬＳＩチップなどの試料の電位分
布像の観測法に関し、
検出された二次電子信号を補正して、同し電圧の試料面
から出た二次電子信号は可及的に同しになるようにし、
忠実度の高い電圧分布像を提供できるようにすることを
目的とし、
試料面を電子ビームで走査し、該走査で放出される二次
電子を検出器で捕集し、該検出器出力により試料面の電
圧分布像を観測する方法において、格子状の静電潜像パ
ターンを持つ補正用試料を用い、該試料を観測対象試料
に置き換えて電子ビームで走査し、得られた二次電子検
出器出力をメモリに記憶させ、然るのち、観測対象の試
料の面を電子ビームで走査し、得られた二次電子検出器
出力を、前記メモリの読出し出力で割算して、その結果
を電圧分布像観測に用いるよう構戒する。[Detailed Description of the Invention] [Summary of the Invention] Regarding a method for observing potential distribution images of a sample such as an LSI chip using an electron beam device, the detected secondary electron signal is corrected and emitted from the sample surface at the same voltage. The secondary electron signals are made to be as similar as possible,
The aim is to provide a voltage distribution image with high fidelity.The sample surface is scanned with an electron beam, the secondary electrons emitted during the scanning are collected by a detector, and the output of the detector is used to detect the sample. In a method of observing a voltage distribution image on a surface, a correction sample having a grid-like electrostatic latent image pattern is used, the sample is replaced with the observation target sample, and the resulting secondary electron detector is scanned with an electron beam. The output is stored in a memory, and then the surface of the sample to be observed is scanned with an electron beam, the obtained secondary electron detector output is divided by the readout output of the memory, and the result is calculated as a voltage. It is planned to be used for distribution image observation.
本発明は、電子ビーム装置によるＬＳＩチップなどの試
料の電圧分布像の観測法に関する。The present invention relates to a method of observing a voltage distribution image of a sample such as an LSI chip using an electron beam device.
走査型電子顕微鏡（ＳＥＭ）によって試料の電圧分布を
観測する技術が従来から知られている。2. Description of the Related Art Techniques for observing the voltage distribution of a sample using a scanning electron microscope (SEM) have been known.
この技術はＬＳＩの動作状態を観測するために配線の電
圧分布像を得るためや、静電潜像の観察などに利用され
ている。前者はたとえば古川，稲垣：ｌＳＩの非接触診
断技術」電気学会論文誌Ｃ，１０７巻．３号，２４５Ｊ
に、後者はたとえば面谷，田中，星野： 「コロナイオ
ン照射により作威した表面電荷のＳＥＭ観察」静電気学
会講演論文集’８６． １ ７ ９ Ｊに詳しい。This technique is used to obtain voltage distribution images of wiring to observe the operating state of LSIs, and to observe electrostatic latent images. The former is, for example, Furukawa, Inagaki: "Non-contact diagnostic technology for ISI", Transactions of the Institute of Electrical Engineers of Japan, Vol. 107. No. 3, 245J
The latter is, for example, Omotani, Tanaka, and Hoshino: "SEM Observation of Surface Charges Created by Corona Ion Irradiation," Proceedings of the Electrostatic Society of Japan '86. 1 7 9 I am familiar with J.
〔従来の技術］
表面の電圧分布像を得る方法としては、先端が微小な金
属針を表面に接触させて電圧を測定する方法があるが、
微細化ＬＳＩでこれを行なうと、金属針を内部電極配線
へ接触させにくい、ＬＳＩを損傷する恐れがある、容量
を持つから高速の信号は測定しにくい等の問題がある。[Prior Art] As a method of obtaining a voltage distribution image on a surface, there is a method in which a metal needle with a minute tip is brought into contact with the surface and the voltage is measured.
If this is done with a miniaturized LSI, there are problems such as it is difficult to bring the metal needle into contact with the internal electrode wiring, there is a risk of damaging the LSI, and it is difficult to measure high-speed signals because of the capacitance.
電子ビームによる観測は、動作状態のＬＳＩチップ（試
料）表面を電子ビームで走査し、このとき発生する二次
電子を二次電子検出器に導き、検出器出力でＣＲＴディ
スプレイを輝度変調し、管面に試料面の電位分布像を表
示する、などの方法で行なう。Observation using an electron beam involves scanning the surface of an LSI chip (sample) in an operating state with an electron beam, guiding the secondary electrons generated at this time to a secondary electron detector, and using the output of the detector to modulate the brightness of a CRT display. This can be done by displaying an image of the potential distribution on the sample surface on the surface.
