JPS60106215A - High-frequency amplifier - Google Patents
High-frequency amplifierInfo
- Publication number
- JPS60106215A JPS60106215A JP21327083A JP21327083A JPS60106215A JP S60106215 A JPS60106215 A JP S60106215A JP 21327083 A JP21327083 A JP 21327083A JP 21327083 A JP21327083 A JP 21327083A JP S60106215 A JPS60106215 A JP S60106215A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- circuit
- transmission line
- frequency amplifier
- wavelength transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
１（技術分野）
この発明は高周波増幅器に関し、特に小形化に適したも
のである。DETAILED DESCRIPTION OF THE INVENTION 1 (Technical Field) The present invention relates to a high frequency amplifier, and is particularly suitable for miniaturization.
（技術的背景）
従来、高周波増幅器の小形化をはかるに際して、回路を
構成する基板として、より高い誘電率の基板を使用する
傾向があった。(Technical Background) Conventionally, in an attempt to downsize high-frequency amplifiers, there has been a tendency to use a substrate with a higher dielectric constant as a circuit-constituting substrate.
しかしながら、回路が一板基板で構成されている場合、
全体が一律に短縮され、不必要な個所まで縮少される可
能性があシ、場合によっては製作が困難となる欠点があ
った。However, if the circuit is composed of a single board,
There was a drawback that the entire structure was uniformly shortened, there was a possibility that unnecessary parts were reduced, and in some cases it was difficult to manufacture.
（発明の目的）
この発明の目的は、従来技術の上記問題点を解決するた
め、分布定数回路の部分を他の高誘電率基板に形成して
回路全体の小形化をバランスよく実現することにある。(Objective of the Invention) The object of the present invention is to form the distributed constant circuit part on another high dielectric constant substrate in order to solve the above-mentioned problems of the prior art, thereby achieving a well-balanced miniaturization of the entire circuit. be.
（発明の構成）
この発明は、分布定数回路を有し基板上に形成した高周
波増幅器において、前記分布定数回路の部分を当該分布
定数回路部分以外の基板より高い誘電率の誘電体で形成
したことを特徴とする高周波増幅器である。このように
することによシ、例えば高周波電力増幅器の出力回路と
して、ｈ波長伝送線路が設けられている場合、この線路
は周波数ＩＧＨ２でし波長伝送線路長−７５胴になるが
、この増幅器の小形化を実現するため、へ波長伝送線路
の部分について、高誘電率の基板で形成し、線路長の短
縮をはかることができる。(Structure of the Invention) The present invention provides a high frequency amplifier having a distributed constant circuit and formed on a substrate, in which a portion of the distributed constant circuit is formed of a dielectric material having a higher dielectric constant than the substrate other than the portion of the distributed constant circuit. This is a high frequency amplifier characterized by: By doing this, for example, if an h-wavelength transmission line is provided as an output circuit of a high-frequency power amplifier, this line will have a wavelength transmission line length of -75 at the frequency IGH2. In order to achieve miniaturization, the wavelength transmission line portion can be formed from a substrate with a high dielectric constant to shorten the line length.
（実施例）
第１図は、この発明の実施例を示す基本回路図であって
、１は誘電率ε１で形成した第１の基板、２は誘電率ε
２（ε２〉ε１ ）で形成した第２の基板である。３は
ｌ波長伝送線路（ストリップライン）であシ、高誘電率
ε２の第２の基板２に形成されている。４，５は務波長
伝送線路（ス） ＩＪノデライン）３の一端及び他端、
６は例えば砒素ＨＩＪウム電界効果トランジスタ（Ｇａ
ＡｓＦＥＴ）、７は並列共振回路、８は出力端子である
。(Example) FIG. 1 is a basic circuit diagram showing an example of the present invention, in which 1 is a first substrate formed with a dielectric constant ε1, and 2 is a first substrate formed with a dielectric constant ε1.
