JPS6011475B2 - CCD photo coupler - Google Patents
CCD photo couplerInfo
- Publication number
- JPS6011475B2 JPS6011475B2 JP51150194A JP15019476A JPS6011475B2 JP S6011475 B2 JPS6011475 B2 JP S6011475B2 JP 51150194 A JP51150194 A JP 51150194A JP 15019476 A JP15019476 A JP 15019476A JP S6011475 B2 JPS6011475 B2 JP S6011475B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- ccd
- light emitting
- photocoupler
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
本発明は単一または複数個の発光ダイオードと電荷転送
装置（Ｃｈａｒ鉾ＣｏｕｐｌｅｄＤｅｖｉｃｅ、以下Ｃ
ＣＤと略記する）とを組み合わせた信号変換機能を有す
るフオトカプラに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a combination of a single or multiple light emitting diodes and a charge transfer device (Charcoupled Device, hereinafter referred to as C).
The present invention relates to a photocoupler having a signal conversion function in combination with a CD (abbreviated as CD).
フオトカプラは発光素子と受光素子とを光学的に結合し
た複合素子であり、フオトカプラは光を情報の伝達、処
理の媒体としているために電気と光の相互変換の機能を
果たしており、情報系の分離を良くするためや、系の電
位を変えるために用いられる。A photocoupler is a composite element that optically couples a light emitting element and a light receiving element.Since the photocoupler uses light as a medium for transmitting and processing information, it functions as a mutual converter between electricity and light, and is used to separate information systems. It is used to improve the electrical potential of the system or to change the potential of the system.
第１図に従釆周知のフオトカプラの構造を示した。Figure 1 shows the structure of a well-known photocoupler.
本図において発光素子１と受光素子２とは互いに対向し
ており、ステム４および５の上にそれぞれ教暦固定され
ている。２個のステム４および５はスべ−サ３を挟んで
一体化されてフオトカブラを構成している。In this figure, a light emitting element 1 and a light receiving element 2 face each other and are fixed on stems 4 and 5, respectively. The two stems 4 and 5 are integrated with a spacer 3 in between to form a photocoupler.
６と７，８と９はそれぞれ前記両素子１および２の外部
引出線である。6 and 7, and 8 and 9 are external lead lines of both the elements 1 and 2, respectively.
第１図には発光、受光素子が一対のフオトカプラを示し
たが、発光、受光素子をそれぞれアレイ状に対向配置し
て一体構成した多素子型フオトカプラも既に知られてい
る。Although FIG. 1 shows a photocoupler with a pair of light-emitting and light-receiving elements, a multi-element type photocoupler in which light-emitting and light-receiving elements are arranged facing each other in an array and is integrally constructed is already known.
しかしながら、このようなフオトカプラを回路や装置に
用いる場合、フオトカプラの入力と出力の関係が１対１
の関係しかないため、例えば出力信号をマイコン等で後
処理するには必ず複雑なインタフェースが必要になると
いう欠点があった。However, when using such a photocoupler in a circuit or device, the relationship between the input and output of the photocoupler is 1:1.
Therefore, there is a drawback that, for example, a complicated interface is always required to post-process the output signal using a microcomputer or the like.
本発明は前述の点に鑑み、ＣＣＤと発光素子とを充分良
好な結合効率を以つて光学的に結合することができ、か
つ信号のパラレルインーシリアルアゥト変換や、この逆
のシリアルインーパラレルァウト変換などができる新規
なるＣＣＤフオトカプラを提供せんとするもので、以下
図面を用いて本発明の実施例につき詳細に説明する。第
２図は本発明に係るフオトカプラの一実施例構造を示し
たもので、１川ま多数のＰＮ接合型発光素子を配列した
アレイ、２５はＣＣＤである。In view of the above-mentioned points, the present invention is capable of optically coupling a CCD and a light emitting element with sufficiently good coupling efficiency, and is capable of converting signals from parallel in to serial out, and vice versa. The purpose is to provide a novel CCD photocoupler capable of conversion, etc., and embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 2 shows the structure of an embodiment of the photocoupler according to the present invention, in which an array having a large number of PN junction type light emitting elements arranged, 25 is a CCD.
０発光素子アレイ１０の配列ピッチとＣＣＤ２５の感光
部のピッチとは一致せしめられている。The arrangement pitch of the 0 light emitting element array 10 and the pitch of the photosensitive portions of the CCD 25 are made to match.