試料面への電子ビーム照射で二次電子が放出され、二次
電子検出器により検出される二次電子の量は、当該試料
面の電位および試料面上に形威される電界分布の影響を
受ける。一般に電位の低い部分は放出される二次電子が
多く、ディスプレイ上の電圧分布像の当該部分は明るく
見える。逆に、電位の高い部分は放出される二次電子が
少なく、電位分布像の当該部分は暗くなる。この明暗が
試料面の電位分布を示す。電子ビームによれば、高速に
高い分解能で電圧分布を得ることができるので、非常に
有効である。Secondary electrons are emitted when the sample surface is irradiated with an electron beam, and the amount of secondary electrons detected by the secondary electron detector is influenced by the potential of the sample surface and the electric field distribution formed on the sample surface. receive. Generally, a portion with a low potential has a large number of emitted secondary electrons, and this portion of the voltage distribution image on the display appears bright. Conversely, in a high-potential area, fewer secondary electrons are emitted, and the potential distribution image becomes dark. This brightness indicates the potential distribution on the sample surface. Electron beams are very effective because voltage distributions can be obtained quickly and with high resolution.
しかし、電圧分布を忠実に反映した二次電子信号を得る
ことは一般に容易でない。第４図に示すように、同じ電
圧の配線でも、二次電子信号のレベルが異なるのが一般
的である。この図で１０は二次電子ＳＥの検出器、１２
は増幅器、ｌ４は電子ビームＥＢの偏向器、２０は試料
（ＬＳＩチップ）、■■・・・・・・■は該試料に形威
された配線で、電源２２により同じ一定の電圧を与えら
れている。However, it is generally not easy to obtain a secondary electron signal that faithfully reflects the voltage distribution. As shown in FIG. 4, even if the wiring has the same voltage, the level of the secondary electron signal generally differs. In this figure, 10 is a secondary electron SE detector, 12
is an amplifier, l4 is a deflector for the electron beam EB, 20 is a sample (LSI chip), and ■■...■ is a wiring formed on the sample, which is supplied with the same constant voltage by a power source 22. ing.
同じ電圧の配線でも、その二次電子信号は第４図（ｂ）
の如くレベルが異なるのは、二次電子の軌道が種々の電
界の影響を受けるため、検出される二次電子の量が配線
の位置などによって異なってしまうからである。Even if the wiring has the same voltage, the secondary electron signal is as shown in Figure 4 (b)
The reason why the levels differ is that the trajectory of secondary electrons is affected by various electric fields, and the amount of detected secondary electrons varies depending on the position of the wiring.
本発明はか＼る点に着目するもので、検出された二次電
子信号を補正して、同じ電位の試料面から出た二次電子
信号は可及的に同じになるようにし、忠実度の高い電圧
分布像を提供できるようにすることを目的とするもので
ある。The present invention focuses on this point, and corrects the detected secondary electron signals so that the secondary electron signals emitted from the sample surface of the same potential are as similar as possible, thereby improving the fidelity. The purpose of this is to provide a high voltage distribution image.
第１図に示すように本発明では、格子状の静電潜像パタ
ーンを持つ補正用試料３０を用意する。As shown in FIG. 1, in the present invention, a correction sample 30 having a grid-like electrostatic latent image pattern is prepared.
第１図（ａ）で斜線部は例えば高電位部分、自部分はそ
の逆の低電位部分である。このような静電潜像パターン
は第１図（ｂ）に示すように、複写機などで使用される
導体３２と半導体３４を積層させた媒体に、一様帯電、
光像投影で容易に形威できる。In FIG. 1(a), the shaded area is, for example, a high potential area, and the shaded area is the opposite low potential area. As shown in FIG. 1(b), such an electrostatic latent image pattern is created by uniformly charging a medium in which a conductor 32 and a semiconductor 34 are laminated, which is used in a copying machine or the like.
It can be easily visualized by optical image projection.
この静電潜像を持つ補正用試料をＳＥＭの試料台にセッ
トし、電子ビームで走査して、発生した二次電子を二次
電子検出器で捕集し、該検出器の出力をメモリに記憶す
る。The correction sample with this electrostatic latent image is set on the SEM sample stage, scanned with an electron beam, the generated secondary electrons are collected by a secondary electron detector, and the output of the detector is stored in memory. Remember.
