JPS60128815A - Method of producing molding type connection unit for power cable - Google Patents
Method of producing molding type connection unit for power cableInfo
- Publication number
- JPS60128815A JPS60128815A JP58235865A JP23586583A JPS60128815A JP S60128815 A JPS60128815 A JP S60128815A JP 58235865 A JP58235865 A JP 58235865A JP 23586583 A JP23586583 A JP 23586583A JP S60128815 A JPS60128815 A JP S60128815A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cross
- linking
- polyethylene
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Electrical Connectors (AREA)
- Processing Of Terminals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の背景と目的〕
本発明は架橋ポリエチレン絶縁ビニルシースミルド式接
続部、に関する。DETAILED DESCRIPTION OF THE INVENTION BACKGROUND AND OBJECTS OF THE INVENTION The present invention relates to crosslinked polyethylene insulated vinyl sheath milled connections.
Ｃ■ケーブルを接続する場合には従来においてはまずケ
ーブル端部を段剥ぎ処理した後に導体接続管で導体を接
続し、しかる後にその上に内部半導電層を設け、更に化
学架橋剤入りのポリエチレンテーゾを巻回して絶縁層を
つくり、この絶縁層を溶融架橋した後に表面を平滑に仕
上げ、その上にテープ状またはチューブ状の外部半導電
層を形成してその接続部を形成している。C ■ When connecting cables, conventionally the ends of the cables are first stripped and then the conductors are connected with a conductor connecting tube, after which an internal semiconductive layer is formed, and then polyethylene containing a chemical crosslinking agent is applied. An insulating layer is created by winding Tezo, and after this insulating layer is melted and cross-linked, the surface is smoothed, and a tape- or tube-shaped external semiconductive layer is formed on top of it to form the connection part. .
この従来の方法においては上記絶縁層と外部半導電層間
の接着が一般に充分でなく、微小な界面欠陥が形成され
て絶縁性能が不安定となる傾向がある。In this conventional method, the adhesion between the insulating layer and the external semiconducting layer is generally insufficient, and minute interfacial defects tend to be formed, resulting in unstable insulation performance.
本発明の目的は上記従来技術に付随する欠点を解消し、
絶縁性能が高くしかも品質の安定化を図ることの出来る
モールド式接続部の製造方法を提供することである。The object of the present invention is to eliminate the drawbacks associated with the above-mentioned prior art,
It is an object of the present invention to provide a method for manufacturing a molded connection part that has high insulation performance and can stabilize quality.
本発明は接続部の化学架橋剤入り絶縁補強層の加熱温度
を絶縁補強材料の溶融温度以上であって架橋温度以下に
設定し、溶融成形した後、ポリオレフィン系外部半導電
層を施こし、しかる後に絶縁補強層材料の架橋温度で上
記外部半導電層と絶縁補強層を一括して溶融架橋するこ
とにより上記目的を達成するものである。In the present invention, the heating temperature of the insulating reinforcing layer containing a chemical crosslinking agent at the connection part is set to be above the melting temperature of the insulating reinforcing material and below the crosslinking temperature, and after melt molding, a polyolefin-based external semiconductive layer is applied. The above object is achieved by subsequently melting and crosslinking the external semiconductive layer and the insulation reinforcing layer together at the crosslinking temperature of the insulation reinforcing layer material.
第１図は本発明の方法により形成されるＣｖケーブル用
モールド式接続部の概略断面図である。FIG. 1 is a schematic cross-sectional view of a molded connection for a Cv cable formed by the method of the present invention.
第１図において、ケーブル端部ｌを図示のごとくに段剥
ぎ処理した後に導体接続管２で導体を接続する。しかる
後に内部半導電層３をその上に設け、更に化学架橋剤入
りのポリエチレンテーゾかもなる絶縁層４を設け、その
上に外部半導電層５を設ける点では従来の方法と同様で
ある。In FIG. 1, the cable end 1 is subjected to step stripping treatment as shown, and then the conductor is connected with the conductor connecting tube 2. As shown in FIG. This method is similar to the conventional method in that an inner semiconducting layer 3 is then provided thereon, an insulating layer 4 made of polyethylene Teso containing a chemical crosslinking agent is further provided, and an outer semiconducting layer 5 is provided thereon.
本発明によれば上記絶縁層４は、ポリエチレンテーゾの
巻回成形後にその溶融温度以上であって架橋温度以下の
温度で比較的短時間加熱し予備モールドを行う。そして
予備モールドの表面を冷却後に平滑に仕上げ、テープ状
またはチューブ状のポリオレフィン系半導電性材料を設
けて外部半導電層５としだ後に再び絶縁層４の架橋温度
で全体を加熱し溶融架橋する。この加熱においては発泡
等による欠陥の発生を防ぐために加圧下でそれを行うと
よい。According to the present invention, the insulating layer 4 is pre-molded by heating the polyethylene Teso at a temperature higher than its melting temperature and lower than its crosslinking temperature for a relatively short period of time after winding. After cooling, the surface of the preliminary mold is smoothed, and a tape or tube-shaped polyolefin semiconductive material is provided to form the external semiconductive layer 5, and then the whole is heated again at the crosslinking temperature of the insulating layer 4 to melt and crosslink it. . This heating is preferably carried out under pressure in order to prevent defects due to foaming or the like.
このようにして形成される本発明のモールＰ式接続部に
おいては絶縁層４と外部半導電層５との界面の接着柱が
著しく改善され界面欠陥が最少となると共に接続部の破
壊性能が著しく向上する。In the Mohr P type joint of the present invention formed in this manner, the adhesive pillars at the interface between the insulating layer 4 and the external semiconducting layer 5 are significantly improved, interface defects are minimized, and the fracture performance of the joint is significantly improved. improves.