ＣＣＤ２５の構成材料はシリコン（Ｓｉ）であるのに対
し、発光素子アレイ１０はガリウム硯素燐（Ｇａ船Ｐ）
を材料としている。この理由は発光素５子の発光スペク
トルがＣＣＤの分光感度特性の感度極大点付近にあるよ
うにするためで、このようにすると良好な量子効率が得
られ、従って電流結合効率も良好になる。なお発光素子
アレイ１０はＮ型のＧａＡｓＰから成る基板１ １に、
所定ピッチすなわちＣＣＤ２５の感光部の配列と同一ピ
ッチを以ってアクセブタ不純物たとえば亜鉛（Ｚｎ）の
島状拡散層１２を形成したものである。該拡散層とＮ型
基板との間のＰＮ接合に順方向電流を流すことによって
発光する。１５は発光素子に対する給電用電極で、絶縁
被膜１４上に延長して形成されている。The constituent material of the CCD 25 is silicon (Si), whereas the light emitting element array 10 is made of gallium phosphorus (Ga ship P).
The material is The reason for this is to ensure that the emission spectrum of the five light-emitting elements is near the maximum sensitivity point of the spectral sensitivity characteristics of the CCD, and by doing so, a good quantum efficiency can be obtained, and therefore a good current coupling efficiency can be obtained. Note that the light emitting element array 10 includes a substrate 11 made of N-type GaAsP,
Island-shaped diffusion layers 12 of an acceptor impurity such as zinc (Zn) are formed at a predetermined pitch, that is, at the same pitch as the arrangement of the photosensitive parts of the CCD 25. Light is emitted by passing a forward current through the PN junction between the diffusion layer and the N-type substrate. Reference numeral 15 denotes a power supply electrode for the light emitting element, which is formed to extend on the insulating coating 14 .
この電極１５から発光素子に流す電流を信号で変調する
ことにより変調光が得られる。一方、受光側となるＣＣ
Ｄ２５は、本実施例ではＳｉを基板材料とし、基板表面
には２層の多結晶Ｓｉから成るゲート電極１９および２
１がゲート酸化膜２２上に形成されたものである。Modulated light can be obtained by modulating the current flowing from this electrode 15 to the light emitting element with a signal. On the other hand, the CC on the light receiving side
In this embodiment, D25 uses Si as the substrate material, and gate electrodes 19 and 2 made of two layers of polycrystalline Si are formed on the surface of the substrate.
1 is formed on the gate oxide film 22.
２川ま両電極１ ９，２ １を絶縁するためのＳｉ０２
被膜である。Si02 for insulating both electrodes 1 9, 2 1
It is a film.
さらにＣＣＤ２５に対し、電極上に二酸化シリコン（Ｓ
ｉ０２）薄膜１８が被着され、該Ｓｉ０２薄膜上に遮光
の目的でアルミニウムの蒸着膜１７が形成されている。
また２６は黒色吸収膜で、とくに発光素子の材料が燐化
ガリウムの場合には発光が周囲に拡がり易いからぜひ必
要である。アルミニウム（ＡＩ）黍着膜１７は、ＣＣＤ
の受光部２３上の部分だけが除去されて受光窓１６とな
っている。Furthermore, for the CCD 25, silicon dioxide (S) is placed on the electrode.
i02) A thin film 18 is deposited, and an aluminum vapor deposited film 17 is formed on the Si02 thin film for the purpose of shielding light.
Further, 26 is a black absorption film, which is especially necessary when the material of the light emitting element is gallium phosphide because the light emission tends to spread to the surroundings. The aluminum (AI) coating film 17 is a CCD
Only the portion above the light receiving portion 23 is removed to form the light receiving window 16.