その後、ＳＥＭの試料台に観測対象の試料をセットし、
電子ビームで走査して、発生した二次電子を二次電子検
出器で捕集し、該検出器の出力を、上記メモリの読出し
出力で割算して正規化し、その結果を電圧分布像観測に
用いるようにする。After that, set the sample to be observed on the SEM sample stage,
Scanning is performed with an electron beam, the generated secondary electrons are collected by a secondary electron detector, the output of the detector is divided by the readout output of the memory, normalized, and the result is used for voltage distribution image observation. It should be used for
第ｌ図（ａ）の静電潜像を持つ補正用試料を電子ビーム
で走査すると、例えば第１図（ａ）のＡ−Ａ線部分を走
査すると、二次電子検出器の出力は第１図（Ｃ）の如く
なるべきであるが、実際は第１図（ｄ）のようになる。When a correction sample having an electrostatic latent image as shown in Fig. 1(a) is scanned with an electron beam, for example, when scanning the line A-A in Fig. 1(a), the output of the secondary electron detector is It should look like Figure 1(C), but it actually looks like Figure 1(d).
即ち試料の高電圧部分（斜線部）、低電圧部分（白部分
）による検出出力の高、低の他に、該部分の位置による
高、低が加わる。That is, in addition to the high and low detection outputs due to the high voltage portions (hatched portions) and low voltage portions (white portions) of the sample, the high and low values depending on the positions of these portions are added.
位置による高、低は、ＳＥＭの構造、二次電子検出器の
取付位置などによって定まる固有のもので、従って観測
対象の試料を試料台にのせ、電子ビームで走査したとき
も、二次電子検出器出力に入ってくるものである。そこ
で、補正用試料３０を電子ビーム走査したときの二次電
子検出器出力をメモリに記憶しておき、観測用試料を電
子ビーム走査して得られる二次電子検出器出力を該メモ
リの読出し出力で割算すれば、位置による検出出力の変
動は補正され、第１図で言えば（ｄ）を（Ｃ）に修正す
ることが可能になり、これにより試料面の正しい電圧分
布像を得ることができる。The height and low depending on the position are unique and determined by the structure of the SEM, the mounting position of the secondary electron detector, etc. Therefore, even when the sample to be observed is placed on the sample stage and scanned with an electron beam, the secondary electrons cannot be detected. This is what comes into the device output. Therefore, the secondary electron detector output when the correction sample 30 is scanned with an electron beam is stored in a memory, and the secondary electron detector output obtained when the observation sample is scanned with an electron beam is read out from the memory. By dividing by I can do it.
第２図に電圧分布の補正信号を得る手段を、また第３図
に得られた補正信号で補正して忠実度の高い電圧分布像
を得る手段を示す。FIG. 2 shows a means for obtaining a voltage distribution correction signal, and FIG. 3 shows a means for correcting with the obtained correction signal to obtain a voltage distribution image with high fidelity.
先ず第２図で、３０は第１図に示した格子状の静電潜像
パターンを持つ補正用試料である。試料３０の半導体３
４としてはセレン（Ｓｅ）などが一般に用いられ、一様
帯電はコロナ放電によるのが普通である。試料３０に細
く絞った電子ビームＥＢを投射し、偏向器１４により偏
向して試料３０の全面を電子ビームで二次元スキャンす
る。この走査データ（Ｘ，Ｙ偏向データ）はデータ発生
回路２６が発生し、該回路の発生データをＤ／Ａ変換器
２４でアナログ信号に変え、増幅器（ドライバ）２２を
介してＸ，Ｙ偏向器１４に加える。First, in FIG. 2, numeral 30 is a correction sample having the grid-like electrostatic latent image pattern shown in FIG. Semiconductor 3 of sample 30
Selenium (Se) or the like is generally used as the material 4, and uniform charging is normally achieved by corona discharge. A narrowly focused electron beam EB is projected onto the sample 30 and deflected by a deflector 14 to two-dimensionally scan the entire surface of the sample 30 with the electron beam. This scanning data (X, Y deflection data) is generated by a data generation circuit 26, the data generated by the circuit is converted into an analog signal by a D/A converter 24, and then sent to the X, Y deflection data via an amplifier (driver) 22. Add to 14.