第２図は本発明の接続部における絶縁層４と外部半導電
層５の界面の接着強度を従来の接続部におけるそれとも
比較して示すものである。第２図から明らかなように従
来の接続部の界面接着強度は５ ＫＦ？以下であるに対
し、本発明の接続部においては１０Ｋｐ−１５Ｋｐの範
囲となり、その改善の度合は著しい。また第３図はＣ■
ケーブルの接続部における絶縁層と外部半導電層の界面
接着強度と破壊ストレスの関係を示すものであるが、こ
れから明らかなように従来の接続部では交流破壊強度が
約１０ ＫＶ／ｍｍであるに対し、本願のそれは約１５
ＫＶ ／龍を越える値となり、その改善度は著しいもの
がある。FIG. 2 shows the adhesion strength at the interface between the insulating layer 4 and the external semiconducting layer 5 in the connection portion of the present invention in comparison with that in the conventional connection portion. As is clear from Figure 2, the interfacial adhesion strength of the conventional connection is 5 KF? On the other hand, in the connection portion of the present invention, it is in the range of 10Kp to 15Kp, and the degree of improvement is remarkable. Also, Figure 3 shows C■
This shows the relationship between the interfacial adhesion strength and breaking stress between the insulating layer and the external semiconducting layer at the connection part of the cable, and as is clear from this, the AC breakdown strength of the conventional connection part is about 10 KV/mm. On the other hand, that of the present application is about 15
The value exceeds KV/Ryu, and the degree of improvement is remarkable.
前述のように本発明によれば一括架橋の採用により絶縁
層と外部半導電層界面の接着性が大幅に改善され、界面
欠陥を最少にし、それにより接続部の破壊性能が向上出
来る。As described above, according to the present invention, the adhesiveness between the insulating layer and the external semiconducting layer interface is greatly improved by employing bulk crosslinking, thereby minimizing interface defects and thereby improving the fracture performance of the connection portion.
また、絶縁層の予備モールドおよび成形によし界面自体
を極めて滑らかにすることが欠陥を更に少くすることが
出来る。Further, defects can be further reduced by making the interface itself extremely smooth during pre-molding and shaping of the insulating layer.
第１図は本発明により形成される接続部の概略断面図、
第２図は本発明による接続部における絶縁層と外部半導
電層間界面の接着強度を示す図、第３図は接着強度と交
流破壊強度の関係を示す図である。
□１・・・、ＣＶケーブル、２・・・導体接続管、３・
・・内部＝ ５−
半導電層、４・・・絶縁層、５・・・外部半導電層。
６−FIG. 1 is a schematic cross-sectional view of a connecting portion formed according to the present invention;
FIG. 2 is a diagram showing the adhesive strength at the interface between the insulating layer and the external semiconducting layer in the connection part according to the present invention, and FIG. 3 is a diagram showing the relationship between the adhesive strength and the AC breakdown strength. □1...CV cable, 2...conductor connection pipe, 3...
...inner = 5- semiconducting layer, 4... insulating layer, 5... outer semiconducting layer. 6-
Claims (1)
端部を段剥ぎし、導体を導体接続管で接続し、その上に
内部半導電層を設け、更に化学架橋剤入りのポリエチレ
ンテーゾを巻回し、上記架橋付人りのポリ、エチレンテ
ープの溶融温度以上であってその架橋温度以下の温度ま
でそれを加熱して溶融し、冷却後にその表面を平滑に成
形した後、ポリオレフィン系材料からなる半導電性層を
形成し、しかる後に上記架橋割入りのポリエチレン成形
層と上記半導電性層を架橋温度に加熱し一括溶融させて
架橋を行って絶縁層および外部半導電層とすることを特
徴とする架橋ポリエチレン絶縁ビニルシースミカケ−プ
ル用モールＰ式接続部の製造方法。(1) Strip the end of the polyethylene insulated vinyl sheathed cable, connect the conductor with a conductor connection tube, provide an internal semiconductive layer on top of it, wrap it with polyethylene Teso containing a chemical crosslinking agent, and then The cross-linking polyethylene tape is heated to a temperature above the melting temperature and below the cross-linking temperature to melt it, and after cooling, the surface is smoothed and formed into a semiconductive material made of polyolefin material. A cross-linking method characterized by forming a layer, and then heating the cross-linked polyethylene molded layer and the semi-conductive layer to a cross-linking temperature and melting them all together to perform cross-linking to form an insulating layer and an external semi-conductive layer. A method for manufacturing a molded P-type joint for a polyethylene insulated vinyl sheath smear cable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235865A JPS60128815A (en) | 1983-12-13 | 1983-12-13 | Method of producing molding type connection unit for power cable |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235865A JPS60128815A (en) | 1983-12-13 | 1983-12-13 | Method of producing molding type connection unit for power cable |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60128815A true JPS60128815A (en) | 1985-07-09 |
Family
ID=16992391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58235865A Pending JPS60128815A (en) | 1983-12-13 | 1983-12-13 | Method of producing molding type connection unit for power cable |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60128815A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5214779A (en) * | 1975-07-22 | 1977-02-03 | Yoshitomi Pharmaceut Ind Ltd | Novel process for preparing pericyazine |
-
1983
- 1983-12-13 JP JP58235865A patent/JPS60128815A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5214779A (en) * | 1975-07-22 | 1977-02-03 | Yoshitomi Pharmaceut Ind Ltd | Novel process for preparing pericyazine |
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