2 (ε2>ε1). Reference numeral 3 denotes an l-wavelength transmission line (strip line), which is formed on the second substrate 2 having a high dielectric constant ε2. 4 and 5 are one end and the other end of the operating wavelength transmission line (IJ node line) 3,
6 is, for example, an arsenic HIJium field effect transistor (Ga
AsFET), 7 is a parallel resonant circuit, and 8 is an output terminal.
届波長伝送線路（ストリップライン）３の一端４は電界
効果トランジスタ６のドレインＤに接続し、気液長伝送
線路（ストリップライン）３の低乾；は並列共振回路７
の一端を接続するとともに出力端子８に接続する。One end 4 of the wavelength transmission line (stripline) 3 is connected to the drain D of the field effect transistor 6, and the low dryness of the vapor-liquid length transmission line (stripline) 3 is connected to the parallel resonant circuit 7.
and the output terminal 8.
第２図は第１の基板１と第２の基板２との位置状態を示
す断面図である。第２図（ａ）はｌ波長伝送線路（スト
リップライン）３を形成した第２の基板２を第１の基板
１の面上に密着固定した状態である。第２図（ｂ）は第
１の基板１に第２の基板２が嵌合する凹状の穴９を形成
し、当該穴９に第２の基板２を挿入固定した状態である
。第２図（Ｃ）は第１の基板１に第２の基板２が嵌合す
る孔１０を形成し、尚該孔１０に第２の基板２を挿入固
定した状態である。FIG. 2 is a sectional view showing the positional state of the first substrate 1 and the second substrate 2. As shown in FIG. FIG. 2(a) shows a state in which the second substrate 2 on which the l-wavelength transmission line (stripline) 3 is formed is closely fixed on the surface of the first substrate 1. FIG. 2(b) shows a state in which a concave hole 9 into which the second substrate 2 fits is formed in the first substrate 1, and the second substrate 2 is inserted and fixed into the hole 9. FIG. 2C shows a state in which a hole 10 into which the second substrate 2 fits is formed in the first substrate 1, and the second substrate 2 is inserted and fixed into the hole 10.
占波長伝送路（ストリップライン）３と電界効果トラン
ジスタ６及び並列共振回路７．出力端子８との接続は、
第１の基板１に第２の基板２との境まで形成した回路パ
ターンとｌ波長伝送線路（ストリップライン）３の端部
４，５とをワイヤボンディング又は半田付で接続する。Wavelength transmission line (stripline) 3, field effect transistor 6, and parallel resonant circuit 7. Connection with output terminal 8 is as follows:
The circuit pattern formed on the first substrate 1 up to the boundary with the second substrate 2 and the ends 4 and 5 of the l-wavelength transmission line (stripline) 3 are connected by wire bonding or soldering.
実施例において、例えば、第２の基板２として、ε２−
４ε１なる誘電率の基板を使用したとすれば、ｌ波長伝
送線路（ストリップライン）３の短縮率はＶｆに比例す
るから、第１の基板１に比して第２の基板２上のストリ
ップラインは板１の実装スペースを小さくすることがで
きるので、全体として小形化がはかれることになる。In the embodiment, for example, as the second substrate 2, ε2-
If a substrate with a dielectric constant of 4ε1 is used, the shortening rate of the l-wavelength transmission line (stripline) 3 is proportional to Vf, so the stripline on the second substrate 2 is smaller than that on the first substrate 1. Since the mounting space of the board 1 can be reduced, the overall size can be reduced.
また、実施例は％波長伝送線路（ストリップライン）に
ついて説明しているが、一般の分布定数回路を有する高
周波増幅器についても同様に実現できることは容易に理
解することができる。Further, although the embodiment describes a % wavelength transmission line (strip line), it is easy to understand that a high frequency amplifier having a general distributed constant circuit can be similarly realized.
（発明の効果）
この発明は、以上説明したように、分布定数回路を高誘
電率の誘電体に形成しであるので、全体としてバランス
よく小形化が実現できるという利点がある。(Effects of the Invention) As explained above, the present invention has the advantage that the distributed constant circuit is formed in a dielectric material with a high dielectric constant, and therefore the overall size can be reduced in a well-balanced manner.