電子ビームＥＢが試料３０を照射するとその照射点から
二次電子ＳＥが発生する。発生する二次電子ＳＥは照射
点の電位が高いと少なく、低いと多く、そして電位が高
い部分からの二次電子は低いエネルギを持ち、低い部分
からのそれは高いエネルギのものを含んでおり、この事
はエネルギ分析器を介在させることで可或り高精度な（
誤差１％以下など）電圧測定を可能にする。検出器ＩＯ
はか＼る二次電子ＳＥを捕集し、電圧出力を生しる。こ
の検出器出力は第ｌ図（ｄ）の如きものである。When the sample 30 is irradiated with the electron beam EB, secondary electrons SE are generated from the irradiation point. The generated secondary electrons SE are small when the potential of the irradiation point is high, and large when the potential is low, and secondary electrons from areas with high potential have low energy, and those from low areas include those with high energy. This can be solved with a high degree of accuracy by using an energy analyzer (
Enables voltage measurement (with an error of 1% or less, etc.). Detector IO
It collects the ephemeral secondary electrons SE and generates a voltage output. The output of this detector is as shown in FIG. 1(d).
即ち一様帯電させ、縞模様になるように電荷を抜いたも
のであるから本来は第１図（Ｃ）の出力になるはずであ
るが、試料３０上の各種部材の電位の影響、二次電子検
出器の取付け位置などが原因で検出出力の波形のピーク
、ボＩ・ムが不均一になる。In other words, since it is uniformly charged and the charge is removed to form a striped pattern, the output should originally be as shown in Figure 1 (C), but due to the influence of the potential of various parts on the sample 30, secondary The peak of the waveform of the detection output and the volume may become uneven due to the mounting position of the electronic detector.
増幅器１２はこれを増幅し、Ａ／Ｄ変換器１６はデジタ
ルに変化する。Ａ／Ｄ変換ではザンプリングと、それで
取得した各サンプル（アナログ）のデジタル値への変換
を行なうが、該サンプリングはコントローラ２８からの
信号に従って行なう。The amplifier 12 amplifies this, and the A/D converter 16 converts it to digital. In the A/D conversion, sampling and conversion of each obtained sample (analog) into a digital value are performed, and the sampling is performed according to a signal from the controller 28.
コントローラ２８はデータ発生回路２６が出力する偏向
データを取込み、これは電子ビームＥＢの試料３０上へ
の照射点座標に対応ずるから、これを第１図（ｄ）の位
置データとし、これでＡ／Ｄ変換器１６にサンプリング
させ、そのＡ／Ｄ変換値と該位置データを画像メモリ２
０に書き込み、補正データとする。The controller 28 takes in the deflection data output by the data generation circuit 26, and since this corresponds to the coordinates of the irradiation point of the electron beam EB on the sample 30, it is used as the position data shown in FIG. /D converter 16 to sample, and the A/D converted value and the position data are stored in the image memory 2.
Write it to 0 and use it as correction data.
内挿処理回路１８はＡ／Ｄ変換器１６の出力を内挿処理
して第ｌ図（ｄ）の点線の如くする（包路線を作る）。The interpolation processing circuit 18 performs interpolation processing on the output of the A/D converter 16 to form a dotted line in FIG. 1(d) (creating an envelope line).
即ち、補正データとして必要なのは、格子状電圧分布を
表わす信号或分ではなく、それを高／低に振らせている
変動威分であり、これは第１図（ｄ）の包路線である。That is, what is needed as correction data is not a signal representing the grid-like voltage distribution, but a fluctuation component that causes it to swing high/low, and this is the envelope shown in FIG. 1(d).
なお、Ａ／Ｄ変換器ｌ６でのサンプリングを第ｌ図（ｄ
）の波形の各ピーク点だけで行ない（各ボトム点だけで
行なっても同様であるが）、そのピーク値とピーク点座
標を画像メモリ２０に書き込んで袖正データとする場合
は、内挿処理は必要でない。この場合は、各サンプリン
グ点の間についてはその前／後の補正データを用いる、
メモリから読出した補正データを内挿して使用する、等
となる。格子状電位分布パターンの格子間隔の大／小は
、所要補正精度に合わせて決定する。補正用試料３０の
大きさは、観測用試料例えばＬＳＩチップの大きさに合
わせる、電子ビームの走査範囲に合わせる、等とする。Note that the sampling at the A/D converter l6 is shown in Figure l (d
) for each peak point of the waveform (although it is the same even if it is performed only for each bottom point), and if the peak value and peak point coordinates are written to the image memory 20 and used as sleeve correction data, interpolation processing is performed. is not necessary. In this case, between each sampling point, use the correction data before/after that point.