この受光窓１６を形成するには従来周知のフオトェツチ
ング法によればよい。またＳｉ０２薄膜１ ８は化学蒸
着法（ＣｈｅｍｉｃａｌＶａｐｏｒＤｅｐｏｓｉｔｉｏ
ｎ）によって形成すればよく、厚さは約１一肌とする。
なお点線２４は基板内に生じた電位の井戸の緑を示す。
さて図に示したフオトカプラを製造するには、ＣＣＤと
発光素子アレイとを別々に作り、次いで両者を貼り合わ
せて一体化する。そのために、第３図に示すようにＣＣ
Ｄ２５上にボンディングパッド３０を、また発光素子ア
レィー川こはボンディングパッド３１をそれぞれ形成し
ておく。これらのパッドの材料としては低融点の合金た
とえば金一シリコン（Ａｕ−Ｓｉ）合金、金一錫（Ａｕ
一Ｓｎ）合金などを用いる。そして発光素子アレイ１０
と、ＣＣＤ２５とを以前に第１図に示したように精密に
位置合わせをして貼り合わせるのであるが、このために
片側の素子上に位置合わせ用のマーク３２，３３，３４
，３５を形成しておき、このマークに他方の素子の角を
一致させた状態で加熱して両者のボンディングパッドを
融着させて一体化する。一体化したフオトカプラ主体を
ケースに封入し、リード線接続等を行なえば完成した製
品となる。このような構成のＣＣＤフオトカプラはＣＣ
Ｄの自己走査機能により信号をパラレルィンーシリアル
ァゥト変換することができる。The light-receiving window 16 may be formed by a conventionally well-known photoetching method. In addition, the Si02 thin film 18 was formed using a chemical vapor deposition method (Chemical Vapor Deposition method).
n), and the thickness should be approximately 1-10 mm.
Note that the dotted line 24 indicates the green potential well generated within the substrate.
To manufacture the photocoupler shown in the figure, a CCD and a light emitting element array are made separately, and then they are bonded together to integrate them. For this purpose, as shown in Figure 3, CC
A bonding pad 30 is formed on D25, and a bonding pad 31 is formed on the light emitting element array. The materials for these pads include low melting point alloys such as gold-silicon (Au-Si) alloys, gold-tin (Au-Si) alloys, and gold-tin (Au-Si) alloys.
-Sn) alloy etc. is used. And light emitting element array 10
and CCD 25 are precisely aligned and bonded together as previously shown in FIG.
, 35 are formed in advance, and with the corners of the other element aligned with these marks, heating is performed to fuse and integrate the bonding pads of both elements. The integrated photocoupler body is enclosed in a case and the lead wires are connected to create a completed product. A CCD photocoupler with such a configuration is CC
The D's self-scanning function allows signals to be converted from parallel to serial.
以上説明した実施例では、発光素子は多数の単位素子か
ら成るアレイであったが、単一発光素子をＣＣＤに結合
する場合には一般にＣＣＤの方がはるかに大面積である
ので、ＣＣＤ上で発光素子チップを動かして位置決めし
た後固着すればよい。In the embodiments described above, the light emitting element was an array consisting of a large number of unit elements, but when a single light emitting element is coupled to a CCD, since the area of the CCD is generally much larger, The light emitting element chip may be moved and positioned and then fixed.
このように単一の発光素子のＣＣＤの入力側の受光素子
に対向させるとともに、ＣＣＤの各ビット対応に出力部
を設ければ、シリアルインーパラレルァゥトの信号変換
が可能となる。以上、詳細に説明したように、本発明の
ＣＣＤフオトカプラは信号のパラレルインーシリアルア
ゥト変換またはシリアルインーパラレルァゥト変換など
ができるので、この後の信号処理が容易となり、従来の
ような複雑なインタフェースを必要としないという実用
的な効果を有している。In this way, by arranging a single light emitting element to face the light receiving element on the input side of the CCD and providing an output section corresponding to each bit of the CCD, serial-to-parallel signal conversion becomes possible. As explained above in detail, the CCD photocoupler of the present invention is capable of converting signals from parallel in to serial out or serial in to parallel out, which simplifies subsequent signal processing and eliminates the need for complicated interfaces as in the past. It has the practical effect that it is not necessary.