第１図は本発明の一実施例を説明する基本回路図、第２
図は第１の基板と第２の基板の位置状態を示す断面図で
ある。
１・・基板、２・・・高誘電率の基板、３・・・ｌ波長
伝送線路、４，５・・・４波長伝送線路の端、６・・・
電界効果トランジスタ、７・・・並列共振回路、８・・
・出力端子、９・・・穴、１０・・・孔。
第１図
■−−−−ｊ
第２図
ｌ 事件の表示
昭和５８年 特 許 願第２１３２７０号２、発明の名
称
冒周波増幅器
５、補正の対象、明細書中「発明の詳細な説明」の欄及
び図面「第１図」
６ 補正の内容 別紙のとおり
６補正の内容
（１） 明細書第３頁第１４行目から第１５行目に「３
の他端は」とあるのを「３の他端５は」と補正する。
（２） 同書第４頁第７行目に「１／４波長伝送路」と
あるのｉ ｒ １／４波長伝送線路」と補正する。
（３）図面「第１図」を別紙のとおシ補正する。Fig. 1 is a basic circuit diagram explaining one embodiment of the present invention;
The figure is a sectional view showing the positional state of the first substrate and the second substrate. 1... Substrate, 2... High dielectric constant substrate, 3... 1 wavelength transmission line, 4, 5... End of 4 wavelength transmission line, 6...
Field effect transistor, 7... Parallel resonant circuit, 8...
・Output terminal, 9...hole, 10...hole. Figure 1 ■----j Figure 2 l Indication of the incident 1982 Patent Application No. 213270 2, title of the invention Infringement Frequency Amplifier 5, subject of amendment, ``Detailed Description of the Invention'' in the specification Column and drawing “Figure 1” 6. Contents of amendment As shown in the attached sheet, 6. Amendment contents (1) “3
``The other end of 3'' is corrected to ``The other end of 3 is 5.'' (2) In the 7th line of page 4 of the same book, the phrase ``1/4 wavelength transmission line'' is corrected to read ``1/4 wavelength transmission line''. (3) Revise the drawing “Figure 1” as attached.
Claims (2)
器において、前記分布定数回路の部分を当該分布定数回
路部分以外の基板の誘電率よシ高い誘電率の誘電体で形
成したことを特徴とする高周波増幅器。(1) A high frequency amplifier having a distributed constant circuit formed on a substrate element, characterized in that the distributed constant circuit portion is formed of a dielectric material having a higher dielectric constant than the dielectric constant of the substrate other than the distributed constant circuit portion. High frequency amplifier.
徴とする特許請求の範囲第１項記載の高周波増幅器。(2) The high frequency amplifier according to claim 1, wherein the distributed constant circuit is a strong wavelength transmission line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21327083A JPS60106215A (en) | 1983-11-15 | 1983-11-15 | High-frequency amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21327083A JPS60106215A (en) | 1983-11-15 | 1983-11-15 | High-frequency amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60106215A true JPS60106215A (en) | 1985-06-11 |
Family
ID=16636318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21327083A Pending JPS60106215A (en) | 1983-11-15 | 1983-11-15 | High-frequency amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60106215A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529851A (en) * | 1991-07-19 | 1993-02-05 | Hitachi Ltd | High frequency and high effeciency power amplifier |
| WO2005093948A1 (en) * | 2004-03-26 | 2005-10-06 | Hitachi Kokusai Electric Inc. | Amplifier |
| JP2005303771A (en) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | High frequency power amplifier |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522354U (en) * | 1975-06-23 | 1977-01-08 |
-
1983
- 1983-11-15 JP JP21327083A patent/JPS60106215A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522354U (en) * | 1975-06-23 | 1977-01-08 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529851A (en) * | 1991-07-19 | 1993-02-05 | Hitachi Ltd | High frequency and high effeciency power amplifier |
| WO2005093948A1 (en) * | 2004-03-26 | 2005-10-06 | Hitachi Kokusai Electric Inc. | Amplifier |
| JP2005303771A (en) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | High frequency power amplifier |
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