For example, correction data read from memory is interpolated and used. The size of the lattice spacing of the lattice potential distribution pattern is determined according to the required correction accuracy. The size of the correction sample 30 is set to match the size of the observation sample, for example, an LSI chip, or to match the scanning range of the electron beam.
補正データはＳＥＭに固有のものであるから、一度採取
すればよい。唯、観測対象試料の電圧分布パターンの精
／粗等に合わせて補正用試料の潜像パターンの精／粗を
変え、採取し直してもよい。Since the correction data is unique to the SEM, it only needs to be collected once. However, the fineness/coarseness of the latent image pattern of the correction sample may be changed in accordance with the fineness/coarseness of the voltage distribution pattern of the observation target sample, and the sample may be re-sampled.
第３図ではＳＥＭの試料台には補正用試料３０９
１０
の代りに観測用試料２０を載せ、電子ビームで二次元ス
キャンする。発生した二次電子は検出器１０で捕集し、
増幅器ｌ２で増幅し、Ａ／Ｄ変換器１６でＡ／Ｄ変換し
、一旦画像メモリ４０に書込む。この場合も各サンプル
のデジタル値をその位置データと共に書き込む。次はこ
の画像メモリ４０と補正データを格納している画像メモ
リ２０を読出し、位置データで対応をとりながら、画像
メモリ４０からの各サンプルのデジタル値を画像メモリ
２０からのそれで割算する。回路４２がこの割算をする
回路である。図ではこれはハードウエアイメージを示し
ているが、ソフトウエアでもよい。またメモリ２０．４
０では位置データはメモリアドレスとし、そのメモリア
ドレスにサンプルのデジタル値を書き込んでおくと、上
記位置データでの対応を簡単にとることができる。In FIG. 3, the observation sample 20 is placed on the SEM sample stage instead of the correction sample 309 10 and two-dimensionally scanned with an electron beam. The generated secondary electrons are collected by a detector 10,
The signal is amplified by the amplifier l2, A/D converted by the A/D converter 16, and temporarily written into the image memory 40. Again, the digital value of each sample is written along with its position data. Next, this image memory 40 and the image memory 20 storing the correction data are read out, and the digital value of each sample from the image memory 40 is divided by the digital value of each sample from the image memory 20 while making correspondence with the position data. A circuit 42 is a circuit that performs this division. In the figure, this is a hardware image, but it may also be software. Also memory 20.4
0, the position data is a memory address, and if a sample digital value is written in that memory address, correspondence with the above position data can be easily taken.
割算結果は画像メモリ４４に書込み、これを繰り返し読
出してＣＲＴディスプレイ４６に表示させると、試料２
０の電位分布像が、各種部材の電位による影響などが除
かれた状態で高忠実度で表示される。The division result is written to the image memory 44, and when it is repeatedly read out and displayed on the CRT display 46, the sample 2
A potential distribution image of 0 is displayed with high fidelity with the effects of potentials of various members removed.
観測試料２０はＬＳＩチップでもまた静電潜像を記憶し
ている試料でもよい。静電潜像を記憶している試料には
、Ｘ線顕微鏡試料がある。この試料も第１図（ｂ）のよ
うに導体３２と半盪体３４の積層体で、一様帯電させた
のち、観測対象を通してＸ線照射すると、該観測対象の
構造（Ｘ線透過度分布）を表わす静電潜像が得られる。The observation sample 20 may be an LSI chip or a sample storing an electrostatic latent image. Samples that store electrostatic latent images include X-ray microscope samples. This sample is also a laminate of a conductor 32 and a semi-circular body 34 as shown in Figure 1(b), and after being uniformly charged, when X-rays are irradiated through the observation object, the structure of the observation object (X-ray transmittance distribution ) is obtained.
これを上記のように電子ビームＥＢで走査してディスプ
レイ４６６こ表示すると、観測対象の構造が目視観察で
きる。When this is scanned by the electron beam EB and displayed on the display 466 as described above, the structure to be observed can be visually observed.