第１図は従来の単一素子のフオトカプラの構造を示す断
面図、第２図は本発明に係るフオトカプラの一実施例に
おける発光ダイオードアレイと受光ＣＣＤの相対位置並
びに構造を説明するための断面図、第３図は発光ダイオ
ードアレイと受光ＣＣＤとを一体化する前の状態を説明
する斜視図である。
１：発光ダイオード、２：受光ダイオード、３：スベー
サ、４，５：ステム、６，７，８，９：リード線、１０
：発光ダイオードアレイ、１１：ＧａＡｓＰ等のＮ型発
光ダイオード基板、１２：Ｐ型拡散層、１３：発光ダイ
オード出力窓、１４：絶縁膜、１５：発光ダイオード電
極リード線（入力信号端子）、１６：ＣＣＤ受光窓、１
７：遮光膜、１８：絶縁膜（ＣＶＤによるＳｉ０２）、
１９，２１：ＣＣＤゲート電極（ポリシリコンゲート電
極）、２０：絶縁膜（Ｓｉ０２）、２２：ゲート酸化膜
（Ｓｊ０２）、２３：ＣＣＤ受光窓、２４：ＣＣＤ空乏
層、２５：受光用ＣＣＤ、２６：黒色光吸収膜、３０，
３１：ボンディングパッド、３２，３３，３４，３５：
発光ダイオードアレイと受光ＣＣＤの位置合わせマーク
。
え了函
亥Ｚ図
次Ｊ囚FIG. 1 is a sectional view showing the structure of a conventional single-element photocoupler, and FIG. 2 is a sectional view illustrating the relative positions and structure of a light emitting diode array and a light receiving CCD in an embodiment of the photocoupler according to the present invention. , FIG. 3 is a perspective view illustrating a state before the light emitting diode array and the light receiving CCD are integrated. 1: Light emitting diode, 2: Light receiving diode, 3: Surface, 4, 5: Stem, 6, 7, 8, 9: Lead wire, 10
: Light emitting diode array, 11: N type light emitting diode substrate such as GaAsP, 12: P type diffusion layer, 13: Light emitting diode output window, 14: Insulating film, 15: Light emitting diode electrode lead wire (input signal terminal), 16: CCD light receiving window, 1
7: Light shielding film, 18: Insulating film (Si02 by CVD),
19, 21: CCD gate electrode (polysilicon gate electrode), 20: Insulating film (Si02), 22: Gate oxide film (Sj02), 23: CCD light receiving window, 24: CCD depletion layer, 25: CCD for light receiving, 26 : black light absorption film, 30,
31: Bonding pad, 32, 33, 34, 35:
Alignment mark for light emitting diode array and light receiving CCD. Eryokankai Z Zuji J Prisoner
Claims (1)
有するＣＣＤの上記主表面において受光部以外の部分に
遮光膜を被着形成し、該構成体上に透明な絶縁物被膜を
介して発光素子を密接して配置し、発光素子の発光部位
とＣＣＤの受光部とを正対せしめ、上記発光素子の発光
に対応して上記受光素子に発生する電荷を上記電荷転送
部により転送した後信号として取り出すようにしたこと
を特徴とするＣＣＤフオトカプラ。1. A light-shielding film is formed on the main surface of a CCD having a light-receiving part and a charge transfer part on one main surface of a semiconductor substrate in a part other than the light-receiving part, and a transparent insulating film is placed on the structure. The light-emitting elements are arranged closely together, the light-emitting part of the light-emitting element and the light-receiving part of the CCD are directly opposed, and the charge generated in the light-receiving element in response to the light emission of the light-emitting element is transferred by the charge transfer part. A CCD photocoupler characterized in that it is extracted as a rear signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51150194A JPS6011475B2 (en) | 1976-12-13 | 1976-12-13 | CCD photo coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51150194A JPS6011475B2 (en) | 1976-12-13 | 1976-12-13 | CCD photo coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5373986A JPS5373986A (en) | 1978-06-30 |
| JPS6011475B2 true JPS6011475B2 (en) | 1985-03-26 |
Family
ID=15491561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51150194A Expired JPS6011475B2 (en) | 1976-12-13 | 1976-12-13 | CCD photo coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6011475B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313399A (en) * | 1986-07-04 | 1988-01-20 | 日本建鐵株式会社 | Manufacture of control unit of washer and the like |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840973U (en) * | 1981-09-12 | 1983-03-17 | 株式会社リコー | manual reader |
| JPS5898962A (en) * | 1981-12-08 | 1983-06-13 | Fujitsu Ltd | Photosemiconductor device |
-
1976
- 1976-12-13 JP JP51150194A patent/JPS6011475B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313399A (en) * | 1986-07-04 | 1988-01-20 | 日本建鐵株式会社 | Manufacture of control unit of washer and the like |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5373986A (en) | 1978-06-30 |
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