得られた電圧分布像はディスプレイに表示するだけでな
く、ハードコピーにする、論理／演算処理する、等に供
することができる。The obtained voltage distribution image can not only be displayed on a display, but also be made into a hard copy, subjected to logical/arithmetic processing, and the like.
以上説明したように本発明によれば、電子ビームによっ
て、ＬＳＩの内部配線や、静電潜像の電圧分布を忠実度
高く観察することができるので、電子ビームによるＬＳ
Ｉ診断や表面の電圧分布測１１
１２
定に非常に有効となる。As explained above, according to the present invention, the internal wiring of an LSI and the voltage distribution of an electrostatic latent image can be observed with high fidelity using an electron beam.
This is very effective for I diagnosis and surface voltage distribution measurements.
第１図は本発明の原理説明図、
第２図および第３図は本発明の実施例を示すブロック図
、
第４図は従来の電圧分布像取得法の説明図である。
第１図で３０は補正用試料、第２図でＥＢは電子ビーム
、ＳＥは二次電子、２０は補正データを格納する画像メ
モリ、第３図で４２は割算回路である。FIG. 1 is an explanatory diagram of the principle of the present invention, FIGS. 2 and 3 are block diagrams showing embodiments of the present invention, and FIG. 4 is an explanatory diagram of a conventional voltage distribution image acquisition method. In FIG. 1, 30 is a sample for correction, in FIG. 2, EB is an electron beam, SE is a secondary electron, 20 is an image memory for storing correction data, and in FIG. 3, 42 is a dividing circuit.
Claims (1)
二次電子を検出器で捕集し、該検出器出力により試料面
の電圧分布像を観測する方法において、 格子状の静電潜像パターンを持つ補正用試料を用い、該
試料を観測対象試料に置き換えて電子ビームで走査し、
得られた二次電子検出器出力をメモリに記憶させ、然る
のち、 観測対象の試料の面を電子ビームで走査し、得られた二
次電子検出器出力を、前記メモリの読出し出力で割算し
て、その結果を電圧分布像観測に用いることを特徴とす
る電子ビーム装置による電圧分布像の観測法。[Claims] 1. A method in which a sample surface is scanned with an electron beam, secondary electrons emitted during the scanning are collected by a detector, and a voltage distribution image on the sample surface is observed from the output of the detector. , using a correction sample with a grid-like electrostatic latent image pattern, replacing the sample with the observation target sample and scanning with an electron beam;
The obtained secondary electron detector output is stored in a memory, and then the surface of the sample to be observed is scanned with an electron beam, and the obtained secondary electron detector output is divided by the readout output of the memory. A method for observing voltage distribution images using an electron beam device, characterized in that the results are calculated and the results are used for observing voltage distribution images.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1166178A JPH0329867A (en) | 1989-06-28 | 1989-06-28 | Observation of voltage distribution image by electron beam apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1166178A JPH0329867A (en) | 1989-06-28 | 1989-06-28 | Observation of voltage distribution image by electron beam apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0329867A true JPH0329867A (en) | 1991-02-07 |
Family
ID=15826525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1166178A Pending JPH0329867A (en) | 1989-06-28 | 1989-06-28 | Observation of voltage distribution image by electron beam apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0329867A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006344436A (en) * | 2005-06-08 | 2006-12-21 | Ricoh Co Ltd | Surface potential distribution measuring method and surface potential distribution measuring device |
| CN102141584A (en) * | 2010-01-29 | 2011-08-03 | 徐启峰 | Digital electronic fluorescent scanning voltage sensor |
| US8143603B2 (en) | 2008-02-28 | 2012-03-27 | Ricoh Company, Ltd. | Electrostatic latent image measuring device |
-
1989
- 1989-06-28 JP JP1166178A patent/JPH0329867A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006344436A (en) * | 2005-06-08 | 2006-12-21 | Ricoh Co Ltd | Surface potential distribution measuring method and surface potential distribution measuring device |
| JP4702880B2 (en) * | 2005-06-08 | 2011-06-15 | 株式会社リコー | Surface potential distribution measuring method and surface potential distribution measuring apparatus |
| US8143603B2 (en) | 2008-02-28 | 2012-03-27 | Ricoh Company, Ltd. | Electrostatic latent image measuring device |
| CN102141584A (en) * | 2010-01-29 | 2011-08-03 | 徐启峰 | Digital electronic fluorescent scanning voltage sensor |
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